JP3561231B2 - Manufacturing method of wiring board - Google Patents

Manufacturing method of wiring board Download PDF

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Publication number
JP3561231B2
JP3561231B2 JP2000355859A JP2000355859A JP3561231B2 JP 3561231 B2 JP3561231 B2 JP 3561231B2 JP 2000355859 A JP2000355859 A JP 2000355859A JP 2000355859 A JP2000355859 A JP 2000355859A JP 3561231 B2 JP3561231 B2 JP 3561231B2
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Japan
Prior art keywords
wiring conductor
metal layer
platinum group
wiring
nickel
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JP2000355859A
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Japanese (ja)
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JP2002161370A (en
Inventor
康雄 福田
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15192Resurf arrangement of the internal vias
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/162Disposition
    • H01L2924/16251Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate

Description

【0001】
【発明の属する技術分野】
本発明は、半導体素子や容量素子、抵抗器等の電子部品を塔載する配線基板であって、その表面の配線導体に無電解法によってめっき層を被着させて成る配線基板、及びその製造方法に関するものである。
【0002】
【従来の技術】
従来、半導体素子や容量素子、抵抗器等の電子部品が塔載される配線基板は、一般に、酸化アルミニウム質焼結体から成り電子部品の搭載部を有する略四角板形状の絶縁体と、絶縁体の搭載部から外部にかけて導出形成されたタングステン、モリブデン、マンガン等の高融点金属材料から成る複数個の配線層とから構成されており、絶縁体の搭載部に半導体素子や容量素子、抵抗器等の電子部品を塔載するとともに電子部品の各電極を配線層に半田やボンディングワイヤ等の導電性接続材を介して電気的に接続するようになっている。
【0003】
このような配線基板は、配線導体の外部に導出されている部位を外部電気回路基板の回路配線に半田等を介し接続することによって外部電気回路基板上に実装され、同時に配線基板に塔載されている電子部品の各電極が所定の外部電気回路に電気的に接続されることとなる。
【0004】
また、このような配線基板は、配線層の表面にニッケル、銅等のめっき金属層が被着形成され、高融点金属材料から成る配線層に対する半田やボンディングワイヤの濡れ性、ボンディング性等を良好としている。
【0005】
一方、このニッケル、銅等のめっき金属層を被着形成する方法としては、配線基板の小型化に伴う配線導体の高密度化によってめっき電力供給用の引き出し線の形成が困難なことから、引き出し線が不要である無電解法が多用されつつある。
【0006】
このような無電解法による配線導体上へのめっき金属層の被着形成は、タングステン、モリブデン、マンガン等の高融点金属がニッケル、銅等の金属の無電解法(自己触媒型)による還元析出に対して触媒活性を有しないことから、通常、まず配線導体の表面にパラジウム、白金等の白金族元素を被着させて触媒活性を付与した後、配線導体を無電解めっき液中に浸漬してめっき金属層を被着させるという方法が採用され、一般に、以下のようにして行われている。即ち、
まず、表面に配線導体を有する絶縁基体を準備し、
次に、塩化パラジウム等の白金族元素の供給源となる金属化合物と塩化鉛等の鉛化合物とを主成分とする水溶液に水酸化ナトリウム、水酸化カリウム等のpH調整剤等の添加剤を添加して成る活性液中に配線導体を浸漬し、配線導体の表面にパラジウム等の白金族金属を析出被着させ、
次に、硫酸ニッケル、硫酸銅等のめっき金属の供給源となる金属化合物と、次亜リン酸ナトリウム、ジメチルアミンボラン、ホルマリン等の還元剤とを主成分とする水溶液に錯化剤、pH緩衝剤、安定剤等を添加して成る無電解めっき液に浸漬し、配線導体表面に被着させたパラジウム等の白金族金属の触媒活性作用でニッケル、銅等の金属を還元析出させることにより、配線導体表面のみに選択的にめっき金属層を被着形成する。
【0007】
