JP3631633B2 - Hybrid integrated circuit device - Google Patents

Hybrid integrated circuit device Download PDF

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Publication number
JP3631633B2
JP3631633B2 JP15065299A JP15065299A JP3631633B2 JP 3631633 B2 JP3631633 B2 JP 3631633B2 JP 15065299 A JP15065299 A JP 15065299A JP 15065299 A JP15065299 A JP 15065299A JP 3631633 B2 JP3631633 B2 JP 3631633B2
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Japan
Prior art keywords
bonding wire
integrated circuit
pad
connection
connection electrode
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Expired - Fee Related
Application number
JP15065299A
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Japanese (ja)
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JP2000340597A (en
Inventor
国英 岩元
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Kyocera Corp
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Kyocera Corp
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Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP15065299A priority Critical patent/JP3631633B2/en
Publication of JP2000340597A publication Critical patent/JP2000340597A/en
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Publication of JP3631633B2 publication Critical patent/JP3631633B2/en
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Description

【０００１】
【発明の属する技術分野】
本発明は、半導体ベアチップと配線基板とがアルミニウムを主成分とするボンディングワイヤを介して接続された混成集積回路装置に関し、特に、自動車のエンジンルームのような熱や振動の過酷な環境下で使用しても、ボンディングワイヤの接続信頼性を高めることができる混成集積回路装置に関するものである。
【０００２】
【従来技術】
従来から、混成集積回路装置は、配線基板上に１又は複数の半導体ベアチップを搭載して構成され、その電気的接続については、半導体ベアチップの主面に形成した入出力用の接続電極と、配線基板の主面に形成したボンディングワイヤ用パッドにボンディングワイヤを介して接続されている。
【０００３】
このような混成集積回路装置を、例えば、自動車のエンジンルームのように稼働雰囲気が高温で、かつ、温度変化，機械的な振動も激しい環境下で使用させる場合には、熱的・機械的振動にも強いアルミニウムを主成分とするボンディングワイヤが使用されていた。
【０００４】
このようなボンディングワイヤの接続構造を図４に基づいて説明する。即ち、１００は混成集積回路装置であり、混成集積回路装置１００は半導体ベアチップ１１の表面に入出力用の接続電極１２が、また、配線基板１０の表面にボンディングワイヤ用パッド１３が形成され、配線基板１０上に半導体ベアチップ１１を搭載して構成されている。この半導体ベアチップ１１上の接続電極１２から配線基板１０上のボンディングワイヤ用パッド１３にかけて所定量湾曲させたボンディングワイヤ１４が接続されている。
【０００５】
このボンディングワイヤ１４を、例えば、接続電極１２，ボンディングワイヤ用パッド１３に溶着接続するには、ボンディングワイヤ１４の一方の先端１４ａから立ち上がり部１４ｂにかけて線接触した状態で接続電極１２に当接し、当接部位を超音波溶着により接続させ、また、ボンディングワイヤ１４の立ち上り部１４ｄから他方の先端１４ｃにかけて線接触した状態でボンディングワイヤ用パッド１３に当接し、当接部位を超音波溶着により接続させていた。
【０００６】
【発明が解決しようとする課題】
