JP3524360B2 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereofInfo
- Publication number
- JP3524360B2 JP3524360B2 JP36075897A JP36075897A JP3524360B2 JP 3524360 B2 JP3524360 B2 JP 3524360B2 JP 36075897 A JP36075897 A JP 36075897A JP 36075897 A JP36075897 A JP 36075897A JP 3524360 B2 JP3524360 B2 JP 3524360B2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- electrode terminal
- semiconductor chip
- terminal block
- external electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置および
その製造方法に関し、特に、例えばセラミック基板上の
銅回路上に複数個の半導体チップを実装してなる大電力
半導体装置およびその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a high power semiconductor device in which a plurality of semiconductor chips are mounted on a copper circuit on a ceramic substrate and a manufacturing method thereof. Is.
【０００２】[0002]
【従来の技術】従来の大電力半導体装置、例えば、ＩＧ
ＢＴ、ＩＥＧＴ（ＩｎｊｅｃｔｉｏｎＥｎｈａｎｓｅｄ
Ｇａｔｅ Ｔｒａｎｓｉｓｔｏｒ）などの大電力トラ
ンジスタモジュールは、セラミック基板上に銅回路を直
接形成したＤＢＣ基板上に、複数個の半導体チップが実
装され、パッケージ内に収納する構造となっている。こ
のようなモジュールにおいては、各半導体チップの電極
端子はＤＢＣ基板上に銅回路の一部として形成される電
極端子台にワイヤボンデイングにより接続される。この
端子台はパッケージ外部に導出される外部電極端子と接
続されるが、この間は大電力トランジスタモジュールに
おいては大電流が流れるため、板状の導体を半田付けに
より接続したり、複数本のワイヤを並列にボンディング
して電流容量を大きくしている。2. Description of the Related Art Conventional high-power semiconductor devices, for example, IG
BT, IEGT (Injection Enhanced)
A high power transistor module such as a Gate Transistor has a structure in which a plurality of semiconductor chips are mounted on a DBC substrate in which a copper circuit is directly formed on a ceramic substrate and housed in a package. In such a module, the electrode terminals of each semiconductor chip are connected by wire bonding to an electrode terminal block formed on the DBC substrate as a part of a copper circuit. This terminal block is connected to the external electrode terminals that are led out of the package.During this time, a large current flows in the high-power transistor module, so a plate-shaped conductor can be connected by soldering or multiple wires can be connected. Bonding in parallel increases the current capacity.
【０００３】[0003]
【発明が解決しようとする課題】このような従来の大電
力半導体装置における電極端子台と外部電極端子との接
続方法として、板状の導体を半田付けにより接続する方
法は接合のために高熱が必要であり、装置自身に高い熱
が加えられること、半田と導体との熱膨張率の差によ
り、熱サイクルに対する信頼性に乏しいこと、半田材と
して一般的である鉛化合物はその毒性があるなど、多く
の問題がある。そしてこれらの問題は大電流になるほど
影響が大きくなり、特に、電気自動車のように、過酷な
自然環境下で用いられる場合には熱サイクルに対する信
頼性は極めて重要である。As a method of connecting the electrode terminal block and the external electrode terminal in such a conventional high-power semiconductor device, a method of connecting a plate-shaped conductor by soldering requires high heat for joining. It is necessary, high heat is applied to the device itself, lack of reliability for thermal cycle due to difference in coefficient of thermal expansion between solder and conductor, lead compounds that are common as solder materials are toxic, etc. , There are many problems. These problems become more serious as the electric current increases, and especially when used in a harsh natural environment such as an electric vehicle, reliability with respect to a heat cycle is extremely important.
【０００４】他方、ワイヤボンデイングにより接続する
方法は、断面積の大きなワイヤの接続が困難であるた
め、大電流用の配線のためには多数のワイヤを並列にボ
ンディングする。しかしワイヤボンデイングにおいて
は、一般に、ワイヤ径の少なくも１．５倍の接合面積が
必要となるため、全体としては大きな接合面積が必要と
なり、半導体装置の小形化を阻害する大きな要因となっ
ていた。On the other hand, in the method of connecting by wire bonding, it is difficult to connect a wire having a large cross-sectional area. Therefore, a large number of wires are bonded in parallel for wiring for a large current. However, in wire bonding, generally, a bonding area of at least 1.5 times the wire diameter is required, so that a large bonding area is required as a whole, which is a major factor inhibiting the miniaturization of semiconductor devices. .
