JP2002161370A - Wiring board and manufacturing method therefor - Google Patents

Wiring board and manufacturing method therefor

Info

Publication number
JP2002161370A
JP2002161370A JP2000355859A JP2000355859A JP2002161370A JP 2002161370 A JP2002161370 A JP 2002161370A JP 2000355859 A JP2000355859 A JP 2000355859A JP 2000355859 A JP2000355859 A JP 2000355859A JP 2002161370 A JP2002161370 A JP 2002161370A
Authority
JP
Japan
Prior art keywords
wiring conductor
metal layer
wiring
platinum group
wiring board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000355859A
Other languages
Japanese (ja)
Other versions
JP3561231B2 (en
Inventor
Yasuo Fukuda
康雄 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2000355859A priority Critical patent/JP3561231B2/en
Publication of JP2002161370A publication Critical patent/JP2002161370A/en
Application granted granted Critical
Publication of JP3561231B2 publication Critical patent/JP3561231B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15192Resurf arrangement of the internal vias
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/162Disposition
    • H01L2924/16251Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate

Abstract

PROBLEM TO BE SOLVED: To solve a problem that a surface of a metal plated layer tarnishes. SOLUTION: The wiring board comprises having a wiring conductor 2 consisting of a high melting point metal, which is formed on an insulator 1, having an electroless plated metal layer 6 which is applied on the wiring conductor 2, and including platinum group elements and excluding lead inside the above electroless metal plated layer 6.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子や容量
素子、抵抗器等の電子部品を塔載する配線基板であっ
て、その表面の配線導体に無電解法によってめっき層を
被着させて成る配線基板、及びその製造方法に関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board on which electronic components such as semiconductor elements, capacitance elements, resistors and the like are mounted, wherein a plating layer is applied to a wiring conductor on the surface by an electroless method. And a method of manufacturing the same.

【0002】[0002]

【従来の技術】従来、半導体素子や容量素子、抵抗器等
の電子部品が塔載される配線基板は、一般に、酸化アル
ミニウム質焼結体から成り電子部品の搭載部を有する略
四角板形状の絶縁体と、絶縁体の搭載部から外部にかけ
て導出形成されたタングステン、モリブデン、マンガン
等の高融点金属材料から成る複数個の配線層とから構成
されており、絶縁体の搭載部に半導体素子や容量素子、
抵抗器等の電子部品を塔載するとともに電子部品の各電
極を配線層に半田やボンディングワイヤ等の導電性接続
材を介して電気的に接続するようになっている。
2. Description of the Related Art Conventionally, a wiring board on which electronic components such as a semiconductor element, a capacitor element, and a resistor are mounted is generally formed in a substantially square plate shape made of an aluminum oxide sintered body and having a mounting portion for electronic components. It is composed of an insulator and a plurality of wiring layers made of a refractory metal material such as tungsten, molybdenum, and manganese that are led out from the mounting portion of the insulator to the outside. Capacitive element,
An electronic component such as a resistor is mounted, and each electrode of the electronic component is electrically connected to a wiring layer via a conductive connecting material such as solder or a bonding wire.

【0003】このような配線基板は、配線導体の外部に
導出されている部位を外部電気回路基板の回路配線に半
田等を介し接続することによって外部電気回路基板上に
実装され、同時に配線基板に塔載されている電子部品の
各電極が所定の外部電気回路に電気的に接続されること
となる。
[0003] Such a wiring board is mounted on the external electric circuit board by connecting a portion led out of the wiring conductor to the circuit wiring of the external electric circuit board via solder or the like, and at the same time, is mounted on the wiring board. Each electrode of the electronic component mounted on the tower is electrically connected to a predetermined external electric circuit.

【0004】また、このような配線基板は、配線層の表
面にニッケル、銅等のめっき金属層が被着形成され、高
融点金属材料から成る配線層に対する半田やボンディン
グワイヤの濡れ性、ボンディング性等を良好としてい
る。
In such a wiring board, a plating metal layer of nickel, copper, or the like is formed on the surface of the wiring layer, and the wettability and bonding property of the solder and the bonding wire with respect to the wiring layer made of a high melting point metal material. And so on.

【0005】一方、このニッケル、銅等のめっき金属層
を被着形成する方法としては、配線基板の小型化に伴う
配線導体の高密度化によってめっき電力供給用の引き出
し線の形成が困難なことから、引き出し線が不要である
無電解法が多用されつつある。
[0005] On the other hand, the method of depositing and forming a plating metal layer of nickel, copper, or the like is that it is difficult to form a lead wire for supplying plating power due to the high density of wiring conductors accompanying the miniaturization of a wiring board. Therefore, an electroless method that does not require a lead wire is being widely used.

