JP3668500B2 - Wiring disconnection correction method - Google Patents

Description

[0001]
[Industrial application fields]
The present invention relates to a method for correcting a disconnection of a wiring on a circuit wiring board of a liquid crystal display device or a semiconductor integrated circuit. In particular, the correction of the disconnection is easily performed in a state that is not different from a normal wiring having no disconnection. The present invention relates to a wiring breakage correction method suitable for correction and a wiring board using the same.
[0002]
[Prior art]
The wiring width of circuit wiring on a circuit wiring board typified by a liquid crystal display device and a semiconductor integrated circuit element becomes finer as display performance and integration degree improve. For this reason, wiring disconnection defects rapidly increase due to foreign matters generated in a series of circuit wiring forming processes such as resist coating-exposure-development-etching-resist stripping, which leads to the cost of the above products. It was a big factor that brought the rise.
[0003]
In order to solve the above disconnection failure of the wiring, conventionally, a method of locally depositing metal and connecting the disconnected portion has been adopted. Specifically, argon laser light is irradiated in an atmosphere of cobalt or platinum metal vapor, and a metal thin film is vapor-phase grown only on the laser irradiated portion (for example, Yamamoto, OPTRONICS No. 8 (1991) P. 81). ).
[0004]
As another method, there is a liquid phase method in which a solution containing an organic metal is brought into contact with the disconnected portion of the wiring and the metal is locally deposited by laser light irradiation. Specifically, a method in which a benzene solution containing an organic metal such as bisbenzene / chromium or bisbenzene / molybdenum is attached only to a predetermined position on the substrate, and a laser beam is irradiated to the attached portion through the substrate (for example, JP, 59-177358), or an organic solvent solution of manganese nitrate or ruthenium metal compound is brought into contact with the disconnection portion of the wiring, and laser light is irradiated in the vicinity of the disconnection defect, so that the metal contained in the solution is precipitated. There is a method (for example, Japanese Patent Laid-Open No. 2-19838) for connecting them.
[0005]
[Problems to be solved by the invention]
However, in the method of vapor-depositing a metal thin film only on the laser irradiated portion, a metal thin film having a low resistivity (20 to 50 μΩ · cm) can be obtained, but the vapor pressure of the metal is low. A device such as a gas phase reaction tank is required, which requires a huge equipment cost.
[0006]
In addition, in the above-described method of locally depositing metal by laser light irradiation, precipitates generated in the process of thermal decomposition reaction by laser light irradiation are generally metal oxides (for example, chromium dioxide, molybdenum dioxide, manganese dioxide). In many cases, the resistance value of the portion connected using these is several tens to several hundreds times the original wiring resistance. Therefore, it must be said that it is unsuitable for correcting a liquid crystal display device or a semiconductor integrated circuit (in the case of aluminum, the wiring resistance is approximately 0.1 to 1 kΩ) that can be an actual product.
[0007]
In addition, when a metal is precipitated from an organic solvent solution in which a metal salt is dissolved, the precipitate is often an aggregate of metal oxide particles, and it is difficult to say a low-resistance metal thin film because of its structure. Had.
[0008]
In view of the above-described problems of the prior art, the present invention provides a method for correcting a disconnection of a wiring that can easily and reliably correct a disconnection in a state that is not different from a normal wiring that does not have the disconnection. An object is to provide a wiring board using the same.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, the wire breakage correcting method of the present invention is a method of directly spraying a solution containing a metal complex composed of palladium trifluoroacetate or palladium pentafluoropropionate onto a wire breakage portion of the wire, and coating the film. By irradiating the applied solution with laser light, a continuous metal thin film mainly composed of palladium is deposited on the disconnected portion of the wiring, and the disconnected portion of the wiring is connected and corrected with the continuous metal thin film. It is the method that was made .
[0011]
On the other hand, in the wiring board of the present invention, a solution containing a metal complex composed of palladium trifluoroacetate or palladium pentafluoropropionate is directly sprayed on the wiring disconnection portion and applied in a film form, and laser light is applied to the applied solution. By irradiating, a continuous thin film of a metal containing palladium as a main component is deposited on the disconnection portion of the wiring to correct the connection of the wiring disconnection portion.
[0013]
[Action]
By adopting the above configuration, a solution in which a metal complex composed of, for example, palladium trifluoroacetate or palladium pentafluoropropionate is dissolved in a solvent such as acetonitrile, toluene, alcohol or the like is applied in a film shape to the disconnected portion of the wiring. is irradiated with argon laser beam in a coating solution corresponding to the disconnected portion, the portion irradiated with the laser beam is locally heated, and at the same time a high alcoholic solvent volatility evaporates, the metal complex is decomposed, the palladium main It becomes a continuous thin film of metal as a component, and is deposited on the broken portion.
[0014]
Since the portion not irradiated with the laser beam is not heated, the decomposition of the metal complex → the deposition of the metal does not proceed, and the electrically non-conductive state is maintained.
[0015]
Even if the metal complex solution has a temperature of about room temperature, the metal complex solution gradually decomposes in the long term → exhibits a metal deposition reaction, and electrically changes from a non-conductive state to a conductive state. The unnecessary metal complex that is not irradiated with laser light is removed with a solvent such as acetonitrile, toluene, or alcohol.
[0016]
However, the removal of the excess complex solution after the deposition of the metal thin film described above is unnecessary if the area to be applied to the disconnected portion or in the form of a film is smaller than the laser light irradiation area. Specifically, the metal complex solution is injected into a microsyringe or capillary whose tip diameter is narrowed to 1 to 2 μm, and the metal complex solution is ejected to a predetermined wire disconnection portion, so that it is only in a region that is about the same as the wiring width. The metal complex solution can be applied in contact or film form. If the irradiation area of the laser light is made larger than this, the part where the metal complex solution is contacted or applied in the form of a film changes to a metal thin film, and the work for removing the unnecessary metal complex after that is unnecessary. Become.
[0017]
【Example】
A first embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is a schematic explanatory diagram of a method for correcting a disconnection of wiring, FIG. 2 is a diagram showing a correction process flow of a wiring board having a disconnection portion, and FIG. 3 is a diagram showing a relationship between a resistance value of the disconnection correction portion and a laser beam irradiation output It is. In this example, the metal complex is palladium trifluoroacetate.
[0018]