【０００５】したがって本発明はこのような従来装置の
欠点を除去し、高い信頼性と省スペースを併せ持つ半導
体装置およびその製造方法を提供することを目的とする
ものである。Therefore, it is an object of the present invention to provide a semiconductor device having high reliability and space saving, and a method for manufacturing the same, by eliminating the drawbacks of the conventional device.
【０００６】[0006]
【課題を解決するための手段】本発明の半導体装置は、
セラミック基板上に固着された半導体チップと、この半
導体チップの電極端子が電気的に接続されるように前記
セラミック基板上に形成された電極端子台と、この電極
端子台に超音波接合によりその一端が接続され、少なく
ともこの一端部が、ピッカース硬度が 80 以下の銅又は銅
合金からなる板状に形成された外部電極端子と、この外
部電極端子の一部、前記セラミック基板、このセラミッ
ク基板上に固着された半導体チップおよび前記電極端子
台を収納するパッケージとを備えたことを特徴とするも
のである。The semiconductor device of the present invention comprises:
The semiconductor chip fixed on the ceramic substrate and this half
In order to electrically connect the electrode terminals of the conductor chip,
Electrode terminal block formed on ceramic substrate and this electrode
One end is connected to the terminal block by ultrasonic bonding,
This one end is copper or copper with a Pickers hardness of 80 or less.
The external electrode terminal made of alloy and shaped like a plate
Part of the electrode terminal, the ceramic substrate, the ceramic
A semiconductor chip fixed on a substrate and the electrode terminal
And a package for accommodating the table .
【０００７】また、本発明の半導体装置においては、前
記半導体チップは電力用半導体チップであり、また、前
記電極端子台は前記セラミック基板上に形成された銅回
路の一部であることを特徴とするものである。[0007] In the semiconductor device of the present invention, prior to
The semiconductor chip is a power semiconductor chip.
The electrode terminal block is a copper wire formed on the ceramic substrate.
It is characterized by being part of a road .
【０００８】次に、本発明の半導体装置の製造方法は、
セラミック基板上に半導体チップを固着する工程と、こ
の半導体チップの電極端子を前記セラミック基板上に固
着された電極端子台に電気的に接続する工程と、この電
極端子台に少なくともその一端が、ピッカース硬度 80 以
下の銅又は銅合金からなる板状の外部電極端子を超音波
接合により接続する工程と、この外部電極端子の一部、
前記セラミック基板、このセラミック基板上に配置され
た半導体チップおよび電極端子台をパッケージ内に収納
する工程とを備えたことを特徴とするものである。Next, a method of manufacturing a semiconductor device according to the present invention will be described.
The process of fixing the semiconductor chip on the ceramic substrate,
Of the semiconductor chip electrode terminals on the ceramic substrate.
And the process of electrically connecting to the attached electrode terminal block.
At least one end to electrode terminal board is, Vickers hardness of 80 or less
The plate-shaped external electrode terminal made of copper or copper alloy below is ultrasonic
The step of connecting by joining and a part of this external electrode terminal,
The ceramic substrate, arranged on this ceramic substrate
The semiconductor chip and electrode terminal block are stored in the package.
And a step of performing .
【０００９】また、本発明の半導体装置の製造方法にお
いては、前記半導体チップは電力用半導体チップであ
り、前記電極端子台は前記セラミック基板上に形成され
た銅回路の一部であることを特徴とするものである。In the method of manufacturing a semiconductor device of the present invention, the semiconductor chip is a power semiconductor chip.
The electrode terminal block is formed on the ceramic substrate.
It is characterized by being part of a copper circuit .
【００１０】[0010]
【発明の実施の形態】以下、本発明の一実施形態につい
て、図１乃至図３を参照して説明する。図１は本発明の
半導体装置として、大電力トランジスタモジュールの構
造を示す一部切欠斜視図であり、図２は図１に示した半
導体装置の要部を拡大して示す斜視図、図３は図１に示
した半導体装置内部の素子配置を示す平面図である。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a partially cutaway perspective view showing a structure of a high power transistor module as a semiconductor device of the present invention, FIG. 2 is an enlarged perspective view of a main part of the semiconductor device shown in FIG. 1, and FIG. FIG. 2 is a plan view showing an element arrangement inside the semiconductor device shown in FIG. 1.
