JP3623110B2 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
JP3623110B2
JP3623110B2 JP27689198A JP27689198A JP3623110B2 JP 3623110 B2 JP3623110 B2 JP 3623110B2 JP 27689198 A JP27689198 A JP 27689198A JP 27689198 A JP27689198 A JP 27689198A JP 3623110 B2 JP3623110 B2 JP 3623110B2
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type semiconductor
semiconductor layer
light emitting
conductivity
reverse
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JP2000114589A (en
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達也 岸本
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Kyocera Corp
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Kyocera Corp
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Description

【０００１】
【発明の属する技術分野】
本発明は半導体発光装置に関し、特にページプリンタ用感光ドラムの露光用光源などに用いられる半導体発光装置に関する。
【０００２】
【従来の技術及び発明が解決しようとする課題】
従来の半導体発光装置を図３および図４に示す。図３は断面図、図４は平面図である。図３および図４において、２１は半導体基板、２２は一導電型半導体層、２３は逆導電型半導体層、２４は個別電極、２５は共通電極である。
【０００３】
半導体基板２１上に、一導電型半導体層２２と逆導電型半導体層２３を一導電型半導体層２２よりも逆導電型半導体層２３が小面積となるように設けると共に、この一導電型半導体層２２の露出部Ｒに共通電極２５（２５ａ、２５ｂ）を接続して設け、逆導電型半導体層２３に個別電極２４を接続して設けている。なお、図３中、２６は窒化シリコン膜などから成る保護膜である。また、図４に示すように、共通電極２５（２５ａ、２５ｂ）は隣接する島状半導体層２２、２３ごとに異なる群に属するように二群に分けて接続して設けられ、隣接する島状半導体層２２、２３が同じ個別電極２４に接続されている。
【０００４】
このような発光ダイオードアレイでは、個別電極２４と共通電極２５（２５ａ、２５ｂ）の組み合わせを選択して電流を流すことによって、各発光ダイオードを選択的に発光させることができる。
【０００５】
ところが、この従来の半導体発光装置では、個別電極２４と共通電極２５（２５ａ、２５ｂ）が一導電型半導体層２２の露出部Ｒにおいて、対峙して近接して設けられていることから、電極のバリや塵埃などによって短絡することがしばしば発生するという問題があった。
【０００６】
また、従来の半導体発光装置では、島状半導体層２２、２３の露出部Ｒにおける逆導電型半導体層２３の側壁部Ｗが順メサとなるような構造になっていることから、この順メサ部分から光漏れが発生して印画品質が劣化する原因になるという問題があった。
【０００７】
本発明はこのような従来装置の問題点に鑑みてなされたものであり、一導電型半導体層の露出部Ｒにおける逆導電型半導体層の側壁部が順メサ構造であることに起因して発生する電極の短絡と印画品質の劣化を解消した半導体発光装置を提供することを目的とする。
【０００８】
【課題を解決するための手段】