しかしながら、ボンディングワイヤ１４の立ち上り部１４ｂ，１４ｄを形成する構造では、立ち上り部１４ｂ，１４ｄの形成時に歪みが生じやすく、時には亀裂が入ることがあった。
【０００７】
また、ボンディングワイヤ１４の接続時に歪みが生じていなくても稼働雰囲気が高温になり、温度変化，機械的振動が激しい環境下（以下、過酷な環境下という）で長期に亘って使用する場合には、半導体ベアチップ１１と配線基板１０間の熱膨張係数の差，ボンディングワイヤ１４自身の熱膨張係数の大きさ，機械的振動などによって立ち上り部１４ｂ，１４ｃに繰り返し熱的・機械的応力がかって歪みが発生し、これによっても立ち上り部１４ｂ，１４ｃに亀裂が生じて断線に至る場合があった。
【０００８】
本発明は上述の課題に鑑みて案出されたものであり、いかなる環境下で使用したとしてもボンディングワイヤの接続信頼性を有した混成集積回路装置を提供することを目的とする。
【０００９】
【課題を解決するための手段】
上記課題を解決するために本発明の混成集積回路装置は、表面に入出力用の接続電極が設けられた半導体ベアチップと、ボンディングワイヤ用パッドが設けられた配線基板とから成り、前記配線基板上に前記半導体ベアチップを搭載すると共に、直径が１００〜５００μｍのアルミニウムを主成分とするボンディングワイヤにより前記接続電極とボンディングワイヤ用パッドとの間を容着接続して成る混成集積回路装置において、前記ボンディングワイヤの端部を断面三角形状にして前記接続電極及びボンディングワイヤ用パッドにその平面を容着接続するとともに、前記ボンディングワイヤが接続電極及びボンディングワイヤ用パッドの双方から立ち上げた立ち上がり部を形成し、かつ、前記接続電極とボンディングワイヤ用パッドとの間に複数の折曲部を形成した構成とする。
【００１０】
本発明の構成によれば、１００〜５００μｍのボンディングワイヤを用いることにより、ボンディングワイヤを溶着接続させた位置から立ち上がる部分（立ち上り部）に生じる歪みを抑制できると共に、配線に複数の凹又は凸状の折曲部を形成することで、過酷な環境下で長期に亘って使用しても、立ち上り部に熱的・機械的応力が集中するのが分散でき、立ち上り部に亀裂が生じて断線するのを防止できる。この結果、ボンディングワイヤの長期に亘る接続信頼性を向上することができる。
【００１１】
【発明の実施の形態】
以下、本発明の混成集積回路装置を図面に基づいて詳細に説明する。
図１は本発明の混成集積回路装置１の斜視図であり、図２はボンディングワイヤの接続状態を説明する図である。
図１において、混成集積回路装置１は、配線基板２上に半導体ベアチップ３が搭載され、半導体ベアチップ３表面からボンディングワイヤ４を介して配線基板２に接続されている。以下に図２に基づいて配線基板２，半導体ベアチップ３，ボンディングワイヤ４について詳細に説明する。
【００１２】
配線基板２は、過酷な環境下においても優れた耐久性と信頼性を高める上で、セラミックスから成ることが望ましく、具体的には、アルミナ（Ａｌ２ Ｏ３ ），窒化アルミニウム（ＡｌＮ），窒化珪素（Ｓｉ３ Ｎ４ ），ムライト（３Ａｌ２ Ｏ３ ・２ＳｉＯ２ ）等のセラミック材料，これらセラミック材料とガラスとを混在させたガラスセラミック等が好適に使用される。
【００１３】
また、配線基板２の表面にはボンディングワイヤ用パッド２０が被着形成されている。ボンディングワイヤ用パッド２０の材質としては、Ａｕ，Ｃｕ、ＡｇＰｔ，ＡｇＰｄ，Ａｇ等の厚膜電極や、Ｗ，Ｍｏ，Ｍｏ‐Ｍｎ等の金属によって構成され、さらに、それらの表面には、ＮｉメッキやＡｕメッキが施されても良い。特に後述の接続電極３０の表面やボンディングワイヤ４との接続性の点でＮｉメッキを施し、さらにＡｕメッキが施されていることが望ましい。
【００１４】
半導体ベアチップ３は、シリコーン・ガリヒ素から成る。また、半導体ベアチップ３の上側主面には入出力用の接続電極３０が被着形成されており、その材質としてはＡｌ等が例示できる。
【００１５】
ボンディングワイヤ４は、その一方端が半導体ベアチップ３の上面側に形成した接続電極３０に接続され、他方端は、配線基板２の上面に形成したボンディングワイヤ用パッド２０に接続され、全体として湾曲状を呈している。
【００１６】
このボンディングワイヤ４による接続はウエッジボンディング法により行われる。このウエッジボンディング法は以下のように接続される。即ち、ツール５の先端部５ａは断面三角状の凹部を有している（図５（ａ）参照）。この先端部５ａでボンディングワイヤ４を押さえて接続電極３０に当接し、超音波溶着を行うことでボンディングワイヤ４が断面三角形状に変形され（図５（ｂ）参照）、その平面状で溶着接続される。その後、ボンディングワイヤ４を所定量湾曲させながらボンディングワイヤ用パッド２０に上述と同様の方法で溶着接続させてなる。
【００１７】
このようにして接続されるウエッジボンディング法により、ボンディングワイヤ４の端部付近は接続電極３０，ボンディングワイヤ用パッド２０から立ち上げた立ち上がり部４１，４２が形成される。
【００１８】
この各立ち上がり部４１，４２間に形成されたボンディングワイヤ４の配線は、全体として上に凸状に湾曲して形成される。この立ち上がり部４１，４２間に湾曲した配線を湾曲部４３と称し、湾曲部４３の所定位置に凸状に折り曲げられた折曲部４３ａ〜４３ｃが形成させている。なお、折曲部４３ａ〜４３ｃは湾曲部４３の外方に向いた凸状に折り曲げているがこれに限定されず、折曲部４３ａ〜４３ｃを湾曲部４３の内方に折り曲げた凹状に形成しても構わない。