【0006】このような無電解法による配線導体上への
めっき金属層の被着形成は、タングステン、モリブデ
ン、マンガン等の高融点金属がニッケル、銅等の金属の
無電解法(自己触媒型)による還元析出に対して触媒活
性を有しないことから、通常、まず配線導体の表面にパ
ラジウム、白金等の白金族元素を被着させて触媒活性を
付与した後、配線導体を無電解めっき液中に浸漬してめ
っき金属層を被着させるという方法が採用され、一般
に、以下のようにして行われている。即ち、まず、表面
に配線導体を有する絶縁基体を準備し、次に、塩化パラ
ジウム等の白金族元素の供給源となる金属化合物と塩化
鉛等の鉛化合物とを主成分とする水溶液に水酸化ナトリ
ウム、水酸化カリウム等のpH調整剤等の添加剤を添加
して成る活性液中に配線導体を浸漬し、配線導体の表面
にパラジウム等の白金族金属を析出被着させ、次に、硫
酸ニッケル、硫酸銅等のめっき金属の供給源となる金属
化合物と、次亜リン酸ナトリウム、ジメチルアミンボラ
ン、ホルマリン等の還元剤とを主成分とする水溶液に錯
化剤、pH緩衝剤、安定剤等を添加して成る無電解めっ
き液に浸漬し、配線導体表面に被着させたパラジウム等
の白金族金属の触媒活性作用でニッケル、銅等の金属を
還元析出させることにより、配線導体表面のみに選択的
にめっき金属層を被着形成する。
[0006] The formation of a plating metal layer on a wiring conductor by such an electroless method is performed by an electroless method (autocatalytic type) in which a refractory metal such as tungsten, molybdenum, manganese or the like is formed of a metal such as nickel or copper. Since it does not have catalytic activity against reduction precipitation by palladium, usually, first, a platinum group element such as palladium or platinum is applied to the surface of the wiring conductor to impart catalytic activity, and then the wiring conductor is placed in an electroless plating solution. And a method of applying a plating metal layer by immersion in a metal plate, which is generally performed as follows. That is, first, an insulating substrate having a wiring conductor on its surface is prepared, and then, an aqueous solution mainly containing a metal compound serving as a supply source of a platinum group element such as palladium chloride and a lead compound such as lead chloride is prepared. The wiring conductor is immersed in an active solution containing an additive such as a pH adjuster such as sodium or potassium hydroxide, and a platinum group metal such as palladium is deposited and deposited on the surface of the wiring conductor. A complexing agent, a pH buffering agent, and a stabilizer in an aqueous solution mainly containing a metal compound serving as a supply source of a plating metal such as nickel and copper sulfate and a reducing agent such as sodium hypophosphite, dimethylamine borane, and formalin. Immersed in an electroless plating solution containing a metal such as palladium, and by reducing and precipitating metals such as nickel and copper by the catalytic activity of a platinum group metal such as palladium applied to the surface of the wiring conductor. Selective The plated metal layer is deposited and formed.

【0007】なお、上記活性液中に含有される鉛化合物
は、高融点金属から成る配線導体を活性液中に浸漬した
ときに最初に配線導体の表面に吸着し、配線導体表面を
パラジウム等の白金族元素の析出被着に対して感受性化
する作用を有し、配線導体へのパラジウム、白金等の白
金族元素の析出被着を容易、かつ均一なものとしてい
る。また、配線導体の表面に被着されためっき金属層の
内部には、上記配線導体の表面に被着したパラジウム、
白金等の白金族元素と、鉛とが残留し、含有されてい
る。
The lead compound contained in the above-mentioned active solution is first adsorbed on the surface of the wiring conductor when the wiring conductor made of a high melting point metal is immersed in the active solution, and the surface of the wiring conductor is made of palladium or the like. It has the effect of sensitizing the deposition and deposition of platinum group elements, and makes deposition and deposition of platinum group elements such as palladium and platinum on wiring conductors easy and uniform. Further, inside the plating metal layer deposited on the surface of the wiring conductor, palladium deposited on the surface of the wiring conductor,
Platinum group elements such as platinum and lead remain and are contained.

【0008】[0008]

【発明が解決しようとする課題】従来の配線基板は、上
記のようにめっき金属層中に鉛が含有されることから、
ニッケル、銅等のめっき金属層に熱が加わったときに鉛
がめっき金属層の表面に移動拡散して酸化し、しみ状の
変色を生じさせるという機能上の不具合や、めっき金属
層中の鉛により人体に害を及ぼすという環境、安全上の
不具合を生じてしまう、という問題があった。
In the conventional wiring board, lead is contained in the plated metal layer as described above.
When heat is applied to the plating metal layer of nickel, copper, etc., lead moves and diffuses to the surface of the plating metal layer, oxidizes it, and causes a discoloration like a stain. As a result, there is a problem in that it causes harm to the human body and causes a safety problem.

【0009】また、上記問題を解決するために、活性液
中に鉛を非含有とすることが考えられるが、この場合、
高融点金属から成る配線導体の表面はパラジウム、白金
等の白金族元素の析出被着に対する感受性が不十分であ
ることから、配線導体の表面に白金族元素をムラなくか
つ強固に析出被着させることができず、その結果、めっ
き金属層にムラ、カケ、フクレ等の不具合を生じるとい
う問題を誘発してしまう。
In order to solve the above problem, it is conceivable that lead is not contained in the active solution.
Since the surface of the wiring conductor made of a high melting point metal is insufficiently sensitive to deposition and deposition of platinum group elements such as palladium and platinum, the platinum group element is uniformly and strongly deposited and deposited on the surface of the wiring conductor. As a result, a problem such as unevenness, chipping, blistering, or the like occurs in the plated metal layer.

【0010】本発明は、上記問題点を解決するために案
出されたものであり、その目的は、配線導体上に無電解
めっき金属層が均一かつ強固に被着しているとともに、
このめっき金属層中に鉛が含有されず、しみ状変色等の
機能上の不具合を生じたり、人体に害を及ぼしたりする
ことのない配線基板を提供することにある。
[0010] The present invention has been devised to solve the above problems, and an object thereof is to provide an electroless plating metal layer uniformly and firmly adhered on a wiring conductor,
It is an object of the present invention to provide a wiring board which does not contain lead in the plated metal layer and does not cause functional defects such as spot discoloration and does not harm the human body.

