JP3693858B2 - Current shunt built in semiconductor module - Google Patents

Current shunt built in semiconductor module Download PDF

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Publication number
JP3693858B2
JP3693858B2 JP20038799A JP20038799A JP3693858B2 JP 3693858 B2 JP3693858 B2 JP 3693858B2 JP 20038799 A JP20038799 A JP 20038799A JP 20038799 A JP20038799 A JP 20038799A JP 3693858 B2 JP3693858 B2 JP 3693858B2
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Japan
Prior art keywords
shunt
semiconductor module
fixed
metal substrate
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP20038799A
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Japanese (ja)
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JP2001028421A (en
Inventor
成治 田中
茂 岡本
秀久 橘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sansha Electric Manufacturing Co Ltd
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Sansha Electric Manufacturing Co Ltd
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Priority to JP20038799A priority Critical patent/JP3693858B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は，半導体モジュールの中に内蔵させて，半導体チップに流れる電流値を検出して制御するための分流器に関する。
【０００２】
【従来の技術】
絶縁板に固着された銅回路に，半導体チップを半田付けした後にエポキシ樹脂などの封止材でモールドされ構成される半導体モジュールがある。図２（ａ）に電力制御用の半導体モジュールのブロック図を示す。この図において半導体制御回路４１の通電電流が過大となった場合，一定電流以下にコントロールするための制御信号をつくりだして，該半導体制御回路４１に導くために，まず，分流器４２の，両端４４，４５の電位差を電流検出器４３に導き，その電位差を増幅して，制御信号発生器４０に導いて制御信号を作り，半導体チップによって電力制御するものである。上記のようなモジュールに内蔵されている分流器４２の構成を図２（ｂ）に示す。
【０００３】
絶縁板５０に固着された銅回路５１に分流器４２の両端４４，４５がはんだ付けされている。該分流器４２の両端に発生する電位差は分流器のもつ抵抗値によるものであるから，その温度上昇によって該抵抗値の変動が小さい銅・ニッケル合金のような金属等が分流器の材料として用いられている。半導体モジュールに内蔵される分流器は，電流１０Ａまでの小型のものでは，その発熱によって変化する抵抗値も許容されたが，大電流の使用に耐えるものが求められてきた。
【０００４】
【発明が解決しようとする課題】
大電流の流れる分流器は，放熱効果を高めるために，分流器全体の寸法を大きくして温度上昇を抑えてきた。この分流器を半導体モジュールに内蔵させるためには半導体モジュール全体寸法を抑える必要から分流器の占有する面積の極小化が課題であり，占有面積を小さく維持して放熱効果の高い分流器の実現と，分流器の抵抗値の精度向上が課題であった。
【０００５】
【課題を解決するための手段】
分流器の精度向上を阻害する要因として次のようなものがある。第１の要因は温度上昇による分流器の抵抗値変化であり，第２の要因は抵抗値の個体間バラツキであり，その製作精度によって発生していることが判明した。
【０００６】
第１の要因に対しては，熱伝導の効果を高めて，温度上昇を抑え，第２の要因に対しては，製作工程で微調整する。そこで，金属基板上に固着した熱伝導の良好な電気絶縁層上に設けられた銅回路の表面に，半導体チップ，電流検出器を構成する回路素子，および分流器を載置し固着して，封止材でモールドされた半導体モジュールの中に，内蔵される分流器においては，その両端が銅回路に固着され，下面が，熱伝導の良い電気絶縁物を介在させて金属基板上に密着し固定された金属片から成り，該金属片の上面の任意の２つの位置で，ワイヤボンディングされ電流検出器へ導出されるようにし，ワイヤボンディングと抵抗値の計測を連動させて位置決めを行う事によって，上記２つの要因に対応している。
【０００７】
【発明の実施の形態】
以下に，本発明による実施の形態を説明する。図１（ａ）は，本発明の要部の平面図，図１（ｂ）は要部の側面図である。１は銅・ニッケル合金などの金属片，２は金属基板，３は電気絶縁層，４は銅回路，５は半田付け部分，６は電流検出器へ導出されるボンディングワイヤ，Ｐ，Ｑは金属片１の上面にある任意の位置を示している。金属基板２に，電気絶縁層３を介して上記金属片１から成る分流器が，その両端で銅回路４に半田付けされている。該金属片１の下面は，熱伝導の良い金属基板２に，比較的良好な熱伝導性の，例えば窒化アルミニウムのような電気絶縁物７を介して密着させている。
【０００８】
上記金属片１の上面には，任意の２つの位置ＰとＱから電圧を電流検出器（図示せず）へ導出するためのボンディングワイヤ６が，その取付部Ｐ，Ｑの２点間の抵抗値を計測しつつ位置決めしてボンディングされる。このような構成の分流器は，半導体チップや電流検出器を構成する回路素子とともに，同一の銅回路４に半田付けされている。該分流器の抵抗値によって発生する熱は金属基板２へ伝えられて，その金属基板の放熱作用によって冷却される。
【０００９】
【発明の効果】
本発明によれば分流器において発生した熱が，密着している金属基板の広い表面の面積から放熱されるので，精度の阻害要因である温度上昇を抑えることができる。更に，製作工程の最終段階において，抵抗値を計測しつつ位置決めをし，ワイヤをボンディング出来る構成であるから，個体間バラツキを小さくするように微調整が出来る。加えて，特別仕様の電流値にも所望の抵抗値を個別対応できる利点もある。
【図面の簡単な説明】
【図１】 本発明による実施形態を示すブロック図。
【図２】 従来の分流器の構成と，それを内蔵する半導体モジュール全体の構成を示すブロック図。
【符号の説明】
１ 銅・ニッケル合金などの金属片
２ 金属基板
３ 電気絶縁層
４ 銅回路
５ 半田付け部分
６ 電流検出器へ導出されるボンディングワイヤ
７ 比較的良好な熱伝導性の電気絶縁物
Ｐ，Ｑ 金属片１の上面にある任意の位置[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a shunt for detecting and controlling the value of a current flowing in a semiconductor chip by being incorporated in a semiconductor module.
[0002]
[Prior art]
There is a semiconductor module configured by soldering a semiconductor chip to a copper circuit fixed to an insulating plate and then molding it with a sealing material such as epoxy resin. FIG. 2A shows a block diagram of a semiconductor module for power control. In this figure, when the energization current of the semiconductor control circuit 41 becomes excessive, in order to generate a control signal for controlling the current to be equal to or less than a constant current and to guide it to the semiconductor control circuit 41, first, both ends 44 of the shunt 42 are used. , 45 is led to the current detector 43, and the potential difference is amplified and led to the control signal generator 40 to generate a control signal, and the power is controlled by the semiconductor chip. FIG. 2B shows the configuration of the current divider 42 built in the module as described above.
[0003]
Both ends 44 and 45 of the shunt 42 are soldered to the copper circuit 51 fixed to the insulating plate 50. Since the potential difference generated at both ends of the shunt 42 is due to the resistance value of the shunt 42, a metal such as a copper / nickel alloy whose resistance value does not fluctuate as the temperature rises is used as the shunt material. It has been. The shunt built in the semiconductor module is small in size up to 10A, and the resistance value that changes due to heat generation is allowed, but a shunt that can withstand the use of a large current has been demanded.