なお、上記活性液中に含有される鉛化合物は、高融点金属から成る配線導体を活性液中に浸漬したときに最初に配線導体の表面に吸着し、配線導体表面をパラジウム等の白金族元素の析出被着に対して感受性化する作用を有し、配線導体へのパラジウム、白金等の白金族元素の析出被着を容易、かつ均一なものとしている。また、配線導体の表面に被着されためっき金属層の内部には、上記配線導体の表面に被着したパラジウム、白金等の白金族元素と、鉛とが残留し、含有されている。
【0008】
【発明が解決しようとする課題】
従来の配線基板は、上記のようにめっき金属層中に鉛が含有されることから、ニッケル、銅等のめっき金属層に熱が加わったときに鉛がめっき金属層の表面に移動拡散して酸化し、しみ状の変色を生じさせるという機能上の不具合や、めっき金属層中の鉛により人体に害を及ぼすという環境、安全上の不具合を生じてしまう、という問題があった。
【0009】
また、上記問題を解決するために、活性液中に鉛を非含有とすることが考えられるが、この場合、高融点金属から成る配線導体の表面はパラジウム、白金等の白金族元素の析出被着に対する感受性が不十分であることから、配線導体の表面に白金族元素をムラなくかつ強固に析出被着させることができず、その結果、めっき金属層にムラ、カケ、フクレ等の不具合を生じるという問題を誘発してしまう。
【0010】
本発明は、上記問題点を解決するために案出されたものであり、その目的は、配線導体上に無電解めっき金属層が均一かつ強固に被着しているとともに、このめっき金属層中に鉛が含有されず、しみ状変色等の機能上の不具合を生じたり、人体に害を及ぼしたりすることのない配線基板を提供することにある。
【0012】
【課題を解決するための手段】
本発明の配線基板の製造方法は、(1)表面に高融点金属から成る配線導体が形成された絶縁体を準備する工程と、(2)前記配線導体を、白金族元素とオキシカルボン酸とを主成分とする活性液中に浸漬し、配線導体の表面に白金族元素を被着させて触媒活性を付与する工程と、(3)前記配線導体をニッケル化合物およびジメチルアミンボランを主成分とする無電解めっき液中に浸漬し、配線導体の表面にニッケル−ホウ素合金からなる無電解めっき金属層を被着させる工程とからなることを特徴とするものである。
【0013】
本発明の配線基板の製造方法によれば、配線導体に被着させた無電解めっき金属層の内部に、無電解めっき金属層を被着させるのに必要な白金族元素は含有されるが、鉛を非含有とできることから、白金族元素の作用により配線導体に良好な触媒活性が付与されて配線導体にのみ無電解めっき金属層を均一に被着させることができ、鉛がめっき金属層中に含有されることに起因するめっき金属層のしみ状変色や人体に対する害という問題をも効果的に防止することができる。
【0014】
【発明の実施の形態】
次に、本発明を添付図面に基づき詳細に説明する。図1は、本発明に係わる配線基板を半導体素子を収容する半導体素子収納用パッケージに適用した場合の一実施例を示す断面図であり、1は絶縁体、2は配線導体である。この絶縁体1と配線導体2とで半導体素子3を搭載するための配線基板4が形成される。
【0015】
前記絶縁体1は、酸化アルミニウム質焼結体、窒化アルミニウム質焼結体、ムライト質焼結体等、炭化珪素質焼結体等の電気絶縁材料から成り、その上面に半導体素子3を塔載する搭載部を有し、該半導体素子3が搭載される搭載部から下面にかけて多数のタングステン、モリブデン、マンガン等の高融点金属から成る配線導体2が被着形成されている。
【0016】
前記絶縁体1は、搭載部に半導体素子3が搭載されるとともに半導体素子3の各電極は搭載部に露出している配線導体2に半田ボール5を介して電気的に接続され、また配線導体2の絶縁体1下面に導出されている部位は外部電気回路基板の回路配線に半田等を介して電気的に接続される。
【0017】
前記配線導体2は、図2に断面図で示すように、その表面に無電解法によりめっき金属層6が被着されている。
【0018】
前記めっき金属層6は、配線導体2に対する半田の濡れ性、接合強度、ボンディング性を良好なものとする作用をなし、ニッケル−ホウ素合金から成る。
【0019】
本発明においては、前記めっき金属層6の内部に白金族元素を含有し、鉛を含有していないようにできることが重要である。
【0020】
これは、ニッケル−ホウ素めっき層のめっき金属層6に含有される鉛が熱等によりめっき金属層6の表面に移動拡散してしみ状変色を生じたり、人体に害を及ぼしたりすることを防止するためである。この場合、パラジウム、白金等の白金族元素は無電解法でめっき金属層6を配線導体2上に被着させるために必要な触媒付与の作用を有し、配線導体2表面に析出被着されるとともにめっき金属層6中に残留して含有されるが、白金族元素は鉛に比べて酸化しにくく、また毒性も極めて小さいことから、めっき金属層6表面に移動拡散してしみ状変色を生じたり、人体に害を及ぼしたりするようなことはない。
【0021】
なお、前記白金族元素は、配線導体2の表面に沿って膜状に被着している必要はなく、配線導体を形成する高融点金属の結晶粒の粒界に沿った部位等、ほぼ一定の間隔をおいてムラなく粒状、断片状等に被着していればよく、この白金族元素を基点としてめっき金属層6を配線導体2の表面に均一に被着させることができる。
【0022】
また、白金族元素としては、パラジウムまたは白金、特にパラジウムが好ましく、高融点金属から成る配線導体2の表面に良好に被着するとともに、ニッケル、銅等の金属の無電解法による被着形成に対して良好な触媒活性を付与することができる。
【0023】
