JP3660444B2 - Resin package type semiconductor device and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a resin package type semiconductor device in which a semiconductor chip is resin-packaged, and a method for manufacturing the same.
[0002]
[Prior art]
As shown in FIG. 5, a conventional resin package type semiconductor device 2 of this type has a semiconductor chip 3 mounted on a die pad 20 and a bonding pad 30 formed on the semiconductor chip 3 via wires 25. A plurality of internal leads 24 that are electrically connected to each other, a resin package 23 that encloses the semiconductor chip 3 to each internal lead 24, and the outside of the resin package 23 continuously to each internal lead 24. And a plurality of external leads 26 extending.
[0003]
As shown in FIG. 6, the resin package type semiconductor device 2 has the semiconductor chip 3 mounted on the upper surface of the die pad 20 formed on the manufacturing frame 1, and the bonding pad 30 formed on the semiconductor chip 3 is mounted. A molding die apparatus comprising upper and lower cavity blocks 31 and 32 having cavities capable of accommodating and arranging the semiconductor chip 3 on the die pad 20 in a combined state, connected to corresponding internal leads 24 via wires 25. The die pad 20, the semiconductor chip 3, the internal lead 24, and the wire bonding portion are formed by resin packaging using a resin material.
[0004]
In the resin packaging step, a runner (not shown) is formed from the gate 35 formed in either the upper or lower cavity block 31 or 32 in the cavity formed by the combined state of the upper or lower cavity block 31 or 32 described above. It is carried out by injecting a resin material supplied through the resin.
[0005]
[Problems to be solved by the invention]
As shown in FIG. 7, the resin material injected from the gate 35 into the upper space 33 defined by the upper cavity block 31 is between the tip of the internal lead 24 and the peripheral edge of the die pad 20. From the formed gap 27, it flows into the lower space 34 defined by the lower cavity block 32 and is injected. However, heat is normally applied to each of the above-described cavity blocks 31 and 32 by a heater or the like before the resin material is injected in a clamped state. Therefore, when the resin package is formed using the manufacturing frame 1 having a structure as shown in FIG. 6 in which the gap 27 and the die pad 20 are formed relatively long, the injected resin material is The resin material starts to be hardened by the heat applied to each of the cavity blocks 31 and 32 before reaching the central portion on the back surface side of the die pad 20. Since the resin material that has started to cure in this manner has high viscosity and lacks fluidity, it is difficult for the resin material to advance into the central portion on the back side of the die pad 20. In addition, the resin material that has advanced to the center part on the back side of the die pad 20 cannot be familiar with each other because the surface has begun to harden. Will leave wrinkled joints.
[0006]
Further, since the die pad 20 is formed of a metal such as iron, the difference in thermal expansion coefficient from the resin material is large, and when the heating and cooling are repeated, the die pad 20 and the resin package 23 are repeated. The joint portion is easily peeled off due to the difference in thermal expansion coefficient, and cracking is likely to occur, leading to a deterioration in the quality of the semiconductor device 2.
[0007]
The present invention has been conceived under the circumstances described above, and is a resin package semiconductor capable of avoiding deterioration in quality even when heating and cooling are repeated. It is an object of the present invention to provide a method for manufacturing a resin package type semiconductor device capable of effectively injecting a resin material into the back side of a die pad while providing an apparatus.
[0008]
DISCLOSURE OF THE INVENTION
In order to solve the above problems, the present invention takes the following technical means.
[0009]
That is, the resin package type semiconductor device according to the first aspect of the present invention is electrically connected to a semiconductor chip mounted on a rectangular die pad and a bonding pad on the semiconductor chip via a wire. A plurality of internal leads, a resin package enclosing the semiconductor chip or the internal leads, and a plurality of external leads extending to the outside of the resin package continuously to the internal leads. In the package type semiconductor device, the die pad has a plurality of through-holes having a long axis in a direction along a diagonal of the die pad, and are formed only at the four corners of the die pad, avoiding the central portion of the die pad. the semiconductor chip is, with respect to the die pad, a part from the four corners of the semiconductor chip of each of the through-holes protruding It is characterized in that it is mounted so.
[0011]
In such a resin package type semiconductor device, a through hole is formed at a position where at least a part thereof protrudes from the mounting position of the semiconductor chip in a plan view in a state where the semiconductor chip is mounted on the die pad. Therefore, in the case where resin packaging is performed using a molding die device having upper and lower cavity blocks having cavities capable of accommodating and arranging semiconductor chips mounted on the die pad in the assembled state, the through hole is as described above. The upper and lower spaces defined by the upper and lower cavity blocks communicate with each other.
[0012]
Therefore, the resin material injected into the upper space defined by the upper cavity block is not only from the gap formed between the tip of the internal lead and the peripheral edge of the die pad, but also from the through hole. It is injected into the lower space defined by the lower cavity block. That is, the resin material can be efficiently advanced from the portion near the center of the die pad to the back side of the die pad, and the resin packaging of the semiconductor chip or the like is completed at the stage where the resin material is not hardened. Even if the resin material is completely cured, wrinkles are not generated in the resin package.
[0013]
In addition, since the resin package type semiconductor device uses a die pad in which a through hole as described above is formed, the contact area between the die pad and the resin material can be reduced. Since a part of the upper and lower parts separated is cross-linked by the resin material, peeling of the joint portion between the die pad and the resin material due to thermal expansion between the die pad and the resin material at the time of temperature rise and cooling , Cracking is less likely to occur. Therefore, by forming a through hole in the die pad, it is possible to avoid the quality of the resin package type semiconductor device from being deteriorated even when the temperature rise and cooling are repeated.
[0014]
According to a second aspect of the present invention, there is provided a resin package type semiconductor device manufacturing method comprising: a rectangular die pad in which a plurality of through holes having long axes in a direction along a diagonal line are formed only at four corners avoiding a central portion ; A method of manufacturing a resin package type semiconductor device using a lead frame having a plurality of internal leads with tip portions arranged around the die pad, wherein a part of each through hole is a semiconductor on the die pad. Bonding the semiconductor chip so as to protrude from the four corners of the chip, connecting the bonding pad on the semiconductor chip and the corresponding internal lead by wire bonding, the die pad, the semiconductor chip, and the internal lead And forming a resin package that wraps around the wire bonding portion. It is characterized in.
[0015]
Preferably, the step of forming the resin package further includes upper and lower cavity blocks having cavities in which the semiconductor chips mounted on the die pad can be accommodated and arranged in a combined state, and these cavity blocks are provided via runners. Using a molding die device provided with a gate for injecting the resin material to be supplied into the cavity, at least one of the through holes of the die pad is positioned on the extension line of the gate.
[0016]
According to such a method for manufacturing a resin package type semiconductor device, a resin package type semiconductor device having the above-described effects can be provided. Further, since a die pad having a through hole formed on the extension line of the gate, that is, on the flow direction of the injected resin material, the resin material can be effectively advanced to the back side of the die pad. .
[0017]
Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.
[0019]
FIG. 1 is a cross-sectional view of a resin package semiconductor device 4 according to the present invention, and FIG. 2 is a plan view of a manufacturing frame 4A used when the resin package semiconductor device 4 is manufactured. These are principal part top views which show an example of the intermediate product of the said resin package type semiconductor device 4, and FIG. 4 is principal part sectional drawing of the state which mounted | wore the said intermediate product with the molding die apparatus.
[0020]
As shown in FIGS. 1 and 3, the resin package type semiconductor device 4 includes a die pad 44 formed in a rectangular shape, a semiconductor chip 6 having a bonding pad 60 formed on the upper surface, and an electrical connection between the semiconductor chip 6 and the semiconductor chip 6. And a plurality of internal leads 40 that are electrically connected to each other.
[0021]
2 and 3, the die pad 44 has two oval through holes 42, 42, 42, 42 in total, that is, two on each diagonal line.