1 and 2, 1 is a stage, 2 is a wiring board, 3 is a metal complex solution, 4 is an injector of the metal complex solution 3, 5 is a laser light source body, 11 is an Al wiring, and 12 is a disconnected portion of the Al wiring 11. It is. First, as shown in FIG. 1, a metal complex solution 3 in which 20 wt% of palladium trifluoroacetate is dissolved in an acetonitrile solution is converted into a wiring board 2 (wiring) shown in FIG. 2A by an injector 4 of the metal complex solution 3. A predetermined amount is applied to the disconnection portion 12 (length: about 10 μm) having a width of 10 μm and a wiring thickness of 0.2 μm. In this case, the coating amount is adjusted by the concentration of the metal complex solution 3, the injection amount, the size of the disconnection portion 12, etc., but in this embodiment, the metal complex solution 3 is a region having a diameter of 50 μm by 1 × 10 to ¹² l. It was applied to.
[0019]
Next, Ar laser light is condensed and irradiated from the laser light source main body 5 to the area of the disconnection part 12 to be corrected of the application part of the metal complex solution 3 shown in FIG. Here, the output of the Ar laser light is adjusted in consideration of the coating amount, the irradiation area, and the like of the metal complex solution 3 applied to the disconnected portion 12. In this example, Ar laser light emitted from the laser light source body 5 is reduced and projected using a 40 × objective lens and applied to a 10 μm × 40 μm region of the metal complex solution 3 applied to the disconnected portion 12 for 1 to 10 seconds. Continuous irradiation. In this case, the irradiation intensity of Ar laser light is about 1 × 10 ⁴ W / cm ² on the substrate surface. The Ar laser light has no problem even if it is pulsed irradiation as long as it has the same level of laser light energy as in continuous irradiation.
[0020]
The coating film of the metal complex solution 3 in the portion irradiated with the Ar laser light is heated to a state shown in FIG. 2C, and the acetonitrile solution as the solvent of the metal complex solution 3 evaporates, and the metal complex The palladium thin film 13 is deposited. The thickness of the palladium thin film 13 deposited at this time is reduced by about 30% as compared with the thickness of the coating film before irradiation with Ar laser light (after drying). The application amount is adjusted.
[0021]
On the other hand, the portion of the metal complex coated film that is not irradiated with Ar laser light is not heated, so that the thermal decomposition of the metal complex does not proceed, and the portion of the metal complex coated film maintains a non-conductive state. However, even if the Ar laser beam non-irradiated part is at room temperature, the decomposition of the metal complex → the metal precipitation proceeds gradually over a long period of time, so this part can be removed as necessary. Is done. For the removal, the aforementioned solvent such as acetonitrile, toluene, alcohol, etc., which is the solvent of the metal complex, is sufficient.
[0022]
When the palladium thin film 13 is formed on the disconnection portion 12 of the Al wiring 11 and corrected as described above, the relationship between the electrical resistance at both ends of the correction portion Al wiring and the irradiation output of Ar laser light is as shown in FIG. become. As is apparent from FIG. 3, the resistance value is large when the irradiation power of Ar laser light is low, but when the irradiation power is about 1 × 10 ⁴ W / cm ² , the resistance value of the disconnection correction portion. Is 20 Ω to 50 Ω including the contact resistance between the Al wiring 11 and the palladium thin film 13, and it can be seen that the disconnected portion 12 is surely corrected.
[0023]
Moreover, as a result of observing the surface and cross section of the above-mentioned breakage correction portion with an optical microscope or an electron microscope, it was found that the breakage correction portion was a continuous palladium film and not an aggregate of palladium particles.
[0024]
The metal complex in the present experimental example has dealt with the case of trifluoroacetic acid palladium, pentafluoropropionic acid palladium similar results as in the case of trifluoroacetic acid palladium as described above be used is obtained.
[0025]
Next, a second embodiment of the present invention will be described with reference to FIG.
4A is a plan view showing a part of a TFT (Thin Film Transistor) of the liquid crystal display device, and FIG. 4B is an enlarged cross-sectional view taken along the line AA ′ of FIG. 4A.
[0026]
In FIG. 4, 6a is a normal signal Al wiring that does not require correction, 6b is a signal Al wiring that has a disconnection and needs to be corrected, 7 is a pixel electrode, 8 is a TFT, and 9 is a disconnection of the signal Al wiring 6b. Reference numeral 10 denotes a metal thin film.
[0027]
The process of applying the metal complex solution 3 to the disconnection portion 9, irradiating the formed coating film with Ar laser light, and precipitating the metal thin film 10 by the thermal reaction of the metal complex is the same as in the first embodiment. Implemented by process. After the disconnection portion 9 is corrected with the metal thin film 10, a protective film such as SiN or SiO ₂ is formed using ordinary CVD (Chemical Vavor Deposition), and a liquid crystal display device is completed by combining a liquid crystal and a color filter.
[0028]
When the liquid crystal display device is driven by a normal method, the TFT 8 connected to the signal Al wiring 6b having the modified disconnection 9 is not connected to the adjacent signal Al wiring 6a. The operation state was exactly the same as that of the TFT connected to. This indicates that the defective portion that has been treated as a line defect in the conventional liquid crystal display device has been reliably repaired.
[0029]
The signal Al wiring 6b to be corrected may be a source line other than the drain line of the liquid crystal display device, or may be a gate line. Furthermore, it goes without saying that it may be a signal wiring of a device having a metal wiring such as a signal wiring of a semiconductor integrated circuit or a circuit wiring of a printed board.
[0030]
Thus, by using the above-described disconnection correction method, it is possible to correct the disconnection portion of the wiring board of the liquid crystal display device or the semiconductor integrated circuit element so that it is not different from the normal signal wiring not having the disconnection portion. In addition, the present invention can be applied to correction of disconnection of a photomask or repairing a white spot defect caused by color loss of a color filter as a black spot defect.
[0031]
【The invention's effect】
As described above, the method for correcting a disconnection of a wiring according to the present invention makes it easy to correct a disconnection in a circuit wiring board of a liquid crystal display device or a semiconductor integrated circuit in a state that is not different from a normal wiring that does not have the disconnection. And it becomes possible to correct it reliably.
[0032]
And the circuit wiring board which repaired the disconnection part of wiring using the disconnection correcting method of the present invention can restore the product value, improve the product yield, and further contribute to the reduction of the product cost. .
[Brief description of the drawings]
FIG. 1 is a schematic explanatory diagram of a wiring breakage correcting method according to a first embodiment of the present invention.
FIG. 2 is a diagram showing a process flow for correcting a wiring board having a disconnection portion.
FIG. 3 is a diagram showing a relationship between a resistance value of a disconnection correcting unit and a laser beam irradiation output.
FIG. 4 is a diagram showing a part of a liquid crystal display device according to a second embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Stage, 2 ... Wiring board, 3 ... Metal complex solution, 4 ... Metal complex solution ejector, 5 ... Laser light source body, 6a, 6b, 11 ... Signal Al wiring, 7 ... Pixel electrode, 8 ... TFT, 9, 12 ... Disconnected portion of signal wiring, 10, 13 ... Metal thin film.