【0011】[0011]

【課題を解決するための手段】本発明の配線基板は、絶
縁体に高融点金属から成る配線導体を形成するとともに
該配線導体の表面に無電解めっき金属層を被着させて成
る配線基板であって、前記無電解めっき金属層はその内
部に白金族元素を含有し、かつ鉛が非含有であることを
特徴とするものである。
A wiring board according to the present invention is a wiring board formed by forming a wiring conductor made of a high melting point metal on an insulator and applying an electroless plating metal layer on the surface of the wiring conductor. In addition, the electroless plating metal layer contains a platinum group element therein and is free of lead.

【0012】また本発明の配線基板の製造方法は、
(1)表面に高融点金属から成る配線導体を有する絶縁
体を準備する工程と、(2)前記配線導体を、白金族元
素とオキシカルボン酸とを主成分とする活性液中に浸漬
し、配線導体の表面に白金族元素を被着させて触媒活性
を付与する工程と、(3)前記配線導体を無電解めっき
液中に浸漬し、配線導体の表面に無電解めっき金属層を
被着させる工程とからなることを特徴とするものであ
る。
Further, the method for manufacturing a wiring board according to the present invention comprises:
(1) a step of preparing an insulator having a wiring conductor made of a refractory metal on the surface; and (2) immersing the wiring conductor in an active liquid containing a platinum group element and oxycarboxylic acid as main components; A step of depositing a platinum group element on the surface of the wiring conductor to impart catalytic activity; and (3) immersing the wiring conductor in an electroless plating solution to deposit an electroless plating metal layer on the surface of the wiring conductor. And the step of causing

【0013】本発明の配線基板によれば、配線導体に被
着させた無電解めっき金属層の内部に、無電解めっき金
属層を被着させるのに必要な白金族元素は含有される
が、鉛は非含有であることから、白金族元素の作用によ
り配線導体に良好な触媒活性が付与されて配線導体にの
み無電解めっき金属層を均一に被着させることができ、
かつ、鉛がめっき金属層中に含有されることに起因する
めっき金属層のしみ状変色や人体に対する害という問題
を効果的に防止することができる。
According to the wiring board of the present invention, the platinum group element necessary for depositing the electroless plating metal layer is contained inside the electroless plating metal layer deposited on the wiring conductor. Since lead is not contained, good catalytic activity is imparted to the wiring conductor by the action of the platinum group element, and the electroless plating metal layer can be uniformly applied only to the wiring conductor,
In addition, it is possible to effectively prevent problems such as spot discoloration of the plating metal layer and harm to a human body caused by lead contained in the plating metal layer.

【0014】[0014]

【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1は、本発明の配線基板を半導体素
子を収容する半導体素子収納用パッケージに適用した場
合の一実施例を示す断面図であり、1は絶縁体、2は配
線導体である。この絶縁体1と配線導体2とで半導体素
子3を塔載するための配線基板4が形成される。
Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an embodiment in which the wiring board of the present invention is applied to a package for housing a semiconductor element for housing a semiconductor element, wherein 1 is an insulator, and 2 is a wiring conductor. A wiring board 4 for mounting the semiconductor element 3 on the insulator 1 and the wiring conductor 2 is formed.

【0015】前記絶縁体1は、酸化アルミニウム質焼結
体、窒化アルミニウム質焼結体、ムライト質焼結体等、
炭化珪素質焼結体等の電気絶縁材料から成り、その上面
に半導体素子3を塔載する搭載部を有し、該半導体素子
3が搭載される搭載部から下面にかけて多数のタングス
テン、モリブデン、マンガン等の高融点金属から成る配
線導体2が被着形成されている。
The insulator 1 is made of an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, or the like.
It is made of an electrically insulating material such as a silicon carbide sintered body, and has a mounting portion on which the semiconductor element 3 is mounted on its upper surface, and a large number of tungsten, molybdenum, and manganese from the mounting portion on which the semiconductor element 3 is mounted to the lower surface. The wiring conductor 2 made of a high melting point metal such as that described above is adhered and formed.

【0016】前記絶縁体1は、搭載部に半導体素子3が
搭載されるとともに半導体素子3の各電極は搭載部に露
出している配線導体2に半田ボール5を介して電気的に
接続され、また配線導体2の絶縁体1下面に導出されて
いる部位は外部電気回路基板の回路配線に半田等を介し
て電気的に接続される。
In the insulator 1, the semiconductor element 3 is mounted on the mounting portion, and each electrode of the semiconductor element 3 is electrically connected to the wiring conductor 2 exposed on the mounting portion via the solder ball 5, Further, a portion of the wiring conductor 2 extending to the lower surface of the insulator 1 is electrically connected to circuit wiring of an external electric circuit board via solder or the like.

【0017】前記配線導体2は、図2に断面図で示すよ
うに、その表面に無電解法によりめっき金属層6が被着
されている。
As shown in the sectional view of FIG. 2, a plating metal layer 6 is applied to the surface of the wiring conductor 2 by an electroless method.

【0018】前記めっき金属層6は、配線導体2に対す
る半田の濡れ性、接合強度、ボンディング性を良好なも
のとする作用をなし、ニッケルの含有率が99.9重量
%以上である高純度ニッケル、ニッケル−リン合金、ニ
ッケル−ホウ素合金、銅、銅を主成分とする合金等から
成る。
The plated metal layer 6 serves to improve the wettability, bonding strength, and bonding property of the solder to the wiring conductor 2, and is made of high-purity nickel having a nickel content of 99.9% by weight or more. , A nickel-phosphorus alloy, a nickel-boron alloy, copper, an alloy containing copper as a main component, or the like.

【0019】本発明においては、前記めっき金属層6の
内部に白金族元素を含有し、かつ鉛を含有していないこ
とが重要である。
In the present invention, it is important that the plating metal layer 6 contains a platinum group element and does not contain lead.

【0020】これは、ニッケル−ホウ素めっき層等のめ
っき金属層6に含有される鉛が熱等によりめっき金属層
6の表面に移動拡散してしみ状変色を生じたり、人体に
害を及ぼしたりすることを防止するためである。この場
合、パラジウム、白金等の白金族元素は無電解法でめっ
き金属層6を配線導体2上に被着させるために必要な触
媒付与の作用を有し、配線導体2表面に析出被着される
とともにめっき金属層6中に残留して含有されるが、白
金族元素は鉛に比べて酸化しにくく、また毒性も極めて
小さいことから、めっき金属層6表面に移動拡散してし
み状変色を生じたり、人体に害を及ぼしたりするような
ことはない。
This is because the lead contained in the plating metal layer 6 such as the nickel-boron plating layer moves and diffuses to the surface of the plating metal layer 6 due to heat or the like, causing stain-like discoloration or harm to the human body. This is to prevent that. In this case, a platinum group element such as palladium or platinum has a function of providing a catalyst necessary for depositing the plating metal layer 6 on the wiring conductor 2 by an electroless method, and is deposited and deposited on the surface of the wiring conductor 2. However, since the platinum group element is harder to oxidize than lead and has extremely low toxicity, it migrates and diffuses to the surface of the plating metal layer 6 to cause stain discoloration. It does not occur or harm the human body.

【0021】なお、前記白金族元素は、配線導体2の表
面に沿って膜状に被着している必要はなく、配線導体を
形成する高融点金属の結晶粒の粒界に沿った部位等、ほ
ぼ一定の間隔をおいてムラなく粒状、断片状等に被着し
ていればよく、この白金族元素を基点としてめっき金属
層6を配線導体2の表面に均一に被着させることができ
る。
The platinum group element does not need to be applied in the form of a film along the surface of the wiring conductor 2, but may be located along the grain boundaries of the crystal grains of the refractory metal forming the wiring conductor. The plating metal layer 6 can be uniformly deposited on the surface of the wiring conductor 2 with the platinum group element as a base point, as long as the plating metal layer 6 is applied uniformly and at a substantially constant interval in a granular or fragmented manner. .

【0022】また、白金族元素としては、パラジウムま
たは白金、特にパラジウムが好ましく、高融点金属から
成る配線導体2の表面に良好に被着するとともに、ニッ
ケル、銅等の金属の無電解法による被着形成に対して良
好な触媒活性を付与することができる。
As the platinum group element, palladium or platinum, particularly palladium, is preferable. The platinum group element is favorably adhered to the surface of the wiring conductor 2 made of a high melting point metal, and is coated with a metal such as nickel or copper by an electroless method. Good catalytic activity can be imparted to deposit formation.

【0023】更に、前記配線基板4は、ニッケルの含有
率が99.9重量%以上である純ニッケル、ニッケル−リン
合金、ニッケル−ホウ素合金、銅、銅を主成分とする合
金等から成るめっき金属層6の表面を金めっき層(非図
示)で被覆するようにしておくと、めっき金属層6の酸
化腐食を効果的に防止することができるとともに、配線
導体2に対する半田の濡れ性をより一層良好なものとす
ることができる。従って配線基板4は、めっき金属層6
の表面をさらに金めっき層で被覆するようにしておくこ
とが好ましい。この場合、金めっき層は、その厚さが
0.03μm未満ではめっき金属層を被覆する効果が弱
く、また、0.8μmを超えると半田中の錫と金との間
で脆い金属間化号物が大量に生成し、半田の接合強度が
劣化する傾向がある。従って、金めっき層は、その厚さ
を0.03μm〜0.8μmの範囲としておくことが好
ましい。
Further, the wiring board 4 is made of a plated metal layer made of pure nickel, a nickel-phosphorus alloy, a nickel-boron alloy, copper, an alloy mainly containing copper, etc., having a nickel content of 99.9% by weight or more. 6 is coated with a gold plating layer (not shown), it is possible to effectively prevent oxidative corrosion of the plating metal layer 6 and to further improve the wettability of the solder to the wiring conductor 2. It can be. Therefore, the wiring board 4 is provided with the plated metal layer 6.
It is preferable to further cover the surface with a gold plating layer. In this case, if the thickness of the gold plating layer is less than 0.03 μm, the effect of coating the plating metal layer is weak, and if the thickness exceeds 0.8 μm, the brittle intermetallic layer between tin and gold in the solder. Objects tend to be generated in large quantities, and the bonding strength of the solder tends to deteriorate. Therefore, it is preferable that the thickness of the gold plating layer be in the range of 0.03 μm to 0.8 μm.

