JP2009057604A - Film-forming apparatus, film-forming system, and cleaning method of film-forming apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film-forming apparatus capable of cleaning impurities adhered to the inside of a chamber with good efficiency. <P>SOLUTION: The film-forming apparatus is provided with a chamber 30 for forming film, gas supply means 42 and 44 for supplying a cleaning gas containing halogens into the chamber 30, pressure adjusting means 52 and 54 for adjusting the pressure of the cleaning gas in the chamber 30, plasma generating means 32, 34 and 36 for making the cleaning gas a plasma; and when cleaning an unnecessary matter adhered to the inner wall of the chamber 30 by the action of the cleaning gas generated by using the plasma generating means 32, 34 and 36, the pressure of the cleaning gas in the chamber 30 is made changeable by the pressure adjusting means 52 and 54. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a film forming apparatus, a film forming system, and a film forming apparatus cleaning method capable of cleaning to remove unnecessary materials attached to a chamber when a thin film is formed on a semiconductor substrate or the like.

  Conventionally, when a metal film, for example, a copper thin film is prepared by vapor deposition, a liquid organometallic complex such as copper, hexafluoroacetylacetonate, and trimethylvinylsilane is used as a raw material, and the solid raw material is dissolved in a solvent. The film formation on the substrate is realized by vaporizing using a thermal reaction.

  In addition, chlorine gas is supplied into a chamber in which the substrate is installed, and the chlorine gas is converted into plasma by a plasma generating means, and an etching target member containing copper disposed in the chamber is etched with chlorine gas plasma and etched. A method of forming a copper thin film by depositing etched copper on a substrate by appropriately controlling the temperature relationship between the member and the substrate is also disclosed (Patent Documents 1 to 4, etc.).

  In such a film forming apparatus for forming a metal film, an unnecessary metal film adheres not only to the surface of the substrate but also to the inner wall of the chamber during film formation. Therefore, the film forming chamber is opened to the atmosphere, and chemicals etc. are used to wipe off unnecessary materials adhering to the inner wall of the chamber, or to replace the inner wall protection board installed inside the chamber. Yes.

  In addition, a cleaning method may be used in which a cleaning gas containing a halogen such as chlorine is turned into plasma to remove unnecessary materials in the chamber by etching (Patent Documents 1 to 4, etc.).

JP 2003-155568 A JP 2002-327273 A JP 2004-043943 A JP 2004-076123 A

  However, in the above prior art, it is necessary to open the film forming chamber to the atmosphere in order to wipe off or replace the inner wall protection board, and there is a problem that it takes time and labor for the work. In addition, there is a problem in that the state in the chamber changes due to the release of the atmosphere, and the film quality, yield, and the like of the film formed when the film is formed again after the release of the atmosphere are reduced.

  In addition, when etching unnecessary substances adhering to the inner wall of the chamber or the installed objects in the chamber by turning the cleaning gas into plasma, it is not necessary to release the atmosphere, but the above problem can be avoided, but radicals are uniformly supplied from the plasma into the chamber. Need to be cleaned. Therefore, an antenna for generating plasma is provided around the entire chamber periphery, or a mechanism for moving the antenna is provided. However, there are problems such as a complicated apparatus configuration and an increased manufacturing cost of the film forming apparatus.

  An object of the present invention is to provide a film forming apparatus, a film forming system, and a method for cleaning a film forming apparatus that can solve at least one of the above-described problems.

  The present invention includes a chamber for forming a film, a gas supply means for supplying a cleaning gas containing halogen into the chamber, a pressure adjusting means for adjusting the pressure of the cleaning gas in the chamber, and the cleaning gas. A plasma generating means for converting into plasma, and when cleaning unnecessary substances attached to the inner wall of the chamber by the action of plasma of the cleaning gas generated using the plasma generating means, The pressure of the cleaning gas in the chamber can be changed by the pressure adjusting means.

  At this time, it is presumed that halogen radicals are supplied from the cleaning gas plasma to the unwanted matter attached in the chamber, and the unwanted matter is removed by the action of the radicals.

  By changing the pressure of the cleaning gas during the cleaning of the chamber using the pressure adjusting means, the generation region of the cleaning gas plasma in the chamber can be changed, and the entire inside of the chamber is efficiently cleaned. It becomes possible.

