JP3702998B2 - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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JP3702998B2
JP3702998B2 JP30561399A JP30561399A JP3702998B2 JP 3702998 B2 JP3702998 B2 JP 3702998B2 JP 30561399 A JP30561399 A JP 30561399A JP 30561399 A JP30561399 A JP 30561399A JP 3702998 B2 JP3702998 B2 JP 3702998B2
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substrate
resin
groove
resin substrate
cutting
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JP2001127089A (en
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茂次 村松
拓也 風間
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15158—Shape the die mounting substrate being other than a cuboid
    • H01L2924/15159—Side view

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は半導体装置の製造方法に関し、より詳細には素子搭載部が一方の面に形成された複数個の回路基板が隣接して一体に形成されて成る基板の各素子搭載部に半導体素子を搭載し、基板の半導体素子を搭載した面側を樹脂封止した後、樹脂封止された基板を個片に分離して半導体装置を得る半導体装置の製造方法に関する。
【０００２】
【従来の技術】
半導体パッケージの小型化とともに半導体装置を効率的に量産する方法として、多数個取り用の基板に半導体素子あるいは回路部品等を搭載し、半導体素子等を搭載した基板の一方の面を樹脂封止した後、樹脂封止された基板を個片に切断して半導体装置を得る方法がある。
図５は複数の回路基板が隣接して一体に形成された樹脂基板１０の各々の回路基板に半導体素子１２を搭載し、半導体素子１２を搭載した一方の面を封止樹脂１４によって樹脂封止した状態を示す。半導体素子１２を樹脂封止する方法としては、樹脂封止金型を用いた樹脂成形による方法、ポッティング法等がある。樹脂封止した後、樹脂基板１０及び封止樹脂１４を所定位置で切断することにより個片の半導体装置が得られる。図の矢印が切断位置を示す。
このように、樹脂基板１０に半導体素子１２を搭載し、樹脂基板１０の面全体を樹脂封止した後、個片に切断して半導体装置を得る方法は、効率的に半導体装置を製造できるという利点がある。
【０００３】
半導体素子１２を多数個搭載できる樹脂基板１０を用いた半導体装置の製造方法で樹脂封止した樹脂基板１０を切断する場合は図６、７に示す方法による。図６に示す方法は、樹脂基板１０の下面にあらかじめ粘着テープ１６を粘着しておき、粘着テープ１６まで若干切り込むようにして樹脂基板１０を切断する方法である。１８が切断刃の刃先が移動した切断部である。図７に示す方法は、固定治具２０に樹脂封止後の樹脂基板１０を配置して切断する方法である。この場合は、固定治具２０の樹脂基板１０を支持する面に、切断刃の移動位置に合わせて溝部２２を設け、溝部２２の内側を切断刃の刃先が移動するようにして樹脂基板１０を切断する。
【０００４】
【発明が解決しようとする課題】
しかしながら、図６に示すように、樹脂基板１０に粘着テープ１６を粘着して樹脂基板１０を切断する場合は、樹脂基板１０とは異質の粘着テープ１６まで切断するため切断刃の寿命が短くなり、また、切断に時間がかかったり、切断精度が低下するという問題がある。
また、図７に示すように、固定治具２０を用いて樹脂基板１０を切断する場合は、樹脂基板１０を切断する位置に合わせて溝部２２を形成した固定治具２０を用意する必要があるから、樹脂基板１０の切断位置が異なる場合には別個に固定治具２０を用意しなければならない。
【０００５】
なお、樹脂基板１０を完全に切断しない方法であれば、粘着テープ１６を使用したり、溝部２２を設けた固定治具２０を使用したりする必要はない。しかし、この場合は樹脂基板１０をハーフカット（樹脂基板の中途部まで切り込みを設ける）した状態で折って分離するから樹脂基板１０の端面にばりが生じ、ばりを除去するため樹脂基板１０の端面を面取りする加工が別途必要になる。
本発明はこのような多数個取り用の基板に半導体素子を搭載し、基板の半導体素子を搭載した面全体を樹脂封止した後、個片に切断して半導体装置を製造する方法に関し、樹脂ばりを生じさせずに基板を確実にかつ効率的に個片に切断することができ、半導体装置の良品を効率的に製造することができる半導体装置の製造方法を提供することを目的としている。
【０００６】
【課題を解決するための手段】
上記目的を達成するため、本発明は次の構成を備える。
すなわち、半導体素子を搭載する素子搭載部が一方の面に形成された複数個の回路基板が一体に形成されると共に、他方の面側に各々の回路基板を区分する位置に合わせて溝部が形成された基板の各素子搭載部に半導体素子を搭載し、該基板の半導体素子が搭載された一方の面側を封止樹脂により樹脂封止した後、該樹脂封止された基板の他方の面を支持体に当接させて基板を支持し、前記基板の樹脂封止された面側から、切断刃の刃先を、前記溝部に沿って支持体と前記溝部とにより囲まれた空隙内を該支持体から離間させて移動させ、前記封止樹脂及び基板を切断して個片の半導体装置を得ることを特徴とする。