上記目的を達成するために、本発明に係る半導体発光装置では、基板上に島状の一導電型半導体層を設けると共に、この一導電型半導体層上にこの一導電型半導体層の一部が露出するように逆導電型半導体層を設け、この一導電型半導体層の露出部と前記逆導電型半導体層上に電極を接続して設けた半導体発光装置において、前記逆導電型半導体層に接続される電極を矩形状に形成すると共に、前記一導電型半導体層の露出部における前記逆導電型半導体層の側壁部を逆メサ構造とし、この逆メサ構造部で光を反射させて上方に取り出すことを特徴とする。
【０００９】
【発明の実施の形態】
以下、本発明を添付図面に基づき詳細に説明する。
図１は本発明に係る半導体発光装置の一実施形態を示す断面図、図２は平面図である。
【００１０】
図１および図２において、１は基板、２は一導電型半導体層、３は逆導電型半導体層、４は個別電極、５は共通電極、６は絶縁膜である。
【００１１】
基板１はシリコン（Ｓｉ）やガリウム砒素（ＧａＡｓ）などの単結晶半導体基板やサファイア（Ａｌ２ Ｏ３ ）などの単結晶絶縁基板から成る。単結晶半導体基板の場合、（１００）面を＜０１１＞方向に２〜７°オフさせた基板などが好適に用いられる。サファイアの場合、Ｃ面基板が好適に用いられる。
【００１２】
一導電型半導体層２は、バッファ層２ａ、オーミックコンタクト層２ｂ、発光層２ｃで構成される。バッファ層２ａは２〜４μｍ程度の厚みに形成され、オーミックコンタクト層２ｂは０．１〜１．０μｍ程度の厚みに形成され、クラッド層２ｃは０．２〜０．４μｍ程度の厚みに形成される。バッファ層２ａとオーミックコンタクト層２ｂはガリウム砒素などで形成され、発光層２ｃはアルミニウムガリウム砒素などで形成される。オーミックコンタクト層２ｂはシリコンやセレンなどの一導電型半導体不純物を１×１０１８〜１０２２ａｔｏｍｓ／ｃｍ３ 程度含有し、クラッド層２ｃはシリコンやセレンなどの一導電型半導体不純物を１×１０１６〜１０１９ａｔｏｍｓ／ｃｍ３ 程度含有する。バッファ層２ａは基板１と半導体層との格子定数の不整合に基づくミスフィット転位を防止するために設けるものであり、半導体不純物を含有させる必要はない。
【００１３】
逆導電型半導体層３は、発光層３ａ、第２のクラッド層３ｂ、および第２のオーミックコンタクト層３ｃで構成される。発光層３ａと第２のクラッド層３ｂは０．２〜０．４μｍ程度の厚みに形成され、オーミックコンタクト層３ｃは０．０１〜０．１μｍ程度の厚みに形成される。発光層３ａと第２のクラッド層３ｂはアルミニウムガリウム砒素などから成り、第２のオーミックコンタクト層３ｃはガリウム砒素などから成る。
【００１４】
発光層３ａと第２のクラッド層３ｂは、電子の閉じ込め効果と光の取り出し効果を考慮してアルミニウム砒素（ＡｌＡｓ）とガリウム砒素（ＧａＡｓ）との混晶比を異ならしめる。発光層３ａと第２のクラッド層３ｂは亜鉛（Ｚｎ）などの逆導電型半導体不純物を１×１０１６〜１０１９程度含有し、第２のオーミックコンタクト層３ｃは亜鉛などの逆導電型半導体不純物を１×１０１９〜１０２２程度含有する。
【００１５】
絶縁膜６は窒化シリコンなどから成り、厚み３０００Å程度に形成される。個別電極４と共通電極５は金／クロム（Ａｕ／Ｃｒ）などから成り、厚み１μｍ程度に形成される。
【００１６】
本発明の半導体発光装置では、図２に示すように、一導電型半導体層２と逆導電型半導体層３から成る島状半導体層２、３を基板１上に一列状に並べて、隣接する島状半導体層２、３毎に同じ個別電極４に接続し、同じ個別電極４に接続された下の一導電型半導体層２が異なる共通電極５に接続されるように二群に分けて接続される。個別電極４を選択して電流を流すことによってページプリンタ用感光ドラムの露光用光源として用いられる。
【００１７】
島状半導体層２、３は、結晶の面方位とエッチングとの関係から一方の対向する壁面が順メサ構造で、他方の対向する壁面が逆メサ構造を有する。本発明では、一導電型半導体層２の露出部Ｒにおける逆導電型半導体層３の側壁部Ｗが逆メサとなるように形成した。すなわち、段差エッチングを行う際、ＧａＡｓは順メサ形状になるが、ＡｌＧａＡｓの＜１−１０＞方向は逆メサ形状になるエッチング液を用いて逆導電型半導体層３の側壁部Ｗを逆メサ形状にする。この逆導電型半導体層３の側壁部Ｗを逆メサ形状とすることで、個別電極４の逆導電型半導体層３上部分と一導電型半導体層２上部分を切断することができる。
【００１８】