[0022]
As shown in FIG. 1, the semiconductor chip 6 is mounted on the die pad 44. As shown in FIG. 3, the through-holes 42, 42, 42, 42 are formed in a plan view in this state. A part thereof is formed at a position protruding from the semiconductor chip 6. The bonding pad 60 formed on the upper surface of the semiconductor chip 6 is connected so as to be electrically connected to the corresponding internal lead 40 by the wire 5.
[0023]
Further, the die pad 44, the semiconductor chip 6, the internal lead 40, and the wire 5 are resin packaged by a thermosetting resin such as epoxy resin, and extend integrally from the side surface of the resin package 7 to the internal lead 40. An external lead 41 is formed.
[0024]
A horizontal portion 41 ′ is formed at the tip of the external lead 41 so as to be substantially flush with the bottom surface of the resin package type semiconductor device 4. By soldering the horizontal portion 41 ′, the resin package is formed. The type semiconductor device 4 is configured to be surface-mounted on a circuit board.
[0025]
Next, a method for manufacturing the resin package type semiconductor device 4 configured as described above will be described with reference to FIGS.
[0026]
FIG. 2 shows a configuration of a manufacturing frame 4A used for manufacturing the resin package type semiconductor device 4. The manufacturing frame 4A includes a side frame 45 on both sides in the width direction and a short diameter region 47 surrounded by a cross frame 46 formed so as to span between the side frames 45, 45 at equal intervals in the longitudinal direction. Leads 40 and 41 or die pads 44 to be components of the resin package type semiconductor device 4 are formed by punching. An elliptical through hole 42 is formed on the diagonal line of the die pad 44. A quadrilateral frame-shaped diver 48 is formed such that its four corners are connected to the side frame 45 and the cross frame 46 by support leads 49. A rectangular die pad 44 is supported by suspension leads 50 extending inward from the four corners of the quadrilateral frame-shaped diver 48. Each trapezoidal area in the quadrilateral frame-shaped diver 48 defined by the adjacent suspension leads 50, 50 is connected to the base end of the diver 48 and has a plurality of internal leads 40 extending toward one side of the die pad 44. Is formed. On the outside of the diver 48, a plurality of external leads 41 extending continuously from the internal leads 40 are formed. The outer end portion of each external lead 41 is connected to the side frame 45 or the cross frame 46 via the support lead 51. As can be seen from FIG. 3, each internal lead 40 is generally formed in a direction extending radially from the center of the die pad 44.
[0027]
As shown in FIG. 3, first, the semiconductor chip 6 is bonded to the upper surface of the die pad 44 of the manufacturing frame 4A formed in this way so that a part of the through hole 42 protrudes in a plan view. The bonding pad 60 formed on the upper surface of the semiconductor chip 6 and the upper surface of the tip of the corresponding internal lead 40 are connected by the wire 5 so as to be electrically conductive.
[0028]
As shown in FIG. 4, the upper and lower cavity blocks 70, 71 are sandwiched between upper and lower cavity blocks 70, 71 that form cavities in which the die pad 44 and the semiconductor chip 6 can be accommodated. The semiconductor chip 6 is accommodated in the cavity space formed by 71. Then, the upper and lower cavity blocks 70 and 71 are clamped.
[0029]
Note that gates 72 for supplying a resin material into the cavity space through runners are formed at the corner portions of the upper and lower cavity blocks 70 and 71 described above. Accordingly, the through holes 42 formed on the diagonal line of the die pad 44 are located on the extension line of the gate, that is, on the flow direction of the resin material to be supplied. Further, the through-hole 42 is formed in the die pad 44 so as to partially protrude from the semiconductor chip 6 in a plan view with the semiconductor chip 6 mounted thereon. The upper space 70 ′ and the lower space 71 ′ defined by the lower cavity block 71 are configured to communicate with each other through the through hole 42. The upper and lower cavity blocks 70 and 71 that have been clamped are heated by a heater or the like before the resin material is injected.
[0030]
Next, a thermosetting resin such as an epoxy resin is injected into the cavity space from the gate 72 through the runner, and the injected resin is cured by the heat applied to the cavity blocks 70 and 71.