【０００７】
また、半導体素子を搭載する素子搭載部が一方の面に形成された複数個の回路基板が一体に形成された基板の各素子搭載部に半導体素子を搭載し、 該基板の半導体素子が搭載された一方の面側を封止樹脂により樹脂封止した後、該樹脂封止された基板の他方の面側に、各々の回路基板を区分する位置に沿って溝部を形成し、該溝部が形成された基板の他方の面を支持体に当接させて基板を支持し、前記基板の樹脂封止された面側から、切断刃の刃先を、前記溝部に沿って支持体と前記溝部とにより囲まれた空隙内を該支持体から離間させて移動させ、前記封止樹脂及び基板を切断して個片の半導体装置を得ることを特徴とする。なお、溝部の断面形状をＶ字形に形成すると、回路基板の端面が面取りされた状態で得られるという利点がある。
【０００８】
【発明の実施の形態】
以下、本発明の好適な実施形態について添付図面に基づき詳細に説明する。
図１は本発明に係る半導体装置の製造方法の第１の実施形態を示す。図１(a)は、まず、樹脂基板１０に半導体素子１２を搭載した状態を示す。なお、樹脂基板１０は多数個の半導体素子１２が搭載可能な一枚の板体状に形成したものである。図のＡ部分が半導体素子を搭載する単位となる回路基板１０ａであり、樹脂基板１０はこの回路基板１０ａが一体に連設されたものである。各々の回路基板１０ａの一方の面には半導体素子１２を搭載するための素子搭載部と半導体素子１２と電気的に接続する配線パターン１１が形成されている。
【０００９】
実施形態では半導体素子１２と配線パターン１１とはワイヤボンディングによって電気的に接続される。１３がボンディングワイヤである。回路基板１０ａの一方の面は樹脂封止される面であり、他方の面は半導体装置を実装する際の実装面となる。ＢＧＡ基板の場合には、回路基板１０ａの他方の面にはボール状の外部接続端子を接合するためのランドが配置され、回路基板１０ａの一方の面に設けた配線パターン１１とランドとは回路基板１０ａに形成したスルーホールを介して電気的に接続される。なお、図では、回路基板１０ａの他方の面に形成するランド等は省略している。
【００１０】
本実施形態の樹脂基板１０で特徴とする点は、半導体素子１２を搭載する樹脂基板１０の他方の面に、各々の回路基板１０ａを区分する位置（境界位置）に沿って回路基板１０ａの他方の面に溝部３０を形成したことにある。樹脂基板１０に縦横に回路基板１０ａを配列した場合は、溝部３０は隣接する回路基板１０ａを区分する位置に沿って格子状に形成されることになる。この溝部３０は樹脂基板１０を切断刃で切断する際に、切断刃の刃先が樹脂基板１０を支持する支持体に当接しないようにするために形成したものである。本実施形態では溝部３０を断面形状でＵ字形に形成した。溝部３０を形成する場合は、回路基板１０ａに形成した配線パターン１１あるいは樹脂基板１０に形成したスルーホールを基準位置として形成すればよい。
【００１１】
図１(b)は、半導体素子１２を搭載した樹脂基板１０の一方の面を全面にわたって封止樹脂１４によって樹脂封止した状態を示す。樹脂封止する際には、半導体素子１２及びボンディングワイヤ１３が封止樹脂１４内に埋没するようにする。封止樹脂１４により樹脂基板１０の片面を樹脂封止する方法としては、樹脂封止金型で樹脂基板１０をクランプして樹脂成形する方法、樹脂基板１０の外周囲をダムで流れ止めして樹脂をポッティングする方法等がある。
【００１２】
図１(c)は、一方の面を樹脂封止した樹脂基板１０を、樹脂基板１０の支持体である吸着テーブル３２にエア吸着して支持し、切断刃４０を用いて封止樹脂１４及び樹脂基板１０を切断して個片の半導体装置を得る工程を示す。
封止樹脂１４及び樹脂基板１０を切断刃４０によって切断する工程では、切断刃４０の刃先を、樹脂基板１０に形成した溝部３０の位置に沿って、吸着テーブル３２の支持面と溝部３０とで囲まれた空隙内を移動するように設定する。吸着テーブル３２の支持面は平面に形成されているから、溝部３０を形成した部位で断面矩形状の空隙が形成される。
【００１３】
図２は、樹脂基板１０及び封止樹脂１４を切断する切断刃４０の刃先位置と溝部３０との位置関係を拡大して示す断面図である。
図のように、切断刃４０が移動した切断部１８は、溝部３０を形成した部分で、吸着テーブル３２の支持面と溝部３０とで囲まれた空隙内を切断刃４０の刃先が移動するようにする。このように切断するために、溝部３０の幅寸法を切断部１８の幅寸法よりも広く設定し、切断刃４０による切断部１８の深さ寸法を溝部３０内へ切断刃４０の刃先が突出する寸法に設定する。
切断刃による切断幅は通常０．１ｍｍ〜０．２ｍｍ程度である。したがって、溝部３０の幅寸法は０．４ｍｍ〜０．５ｍｍ程度あればよい。また、溝部３０の深さ寸法は５０μｍ程度以上にすることで、十分に切断刃の刃先を吸着テーブル３２の支持面から離間させて切断することが可能である。
【００１４】
上述した方法にしたがい、切断刃４０により溝部３０に沿って樹脂基板１０及び封止樹脂１４を切断することにより、個片の半導体装置が得られる。図１(d)は個片に切断された半導体装置５０を示す。回路基板１０ａの一方の面に半導体素子１２が搭載され、回路基板１０ａの一方の面で半導体素子１２が樹脂封止されている。切断刃４０により樹脂基板１０及び封止樹脂１４を切断したことにより封止樹脂１４の側面と樹脂基板１０の側面とが同一平面になる。３０ａは溝部３０で切断したことによって形成された切り欠き部である。
【００１５】
本実施形態の半導体装置の製造方法は、半導体素子１２を搭載する面とは反対側の面に、あらかじめ溝部３０を形成した樹脂基板１０を使用することを特徴とし、溝部３０と支持体の支持面とで囲まれた空隙内を切断刃４０の刃先が移動するように設定して切断することによって、支持体である吸着テーブル３２から切断刃４０の刃先を離間させて樹脂基板１０を切断可能にしたものである。