また、一導電型半導体層２の露出部Ｒにおける逆導電型半導体層３の側壁部Ｗが逆メサとなるように形成されることから、発光層２ｃ、３ａで発光した光は側壁部Ｗの内側で反射して上方に照射される。もって、この側壁部Ｙからの光漏れがなくなる。
【００１９】
次に、上述のような半導体発光装置の製造方法を説明する。まず、単結晶基板１上に、一導電型半導体層２、逆導電型半導体層３をＭＯＣＶＤ法などで順次積層して形成する。
【００２０】
これらの半導体層２、３を形成する場合、基板温度をまず４００〜５００℃に設定して２００〜２０００Åの厚みにアモルファス状のガリウム砒素膜を形成した後、基板温度を７００〜９００℃に上げて所望厚みの半導体層２、３を形成する。
【００２１】
この場合、原料ガスとしてはＴＭＧ（（ＣＨ３ ）３ Ｇａ）、ＴＥＧ（（Ｃ２ Ｈ５ ）３ Ｇａ）、アルシン（ＡｓＨ３ ）、ＴＭＡ（（ＣＨ３ ）３ Ａ１）、ＴＥＡ（（Ｃ２ Ｈ５ ）３ Ａ１）などが用いられ、導電型を制御するためのガスとしては、シラン（ＳｉＨ４ ）、セレン化水素（Ｈ２ Ｓｅ）、ＴＭＺ（（ＣＨ３ ）３ Ｚｎ）などが用いられ、キャリアガスとしては、Ｈ２ などが用いられる。
【００２２】
次に、隣接する素子同志が電気的に分離されるように、半導体層２、３が島状にパターニングされる。このエッチングは、硫酸過酸化水素系のエッチング液を用いたウエットエッチングやＣＣ１２ Ｆ２ ガスを用いたドライエッチングなどで行われる。また、一導電型半導体層２と共通電極５との接続部が逆導電型半導体層３から露出するようにエッチングされる。このエッチングは、Ｉ２ ：ＫＩ：ＨＣｌ：Ｈ２ Ｏ＝２ｇ：４ｇ：１ｃｃ：１００ｃｃなどのエッチング液を用いたウエットエッチングで行われる。
【００２３】
次に、プラズマＣＶＤ法で、シランガス（ＳｉＨ４ ）とアンモニアガス（ＮＨ３ ）を用いて窒化シリコンから成る絶縁膜を形成してパターニングする。最後に、クロムと金を蒸着法やスパッタリング法で形成してパターニングすることにより完成する。
【００２４】
【発明の効果】
以上のように本発明に係る半導体発光装置によれば、逆導電型半導体層に接続される電極を矩形状に形成すると共に、前記一導電型半導体層の露出部における前記逆導電型半導体層の側壁部を逆メサ構造とし、この逆メサ構造部で光を反射させて上方に取り出すことから、一導電型半導体層上の電極を逆メサ部分で切断することができ、もって個別電極と共通電極が近接して配設されても短絡などを有効に防止することができる。また、一導電型半導体層の露出部近傍からの光漏れを低減でき、印画品質を向上させることができる。
【図面の簡単な説明】
【図１】本発明に係る半導体発光装置の一実施形態を示す断面図である。
【図２】本発明に係る半導体発光装置の一実施形態を示す平面図である。
【図３】従来の半導体発光装置を示す断面図である。
【図４】従来の半導体発光装置を示す平面図である。
【符号の説明】
１‥‥‥基板、２‥‥‥一導電型半導体層、３‥‥‥逆導電型半導体層、４‥‥‥個別電極、５‥‥‥共通電極、６‥‥‥絶縁膜[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device used for an exposure light source of a photosensitive drum for a page printer.
[0002]
[Prior art and problems to be solved by the invention]
A conventional semiconductor light emitting device is shown in FIGS. 3 is a cross-sectional view, and FIG. 4 is a plan view. 3 and 4, 21 is a semiconductor substrate, 22 is a one-conductivity-type semiconductor layer, 23 is a reverse-conductivity-type semiconductor layer, 24 is an individual electrode, and 25 is a common electrode.