[0004]
[Problems to be solved by the invention]
In order to enhance the heat dissipation effect, shunts with large current flow have been increased in size to reduce the temperature rise. In order to incorporate this shunt into the semiconductor module, it is necessary to minimize the area occupied by the shunt because it is necessary to reduce the overall size of the semiconductor module, and to realize a shunt with a high heat dissipation effect by keeping the occupied area small. Therefore, improving the resistance value of the shunt was an issue.
[0005]
[Means for Solving the Problems]
Factors that hinder the accuracy improvement of the shunt are as follows. The first factor is the change in the resistance value of the shunt due to the temperature rise, and the second factor is the variation in resistance value among individuals, and it has been found that this is caused by the manufacturing accuracy.
[0006]
For the first factor, the effect of heat conduction is increased to suppress the temperature rise, and for the second factor, fine adjustment is made in the manufacturing process. Therefore, the semiconductor chip, the circuit elements constituting the current detector, and the shunt are mounted and fixed on the surface of the copper circuit provided on the electrically insulating layer with good heat conduction fixed on the metal substrate. In a shunt that is built in a semiconductor module molded with a sealing material, both ends of the shunt are fixed to a copper circuit, and the bottom surface is in close contact with the metal substrate with an electrically insulating material having good thermal conductivity. It is composed of a fixed metal piece, and is wire-bonded and led to a current detector at any two positions on the upper surface of the metal piece, and positioning is performed by linking wire bonding and resistance measurement. , Corresponding to the above two factors.
[0007]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments according to the present invention will be described below. FIG. 1A is a plan view of the main part of the present invention, and FIG. 1B is a side view of the main part. 1 is a metal piece such as copper / nickel alloy, 2 is a metal substrate, 3 is an electrical insulation layer, 4 is a copper circuit, 5 is a soldering part, 6 is a bonding wire led out to a current detector, P and Q are metals An arbitrary position on the upper surface of the piece 1 is shown. A current divider made of the metal piece 1 is soldered to the copper circuit 4 at both ends of the metal substrate 2 via an electrical insulating layer 3. The lower surface of the metal piece 1 is in close contact with the metal substrate 2 having good heat conductivity through an electrical insulator 7 having relatively good heat conductivity, such as aluminum nitride.
[0008]
On the upper surface of the metal piece 1, a bonding wire 6 for deriving a voltage from an arbitrary two positions P and Q to a current detector (not shown) is a resistance between two points of the mounting portions P and Q. Positioning and bonding while measuring the value. The shunt having such a configuration is soldered to the same copper circuit 4 together with circuit elements constituting a semiconductor chip and a current detector. The heat generated by the resistance value of the shunt is transferred to the metal substrate 2 and cooled by the heat dissipation action of the metal substrate.
[0009]
【The invention's effect】
According to the present invention, the heat generated in the shunt is dissipated from the area of the wide surface of the metal substrate that is in close contact, so that the temperature rise, which is a factor that hinders accuracy, can be suppressed. Furthermore, in the final stage of the manufacturing process, positioning is performed while measuring the resistance value, and the wire can be bonded, so that fine adjustment can be made to reduce the variation between individuals. In addition, there is an advantage that a desired resistance value can be individually handled for a current value of a special specification.
[Brief description of the drawings]
FIG. 1 is a block diagram showing an embodiment according to the present invention.
FIG. 2 is a block diagram showing the configuration of a conventional shunt and the configuration of the entire semiconductor module incorporating it.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Metal piece, such as copper and nickel alloy 2 Metal substrate 3 Electrical insulation layer 4 Copper circuit 5 Soldering part 6 Bonding wire led out to current detector 7 Electrical insulators P and Q having relatively good thermal conductivity Metal pieces Any position on the top surface of 1