更に、前記配線基板4は、ニッケル−ホウ素合金から成るめっき金属層6の表面を金めっき層(非図示)で被覆するようにしておくと、めっき金属層6の酸化腐食を効果的に防止することができるとともに、配線導体2に対する半田の濡れ性をより一層良好なものとすることができる。従って配線基板4は、めっき金属層6の表面をさらに金めっき層で被覆するようにしておくことが好ましい。この場合、金めっき層は、その厚さが0.03μm未満ではめっき金属層を被覆する効果が弱く、また、0.8μmを超えると半田中の錫と金との間で脆い金属間化号物が大量に生成し、半田の接合強度が劣化する傾向がある。従って、金めっき層は、その厚さを0.03μm〜0.8μmの範囲としておくことが好ましい。
【0024】
かくして本発明の配線基板によれば、絶縁体1の搭載部に半導体素子3を搭載するとともに半導体素子3の各電極を配線層2に半田ボール5を介して電気的に接続し、しかる後、絶縁体1の上面に金属やセラミックスから成る椀状の蓋体9をガラスや樹脂、ロウ材等の封止材を介して接合させ、絶縁体1と蓋体7とから成る容器内部に半導体素子3を気密に収容することによって製品としての半導体装置が完成する。
【0025】
次に、上述の配線基板の製造方法について図3(a)乃至(c)に基づいて説明する。なお、図1および図2と同一箇所には同一符号が付してある。
【0026】
まず、図3(a)に示す表面に高融点金属から成る配線導体2を設けた絶縁体1を準備する。
【0027】
前記絶縁体1は、酸化アルミニウム質焼結体、窒化アルミニウム質焼結体、ムライト質焼結体炭化珪素質焼結体等の電気絶縁材料から成る略四角板であり、その上面に半導体素子を搭載するための搭載部を有し、該搭載部に半導体素子が搭載される。
【0028】
前記絶縁体1は、例えば、酸化アルミニウム質焼結体から成る場合には、酸化アルミニウム、酸化珪素、酸化カルシウム、酸化マグネシウム等の原料粉末に適当な有機バインダ、溶剤を添加混合して泥漿状のセラミックスラリーと成すとともにこのセラミックスラリーを従来周知のドクターブレード法やカレンダーロール法等のシート成形技術を採用しシート状と成すことによってセラミックグリーンシート(セラミック生シート)を得て、しかる後、このセラミックグリーンシートを切断加工や打ち抜き加工により適当な形状とするとともにこれを複数枚積層し、最後にこの積層されたセラミックグリーンシートを還元雰囲気中、約1600℃の温度で焼成することによって製作される。
【0029】
前記配線導体2は、タングステン、モリブデン、マンガン等の高融点金属材料から成り、タングステン等の高融点金属粉末に適当な有機バインダや溶剤を添加混合して得た金属ペーストを絶縁体1と成るセラミックグリーンシートに予め従来周知のスクリーン印刷法により所定パターンに印刷塗布しておくことによって絶縁体1の搭載部から下面にかけて被着形成される。
【0030】
次に、配線導体2を、パラジウム、白金、ロジウム、ルテニウム、イリジウムから構成される白金族元素の少なくとも1種とクエン酸、リンゴ酸等のオキシカルボン酸の少なくとも1種とを主成分とする活性液中に浸漬し、図3(b)に示す如く、配線導体の表面に白金族元素8を被着させて触媒活性を付与する。ただし、図中、白金族元素8は、説明のため実際のスケールよりも誇張して図示している。
【0031】
前記活性液において、白金族元素は配線導体2の表面に被着することにより配線導体2の表面に触媒活性を付与する作用をなし、後の工程でめっき金属層6を配線導体2の表面に選択的に均一に被着させることを可能としている。
【0032】
また前記オキシカルボン酸は、活性液中に鉛を含有させることなく配線導体2の表面に白金族元素8を被着させることを可能とする、という重要な作用を有している。即ち、前記クエン酸等のオキシカルボン酸は、タングステン等の高融点金属から成る配線導体2の表面に作用し、配線導体2表面部分の高融点金属を酸化、錯体化し活性液中に溶出させるとともに、その溶出跡にタングステン等と置換するようにして白金族元素を還元析出させる作用をなす。これは、このクエン酸等の有機酸の金属に対する錯体の安定度が白金族元素等の活性化剤に対する場合よりもタングステン等の高融点金属に対する場合の方が大きいためであると推定される。そして、このようにオキシカルボン酸を活性液中に添加しておくことにより、活性液中に感受性化剤として鉛を添加することなく、配線導体2の表面に白金族元素を容易、かつ均一に被着させることが可能となる。
【0033】
前記活性液は、例えば白金族元素としてパラジウムを用いる場合であれば、塩化パラジウム、硫酸パラジウム等のパラジウム化合物と、クエン酸、リンゴ酸等のオキシカルボン酸(ヒドロキシ基を有するカルボン酸)とを主成分とする水溶液に、塩酸、硼弗化水素酸、水酸化ナトリウム、水酸化カリウム等のpH調整剤等の添加剤を添加したものを用いることができる。なお、活性液中のパラジウム濃度は、高濃度になるとパラジウムの偏析等の不具合を誘発するおそれがあることから、約20〜80ppm程度としておくことが好ましい。
【0034】
また、前記活性液は、オキシカルボン酸の作用によるタングステンとパラジウムとの置換を効果的に行わせるために、その液性が酸性であることが好ましく、pH1〜3の範囲が特に好ましい。活性液のpHを所定の範囲とするためには、前記塩酸、硼弗化水素酸、水酸化ナトリウム、水酸化カリウム等のpH調整剤を活性液中に適宜添加して調整すればよい。
【0035】
そして次に、前記配線導体2を無電解めっき液中に浸漬し、前記白金族元素を触媒として、配線導体2の表面に無電解めっき金属層6を析出、被着させる。
【0036】