【0024】かくして本発明の配線基板によれば、絶縁
体1の搭載部に半導体素子3を搭載するとともに半導体
素子3の各電極を配線層2に半田ボール5を介して電気
的に接続し、しかる後、絶縁体1の上面に金属やセラミ
ックスから成る椀状の蓋体9をガラスや樹脂、ロウ材等
の封止材を介して接合させ、絶縁体1と蓋体7とから成
る容器内部に半導体素子3を気密に収容することによっ
て製品としての半導体装置が完成する。
Thus, according to the wiring board of the present invention, the semiconductor element 3 is mounted on the mounting portion of the insulator 1 and each electrode of the semiconductor element 3 is electrically connected to the wiring layer 2 via the solder ball 5. Thereafter, a bowl-shaped lid 9 made of metal or ceramics is bonded to the upper surface of the insulator 1 via a sealing material such as glass, resin, brazing material, or the like. The semiconductor device as a product is completed by housing the semiconductor element 3 in an airtight manner.

【0025】次に、上述の配線基板の製造方法について
図3(a)乃至(c)に基づいて説明する。なお、図1
および図2と同一箇所には同一符号が付してある。
Next, a method for manufacturing the above-described wiring board will be described with reference to FIGS. FIG.
The same parts as those in FIG. 2 are denoted by the same reference numerals.

【0026】まず、図3(a)に示す表面に高融点金属
から成る配線導体2を設けた絶縁体1を準備する。
First, an insulator 1 having a wiring conductor 2 made of a refractory metal on the surface shown in FIG. 3A is prepared.

【0027】前記絶縁体1は、酸化アルミニウム質焼結
体、窒化アルミニウム質焼結体、ムライト質焼結体炭化
珪素質焼結体等の電気絶縁材料から成る略四角板であ
り、その上面に半導体素子を搭載するための搭載部を有
し、該搭載部に半導体素子が搭載される。
The insulator 1 is a substantially square plate made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body and a silicon carbide sintered body. There is a mounting portion for mounting the semiconductor element, and the semiconductor element is mounted on the mounting portion.

【0028】前記絶縁体1は、例えば、酸化アルミニウ
ム質焼結体から成る場合には、酸化アルミニウム、酸化
珪素、酸化カルシウム、酸化マグネシウム等の原料粉末
に適当な有機バインダ、溶剤を添加混合して泥漿状のセ
ラミックスラリーと成すとともにこのセラミックスラリ
ーを従来周知のドクターブレード法やカレンダーロール
法等のシート成形技術を採用しシート状と成すことによ
ってセラミックグリーンシート(セラミック生シート)
を得て、しかる後、このセラミックグリーンシートを切
断加工や打ち抜き加工により適当な形状とするとともに
これを複数枚積層し、最後にこの積層されたセラミック
グリーンシートを還元雰囲気中、約1600℃の温度で
焼成することによって製作される。
When the insulator 1 is made of, for example, a sintered body of aluminum oxide, a suitable organic binder and a solvent are added to a raw material powder of aluminum oxide, silicon oxide, calcium oxide, magnesium oxide or the like and mixed. A ceramic green sheet (green ceramic sheet) is formed by forming a slurry-like ceramic slurry and forming the ceramic slurry into a sheet by employing a sheet forming technique such as a doctor blade method or a calender roll method which is well known in the art.
After that, the ceramic green sheet is formed into an appropriate shape by cutting or punching, and a plurality of the green sheets are laminated. Finally, the laminated ceramic green sheets are heated at a temperature of about 1600 ° C. in a reducing atmosphere. It is manufactured by firing.

【0029】前記配線導体2は、タングステン、モリブ
デン、マンガン等の高融点金属材料から成り、タングス
テン等の高融点金属粉末に適当な有機バインダや溶剤を
添加混合して得た金属ペーストを絶縁体1と成るセラミ
ックグリーンシートに予め従来周知のスクリーン印刷法
により所定パターンに印刷塗布しておくことによって絶
縁体1の搭載部から下面にかけて被着形成される。
The wiring conductor 2 is made of a high melting point metal material such as tungsten, molybdenum, manganese or the like. A metal paste obtained by adding a suitable organic binder or a solvent to a high melting point metal powder such as tungsten is mixed with the insulator 1. The ceramic green sheet is printed and applied in a predetermined pattern in advance by a well-known screen printing method, so that the insulator 1 is adhered and formed from the mounting portion to the lower surface.

【0030】次に、配線導体2を、パラジウム、白金、
ロジウム、ルテニウム、イリジウムから構成される白金
族元素の少なくとも1種とクエン酸、リンゴ酸等のオキ
シカルボン酸の少なくとも1種とを主成分とする活性液
中に浸漬し、図3(b)に示す如く、配線導体の表面に
白金族元素8を被着させて触媒活性を付与する。ただ
し、図中、白金族元素8は、説明のため実際のスケール
よりも誇張して図示している。
Next, palladium, platinum,
Immersion in an active solution containing at least one platinum group element composed of rhodium, ruthenium and iridium and at least one oxycarboxylic acid such as citric acid and malic acid as shown in FIG. As shown, the catalytic activity is imparted by depositing the platinum group element 8 on the surface of the wiring conductor. However, in the figure, the platinum group element 8 is exaggerated from the actual scale for explanation.

