JP3538820B2 - (Fluoroalkenyl) cyclohexane derivative and liquid crystal composition - Google Patents
(Fluoroalkenyl) cyclohexane derivative and liquid crystal compositionInfo
- Publication number
- JP3538820B2 JP3538820B2 JP22871893A JP22871893A JP3538820B2 JP 3538820 B2 JP3538820 B2 JP 3538820B2 JP 22871893 A JP22871893 A JP 22871893A JP 22871893 A JP22871893 A JP 22871893A JP 3538820 B2 JP3538820 B2 JP 3538820B2
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- liquid crystal
- group
- compound
- general formula
- substituted
- Prior art date
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 51
- 125000000113 cyclohexyl group Chemical class [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 title claims description 20
- 239000000203 mixture Substances 0.000 title claims description 20
- 125000004991 fluoroalkenyl group Chemical group 0.000 title description 4
- 150000001875 compounds Chemical class 0.000 claims description 42
- 229910052731 fluorine Inorganic materials 0.000 claims description 16
- 125000001153 fluoro group Chemical group F* 0.000 claims description 16
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims description 10
- 125000003342 alkenyl group Chemical group 0.000 claims description 5
- 125000004955 1,4-cyclohexylene group Chemical group [H]C1([H])C([H])([H])C([H])([*:1])C([H])([H])C([H])([H])C1([H])[*:2] 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 3
- 125000000876 trifluoromethoxy group Chemical group FC(F)(F)O* 0.000 claims description 3
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 2
- 125000001424 substituent group Chemical group 0.000 claims description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 2
- 125000003302 alkenyloxy group Chemical group 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 125000004786 difluoromethoxy group Chemical group [H]C(F)(F)O* 0.000 claims 1
- 239000012071 phase Substances 0.000 description 30
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 18
- -1 benzoic acid 4-substituted phenyl ester Chemical class 0.000 description 16
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 210000004027 cell Anatomy 0.000 description 7
- 150000001934 cyclohexanes Chemical class 0.000 description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 239000004988 Nematic liquid crystal Substances 0.000 description 6
- 238000001819 mass spectrum Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical class C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical class C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- RSSDDKYHSBBKIY-BTDRJHQTSA-N FC(CI)[C@@H]1CC[C@H](CC1)[C@@H]1CC[C@H](CC1)C1=CC(=C(C=C1)F)F Chemical compound FC(CI)[C@@H]1CC[C@H](CC1)[C@@H]1CC[C@H](CC1)C1=CC(=C(C=C1)F)F RSSDDKYHSBBKIY-BTDRJHQTSA-N 0.000 description 2
- PVNVXRFODANUFZ-BTDRJHQTSA-N FC=1C=C(C=CC1F)[C@@H]1CC[C@H](CC1)[C@@H]1CC[C@H](CC1)C(CF)I Chemical compound FC=1C=C(C=CC1F)[C@@H]1CC[C@H](CC1)[C@@H]1CC[C@H](CC1)C(CF)I PVNVXRFODANUFZ-BTDRJHQTSA-N 0.000 description 2
- LQZMLBORDGWNPD-UHFFFAOYSA-N N-iodosuccinimide Chemical compound IN1C(=O)CCC1=O LQZMLBORDGWNPD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000004440 column chromatography Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002296 dynamic light scattering Methods 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- GRJJQCWNZGRKAU-UHFFFAOYSA-N pyridin-1-ium;fluoride Chemical compound F.C1=CC=NC=C1 GRJJQCWNZGRKAU-UHFFFAOYSA-N 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 2
- 235000017557 sodium bicarbonate Nutrition 0.000 description 2
- 125000004642 (C1-C12) alkoxy group Chemical group 0.000 description 1
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N Benzoic acid Natural products OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- NZNMSOFKMUBTKW-UHFFFAOYSA-N Cyclohexanecarboxylic acid Natural products OC(=O)C1CCCCC1 NZNMSOFKMUBTKW-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DWAQJAXMDSEUJJ-UHFFFAOYSA-M Sodium bisulfite Chemical compound [Na+].OS([O-])=O DWAQJAXMDSEUJJ-UHFFFAOYSA-M 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 125000002619 bicyclic group Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- VZFUCHSFHOYXIS-UHFFFAOYSA-N cycloheptane carboxylic acid Natural products OC(=O)C1CCCCCC1 VZFUCHSFHOYXIS-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000004785 fluoromethoxy group Chemical group [H]C([H])(F)O* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229940079827 sodium hydrogen sulfite Drugs 0.000 description 1
- 235000010267 sodium hydrogen sulphite Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Liquid Crystal Substances (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は電気光学的液晶表示材料
として有用な、(フルオロアルケニル)シクロヘキサン
誘導体である新規液晶化合物及びそれを含有する液晶組
成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel liquid crystal compound which is a (fluoroalkenyl) cyclohexane derivative and a liquid crystal composition containing the same, which are useful as an electro-optical liquid crystal display material.
【0002】[0002]
【従来の技術】液晶表示素子は、時計、電卓をはじめと
して、各種測定機器、自動車用パネル、ワープロ、電子
手帳、プリンター、コンピューター、テレビ等に用いら
れるようになっている。液晶表示方式としては、その代
表的なものにTN(捩れネマチック)型、STN(超捩
れネマチック)型、DS(動的光散乱)型、GH(ゲス
ト・ホスト)型あるいはFLC(強誘電性液晶)等が知
られているが、このうち現在最もよく用いられているの
はTN型及びSTN型である。また駆動方式としても従
来のスタティック駆動からマルチプレックス駆動が一般
的になり、更に単純マトリックス方式、最近ではアクテ
ィブマトリックス方式が実用化されている。これらのう
ち、アクティブマトリックス方式によると、最も高画質
の表示が可能であり、視野角が広く、高精細化、カラー
化が容易で、動画表示も可能であるので、今後の液晶表
示方式の主流になると考えられている。2. Description of the Related Art Liquid crystal display elements have been used in various measuring instruments, such as watches and calculators, automobile panels, word processors, electronic organizers, printers, computers, televisions, and the like. Typical liquid crystal display systems are TN (twisted nematic), STN (super twisted nematic), DS (dynamic light scattering), GH (guest-host), and FLC (ferroelectric liquid crystal). ) Are known, and among them, TN type and STN type are currently most frequently used. As a driving method, a multiplex driving is generally used instead of the conventional static driving, and a simple matrix method, more recently, an active matrix method has been put to practical use. Of these, the active matrix method can display the highest image quality, has a wide viewing angle, is easy to achieve high definition and color, and can display moving images. It is thought to be.