【００１６】
本実施形態の方法によれば、樹脂基板１０を支持する支持体を切断刃４０が切断することはないから、支持体の支持面は単なる平坦面に形成するだけでよい。したがって、製品によって樹脂基板１０の切断位置が異なる場合でも吸着テーブル３２等の支持体を交換する必要がなく、共通に支持体を使用することが可能になる。
【００１７】
また、樹脂基板１０を支持する支持体として、吸着テーブル３２等の支持体の表面に粘着テープを粘着したものを使用することも可能である。この場合も、切断刃４０が粘着テープまで切り込むことがないから、従来のように粘着テープ１６を切断刃４０が切断することによて切断刃４０が摩耗したり、加工速度が低下したりするといった問題を回避することができる。また、支持体に粘着テープを粘着するかわりに、樹脂基板１０の他方の面に粘着テープ１６を粘着した状態で、吸着テーブル３２等で樹脂基板１０を支持して樹脂基板１０を切断することもできる。樹脂基板１０の他方の面に粘着テープ１６を粘着して樹脂基板１０を切断した場合は、切断後の半導体装置が個々に分離されないよう保持できるという利点がある。
【００１８】
また、本実施形態の方法は樹脂基板１０及び封止樹脂１４を完全に切断して個片の半導体装置を得るから、個片に切断された回路基板１０ａの端面にばりが生じるといった問題がまったく生じない。樹脂基板１０としてガラス繊維入りの基板を使用する場合でも、切断部にばりのない半導体装置を得ることができる。
また、樹脂基板１０として複数個の半導体素子を搭載できる樹脂基板１０を使用することによって、半導体装置を効率的に生産することが可能である。
【００１９】
なお、本実施形態では回路基板１０ａに半導体素子１２のみを搭載したが、回路基板１０ａに半導体素子１２以外のチップ抵抗等の回路部品を搭載することも可能である。これら素子搭載部品を回路基板１０ａの一方の面に搭載し、樹脂基板１０の一方の面を樹脂封止した後、上記方法によって樹脂封止した樹脂基板１０を切断することにより、個片のモジュール化された半導体装置が得られる。
【００２０】
図３は半導体装置の製造方法の第２の実施形態を示す。この実施形態では回路基板１０ａの他方の面に断面形状でＶ字形の溝部３０を形成した樹脂基板１０を使用し、溝部３０の位置に沿って樹脂基板１０を切断することを特徴とする。Ｖ字形の溝部３０は上記実施形態と同様に、一体に連設した回路基板１０ａを個片に区分する位置に一致して形成されており、切断刃４０の刃先が溝部３０に沿って溝部３０内を移動して樹脂基板１０を切断するように設定する。これによって樹脂基板１０が切断刃で完全に切断される。
【００２１】
本実施形態のように樹脂基板１０の他方の面に断面形状でＶ字形の溝部３０を形成し、溝部３０に沿って切断刃４０により樹脂基板１０を切断する方法による場合も、樹脂基板１０が完全に切断されることによって個片に切断された回路基板１０ａの端面にばりが生じることを防止することができる。また、溝部３０をＶ字形に形成したことによって、切断後の回路基板１０ａの端面が面取りされた状態で得られるという利点がある。また、本実施形態の場合も、吸着テーブル３２は樹脂基板１０を支持する面を平坦面に形成したものでよく、切断位置が異なる製品を切断する場合でも共通の吸着テーブル３２を使用することができる。また、樹脂基板１０を支持する吸着テーブル３２や樹脂基板１０に粘着した粘着テープ１６を切断刃で切り込むことがなく、上記実施形態と同様に切断刃の摩耗を防止し、切断加工の作業性を向上させることができる。
【００２２】
なお、上記実施形態では、半導体素子１２を搭載する面と反対側の面にあらかじめ溝部３０を形成した樹脂基板１０を使用したが、図４に示すように、溝部３０を設けていない樹脂基板１０に半導体素子１２を搭載した後、樹脂基板１０に溝部３０を設け、切断刃４０によって樹脂基板１０を切断して個片の半導体装置を得ることも可能である。
図４(a)は、樹脂基板１０の一方の面に半導体素子１２を搭載した状態で、樹脂基板１０の他方の面には溝部３０を形成していない。図４(b)は、樹脂基板１０の一方の面を封止樹脂１４によって樹脂封止した状態である。
【００２３】
本実施形態では、樹脂基板１０の一方の面を樹脂封止した後、図４(c)に示すように、樹脂基板１０の他方の面に溝部３０を形成する。もちろん、溝部３０は樹脂基板１０を個片に分離する位置に沿って形成する。溝部３０はルーター加工等によって形成する。
図４(d)は、溝部３０を形成した樹脂基板１０を吸着テーブル３２によって支持し、切断刃４０により、溝部３０の位置に沿って樹脂基板１０を個片に切断している状態である。切断刃４０によって樹脂基板１０を切断する際に、切断刃４０の刃先が、溝部３０と吸着テーブル３２の支持面で囲まれた空隙内を移動するようにすることは上述した実施形態と同様である。
【００２４】
半導体装置の製造工程によっては、樹脂基板１０に溝部３０を形成する加工を樹脂封止工程の後に行う方が加工工程上、効率的である場合がある。たとえば、溝部３０を加工するルーター加工と、封止樹脂１４及び樹脂基板１０を切断する加工は同一の加工場で作業でき、搬送等の作業を考慮すると、効率的であるといった場合がある。そのような場合には、本実施形態の方法が適用できる。また、本実施形態では樹脂基板１０に断面Ｕ字状の溝部３０を形成したが、溝部３０を断面Ｖ字状に形成することももちろん可能である。
【００２５】
【発明の効果】
本発明に係る半導体装置の製造方法によれば、上述したように、基板に溝部を設けて樹脂封止した基板を切断することにより、切断刃によって基板を個片に切断する際に支持体を切り込むことなく封止樹脂及び樹脂基板を切断することができ、切断刃の摩耗を抑え、加工効率を向上させて高精度の加工が可能になる。また、切断部にばりを生じさせずに良品の半導体装置を得ることができる等の著効を奏する。