【0031】前記活性液において、白金族元素は配線導
体2の表面に被着することにより配線導体2の表面に触
媒活性を付与する作用をなし、後の工程でめっき金属層
6を配線導体2の表面に選択的に均一に被着させること
を可能としている。
In the above-mentioned active solution, the platinum group element acts to impart catalytic activity to the surface of the wiring conductor 2 by adhering to the surface of the wiring conductor 2, and the plating metal layer 6 is formed on the wiring conductor 2 in a later step. It is possible to selectively and uniformly adhere to the surface of the substrate.

【0032】また前記オキシカルボン酸は、活性液中に
鉛を含有させることなく配線導体2の表面に白金族元素
8を被着させることを可能とする、という重要な作用を
有している。即ち、前記クエン酸等のオキシカルボン酸
は、タングステン等の高融点金属から成る配線導体2の
表面に作用し、配線導体2表面部分の高融点金属を酸
化、錯体化し活性液中に溶出させるとともに、その溶出
跡にタングステン等と置換するようにして白金族元素を
還元析出させる作用をなす。これは、このクエン酸等の
有機酸の金属に対する錯体の安定度が白金族元素等の活
性化剤に対する場合よりもタングステン等の高融点金属
に対する場合の方が大きいためであると推定される。そ
して、このようにオキシカルボン酸を活性液中に添加し
ておくことにより、活性液中に感受性化剤として鉛を添
加することなく、配線導体2の表面に白金族元素を容
易、かつ均一に被着させることが可能となる。
The oxycarboxylic acid has an important function of enabling the platinum group element 8 to be adhered to the surface of the wiring conductor 2 without containing lead in the active liquid. That is, the oxycarboxylic acid such as citric acid acts on the surface of the wiring conductor 2 made of a high melting point metal such as tungsten, and oxidizes and complexes the high melting point metal on the surface portion of the wiring conductor 2 to elute into the active liquid. It acts to reduce and precipitate the platinum group element by replacing the trace of elution with tungsten or the like. This is presumably because the stability of the complex of an organic acid such as citric acid to a metal is higher for a high melting point metal such as tungsten than for an activator such as a platinum group element. By adding the oxycarboxylic acid to the active solution in this way, the platinum group element can be easily and uniformly applied to the surface of the wiring conductor 2 without adding lead as a sensitizing agent to the active solution. It can be applied.

【0033】前記活性液は、例えば白金族元素としてパ
ラジウムを用いる場合であれば、塩化パラジウム、硫酸
パラジウム等のパラジウム化合物と、クエン酸、リンゴ
酸等のオキシカルボン酸(ヒドロキシ基を有するカルボ
ン酸)とを主成分とする水溶液に、塩酸、硼弗化水素
酸、水酸化ナトリウム、水酸化カリウム等のpH調整剤
等の添加剤を添加したものを用いることができる。な
お、活性液中のパラジウム濃度は、高濃度になるとパラ
ジウムの偏析等の不具合を誘発するおそれがあることか
ら、約20〜80ppm程度としておくことが好まし
い。
When the active liquid is, for example, palladium as a platinum group element, a palladium compound such as palladium chloride or palladium sulfate and an oxycarboxylic acid (carboxylic acid having a hydroxy group) such as citric acid or malic acid are used. A solution obtained by adding additives such as a pH adjusting agent such as hydrochloric acid, borohydrofluoric acid, sodium hydroxide, and potassium hydroxide to an aqueous solution mainly containing The concentration of palladium in the active solution is preferably set to about 20 to 80 ppm because high concentrations may cause problems such as segregation of palladium.

【0034】また、前記活性液は、オキシカルボン酸の
作用によるタングステンとパラジウムとの置換を効果的
に行わせるために、その液性が酸性であることが好まし
く、pH1〜3の範囲が特に好ましい。活性液のpHを
所定の範囲とするためには、前記塩酸、硼弗化水素酸、
水酸化ナトリウム、水酸化カリウム等のpH調整剤を活
性液中に適宜添加して調整すればよい。
The active liquid is preferably acidic, and the pH is particularly preferably in the range of 1 to 3, in order to effectively replace tungsten and palladium by the action of oxycarboxylic acid. . In order to adjust the pH of the active solution to a predetermined range, the hydrochloric acid, borohydrofluoric acid,
The pH may be adjusted by appropriately adding a pH adjuster such as sodium hydroxide or potassium hydroxide to the active solution.

【0035】そして次に、前記配線導体2を無電解めっ
き液中に浸漬し、前記白金族元素を触媒として、配線導
体2の表面に無電解めっき金属層6を析出、被着させ
る。
Next, the wiring conductor 2 is immersed in an electroless plating solution, and the electroless plating metal layer 6 is deposited on the surface of the wiring conductor 2 using the platinum group element as a catalyst, and is deposited.

【0036】前記めっき金属層は、ニッケルの含有率が
99.9重量%以上である純ニッケル、ニッケル−リン合
金、ニッケル−ホウ素合金、銅、銅を主成分とする合金
等からなり、配線導体2に対する半田の濡れ性、ボンデ
ィング性等を良好なものとする作用をなす。
The plating metal layer has a nickel content of
99.9% by weight or more of pure nickel, nickel-phosphorus alloy, nickel-boron alloy, copper, alloy containing copper as a main component, etc., to improve the wettability of the solder to the wiring conductor 2, the bonding property, etc. Works.

