JP3558127B2 - Wafer drying apparatus and drying method - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a drying apparatus and a drying method for cleaning and drying a wafer in a semiconductor integrated circuit manufacturing process, and more particularly to a drying apparatus and a drying method of drying a wafer by heating.
[0002]
[Prior art]
In the manufacture of wafers, as a pre-processing and post-processing of each step, the wafers are washed with various chemicals, the wafers are washed with pure or aqueous solution to completely remove organic substances from the wafer surface, and then the wafers are completely washed. To dry. Conventionally, for drying the wafer after such water washing, a spin-drying method in which a carrier on which a wafer wet with water is mounted is rotated at high speed to remove water by centrifugal force, or isopropyl alcohol (IPA) There is an IPA method in which moisture is evaporated and dried in a steam atmosphere.
[0003]
However, in the spin dry method, static electricity is easily generated due to mechanical rotation, and there is a problem such as destruction of elements formed on a wafer. Further, in recent years, the diameter of a wafer has been increasing, and in the spin-dry method, a large-scale apparatus is required to dry the large wafer. Therefore, it is disadvantageous to use a large-sized wafer which will become a mainstream in the future.
[0004]
In the IPA method, isopropyl alcohol, which is a chemical used, is toxic and has a risk of ignition. Further, there is also a problem of treating a waste liquid of an organic solvent.
[0005]
In order to solve such a disadvantage of the conventional drying method, Japanese Patent Application Laid-Open No. 6-104239 discloses an apparatus for drying a substrate (wafer). This drying device dries the substrate (wafer) by irradiating the substrate (wafer) with infrared rays in an inert gas atmosphere.
[0006]
[Problems to be solved by the invention]
However, in the wafer drying process, dozens of wafers are often arranged side by side so that the surfaces thereof face each other. In the drying apparatus disclosed in the above publication, the periphery of the thus arranged wafer row is often used. Irradiation of the entire wafer row with infrared rays results in a large energy loss. Further, a portion of the wafer near the irradiation position of the infrared ray is easily dried, but a portion far from the irradiation position such as the center portion of the wafer is not easily dried, and the temperature distribution in the entire region of the wafer varies. . In addition, if the output of infrared rays is increased for uniform drying, the temperature of a portion close to the irradiation position may rise excessively, and may damage an element provided in a portion close to the irradiation position. If the irradiation amount is adjusted weakly so as not to raise the temperature excessively, there is a problem that drying takes a long time. As described above, in the above-described drying apparatus, it is difficult to perform delicate temperature control such as drying the entire surface of the wafer uniformly.
[0007]
In the drying apparatus of the heating system, when drying is performed under reduced pressure by vacuum, drying can be accelerated. However, there is a problem in that the degree of drying is uneven, and stains such as watermarks are easily formed.
[0008]
Therefore, a technical problem to be solved by the present invention is to provide a wafer drying apparatus capable of uniformly and efficiently drying a wafer.
[0009]
[Means for Solving the Problems and Functions / Effects]
The present invention provides a drying device having the following configuration in order to solve the above technical problems.
[0010]
This drying apparatus has a gantry capable of supporting a plurality of wafers in a state where the wafers are erected at regular intervals so that their surfaces face each other,
It has a plurality of rod-shaped heaters having a length equal to or longer than the diameter of the wafer so as to be located between each of the wafers supported on the gantry, and intersects the rod-shaped heater in its extending direction, and A heater unit configured to be movable in a direction parallel to the surface of the wafer ,
Said heater unit, said rod-shaped heater of the heating conditions cause drying surface of the wafer is moved relative to the wafer so as to scan the entire surface of the wafer.
[0011]
In the above configuration, the rod-shaped heater relatively moves in parallel with the surface of the wafer along with the heater unit. Here, the heater unit only needs to move relatively to the wafer supported by the gantry, and the heater unit may move or the gantry may move. Since the heated bar-shaped heater moves along the surface of the wafer so as to scan the entire surface of the wafer, the surface of the wafer can be heated over a wide area, and the temperature of the surface of the wafer can be uniformly increased. it can. In addition, since the rod-shaped heater can be heated close to the surface of the wafer, the heating can be performed efficiently, and the time for raising the temperature of the wafer can be shortened. Further, since the bar-shaped heater is provided along the gantry and is arranged so as to fit in the wafer row when the wafer is mounted, it is not necessary to arrange the bar-shaped heater around the wafer row, and the space of the drying device itself is eliminated. Can be reduced.
[0012]
Further, since the bar-shaped heaters are provided so as to correspond to each of the placed wafers, the operation can be performed by irradiating only the bar-shaped heaters located on both sides of the wafer. Therefore, even when the number of dried wafers is small and the wafers are not placed at all locations, overheating of the wafers can be prevented, and there is little influence of the change in the number of wafers.
[0013]
Therefore, according to the above configuration, the entire surface of the element surface of the wafer can be heated and dried uniformly and efficiently.
[0014]
The drying device of the present invention can be specifically configured in various modes as described below.
[0015]
Preferably, the rod heater is an infrared radiation heater.
[0016]
According to the above configuration, by using the infrared radiation heat heater as the rod-shaped heater, the time for raising the temperature of the rod-shaped heater can be shortened, and the temperature in the furnace is not greatly increased. That is, the rod-shaped heater directly and efficiently heats only the adjacent wafer. Therefore, in drying the wafer, it is possible to reduce the influence of the rod-shaped heater not adjacent to the wafer.For example, when drying a small number of wafers, only the rod-shaped heater adjacent to the wafer mounted on the gantry is used. Even if the irradiation is performed, the drying operation can be efficiently performed by the same operation as when drying the maximum number of wafers that can be mounted on the apparatus at one time. That is, drying can be performed without affecting the number of wafers to be dried in one operation.
[0017]
In the above configuration, preferably, the heater unit moves at a speed of 2 to 6 mm / s.
[0018]
In the above configuration, the rod-shaped heater relatively moves up and down along the surface of the wafer as the heater unit moves, so that the moving speed of the heater unit is a factor that determines the time required for the drying operation of the apparatus. When the heater unit is moved slowly, the wafer can be surely dried, but the time required for the drying operation is long. On the other hand, if the heater unit is moved quickly, the time required for the operation can be shortened, but it is difficult to dry the wafer reliably. Although this value is affected by the output of the rod-shaped heater used, the wafer can be completely dried by moving the heater unit at a speed of 2 to 6 mm / s using a commercially available infrared radiation heater.
[0019]
According to the above configuration, it is possible to completely dry the entire surface of the wafer without carelessly lengthening the drying operation.
Also preferably, in order to place the wafer on the gantry, a chuck for moving the wafer is provided,
The heater unit dries a portion below a predetermined portion of the wafer in a stopped state when the wafer is moving so that the chuck is mounted on the gantry, and places the wafer on the gantry. Then, it moves to dry a portion above the predetermined portion.
[0020]
The present invention also provides the following method for drying a wafer.
[0021]
The method of drying a wafer is to dry the wafer after cleaning with water or an aqueous solution. Then, a rod-shaped heater arranged between a plurality of wafers arranged at regular intervals so that the surfaces thereof face each other, the rod-shaped heater in a heated state with respect to the wafer, The surface of the wafer is dried by being relatively moved so as to scan the entire surface.
[0022]
In the above method, the bar-shaped heater for heating the wafer can be disposed close to the wafer, and can be relatively moved parallel to the surface of the wafer so as to scan the entire surface of the wafer. Therefore, the surface of the wafer can be heated over a wide range, and the temperature distribution on the surface of the wafer can be made uniform. Further, since the rod-shaped heater can be heated close to the surface of the wafer, the heating can be performed efficiently, and the temperature raising time can be shortened.
[0023]
Further, since the bar-shaped heaters are provided adjacent to each of the wafers, it is possible to operate by irradiating only the bar-shaped heaters located on both sides of the wafer. Therefore, even when the wafer is arranged only in a part of the arrangement position, the temperature of the wafer can be prevented from being excessively increased, and the influence of the change in the number of wafers is less.
[0024]
According to the above method, the entire surface of the wafer can be uniformly heated and dried uniformly and efficiently.
[0025]
The method for drying the wafer can be suitably performed by the method described below.
[0026]
Preferably, the method of drying the wafer, the step of moving the chuck holding a plurality of wafers at a certain interval downward from the top of the gantry toward the gantry, the lower end of the wafer is located near the gantry upper side When descending to the vicinity of the located bar-shaped heater, turning on the bar-shaped heater, and after the wafer is placed on the gantry, release the grip on the wafer with the chuck and retract upward. Moving the rod-shaped heater upward while heating the rod-shaped heater.
[0027]
In the above method, utilizing the relative movement of the bar-shaped heater with respect to the wafer when the wafer is placed on the gantry, the lower portion of the wafer to which the bar-shaped heater cannot be moved by the gantry when placed on the gantry is heated. That is, while the wafer gripped by the chuck is descending, the rod-shaped heater is heated at the timing when the lower end of the wafer descends to the vicinity of the rod-shaped heater, and the lower part of the continuously descending wafer is heated. .
[0028]
According to the above method, the lower portion of the wafer, on which the bar heater cannot be moved by the gantry, can be uniformly heated by the bar heater, and the entire surface of the wafer can be uniformly dried.
[0029]
Preferably, the method for drying a wafer includes the steps of: moving a chuck holding a plurality of wafers at a predetermined interval downward from the upper side of the gantry toward the gantry; and lowering the lower end of the wafer from above the gantry. When descending to the vicinity of a rod heater located apart, turning on the rod heater, and when the chuck is lowered until the chuck lower end is adjacent to the upper side of the rod heater, the rod heater is turned off, and Retreating, and after the wafer is placed on the gantry, releasing the chuck of the chuck with respect to the wafer and retreating upward, and moving the rod-shaped heater upward while heating the rod-shaped heater. Is provided.
[0030]
If the rod-shaped heater is located near the pedestal and receives the heat of the rod-shaped heater for a long time, the pedestal made of a polymer material may bend, and it may be difficult to hold the semiconductor vertically. is there. According to the above method, since the rod-shaped heater heats not in the vicinity of the gantry but in a location distant upward, the heating time in the vicinity of the gantry is short and the gantry is rarely heated.
[0031]
Therefore, according to the above configuration, the temperature rise of the gantry is small, and the load on the gantry can be reduced.
[0032]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a wafer drying apparatus according to an embodiment of the present invention will be described with reference to the drawings.
[0033]
FIG. 1 is a schematic front view showing the internal structure of the drying device according to the first embodiment of the present invention. FIG. 2 is a schematic perspective view showing the internal structure of the drying device of FIG. The drying device 1 is incorporated in a semiconductor cleaning device and constitutes a part thereof. As shown in FIG. 1, in the drying apparatus, a quartz tank 10 for preventing corrosion by a chemical solution or the like is provided in a furnace body 12 made of stainless steel. The inside of the furnace body 12 is protected by a heat insulating material to prevent heat from escaping to the outside. The quartz tank 10 is provided with an exhaust port 14 for sucking and exhausting gas in the furnace. A gantry 6 on which the wafer 2 is mounted and a heater unit 3 are provided in the double layers of the furnace body 12 and the quartz tank 10.
[0034]
The pedestal 6 on which the wafer 2 is arranged is formed of three rods, and is fixed in the quartz tank 10. The gantry 6 is preferably made of quartz in consideration of heat resistance. However, since the wafer 2 may be damaged when the wafer 2 is mounted on the gantry 6, in this embodiment, a heat resistant material such as polyetheretherketone is used. Uses conductive polymer. The gantry 6 supports the lower portion of the wafer 2 at three points as shown in FIG. Each pedestal 6 is provided with a groove at the same position in the longitudinal direction for firmly supporting the wafer vertically. By mounting the wafer 2 on the gantry 6 so as to fit into the grooves provided in the three rods, the wafer 2 can be arranged in an upright state. As shown in FIG. 2, in the present embodiment, ten wafers 2 a to 2 j can be arranged on the gantry 6 with an interval of 10 mm between adjacent wafers. The structure of the gantry for supporting the wafer is not particularly limited, and it is preferable that the gantry be composed of a plurality of, in particular, three to four rods.
[0035]
As shown in FIG. 2, the heater unit 3 includes bar heaters 4a to 4e disposed between the vertically erected wafers 2a to 2j and parallel to the surfaces of the wafers 2a to 2j, respectively. And a heater support rod 8 which is horizontally supported. In this embodiment, nine bar heaters 4 are provided between the wafers 2a to 2j (4b to 4e), and the bar heaters 4 are provided on the front side (4a) of the frontmost wafer 2a so as to face all the surfaces of the wafers 2. A total of eleven wafers are arranged, one wafer and one innermost wafer of the innermost wafer 2j, but some rod-shaped heaters are omitted in FIG. The heater support rod 8 is preferably made of quartz from the viewpoint of stability against heat and the like.
[0036]
The rod-shaped heater 4 is preferably a radiant heat heater that heats the wafer 2 and hardly raises the temperature of the surrounding air. In particular, a near-infrared rod-shaped heater (halogen heater) is suitably used because the temperature of the heater rises quickly. By using such a radiant heat heater, it is possible to reduce the rise in the temperature inside the furnace and to heat only the opposed wafer 2. In this embodiment, a near-infrared halogen heater (maximum output 1 kW) having a diameter of 6 mm is used.
[0037]
The heater unit 3 moves up and down as shown by the arrow 50. As the heater unit 3 moves, each bar-shaped heater 4 moves up and down between the wafers 2 along the surface.
[0038]
When the rod-shaped heater 4 is turned on, the surface of the wafer facing the rod-shaped heater is heated. When the heater unit 3 is moved relative to the wafer 2 in this state, the bar-shaped heater scans the surface of the wafer 2, and the surface of the wafer is uniformly heated. Therefore, the wafer 2 can be dried uniformly. At this time, the relative speed of the heater unit is usually 1 mm / s or more. If it is less than 1 mm / s, it takes too much time for the drying step, and it cannot be balanced with other steps. There is no particular limitation as long as it is 1 mm / s or more, but it is difficult to raise the temperature of the wafer to a desired temperature unless it is about 8 mm / s or less with currently marketed heaters. Preferably, it is 2 mm / s to 6 mm / s. When a high-output heater is used, the time required for temperature rise is reduced, and the relative speed can be increased.
[0039]
By moving the heater unit up and down along the surface of the wafer, the temperature can be raised to 100 ° C. or more and less than 120 ° C. over the entire area on both surfaces of the wafer. However, it is preferable not to exceed 150 ° C. so as not to damage the elements on the wafer. The temperature can be controlled by the output and the moving speed of the rod-shaped heater 4 as described above.
[0040]
In the drying apparatus shown in FIGS. 1 and 2, the heater unit can be moved for the upper part 21 of the wafer 2 held by the gantry 6, but the gantry 6 exists for the lower part 22. Therefore, the heater unit 3 cannot be moved along the wafer surface. Therefore, in order to uniformly raise the temperature of all surfaces including the lower portion 22 of the wafer, it is preferable to dry the wafer according to the following operation procedure.
[0041]
FIG. 3 shows a first operation procedure of the drying device according to the first embodiment. As shown in FIG. 3A, the wafer 2 is placed on the gantry 6 by the chucks 30a and 30b holding the plurality of wafers 2 at regular intervals. At this time, the chucks 30a and 30b dispose the wafer 2 from above the quartz tank 10 and move downward as indicated by an arrow 51. The moving speed at this time may be high, and in this embodiment, the moving speed is lowered at 20 mm / s. At this time, the rod-shaped heater 4 is located near the gantry 6 and is in an OFF state.
[0042]
As shown in (b), as the chucks 30a and 30b descend and the wafer 2 approaches the rod-shaped heater 4, the descending speed of the chuck is reduced. Then, as shown by an arrow 52, when the lower end of the wafer 2 is moved to the vicinity of the rod-shaped heater in consideration of the temperature rise of the rod-shaped heater 4, the rod-shaped heater 4 is turned on (actual output 50W per heater). ). That is, after a necessary time elapses until the bar heater reaches a steady state, the switch timing of the bar heater is adjusted so that the lower end of the wafer faces the bar heater. At this time, in order to prevent an ascending air current generated by the heat of the rod-shaped heater, suction is performed weakly from the exhaust port 14.
[0043]
As shown in (c), when the chucks 30a and 30b are lowered as indicated by the arrow 53 in a state where the bar-shaped heater 4 is ON, the bar-shaped heater 4 relatively moves below the wafer 2. In this embodiment, the moving speed of the chucks 30a and 30b at this time is 3 mm / s, which is the same as the speed at which the rod-shaped heater 4 moves along the surface of the wafer 2 as described later. At this time, the lower portion of the wafer 2 that has passed through the rod-shaped heater 4 is heated and dried.
[0044]
As shown in (d), when the chuck 4 moves down and the wafer 2 is placed on the gantry 6, the grip of the chucks 30a and 30b on the wafer is released, and the chucks 30a and 30b are retracted upward. At this time, the rod-shaped heater 4 is turned off once so as not to overheat the wafer 2.
[0045]
As shown in (e), when the chucks 30a and 30b are retracted, the rod-shaped heater 4 is turned on and heats the wafer 2. Then, as shown in (f), the heater unit 3 moves upward, and accordingly, the bar-shaped heater 4 moves upward as shown by an arrow 54. In the present embodiment, the moving speed of the heater unit 3 at this time is 3 mm / s.
[0046]
As shown in (g), when the heater unit 3 moves to the uppermost end of the wafer 2, the rod-shaped heater is turned off, and the heating is terminated. Thereafter, the rod-shaped heater 4 is lowered as indicated by an arrow 55 while being in the OFF state, and is disposed at the original position. In the present embodiment, the moving speed at this time is 20 mm / s. When the heater unit 3 starts to lower, the exhaust from the exhaust port 14 is increased, and the temperature of the wafer 2 is reduced. Evacuation is performed for about 40 to 60 seconds, and when the temperature of the wafer 2 is lowered, the chucks 30a and 30b are lowered and the wafer 2 is carried out.
[0047]
Through a series of these operations, a plurality of (10 in this embodiment) wafers can be uniformly and quickly dried. In the above operation procedure, when a wafer having a diameter of 300 mm is used, the drying step can be completed in about 3 to 4 minutes.
[0048]
FIG. 4 shows a second operation procedure of the drying apparatus according to the first embodiment. As shown in FIG. 4A, the wafer 2 is placed on the gantry 6 by chucks 30a and 30b that hold a plurality of wafers 2 at regular intervals. At this time, the chucks 30a and 30b move downward from the upper side of the quartz tank 10 as shown by an arrow 56. The moving speed at this time may be high, and in this embodiment, the moving speed is lowered at 20 mm / s. At this time, the heater unit 3 is located at the uppermost position and is in an OFF state.
[0049]
As shown in (b), as the chucks 30a and 30b descend and the wafer 2 approaches the rod-shaped heater 4, the descending speed of the chuck is reduced. Then, as shown by an arrow 57, when the lower end of the wafer 2 moves to the vicinity of the rod-shaped heater, the rod-shaped heater 4 is turned on (actual output 50 w per heater). At this time, in order to prevent an ascending air current generated by the heat of the rod-shaped heater, suction is performed weakly from the exhaust port 14. The timing of turning on the rod-shaped heater is preferably performed when the lower end of the wafer 2 is positioned about several centimeters above the rod-shaped heater 4 in consideration of the time until the rod-shaped heater is completely heated. When the chucks 30a and 30b descend as shown by the arrow 57 in a state where the rod-shaped heater 4 is ON, the rod-shaped heater 4 relatively moves below the wafer 2. In the present embodiment, the relative movement speed of the chucks 30a and 30b with respect to the bar heater at this time is 3 mm / s, which is the same as the speed at which the bar heater 4 moves along the surface of the wafer 2 as described later. At this time, the chucks 30a and 30b are lowered at a higher speed than the heater unit 3 so that the relative speed with respect to the bar-shaped heater 4 becomes 3 mm / s while lowering the heater unit 3 in preparation for a step described later. Is also good. The lower part of the wafer 2 that has passed through the rod-shaped heater 4 is heated and dried.
[0050]
As shown in (c), when the chuck 4 moves down as indicated by an arrow 58 and the chuck is adjacent to the rod-shaped heater, the rod-shaped heater 4 is turned off once so as not to overheat the wafer 2. . Then, as shown in (d), in order to place the wafer 2 on the gantry 6, the heater unit 3 is lowered as shown by an arrow 59, and the chucks 30a and 30b are lowered as shown by an arrow 60.
[0051]
As shown in (e), when the chuck 4 moves down and the wafer 2 is placed on the gantry 6, the chucks 30a and 30b come off and retract upward. Then, when the chucks 30a and 30b are retracted as shown in (f), the bar-shaped heater 4 is turned on, and the wafer 2 is heated. Then, as shown in (g), the heater unit 3 moves upward. In the present embodiment, the moving speed of the heater unit 3 at this time is 3 mm / s.
[0052]
As shown in (g), when the heater unit 3 moves to the uppermost end of the wafer 2, the rod-shaped heater is turned off, and the heating is terminated. Thereafter, the heater unit 3 is lowered while the rod-shaped heater 4 is in the OFF state, and stored in the original position. In the present embodiment, the moving speed at this time is 20 mm / s. When the heater unit 3 starts to lower, the exhaust from the exhaust port 14 is increased, and the temperature of the wafer 2 is reduced. The air is evacuated for about 40 to 60 seconds, and when the temperature of the wafer 2 falls, the chucks 30a and 30b descend and carry the wafer 2 out.
[0053]
According to the second operation procedure, it is necessary to first raise the heater unit 3 and then lower it, and the time required for the drying operation is longer than that of the first operation procedure. Since the heating time is short, when a polymer material is used for the gantry 6, there is little risk of deformation, and the burden on the gantry can be reduced.
[0054]
As described above, according to the drying apparatus of the present invention, since the heater unit relatively moves along the surface facing the surface of the wafer, the entire surface of the wafer can be uniformly heated, and the drying can be performed. Can be made more effective.
[0055]
The present invention is not limited to the above embodiment, but can be implemented in various other modes. For example, instead of moving the heater unit up and down, the bar heater and the wafer can be relatively moved by moving the gantry up and down.
[Brief description of the drawings]
FIG. 1 is a schematic front view showing an internal structure of a drying device according to a first embodiment of the present invention.
FIG. 2 is a schematic perspective view showing the internal structure of the drying device of FIG.
FIG. 3 is an explanatory diagram showing a first operation procedure of the drying device of FIGS. 1 and 2;
FIG. 4 is an explanatory diagram showing a second operation procedure of the drying device in FIGS. 1 and 2;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Drying apparatus 2, 2a-2j Wafer 3 Heater unit 4, 4a-4e Bar-shaped heater 6 Mount 8 Heater support rod 10 Quartz tank 12 Furnace body 14 Exhaust port 21 Wafer lower part 22 Wafer upper part

Claims (7)

A gantry (6) capable of supporting a plurality of wafers (2) in a state where the wafers (2) are erected at regular intervals so that their surfaces face each other;
The has a pedestal plurality of rod-like heater having a respective position for the diameter over the length of the wafer as between the wafer supported on a (6) (2) (4), the rod-shaped heater ( 4) a heater unit (3) configured to be movable in a direction crossing the extending direction thereof and parallel to the surface of the wafer (2) ;
The heater unit (3) is moved relative to the wafer (2) so that the heated bar-shaped heater (4) scans the entire surface of the wafer (2). characterized in that makes drying the surface of the drying apparatus of the wafer. The apparatus for drying a wafer according to claim 1, wherein the rod-shaped heater (4) is an infrared radiation heater. The apparatus for drying a wafer according to claim 2, wherein the heater unit (3) moves at a speed of 2 to 6 mm / s. A chuck (30a, 30b) for moving the wafer (2) for mounting the wafer (2) on the gantry (6);
The heater unit (3) stops below the predetermined portion of the wafer (2) in a stopped state while the wafer is moving so that the chucks (30a, 30b) are mounted on the gantry (6). Drying said portion (21), moving said wafer (2) after being placed on said gantry (6), and drying said portion (22) above said predetermined portion. Item 4. The apparatus for drying a wafer according to any one of Items 1 to 3. A wafer drying method for drying a wafer (2) after being washed with water or an aqueous solution, wherein the wafer (2) is dried between a plurality of wafers (2) arranged at regular intervals so that their surfaces face each other. The bar heaters (4) arranged respectively are moved relative to the wafer (2) such that the bar heater (4) in a heated state scans the entire surface of the wafer (2). A method for drying a wafer, comprising drying the surface of the wafer (2). Moving the chucks (30a, 30b) holding the plurality of wafers (2) at regular intervals downward from above the gantry (6) toward the gantry (6);
When the lower end of the wafer (2) is lowered to the vicinity of the rod-shaped heater (4) located above and near the pedestal (6), starting heating of the rod-shaped heater (4);
After the wafer (2) is placed on the gantry (6), the chucks (30a, 30b) are released from gripping the wafer (2) and retracted upward, and the rod-shaped heater (4) The method of drying a wafer according to claim 5 , further comprising: moving the wafer upward while heating the wafer. Moving the chucks (30a, 30b) holding the plurality of wafers (2) at regular intervals downward from above the gantry (6) toward the gantry (6);
When the lower end of the wafer (2) is lowered to the vicinity of the rod-shaped heater (4) located above the gantry (6), heating the rod-shaped heater (4);
Stopping the heating of the bar-shaped heater (4) when the chucks (30a, 30b) are lowered until the lower ends of the chucks (30a, 30b) are adjacent to the upper side of the bar-shaped heater (4); When,
After the wafer (2) is placed on the gantry (6), the chucks (30a, 30b) are released from gripping the wafer (2) and retracted upward, and the rod heater (4) The method of drying a wafer according to claim 5 , further comprising: moving the wafer upward while heating the wafer.

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