【００１９】
湾曲部４３に形成する折曲部４３ａ〜４３ｃの最低数としては、過酷な環境下で使用する場合、１つだけ形成すると立ち上り部４１，４２の２ヶ所に集中する歪みを有効に分散させることができないため、少なくとも２つ以上は必要である。なお、湾曲部４３に形成する折曲部４３ａ〜４３ｃの最高数としては特に限定されないが、ボンディングワイヤ３０から接続電極３０までの距離や湾曲部４３の高さによって決定される。
【００２０】
次に折曲部４３ａ〜４３ｃの形成方法を図３に基づいて説明する。まず、ツール５によってクランプ５１に保持されたボンディングワイヤ４を接続電極３０に超音波溶着させる。次にツール５を接続位置ＡからＢに向けて±Ｘ ・±Ｙ方向に各々移動させながら湾曲部４３を形成する。この時、ツール５の動きを制御するパラメータ（Ｘ・Ｙ方向移動量、移動速度）を微妙にコントロールして、折曲部４３ａ，４３ｂを形成する。即ち、接続位置Ａにボンディングワイヤ４の端部を線接続及び超音波溶着する。その後、ボンディングワイヤ４の接続部分を支点としてボンディングワイヤ４を＋Ｙ方向へ上昇して立ち上がり部４１を形成する。次に、立ち上がり部４１の＋Ｙ方向の高さで−Ｘ方向にツール５を大きく移動させる。そして、その位置より＋Ｙ方向へ低速度で少量上昇させながら、＋Ｘ方向へ移動させて折曲部４３ａを形成する。さらに、＋Ｙ方向へ低速度で上昇させながら、＋Ｘ方向へ高速移動させ、所定量上昇させた後に接続位置Ｂに向かってＸ・Ｙ方向に等速で降下させ４３ｂを形成する。次に、接続電極３０の接続位置Ｂでボンディングワイヤ４の他方端となる部位に超音波溶着を施すことで立ち上がり部４２を形成し、端部を切断する。なお、ツール５による接続順序としては、ボンディングワイヤ用パッドから接続させても構わない。
【００２１】
以上が２ケ所の折曲部４３ａ、４３ｂを持つ湾曲部４３の形成方法であり、３ケ所の折曲部４３ａ〜４３ｃを設けるためには、折曲部４３ｂから折曲部４３ｃに降下する時に、大きく接続位置Ｂを超えてツール５を＋Ｘ方向へ移動させることで行われる。
【００２２】
本発明に用いられるボンディングワイヤ４はアルミニウムを主成分とする金属線からなる。
ワイヤの直径が５００μｍよりも大きいと、ボンディングワイヤ４自体の剛性が高くなってしまい、過酷な環境下では半導体ベアチップ３と配線基板２間の熱膨張係数の差でボンディングワイヤ４が断線する可能性が高くなるだけでなく、ボンディングワイヤ用パッド２０を構成する電極が接続時のストレスにより破壊する。
【００２３】
また、ボンディングワイヤ４の直径が１００μｍよりも細すぎると、所望の剛性が得られず、接続時に立ち上り部４１，４２に歪みが発生しやすくなる。即ち、図５（ｂ）（ｃ）に示すようにボンディング用のツール５は溶着接続時にボンディングワイヤ４を断面三角形状に変形させて溶着接着するが、ボンディングワイヤの直径が１００μｍよりも細すぎるとボンディングワイヤ４の頂部４ａが細くなり、立ち上り部４１，４２で歪みが起きやすくなる。
【００２４】
従って、所望の剛性により立ち上り部４１，４２の歪みが抑制でき、しかも、良好な接続性を得るためにもボンディングワイヤ４の直径が１００〜５００μｍの配線を使用すると良い。
【００２５】
また、ボンディングワイヤ４の湾曲部４３の高さ （頂点）が低すぎると装置的に所定量湾曲させることが困難であるため、１ｍｍ以上であることが望ましい。一方、湾曲部４３の最大高さが高すぎると、混成集積回路装置１の外形上が大きくなる他、ボンディングワイヤ４の腐食防止に用いる保護ゲルの量が多くなり、コスト高につながるといった問題が生じるために、この高さは５ｍｍ以下が適当である。
【００２６】
さらに、ボンディングワイヤ４をつなぐ距離はボンディングワイヤ用パッド２０と接続電極３０の距離が短かすぎるとボンディング用ツールの干渉が発生する恐れが生じやすく、距離が長すぎると混成集積回路装置１の外形が大きくなるため、ボンディングワイヤ用パッド２０と接続電極３０の距離は３〜２０ｍｍが適当である。
【００２７】
本発明の構成によれば、ボンディングワイヤ４の直径が１００〜５００μｍのものが用いられために溶着接続時にボンディングワイヤ４の立ち上がり部４１，４２に生じる歪みを抑制することができる。
また、過酷な環境下で混成集積回路装置１を使用する場合、半導体ベアチップ３と配線基板２間の熱膨張係数の差，ボンディングワイヤ４自身の熱膨張係数の大きさ，機械的振動などによって、立ち上り部４１，４２に熱的・機械的応力が集中するのを凹又は凸状の折曲部４３ａ〜４３ｃにより分散させることができ、この結果、ボンディングワイヤ４の立ち上り部４１，４２に亀裂，ワイヤボンディングの壁の剥がれが生じるのを抑制することができる。
【００２８】
【実施例】
本発明の作用効果を確認するために、以下の試作装置を作成した。
（試作装置の製作）
アルミナセラミックスから成る配線基板の表面に形成したダイヤタッチ及びボンディングワイヤ用パッドを形成し、その表面に無電解Ｎｉメッキを施し、さらにその上に無電解Ａｕメッキを施して配線基板を製作した。次に、Ａｌの接続電極を形成した半導体ベアチップを用意し、クリーンルーム内において半導体ベアチップを実装させる銀ペーストを印刷し、半導体ベアチップを所定の部位に実装しオーブン中で硬化処理を行った。