【図面の簡単な説明】
【図１】 半導体装置の製造方法の第１の実施形態の製造工程を示す説明図である。
【図２】 第１の実施形態において樹脂基板を切断する方法を拡大して示す説明図である。
【図３】 第２の実施形態における半導体装置の製造方法を示す説明図である。
【図４】 樹脂基板を樹脂封止した後、溝部を形成する方法による半導体装置の製造方法を示す説明図である。
【図５】 多数個取り用の基板を用いて半導体装置を製造する方法を示す説明図である。
【図６】 基板に粘着テープを粘着して半導体装置を製造する方法を示す説明図である。
【図７】 基板を固定治具に支持して半導体装置を製造する方法を示す説明図である。
【符号の説明】
１０ 樹脂基板
１０ａ 回路基板
１２ 半導体素子
１４ 封止樹脂
１６ 粘着テープ
１８ 切断部
２０ 固定治具
２２ 溝部
３０ 溝部
３２ 吸着テーブル
４０ 切断刃
５０ 半導体装置[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method of manufacturing a semiconductor device, and more specifically, a semiconductor element is formed on each element mounting portion of a substrate in which a plurality of circuit boards each having an element mounting portion formed on one surface are integrally formed adjacent to each other. The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor device is obtained by mounting and sealing a surface side of a substrate on which a semiconductor element is mounted, and then separating the resin-sealed substrate into individual pieces.
[0002]
[Prior art]
As a method for efficiently mass-producing semiconductor devices along with miniaturization of semiconductor packages, semiconductor elements or circuit components are mounted on a multi-chip substrate, and one side of the substrate on which the semiconductor elements are mounted is resin-sealed. Thereafter, there is a method of obtaining a semiconductor device by cutting a resin-sealed substrate into individual pieces.
In FIG. 5 , the semiconductor element 12 is mounted on each circuit board of the resin board 10 in which a plurality of circuit boards are integrally formed adjacent to each other, and one surface on which the semiconductor element 12 is mounted is sealed with a sealing resin 14. Shows the state. As a method for resin-sealing the semiconductor element 12, there are a method by resin molding using a resin-sealing mold, a potting method, and the like. After the resin sealing, the individual semiconductor device is obtained by cutting the resin substrate 10 and the sealing resin 14 at predetermined positions. The arrow in the figure indicates the cutting position.
As described above, the method of obtaining the semiconductor device by mounting the semiconductor element 12 on the resin substrate 10 and sealing the entire surface of the resin substrate 10 and then cutting the resin substrate 10 into individual pieces can efficiently manufacture the semiconductor device. There are advantages.
[0003]
By the method shown in FIG. 6, 7 when cutting the resin substrate 10 of resin-sealed in the manufacturing method of the semiconductor device using the resin substrate 10 of the semiconductor element 12 can multiplicity mounted. The method shown in FIG. 6 is a method in which the adhesive tape 16 is adhered to the lower surface of the resin substrate 10 in advance, and the resin substrate 10 is cut so that the adhesive tape 16 is slightly cut. Reference numeral 18 denotes a cutting portion where the cutting edge of the cutting blade has moved. The method shown in FIG. 7 is a method in which the resin substrate 10 after resin sealing is placed on the fixing jig 20 and cut. In this case, a groove 22 is provided on the surface of the fixing jig 20 that supports the resin substrate 10 in accordance with the moving position of the cutting blade, and the cutting edge of the cutting blade moves inside the groove 22 so that the resin substrate 10 is moved. Disconnect.
[0004]
[Problems to be solved by the invention]
However, as shown in FIG. 6 , when the adhesive tape 16 is adhered to the resin substrate 10 and the resin substrate 10 is cut, the adhesive tape 16 that is different from the resin substrate 10 is cut, so the life of the cutting blade is shortened. Also, there are problems that it takes time to cut and the cutting accuracy is lowered.
Further, as shown in FIG. 7 , when the resin substrate 10 is cut using the fixing jig 20, it is necessary to prepare the fixing jig 20 in which the groove portion 22 is formed in accordance with the position where the resin substrate 10 is cut. Therefore, when the cutting position of the resin substrate 10 is different, the fixing jig 20 must be prepared separately.
[0005]
In addition, if it is a method which does not cut | disconnect the resin substrate 10 completely, it is not necessary to use the adhesive tape 16 or the fixing jig 20 in which the groove part 22 was provided. However, in this case, since the resin substrate 10 is folded and separated in a half-cut state (a cut is provided in the middle of the resin substrate), flash occurs on the end surface of the resin substrate 10 and the end surface of the resin substrate 10 is removed to remove the flash. A chamfering process is required separately.
The present invention relates to a method of manufacturing a semiconductor device by mounting a semiconductor element on such a multi-piece substrate, sealing the entire surface of the substrate on which the semiconductor element is mounted, and then cutting it into individual pieces. An object of the present invention is to provide a method for manufacturing a semiconductor device that can reliably and efficiently cut a substrate into pieces without causing a flash and can efficiently manufacture a non-defective semiconductor device.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, the present invention comprises the following arrangement.
That is, a plurality of circuit boards each having an element mounting portion for mounting a semiconductor element formed on one surface are integrally formed, and a groove portion is formed on the other surface side in accordance with a position for dividing each circuit board. A semiconductor element is mounted on each element mounting portion of the substrate, and one surface side of the substrate on which the semiconductor element is mounted is sealed with a sealing resin, and then the other surface of the resin-sealed substrate the abut a support supporting a substrate, a resin sealed surface side of the substrate, the cutting edge of the cutting blade, the inside surrounded voids by a support along the groove and the groove It is characterized in that it is moved away from the support and the sealing resin and the substrate are cut to obtain individual semiconductor devices.
[0007]
In addition, a semiconductor element is mounted on each element mounting portion of a substrate on which a plurality of circuit boards each having an element mounting portion for mounting a semiconductor element formed on one surface are integrally formed, and the semiconductor element on the substrate is mounted After sealing one surface side with a sealing resin, a groove portion is formed on the other surface side of the resin-sealed substrate along a position where each circuit board is separated, and the groove portion is formed. has been the other surface of the substrate is brought into contact to support the substrate on a support, a resin sealed surface side of the substrate, the cutting edge of the cutting blade, the support and the groove along the groove It is characterized in that it is moved away from the support within the enclosed space, and the sealing resin and the substrate are cut to obtain individual semiconductor devices. In addition, when the cross-sectional shape of a groove part is formed in V shape, there exists an advantage that it can obtain in the state by which the end surface of the circuit board was chamfered .
[0008]
DETAILED DESCRIPTION OF THE INVENTION
Below, it will be described in detail with reference to the accompanying drawings preferred embodiments of the present invention.
FIG. 1 shows a first embodiment of a method of manufacturing a semiconductor device according to the present invention. FIG. 1A shows a state where a semiconductor element 12 is mounted on a resin substrate 10. The resin substrate 10 is formed in a single plate shape on which a large number of semiconductor elements 12 can be mounted. A part A in the figure is a circuit board 10a which is a unit for mounting a semiconductor element, and the resin board 10 is a circuit board 10a integrally connected. On one surface of each circuit board 10 a, an element mounting portion for mounting the semiconductor element 12 and a wiring pattern 11 electrically connected to the semiconductor element 12 are formed.