【0037】前記無電解めっき液は、例えば、無電解め
っき金属層6がニッケル−ホウ素合金からなる場合であ
れば、硫酸ニッケル等のニッケル供給源となるニッケル
化合物と、ジメチルアミンボラン等のホウ素系の還元剤
とを主成分とし、錯化剤、安定剤、pH緩衝剤等を添加
して成る無電解ニッケルめっき液を用いることができ
る。この場合、無電解ニッケルめっき液中のニッケル
(イオン)は、配線導体の表面に予め被着させた白金族
元素8の触媒作用で還元剤が酸化分解されるのにともな
って金属ニッケルに還元され、還元剤の分解に伴って生
じるホウ素とともに配線導体2の表面に共析被着して、
ニッケル−ホウ素合金から成るめっき金属層6を形成す
る。なお、一旦、配線導体2の表面にニッケル(ホウ素
合金)が被着し始めると、この被着したニッケル自身が
後続のニッケルの還元剤による還元、析出に対して触媒
活性を有することから、めっき液中に触媒である白金族
元素が露出、接触していなくても、ニッケルの還元析
出、被着する反応を継続して行わせることができる。
For example, when the electroless plating metal layer 6 is made of a nickel-boron alloy, the electroless plating solution includes a nickel compound serving as a nickel supply source such as nickel sulfate and a boron-based material such as dimethylamine borane. An electroless nickel plating solution containing a reducing agent as a main component and a complexing agent, a stabilizer, a pH buffering agent, and the like added thereto can be used. In this case, nickel (ion) in the electroless nickel plating solution is reduced to metallic nickel as the reducing agent is oxidized and decomposed by the catalytic action of the platinum group element 8 previously deposited on the surface of the wiring conductor. And eutectoid deposition on the surface of the wiring conductor 2 together with boron generated by the decomposition of the reducing agent,
A plating metal layer 6 made of a nickel-boron alloy is formed. Note that once nickel (boron alloy) starts to be deposited on the surface of the wiring conductor 2, the deposited nickel itself has catalytic activity for the subsequent reduction and precipitation of nickel by a reducing agent. Even if the platinum group element as a catalyst is not exposed and in contact with the liquid, the nickel can be continuously reduced and deposited and deposited.

【0038】また前記めっき金属層6の表面に金めっき
層(非図示)を被着させる場合には、めっき金属層6を
被着させた配線導体2を、シアン化金カリウム等の金化
合物と、エチレンジアミン四酢酸(EDTA)等の錯化
剤とを主成分とする置換型の無電解金めっき液中に所定
時間浸漬する方法を用いることができる。
When a gold plating layer (not shown) is applied on the surface of the plating metal layer 6, the wiring conductor 2 on which the plating metal layer 6 is applied is made of a gold compound such as potassium potassium cyanide. Alternatively, a method of dipping in a substitution type electroless gold plating solution containing a complexing agent such as ethylenediaminetetraacetic acid (EDTA) as a main component for a predetermined time can be used.

【0039】なお、本発明の配線基板は上述の実施例に
限定されるものではなく、本発明の要旨を逸脱しない範
囲であれば種々の変更は可能である。例えば、上述の実
施例では本発明の配線基板を半導体素子を収容する半導
体素子収納用パッケージに適用したが、混成集積回路基
板等の他の用途に適用しても良い。
The wiring board of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. For example, in the above embodiment, the wiring board of the present invention is applied to a package for housing a semiconductor element for housing a semiconductor element, but may be applied to other uses such as a hybrid integrated circuit board.

【0040】[0040]

【発明の効果】本発明の配線基板によれば、配線導体に
被着させた無電解めっき金属層の内部に、無電解めっき
金属層を被着させるのに必要な白金族元素は含有される
が、鉛は非含有であることから、白金族元素の作用によ
り配線導体に良好な触媒活性が付与されて配線導体にの
み無電解めっき金属層を均一に被着させることができ、
かつ、鉛がめっき金属層中に含有されることに起因する
めっき金属層のしみ状変色や人体に対する害という問題
の発生を防止することができる。
According to the wiring board of the present invention, the platinum group element necessary for depositing the electroless plating metal layer is contained inside the electroless plating metal layer deposited on the wiring conductor. However, since lead is not contained, good catalytic activity is imparted to the wiring conductor by the action of the platinum group element, and the electroless plating metal layer can be uniformly applied only to the wiring conductor,
In addition, it is possible to prevent problems such as spot-like discoloration of the plating metal layer and harm to the human body caused by lead contained in the plating metal layer.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の配線基板の一実施例を示す断面図であ
る。
FIG. 1 is a sectional view showing one embodiment of a wiring board of the present invention.

【図2】図1に示す配線基板の要部拡大図である。FIG. 2 is an enlarged view of a main part of the wiring board shown in FIG.

【図3】(a)乃至(c)は図1に示す配線基板の製造
方法を説明するための各工程毎の要部拡大断面図であ
る。
3 (a) to 3 (c) are enlarged cross-sectional views of essential parts in each step for explaining a method of manufacturing the wiring board shown in FIG.