次に、半導体ベアチップ上の接続電極と配線基板上のパッドを、超音波ボンディング用のツールを用いてボンディングワイヤを超音波溶着させた。その際に折曲部を形成しない場合，折曲部を１ヵ所形成する場合，２ヵ所形成する場合，３ヵ所形成する場合の各々について、ボンディングワイヤ径の条件を変化させることでボンディングワイヤの接続信頼性の評価を行った。
【００２９】
（評価内容）
接続するボンディングワイヤの接続信頼性を評価するため、温度範囲−４０℃〜１２５℃の環境下、各環境下について各試料を３０分保持させた気槽温度サイクル試験を２０００サイクル行いワイヤ断線の有無を確認した。
また、ボンディングワイヤの立ち上がり部の接続状態を走査型電子顕微鏡で評価しプル強度も確認した。ここで、プル強度の確認は、ワイヤープルテスターを用いテスターのロードセル先端部にφ５００μｍ 程の金属棒をＬ字型に曲げたフックを取り付け、そのフックにてボンディングワイヤの長さ方向中央部を基板に対し垂直方向へ０．５ｍｍ／ｓｅｃの速度にて引っ張り上げ、ボンディングワイヤが破断した時の強度を測定した。この実験についての結果を表１に示す。
【００３０】
【表１】

Figure 0003631633
【００３１】
（実験結果）
表１の結果から明らかなように、ボンディングワイヤの直径が１００〜５００μｍで折曲部を複数（２以上）有したボンディングワイヤの場合（試料２，５，６，９，１０，１３，１４，１７，１８）には、温度サイクル試験後の断線は認められていない。また、温度サイクル試験後においても、十分な接続強度が保たれ、接続信頼性に優れていることが判った。
【００３２】
これに対して、折曲部がないか又は単数（１つ）の場合（試料３，４，７，８，１１，１２，１５，１６）は、亀裂が生じて断線に至ることが確認された。特に、折曲部が１個の場合は、亀裂の発生は折曲部がない場合に比べて少ないが１個の折曲部のみを形成するだけでは２つの立ち上がり部にかかる負荷が軽減できないことがわかった。
【００３３】
さらに、直径が１００〜６００μｍのボンディングワイヤについて（試料２〜２０）、接続時にその立ち上り部を走査型電子顕微鏡で観察したが支障を起こす歪みは見つからなかった。しかし、接続時に直径が８０μｍのボンディングワイヤ（試料１）の立ち上り部を走査型電子顕微鏡で観察したら歪みが観測された。なお、直径６００μｍのボンディングワイヤ（試料１９，２０）では、試験後にボンディングワイヤ用パッドを構成する電極が溶着接続時のストレスにより破壊した。
【００３４】
【発明の効果】
本発明の構成によれば、１００〜５００μｍのアルミ線を利用したボンディングワイヤを用いることにより、ボンディングワイヤを溶着接続させた位置から立ち上り部に生じる歪みを抑制できると共に、配線に複数の凹又は凸状の折曲部を形成することで、過酷な環境下で長期に亘って使用しても、立ち上り部に熱的・機械的応力が集中するのが分散でき、立ち上り部に亀裂が生じて断線するのを防止できる。
【００３５】
また、自動車のエンジンルーム等の過酷な環境下で使用される場合に、ボンディングワイヤ自身がバネ的役割により機械的振動を吸収し、機械的負荷にも耐え得る構造を有し、接続信頼性を向上させた混成集積回路装置が提供できる。
【図面の簡単な説明】
【図１】本発明の混成集積回路装置の全体を説明する図である。
【図２】本発明のボンディングワイヤ接続状態を説明する図である。
【図３】超音波ボンディング用のツールを用いてボンディングワイヤを接続する説明図である。
【図４】従来のボンディングワイヤ接続状態を説明する図である。
【図５】ウエッジボンディングによるボンディングワイヤを説明する図であり、（ａ）は接続前のツールとボンディングワイヤの説明図、（ｂ）は接続後のボンディングワイヤの説明図、（ｃ）は接続後に立ち上げ部を形成することを説明する図である。
【符号の説明】
１：混成集積回路装置
２：配線基板
２０：ボンディングワイヤ用パッド
３：半導体ベアチップ
３０：接続電極
４：ボンディングワイヤ
４１，４２：立ち上がり部
４３ａ〜４３ｃ：折曲部
５：ツール[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a hybrid integrated circuit device in which a semiconductor bare chip and a wiring board are connected via a bonding wire containing aluminum as a main component, and particularly, used in a severe environment of heat and vibration such as an engine room of an automobile. However, the present invention relates to a hybrid integrated circuit device that can improve the connection reliability of bonding wires.