[0009]
In the embodiment, the semiconductor element 12 and the wiring pattern 11 are electrically connected by wire bonding. Reference numeral 13 denotes a bonding wire. One surface of the circuit board 10a is a resin-sealed surface, and the other surface is a mounting surface when the semiconductor device is mounted. In the case of a BGA substrate, a land for joining ball-shaped external connection terminals is disposed on the other surface of the circuit substrate 10a, and the wiring pattern 11 and the land provided on one surface of the circuit substrate 10a are circuits. It is electrically connected through a through hole formed in the substrate 10a. In the figure, lands formed on the other surface of the circuit board 10a are omitted.
[0010]
A feature of the resin substrate 10 of this embodiment is that the other surface of the circuit board 10a is arranged on the other surface of the resin substrate 10 on which the semiconductor element 12 is mounted along a position (boundary position) where each circuit board 10a is divided. The groove portion 30 is formed on the surface. When the circuit boards 10a are arranged vertically and horizontally on the resin board 10, the groove portions 30 are formed in a lattice shape along the position where the adjacent circuit boards 10a are divided. The groove 30 is formed to prevent the cutting edge of the cutting blade from coming into contact with the support that supports the resin substrate 10 when the resin substrate 10 is cut with a cutting blade. In the present embodiment, the groove portion 30 is formed in a U shape with a cross-sectional shape. When the groove 30 is formed, the wiring pattern 11 formed in the circuit board 10a or the through hole formed in the resin substrate 10 may be formed as a reference position.
[0011]
FIG. 1B shows a state where one surface of the resin substrate 10 on which the semiconductor element 12 is mounted is sealed with a sealing resin 14 over the entire surface. When the resin is sealed, the semiconductor element 12 and the bonding wire 13 are buried in the sealing resin 14. As a method of resin-sealing one side of the resin substrate 10 with the sealing resin 14, a method in which the resin substrate 10 is clamped with a resin-sealing mold and resin molding is performed, and the outer periphery of the resin substrate 10 is stopped by a dam. There is a method of potting resin.
[0012]
In FIG. 1C, the resin substrate 10 whose one surface is resin-sealed is supported by air suction on a suction table 32 that is a support of the resin substrate 10, and the sealing resin 14 and A process of cutting the resin substrate 10 to obtain individual semiconductor devices is shown.
In the process of cutting the sealing resin 14 and the resin substrate 10 with the cutting blade 40, the cutting edge 40 is moved along the position of the groove 30 formed in the resin substrate 10 with the support surface of the suction table 32 and the groove 30. Set to move in the enclosed gap. Since the support surface of the suction table 32 is formed as a flat surface, a gap having a rectangular cross section is formed at the site where the groove 30 is formed.
[0013]
FIG. 2 is an enlarged cross-sectional view showing the positional relationship between the cutting edge position of the cutting blade 40 for cutting the resin substrate 10 and the sealing resin 14 and the groove 30.
As shown in the figure, the cutting portion 18 to which the cutting blade 40 has moved is a portion where the groove portion 30 is formed, and the cutting edge of the cutting blade 40 moves within the space surrounded by the support surface of the suction table 32 and the groove portion 30. To. In order to cut in this way, the width dimension of the groove part 30 is set wider than the width dimension of the cutting part 18, and the cutting edge 18 of the cutting blade 40 protrudes into the groove part 30 by the depth dimension of the cutting part 18 by the cutting blade 40. Set to dimensions.
The cutting width by the cutting blade is usually about 0.1 mm to 0.2 mm. Therefore, the width dimension of the groove part 30 should just be about 0.4 mm-0.5 mm. Further, by setting the depth dimension of the groove part 30 to about 50 μm or more, the cutting edge of the cutting blade can be sufficiently separated from the support surface of the suction table 32 and cut.
[0014]
In accordance with the above-described method, the semiconductor substrate is obtained by cutting the resin substrate 10 and the sealing resin 14 along the groove portion 30 with the cutting blade 40. FIG. 1D shows the semiconductor device 50 cut into individual pieces. The semiconductor element 12 is mounted on one surface of the circuit board 10a, and the semiconductor element 12 is resin-sealed on one surface of the circuit board 10a. By cutting the resin substrate 10 and the sealing resin 14 with the cutting blade 40, the side surface of the sealing resin 14 and the side surface of the resin substrate 10 are flush with each other. Reference numeral 30 a denotes a notch formed by cutting the groove 30.
[0015]
The manufacturing method of the semiconductor device of this embodiment is characterized in that the resin substrate 10 in which the groove 30 is formed in advance on the surface opposite to the surface on which the semiconductor element 12 is mounted is used, and the groove 30 and the support are supported. By cutting so that the cutting edge of the cutting blade 40 moves within the space surrounded by the surface, the cutting edge of the cutting blade 40 can be separated from the suction table 32 as a support, and the resin substrate 10 can be cut. It is a thing.
[0016]
According to the method of the present embodiment, since the cutting blade 40 does not cut the support that supports the resin substrate 10, the support surface of the support need only be formed on a flat surface. Therefore, even when the cutting position of the resin substrate 10 differs depending on the product, it is not necessary to replace the support such as the suction table 32, and the support can be used in common.