[0003]
On the semiconductor substrate 21, a one-conductivity-type semiconductor layer 22 and a reverse-conductivity-type semiconductor layer 23 are provided so that the reverse-conductivity-type semiconductor layer 23 has a smaller area than the one-conductivity-type semiconductor layer 22. The common electrode 25 (25a, 25b) is connected to the exposed portion R of 22 and the individual electrode 24 is connected to the reverse conductivity type semiconductor layer 23. In FIG. 3, reference numeral 26 denotes a protective film made of a silicon nitride film or the like. In addition, as shown in FIG. 4, the common electrode 25 (25a, 25b) is provided in two groups so as to belong to different groups for each of the adjacent island-like semiconductor layers 22 and 23, and is connected to the adjacent island-like semiconductor layers 22 and 23. The semiconductor layers 22 and 23 are connected to the same individual electrode 24.
[0004]
In such a light emitting diode array, each light emitting diode can be made to emit light selectively by selecting a combination of the individual electrode 24 and the common electrode 25 (25a, 25b) and flowing a current.
[0005]
However, in this conventional semiconductor light emitting device, the individual electrode 24 and the common electrode 25 (25a, 25b) are provided in close proximity to each other in the exposed portion R of the one-conductivity type semiconductor layer 22. There has been a problem that short-circuiting often occurs due to burrs or dust.
[0006]
Moreover, in the conventional semiconductor light emitting device, the sidewall portion W of the reverse conductivity type semiconductor layer 23 in the exposed portion R of the island-like semiconductor layers 22 and 23 is structured to be a forward mesa. There is a problem in that light leakage occurs and the print quality deteriorates.
[0007]
The present invention has been made in view of such problems of the conventional device, and is caused by the fact that the side wall portion of the reverse conductivity type semiconductor layer in the exposed portion R of the one conductivity type semiconductor layer has a forward mesa structure. An object of the present invention is to provide a semiconductor light emitting device that eliminates short-circuiting of electrodes and deterioration of print quality.
[0008]
[Means for Solving the Problems]
In order to achieve the above object, in the semiconductor light emitting device according to the present invention, an island-shaped one-conductivity-type semiconductor layer is provided on a substrate, and a part of the one-conductivity-type semiconductor layer is formed on the one-conductivity-type semiconductor layer. In a semiconductor light emitting device in which an opposite conductivity type semiconductor layer is provided so as to be exposed, and an electrode is connected to the exposed portion of the one conductivity type semiconductor layer and the opposite conductivity type semiconductor layer, the connection is made to the opposite conductivity type semiconductor layer In addition, the electrode to be formed is formed in a rectangular shape, and the side wall portion of the opposite conductivity type semiconductor layer in the exposed portion of the one conductivity type semiconductor layer has an inverted mesa structure, and light is reflected by the inverted mesa structure portion and extracted upward. It is characterized by that.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a sectional view showing an embodiment of a semiconductor light emitting device according to the present invention, and FIG. 2 is a plan view.
[0010]
1 and 2, 1 is a substrate, 2 is a one-conductivity-type semiconductor layer, 3 is a reverse-conductivity-type semiconductor layer, 4 is an individual electrode, 5 is a common electrode, and 6 is an insulating film.
[0011]
The substrate 1 is made of a single crystal semiconductor substrate such as silicon (Si) or gallium arsenide (GaAs) or a single crystal insulating substrate such as sapphire (Al 2 O 3 ). In the case of a single crystal semiconductor substrate, a substrate in which the (100) plane is turned off by 2 to 7 degrees in the <011> direction is preferably used. In the case of sapphire, a C-plane substrate is preferably used.
[0012]
The one conductivity type semiconductor layer 2 includes a buffer layer 2a, an ohmic contact layer 2b, and a light emitting layer 2c. The buffer layer 2a is formed to a thickness of about 2 to 4 μm, the ohmic contact layer 2b is formed to a thickness of about 0.1 to 1.0 μm, and the cladding layer 2c is formed to a thickness of about 0.2 to 0.4 μm. The The buffer layer 2a and the ohmic contact layer 2b are formed of gallium arsenide or the like, and the light emitting layer 2c is formed of aluminum gallium arsenide or the like. The ohmic contact layer 2b contains about 1 × 10 18 to 10 22 atoms / cm 3 of one conductivity type semiconductor impurity such as silicon and selenium, and the cladding layer 2c contains 1 × 10 16 one conductivity type semiconductor impurity such as silicon and selenium. About 10 19 atoms / cm 3 . The buffer layer 2a is provided in order to prevent misfit dislocation based on mismatch of lattice constants between the substrate 1 and the semiconductor layer, and does not need to contain semiconductor impurities.