[0002]
[Prior art]
Conventionally, a hybrid integrated circuit device is configured by mounting one or a plurality of semiconductor bare chips on a wiring board, and the electrical connection is made with connection electrodes for input / output formed on the main surface of the semiconductor bare chip and wiring. A bonding wire pad formed on the main surface of the substrate is connected via a bonding wire.
[0003]
When such a hybrid integrated circuit device is used in an environment where the operating atmosphere is high and the temperature change and mechanical vibration are severe, such as an engine room of an automobile, for example, thermal and mechanical vibrations are used. Bonding wire mainly composed of strong aluminum was used.
[0004]
Such a bonding wire connection structure will be described with reference to FIG. That is, reference numeral 100 denotes a hybrid integrated circuit device. In the hybrid integrated circuit device 100, input / output connection electrodes 12 are formed on the surface of the semiconductor bare chip 11, and bonding wire pads 13 are formed on the surface of the wiring substrate 10. The semiconductor bare chip 11 is mounted on the substrate 10. A bonding wire 14 that is bent by a predetermined amount is connected from the connection electrode 12 on the semiconductor bare chip 11 to the bonding wire pad 13 on the wiring substrate 10.
[0005]
In order to weld and connect the bonding wire 14 to, for example, the connection electrode 12 and the bonding wire pad 13, the bonding wire 14 is brought into contact with the connection electrode 12 while being in line contact from one end 14 a to the rising portion 14 b of the bonding wire 14. The contact portion is connected by ultrasonic welding, and is in contact with the bonding wire pad 13 in a line contact state from the rising portion 14d of the bonding wire 14 to the other tip 14c, and the contact portion is connected by ultrasonic welding. It was.
[0006]
[Problems to be solved by the invention]
However, in the structure in which the rising portions 14b and 14d of the bonding wire 14 are formed, distortion is likely to occur when the rising portions 14b and 14d are formed, and sometimes cracks occur.
[0007]
In addition, even when there is no distortion when the bonding wire 14 is connected, the operating atmosphere becomes high temperature, and it is used for a long period of time in an environment where temperature change and mechanical vibration are severe (hereinafter, referred to as harsh environment). The rising portions 14b and 14c are repeatedly subjected to thermal / mechanical stress due to a difference in thermal expansion coefficient between the semiconductor bare chip 11 and the wiring substrate 10, the magnitude of the thermal expansion coefficient of the bonding wire 14 itself, mechanical vibration, and the like. As a result, cracks may occur in the rising portions 14b and 14c, resulting in disconnection.
[0008]
The present invention has been devised in view of the above-described problems, and an object of the present invention is to provide a hybrid integrated circuit device having bonding wire connection reliability regardless of the environment.
[0009]
[Means for Solving the Problems]
In order to solve the above problems, a hybrid integrated circuit device according to the present invention comprises a semiconductor bare chip having a connection electrode for input / output on the surface and a wiring board having bonding wire pads provided on the wiring board. wherein with mounting semiconductor bare chips, the hybrid integrated circuit device formed by connecting volume wear between the connection electrode and the bonding wire pad by a bonding wire mainly composed of aluminum 100~500μm diameter, the bonding to the the As a plane pad the connection electrode and the bonding wire ends of the wires in the triangular section with connecting containers deposition, forming a rising portion in which the bonding wire is launched from both the pad connection electrode and the bonding wire and, and, between the connection electrode and the bonding wire pad A structure in which a plurality of bent portions.
[0010]
According to the configuration of the present invention, by using a bonding wire of 100 to 500 μm, it is possible to suppress distortion generated at a portion (rising portion) rising from the position where the bonding wire is welded and connected, and the wiring has a plurality of concave or convex shapes. Even if used for a long time in a harsh environment, thermal and mechanical stress can be concentrated on the rising part, and the rising part will crack and break. Can be prevented. As a result, the long-term connection reliability of the bonding wire can be improved.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a hybrid integrated circuit device of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a perspective view of a hybrid integrated circuit device 1 according to the present invention, and FIG. 2 is a diagram for explaining a connection state of bonding wires.