Claims (5)

A solution containing a metal complex composed of palladium trifluoroacetate or palladium pentafluoropropionate is directly ejected to the disconnection portion of the wiring using a capillary so that the solution is formed into a film shape only in a region approximately equal to the width of the wiring. By applying and applying laser light to the applied solution, the metal complex is thermally decomposed to deposit a continuous metal thin film mainly composed of palladium on the disconnection portion of the wiring, thereby disconnecting the wiring. A method for correcting the disconnection of wiring , comprising correcting the connection with a continuous thin film of the metal . The wiring is aluminum, and the irradiation output of the laser beam is about 1 × 10 ⁴ W / cm ² The wire breakage correcting method according to claim 1, which is as described above. A method for correcting a disconnection of a signal wiring on a wiring substrate for a liquid crystal display device, wherein a solution containing a metal complex composed of palladium trifluoroacetate or palladium pentafluoropropionate is used with a capillary The solution is applied in the form of a film only to a region approximately equal to the width of the wiring by directly ejecting it to the disconnected portion of the wiring, and the metal complex is heated by irradiating the applied solution with laser light. A wiring substrate for a liquid crystal display device, comprising: disassembling and depositing a continuous metal thin film mainly composed of palladium on the disconnected portion of the wiring, and correcting the connection of the disconnected portion of the wiring with the continuous thin film of metal . How to correct disconnection of signal wiring. 4. The liquid crystal display according to claim 3, wherein a protective film is formed on the signal wiring including the metal continuous thin film after correcting the disconnection of the signal wiring with the metal continuous thin film. A method for correcting disconnection of signal wiring on a wiring board for apparatus. The wiring is aluminum, and the irradiation output of the laser beam is about 1 × 10 ⁴ W / cm ² 4. The method for correcting a disconnection of a signal wiring of a wiring substrate for a liquid crystal display device according to claim 3, wherein the method is as described above.

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