Claims (1)

金属基板に固着した熱伝導の良好な電気絶縁層上に設けられた銅回路の表面に半導体チップ，電流検出器を構成する回路素子，および分流器を載置し固着して封止材でモールドされた半導体モジュールの中に内蔵される分流器において，その両端が銅回路に固着され，下面が，熱伝導の良い電気絶縁物を介在させて，上記金属基板上に密着して固定された金属片から成り，該金属片の，上面の任意の２つの位置でワイヤボンディングされ電流検出器へ導出されるよう形成されたことを特徴とする半導体モジュール内蔵の分流器。A semiconductor chip, a circuit element constituting a current detector, and a shunt are mounted on the surface of a copper circuit provided on an electrically insulating layer having good heat conduction fixed to a metal substrate, and are fixed with a sealing material. In a shunt incorporated in a semiconductor module, both ends of the shunt are fixed to a copper circuit, and the bottom surface is a metal fixed in close contact with the metal substrate with an electrically insulating material having good thermal conductivity interposed therebetween. A shunt comprising a semiconductor module, wherein the shunt is formed by a wire bonding at any two positions on the upper surface of the metal piece and led out to a current detector.
JP20038799A 1999-07-14 1999-07-14 Current shunt built in semiconductor module Expired - Fee Related JP3693858B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20038799A JP3693858B2 (en) 1999-07-14 1999-07-14 Current shunt built in semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20038799A JP3693858B2 (en) 1999-07-14 1999-07-14 Current shunt built in semiconductor module

Publications (2)

Publication Number Publication Date
JP2001028421A JP2001028421A (en) 2001-01-30
JP3693858B2 true JP3693858B2 (en) 2005-09-14

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6131018B2 (en) * 2012-10-08 2017-05-17 株式会社デンソー Shunt resistor and mounting method thereof
JP2015184206A (en) * 2014-03-25 2015-10-22 Koa株式会社 Current detector

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