JP3692908B2 - 赤外線検出素子および測温計 - Google Patents
赤外線検出素子および測温計 Download PDFInfo
- Publication number
- JP3692908B2 JP3692908B2 JP2000169696A JP2000169696A JP3692908B2 JP 3692908 B2 JP3692908 B2 JP 3692908B2 JP 2000169696 A JP2000169696 A JP 2000169696A JP 2000169696 A JP2000169696 A JP 2000169696A JP 3692908 B2 JP3692908 B2 JP 3692908B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- thermopile
- infrared
- support region
- cold junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 92
- 238000001514 detection method Methods 0.000 claims description 91
- 239000000758 substrate Substances 0.000 claims description 75
- 238000009529 body temperature measurement Methods 0.000 claims description 39
- 239000004020 conductor Substances 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 239000006096 absorbing agent Substances 0.000 claims description 25
- 238000004891 communication Methods 0.000 claims description 20
- 210000003454 tympanic membrane Anatomy 0.000 claims description 14
- 238000005259 measurement Methods 0.000 description 66
- 230000035945 sensitivity Effects 0.000 description 25
- 238000000034 method Methods 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 239000010408 film Substances 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 230000001965 increasing effect Effects 0.000 description 22
- 230000036760 body temperature Effects 0.000 description 20
- 230000008859 change Effects 0.000 description 20
- 239000010409 thin film Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000009467 reduction Effects 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000013461 design Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 206010037660 Pyrexia Diseases 0.000 description 6
- 229910006367 Si—P Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 102100031250 Disks large-associated protein 1 Human genes 0.000 description 5
- 102100031245 Disks large-associated protein 2 Human genes 0.000 description 5
- 101150020562 Dlgap2 gene Proteins 0.000 description 5
- 101000731000 Homo sapiens Membrane-associated progesterone receptor component 1 Proteins 0.000 description 5
- 101100062430 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DAP2 gene Proteins 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Radiation Pyrometers (AREA)
- Measuring And Recording Apparatus For Diagnosis (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000169696A JP3692908B2 (ja) | 2000-06-06 | 2000-06-06 | 赤外線検出素子および測温計 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000169696A JP3692908B2 (ja) | 2000-06-06 | 2000-06-06 | 赤外線検出素子および測温計 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001349784A JP2001349784A (ja) | 2001-12-21 |
| JP2001349784A5 JP2001349784A5 (https=) | 2005-03-03 |
| JP3692908B2 true JP3692908B2 (ja) | 2005-09-07 |
Family
ID=18672519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000169696A Expired - Fee Related JP3692908B2 (ja) | 2000-06-06 | 2000-06-06 | 赤外線検出素子および測温計 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3692908B2 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011002143A1 (ko) * | 2009-07-02 | 2011-01-06 | 한국화학연구원 | 근적외선 감지 소자 및 그 제조방법 |
-
2000
- 2000-06-06 JP JP2000169696A patent/JP3692908B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011002143A1 (ko) * | 2009-07-02 | 2011-01-06 | 한국화학연구원 | 근적외선 감지 소자 및 그 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001349784A (ja) | 2001-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6565254B2 (en) | Infrared sensing element and temperature measuring device | |
| US6300554B1 (en) | Method of fabricating thermoelectric sensor and thermoelectric sensor device | |
| EP1333504B1 (en) | Monolithically-integrated infrared sensor | |
| US7385199B2 (en) | Microbolometer IR focal plane array (FPA) with in-situ mirco vacuum sensor and method of fabrication | |
| US7544942B2 (en) | Thermal detector for electromagnetic radiation and infrared detection device using such detectors | |
| KR100313909B1 (ko) | 적외선 센서 및 그 제조방법 | |
| WO2002075262A1 (en) | Infrared detection element and method for fabricating the same and equipment for measuring temperature | |
| US20050161605A1 (en) | Infrared gas sensor | |
| JP3733847B2 (ja) | 測温計 | |
| JP5564681B2 (ja) | 赤外線センサ | |
| JPH07209089A (ja) | 赤外線センサ | |
| US20200232853A1 (en) | Non-contact type infrared temperature sensor module | |
| JP3733839B2 (ja) | 赤外線検出素子および測温計 | |
| US20070227575A1 (en) | Thermopile element and infrared sensor by using the same | |
| JP3733838B2 (ja) | 赤外線検出素子および測温計 | |
| JP3692908B2 (ja) | 赤外線検出素子および測温計 | |
| JP2002048646A (ja) | 赤外線検出器および測温計 | |
| JP2771277B2 (ja) | 赤外線センサ | |
| JP2014048138A (ja) | 感光性ドライフイルムレジストを用いた多重層薄膜サーモパイルとこれを用いた放射温度計およびその多重層薄膜サーモパイルの製造方法 | |
| JP2003254824A (ja) | 赤外線センサ装置、非接触型測温計および非接触型体温計 | |
| JP3388207B2 (ja) | 熱電式センサデバイスおよびその製造方法 | |
| JP2002156279A (ja) | サーモパイル型赤外線センサ | |
| JP2002048637A (ja) | 赤外線検出器およびこれを備えた測温計 | |
| JP2001349784A5 (https=) | ||
| JPH0539467Y2 (https=) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040331 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040331 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050309 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050315 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050428 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20050531 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20050613 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090701 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100701 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110701 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110701 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120701 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120701 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130701 Year of fee payment: 8 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |