JP3645731B2 - High frequency power amplifier and radio communication device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a radio frequency power amplifying apparatus (high frequency power amplifier module: PA module) having a plurality of amplifying systems such as a multiband communication system and a multimode communication system, and a radio such as a mobile communication device incorporating the high frequency power amplifying apparatus. Related to communication equipment.
[0002]
[Prior art]
A high-frequency power amplifier is used in a transmission unit of a mobile communication device such as an automobile phone or a mobile phone.
[0003]
Multiband communication systems and multimode communication systems are known as systems that enable calls between mobile phones (cellular phones) having different communication systems. One of the multiband communication systems is a dual band system. The dual band system is described in, for example, “Hitachi Review”, published by Hitachi Critics, Vol. 80, No. 11 (1998), P47 to P52. This document describes a dual-band method and dual-band high-frequency power based on GSM (Global System for Mobile Communications) with a carrier frequency band of 880 to 915 MHz and DCS-1800 (Digital Cellular System 1800) with a carrier frequency band of 1710 to 1785 MHz. An amplifier (RF module: PA module) is described. This document also describes a triple mode system as a multifunction machine.
[0004]
Japanese Patent Application No. 9-353438 discloses a multi-band mobile communication apparatus that can be used in a mobile phone system such as PCN (Personal Communications Network: DCS-1800), PCS (Personal Communications Servis: DCS-1900), and GSM. Is disclosed.
[0005]
[Problems to be solved by the invention]
In a dual-band high-frequency power amplification module, in a composite chip that monolithically integrates two or more transistors (amplifiers) into a single semiconductor chip, the multi-stage amplifier has 1, 2, 1, 2, 3, etc. It was found that when amplifiers are arranged side by side, crosstalk occurs between groups of wires connected to the electrodes of adjacent transistors, a feedback loop is generated, and abnormal oscillation is likely to occur.
[0006]
12 (a) and 12 (b) show the arrangement configuration of a transistor (amplifier) of a dual-band high-frequency power amplifier (dual-band PA module) 1 studied prior to the present invention and a semiconductor chip incorporating the transistor. It is a schematic diagram shown. In this configuration, the first high-frequency power amplification system 2 and the second high-frequency power amplification system 3 are provided, and each amplification system sequentially connects the first stage (first stage), the second stage, the last stage (three stages) and the transistors. It has a configuration.
[0007]
In the first high-frequency power amplification system 2, the first stage transistor Q1 and the second stage transistor Q2 are monolithically formed adjacent to each other in the composite chip 10, and the third stage transistor Q3 is formed on a single semiconductor chip 11. . In the second high frequency power amplification system 3, the first stage transistor Q4 and the second stage transistor Q5 are monolithically formed adjacent to each other in the composite chip 12, and the third stage transistor Q6 is formed on a single semiconductor chip 13. ing.
[0008]
In the first high-frequency power amplification system 2, a signal is input from the Pin1 terminal and a signal is output from the Pout1 terminal. In the second high-frequency power amplification system 3, a signal is input from the Pin2 terminal and a signal is output from the Pout2 terminal.
[0009]
FIG. 12B shows the electrode arrangement of the composite chip 12 incorporating the first stage transistor Q4 and the second stage transistor Q5, and the connection of the wires 16 that electrically connect these electrodes 14 and the wire connection pads 15 of the wiring board. It is a schematic diagram which shows a state. The electrode 14 is arranged along the edge of the composite chip 12 and constitutes the gate (G) electrode or the drain (D) electrode of the first stage transistor Q4 and the second stage transistor Q5. As shown in the figure, the electrodes 14 are shown as squares, and the wire connection pads 15 are provided in parallel to the electrode 14 rows. The electrode 14 and the wire connection pad 15 are electrically connected by a conductive wire 16.
[0010]
In such a structure, each wire group of the transistor Q4 and the transistor Q5 extends side by side, so that when the second high-frequency power amplification system 3 operates, the first-stage input of the first-stage transistor Q4 and the second-stage input A parasitic capacitance Cf is generated between the second stage output of the transistor Q5 and crosstalk occurs, and abnormal oscillation (noise) is likely to occur. This oscillation is also likely to occur between the transistor Q1 and the transistor Q2 in the operation of the first high-frequency power amplification system 2 as well.
[0011]
In the case of a multi-band configuration or a multi-mode configuration in which a plurality of amplification systems are provided, the present inventor sets each transistor of the composite chip as a transistor that constitutes a different amplification system, even if a composite chip is used. As a result, the inventors noticed that abnormal oscillation can be prevented because the transistors adjacent to the operated transistors do not operate even if one amplification system operates.
[0012]
In the case where a single transistor is incorporated in a single semiconductor chip, it is a common technique to charge and separate each transistor in mounting design.
[0013]
An object of the present invention is to prevent oscillation in a high-frequency power amplifier for a multiband communication system and / or multimode communication system having a plurality of high-frequency power amplifier systems.
[0014]
Another object of the present invention is to provide a multi-band communication system and / or a multi-mode communication system mobile communication device capable of preventing abnormal oscillation.
[0015]
The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
[0016]
[Means for Solving the Problems]
(1) A high-frequency power amplifying apparatus including a wiring board and a plurality of high-frequency power amplification systems formed on the wiring board, wherein each high-frequency power amplification system is composed of a plurality of subordinately connected transistors. In addition, two or more or all of the transistors of the high-frequency power amplification system are monolithically formed on a single semiconductor chip, and adjacent transistors provided on the semiconductor chip are different from each other in high-frequency power amplification. An aerial wiring body that electrically connects between wirings of the wiring board is provided at least in the vicinity of the final stage transistor, and the aerial wiring body is an electrode of the transistor. It extends in a direction that includes and intersects with the extending direction of the conductive wire connected to. The aerial wiring body is formed of a metal body having a lower DC resistance than the wiring on the surface layer or inner layer of the wiring board. Each of the high-frequency power amplification systems is configured to amplify signals having different carrier frequencies.
[0017]
(2) A radio communication device in which the high frequency power amplifying apparatus having the configuration of the means (1) is incorporated is configured. The wireless communication device constitutes a mobile communication device of a multiband communication method and / or a multimode communication method.
[0018]
According to the means of (1), (a) a composite chip is provided corresponding to each high-frequency power amplification system, but adjacent transistors provided in these composite chips are of different high-frequency power amplification systems. Since a transistor is configured, when one high-frequency power amplification system is operating, transistors adjacent to transistors operating in the composite chip do not operate, so that crosstalk is unlikely to occur between adjacent transistor wires. Abnormal oscillation can be prevented.
[0019]
(B) Since the aerial wiring body provided in the vicinity of the transistor extends in an intersecting direction including and perpendicular to the extending direction of the conductive wire connected to the electrode of the transistor, each wire Are less susceptible to the electromagnetic field generated by the aerial wiring body, especially when orthogonal, and are less susceptible to abnormal oscillation due to crosstalk.
[0020]
In the wireless communication device according to the means (2), the transistors constituting the plurality of high-frequency power amplification systems of the built-in high-frequency power amplification device are formed on a single composite chip. Since the transistors constitute different high-frequency power amplification systems, abnormal oscillation is unlikely to occur between adjacent transistors, and a stable call can be achieved.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof is omitted.
[0022]
(Embodiment 1)
In the first embodiment, with respect to an example in which the present invention is applied to a multi-band communication system mobile communication device, more specifically, a dual-band communication system mobile communication device and dual-band high-frequency power incorporated in the mobile communication device An example applied to an amplifying apparatus will be described.
[0023]
1 to 6 are diagrams relating to a dual-band high-frequency power amplifier (high-frequency power amplifier module: PA module) according to an embodiment (embodiment 1) of the present invention.
[0024]
As shown in the perspective view of FIG. 3, the dual-band PA module 1 of the first embodiment has a flat rectangular body structure in appearance. That is, in the dual-band PA module 1, a flat rectangular body-shaped package 22 is configured by a plate-like wiring board 20 and a cap 21 that is attached to be overlapped on one surface side (main surface side) of the wiring board 20. It has a structure.
[0025]
The dual-band PA module 1 has an active component such as a transistor or a passive component such as a chip resistor or a chip capacitor mounted on one surface side of a multilayer wiring board 20 and a multistage amplifier by connecting a plurality of transistors in cascade. It has a module configuration with two systems.
[0026]
In the first embodiment, the high-frequency power amplification system includes two systems, a first high-frequency power amplification system and a second high-frequency power amplification system. Each high-frequency power amplification system has a three-stage configuration (first stage (first stage), second stage, last stage (three stages)) in which three transistors are cascade-connected.
[0027]
Further, one surface side of the wiring board 20 is covered with a metal cap 21 that plays an electromagnetic shielding effect. The cap 21 is directly fixed to the wiring board 20, and a package 22 is constituted by the wiring board 20 and the cap 21.
[0028]
Electrically independent external electrode terminals (electrode terminals) protrude from the package 22. That is, in this example, as shown in FIG. 4, external electrode terminals for surface mounting are provided on the periphery of the lower surface (bottom surface) of the wiring board 20.
[0029]
As shown in FIG. 4, the external electrode terminal includes an input terminal (Pin 1) and a first reference potential terminal (for example, a power supply terminal) of the first high-frequency power amplification system from left to right along one edge of the package 22. : Vdd), a second reference potential terminal (for example, ground terminal: GND), a control terminal (Vapc1) of the first high-frequency power amplification system, and an output terminal (Pout1) of the first high-frequency power amplification system. From left to right along the edge, the input terminal (Pin2) of the second high-frequency power amplification system, GND, the control terminal (Vapc2) of the second high-frequency power amplification system, and the output terminal (Pout2) of the second high-frequency power amplification system ) Is provided. These external electrode terminals are provided from the side surface to the bottom surface of the wiring board 20.
[0030]
Further, the dual band PA module 1 has a surface mounting structure by solder or the like. In this mounting, as shown in FIG. 4, in order to make the solder thickness of each region uniform on the bottom surface of the wiring board 20, The GND wiring is covered with a resist film 23 that is selectively provided. Thereby, the reliability at the time of mounting of dual band PA module 1 can be aimed at.
[0031]
FIG. 5 is an equivalent circuit diagram of the dual-band PA module 1 of the first embodiment. In the first embodiment, the high frequency power amplification system is provided with two amplification systems, a first high frequency power amplification system 2 and a second high frequency power amplification system 3, each having a three-stage configuration.
[0032]
In the first high-frequency power amplification system 2, the first-stage transistor Q1, the second-stage transistor Q2, and the third-stage transistor Q3 are provided, and a signal is input from the Pin1 terminal and a signal is output from the Pout1 terminal.
[0033]
In the second high frequency power amplification system 3, the first stage transistor Q4, the second stage transistor Q5, and the third stage transistor Q6 are provided, and a signal is input from the Pin2 terminal and a signal is output from the Pout2 terminal.
[0034]
Also, capacitors (C1 to C16) and resistors (R1 to R6) are incorporated in each part for matching or potential adjustment. The Vdd terminal is connected to the drain terminal of each transistor. Vapc1 is connected to the gate electrodes of transistors Q1, Q2, and Q3 via resistors R1, R2, and R3, respectively, and Vapc2 is connected to the gate electrodes of transistors Q4, Q5, and Q6 via resistors R4, R5, and R6, respectively. Has been.
[0035]
As shown in FIG. 6, such a circuit is formed by mounting each electronic component (the transistor, the resistor, and the capacitor) on the wiring board 20. As shown in FIG. 6, wirings 25 are formed in a predetermined pattern on the main surface of the wiring board 20. A wire connection pad 15 for connecting the other end of the wire 16 having one end connected to the electrode 14 of the transistor is also formed by the wiring 25.
[0036]
On the other hand, this is one of the features of the present invention. In the first embodiment, as shown in FIGS. 1, 2, and 6, the first high-frequency power amplification system 2 is added to the composite chip 30 composed of a single semiconductor chip. The first-stage transistor Q1 and the first-stage transistor Q4 of the second high-frequency power amplification system 3 are formed.
[0037]
Further, the second-stage transistor Q2 of the first high-frequency power amplification system 2 and the second-stage transistor Q5 of the second high-frequency power amplification system 3 are formed on the composite chip 31 made of a single semiconductor chip.
[0038]
The third-stage transistor Q3 of the first high-frequency power amplification system 2 is formed on a single semiconductor chip 32, and the third-stage transistor Q6 of the second high-frequency power amplification system 3 is formed on a single semiconductor chip 33. Yes.
[0039]
The electrodes 14 (drain electrodes and gate electrodes) of the transistors Q1 to Q6 and the corresponding wiring 25 portions, that is, the wire connection pads 15 are electrically connected by the conductive wires 16 (see FIG. 2). .
[0040]
Such a dual-band PA module 1 has two high-frequency power amplification systems, and the high-frequency power amplification system of each system operates by switching. In each of the composite chip 30 and the composite chip 31, two transistors are provided. Whichever of the high frequency power amplification system is used, whichever is used in the composite chip provided with the two transistors? One transistor operates and the other transistor does not operate, and crosstalk between adjacent transistors in the composite chip is less likely to occur.
[0041]
In FIG. 2, for example, the transistors in the operating state are shown hatched. In this figure, the first high-frequency power amplification system 2 operates, and the transistors Q1, Q2, and Q3 operate. As a result, in the composite chip 30, crosstalk between the adjacent transistors Q1 and Q4 hardly occurs. Similarly, in the composite chip 31, crosstalk between adjacent transistors Q2 and Q5 is less likely to occur.
[0042]
In the first embodiment, the first high-frequency power amplification system 2 is for GSM (carrier frequency 900 MHz), and the second high-frequency power amplification system 3 is for PCN (carrier frequency 1.75 GHz).
[0043]
The dual-band PA module 1 according to the first embodiment is incorporated as a wireless communication device, for example, in a mobile communication device. FIG. 7 is a block diagram of a radio unit of a mobile communication device (mobile phone) incorporating the dual band PA module 1.
[0044]
As shown in FIG. 7, the dual-band mobile phone includes a baseband unit 40 connected to a microphone and a speaker and having a baseband IC, and an analog / digital converter and a digital / analog converter connected to the baseband unit 40. A converter 41, a signal processing unit 42 connected to the converter 41, an antenna 43, a switch 44 for switching the antenna 43, and a dual-band PA incorporated between the signal processing unit 42 and the switch 44. Module 1, two sets of low noise amplifiers (LNA) 45 and 46 incorporated as two systems between the signal processing unit 42 and the switch 44, an RFVCO 47 connected to the signal processing unit 42, the RFVCO 47, and RFPLL and IFP connected to the signal processing unit 42 It is and a dual synthesizer 48 having a L.
[0045]
The signal processing unit 42 includes a modulator 50 as a transmission system and a PLL (Phase-Locked Loop) 51 connected to the modulator 50. The modulator 50 is connected to a converter 41, and the PLL 51 is connected to the dual-band PA module 1. It is connected.
[0046]
The signal processing unit 42 includes two RF mixers 52 and 53 connected to the low noise amplifiers (LNA) 45 and 46 prepared for two frequency bands as a receiving system, and the RF mixers 52 and 52, respectively. An IF mixer 54 having an AGC (Auto Gain Control) connected to 53 and a demodulator 55 connected to the IF mixer 54 are provided. The demodulator 55 is connected to the converter 41.
[0047]
The dual synthesizer 48 is connected to an IF mixer 54, a modulator 50, and a demodulator 55 via an IFVCO 56 provided in the signal processing unit 42. The RFVCO 47 is connected to the PLL 51 and the RF mixers 52 and 53.
[0048]
In a dual-band mobile phone having such a system configuration, an LNA, an RF mixer, an RFVCO, and a PA module corresponding to a system (frequency) to be used are selected, and the other is set to a sleep (non-use) mode. The switching is automatically selected according to the degree of congestion of each system, or arbitrarily selected manually.
[0049]
The dual-band mobile phone according to the first embodiment enables dual-band communication. The dual-band PA module 1 is unlikely to cause abnormal oscillation due to crosstalk between adjacent transistors in the composite chip, and can talk in a good state.
[0050]
The first embodiment has the following effects.
[0051]
(1) Composite chips 30 and 31 are provided corresponding to the respective high-frequency power amplification systems (first high-frequency power amplification system 2 and second high-frequency power amplification system 3), and these composite chips 30 and 31 are monolithic. The transistors formed adjacent to each other (Q1 and Q4 or Q2 and Q5) are transistors that constitute different high-frequency power amplification system transistors, so when one of the high-frequency power amplification systems is operating, Since the adjacent transistors do not operate, abnormal oscillation between the wires of the adjacent transistors is less likely to occur.
[0052]
(2) In a dual-band mobile phone, the high-frequency power amplifying device incorporated in the phone generates crosstalk between adjacent transistors during operation of the composite chip transistors as described in (1) above. This can prevent the occurrence of abnormal oscillation and can achieve a stable call that is unlikely to cause abnormal oscillation.
[0053]
(Embodiment 2)
8 to 10 are diagrams relating to a dual-band PA module according to another embodiment (Embodiment 2) of the present invention, FIG. 8 is an equivalent circuit diagram of the dual-band PA module, and FIG. 9 is equipped with electronic components. It is a schematic plan view of a wiring board.
[0054]
In the second embodiment, in the configuration of the first embodiment, the DC resistance of the wiring connected to the drain electrodes of the final stage transistors (Q3, Q6) of the first high-frequency power amplification system 2 and the second high-frequency power amplification system 3 In order to reduce the size, air wiring bodies (current air wiring bodies) 60 and 61 are interposed. The current aerial wiring bodies 60 and 61 extend so as to pass through the vicinity of the first-stage, second-stage, and final-stage transistors, and the extending direction thereof is connected to the electrode of each transistor as shown in FIG. The direction is perpendicular to the extending direction of the wire 16 to be connected.
[0055]
That is, FIG. 10 is a schematic diagram showing the relationship between the current aerial wiring body 60 and the wire 16. For example, the extending direction of the wire 16 connecting the electrode 14 of the transistor Q3 and the wire connection pad 15, and the current aerial wiring The extending direction of the body 60 is orthogonal. As described above, the extending direction of the current aerial wiring bodies 60 and 61 is brought close to 90 degrees with respect to the extending direction of the wire 16 of the transistor disposed in the vicinity of the current aerial wiring bodies 60 and 61, so It suppresses and prevents oscillation. The current aerial wiring bodies 60 and 61 only need to extend in a direction intersecting the extending direction of the wire 16, and the influence of the electromagnetic field can be reduced as the angle approaches 90 degrees.
[0056]
The current aerial wiring bodies 60 and 61 are formed of a wide metal body (for example, a copper plate having a width of about 1 mm and a thickness of about 0.1 mm) whose DC resistance is sufficiently smaller than the wiring on the surface layer and the inner layer of the wiring board 20.
[0057]
(Embodiment 3)
FIG. 11 is a schematic diagram showing a combination of a composite chip and a transistor of a dual-band PA module according to another embodiment (Embodiment 3) of the present invention. FIG. 11 (a) shows each transistor and semiconductor of a high-frequency power amplification system. FIG. 11B is a schematic diagram showing the arrangement state of each transistor in the semiconductor chip.
[0058]
The circuit configuration of the third embodiment is the same as that of the first and second embodiments, but the three-stage transistors are monolithically formed on a single semiconductor chip. That is, as shown in FIG. 11B, in the third embodiment, two composite chips 70 and 71 are used.
[0059]
One composite chip 70 includes a first-stage transistor Q1 of the first high-frequency power amplification system 2, a second-stage transistor Q5 of the second high-frequency power amplification system 3, and a third-stage transistor of the first high-frequency power amplification system 2. Q3 are arranged in a line sequentially.
[0060]
The other composite chip 71 includes a first stage transistor Q4 of the second high frequency power amplification system 3, a second stage transistor Q2 of the first high frequency power amplification system 2, and a third stage of the second high frequency power amplification system 3. The stage transistors Q6 are sequentially arranged in a line.
[0061]
As a result, the three transistors arranged in a row in both composite chips 70 and 71 become transistors that constitute mutually different high-frequency power amplification systems, so that the transistors adjacent to the operating transistors do not operate and are adjacent to each other. Therefore, it is possible to suppress abnormal oscillation caused by the transistors that perform the same operation.
[0062]
Therefore, the dual-band mobile phone incorporating the dual-band PA module according to the third embodiment can also prevent stable oscillation in the composite chip transistor since it can prevent abnormal oscillation between adjacent transistors during operation. It becomes like this.
[0063]
Although the invention made by the present inventor has been specifically described based on the embodiment, the present invention is not limited to the embodiment described above, and various modifications can be made without departing from the scope of the invention. For example, the present invention can be applied not only to communication systems with different frequencies but also to wireless communication including analog communication, digital communication, and communication targeting multimedia.
[0064]
【The invention's effect】
The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.
[0065]
(1) In a high-frequency power amplification apparatus having a plurality of high-frequency power amplification systems, since the plurality of transistors provided in the composite chip are transistors constituting different high-frequency power amplification systems, abnormal oscillation between the transistors Can be prevented. Therefore, a wireless communication device incorporating such a high-frequency power amplifying apparatus is unlikely to cause abnormal oscillation, so that stable telephone conversation is possible.
[0066]
(2) In the high frequency power amplifying device in which the aerial wiring body is provided in the vicinity of the transistor, the extending direction of the aerial wiring body is orthogonal to the extending direction of the wire connected to the electrode of the transistor. The influence of the electromagnetic field generated by the current aerial wiring is less likely to occur, and oscillation can be prevented. Therefore, a radio communication apparatus incorporating such a high-frequency power amplifying apparatus is unlikely to oscillate and can talk in a good state.
[Brief description of the drawings]
FIG. 1 is a schematic diagram showing two high-frequency power amplification systems of a dual-band high-frequency power amplification device according to an embodiment (Embodiment 1) of the present invention.
FIG. 2 is a schematic diagram schematically showing a transistor in an operation state of the dual-band PA module according to the first embodiment.
FIG. 3 is a perspective view showing an appearance of a dual band PA module according to the first embodiment.
FIG. 4 is a bottom view of the dual-band PA module according to the first embodiment.
FIG. 5 is an equivalent circuit diagram of the dual-band PA module according to the first embodiment.
6 is a schematic plan view showing a wiring board on which electronic components are mounted in the dual-band PA module of Embodiment 1. FIG.
FIG. 7 is a block diagram showing a system configuration of a mobile communication device incorporating the dual-band PA module according to the first embodiment.
FIG. 8 is an equivalent circuit diagram of a dual band PA module according to another embodiment (Embodiment 2) of the present invention.
FIG. 9 is a schematic plan view showing a wiring board on which electronic components are mounted in the dual-band PA module according to the second embodiment.
FIG. 10 is a schematic diagram showing a relationship between a current aerial wiring body and wires in the dual-band PA module according to the second embodiment.
FIG. 11 is a schematic diagram showing a combination of a composite chip and a transistor of a dual band PA module according to another embodiment (Embodiment 3) of the present invention.
FIG. 12 is a schematic diagram showing an arrangement configuration of a transistor of a dual-band RF power module and a chip incorporating the transistor studied prior to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Dual band high frequency power amplifier (dual band PA module), 2 ... 1st high frequency power amplifier system, 3 ... 2nd high frequency power amplifier system, 10 ... Composite chip, 11 ... Semiconductor chip, 12 ... Composite chip, 13 ... Semiconductor chip, 14 ... Electrode, 15 ... Wire connection pad, 16 ... Wire, 20 ... Wiring substrate, 21 ... Cap, 22 ... Package, 23 ... Resist film, 25 ... Wiring, 30, 31 ... Composite chip, 32, DESCRIPTION OF SYMBOLS 33 ... Semiconductor chip, 40 ... Baseband part, 41 ... Converter, 42 ... Signal processing part, 43 ... Antenna, 44 ... Switch, 45, 46 ... Low noise amplifier (LNA), 47 ... RFVCO, 48 ... Dual synthesizer, 50 ... modulator, 51 ... PLL, 52, 53 ... RF mixer, 54 ... IF mixer, 55 ... demodulator, 56 ... IFVCO, 60, 61 Current aerial wiring body, 70, 71 ... Composite chip, Q1, Q4 ... First stage transistor, Q2, Q5 ... Second stage transistor, Q3, Q6 ... Third stage transistor, C1-C16 ... Capacitor, R1-R6 ... Resistance .

Claims (6)

A high-frequency power amplifier including a wiring board and a plurality of high-frequency power amplification systems formed on the wiring board, wherein each high-frequency power amplification system includes a plurality of subordinately connected transistors, Two or more or all of the high-frequency power amplifying transistors are monolithically formed on a single semiconductor chip, and adjacent transistors provided on the semiconductor chip constitute different high-frequency power amplifying systems. A high frequency power amplifying apparatus characterized by being a transistor that performs the same operation. A high-frequency power amplifier including a wiring board and a plurality of high-frequency power amplification systems formed on the wiring board, wherein each high-frequency power amplification system includes a plurality of subordinately connected transistors, Two or more or all of the high-frequency power amplifying transistors are monolithically formed on a single semiconductor chip, and adjacent transistors provided on the semiconductor chip constitute different high-frequency power amplifying systems. An aerial wiring body for electrically connecting the wirings of the wiring board is provided at least in the vicinity of the final stage transistor, and the aerial wiring body is connected to the electrode of the transistor. Extending in a direction that includes and intersects with the direction of extension of the conductive wire. Wave power amplifier. The high-frequency power amplifying apparatus according to claim 2, wherein the aerial wiring body is formed of a metal body having a DC resistance smaller than that of a wiring on a surface layer or an inner layer of the wiring board. 4. The high-frequency power amplification apparatus according to claim 1, wherein each of the high-frequency power amplification systems is configured to amplify signals having different carrier frequencies. 5. A wireless communication device in which a high-frequency power amplifying device having a plurality of high-frequency power amplifying systems is incorporated, wherein the high-frequency power amplifying device has the configuration according to any one of claims 1 to 4. A wireless communication device. 6. The wireless communication device according to claim 5, wherein the wireless communication device constitutes a mobile communication device of a multiband communication method and / or a multimode communication method.

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