In FIG. 1, a hybrid integrated circuit device 1 has a semiconductor bare chip 3 mounted on a wiring board 2 and is connected to the wiring board 2 via bonding wires 4 from the surface of the semiconductor bare chip 3. Hereinafter, the wiring substrate 2, the semiconductor bare chip 3, and the bonding wire 4 will be described in detail with reference to FIG.
[0012]
The wiring board 2 is preferably made of ceramics in order to enhance excellent durability and reliability even in a harsh environment, and specifically, alumina (Al 2 O 3 ), aluminum nitride (AlN), nitride Ceramic materials such as silicon (Si 3 N 4 ) and mullite (3Al 2 O 3 .2SiO 2 ), glass ceramics in which these ceramic materials and glass are mixed, and the like are preferably used.
[0013]
A bonding wire pad 20 is formed on the surface of the wiring board 2. The bonding wire pad 20 is made of a thick film electrode such as Au, Cu, AgPt, AgPd, or Ag, or a metal such as W, Mo, or Mo-Mn, and the surface thereof is plated with Ni. Or Au plating may be applied. In particular, it is desirable that Ni plating is performed on the surface of the connection electrode 30 described later and the bonding wire 4, and Au plating is further performed.
[0014]
The semiconductor bare chip 3 is made of silicone / gallium arsenide. In addition, an input / output connection electrode 30 is deposited on the upper main surface of the semiconductor bare chip 3, and the material thereof can be exemplified by Al.
[0015]
The bonding wire 4 has one end connected to a connection electrode 30 formed on the upper surface side of the semiconductor bare chip 3, and the other end connected to a bonding wire pad 20 formed on the upper surface of the wiring substrate 2. Presents.
[0016]
Connection by the bonding wire 4 is performed by a wedge bonding method. This wedge bonding method is connected as follows. That is, the tip 5a of the tool 5 has a concave section with a triangular cross section (see FIG. 5A). The bonding wire 4 is pressed against the connection electrode 30 by the tip 5a and is ultrasonically welded to deform the bonding wire 4 into a triangular shape (see FIG. 5B). Is done. Thereafter, the bonding wire 4 is welded and connected to the bonding wire pad 20 in the same manner as described above while bending the bonding wire 4 by a predetermined amount.
[0017]
By the wedge bonding method thus connected, rising portions 41 and 42 raised from the connection electrode 30 and the bonding wire pad 20 are formed in the vicinity of the end portion of the bonding wire 4.
[0018]
The wiring of the bonding wire 4 formed between the rising portions 41 and 42 is formed to be curved upward and convex as a whole. The curved wiring between the rising portions 41 and 42 is referred to as a curved portion 43, and bent portions 43 a to 43 c that are bent in a convex shape at predetermined positions of the curved portion 43 are formed. The bent portions 43 a to 43 c are bent in a convex shape facing outward from the curved portion 43, but the present invention is not limited thereto, and the bent portions 43 a to 43 c are formed in a concave shape bent inward of the curved portion 43. It doesn't matter.
[0019]
As the minimum number of the bent portions 43a to 43c formed in the curved portion 43, when used in a harsh environment, when only one is formed, the strain concentrated at the two portions of the rising portions 41 and 42 is effectively dispersed. Because at least two or more are necessary. The maximum number of the bent portions 43 a to 43 c formed in the bending portion 43 is not particularly limited, but is determined by the distance from the bonding wire 30 to the connection electrode 30 and the height of the bending portion 43.
[0020]
Next, a method of forming the bent portions 43a to 43c will be described with reference to FIG. First, the bonding wire 4 held by the clamp 51 by the tool 5 is ultrasonically welded to the connection electrode 30. Next, the curved portion 43 is formed while the tool 5 is moved from the connection position A to B in the ± X and ± Y directions. At this time, the parameters (X / Y direction movement amount, movement speed) for controlling the movement of the tool 5 are finely controlled to form the bent portions 43a and 43b. That is, the end of the bonding wire 4 is connected to the connection position A and ultrasonically welded. Thereafter, the bonding wire 4 is raised in the + Y direction with the connecting portion of the bonding wire 4 as a fulcrum to form a rising portion 41. Next, the tool 5 is largely moved in the −X direction at the height of the rising portion 41 in the + Y direction. The bent portion 43a is formed by moving it in the + X direction while raising it a little from the position in the + Y direction at a low speed. Further, while moving up in the + Y direction at a low speed, it is moved at a high speed in the + X direction, raised by a predetermined amount, and then lowered toward the connection position B at a constant speed in the X and Y directions to form 43b. Next, the rising portion 42 is formed by applying ultrasonic welding to the portion that becomes the other end of the bonding wire 4 at the connection position B of the connection electrode 30, and the end portion is cut. In addition, as a connection order by the tool 5, you may connect from the pad for bonding wires.