【００１１】図示のトランジスタモジュールは、セラミ
ック基板上に銅回路を直接形成したＤＢＣ基板１１上
に、複数個の半導体チップ１２が実装され、樹脂ケース
１３内に収納されている。各半導体チップ１２の電極端
子はＤＢＣ基板１１上に銅回路の一部として形成される
電極端子台１４に複数本のボンデイングワイヤ１５によ
り接続される。この端子台１４は樹脂ケース１３の外部
に導出される外部電極端子１６と接続される。この外部
電極端子１６は大電力トランジスタモジュールにおいて
は大電流が流れるため、板状の導体、例えば銅板をプレ
ス加工等により、所定の形状に加工される。すなわち、
この外部電極端子１６は図２に示されるように、端子台
１４に接合されるほぼＬ字状に曲折された接合端部１６
−１と、この接合端部から樹脂ケース１３内の周辺部に
ほぼ水平に延長され、周辺部においてほぼ垂直方向に曲
折されて樹脂ケース１３の外部上面に導出される本体部
１６−２および樹脂ケース１３の上面において再びほぼ
水平方向に曲折形成される接続端部１６−３とにより構
成されている。この外部電極端子１６は、また、本体部
１６−２からほぼＴ字状に分岐され、それぞれの端部に
接合端部１６−１が形成されている。なお、図２におい
ては、一方の接合端部１６−１が接合される端子台は省
略されているが、図３の平面図に示すように、隣接する
半導体チップ１２の端子台１４に接合される。なお、外
部電極端子１６の形状は図３に示すように、樹脂ケース
１３内で配置された位置により、種々の形状に形成され
る。例えば、樹脂ケース１３の上辺に沿って配置された
外部電極端子１６の形状は、Ｔ字状の分岐を有する本体
部１６−２が２個合体されて共通の接続端部１６−３に
連結される形状、あるいは外部電極端子１６´で示すよ
うに、本体部１６´−２が３分岐され、これらの各分岐
部先端に接合端部１６´−１がそれぞれ形成されてい
る。また、樹脂ケース１３の下辺に沿って配置された外
部電極端子１６´´´の形状はＴ字状の分岐はなく、接
合端部は一方のみ、すなわち、Ｌ字状にに形成されてい
る。In the illustrated transistor module, a plurality of semiconductor chips 12 are mounted on a DBC substrate 11 in which a copper circuit is directly formed on a ceramic substrate and housed in a resin case 13. The electrode terminals of each semiconductor chip 12 are connected to an electrode terminal block 14 formed on the DBC substrate 11 as a part of a copper circuit by a plurality of bonding wires 15. The terminal block 14 is connected to external electrode terminals 16 that are led out of the resin case 13. Since a large current flows through the external electrode terminal 16 in a high power transistor module, a plate-shaped conductor, for example, a copper plate is processed into a predetermined shape by pressing or the like. That is,
As shown in FIG. 2, the external electrode terminal 16 is joined to the terminal base 14 and is joined to the terminal end 14 by bending it into a substantially L shape.
-1, and a main body portion 16-2 extending substantially horizontally from the joining end portion to a peripheral portion inside the resin case 13, bent in a substantially vertical direction at the peripheral portion, and led out to the outer upper surface of the resin case 13 and the resin. On the upper surface of the case 13, a connecting end portion 16-3 is formed by bending again in a substantially horizontal direction. The external electrode terminal 16 is also branched from the main body portion 16-2 into a substantially T-shape, and a joint end portion 16-1 is formed at each end portion. Although the terminal block to which one of the joining ends 16-1 is joined is omitted in FIG. 2, it is joined to the terminal blocks 14 of the adjacent semiconductor chips 12 as shown in the plan view of FIG. It As shown in FIG. 3, the external electrode terminals 16 are formed in various shapes depending on the position of the external electrode terminals 16 arranged in the resin case 13. For example, as for the shape of the external electrode terminal 16 arranged along the upper side of the resin case 13, two main body portions 16-2 having T-shaped branches are combined and connected to a common connection end portion 16-3. The main body portion 16'-2 is branched into three, as shown by the external shape or the external electrode terminal 16 ', and the joint end portion 16'-1 is formed at the tip of each branch portion. Further, the external electrode terminals 16 '''arranged along the lower side of the resin case 13 do not have a T-shaped branch, and only one joint end portion, that is, an L-shaped one is formed.
【００１２】外部電極端子１６、（１６´、１６´´
´）の接合端部１６−１は端子台１４に超音波ボンディ
ングにより接合される。表１乃至表３は外部電極端子１
６の接合端部１６−１と端子台１４との超音波ボンディ
ングによる接合についての実験結果を示すものである。External electrode terminals 16, (16 ', 16'')
The joint end 16-1 of ′) is joined to the terminal base 14 by ultrasonic bonding. Tables 1 to 3 show external electrode terminals 1
6 shows the results of experiments on the joining of the joining end portion 16-1 of No. 6 and the terminal block 14 by ultrasonic bonding.