[0017]
In addition, as a support for supporting the resin substrate 10, it is possible to use a support in which an adhesive tape is adhered to the surface of a support such as the suction table 32. Also in this case, since the cutting blade 40 does not cut to the adhesive tape, the cutting blade 40 is worn or the processing speed is reduced by the cutting blade 40 cutting the adhesive tape 16 as in the past. Such a problem can be avoided. Further, instead of adhering the adhesive tape to the support, the resin substrate 10 may be cut by supporting the resin substrate 10 with the suction table 32 or the like while the adhesive tape 16 is adhered to the other surface of the resin substrate 10. it can. When the adhesive tape 16 is adhered to the other surface of the resin substrate 10 and the resin substrate 10 is cut, there is an advantage that the semiconductor devices after cutting can be held so as not to be separated individually.
[0018]
In addition, since the method of this embodiment completely cuts the resin substrate 10 and the sealing resin 14 to obtain individual semiconductor devices, there is no problem that the end surface of the circuit substrate 10a cut into individual pieces is flashed. Does not occur. Even when a glass fiber-containing substrate is used as the resin substrate 10, a semiconductor device having no burrs can be obtained.
Further, by using the resin substrate 10 on which a plurality of semiconductor elements can be mounted as the resin substrate 10, it is possible to efficiently produce a semiconductor device.
[0019]
In the present embodiment, only the semiconductor element 12 is mounted on the circuit board 10a, but it is also possible to mount circuit components such as chip resistors other than the semiconductor element 12 on the circuit board 10a. These element mounting components are mounted on one surface of the circuit board 10a, one surface of the resin substrate 10 is resin-sealed, and then the resin substrate 10 resin-sealed by the above method is cut to obtain individual modules. A semiconductor device can be obtained.
[0020]
FIG. 3 shows a second embodiment of a method for manufacturing a semiconductor device. In this embodiment, the resin substrate 10 having a V-shaped groove 30 formed in a cross-sectional shape on the other surface of the circuit board 10 a is used, and the resin substrate 10 is cut along the position of the groove 30. Similar to the above embodiment, the V-shaped groove portion 30 is formed so as to coincide with the position where the integrally formed circuit board 10 a is divided into pieces, and the cutting edge of the cutting blade 40 extends along the groove portion 30. It is set so that the resin substrate 10 is cut by moving inside. Thereby, the resin substrate 10 is completely cut by the cutting blade.
[0021]
The resin substrate 10 is also formed by a method in which the V-shaped groove portion 30 having a cross-sectional shape is formed on the other surface of the resin substrate 10 and the resin substrate 10 is cut by the cutting blade 40 along the groove portion 30 as in the present embodiment. By completely cutting, it is possible to prevent the end face of the circuit board 10a cut into individual pieces from being flashed. Further, since the groove portion 30 is formed in a V shape, there is an advantage that the end surface of the circuit board 10a after cutting is obtained in a chamfered state. Also in the present embodiment, the suction table 32 may be a flat surface that supports the resin substrate 10, and the common suction table 32 can be used even when cutting products with different cutting positions. it can. In addition, the suction table 32 that supports the resin substrate 10 and the adhesive tape 16 that adheres to the resin substrate 10 are not cut with the cutting blade, and the wear of the cutting blade is prevented and the workability of the cutting process is improved as in the above embodiment. Can be improved.
[0022]
In the above embodiment, the resin substrate 10 in which the groove 30 is formed in advance on the surface opposite to the surface on which the semiconductor element 12 is mounted is used. However, as shown in FIG. 4, the resin substrate 10 in which the groove 30 is not provided. After mounting the semiconductor element 12, the groove portion 30 is provided in the resin substrate 10, and the resin substrate 10 can be cut by the cutting blade 40 to obtain a piece of semiconductor device.
FIG. 4A shows a state in which the semiconductor element 12 is mounted on one surface of the resin substrate 10, and no groove 30 is formed on the other surface of the resin substrate 10. FIG. 4B shows a state where one surface of the resin substrate 10 is resin-sealed with a sealing resin 14.
[0023]
In the present embodiment, after sealing one surface of the resin substrate 10, the groove 30 is formed on the other surface of the resin substrate 10 as shown in FIG. Of course, the groove part 30 is formed along the position where the resin substrate 10 is separated into individual pieces. The groove 30 is formed by router processing or the like.
FIG. 4D shows a state in which the resin substrate 10 on which the groove 30 is formed is supported by the suction table 32 and the resin substrate 10 is cut into individual pieces along the position of the groove 30 by the cutting blade 40. When cutting the resin substrate 10 with the cutting blade 40, the cutting edge of the cutting blade 40 moves in the gap surrounded by the groove 30 and the support surface of the suction table 32 as in the above-described embodiment. is there.
[0024]
Depending on the manufacturing process of the semiconductor device, it may be more efficient in terms of the processing process to perform the process of forming the groove 30 in the resin substrate 10 after the resin sealing process. For example, the router processing for processing the groove 30 and the processing for cutting the sealing resin 14 and the resin substrate 10 can be performed at the same processing site, and may be efficient in consideration of operations such as conveyance. In such a case, the method of the present embodiment can be applied. In the present embodiment, the groove portion 30 having a U-shaped cross section is formed on the resin substrate 10. However, the groove portion 30 may be formed in a V-shaped cross section as a matter of course .