  In particular, it is preferable that the pressure adjusting means sets the cleaning gas in the chamber to a first pressure at the initial stage of cleaning, and then lowers the cleaning gas in the chamber below the first pressure. is there. As a result, cleaning gas plasma is generated in the vicinity of the plasma antenna generally disposed upstream of the gas supply to clean the unnecessary objects in the vicinity thereof, and then the vicinity of the exhaust port disposed downstream of the gas supply Unnecessary substances can be cleaned while moving the region where the cleaning gas plasma is generated, and the unnecessary substances in the chamber can be efficiently cleaned.

  The cleaning gas is preferably a halogen-containing gas diluted with a rare gas. By diluting the cleaning gas containing halogen (fluorine, chlorine, etc.) with a rare gas (helium, neon, argon, etc.), it is possible to more efficiently remove unnecessary substances in the chamber. This is presumed to be due to the sputtering effect of unnecessary substances caused by rare gases.

  In addition, it is preferable that a gas flow rate adjusting means for adjusting a flow rate of the cleaning gas supplied into the chamber is provided. By providing the gas flow rate adjusting means, the flow rate of the cleaning gas supplied into the chamber can be controlled, the refresh time at which the cleaning gas in the chamber is replaced can be changed, and unnecessary substances can be removed. Refresh time suitable for

  In addition, it is preferable that a temperature gradient can be provided in the chamber in the temperature range from room temperature to 200 ° C. during cleaning. For example, a temperature gradient can be provided by locally arranging a plasma antenna included in the plasma generating means and generating a cleaning gas plasma locally in the chamber. In addition, for example, heaters capable of independently controlling the temperature can be installed at various locations in the chamber, and a temperature gradient can be provided in the chamber.

  The cleaning gas preferably contains halogen at a concentration of 5% or more. The cleaning gas preferably contains halogen at a concentration of 50% or less, and more preferably contains halogen at a concentration of 30% or less. By setting this concentration range, it becomes possible to supply an appropriate amount of radicals from the plasma of the cleaning gas, and cleaning can be performed more effectively.

  The gas supply means preferably includes a heating means for heating the cleaning gas before introducing the cleaning gas into the chamber. By increasing the temperature of the cleaning gas before introducing it into the chamber, the energy applied in the chamber can be reduced. Thereby, the cleaning efficiency can be increased.

  In the film forming apparatus according to the present invention, in the film formation, plasma is generated in the chamber to etch a target installed in the chamber, and a reactant generated by the etching is supplied to the substrate surface. In this case, it can be provided in a film forming system provided with a target transfer means for carrying the target in and out of the chamber.

  According to the present invention, it is possible to efficiently remove unnecessary substances attached to the chamber of the film forming apparatus.

  As shown in FIG. 1, the semiconductor manufacturing apparatus 100 according to the embodiment of the present invention includes a cassette container 10, a transfer chamber 12, a transfer mechanism 14, a rotary stage 16, a load chamber 18, a common transfer chamber 20, a transfer mechanism 22, and a component. The film processing module 24 is included. The semiconductor manufacturing apparatus 100 is used, for example, when forming damascene wiring on a silicon substrate that is a semiconductor substrate.

  A substrate serving as a workpiece is stored in a cassette container 10 having a sealed structure. For example, 25 substrates are stored in the cassette container 10. Each of the cassette containers 10 is set on a cassette table adjacent to the transfer chamber 12.

  The transfer chamber 12 is spatially shielded from the outside air. A transfer mechanism 14 is provided in the transfer chamber 12. The transport mechanism 14 takes out the substrates one by one from the cassette container 10 and transports the substrates in the longitudinal direction in the transport chamber 12. The substrate taken out from the cassette container 10 by the transport mechanism 14 is set on a rotary stage 16 provided in the transport chamber 12 and adjusted so as to have a rotation position suitable for the subsequent processing. It is carried into the load chamber 18.

  The substrate carried into the load chamber 18 is transferred to the film forming process module 24 by a transfer mechanism 22 having an articulated robot arm provided in the common transfer chamber 20. At the communicating portion between the transfer chamber 12 and the load chamber 18, and between the load chamber 18 and the common transfer chamber 20, a gate valve capable of airtightly blocking between the two chambers communicating with each other is provided. In addition, a gate valve is provided at a communication portion between the film forming module 24 and the common transfer chamber 20. The gate valve is used so that the degree of vacuum in each chamber does not deteriorate when the substrate is transported.