【００１３】[0013]
【表１】 [Table 1]
【００１４】[0014]
【表２】 [Table 2]
【００１５】[0015]
【表３】 [Table 3]
【００１６】表１は接合端部１６−１の材料あるいは硬
度を異ならせ超音波ボンディング装置の動作条件を同一
条件で接合した結果を示している。すなわち、材料とし
てはＣｕ（銅）で硬度をはビッカース硬度（Ｈｖ）で５
０、８０、１２０、のもの、４２アロイ（ニッケル鉄合
金）およびリン青銅を用い、超音波ボンディング装置の
動作条件として、加重を０．１５メガパスカル（ＭＰ
ａ）、超音波の周波数を４０ｋＨｚ、振幅を２０μｍ、
パワーを３００ｗとした。なお、表中の上向きの矢印は
「同上」の条件であることを意味している。この実験結
果は、満足すべき接合力で接合されたかどうかを「接合
可否」で示しているが、４２アロイが他の材料に比較し
てやや不満足という結果となった。また、接合の結果、
端子台１４を構成するセラミック基板に損傷を生ずるか
否かを「セラミックダメージ」の欄に示しているが、ビ
ッカース硬度１２０のＣｕ、４２アロイの場合損傷が生
じ、ビッカース硬度８０のＣｕについても若干の損傷が
生じた。Table 1 shows the results of bonding under the same operating conditions of the ultrasonic bonding apparatus with different materials or hardness of the bonding end 16-1. That is, the material is Cu (copper), and the hardness is Vickers hardness (Hv) of 5
No. 0, 80, 120, 42 alloy (nickel iron alloy) and phosphor bronze were used, and the load was 0.15 megapascals (MP
a), ultrasonic frequency is 40 kHz, amplitude is 20 μm,
The power was set to 300w. The upward arrow in the table means that the condition is the same as above. The result of this experiment shows whether or not they were joined with a satisfactory joining force by "joinability", but 42 alloy was slightly unsatisfactory as compared with other materials. Also, as a result of joining,
Whether or not the ceramic substrate constituting the terminal block 14 is damaged is shown in the column of "ceramic damage", but Cu of Vickers hardness of 120 and 42 alloy cause damage, and Cu of Vickers hardness of 80 is also a little. Damage occurred.
【００１７】表２は同一の接合端部１６−１材料、すな
わち、ビッカース硬度５０のＣｕについて、超音波ボン
ディング装置の動作条件を変化させた場合の実験結果を
示すものである。この実験結果は、表１の場合と同様な
評価基準で示されているが、「接合可否」および「セラ
ミックダメージ」の両者を満足させるためには、超音波
ボンディング装置の動作条件を選定する必要があること
を示している。Table 2 shows the experimental results when the operating conditions of the ultrasonic bonding apparatus were changed with respect to the same material for the joining end portion 16-1, that is, Cu having a Vickers hardness of 50. The results of this experiment are shown in the same evaluation criteria as in Table 1, but the operating conditions of the ultrasonic bonding equipment must be selected in order to satisfy both "bondability" and "ceramic damage". Indicates that there is.
【００１８】表３は本発明の超音波ボンディングにより
接合された外部電極端子１６の接合端部１６−１と端子
台１４との接合部の熱サイクル試験の結果を、従来のは
んだ接合の場合と比較して示すものである。すなわち、
接合端部１６−１として幅２．５ｍｍ、厚さ０．８ｍｍ
のＣｕ板を用いて超音波ボンディングにより接合すると
ともに、比較品として同じ寸法のＣｕ板をＰｂ系のはん
だを用いて接合し、これらに対して−４０℃〜１２５℃
の熱サイクル試験を実施した。この結果は表３中に示さ
れるように、はんだ接合の場合には、３００サイクルで
はんだ部にクラックが確認され、強度劣化を生じたが、
本発明の超音波接合部には５００サイクルでもこのよう
な現象は確認されなかった。Table 3 shows the results of the thermal cycle test of the joint portion between the joint end portion 16-1 of the external electrode terminal 16 and the terminal block 14 joined by the ultrasonic bonding of the present invention, in the case of the conventional solder joint. It is shown for comparison. That is,
Width 2.5 mm, thickness 0.8 mm as the joining end 16-1
The Cu plate is bonded by ultrasonic bonding, and a Cu plate having the same size is bonded as a comparative product by using a Pb-based solder.