[0031]
At this time, the resin material injected from the gate 72 flows into the upper space 70 ′ as shown by an arrow in FIG. 4, and between the tip of the internal lead 40 and the peripheral edge of the die pad 44. Not only from the formed gap 43 but also from the through hole 42, it flows into the lower space 71 ′ and is injected. That is, the resin material can be supplied into the lower space 71 ′ more efficiently than in the prior art, and the resin material can be filled into the cavity space faster. Further, since the resin material can be supplied into the lower space 71 ′ from a portion closer to the center of the die pad 44 by forming the through hole 42, the resin material is provided on the back surface side of the die pad 44. Can be advanced efficiently and filled with resin material. Therefore, the packaging of the semiconductor chip 6 or the like by the resin material can be finished at the stage where the injected resin material is not hardened, and wrinkles are generated in the resin package 7 of the manufactured resin package type semiconductor device 4. Can be avoided.
[0032]
Further, since the resin package type semiconductor device 4 formed in this way uses the die pad 44 in which the through hole 42 is formed as described above, the contact area between the die pad 44 and the resin package 7 is used. And the upper and lower portions delimited by the die pad 44 are cross-linked by the resin material. Therefore, the above-mentioned difference due to the difference in thermal expansion between the die pad 44 and the resin package 7 at the time of heating and cooling. Separation and cracking of the joint between the die pad and the resin package 7 are less likely to occur. Therefore, by forming the through-hole 42 in the die pad 44, it is possible to avoid deterioration of the quality of the resin package type semiconductor device 4 even when the temperature rise and cooling are repeated. .
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a resin package type semiconductor device according to the present invention.
FIG. 2 is a plan view of a manufacturing frame used in manufacturing the resin package type semiconductor device.
FIG. 3 is a plan view of an essential part showing an example of an intermediate product of the resin package type semiconductor device.
FIG. 4 is a cross-sectional view of a main part in a state where a molding die is attached to the intermediate product.
FIG. 5 is an explanatory diagram of a conventional example.
FIG. 6 is an explanatory diagram of a conventional example.
FIG. 7 is an explanatory diagram of a conventional example.
[Explanation of symbols]
4 Resin Package Type Semiconductor Device 5 Wire 6 Semiconductor Chip 40 Internal Lead 41 External Lead 42 Through Hole (Die Pad)
43 Gap (formed at the tip of the inner frame and the peripheral edge of the die pad)
44 Die pad 60 Bonding pad 70 Cavity block (upper side)
71 Cavity block (lower side)
72 gate

Claims (3)

A semiconductor chip mounted on a rectangular die pad, a plurality of internal leads electrically connected to bonding pads on the semiconductor chip via wires, and the semiconductor chip or each internal lead. A resin package type semiconductor device comprising: an encapsulating resin package; and a plurality of external leads extending to the outside of the resin package in succession to the internal leads,
In the die pad, a plurality of through holes having a long axis in a direction along the diagonal of the die pad are formed only at the four corners of the die pad, avoiding the center of the die pad ,
The resin package type semiconductor device , wherein the semiconductor chip is mounted on the die pad so that a part of each through hole protrudes from the four corners of the semiconductor chip . A rectangular die pad in which a plurality of through-holes having major axes in the direction along the diagonal line are formed only at the four corners avoiding the central portion, and a plurality of internal leads having tip portions arranged around the die pad. A method of manufacturing a resin package type semiconductor device using a lead frame comprising:
Bonding the semiconductor chip such that a part of each through hole protrudes from the four corners of the semiconductor chip on the die pad;
Connecting the bonding pads on the semiconductor chip and the corresponding internal leads by wire bonding;
Forming a resin package that encloses the die pad, semiconductor chip, internal lead, and wire bonding portion;
A method for manufacturing a resin package type semiconductor device, comprising: The step of forming the resin package includes upper and lower cavity blocks having cavities that can accommodate and arrange the semiconductor chips mounted on the die pad in a combined state, and the resin supplied through the runners to these cavity blocks The method according to claim 2 , wherein a molding die apparatus provided with a gate for injecting material into the cavity is used and at least one of the through holes of the die pad is positioned on an extension line of the gate. Manufacturing method of resin package type semiconductor device.

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