【0003】このアクティブマトリックス表示方式に用
いられる液晶材料には、通常の液晶表示と同様に、種々
の特性が要求されているが、特に(1)比抵抗が高く、
電圧の保持率に優れること、(2)しきい値電圧
(Vth)が低いこと、(3)液晶相の温度範囲が広いこ
と等が重要である。A liquid crystal material used in this active matrix display system is required to have various characteristics as in a normal liquid crystal display, but (1) particularly has a high specific resistance.
It is important that the voltage holding ratio is excellent, (2) the threshold voltage (V th ) is low, and (3) the temperature range of the liquid crystal phase is wide.
【0004】通常、液晶表示におけるしきい値電圧(V
th)は式(a)Usually, a threshold voltage (V) in a liquid crystal display is
th ) is the equation (a)
【0005】[0005]
【数1】 (Equation 1)
【0006】(式中、kは比例定数を、Kは弾性定数
を、Δεは誘電率異方性をそれぞれ表わす。)で表わさ
れるが、この式からわかるように、しきい値電圧を低く
するためには、液晶材料の弾性定数を小さくするか、あ
るいは誘電率異方性を大きくする必要がある。(Where k represents a proportional constant, K represents an elastic constant, and Δε represents a dielectric anisotropy.) As can be seen from this equation, the threshold voltage is reduced. For this purpose, it is necessary to reduce the elastic constant of the liquid crystal material or increase the dielectric anisotropy.
【0007】ところが、誘電率異方性の大きい液晶化合
物は極性が大きいので、このような化合物を用いて、高
い比抵抗値や高い電圧保持率を得ることはかなり困難で
ある。そのため、こうした目的には弾性定数の小さい液
晶材料が必要である。However, since a liquid crystal compound having a large dielectric anisotropy has a large polarity, it is very difficult to obtain a high specific resistance and a high voltage holding ratio using such a compound. Therefore, a liquid crystal material having a small elastic constant is required for such a purpose.
【0008】しかしながら、弾性定数の小さい2環性の
化合物は、それを添加することによって、液晶組成物の
液晶相の上限温度を大幅に低下させてしまうものがほと
んどである。However, most bicyclic compounds having a small elastic constant significantly lower the maximum temperature of the liquid crystal phase of the liquid crystal composition when added.
【0009】一方、液晶組成物の温度範囲を特に高温域
に広げるためには、3環性あるいは4環性の液晶相の上
限温度の高い化合物を添加する必要がある。しかしなが
ら、このように上限温度の高い化合物は弾性定数の大き
いものが多く、添加するとしきい値電圧を大きく上昇さ
せる傾向があった。そのため、誘電率異方性があまり大
きくなく、液晶相の温度範囲が高温域まで広く、且つし
きい値電圧が低い液晶組成物を得ることはかなり困難で
あった。On the other hand, in order to extend the temperature range of the liquid crystal composition to a particularly high temperature range, it is necessary to add a compound having a high maximum temperature of a tricyclic or tetracyclic liquid crystal phase. However, many compounds having such a high maximum temperature have a large elastic constant, and the addition thereof tends to greatly increase the threshold voltage. Therefore, it has been quite difficult to obtain a liquid crystal composition having a small dielectric anisotropy, a wide temperature range of a liquid crystal phase up to a high temperature range, and a low threshold voltage.
【0010】[0010]
【発明が解決しようとする課題】本発明が解決しようと
する課題は、以上の目的に応じ、液晶相の上限温度がよ
り高く、且つ誘電率異方性があまり大きくないにもかか
わらず、添加により、しきい値電圧をほとんど上昇させ
ない化合物を提供し、またその化合物を含有し、液晶相
の温度範囲が高温域まで広く、しきい値電圧が低く、且
つ誘電率異方性があまり大きくない液晶組成物を提供す
ることにある。SUMMARY OF THE INVENTION The problem to be solved by the present invention is to solve the above problems even though the maximum temperature of the liquid crystal phase is higher and the dielectric anisotropy is not so large. Provides a compound that hardly raises the threshold voltage, and contains the compound, the temperature range of the liquid crystal phase is wide up to a high temperature range, the threshold voltage is low, and the dielectric anisotropy is not so large. It is to provide a liquid crystal composition.
【0011】[0011]
【課題を解決するための手段】本発明は、上記課題を解
決するために、一般式(I)According to the present invention, there is provided a compound represented by the following general formula (I):
【0012】[0012]
【化2】 Embedded image
【0013】(式中、R1は水素原子又は炭素原子数1
〜12のアルキル基を表わすが、好ましくは水素原子又
は炭素原子数1〜5の直鎖状アルキル基を表わし、特に
水素原子が好ましい。X1及びX2のうち、一方は水素原
子を表わし、他方はフッ素原子を表わすが、好ましくは
X1はフッ素原子を、X2は水素原子を表わす。但し、X
2がフッ素原子である場合、R1は炭素原子数1〜12の
アルキル基を表わす。mは0又は1を表わし、好ましく
はm=1である。環Aは1,4−シクロヘキシレン基又
はフッ素原子により置換されていてもよい1,4−フェ
ニレン基を表わすが、好ましくは1,4−シクロヘキシ
レン基を表わす。Y1及びY2はそれぞれ独立的に、単結
合又は−CH2CH2−を表わすが、好ましくはY1は単
結合を表わし、特にY1及びY2が共に単結合であること
が好ましい。Z1はフッ素原子、塩素原子、シアノ基、
トリフルオロメチル基、トリフルオロメトキシ基、ジフ
ルオロメトキシ基、炭素原子数1〜12のアルキル基、
炭素原子数1〜12のアルコキシル基、炭素原子数3〜
12のアルケニル基又は炭素原子数3〜12のアルケニ
ルオキシ基を表わすが、好ましくはフッ素原子、塩素原
子、トリフルオロメトキシ基を表わし、特にフッ素原子
が好ましい。Z2及びZ3はそれぞれ独立的に、フッ素原
子又は水素原子を表わし、シクロヘキサン環の2つの置
換基はトランス配置である。)で表わされる(フルオロ
アルケニル)シクロヘキサン誘導体を提供する。(Where R1Is hydrogen atom or carbon atom number 1
~ 12 alkyl groups, preferably a hydrogen atom or
Represents a linear alkyl group having 1 to 5 carbon atoms,
Hydrogen atoms are preferred. X1And XTwoOne of them is a hydrogen source
And the other represents a fluorine atom, preferably
X1Represents a fluorine atom, XTwoRepresents a hydrogen atom. Where X
TwoIs a fluorine atom, R1Represents 1 to 12 carbon atoms
Represents an alkyl group. m represents 0 or 1, and is preferably
Is m = 1. Ring A is a 1,4-cyclohexylene group or
Is 1,4-phenyl which may be substituted by a fluorine atom
Represents a nylene group, preferably 1,4-cyclohexyl
Represents a len group. Y1And YTwoAre each independently connected
Or -CHTwoCHTwo-, Preferably Y1Is simply
Represents a bond, especially Y1And YTwoAre both single bonds
Is preferred. Z1Is a fluorine atom, a chlorine atom, a cyano group,
Trifluoromethyl group, trifluoromethoxy group, dif
A fluoromethoxy group, an alkyl group having 1 to 12 carbon atoms,
C1-C12 alkoxyl group, C3-C3
12 alkenyl groups or alkenyl having 3 to 12 carbon atoms
Represents a hydroxy group, preferably a fluorine atom or a chlorine atom.