[0021]
The above is the method of forming the bending portion 43 having the two bent portions 43a and 43b, and in order to provide the three bent portions 43a to 43c, when descending from the bent portion 43b to the bent portion 43c. This is performed by moving the tool 5 in the + X direction largely beyond the connection position B.
[0022]
The bonding wire 4 used in the present invention is made of a metal wire mainly composed of aluminum.
If the diameter of the wire is larger than 500 μm, the rigidity of the bonding wire 4 itself becomes high, and the bonding wire 4 may be disconnected due to a difference in thermal expansion coefficient between the semiconductor bare chip 3 and the wiring board 2 in a severe environment. In addition to the increase, the electrodes constituting the bonding wire pad 20 are destroyed by stress during connection.
[0023]
On the other hand, if the diameter of the bonding wire 4 is too smaller than 100 μm, the desired rigidity cannot be obtained, and the rising portions 41 and 42 are likely to be distorted during connection. That is, as shown in FIGS. 5B and 5C, the bonding tool 5 deforms the bonding wire 4 into a triangular shape at the time of welding connection and welds it. If the diameter of the bonding wire is too small than 100 μm, The top portion 4a of the bonding wire 4 is thinned, and the rising portions 41 and 42 are likely to be distorted.
[0024]
Therefore, it is preferable to use a wire having a diameter of the bonding wire 4 of 100 to 500 μm in order to suppress the distortion of the rising portions 41 and 42 due to a desired rigidity and to obtain good connectivity.
[0025]
In addition, if the height (vertex) of the bending portion 43 of the bonding wire 4 is too low, it is difficult to bend the apparatus by a predetermined amount. On the other hand, if the maximum height of the curved portion 43 is too high, the outer shape of the hybrid integrated circuit device 1 increases, and the amount of protective gel used to prevent corrosion of the bonding wire 4 increases, leading to high costs. For this to occur, this height is suitably 5 mm or less.
[0026]
Further, if the distance between the bonding wire 4 and the bonding wire pad 20 and the connection electrode 30 is too short, interference of the bonding tool is likely to occur. If the distance is too long, the outer shape of the hybrid integrated circuit device 1 is likely to occur. Therefore, the distance between the bonding wire pad 20 and the connection electrode 30 is suitably 3 to 20 mm.
[0027]
According to the configuration of the present invention, since the bonding wire 4 having a diameter of 100 to 500 μm is used, it is possible to suppress distortion generated in the rising portions 41 and 42 of the bonding wire 4 at the time of welding connection.
Further, when the hybrid integrated circuit device 1 is used in a harsh environment, due to the difference in thermal expansion coefficient between the semiconductor bare chip 3 and the wiring substrate 2, the size of the thermal expansion coefficient of the bonding wire 4 itself, mechanical vibration, etc. Concentration of thermal and mechanical stress on the rising portions 41 and 42 can be dispersed by the concave or convex bent portions 43a to 43c. As a result, the rising portions 41 and 42 of the bonding wire 4 are cracked, It is possible to suppress the peeling of the wire bonding wall.
[0028]
【Example】
In order to confirm the effects of the present invention, the following prototype device was created.
(Prototype production)
A diamond touch and bonding wire pad formed on the surface of a wiring substrate made of alumina ceramics was formed, electroless Ni plating was applied to the surface, and electroless Au plating was further applied thereon to manufacture a wiring substrate. Next, a semiconductor bare chip on which Al connection electrodes were formed was prepared, a silver paste for mounting the semiconductor bare chip was printed in a clean room, the semiconductor bare chip was mounted on a predetermined portion, and a curing process was performed in an oven.
Next, a bonding wire was ultrasonically welded to the connection electrode on the semiconductor bare chip and the pad on the wiring substrate by using an ultrasonic bonding tool. In this case, bonding wires can be connected by changing the condition of the bonding wire diameter for each case of forming no bent portion, forming one bent portion, forming two locations, or forming three locations. Reliability was evaluated.
[0029]
(Evaluation content)
In order to evaluate the connection reliability of the bonding wire to be connected, in the temperature range of −40 ° C. to 125 ° C., 2000 cycles of the air-bath temperature cycle test in which each sample was held for 30 minutes, whether or not the wire was broken It was confirmed.
Moreover, the connection state of the rising part of the bonding wire was evaluated with a scanning electron microscope, and the pull strength was also confirmed. Here, to confirm the pull strength, a wire pull tester is used to attach a hook in which a metal rod of about φ500 μm is bent in an L shape to the tip of the load cell of the tester, and the lengthwise center part of the bonding wire is the substrate with the hook. On the other hand, it was pulled up at a speed of 0.5 mm / sec in the vertical direction, and the strength when the bonding wire was broken was measured. The results for this experiment are shown in Table 1.