  Alternatively, the target (material to be etched) may be transferred into and out of the film forming module 24 using the transfer mechanism 22. That is, a gate valve for transporting the target is provided in the communication portion between the film forming module 24 and the common transport chamber 20, and cleaning is performed in a state where the target is retracted by the transport mechanism 22 when performing a cleaning process described later. Make it possible to do. In addition, the automatic conveyance technique between various process modules is well-known by Unexamined-Japanese-Patent No. 2006-165174 etc., for example.

  As shown in the conceptual diagram of the apparatus configuration of FIG. , A cleaning gas nozzle 44, a target support 46, a substrate support 48, an exhaust port 50, an automatic pressure regulator 52, an exhaust pump 54, a sheath heater 56, and a gas heating unit 58.

  A copper plate target 46a is installed on the target support 46 in the chamber 30 as the material to be etched. Using the transport mechanism 22, the target 46 a can be installed on the target support 46 in the chamber 30, and the target 46 a can be retracted from the target support 46 to the common transport chamber 20. In addition, a substrate 48 a to be deposited is placed on the substrate support 48 in the chamber 30. The substrate 48a is carried into and installed on the substrate support 48 in the chamber 30 using the transport mechanism 22 as described above.

  After the target 46 a and the substrate 48 a are installed, the inside of the chamber 30 is evacuated to a vacuum by an exhaust pump 54 connected to the exhaust port 50. After evacuating the inside of the chamber 30, the source gas is introduced into the chamber 30. The flow rate of the source gas is adjusted by the source gas flow rate controller 38 and introduced into the chamber 30 through the source gas nozzle 40. Further, the pressure of the source gas in the chamber 30 is adjusted to a preset pressure by the automatic pressure adjuster 52. The automatic pressure regulator 52 includes, for example, a valve or the like provided between the exhaust port 50 and the exhaust pump 54 and capable of changing the degree of opening and closing. By adjusting the conductance, the amount of the source gas exhausted is changed, and the pressure in the chamber 30 is adjusted. The automatic pressure regulator 52 automatically adjusts the pressure in the chamber 30 based on a control signal from an external control unit (not shown), for example, according to a preset pressure program.

  In this embodiment mode, the source gas is a gas containing halogen (fluorine, chlorine, or the like). The source gas is preferably diluted with a rare gas (such as helium, neon, or argon).

  The plasma antenna 32 is composed of a conductor. The plasma antenna 32 is spirally arranged on the outer surface of the upper cover 30 a of the insulator provided on the upper surface of the chamber 30. The plasma antenna 32 may be arranged in a coil shape on the outer peripheral surface of the chamber 30. In this case, the plasma antenna 32 is preferably provided so as to be electrically insulated from the metal chamber 30.

  The plasma antenna 32 is connected to a power source 34 via a matching unit 36. RF power in the RF frequency band and micro frequency band is supplied from the power source 34 to the plasma antenna 32. At this time, impedance matching is performed using the matching unit 36 so that electric power is efficiently introduced into the raw material gas supplied into the chamber 30. Thereby, electric power can be supplied to the gas introduced into the chamber 30, and the gas can be turned into plasma.

By generating the source gas plasma in the chamber 30, a precursor (Cu _x Cl _y ) is generated from the target 46a by the etching action of the source gas plasma, and this precursor is converted into copper ions by a reduction reaction. Deposit on the surface. As a result, a copper thin film is formed on the surface of the substrate 48a.

The reaction at this time is as follows.
(Chemical formula 1)
2Cu + Cl ₂ → 2CuCl → 2Cu ↓ + Cl ₂ ↑

  After the film forming process in the film forming process module 24, the power supply from the plasma antenna 32 and the supply of the source gas are stopped, and the chamber 30 is evacuated. The film-formed substrate 48 a is unloaded from the common transfer chamber 20 to the load chamber 18 using the transfer mechanism 22, and is further returned to the cassette container 10 by the transfer mechanism 14. In this way, the film forming process on the substrate 48a is repeated.

  An unnecessary region of the copper thin film formed on the surface of the substrate 48a can be efficiently removed by a CMP apparatus (Chemical Mechanical Polishing). The CMP apparatus is an apparatus for polishing and removing a copper thin film formed on the surface of the substrate 48a by using a slurry. Thereby, the surface of the substrate 48a can be planarly polished, and only the copper deposited in the grooves on the surface of the substrate 48a can be left as a damascene wiring pattern.