Represents a trifluoromethoxy group, especially a fluorine atom
Is preferred. ZTwoAnd ZThreeAre each independently a fluorine atom
Represents a hydrogen atom or a hydrogen atom.
The substituents are in the trans configuration. ) (Fluoro
(Alkenyl) cyclohexane derivatives.
【0014】また、R1がアルキル基である場合、シク
ロヘキサン環とR1の配置が、トランスあるいはシス配
置のものが存在するが、トランス配置のものが液晶性に
優れているので好ましい。When R 1 is an alkyl group, the cyclohexane ring and R 1 may be in the trans or cis configuration, but the trans configuration is preferred because of excellent liquid crystallinity.
【0015】本発明の一般式(I)で表わされる化合物
は、例えば、以下のようにして製造することができる。The compound represented by the general formula (I) of the present invention can be produced, for example, as follows.
【0016】[0016]
【化3】 Embedded image
【0017】(式中、R1、Y1、m、環A、Y2、Z1、
Z2及びZ3は一般式(I)におけると同じ意味を表わ
す。)
対応する一般式(II)の1−アルケニルシクロヘキサ
ン誘導体を、N−ヨードこはく酸イミド(NIS)及び
弗化水素−ピリジンと反応させることにより、一般式
(IIIa)の(1−フルオロ−2−ヨードアルキル)
シクロヘキサン誘導体及び一般式(IIIb)の(2−
フルオロ−1−ヨードアルキル)シクロヘキサン誘導体
を得る。(Wherein R 1 , Y 1 , m, ring A, Y 2 , Z 1 ,
Z 2 and Z 3 have the same meanings as in formula (I). ) By reacting the corresponding 1-alkenylcyclohexane derivative of the general formula (II) with N-iodosuccinimide (NIS) and hydrogen fluoride-pyridine, Iodoalkyl)
A cyclohexane derivative and a compound represented by the general formula (IIIb):
A (fluoro-1-iodoalkyl) cyclohexane derivative is obtained.
【0018】ここで、R1が水素原子である場合は、主
として一般式(IIIa)の化合物が得られるが、R1
がアルキル基である場合は、一般式(IIIa)と(I
IIb)の化合物がほぼ半量ずつ得られる。ただし、こ
れらは通常の精製方法により分離が可能であり、あるい
は分離せず混合物の状態で使用することも可能である。[0018] Here, when R 1 is a hydrogen atom, primarily compounds of general formula (IIIa) is obtained, R 1
Is an alkyl group, the general formulas (IIIa) and (I
The compound of IIb) is obtained approximately in half. However, these can be separated by an ordinary purification method, or they can be used in the form of a mixture without separation.
【0019】この一般式(IIIa)及び(IIIb)
の化合物を、1,8−ジアザビシクロ−[5,4,0]
−7−ウンデセン(DBU)等の塩基と反応させること
により、一般式(Ia)の(1−フルオロアルケニル)
シクロヘキサン誘導体及び一般式(Ib)の(2−フル
オロアルケニル)シクロヘキサン誘導体を得ることがで
きる。Formulas (IIIa) and (IIIb)
With 1,8-diazabicyclo- [5,4,0]
By reacting with a base such as -7-undecene (DBU), (1-fluoroalkenyl) of the general formula (Ia)
Cyclohexane derivatives and (2-fluoroalkenyl) cyclohexane derivatives of the general formula (Ib) can be obtained.
【0020】一般式(I)において、R1がアルキル基
である場合、末端アルケニル基がトランス配置である一
般式(II)の化合物からは、一般式(I)のフルオロ
アルケニル基において、R1とシクロヘキサン環がシス
配置の化合物が得られ、シス配置の一般式(II)の化
合物からはトランス配置の一般式(I)の化合物が得ら
れる。前述のように、一般式(I)のフルオロアルケニ
ル基におけるR1とシクロヘキサン環はトランス配置が
好ましいので、原料として用いる一般式(II)の化合
物はシス体が好ましい。In the general formula (I), when R 1 is an alkyl group, from the compound of the general formula (II) in which the terminal alkenyl group is in a trans configuration, in the fluoroalkenyl group of the general formula (I), R 1 And a compound having a cyclohexane ring in cis configuration is obtained, and a compound in general formula (I) in trans configuration is obtained from a compound of general formula (II) in cis configuration. As described above, R 1 and the cyclohexane ring in the fluoroalkenyl group of the general formula (I) preferably have a trans configuration, and therefore, the compound of the general formula (II) used as a raw material is preferably a cis form.
【0021】斯くして製造される一般式(I)で表わさ
れる化合物の代表例を第1表に掲げる。Representative examples of the compound represented by the general formula (I) thus produced are shown in Table 1.
【0022】[0022]
【表1】 [Table 1]
【0023】(表中、Crは結晶相を、Nはネマチック
相を、Iは等方性液体相をそれぞれ表わす。)
第1表から、一般式(I)で表わされる化合物はネマチ
ック相の上限温度がかなり高いので、汎用の母体液晶に
添加することにより、その液晶相を高温域に拡大するこ
とも可能である。(In the table, Cr represents a crystal phase, N represents a nematic phase, and I represents an isotropic liquid phase.) From Table 1, the compound represented by the general formula (I) represents the upper limit of the nematic phase. Since the temperature is considerably high, it is possible to expand the liquid crystal phase to a high temperature range by adding it to a general-purpose base liquid crystal.
【0024】後述の実施例にも示したように、本発明の
一般式(I)で表わされる化合物は、他のネマチック液
晶化合物との混合物の状態で、特にTN型あるいはST
N型といった電界効果型表示セルの材料として使用する
ことができ、アクティブマトリックス駆動用液晶材料の
構成成分として特に適している。As shown in the examples described later, the compound represented by the general formula (I) of the present invention is in the form of a mixture with another nematic liquid crystal compound, particularly, TN type or ST type.
It can be used as a material for an N-type field-effect display cell, and is particularly suitable as a component of an active matrix driving liquid crystal material.
【0025】このように、本発明の一般式(I)で表わ
される化合物と混合して使用することのできるネマチッ
ク液晶化合物の好ましい代表例としては、例えば、4−
置換安息香酸4−置換フェニルエステル、4−置換シク
ロヘキサンカルボン酸4−置換フェニルエステル、4−
置換シクロヘキサンカルボン酸4’−置換ビフェニリル
エステル、4−(4−置換シクロヘキサンカルボニルオ
キシ)安息香酸4−置換フェニルエステル、4−(4−
置換シクロヘキシル)安息香酸4−置換フェニルエステ
ル、4−(4−置換シクロヘキシル)安息香酸4−置換
シクロヘキシルエステル、4,4’−置換ビフェニル、
1−(4−置換フェニル)−4−置換シクロヘキサン、
4,4”−置換ターフェニル、1−(4’−置換ビフェ
ニリル)−4−置換シクロヘキサン、1−(4−置換シ
クロヘキシル)−4−(4−置換フェニル)シクロヘキ
サン、2−(4−置換フェニル)−5−置換ピリミジ
ン、2−(4’−置換ビフェニリル)−5−置換ピリミ
ジンなどを挙げることができる。Preferred examples of the nematic liquid crystal compound which can be used by mixing with the compound represented by formula (I) of the present invention include, for example, 4-nematic liquid crystal compounds.
Substituted benzoic acid 4-substituted phenyl ester, 4-substituted cyclohexanecarboxylic acid 4-substituted phenyl ester, 4-substituted
Substituted cyclohexanecarboxylic acid 4'-substituted biphenylyl ester, 4- (4-substituted cyclohexanecarbonyloxy) benzoic acid 4-substituted phenyl ester, 4- (4-
4-substituted cyclohexyl) benzoic acid phenyl ester, 4- (4-substituted cyclohexyl) benzoic acid 4-substituted cyclohexyl ester, 4,4′-substituted biphenyl,
1- (4-substituted phenyl) -4-substituted cyclohexane,
4,4 "-substituted terphenyl, 1- (4'-substituted biphenylyl) -4-substituted cyclohexane, 1- (4-substituted cyclohexyl) -4- (4-substituted phenyl) cyclohexane, 2- (4-substituted phenyl) ) -5-substituted pyrimidine, 2- (4'-substituted biphenylyl) -5-substituted pyrimidine and the like.
【0026】また、特にアクティブマトリックス用とし
ては、4,4’−置換ビフェニル、1−(4−置換フェ
ニル)−4−置換シクロヘキサン、4,4”−置換ター
フェニル、1−(4’−置換ビフェニリル)−4−置換
シクロヘキサン、1−(4−置換シクロヘキシル)−4
−(4−置換フェニル)シクロヘキサンなどが好まし
い。Particularly, for active matrices, 4,4′-substituted biphenyl, 1- (4-substituted phenyl) -4-substituted cyclohexane, 4,4 ″ -substituted terphenyl, 1- (4′-substituted) Biphenylyl) -4-substituted cyclohexane, 1- (4-substituted cyclohexyl) -4
-(4-Substituted phenyl) cyclohexane and the like are preferred.
【0027】本発明の一般式(I)の化合物の効果は、
例えば、以下の例からも明らかである。現在、ネマチッ
ク液晶材料として汎用されている母体液晶(A)The effect of the compound of the general formula (I) of the present invention is as follows:
For example, it is clear from the following example. Base liquid crystal (A), which is currently widely used as a nematic liquid crystal material
【0028】[0028]
【化4】 Embedded image
【0029】(式中、シクロヘキサン環はトランス配置
を表わし、「%」は「重量%」を意味する。)は54.
5℃以下でネマチック相を示し、誘電率異方性(Δε)
は+6.7であり、これを用いて作製したTNセルのし
きい値電圧(Vth)は1.60Vであった。(Wherein the cyclohexane ring represents the trans configuration, and “%” means “% by weight”).
Shows a nematic phase at 5 ° C or less and dielectric anisotropy (Δε)
Was +6.7, and the threshold voltage (V th ) of the TN cell manufactured using the same was 1.60 V.
【0030】この母体液晶(A)80重量%及び第1表
中の(No.1)の化合物20重量%からなる液晶組成
物(M−1)を調製した。この(M−1)のネマチック
相の上限温度は60.1℃と大きく上昇した。また、Δ
εは+5.8とやや小さくなった。次に、この組成物を
用いて同様にしてセルを作製し、Vthを測定したとこ
ろ、ネマチック相の上限温度が高くなり、Δεが小さく
なったにもかかわらず、1.64Vとその上昇はわずか
であった。これは(No.1)の化合物の弾性定数
(K)が比較的小さいことによるものと考えられる。A liquid crystal composition (M-1) comprising 80% by weight of the base liquid crystal (A) and 20% by weight of the compound (No. 1) in Table 1 was prepared. The maximum temperature of the nematic phase of (M-1) was greatly increased to 60.1 ° C. Also, Δ
ε was slightly reduced to +5.8. Next, a cell was prepared in the same manner using this composition, and V th was measured. As a result, although the upper limit temperature of the nematic phase was increased and Δε was decreased, the increase was 1.64 V and the increase was 1.64 V. It was slight. This is considered to be because the elastic constant (K) of the compound (No. 1) was relatively small.
【0031】以上の結果から、一般式(I)で表わされ
る化合物はネマチック液晶相を示す母体液晶に添加する
ことにより、しきい値電圧をほとんど上昇させることな
く、液晶相の温度範囲を高温域に拡大できることが明ら
かである。From the above results, the compound represented by the general formula (I) can be added to a base liquid crystal exhibiting a nematic liquid crystal phase to increase the temperature range of the liquid crystal phase in a high temperature range without substantially increasing the threshold voltage. It is clear that it can be expanded to:
【0032】次に、特にアクティブマトリックス用とし
て好適な母体液晶(B)Next, a base liquid crystal (B) particularly suitable for an active matrix
【0033】[0033]
【化5】 Embedded image
【0034】(式中、シクロヘキサン環はトランス配置
を表わす。)を調製したところ、116.7℃以下でネ
マチック相を示し、誘電率異方性(Δε)は+4.7で
あり、これを用いて作製したTNセルのしきい値電圧
(Vth)は2.43Vである。(Wherein the cyclohexane ring represents a trans configuration), a nematic phase was obtained at 116.7 ° C. or less, and the dielectric anisotropy (Δε) was +4.7. The threshold voltage (V th ) of the TN cell manufactured as described above is 2.43 V.
【0035】この母体液晶(B)80重量%及び(N
o.1)の化合物20重量%からなる液晶組成物(M−
2)を調製したところ、ネマチック相の上限温度は11
2℃とわずかに低下した。また、Δεは+3.7と非常
に小さくなった。しかしながら、同様にしてVthを測定
したところ、Δεが減少しているにもかかわらず、2.
44Vとほとんど変化がなかった。従って、(No.