The thermal cycle test was conducted. As a result, as shown in Table 3, in the case of solder joining, cracks were confirmed in the solder portion after 300 cycles, and strength deterioration occurred.
No such phenomenon was observed in the ultrasonic joint of the present invention even after 500 cycles.
【００１９】さらに、本発明においては、超音波接合部
の省スペース効果を確認するため、上記幅２．５ｍｍ、
厚さ０．８ｍｍのＣｕ板と同等の電流容量、例えば１５
０Ａの電流を流すために、従来行われていた５００μｍ
の径のアルミワイヤ８本により、外部電極端子１６と端
子台１４との接続を行った。そして両者の接合に必要な
面積を比較したところ、本発明の場合はワイヤボンディ
ングの場合に比較して約１１％の省スペースとなること
が確認された。Further, in the present invention, in order to confirm the space saving effect of the ultrasonic bonding portion, the width of 2.5 mm,
Current capacity equivalent to a 0.8 mm thick Cu plate, eg 15
500 μm, which was conventionally used to pass 0 A current
The external electrode terminal 16 and the terminal block 14 were connected with eight aluminum wires having the same diameter. When the areas required for joining the two were compared, it was confirmed that the present invention saves about 11% of space as compared with the case of wire bonding.
【００２０】以上本発明の実施形態について説明した
が、本発明は上記の実施形態に限定されるものではな
く、本発明の請求項に示される技術思想の範囲内で種々
の変形が容易に考えられる。例えば、外部電極端子１６
は全体が板状である必要はなく、少なくも端子台１４に
接触する接合端部１６−１が板状であればよい。また、
その材料や硬度も上記実施形態に限定されるものではな
い。Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be easily considered within the scope of the technical idea shown in the claims of the present invention. To be For example, the external electrode terminal 16
Does not have to be plate-shaped as a whole, and at least the joint end 16-1 that contacts the terminal block 14 may be plate-shaped. Also,
The material and hardness are not limited to those in the above embodiment.
【００２１】さらに、本発明の超音波接合方法は図示の
ような大電力トランジスタに限られず、電流容量の大き
なサイリスタあるいはダイオード等、いわゆる大電力半
導体装置における導体の接合に適用することができる。Further, the ultrasonic bonding method of the present invention is not limited to the high power transistor as shown, but can be applied to the bonding of conductors in so-called high power semiconductor devices such as thyristors or diodes having a large current capacity.
【００２２】[0022]
【発明の効果】本発明によれば、高い信頼性と省スペー
スを併せ持つ半導体装置およびその製造方法を得ること
ができ、特に、本発明は電気自動車用の大電力半導体装
置のような大電流を要し、厳しい自然環境下で使用され
る装置に適用した場合、顕著な効果が得られる。According to the present invention, it is possible to obtain a semiconductor device having high reliability and space saving, and a method for manufacturing the same, and in particular, the present invention can generate a large current such as a large power semiconductor device for an electric vehicle. In short, when applied to a device used in a severe natural environment, a remarkable effect can be obtained.
【図１】本発明の一実施形態である大電力半導体装置の
一部切欠斜視図である。FIG. 1 is a partially cutaway perspective view of a high power semiconductor device according to an embodiment of the present invention.
【図２】図１の装置の要部を拡大して示す斜視図であ
る。FIG. 2 is a perspective view showing an enlarged main part of the apparatus of FIG.
【図３】図１に示した半導体装置内部の素子配置を示す
平面図である。3 is a plan view showing an element arrangement inside the semiconductor device shown in FIG. 1. FIG.