  Next, the cleaning process in the chamber 30 of the film forming process module 24 will be described. In the cleaning process, when the metal film is repeatedly formed on the substrate 48a in the chamber 30, as shown in FIG. 4, the inner wall of the chamber 30 and the contents in the chamber 30 (target support 46, The unnecessary metal 60 deposited on the substrate support 48 or the like is removed. The cleaning process is executed according to the flowchart of FIG.

  In step S10, a cleaning process is prepared. When performing the cleaning process, the substrate 48 a is unloaded from the chamber 30, and the target 46 a is also unloaded from the chamber 30. According to the configuration of the present embodiment, the target 46 a can be retracted to the common transfer chamber 20 using the transfer mechanism 22 without opening the chamber 30 to the atmosphere.

  In step S <b> 12, a cleaning gas is introduced into the chamber 30. After the target 46 a and the substrate 48 a are unloaded from the chamber 30, the chamber 30 is evacuated to a vacuum by an exhaust pump 54 connected to the exhaust port 50. After the chamber 30 is evacuated to vacuum, a cleaning gas is introduced into the chamber 30. The flow rate of the cleaning gas is adjusted by the cleaning gas flow rate controller 42 and introduced into the chamber 30 via the cleaning gas nozzle 44.

  The cleaning gas is a gas containing halogen (fluorine, chlorine, etc.). The cleaning gas is preferably diluted with a rare gas (such as helium, neon, or argon). In this embodiment mode, an example is described in which a cleaning gas containing chlorine as a halogen and argon as a rare gas is used. However, the same applies when fluorine is used as a halogen or helium or neon is used as a rare gas. The effect can be obtained.

  The halogen concentration is preferably adjusted to be 5% or more. The cleaning gas preferably contains halogen at a concentration of 50% or less, and more preferably contains halogen at a concentration of 30% or less. By setting this concentration range, it becomes possible to efficiently supply radicals to the unwanted material 60 when cleaning gas plasma is generated, and cleaning can be performed more effectively. Further, radicals and ions of rare gas are generated in the cleaning plasma, and these collide with the unnecessary object 60 to give energy, thereby promoting the etching action of the unnecessary object 60 by the halogen radical and performing the cleaning efficiently. It becomes possible.

  The cleaning gas nozzle 44 is preferably disposed in a region closer to the plasma antenna 32 than the exhaust port 50 of the chamber 30. In general, the exhaust port 50 is provided in the lower portion of the chamber 30 and the plasma antenna 32 is provided in the upper portion of the exhaust port 50, so that the cleaning gas nozzle 44 is preferably disposed in the upper portion of the chamber 30. With such a relative arrangement, the flow of the cleaning gas in the chamber 30 can be made smooth toward the exhaust port, and the unnecessary material 60 etched by this gas flow can be transferred to the exhaust port 50. And can be transported effectively. Further, as will be described later, the cleaning gas pressure can be changed to change the plasma generation region of the cleaning gas from the upstream side to the downstream side of the gas flow, thereby efficiently removing the unwanted material 60.

  Further, it is also preferable to preheat the gas before introducing the gas into the chamber 30 by supplying a cleaning gas via the gas heating unit 58. By increasing the temperature of the cleaning gas before introducing it into the chamber 30, the energy applied in the chamber 30 can be reduced. Thereby, the cleaning efficiency can be increased.

  In step S14, a cleaning gas plasma is generated to perform a cleaning process. In a state where the cleaning gas is introduced into the chamber 30, high frequency power in the RF frequency band or the micro frequency band is output from the power supply 34. At this time, impedance matching is performed using the matching unit 36 so that electric power is efficiently introduced into the cleaning gas supplied into the chamber 30. As a result, electric power is supplied from the plasma antenna 32 to the cleaning gas in the chamber 30, and cleaning gas plasma is generated in the chamber 30.

  At this time, the cleaning gas is adjusted to the first pressure P1 in step S12 so that the cleaning gas plasma is generated in the vicinity of the plasma antenna 32. The higher the cleaning gas pressure is, the more concentrated the plasma is generated in the vicinity of the plasma antenna 32, and the lower the cleaning gas pressure is, the farther the plasma generation region extends from the plasma antenna 32. Therefore, the first pressure P <b> 1 is set such that the plasma is generated in the vicinity of the plasma antenna 32 within the range where the cleaning gas plasma is generated in the chamber 30.