[0030]
[Table 1]
Figure 0003631633
[0031]
(Experimental result)
As is apparent from the results in Table 1, in the case of a bonding wire having a bonding wire diameter of 100 to 500 μm and a plurality of (two or more) bent portions (samples 2, 5, 6, 9, 10, 13, 14, 17 and 18), no disconnection after the temperature cycle test is observed. Further, it was found that sufficient connection strength was maintained even after the temperature cycle test and the connection reliability was excellent.
[0032]
On the other hand, in the case where there is no bent part or a single part (one) (samples 3, 4, 7, 8, 11, 12, 15, 16), it is confirmed that a crack occurs and the wire breaks. It was. In particular, when there is only one bent portion, the occurrence of cracks is less than when there is no bent portion, but the load on the two rising portions cannot be reduced by forming only one bent portion. I understood.
[0033]
Further, regarding the bonding wire having a diameter of 100 to 600 μm (samples 2 to 20), the rising portion was observed with a scanning electron microscope at the time of connection, but no distortion causing trouble was found. However, distortion was observed when the rising part of the bonding wire (sample 1) having a diameter of 80 μm was observed with a scanning electron microscope at the time of connection. In the case of a bonding wire having a diameter of 600 μm (samples 19 and 20), the electrodes constituting the bonding wire pad were destroyed after the test due to stress at the time of welding connection.
[0034]
【The invention's effect】
According to the configuration of the present invention, by using a bonding wire using an aluminum wire of 100 to 500 μm, it is possible to suppress distortion generated at the rising portion from the position where the bonding wire is welded and connected, and the wiring has a plurality of concave or convex portions. Even when used for a long time in a harsh environment, thermal and mechanical stress can be concentrated on the rising part, and cracks will occur in the rising part. Can be prevented.
[0035]
In addition, when used in a harsh environment such as an engine room of an automobile, the bonding wire itself has a structure that can absorb mechanical vibrations by a spring role and can withstand mechanical loads, thereby improving connection reliability. An improved hybrid integrated circuit device can be provided.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating an entire hybrid integrated circuit device according to the present invention.
FIG. 2 is a diagram illustrating a bonding wire connection state according to the present invention.
FIG. 3 is an explanatory diagram for connecting bonding wires using a tool for ultrasonic bonding.
FIG. 4 is a diagram for explaining a conventional bonding wire connection state;
5A and 5B are diagrams for explaining a bonding wire by wedge bonding, in which FIG. 5A is an explanatory diagram of a tool and a bonding wire before connection, FIG. 5B is an explanatory diagram of a bonding wire after connection, and FIG. It is a figure explaining forming a raising part.
[Explanation of symbols]
1: Hybrid integrated circuit device 2: Wiring substrate 20: Bonding wire pad 3: Semiconductor bare chip 30: Connection electrode 4: Bonding wire 41, 42: Rising portion 43a to 43c: Bending portion 5: Tool

Claims (1)

表面に入出力用の接続電極が設けられた半導体ベアチップと、ボンディングワイヤ用パッドが設けられた配線基板とから成り、前記配線基板上に前記半導体ベアチップを搭載すると共に、直径が１００〜５００μｍのアルミニウムを主成分とするボンディングワイヤにより前記接続電極とボンディングワイヤ用パッドとの間を容着接続して成る混成集積回路装置において、前記ボンディングワイヤの端部を断面三角形状にして前記接続電極及びボンディングワイヤ用パッドにその平面を容着接続するとともに、前記ボンディングワイヤが接続電極及びボンディングワイヤ用パッドの双方から立ち上げた立ち上がり部を形成し、かつ、前記接続電極とボンディングワイヤ用パッドとの間に複数の折曲部を形成したことを特徴とする混成集積回路装置。An aluminum having a semiconductor bare chip provided with input / output connection electrodes on the surface and a wiring board provided with bonding wire pads, and mounting the semiconductor bare chip on the wiring board and having a diameter of 100 to 500 μm in the hybrid integrated circuit device formed by connecting volume wear between the connection electrode and the bonding wire pad by a bonding wire whose main component is, the connection electrode and the bonding wire to the end of the bonding wire to the triangular cross section to use the pad plane of that with connecting containers adhesive, the bonding wire to form a rising portion launched from both the pad connection electrode and the bonding wire, and, between the connection electrode and the bonding wire pad Hybrid integrated circuit comprising a plurality of bent portions Location.
JP15065299A 1999-05-28 1999-05-28 Hybrid integrated circuit device Expired - Fee Related JP3631633B2 (en)

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