１１ ＤＢＣ基板 １２ 半導体チップ １３ 樹脂ケース １４ 端子台 １５ ボンデイングワイヤ １６ 外部電極端子 １６−１ 接合端部 １６−２ 本体部 １６−３ 接続端部 11 DBC substrate 12 semiconductor chips 13 resin case 14 terminal block 15 Bonding wire 16 external electrode terminals 16-1 Joint end 16-2 Main body 16-3 Connection end
フロントページの続き (72)発明者 木本 晶紀 兵庫県姫路市余部区上余部50番地 株式 会社東芝 姫路半導体工場内 (56)参考文献 特開 平６−216505（ＪＰ，Ａ) 特開 平４−286889（ＪＰ，Ａ) 特開 昭61−183936（ＪＰ，Ａ) 特開 平４−212277（ＪＰ，Ａ) 特開 平６−268027（ＪＰ，Ａ) 特開 平８−191130（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 H01L 23/12 H01L 23/48 - 23/50 H01L 25/07,25/18 Front page continuation (72) Inventor Akiki Kimoto 50, Kamimayu, Yobu-ku, Himeji-shi, Hyogo Inside Himeji Semiconductor Factory, Toshiba Corp. (56) Reference JP-A-6-216505 (JP, A) JP-A-4-216 286889 (JP, A) JP 61-183936 (JP, A) JP 4-212277 (JP, A) JP 6-268027 (JP, A) JP 8-191130 (JP, A) (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/60 H01L 23/12 H01L 23 / 48-23 / 50 H01L 25 / 07,25 / 18
Claims (4)
ップと、この半導体チップの電極端子が電気的に接続さ
れるように前記セラミック基板上に形成された電極端子
台と、この電極端子台に超音波接合によりその一端が接
続され、少なくともこの一端部が、ピッカース硬度が 80
以下の銅又は銅合金からなる板状に形成された外部電極
端子と、この外部電極端子の一部、前記セラミック基
板、このセラミック基板上に固着された半導体チップお
よび前記電極端子台を収納するパッケージとを備えたこ
とを特徴とする半導体装置。 1. A semiconductor chip fixed on a ceramic substrate.
And the electrode terminals of this semiconductor chip are electrically connected.
Terminal formed on the ceramic substrate so that
One end of the base and this electrode terminal base are connected by ultrasonic bonding.
At least one end has a Pickers hardness of 80.
External electrode formed in a plate shape made of the following copper or copper alloy
Terminal and a part of this external electrode terminal, the ceramic substrate
Board, semiconductor chips and semiconductor chips fixed on this ceramic substrate
And a package that houses the electrode terminal block.
And a semiconductor device.
であり、また、前記電極端子台は前記セラミック基板上
に形成された銅回路の一部であることを特徴とする請求
項 1 記載の半導体装置。 2. The semiconductor chip is a power semiconductor chip.
And the electrode terminal block is on the ceramic substrate.
Claim that is a part of the copper circuit formed in
The semiconductor device according to item 1 .
る工程と、この半導体チップの電極端子を前記セラミッ
ク基板上に固着された電極端子台に電気的に接続する工
程と、この電極端子台に少なくともその一端が、ピッカ
ース硬度 80 以下の銅又は銅合金からなる板状の外部電極
端子を超音波接合により接続する工程と、この外部電極
端子の一部、前記セラミック基板、このセラミック基板
上に配置された半導体チップおよび電極端子台をパッケ
ージ内に収納する工程とを備えたことを特徴とする半導
体装置の製造方法。 3. A semiconductor chip is fixed on a ceramic substrate.
And the electrode terminal of this semiconductor chip
The process of electrically connecting to the electrode terminal block fixed on the substrate.
And at least one end of this electrode terminal block
Plate-shaped external electrode made of copper or copper alloy with a hardness of 80 or less
The process of connecting the terminals by ultrasonic bonding and this external electrode
Part of the terminal, the ceramic substrate, this ceramic substrate
Package the semiconductor chip and electrode terminal block
Semi-conductor
Body device manufacturing method.
あり、前記電極端子台は前記セラミック基板上に形成さ
れた銅回路の一部であることを特徴とする請求項３記載
の半導体装置の製造方法。 4. The semiconductor chip is a power semiconductor chip.
Yes, the electrode terminal block is formed on the ceramic substrate.
4. A part of a copper circuit that is formed by using
Of manufacturing a semiconductor device of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36075897A JP3524360B2 (en) | 1997-12-26 | 1997-12-26 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36075897A JP3524360B2 (en) | 1997-12-26 | 1997-12-26 | Semiconductor device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11195725A JPH11195725A (en) | 1999-07-21 |
| JP3524360B2 true JP3524360B2 (en) | 2004-05-10 |
Family
ID=18470797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36075897A Expired - Lifetime JP3524360B2 (en) | 1997-12-26 | 1997-12-26 | Semiconductor device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3524360B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8395262B2 (en) | 2010-02-01 | 2013-03-12 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278913A (en) | 2005-03-30 | 2006-10-12 | Toyota Motor Corp | Circuit device and manufacturing method therefor |
-
1997
- 1997-12-26 JP JP36075897A patent/JP3524360B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8395262B2 (en) | 2010-02-01 | 2013-03-12 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8860220B2 (en) | 2010-02-01 | 2014-10-14 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11195725A (en) | 1999-07-21 |
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