1)の化合物は誘電率異方性(Δε)を低く抑えること
ができるので、高い比抵抗と電圧保持率を必要とするア
クティブマトリックス用の液晶材料としても好適である
ことが理解できる。The parent liquid crystal (B) 80% by weight and (N
o. A liquid crystal composition (M-
When 2) was prepared, the maximum temperature of the nematic phase was 11
The temperature dropped slightly to 2 ° C. Δε was very small at +3.7. However, when V th was measured in the same manner, despite the fact that Δε decreased, 2.
There was almost no change to 44V. Therefore, (No.
Since the compound of 1) can suppress the dielectric anisotropy (Δε) to be low, it can be understood that the compound is also suitable as a liquid crystal material for an active matrix that requires a high specific resistance and a high voltage holding ratio.
【0036】[0036]
【実施例】以下に本発明の実施例を示し、本発明を更に
説明する。しかしながら、本発明はこれらの実施例に限
定されるものではない。EXAMPLES Examples of the present invention are shown below to further explain the present invention. However, the invention is not limited to these examples.
【0037】なお、相転移温度の測定は温度調節ステー
ジを備えた偏光顕微鏡及び示差走査熱量計(DSC)を
併用して行った。また、化合物の構造は核磁気共鳴スペ
クトル(1H−NMR)、赤外吸収スペクトル(I
R)、質量スペクトル(MS)等により確認した。IR
における(KBr)は錠剤成形による測定を表わす。N
MRにおけるCDCl3は溶媒を表わし、Jはカップリ
ング定数を表わす。sは1重線、dは2重線、tは3重
線、qは4重線、quintetは5重線、mは多重線
を表わす。また、例えばddは2重の2重線を表わす。
MSにおけるM+は親ピークを表わし、( )内はその
ピークの相対強度を表わす。また、組成物における
「%」は「重量%」を意味する。
(実施例1) 3,4−ジフルオロ−1−[トランス−
4−[トランス−4−(1−フルオロエテニル)シクロ
ヘキシル]シクロヘキシル]ベンゼン(No.1の化合
物)の合成
(1−a) 3,4−ジフルオロ−1−[トランス−4
−[トランス−4−(1−フルオロ−2−ヨードエチ
ル)シクロヘキシル]シクロヘキシル]ベンゼンの合成The measurement of the phase transition temperature was carried out using a polarizing microscope equipped with a temperature control stage and a differential scanning calorimeter (DSC). The structure of the compound is represented by a nuclear magnetic resonance spectrum ( 1 H-NMR) and an infrared absorption spectrum (I
R), mass spectrum (MS) and the like. IR
In (KBr) represents the measurement by tablet molding. N
CDCl 3 in MR represents a solvent, and J represents a coupling constant. s represents a singlet, d represents a doublet, t represents a triplet, q represents a quadruple, quintet represents a quintuple, and m represents a multiplet. For example, dd represents a double double line.
M + in MS represents a parent peak, and the value in parentheses represents the relative intensity of the peak. “%” In the composition means “% by weight”. (Example 1) 3,4-difluoro-1- [trans-
Synthesis of 4- [trans-4- (1-fluoroethenyl) cyclohexyl] cyclohexyl] benzene (Compound No. 1) (1-a) 3,4-difluoro-1- [trans-4
Synthesis of-[trans-4- (1-fluoro-2-iodoethyl) cyclohexyl] cyclohexyl] benzene
【0038】[0038]
【化6】 Embedded image
【0039】3,4−ジフルオロ−1−[トランス−4
−(トランス−4−エテニルシクロヘキシル)シクロヘ
キシル]ベンゼン8.82g(29mmol)のジクロ
ロメタン(80ml)溶液に、N−ヨードこはく酸イミ
ド(NIS)9.8g(43.5mmol)を加えた
後、0℃で弗化水素−ピリジン溶液2.5mlを加え、
3時間攪拌した。反応液を飽和炭酸水素ナトリウム水溶
液と亜硫酸水素ナトリウム水溶液(1/1)300ml
に注ぎ、反応生成物をジクロロメタン60mlで3回抽
出し、抽出液を飽和食塩水50mlで洗浄した後、無水
硫酸ナトリウムで乾燥した。減圧濃縮した後、得られた
残渣をカラムクロマトグラフィー(Kieselgel
60、ヘキサン/酢酸エチル=80/1)を用いて精
製して、3,4−ジフルオロ−1−[トランス−4−
[トランス−4−(1−フルオロ−2−ヨードエチル)
シクロヘキシル]シクロヘキシル]ベンゼン8.26g
(収率:64%)及び、3,4−ジフルオロ−1−[ト
ランス−4−[トランス−4−(2−フルオロ−1−ヨ
ードエチル)シクロヘキシル]シクロヘキシル]ベンゼ
ン1.12g(収率:9%)を得た。
3,4−ジフルオロ−1−[トランス−4−[トランス
−4−(1−フルオロ−2−ヨードエチル)シクロヘキ
シル]シクロヘキシル]ベンゼン
無色板状晶
相転移温度(℃):Cr87 N105 I
IR(KBr):2950,2880,1610,15
20,1450,1280,1120,830,780
cm-1 1
H NMR(CDCl3):δ=0.95〜1.22
(m,8H),1.36(quintet,J=12.
4Hz,2H),1.60〜2.03(m,9H),
2.41(tt,J=12.2and3.5Hz,1
H),3.31(ddd,J=21.7,11.1an
d6.5Hz,1H),3.40(ddd,J=23.
6,11.1and3.9Hz,1H),4.15(d
td,J=47.2,6.4and3.9Hz,1
H),6.89(ddt,J=6.3,4.3and
2.1Hz,1H),6.99(ddd,J=11.
9,7.7and2.1Hz,1H),7.05(d
t,J=10.4and8.4Hz,1H)
MS: m/z 450(M+,100),140(5
5),127(62)
元素分析:C20H26F3Iとして
計算値:C,53.34%;H,5.82%
実測値:C,53.11%;H,5.71%
3,4−ジフルオロ−1−[トランス−4−[トランス
−4−(2−フルオロ−1−ヨードエチル)シクロヘキ
シル]シクロヘキシル]ベンゼン
融点 69℃
IR(KBr):2950,2880,1520,12
90,980cm-1 1
H NMR(CDCl3):δ=1.05〜1.30
(m,9H),1.36(quintet,J=12.
2Hz,2H),1.72〜1.94(m,8H),
2.41(tt,J=12.4and3.6Hz,1
H),4.22〜4.31(m,1H),4.59(d
dd,J=47.6,9.6and8.5Hz,1
H),4.65(ddd,J=47.1,9.7and
5.7Hz,1H),6.89(ddt,J=6.3,
4.3and2.1Hz,1H),6.98(ddd,
J=11.9,7.7and2.1Hz,1H),7.
04(dt,J=10.4and8.4Hz,1H)
MS: m/z 450(M+,21),323(4
6),127(100)
元素分析:C20H26F3Iとして
計算値:C,53.34%;H,5.82%
実測値:C,53.16%;H,5.71%
(1−b) 3,4−ジフルオロ−1−[トランス−4
−[トランス−4−(1−フルオロエテニル)シクロヘ
キシル]シクロヘキシル]ベンゼンの合成3,4-difluoro-1- [trans-4
9.8 g (43.5 mmol) of N-iodosuccinimide (NIS) was added to a solution of 8.82 g (29 mmol) of-(trans-4-ethenylcyclohexyl) cyclohexyl] benzene in dichloromethane (80 ml). At 25 ° C., 2.5 ml of a hydrogen fluoride-pyridine solution was added,
Stir for 3 hours. The reaction solution is a saturated aqueous sodium hydrogen carbonate solution and a sodium hydrogen sulfite aqueous solution (1/1) 300 ml
The reaction product was extracted three times with 60 ml of dichloromethane, and the extract was washed with 50 ml of saturated saline and dried over anhydrous sodium sulfate. After concentration under reduced pressure, the obtained residue was subjected to column chromatography (Kieselgel).
60, hexane / ethyl acetate = 80/1) to give 3,4-difluoro-1- [trans-4-.
[Trans-4- (1-fluoro-2-iodoethyl)
8.26 g of [cyclohexyl] cyclohexyl] benzene
(Yield: 64%) and 1.12 g of 3,4-difluoro-1- [trans-4- [trans-4- (2-fluoro-1-iodoethyl) cyclohexyl] cyclohexyl] benzene (yield: 9% ) Got. 3,4-difluoro-1- [trans-4- [trans-4- (1-fluoro-2-iodoethyl) cyclohexyl] cyclohexyl] benzene colorless plate crystal phase transition temperature (° C.): Cr87N105I IR (KBr) : 2950, 2880, 1610, 15
20, 1450, 1280, 1120, 830, 780
cm -1 1 H NMR (CDCl 3 ): δ = 0.95~1.22
(M, 8H), 1.36 (quintet, J = 12.
4Hz, 2H), 1.60 to 2.03 (m, 9H),
2.41 (tt, J = 12.2 and 3.5 Hz, 1
H), 3.31 (ddd, J = 21.7, 11.1an
d6.5 Hz, 1H), 3.40 (ddd, J = 23.
6, 11.1 and 3.9 Hz, 1H), 4.15 (d
td, J = 47.2, 6.4 and 3.9 Hz, 1
H), 6.89 (ddt, J = 6.3, 4.3and)
2.1Hz, 1H), 6.99 (ddd, J = 11.
9, 7.7 and 2.1 Hz, 1H), 7.05 (d
t, J = 10.4 and 8.4 Hz, 1H) MS: m / z 450 (M + , 100), 140 (5
5), 127 (62) Elemental analysis: C 20 H 26 F 3 I Calculated: C, 53.34%; H, 5.82% Found: C, 53.11%; H, 5.71% 3,4-difluoro-1- [trans-4- [trans-4- (2-fluoro-1-iodoethyl) cyclohexyl] cyclohexyl] benzene melting point 69 ° C. IR (KBr): 2950, 2880, 1520, 12
90,980cm -1 1 H NMR (CDCl 3 ): δ = 1.05~1.30
(M, 9H), 1.36 (quintet, J = 12.
2Hz, 2H), 1.72-1.94 (m, 8H),
2.41 (tt, J = 12.4 and 3.6 Hz, 1
H), 4.22 to 4.31 (m, 1H), 4.59 (d
dd, J = 47.6, 9.6 and 8.5 Hz, 1
H), 4.65 (ddd, J = 47.1, 9.7 and
5.7 Hz, 1 H), 6.89 (ddt, J = 6.3,
4.3 and 2.1 Hz, 1H), 6.98 (ddd,
J = 11.9, 7.7 and 2.1 Hz, 1H), 7.
04 (dt, J = 10.4 and 8.4 Hz, 1H) MS: m / z 450 (M + , 21), 323 (4
6), 127 (100) Elementary analysis: C 20 H 26 F 3 I Calculated: C, 53.34%; H, 5.82% Found: C, 53.16%; H, 5.71% (1-b) 3,4-difluoro-1- [trans-4
Synthesis of-[trans-4- (1-fluoroethenyl) cyclohexyl] cyclohexyl] benzene
【0040】[0040]
【化7】 Embedded image
【0041】上記(1−a)で得られた3,4−ジフル
オロ−1−[トランス−4−[トランス−4−(1−フ
ルオロ−2−ヨードエチル)シクロヘキシル]シクロヘ
キシル]ベンゼン7.07g(15.7mmol)のジ
クロロメタン30ml溶液に、1,8−ジアザビシクロ
[5,4,0]−7−ウンデセン(DBU)11.75
ml(78.5mmol)を加え、8時間加熱還流し
た。反応液を飽和炭酸水素ナトリウム水溶液100ml
に注ぎ、反応生成物をジクロロメタン30mlで3回抽
出し、抽出液を飽和食塩水30mlで洗浄した後、無水
硫酸ナトリウムで乾燥した。減圧濃縮した後、得られた
残渣をカラムクロマトグラフィー(Kieselgel
60、ヘキサン/酢酸エチル=80/1)を用いて精
製して、3,4−ジフルオロ−1−[トランス−4−
[トランス−4−(1−フルオロエテニル)シクロヘキ
シル]シクロヘキシル]ベンゼン3.38g(収率:6
7%)を得た。更にエタノールから再結晶させて、精製
物2.26g(収率:53%)を得た。
無色板状晶
相転移温度(℃):Cr60 N101 I
IR(KBr):2950,2880,1675,15
20,1285,1220,870cm-1 1
H NMR(CDCl3):δ=1.00〜1.31
(m,8H),1.37(q,J=12.2Hz,2
H),1.58〜2.11(m,9H),2.41(t
t,J=12.1and3.4Hz,1H),4.17
(ddd,J=51.6,2.8and0.8Hz,1
H),4.44(dd,J=18.6and2.8H
z,1H),6.89(ddt,J=6.3,4.3a
nd2.1Hz,1H),6.98(ddd,J=1
1.9,7.8and2.1Hz,1H),7.05
(dt,J=10.4and8.4Hz,1H)
MS: m/z 322(M+,37),179(3
3),140(59),127(100),79(4
1),67(53),55(49),41(49)
元素分析:C20H25F3として
計算値:C,74.51%;H,7.82%
実測値:C,74.2% ;H,7.79%
(実施例2) 液晶組成物の調製(1)
以下の組成からなる母体液晶(A)7.07 g (15) of 3,4-difluoro-1- [trans-4- [trans-4- (1-fluoro-2-iodoethyl) cyclohexyl] cyclohexyl] benzene obtained in the above (1-a) 1.7 mmol) in dichloromethane (30 ml), 1,8-diazabicyclo [5,4,0] -7-undecene (DBU) 11.75.
ml (78.5 mmol) was added, and the mixture was heated under reflux for 8 hours. The reaction solution was saturated aqueous sodium hydrogen carbonate solution (100 ml).
The reaction product was extracted three times with 30 ml of dichloromethane, and the extract was washed with 30 ml of a saturated saline solution and dried over anhydrous sodium sulfate. After concentration under reduced pressure, the obtained residue was subjected to column chromatography (Kieselgel).
60, hexane / ethyl acetate = 80/1) to give 3,4-difluoro-1- [trans-4-.
3.38 g of [trans-4- (1-fluoroethenyl) cyclohexyl] cyclohexyl] benzene (yield: 6
7%). Recrystallization from ethanol gave 2.26 g of a purified product (yield: 53%). Colorless plate crystal phase transition temperature (° C): Cr60N101I IR (KBr): 2950, 2880, 1675, 15
20,1285,1220,870cm -1 1 H NMR (CDCl 3 ): δ = 1.00~1.31
(M, 8H), 1.37 (q, J = 12.2 Hz, 2
H), 1.58-2.11 (m, 9H), 2.41 (t
t, J = 12.1 and 3.4 Hz, 1H), 4.17
(Ddd, J = 51.6, 2.8 and 0.8 Hz, 1
H), 4.44 (dd, J = 18.6 and 2.8H)
z, 1H), 6.89 (ddt, J = 6.3, 4.3a)
nd2.1 Hz, 1H), 6.98 (ddd, J = 1)
1.9, 7.8 and 2.1 Hz, 1H), 7.05
(Dt, J = 10.4 and 8.4 Hz, 1H) MS: m / z 322 (M + , 37), 179 (3
3), 140 (59), 127 (100), 79 (4
1), 67 (53), 55 (49), 41 (49) Elemental analysis: Calculated C 20 H 25 F 3: C , 74.51%; H, 7.82% Found: C, 74. H, 7.79% (Example 2) Preparation of liquid crystal composition (1) Base liquid crystal (A) having the following composition
【0042】[0042]
【化8】 Embedded image
【0043】(式中、シクロヘキサン環はトランス配置
を表わす。)を調製したところ、54.5℃以下でネマ
チック(N)相を示した。その物性値及びこれを用いて
作製したTNセルのしきい値電圧(Vth)は以下の通り
であった。(Wherein the cyclohexane ring represents a trans configuration) showed a nematic (N) phase at 54.5 ° C. or lower. The physical properties and the threshold voltage (V th ) of the TN cell manufactured using the same were as follows.
【0044】誘電率異方性(Δε) +6.7
屈折率異方性(Δn) 0.092
しきい値電圧(Vth) 1.60V
この母体液晶(A)80%及び実施例1の(No.1)
の化合物20%からなる液晶組成物(M−1)を調製し
た。この(M−1)のN相の上限温度(TN-I)及びそ
の物性値は以下の通りであった。Dielectric anisotropy (Δε) +6.7 Refractive index anisotropy (Δn) 0.092 Threshold voltage (V th ) 1.60 V 80% of the parent liquid crystal (A) and ( No. 1)
A liquid crystal composition (M-1) consisting of 20% of the compound of the formula (1) was prepared. The maximum temperature (T NI ) of the N phase of (M-1) and the physical properties thereof were as follows.
【0045】N相の上限温度(TN-I) 60.1℃
誘電率異方性(Δε) +5.0
屈折率異方性(Δn) 0.093
しきい値電圧(Vth) 1.64V
このように、ネマチック相の上限温度が上昇し、誘電率
異方性は小さくなっているにもかかわらず、しきい値電
圧はさほど上昇していない。前述の式(a)から考え
て、(No.1)の化合物の弾性定数は比較的小さいと
考えられる。
(実施例3) 液晶組成物の調製(2)
特にアクティブマトリックス用として好適な、フッ素系
の母体液晶(B)Maximum temperature of N phase (T NI ) 60.1 ° C. Dielectric anisotropy (Δε) +5.0 Refractive index anisotropy (Δn) 0.093 Threshold voltage (V th ) 1.64 V As described above, although the maximum temperature of the nematic phase increases and the dielectric anisotropy decreases, the threshold voltage does not increase so much. Considering the above formula (a), it is considered that the elastic constant of the compound of (No. 1) is relatively small. (Example 3) Preparation of liquid crystal composition (2) Fluorine-based base liquid crystal (B) particularly suitable for active matrix
【0046】[0046]
【化9】 Embedded image
【0047】(式中、シクロヘキサン環はトランス配置
を表わす。)を調製したところ、116.7℃以下でネ
マチック(N)相を示した。その物性値及びこれを用い
て作製したTNセルのしきい値電圧(Vth)は以下の通
りであった。When a cyclohexane ring represented a trans configuration, a nematic (N) phase was exhibited at 116.7 ° C. or lower. The physical properties and the threshold voltage (V th ) of the TN cell manufactured using the same were as follows.
【0048】誘電率異方性(Δε) +4.7
屈折率異方性(Δn) 0.090
しきい値電圧(Vth) 2.43V
この母体液晶(B)80%及び実施例1の(No.1)
の化合物20%からなる液晶組成物(M−2)を調製し
た。この(M−2)のN相の上限温度(TN-I)及びそ
の物性値は以下の通りであった。Dielectric anisotropy (Δε) +4.7 Refractive index anisotropy (Δn) 0.090 Threshold voltage (V th ) 2.43 V 80% of the base liquid crystal (B) and ( No. 1)
A liquid crystal composition (M-2) consisting of 20% of the compound of the formula (1) was prepared. The maximum temperature (T NI ) of the N phase of (M-2) and the physical properties thereof were as follows.
【0049】N相の上限温度(TN-I) 112.0℃
誘電率異方性(Δε) +3.7
屈折率異方性(Δn) 0.089
しきい値電圧(Vth) 2.44V
このように、誘電率異方性が小さくなっているにもかか
わらず、そのしきい値電圧はほとんど変化していない。Maximum temperature of N phase (T NI ) 112.0 ° C. Dielectric anisotropy (Δε) +3.7 Refractive index anisotropy (Δn) 0.089 Threshold voltage (V th ) 2.44 V As described above, although the dielectric anisotropy is small, the threshold voltage is hardly changed.
【0050】この組成物(M−2)の比抵抗は1013Ω
・cm以上と大きく、これを用いて作製したセルの電圧
保持率は98%以上と非常に高かった。以上の結果か
ら、本発明の一般式(I)の化合物は、母体液晶に添加
することにより、そのネマチック相上限温度やそのしき
い値電圧(Vth)をほとんど変化させずに誘電率異方性
を小さくできることが明らかである。
(実施例3) 熱安定性試験
実施例1で得られた(No.1)の化合物をアンプルに
封入し、100℃の定温器内に24時間放置した。放冷
した後、内容物をヘキサンに10%溶解し、その比抵抗
を測定したところ、加熱試験前のサンプルを用いて同様
に測定した比抵抗と全く変化がなかった。また、キャピ
ラリーガスクロマトグラフでその純度を測定したとこ
ろ、不純物は全く生成していなかった。The composition (M-2) has a specific resistance of 10 13 Ω.
Cm or more, and the voltage holding ratio of the cell manufactured using this was as high as 98% or more. From the above results, it was found that the compound of the general formula (I) of the present invention, when added to the base liquid crystal, has a dielectric anisotropy with almost no change in its maximum nematic phase temperature and its threshold voltage (V th ). It is clear that the characteristics can be reduced. (Example 3) Thermal stability test The compound of (No. 1) obtained in Example 1 was sealed in an ampoule, and left in a 100 ° C incubator for 24 hours. After cooling, the content was dissolved in hexane at 10%, and the specific resistance was measured. As a result, there was no change from the specific resistance similarly measured using the sample before the heating test. When the purity was measured by a capillary gas chromatograph, no impurities were generated.
【0051】[0051]
【発明の効果】本発明の一般式(I)で表わされる液晶
化合物は、実施例にも示したように、工業的にも容易に
製造でき、熱、光、水等に対し、化学的に非常に安定で
あり、ネマチック液晶として現在汎用されている母体液
晶との相溶性にも優れている。しかも、ネマチック相の
上限温度が高いうえに、母体液晶に添加しても、得られ
る液晶セルのしきい値電圧(Vth)はほとんど上昇しな
い。従って、液晶相の温度範囲が広く、且つ低電圧駆動
が要求される各種液晶表示素子の材料として用いること
ができる。更に、誘電率異方性があまり大きくないの
で、高い比抵抗と電圧保持率を必要とするアクティブマ
トリックス駆動用の液晶材料として非常に有用である。The liquid crystal compound represented by the general formula (I) of the present invention can be easily produced industrially as shown in the Examples, and chemically reacts with heat, light, water and the like. It is very stable and has excellent compatibility with the base liquid crystal which is currently widely used as a nematic liquid crystal. In addition, the upper limit temperature of the nematic phase is high, and the threshold voltage (V th ) of the obtained liquid crystal cell hardly increases even if it is added to the base liquid crystal. Therefore, it can be used as a material for various liquid crystal display elements that require a wide temperature range of the liquid crystal phase and low voltage driving. Further, since the dielectric anisotropy is not so large, it is very useful as a liquid crystal material for driving an active matrix which requires a high specific resistance and a high voltage holding ratio.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 楠本 哲生 神奈川県相模原市南台1−9−2−102 (72)発明者 佐藤 健一 神奈川県相模原市上溝35−11 (56)参考文献 特開 平2−184642(JP,A) 特表 平6−500343(JP,A) 独国特許出願公開4113054(DE,A 1) 独国特許出願公開4113309(DE,A 1) 独国特許出願公開4314085(DE,A 1) (58)調査した分野(Int.Cl.7,DB名) CA(STN) CAOLD(STN) REGISTRY(STN)──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Tetsuo Kusumoto 1-9-2-102 Minamidai, Sagamihara City, Kanagawa Prefecture (72) Inventor Kenichi Sato 35-11 Kamimizo, Sagamihara City, Kanagawa Prefecture (56) References JP2 -184642 (JP, A) Patent table 6-500343 (JP, A) German Patent Application Publication No. 4113054 (DE, A1) German Patent Application Publication 4113309 (DE, A1) German Patent Application Publication 4314085 (DE) , A 1) (58) Fields surveyed (Int. Cl. 7 , DB name) CA (STN) CAOLD (STN) REGISTRY (STN)
Claims (4)
キル基を表わし、X1及びX2のうち、一方は水素原子を
表わし、他方はフッ素原子を表わすが、X2がフッ素原
子である場合、R1は炭素原子数1〜12のアルキル基
を表わし、mは0又は1を表わし、環Aは1,4−シク
ロヘキシレン基又はフッ素原子により置換されていても
よい1,4−フェニレン基を表わし、Y1及びY2はそれ
ぞれ独立的に、単結合又は−CH2CH2−を表わし、Z
1はフッ素原子、塩素原子、シアノ基、トリフルオロメ
チル基、トリフルオロメトキシ基、ジフルオロメトキシ
基、炭素原子数1〜12のアルキル基、炭素原子数1〜
12のアルコキシル基、炭素原子数3〜12のアルケニ
ル基又は炭素原子数3〜12のアルケニルオキシ基を表
わし、Z2及びZ3はそれぞれ独立的に、フッ素原子又は
水素原子を表わし、シクロヘキサン環の2つの置換基は
トランス配置である。)で表わされる化合物。1. A compound of the general formula (I) (Wherein, R 1 represents a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, and one of X 1 and X 2 represents a hydrogen atom and the other represents a fluorine atom, but X 2 represents a fluorine atom In the formula, R 1 represents an alkyl group having 1 to 12 carbon atoms, m represents 0 or 1, and ring A is 1,4-cyclohexylene group or 1,4 which may be substituted by a fluorine atom. Y 1 and Y 2 each independently represent a single bond or —CH 2 CH 2 —;
1 is a fluorine atom, a chlorine atom, a cyano group, a trifluoromethyl group, a trifluoromethoxy group, a difluoromethoxy group, an alkyl group having 1 to 12 carbon atoms,
12 represents an alkoxyl group, an alkenyl group having 3 to 12 carbon atoms or an alkenyloxy group having 3 to 12 carbon atoms, Z 2 and Z 3 each independently represent a fluorine atom or a hydrogen atom, and a cyclohexane ring The two substituents are in the trans configuration. ).
を表わし、X1がフッ素原子を表わし、X2が水素原子を
表わす請求項1記載の化合物。2. The compound according to claim 1 , wherein in the formula (I), R 1 represents a hydrogen atom, X 1 represents a fluorine atom, and X 2 represents a hydrogen atom.
し、環Aが1,4−シクロヘキシレン基を表わし、Y1
及びY2が共に単結合を表わし、Z1及びZ2が共にフッ
素原子を表わし、Z3が水素原子を表わす請求項2記載
の化合物。3. In the general formula (I), m represents 1, ring A represents a 1,4-cyclohexylene group, and Y 1
3. The compound according to claim 2, wherein Y 2 and Y 2 both represent a single bond, Z 1 and Z 2 both represent a fluorine atom, and Z 3 represents a hydrogen atom.
る化合物を含有する液晶組成物。4. A liquid crystal composition containing the compound represented by the general formula (I) according to claim 1.
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