【符号の説明】[Explanation of symbols]

1・・・・絶縁体 2・・・・配線導体 3・・・・半導体素子 4・・・・配線基板 5・・・・半田ボール 6・・・・めっき金属層 7・・・・蓋体 8・・・・白金族元素 DESCRIPTION OF SYMBOLS 1 ... Insulator 2 ... Wiring conductor 3 ... Semiconductor element 4 ... Wiring board 5 ... Solder ball 6 ... Plating metal layer 7 ... Lid 8 Platinum group elements

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05K 3/24 H01L 23/14 M Fターム(参考) 4E351 AA07 BB01 BB23 BB24 BB33 BB35 CC07 DD17 DD19 DD20 DD58 GG11 GG20 4K022 AA02 AA42 BA04 BA08 BA14 BA16 BA18 BA31 BA32 BA35 CA06 CA21 CA23 DA01 DB01 5E343 AA02 AA23 BB16 BB38 BB39 BB40 BB44 BB49 BB71 CC72 DD33 GG20 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI theme coat ゛ (Reference) H05K 3/24 H01L 23/14 MF term (Reference) 4E351 AA07 BB01 BB23 BB24 BB33 BB35 CC07 DD17 DD19 DD20 DD58 GG11 GG20 4K022 AA02 AA42 BA04 BA08 BA14 BA16 BA18 BA31 BA32 BA35 CA06 CA21 CA23 DA01 DB01 5E343 AA02 AA23 BB16 BB38 BB39 BB40 BB44 BB49 BB71 CC72 DD33 GG20

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】絶縁体に高融点金属から成る配線導体を形
成するとともに該配線導体の表面に無電解めっき金属層
を被着させて成る配線基板であって、前記無電解めっき
金属層はその内部に白金族元素を含有し、かつ鉛が非含
有であることを特徴とする配線基板。
1. A wiring board comprising a wiring conductor made of a high melting point metal formed on an insulator and an electroless plating metal layer applied to a surface of the wiring conductor, wherein the electroless plating metal layer is A wiring board, which contains a platinum group element and contains no lead.
【請求項2】(1)表面に高融点金属から成る配線導体
が形成された絶縁体を準備する工程と、(2)前記配線
導体を、白金族元素とオキシカルボン酸とを主成分とす
る活性液中に浸漬し、配線導体の表面に白金族元素を被
着させて触媒活性を付与する工程と、(3)前記配線導
体を無電解めっき液中に浸漬し、配線導体の表面に無電
解めっき金属層を被着させる工程とからなる配線基板の
製造方法。
(2) a step of preparing an insulator having a wiring conductor made of a refractory metal formed on a surface thereof; and (2) a step of preparing the wiring conductor mainly containing a platinum group element and oxycarboxylic acid. A step of immersing the wiring conductor in a catalytic solution by applying a platinum group element to the surface of the wiring conductor to impart catalytic activity thereto; and (3) immersing the wiring conductor in an electroless plating solution to form a coating on the surface of the wiring conductor. A method of manufacturing a wiring board, comprising the step of applying an electrolytic plating metal layer.
JP2000355859A 2000-11-22 2000-11-22 Manufacturing method of wiring board Expired - Fee Related JP3561231B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000355859A JP3561231B2 (en) 2000-11-22 2000-11-22 Manufacturing method of wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000355859A JP3561231B2 (en) 2000-11-22 2000-11-22 Manufacturing method of wiring board

Publications (2)

Publication Number Publication Date
JP2002161370A true JP2002161370A (en) 2002-06-04
JP3561231B2 JP3561231B2 (en) 2004-09-02

Family

ID=18828203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000355859A Expired - Fee Related JP3561231B2 (en) 2000-11-22 2000-11-22 Manufacturing method of wiring board

Country Status (1)

Country Link
JP (1) JP3561231B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031602A (en) * 2002-06-25 2004-01-29 Kyocera Corp Wiring board and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031602A (en) * 2002-06-25 2004-01-29 Kyocera Corp Wiring board and method for manufacturing the same

Also Published As

Publication number Publication date
JP3561231B2 (en) 2004-09-02

Similar Documents

Publication Publication Date Title
EP0092971B1 (en) Process for selectively depositing a nickel-boron coating over a metallurgy pattern on a dielectric substrate and products produced thereby
JP3561240B2 (en) Manufacturing method of wiring board
JP2002076189A (en) Wiring board
JP2002161370A (en) Wiring board and manufacturing method therefor
JP4154520B2 (en) Wiring board manufacturing method
JP2003253454A (en) Method for plating electronic parts, and electronic parts
JP2003105549A (en) Circuit wiring board and method of manufacturing the same
JP2004332036A (en) Electroless plating method
JP4683768B2 (en) Wiring board
JP3914832B2 (en) Wiring board manufacturing method
JP2001148561A (en) Method of manufacturing wiring board
JPS6314877B2 (en)
JP3898482B2 (en) Wiring board
JP3740407B2 (en) Wiring board
JP2003283110A (en) Wiring board and its manufacturing method
JP2003073841A (en) Wiring board and manufacturing method therefor
JP3265968B2 (en) Electrode of glass ceramic substrate and method for forming the same
JP2005276892A (en) Wiring board
JP2003218501A (en) Wiring board and its manufacturing method
JP2001177222A (en) Manufacturing method of wiring board
JP3771854B2 (en) Wiring board
JP2003100952A (en) Wiring board
JP2001177220A (en) Manufacturing method of wiring board
JP2004039995A (en) Wiring board
JP2003243809A (en) Wiring board and its manufacturing method

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040218

A131 Notification of reasons for refusal

Effective date: 20040302

Free format text: JAPANESE INTERMEDIATE CODE: A131

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040421

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20040525

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20040527

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090604

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090604

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100604

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110604

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120604

Year of fee payment: 8

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130604

Year of fee payment: 9

LAPS Cancellation because of no payment of annual fees