[0013]
The reverse conductivity type semiconductor layer 3 includes a light emitting layer 3a, a second cladding layer 3b, and a second ohmic contact layer 3c. The light emitting layer 3a and the second cladding layer 3b are formed to a thickness of about 0.2 to 0.4 μm, and the ohmic contact layer 3c is formed to a thickness of about 0.01 to 0.1 μm. The light emitting layer 3a and the second cladding layer 3b are made of aluminum gallium arsenide or the like, and the second ohmic contact layer 3c is made of gallium arsenide or the like.
[0014]
The light emitting layer 3a and the second cladding layer 3b have different mixed crystal ratios of aluminum arsenide (AlAs) and gallium arsenide (GaAs) in consideration of the electron confinement effect and the light extraction effect. The light emitting layer 3a and the second cladding layer 3b contain about 1 × 10 16 to 10 19 reverse conductive semiconductor impurities such as zinc (Zn), and the second ohmic contact layer 3c is a reverse conductive semiconductor impurity such as zinc. About 1 × 10 19 to 10 22 .
[0015]
The insulating film 6 is made of silicon nitride or the like and has a thickness of about 3000 mm. The individual electrode 4 and the common electrode 5 are made of gold / chromium (Au / Cr) or the like and are formed with a thickness of about 1 μm.
[0016]
In the semiconductor light emitting device of the present invention, as shown in FIG. 2, island-like semiconductor layers 2 and 3 comprising a one-conductivity-type semiconductor layer 2 and a reverse-conductivity-type semiconductor layer 3 are arranged in a line on a substrate 1 and adjacent islands are arranged. Each of the semiconductor layers 2 and 3 is connected to the same individual electrode 4 and is connected in two groups so that the lower one conductive semiconductor layer 2 connected to the same individual electrode 4 is connected to a different common electrode 5. The By selecting an individual electrode 4 and passing an electric current, it is used as an exposure light source for a photosensitive drum for a page printer.
[0017]
In the island-like semiconductor layers 2 and 3, one opposing wall surface has a forward mesa structure and the other opposing wall surface has an inverted mesa structure because of the relationship between crystal plane orientation and etching. In the present invention, the sidewall portion W of the reverse conductivity type semiconductor layer 3 in the exposed portion R of the one conductivity type semiconductor layer 2 is formed to be a reverse mesa. That is, when performing step etching, the side wall W of the reverse conductivity type semiconductor layer 3 is formed in a reverse mesa shape using an etching solution in which GaAs has a forward mesa shape, but the <1-10> direction of AlGaAs has a reverse mesa shape. To. By making the side wall W of the reverse conductivity type semiconductor layer 3 into an inverted mesa shape, the upper portion of the individual electrode 4 on the reverse conductivity type semiconductor layer 3 and the upper portion of the one conductivity type semiconductor layer 2 can be cut.
[0018]
Further, since the side wall portion W of the reverse conductivity type semiconductor layer 3 in the exposed portion R of the one conductivity type semiconductor layer 2 is formed as a reverse mesa, the light emitted from the light emitting layers 2c and 3a is emitted from the side wall portion W. Reflected inside and irradiated upward. Accordingly, light leakage from the side wall portion Y is eliminated.
[0019]
Next, a method for manufacturing the semiconductor light emitting device as described above will be described. First, a one-conductivity-type semiconductor layer 2 and a reverse-conductivity-type semiconductor layer 3 are sequentially stacked on a single crystal substrate 1 by MOCVD or the like.
[0020]
When these semiconductor layers 2 and 3 are formed, the substrate temperature is first set to 400 to 500 ° C., an amorphous gallium arsenide film is formed to a thickness of 200 to 2000 mm, and then the substrate temperature is raised to 700 to 900 ° C. Thus, the semiconductor layers 2 and 3 having a desired thickness are formed.