  Specifically, the pressure of the cleaning gas in the chamber 30 is adjusted to the preset first pressure P1 by the automatic pressure adjuster 52. The first pressure P1 is preferably set to a pressure range of about 100 mTorr to 1000 mTorr, although it depends on the internal volume of the chamber 30 and the like.

As a result, as shown in FIG. 5, a donut-shaped cleaning plasma 62 is generated so as to concentrate in the vicinity of the plasma antenna 32. By generating a cleaning plasma 62 in the chamber 30, radicals of halogen (chlorine) are supplied from the plasma 62 to an unnecessary object 60 in the chamber 30. As a result, the unnecessary material 60 is etched and exhausted from the exhaust port 50 as a reactant such as Cu _x Cl _y .

  At this time, the cleaning can be more effectively performed by providing the chamber 30 with a temperature gradient in the temperature range from room temperature to 200 ° C. The temperature gradient is preferably provided so that the temperature of the site to be cleaned is higher than the region of the site to which the reactant is discharged. That is, in step S <b> 14, it is preferable to provide a temperature gradient so that the temperature in the vicinity of the plasma antenna 32 is higher than the temperature in the vicinity of the exhaust port 50.

  The temperature gradient can be provided by a sheath heater 56 provided on the outer periphery of the chamber 30. The sheath heater 56 is divided and installed in each part of the chamber 30, and a desired temperature gradient is provided in the chamber 30 by adjusting the temperature of each sheath heater 56 using a temperature controller or the like.

  In step S14, plasma is generated in the vicinity of the plasma antenna 32, and the unnecessary material 60 adhering to the vicinity of the plasma antenna 32 is removed. Therefore, the temperature of the sheath heater 56 provided in the vicinity of the plasma antenna 32 is separated from the plasma antenna 32. By making the temperature higher than the temperature of the sheath heater 56 provided at the other position (for example, near the exhaust port 50), the unnecessary object 60 can be efficiently cleaned.

  Further, without using the sheath heater 56, the chamber 30 can be given a temperature gradient by heating with the cleaning gas plasma itself. When the cleaning gas plasma is generated in the chamber 30, the region in the vicinity of the plasma is heated by the plasma itself to increase the temperature, and the temperature decreases as the distance from the plasma increases. In this way, a temperature gradient can be applied to each part of the chamber 30.

  In step S14, plasma is generated in the vicinity of the plasma antenna 32, and the unnecessary material 60 attached to the area in the vicinity thereof is removed, so that the area in the vicinity of the plasma antenna 32 is heated by the plasma and separated from the plasma antenna 32. The temperature becomes higher than the position (for example, near the exhaust port 50), and the unnecessary object 60 can be efficiently cleaned.

  As described above, the unnecessary gas 60 in the region near the plasma antenna 32 can be removed by generating the cleaning gas plasma under the first pressure P1. However, the cleaning of the region away from the plasma antenna 32 is insufficient, and some of the reactants may be re-adsorbed to the site away from the plasma antenna 32, so they are removed by the following process.

  In step S16, the pressure of the cleaning gas introduced into the chamber 30 is changed. The flow rate of the cleaning gas is adjusted by the cleaning gas flow rate controller 42 and introduced into the chamber 30 via the cleaning gas nozzle 44. At this time, the cleaning gas is adjusted to the second pressure P2 so that the cleaning gas plasma is generated farther from the plasma antenna 32 than in step S14. That is, as the cleaning gas pressure decreases, the plasma generation region extends farther from the plasma antenna 32, and thus the pressure is adjusted so that the second pressure P2 is lower than the first pressure P1.

  Specifically, the pressure of the cleaning gas in the chamber 30 is adjusted to a preset second pressure P2 by the automatic pressure adjuster 52. The second pressure P2 is preferably a pressure lower than the first pressure P1 within a pressure range of about 100 mTorr to 1000 mTorr, although it depends on the internal volume of the chamber 30 and the like.

  At this time, the composition, concentration, and preheating of the cleaning gas are preferably the same as in step S12. However, these may be changed as necessary.