前記めっき金属層は、ニッケル−ホウ素合金からなり、配線導体2に対する半田の濡れ性、ボンディング性等を良好なものとする作用をなす。
【0037】
前記無電解めっき液は、無電解めっき金属層6がニッケル−ホウ素合金からなるため、硫酸ニッケル等のニッケル供給源となるニッケル化合物と、ジメチルアミンボランからなるホウ素系の還元剤とを主成分とし、錯化剤、安定剤、pH緩衝剤等を添加して成る無電解ニッケルめっき液を用いることができる。この場合、無電解ニッケルめっき液中のニッケル(イオン)は、配線導体の表面に予め被着させた白金族元素8の触媒作用で還元剤が酸化分解されるのにともなって金属ニッケルに還元され、還元剤の分解に伴って生じるホウ素とともに配線導体2の表面に共析被着して、ニッケル−ホウ素合金から成るめっき金属層6を形成する。なお、一旦、配線導体2の表面にニッケル(ホウ素合金)が被着し始めると、この被着したニッケル自身が後続のニッケルの還元剤による還元、析出に対して触媒活性を有することから、めっき液中に触媒である白金族元素が露出、接触していなくても、ニッケルの還元析出、被着する反応を継続して行わせることができる。
【0038】
また前記めっき金属層6の表面に金めっき層(非図示)を被着させる場合には、めっき金属層6を被着させた配線導体2を、シアン化金カリウム等の金化合物と、エチレンジアミン四酢酸(EDTA)等の錯化剤とを主成分とする置換型の無電解金めっき液中に所定時間浸漬する方法を用いることができる。
【0039】
なお、本発明の配線基板は上述の実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能である。例えば、上述の実施例では本発明の配線基板を半導体素子を収容する半導体素子収納用パッケージに適用したが、混成集積回路基板等の他の用途に適用しても良い。
【0040】
【発明の効果】
本発明の配線基板の製造方法によれば、配線導体に被着させた無電解めっき金属層の内部に、無電解めっき金属層を被着させるのに必要な白金族元素は含有されるが、鉛は非含有であることから、白金族元素の作用により配線導体に良好な触媒活性が付与されて配線導体にのみ無電解めっき金属層を均一に被着させることができ、かつ、鉛がめっき金属層中に含有されることに起因するめっき金属層のしみ状変色や人体に対する害という問題の発生を防止することができる。
【図面の簡単な説明】
【図1】本発明の配線基板の一実施例を示す断面図である。
【図2】図1に示す配線基板の要部拡大図である。
【図3】(a)乃至(c)は図1に示す配線基板の製造方法を説明するための各工程毎の要部拡大断面図である。
【符号の説明】
1・・・・絶縁体
2・・・・配線導体
3・・・・半導体素子
4・・・・配線基板
5・・・・半田ボール
6・・・・めっき金属層
7・・・・蓋体
8・・・・白金族元素
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a wiring board on which electronic components such as a semiconductor element, a capacitance element, and a resistor are mounted, and a wiring board formed by applying a plating layer to a wiring conductor on the surface by an electroless method, and manufacturing the same. It is about the method.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, a wiring board on which electronic components such as a semiconductor element, a capacitor element, and a resistor are mounted is generally formed of an aluminum oxide sintered body and having a substantially square plate-shaped insulator having a mounting portion for the electronic component, and an insulating member. It consists of a plurality of wiring layers made of a refractory metal material such as tungsten, molybdenum, and manganese, which are led out from the mounting part of the body to the outside, and semiconductor elements, capacitance elements, and resistors are mounted on the insulating mounting part. And the like, and each electrode of the electronic component is electrically connected to a wiring layer via a conductive connecting material such as solder or a bonding wire.
[0003]
Such a wiring board is mounted on the external electric circuit board by connecting a portion led out of the wiring conductor to circuit wiring of the external electric circuit board via solder or the like, and is simultaneously mounted on the wiring board. Each of the electrodes of the electronic component is electrically connected to a predetermined external electric circuit.
[0004]
Further, such a wiring board has a plating metal layer made of nickel, copper or the like adhered to the surface of the wiring layer, and has good wettability and bonding property of solder and bonding wires with respect to the wiring layer made of a high melting point metal material. And
[0005]
On the other hand, as a method of applying and forming a plating metal layer of nickel, copper, etc., it is difficult to form a lead wire for supplying power for plating due to the high density of wiring conductors accompanying the miniaturization of a wiring board. Electroless methods that do not require wires are being used extensively.
[0006]
Such deposition of a plating metal layer on a wiring conductor by an electroless method is performed by reductive precipitation of a metal such as nickel, copper or the like by a high melting point metal such as tungsten, molybdenum or manganese by an electroless method (autocatalytic type). Since it does not have catalytic activity, usually, first, a platinum group element such as palladium or platinum is applied to the surface of the wiring conductor to impart catalytic activity, and then the wiring conductor is immersed in an electroless plating solution. A method of applying a plating metal layer by using a method is adopted, and is generally performed as follows. That is,
First, prepare an insulating substrate having a wiring conductor on the surface,
Next, an additive such as a pH adjuster such as sodium hydroxide and potassium hydroxide is added to an aqueous solution mainly containing a metal compound serving as a supply source of a platinum group element such as palladium chloride and a lead compound such as lead chloride. The wiring conductor is immersed in an active solution formed by depositing and depositing a platinum group metal such as palladium on the surface of the wiring conductor,
Next, a complexing agent, a pH buffer, and a metal compound serving as a supply source of a plating metal such as nickel sulfate and copper sulfate and a reducing agent such as sodium hypophosphite, dimethylamine borane, and formalin are used as main components. Agents, stabilizers, etc., are immersed in an electroless plating solution, and nickel, copper and other metals are reduced and precipitated by the catalytic activity of platinum group metals such as palladium applied to the wiring conductor surface, A plating metal layer is selectively formed only on the surface of the wiring conductor.
[0007]
The lead compound contained in the above-mentioned active solution is first adsorbed on the surface of the wiring conductor when the wiring conductor made of a high melting point metal is immersed in the active solution, and the surface of the wiring conductor becomes a platinum group element such as palladium. Has the effect of sensitizing the deposition and deposition of platinum group elements such as palladium and platinum on the wiring conductor, and makes deposition and deposition easy and uniform. Further, in the inside of the plating metal layer adhered to the surface of the wiring conductor, a platinum group element such as palladium and platinum adhered to the surface of the wiring conductor and lead remain and are contained.
[0008]
[Problems to be solved by the invention]
Since the conventional wiring board contains lead in the plating metal layer as described above, when heat is applied to the plating metal layer such as nickel and copper, the lead moves and diffuses to the surface of the plating metal layer. There have been problems such as functional inconvenience of oxidizing and causing stain-like discoloration, and environmental and safety inconvenience that humans are harmed by lead in the plated metal layer.
[0009]
In order to solve the above problem, it is conceivable that lead is not contained in the active liquid. In this case, however, the surface of the wiring conductor made of a high melting point metal is coated with a platinum group element such as palladium or platinum. Due to insufficient sensitivity to deposition, it is not possible to uniformly and firmly deposit and deposit the platinum group element on the surface of the wiring conductor, and as a result, defects such as unevenness, This can cause problems.
[0010]
The present invention has been devised in order to solve the above problems, and an object of the present invention is to provide an electroless plating metal layer that is uniformly and firmly adhered on a wiring conductor, and that the plating metal layer It is an object of the present invention to provide a wiring board which does not contain lead and does not cause functional defects such as spot-like discoloration and does not harm the human body.
[0012]
[Means for Solving the Problems]
The method of manufacturing a wiring board according to the present invention includes: (1) a step of preparing an insulator having a wiring conductor made of a high melting point metal formed on a surface; and (2) a step of preparing the wiring conductor by using a platinum group element and oxycarboxylic acid. (3) immersing the wiring conductor in an active liquid, and applying a platinum group element to the surface of the wiring conductor to impart catalytic activity; and (3) the wiring conductor is mainly composed of a nickel compound and dimethylamine borane. Dipping in an electroless plating solution to form an electroless plating metal layer made of a nickel-boron alloy on the surface of the wiring conductor.
[0013]
According to the method for manufacturing a wiring board of the present invention, the platinum group element necessary for applying the electroless plating metal layer is contained inside the electroless plating metal layer applied to the wiring conductor, Since lead-free material can be used, good catalytic activity is imparted to the wiring conductor by the action of the platinum group element, and the electroless plating metal layer can be uniformly applied only to the wiring conductor, and lead is contained in the plating metal layer. The problem of discoloration of the plated metal layer and harm to the human body caused by the inclusion in the plating metal layer can also be effectively prevented.
[0014]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing one embodiment in which a wiring board according to the present invention is applied to a package for housing a semiconductor element for housing a semiconductor element, wherein 1 is an insulator, and 2 is a wiring conductor. The insulator 1 and the wiring conductor 2 form a wiring board 4 on which the semiconductor element 3 is mounted.
[0015]
The insulator 1 is made of an electrically insulating material such as a silicon carbide sintered body such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, etc., and the semiconductor element 3 is mounted on the upper surface thereof. A large number of wiring conductors 2 made of a refractory metal such as tungsten, molybdenum, and manganese are formed from the mounting portion on which the semiconductor element 3 is mounted to the lower surface.
[0016]
The insulator 1 has a semiconductor element 3 mounted on a mounting portion, and each electrode of the semiconductor element 3 is electrically connected to a wiring conductor 2 exposed on the mounting portion via a solder ball 5. The portion led out to the lower surface of the insulator 2 is electrically connected to the circuit wiring of the external electric circuit board via solder or the like.
[0017]
As shown in the cross-sectional view of FIG. 2, the wiring conductor 2 has a plating metal layer 6 applied to the surface thereof by an electroless method.
[0018]
The plating metal layer 6 functions to improve the wettability, bonding strength, and bonding property of the solder to the wiring conductor 2 and is made of a nickel-boron alloy.
[0019]
In the present invention, it is important that the plating metal layer 6 contains a platinum group element and does not contain lead.
[0020]
This prevents lead contained in the plating metal layer 6 of the nickel-boron plating layer from moving and diffusing to the surface of the plating metal layer 6 due to heat or the like, thereby causing stain-like discoloration or harm to the human body. To do that. In this case, a platinum group element such as palladium or platinum has a function of providing a catalyst necessary for depositing the plating metal layer 6 on the wiring conductor 2 by an electroless method, and is deposited and deposited on the surface of the wiring conductor 2. However, since the platinum group element is harder to oxidize than lead and has extremely low toxicity, it migrates and diffuses to the surface of the plating metal layer 6 to cause stain discoloration. It does not occur or harm the human body.
[0021]
The platinum group element does not need to be applied in a film form along the surface of the wiring conductor 2, and is substantially constant, such as a portion along a grain boundary of crystal grains of a high melting point metal forming the wiring conductor. It is sufficient that the plating metal layer 6 is uniformly deposited on the surface of the wiring conductor 2 with the platinum group element as a base point, as long as the plating metal layer 6 is applied uniformly and in a granular or fragmented manner.
[0022]
Further, as the platinum group element, palladium or platinum, particularly palladium, is preferable, and is suitable for forming a good adhesion on the surface of the wiring conductor 2 made of a high melting point metal, such as nickel and copper, by electroless method. Good catalytic activity can be imparted to them.
[0023]
Furthermore, when the surface of the plating metal layer 6 made of a nickel-boron alloy is covered with a gold plating layer (not shown), the wiring board 4 effectively prevents oxidation corrosion of the plating metal layer 6. And the wettability of the solder to the wiring conductor 2 can be further improved. Therefore, it is preferable that the surface of the plating metal layer 6 of the wiring board 4 is further covered with a gold plating layer. In this case, if the thickness of the gold plating layer is less than 0.03 μm, the effect of covering the plating metal layer is weak, and if it exceeds 0.8 μm, the brittle intermetallic layer between the tin and gold in the solder. Objects tend to be generated in large quantities and the solder bonding strength tends to deteriorate. Therefore, it is preferable that the thickness of the gold plating layer be in the range of 0.03 μm to 0.8 μm.
[0024]
Thus, according to the wiring board of the present invention, the semiconductor element 3 is mounted on the mounting portion of the insulator 1 and each electrode of the semiconductor element 3 is electrically connected to the wiring layer 2 via the solder ball 5. A bowl-shaped lid 9 made of metal or ceramics is joined to the upper surface of the insulator 1 via a sealing material such as glass, resin, or brazing material. The semiconductor device as a product is completed by housing 3 in an airtight manner.
[0025]
Next, a method for manufacturing the above-described wiring board will be described with reference to FIGS. 1 and 2 have the same reference numerals.
[0026]
First, an insulator 1 having a wiring conductor 2 made of a high melting point metal provided on a surface shown in FIG. 3A is prepared.
[0027]
The insulator 1 is a substantially square plate made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, and a silicon carbide sintered body. It has a mounting part for mounting, and the semiconductor element is mounted on the mounting part.
[0028]
In the case where the insulator 1 is made of, for example, an aluminum oxide sintered body, a suitable organic binder and a solvent are added to a raw material powder such as aluminum oxide, silicon oxide, calcium oxide, and magnesium oxide, and the mixture is mixed to form a slurry. A ceramic green sheet (green ceramic sheet) is obtained by forming a ceramic slurry and forming the ceramic slurry into a sheet by employing a sheet forming technique such as a doctor blade method or a calendar roll method which is well known in the art. The green sheet is formed by cutting or punching into an appropriate shape, laminating a plurality of the green sheets, and finally firing the laminated ceramic green sheets at a temperature of about 1600 ° C. in a reducing atmosphere.
[0029]
The wiring conductor 2 is made of a high melting point metal material such as tungsten, molybdenum, manganese or the like, and a metal paste obtained by adding a suitable organic binder or a solvent to a high melting point metal powder such as tungsten is mixed with a ceramic as an insulator 1. The green sheet is printed and applied in a predetermined pattern in advance by a well-known screen printing method so that the green sheet is adhered and formed from the mounting portion of the insulator 1 to the lower surface.
[0030]
Next, the wiring conductor 2 is made to have an activity mainly composed of at least one of the platinum group elements composed of palladium, platinum, rhodium, ruthenium, and iridium and at least one of oxycarboxylic acids such as citric acid and malic acid. As shown in FIG. 3B, the substrate is immersed in a liquid, and a platinum group element 8 is applied to the surface of the wiring conductor to impart catalytic activity. However, in the figure, the platinum group element 8 is exaggerated from the actual scale for explanation.
[0031]
In the active liquid, the platinum group element acts to impart catalytic activity to the surface of the wiring conductor 2 by being applied to the surface of the wiring conductor 2, and the plating metal layer 6 is applied to the surface of the wiring conductor 2 in a later step. This enables selective and uniform deposition.
[0032]
Further, the oxycarboxylic acid has an important function of enabling the platinum group element 8 to be adhered to the surface of the wiring conductor 2 without including lead in the active liquid. That is, the oxycarboxylic acid such as citric acid acts on the surface of the wiring conductor 2 made of a high melting point metal such as tungsten, and oxidizes and complexes the high melting point metal on the surface portion of the wiring conductor 2 to elute into the active liquid. It acts to reduce and precipitate a platinum group element by replacing the trace of elution with tungsten or the like. This is presumed to be because the stability of the complex of an organic acid such as citric acid to a metal is higher for a refractory metal such as tungsten than for an activator such as a platinum group element. By adding oxycarboxylic acid to the active solution in this way, the platinum group element can be easily and uniformly applied to the surface of the wiring conductor 2 without adding lead as a sensitizing agent to the active solution. It can be applied.
[0033]
For example, when palladium is used as the platinum group element, the active liquid mainly includes a palladium compound such as palladium chloride and palladium sulfate and an oxycarboxylic acid (carboxylic acid having a hydroxy group) such as citric acid and malic acid. A solution obtained by adding additives such as a pH adjuster such as hydrochloric acid, borohydrofluoric acid, sodium hydroxide, and potassium hydroxide to an aqueous solution as a component can be used. The concentration of palladium in the active solution is preferably set to about 20 to 80 ppm because a high concentration may cause problems such as segregation of palladium.
[0034]
In addition, the active liquid preferably has an acidic liquidity, and particularly preferably has a pH of 1 to 3, in order to effectively replace tungsten with palladium by the action of oxycarboxylic acid. In order to adjust the pH of the active solution to a predetermined range, a pH adjuster such as hydrochloric acid, borohydrofluoric acid, sodium hydroxide, or potassium hydroxide may be appropriately added to the active solution for adjustment.
[0035]
Next, the wiring conductor 2 is immersed in an electroless plating solution, and the electroless plating metal layer 6 is deposited and applied to the surface of the wiring conductor 2 using the platinum group element as a catalyst.
[0036]
The plating metal layer is made of a nickel-boron alloy, and has an effect of improving solder wettability and bonding property with respect to the wiring conductor 2.
[0037]
The electroless plating solution contains a nickel compound serving as a nickel supply source such as nickel sulfate and a boron-based reducing agent made of dimethylamine borane as the main components because the electroless plating metal layer 6 is made of a nickel-boron alloy. An electroless nickel plating solution to which a complexing agent, a stabilizer, a pH buffer and the like are added can be used. In this case, the nickel (ion) in the electroless nickel plating solution is reduced to metallic nickel as the reducing agent is oxidatively decomposed by the catalytic action of the platinum group element 8 previously deposited on the surface of the wiring conductor. Then, the plating metal layer 6 made of a nickel-boron alloy is formed by eutectoid deposition on the surface of the wiring conductor 2 together with boron generated by the decomposition of the reducing agent. Note that once nickel (boron alloy) starts to be deposited on the surface of the wiring conductor 2, the deposited nickel itself has catalytic activity with respect to the subsequent reduction and precipitation of nickel by a reducing agent. Even if the platinum group element which is a catalyst is not exposed and in contact with the liquid, the reductive precipitation and deposition reaction of nickel can be continuously performed.
[0038]
When a gold plating layer (not shown) is applied to the surface of the plating metal layer 6, the wiring conductor 2 on which the plating metal layer 6 is applied is coated with a gold compound such as potassium potassium cyanide and ethylenediamine tetraethylene. A method of immersing in a substitution type electroless gold plating solution containing a complexing agent such as acetic acid (EDTA) as a main component for a predetermined time can be used.
[0039]
Note that the wiring board of the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the scope of the present invention. For example, in the above-described embodiment, the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element, but may be applied to other uses such as a hybrid integrated circuit board.
[0040]
【The invention's effect】
According to the method for manufacturing a wiring board of the present invention, the platinum group element necessary for applying the electroless plating metal layer is contained inside the electroless plating metal layer applied to the wiring conductor, Since lead is not contained, good catalytic activity is imparted to the wiring conductor by the action of the platinum group element, and the electroless plating metal layer can be uniformly applied only to the wiring conductor, and the lead is plated. It is possible to prevent problems such as spot discoloration of the plated metal layer and harm to the human body caused by being contained in the metal layer.
[Brief description of the drawings]
FIG. 1 is a sectional view showing one embodiment of a wiring board of the present invention.
FIG. 2 is an enlarged view of a main part of the wiring board shown in FIG.
3 (a) to 3 (c) are enlarged cross-sectional views of main parts in each step for explaining a method of manufacturing the wiring board shown in FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Insulator 2 ... Wiring conductor 3 ... Semiconductor element 4 ... Wiring board 5 ... Solder ball 6 ... Plating metal layer 7 ... Lid 8 Platinum group elements

Claims (1)

(1)表面に高融点金属から成る配線導体が形成された絶縁体を準備する工程と、(2)前記配線導体を、白金族元素とオキシカルボン酸とを主成分とする活性液中に浸漬し、配線導体の表面に白金族元素を被着させて触媒活性を付与する工程と、(3)前記配線導体をニッケル化合物およびジメチルアミンボランを主成分とする無電解めっき液中に浸漬し、配線導体の表面にニッケル−ホウ素合金からなる無電解めっき金属層を被着させる工程とからなることを特徴とする配線基板の製造方法。(1) a step of preparing an insulator having a wiring conductor made of a high melting point metal formed on the surface thereof; and (2) immersing the wiring conductor in an active liquid mainly containing a platinum group element and oxycarboxylic acid. Applying a platinum group element to the surface of the wiring conductor to impart catalytic activity, and (3) immersing the wiring conductor in an electroless plating solution containing nickel compound and dimethylamine borane as main components, Depositing an electroless plating metal layer made of a nickel-boron alloy on the surface of the wiring conductor.
JP2000355859A 2000-11-22 2000-11-22 Manufacturing method of wiring board Expired - Fee Related JP3561231B2 (en)

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