[0021]
In this case, as source gases, TMG ((CH 3 ) 3 Ga), TEG ((C 2 H 5 ) 3 Ga), arsine (AsH 3 ), TMA ((CH 3 ) 3 A1), TEA ((C 2 H 5 ) 3 A1) and the like are used, and silane (SiH 4 ), hydrogen selenide (H 2 Se), TMZ ((CH 3 ) 3 Zn), and the like are used as the gas for controlling the conductivity type. As the carrier gas, H 2 or the like is used.
[0022]
Next, the semiconductor layers 2 and 3 are patterned in an island shape so that adjacent elements are electrically separated. This etching is performed by wet etching using a sulfuric acid hydrogen peroxide-based etching solution or dry etching using CC1 2 F 2 gas. Further, etching is performed so that the connection portion between the one-conductivity-type semiconductor layer 2 and the common electrode 5 is exposed from the reverse-conductivity-type semiconductor layer 3. This etching is performed by wet etching using an etchant such as I 2 : KI: HCl: H 2 O = 2 g: 4 g: 1 cc: 100 cc.
[0023]
Next, an insulating film made of silicon nitride is formed and patterned by plasma CVD using silane gas (SiH 4 ) and ammonia gas (NH 3 ). Finally, chromium and gold are formed by vapor deposition or sputtering and patterned.
[0024]
【The invention's effect】
As described above, according to the semiconductor light emitting device of the present invention, the electrode connected to the reverse conductivity type semiconductor layer is formed in a rectangular shape, and the reverse conductivity type semiconductor layer in the exposed portion of the one conductivity type semiconductor layer is formed. Since the side wall portion has an inverted mesa structure and light is reflected by the inverted mesa structure portion and extracted upward, the electrode on the one-conductivity-type semiconductor layer can be cut at the inverted mesa portion. Even if they are arranged close to each other, a short circuit or the like can be effectively prevented. In addition, light leakage from the vicinity of the exposed portion of the one conductivity type semiconductor layer can be reduced, and the printing quality can be improved.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor light emitting device according to the present invention.
FIG. 2 is a plan view showing an embodiment of a semiconductor light emitting device according to the present invention.
FIG. 3 is a cross-sectional view showing a conventional semiconductor light emitting device.
FIG. 4 is a plan view showing a conventional semiconductor light emitting device.
[Explanation of symbols]
1 ... substrate, 2 ... one conductivity type semiconductor layer, 3 ... reverse conductivity type semiconductor layer, 4 ... individual electrode, 5 ... common electrode, 6 ... insulation film

Claims (1)

基板上に島状の一導電型半導体層を設けると共に、この一導電型半導体層上にこの一導電型半導体層の一部が露出するように逆導電型半導体層を設け、この一導電型半導体層の露出部と前記逆導電型半導体層上に電極を接続して設けた半導体発光装置において、前記逆導電型半導体層に接続される電極を矩形状に形成すると共に、前記一導電型半導体層の露出部における前記逆導電型半導体層の側壁部を逆メサ構造とし、この逆メサ構造部で光を反射させて上方に取り出すことを特徴とする半導体発光装置。An island-shaped one-conductivity-type semiconductor layer is provided on the substrate, and a reverse-conductivity-type semiconductor layer is provided on the one-conductivity-type semiconductor layer so that a part of the one-conductivity-type semiconductor layer is exposed. In the semiconductor light emitting device provided by connecting an electrode on the exposed portion of the layer and the reverse conductivity type semiconductor layer, the electrode connected to the reverse conductivity type semiconductor layer is formed in a rectangular shape and the one conductivity type semiconductor layer A semiconductor light emitting device characterized in that a side wall portion of the reverse conductivity type semiconductor layer in the exposed portion has a reverse mesa structure, and light is reflected by the reverse mesa structure portion and extracted upward .
JP27689198A 1998-09-30 1998-09-30 Semiconductor light emitting device Expired - Fee Related JP3623110B2 (en)

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JP2680804B2 (en) * 1982-07-13 1997-11-19 日本電気株式会社 Semiconductor laser
JPS6281782A (en) * 1985-10-07 1987-04-15 Fujitsu Ltd Semiconductor light emitting device
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