  In step S18, a cleaning gas plasma is generated to perform a cleaning process. With the cleaning gas introduced into the chamber 30 at the second pressure P2, high frequency power in the RF frequency band or micro frequency band is output from the power supply 34. At this time, impedance matching is performed using the matching unit 36 so that electric power is efficiently introduced into the cleaning gas supplied into the chamber 30. As a result, electric power is supplied from the plasma antenna 32 to the cleaning gas in the chamber 30, and cleaning gas plasma is generated in the chamber 30.

Specifically, as shown in FIG. 6, cleaning plasma 62 extending to a region away from the plasma antenna 32 is generated. By generating a cleaning plasma 62 in the chamber 30, radicals of halogen (chlorine) are supplied from the plasma 62 to an unnecessary object 60 in the chamber 30. As a result, the unwanted material 60 attached to the region away from the plasma antenna 32 is etched and exhausted from the exhaust port 50 as a reactant such as Cu _x Cl _y .

  At this time, it is preferable to perform cleaning more effectively by providing temperature gradients in the temperature range of room temperature to 200 ° C. in each part of the chamber 30 as in step S14. Also in this case, the temperature gradient is preferably provided so that the temperature of the site to be cleaned is higher than the region of the site to which the reactant is discharged. That is, it is preferable to provide a temperature gradient so that the temperature in the vicinity of the region where the plasma 62 is generated is higher than the temperature in the vicinity of the exhaust port 50. The temperature gradient can be applied by the sheath heater 56 provided on the outer periphery of the chamber 30 or the cleaning gas plasma 62 itself.

  For example, in step S <b> 18, the plasma 62 extending far from the plasma antenna 32 is generated to remove the unnecessary material 60, so that the temperature of the sheath heater 56 provided at the site to be cleaned is further away from the plasma 62. By making the temperature higher than the temperature of the sheath heater 56 provided at a position (for example, near the exhaust port 50), the unnecessary object 60 can be efficiently cleaned.

  Further, for example, the region in the vicinity of the plasma 62 is heated by the plasma, and the temperature of the portion to be cleaned becomes higher than a position further away from the plasma 62 (for example, the vicinity of the exhaust port 50, etc.). Can be efficiently performed.

  As described above, by generating the cleaning gas plasma under the second pressure P2, it is possible to remove the unwanted matter 60 attached to the region away from the plasma antenna 32. As described above, by changing the pressure of the cleaning gas in the chamber 30, it is possible to move the generation region of the cleaning gas plasma 62 in the chamber 30. It can be removed efficiently.

  In this embodiment, the generation region of the plasma 62 in the chamber 30 is changed by generating the plasma 62 by changing the pressure of the cleaning gas in two stages. However, the present invention is not limited to this. Absent. The change in the pressure of the cleaning gas may be three or more steps or may be changed continuously.

  Specifically, every time the pressure of the cleaning gas is reduced by about 100 mTorr, the generation region of the cleaning gas plasma 62 extends to a position away from the plasma antenna 32 by about 50 mm. Therefore, it is preferable to adjust the pressure of the cleaning gas so that the plasma 62 is generated in the vicinity of the region that needs to be cleaned, according to the size and shape of the chamber 30 and the amount of unnecessary material 60 attached to each part in the chamber 30. is there. Further, the time for changing the pressure may be adjusted according to the amount of the unnecessary material 60 attached to each part in the chamber 30.

  In the present embodiment, the generation region of the cleaning gas plasma 62 is changed from the upstream side to the downstream side of the exhaust gas in the chamber 30, but the present invention is not limited to this. However, by changing the generation region of the cleaning gas plasma 62 from the upstream side to the downstream side of the exhaust, there is an advantage that the reactant generated from the unnecessary material 60 can be efficiently discharged to the exhaust port 50.

  Further, as shown in FIG. 7, it is also preferable to provide an adsorption trap 64 in the exhaust line of the chamber 30. The adsorption trap 64 has a cooling mechanism for cooling to room temperature or lower, and can trap reaction products. The adsorption trap 64 is further provided with heating means, and the trap can be regenerated by desorbing the reaction product by heating the adsorption trap 64 to room temperature or higher after the etching process is completed. As a result, the amount of reactant flowing into the exhaust pump 54 can be reduced, and there is an advantage that the apparatus can be maintained simply by replacing the adsorption trap 64.