[0025]
【The invention's effect】
According to the method for manufacturing a semiconductor device according to the present invention, as described above, the substrate is provided with a groove portion on the substrate and cut with the resin seal. The sealing resin and the resin substrate can be cut without cutting, and the wear of the cutting blade can be suppressed, the processing efficiency can be improved, and high-precision processing becomes possible. Furthermore, it exhibits remarkable effects, such as can be obtained good semiconductor device without causing burrs to disconnect unit.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram illustrating manufacturing steps of a first embodiment of a method for manufacturing a semiconductor device.
FIG. 2 is an explanatory view showing, in an enlarged manner, a method for cutting a resin substrate in the first embodiment.
FIG. 3 is an explanatory diagram illustrating a method for manufacturing a semiconductor device according to a second embodiment.
FIG. 4 is an explanatory view showing a method of manufacturing a semiconductor device by a method of forming a groove after resin sealing a resin substrate.
FIG. 5 is an explanatory view showing a method for manufacturing a semiconductor device using a substrate for multi-piece fabrication.
FIG. 6 is an explanatory view showing a method for manufacturing a semiconductor device by adhering an adhesive tape to a substrate.
FIG. 7 is an explanatory view showing a method for manufacturing a semiconductor device by supporting a substrate on a fixing jig;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Resin board | substrate 10a Circuit board 12 Semiconductor element 14 Sealing resin 16 Adhesive tape 18 Cutting part
2 0 fixture 22 groove 30 groove 32 adsorption table
40 cutting blade 50 semiconductor device

Claims (3)

半導体素子を搭載する素子搭載部が一方の面に形成された複数個の回路基板が一体に形成されると共に、他方の面側に各々の回路基板を区分する位置に合わせて溝部が形成された基板の各素子搭載部に半導体素子を搭載し、
該基板の半導体素子が搭載された一方の面側を封止樹脂により樹脂封止した後、
該樹脂封止された基板の他方の面を支持体に当接させて基板を支持し、
前記基板の樹脂封止された面側から、切断刃の刃先を、前記溝部に沿って支持体と前記溝部とにより囲まれた空隙内を該支持体から離間させて移動させ、前記封止樹脂及び基板を切断して個片の半導体装置を得ることを特徴とする半導体装置の製造方法。A plurality of circuit boards each having an element mounting portion for mounting a semiconductor element formed on one surface are integrally formed, and a groove is formed on the other surface side in accordance with a position for dividing each circuit board. A semiconductor element is mounted on each element mounting portion of the substrate,
After sealing one surface of the substrate on which the semiconductor element is mounted with a sealing resin,
Support the substrate by bringing the other surface of the resin-sealed substrate into contact with the support,
A resin sealed surface side of the substrate, the cutting edge of the cutting blade, the air gap enclosed by said a support groove along the groove is moved is separated from the support, the sealing resin And a method of manufacturing a semiconductor device, wherein the semiconductor device is obtained by cutting a substrate. 半導体素子を搭載する素子搭載部が一方の面に形成された複数個の回路基板が一体に形成された基板の各素子搭載部に半導体素子を搭載し、
該基板の半導体素子が搭載された一方の面側を封止樹脂により樹脂封止した後、
該樹脂封止された基板の他方の面側に、各々の回路基板を区分する位置に沿って溝部を形成し、
該溝部が形成された基板の他方の面を支持体に当接させて基板を支持し、
前記基板の樹脂封止された面側から、切断刃の刃先を、前記溝部に沿って支持体と前記溝部とにより囲まれた空隙内を該支持体から離間させて移動させ、前記封止樹脂及び基板を切断して個片の半導体装置を得ることを特徴とする半導体装置の製造方法。A semiconductor element is mounted on each element mounting portion of a substrate in which a plurality of circuit boards in which a device mounting portion for mounting a semiconductor element is formed on one surface is integrally formed,
After sealing one surface of the substrate on which the semiconductor element is mounted with a sealing resin,
On the other surface side of the resin-sealed substrate, a groove is formed along the position where each circuit board is separated,
Supporting the substrate by bringing the other surface of the substrate on which the groove is formed into contact with the support,
A resin sealed surface side of the substrate, the cutting edge of the cutting blade, the air gap enclosed by said a support groove along the groove is moved is separated from the support, the sealing resin And a method of manufacturing a semiconductor device, wherein the semiconductor device is obtained by cutting a substrate. 溝部の断面形状をＶ字形に形成することを特徴とする請求項１または２記載の半導体装置の製造方法。 3. The method of manufacturing a semiconductor device according to claim 1, wherein the groove has a V-shaped cross section .
JP30561399A 1999-10-27 1999-10-27 Manufacturing method of semiconductor device Expired - Fee Related JP3702998B2 (en)

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