It is a figure which shows the structure of the film-forming system in embodiment of this invention. It is sectional drawing which shows the structure of the film-forming apparatus in embodiment of this invention. It is a flowchart which shows the cleaning method in embodiment of this invention. It is a conceptual diagram explaining the cleaning method in embodiment of this invention. It is a conceptual diagram explaining the cleaning method in embodiment of this invention. It is a conceptual diagram explaining the cleaning method in embodiment of this invention. It is sectional drawing which shows the structure of the film-forming apparatus in embodiment of this invention.

Explanation of symbols

  10 cassette container, 12 transfer chamber, 14 transfer mechanism, 16 rotary stage, 18 load chamber, 20 common transfer chamber, 22 transfer mechanism, 24 film forming module, 30 chamber, 30a upper lid, 32 plasma antenna, 34 power supply, 36 alignment 38, source gas flow controller, 40 source gas nozzle, 42 cleaning gas flow controller, 44 cleaning gas nozzle, 46 target support, 46a copper plate target, 48 substrate support, 48a substrate, 50 exhaust port, 52 automatic pressure regulator , 54 Exhaust pump, 56 Sheath heater, 58 Gas heating unit, 60 Unnecessary matter, 62 Cleaning plasma, 64 Adsorption trap, 100 Semiconductor manufacturing apparatus.

Claims (13)

A chamber for film formation;
Gas supply means for supplying a cleaning gas containing halogen into the chamber;
Pressure adjusting means for adjusting the pressure of the cleaning gas in the chamber;
A film forming apparatus comprising: plasma generating means for converting the cleaning gas into plasma,
When cleaning unnecessary substances adhering to the inner wall of the chamber by the action of the cleaning gas plasma generated by the plasma generating means, the pressure of the cleaning gas in the chamber can be changed by the pressure adjusting means. A film forming apparatus characterized by the above. The film forming apparatus according to claim 1,
The pressure adjusting means sets the cleaning gas in the chamber to a first pressure at the initial stage of cleaning, and then lowers the cleaning gas in the chamber below the first pressure. Membrane device. The film forming apparatus according to claim 1 or 2,
The film forming apparatus, wherein the cleaning gas is a halogen-containing gas diluted with a rare gas. It is the film-forming apparatus as described in any one of Claims 1-3,
A film forming apparatus comprising gas flow rate adjusting means for adjusting a flow rate of the cleaning gas supplied into the chamber. It is the film-forming apparatus as described in any one of Claims 1-4,
A film forming apparatus characterized in that a temperature gradient can be provided in the chamber in a temperature range of room temperature to 200 ° C. during cleaning. It is the film-forming apparatus as described in any one of Claims 1-5,
The film forming apparatus, wherein the cleaning gas contains halogen in a concentration of 5% to 50%. It is the film-forming apparatus as described in any one of Claims 1-6,
The film supply apparatus includes a heating unit that heats the cleaning gas before introducing the cleaning gas into the chamber. Including the film forming apparatus according to claim 1,
The film formation is performed by generating a plasma in the chamber, etching a target installed in the chamber, and supplying a reaction product generated by the etching to the substrate surface,
A film forming system comprising: a target transport unit for transporting the target into and out of the chamber. A first cleaning step in which cleaning gas containing halogen is supplied to a chamber for film formation at a first pressure, and the cleaning gas is turned into plasma to clean unnecessary substances attached to the inner wall of the chamber;
A second cleaning step in which the cleaning gas is supplied into the chamber at a pressure lower than the first pressure, and the cleaning gas is turned into plasma to clean unnecessary substances attached to the inner wall of the chamber;
A film forming apparatus cleaning method comprising: A film forming apparatus cleaning method according to claim 9,
The method for cleaning a film forming apparatus, wherein the cleaning gas is a halogen-containing gas diluted with a rare gas. It is a cleaning method of the film-forming apparatus according to claim 9 or 10,
In the first cleaning step or the second cleaning step, a temperature gradient is provided in the chamber in a temperature range from room temperature to 200 ° C. It is the cleaning method of the film-forming apparatus as described in any one of Claims 9-11,
The cleaning method for a film forming apparatus, wherein the cleaning gas contains halogen in a concentration of 5% to 50%. A method for cleaning a film forming apparatus according to any one of claims 9 to 12,
In the first cleaning step or the second cleaning step, the cleaning gas is heated before the cleaning gas is introduced into the chamber.

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