JP3520606B2 - Peltier module - Google Patents

Peltier module

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Publication number
JP3520606B2
JP3520606B2 JP12869195A JP12869195A JP3520606B2 JP 3520606 B2 JP3520606 B2 JP 3520606B2 JP 12869195 A JP12869195 A JP 12869195A JP 12869195 A JP12869195 A JP 12869195A JP 3520606 B2 JP3520606 B2 JP 3520606B2
Authority
JP
Japan
Prior art keywords
peltier
substrate
thermal stress
peltier element
heat exchange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP12869195A
Other languages
Japanese (ja)
Other versions
JPH08321635A (en
Inventor
慎也 村瀬
展輝 前川
勝義 下田
照明 小松
浩明 岡田
宏之 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP12869195A priority Critical patent/JP3520606B2/en
Publication of JPH08321635A publication Critical patent/JPH08321635A/en
Application granted granted Critical
Publication of JP3520606B2 publication Critical patent/JP3520606B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Cooling Or The Like Of Electrical Apparatus (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は複数のペルチェ素子から
なるペルチェモジュールに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Peltier module composed of a plurality of Peltier devices.

【0002】[0002]

【従来の技術】一対の基板間に複数個の熱電変換素子で
あるペルチェ素子を並置配設するとともに各基板に設け
た接合電極にペルチェ素子を接合することで各ペルチェ
素子を電気的に直列に且つ熱的に並列になるように接続
配置したペルチェモジュールでは、一方の基板が加熱
側、他方の基板が冷却側として作用するが、このために
両基板は熱膨張及び熱収縮を行うことになり、この熱膨
張及び熱収縮が原因で基板とペルチェ素子との接合部に
接合面と平行な方向の熱応力が加わる。各基板には熱交
換部材が密着固定されるが、この熱交換部材と基板との
熱膨張係数の差が上記熱応力を更に大きくする。このよ
うな熱応力は、ペルチェモジュールとしての性能を低下
させ、接合部の信頼性も低下させる。時には接合部の疲
労破壊やペルチェ素子の破壊も招く。
2. Description of the Related Art A plurality of Peltier elements, which are thermoelectric conversion elements, are arranged side by side between a pair of substrates, and the Peltier elements are electrically connected in series by joining the Peltier elements to the bonding electrodes provided on each substrate. In addition, in the Peltier module that is connected and arranged so as to be thermally parallel, one substrate acts as a heating side and the other substrate acts as a cooling side, which results in thermal expansion and contraction of both substrates. Due to the thermal expansion and thermal contraction, thermal stress is applied to the joint between the substrate and the Peltier element in the direction parallel to the joint surface. A heat exchange member is tightly fixed to each substrate, and the difference in thermal expansion coefficient between the heat exchange member and the substrate further increases the thermal stress. Such thermal stress lowers the performance of the Peltier module and also lowers the reliability of the joint. Occasionally, fatigue failure of the joint and destruction of the Peltier element are also caused.

【0003】このために、実開昭62−51770号公
報に示されたものでは、熱膨張側となる基板に密着固定
させた熱交換部材に変形によって熱応力を吸収する熱応
力吸収部を設けることがなされている。
For this reason, in the one disclosed in Japanese Utility Model Laid-Open No. 62-51770, a heat exchange member, which is closely fixed to the substrate on the thermal expansion side, is provided with a thermal stress absorbing portion for absorbing thermal stress by deformation. Things have been done.

【0004】[0004]

【発明が解決しようとする課題】しかし、上記構成にお
ける熱応力吸収部は、熱交換部材における基板との接合
領域の外側に設けられており、ペルチェ素子と基板との
間に働く熱応力の低減については殆ど効果のないもので
あった。本発明はこのような点に鑑み為されたものであ
り、その目的とするところは熱応力に対するペルチェ素
子と基板との接合部の信頼性をより向上させたペルチェ
モジュールを提供するにある。
However, the thermal stress absorbing portion in the above structure is provided outside the joining region of the heat exchange member with the substrate, and reduces the thermal stress acting between the Peltier element and the substrate. Was almost ineffective. The present invention has been made in view of the above points, and an object of the present invention is to provide a Peltier module in which the reliability of the joint between the Peltier element and the substrate against thermal stress is further improved.

【0005】[0005]

【課題を解決するための手段】しかして本発明は、一対
の基板間に複数個のペルチェ素子を並置配設するととも
に各基板に設けた接合電極にペルチェ素子が接合されて
いるペルチェモジュールにおいて、接合電極が設けられ
ている基板は、ペルチェ素子実装部のペルチェ素子接合
部間に、熱応力に応じて変形する熱応力吸収部を備えて
いることに主たる特徴を有している。
SUMMARY OF THE INVENTION However, the present invention provides a Peltier module in which a plurality of Peltier elements are arranged side by side between a pair of substrates, and the Peltier elements are joined to the joining electrodes provided on the respective substrates. The substrate on which the bonding electrodes are provided is characterized mainly in that a thermal stress absorbing portion that deforms according to thermal stress is provided between the Peltier element bonding portions of the Peltier device mounting portion.

【0006】ここにおける熱応力吸収部はペルチェ素子
接合部の間に形成する突条を好適に用いることができ、
この突条がペルチェ素子の配列位置決め部材を兼ねてい
るならばより好ましいものとなる。また本発明は、熱交
換部材が夫々の外面に固着される一対の基板間に複数個
のペルチェ素子を並置配設するとともに各基板に設けた
接合電極にペルチェ素子が接合されているペルチェモジ
ュールにおいて、基板はペルチェ素子実装部領域の外周
の熱交換部材取付領域において熱交換部材が密着固定さ
れており、基板のペルチェ素子実装領域における外面と
熱交換部材との間には微小隙間が設けられていることに
他の特徴を有している。
As the thermal stress absorbing portion here, a protrusion formed between the Peltier element joint portions can be preferably used.
It is more preferable if this projection also serves as an array positioning member for the Peltier elements. Further, the present invention provides a Peltier module in which a plurality of Peltier elements are arranged side by side between a pair of substrates whose heat exchange members are fixed to the respective outer surfaces, and the Peltier elements are joined to the joining electrodes provided on each substrate. The heat exchange member is closely fixed in the heat exchange member mounting area on the outer periphery of the Peltier element mounting area of the substrate, and a minute gap is provided between the outer surface of the Peltier element mounting area of the substrate and the heat exchange member. It has other characteristics in that

【0007】[0007]

【作用】本発明によれば、熱応力に応じて変形する熱応
力吸収部を基板におけるペルチェ素子実装部のペルチェ
素子接合部間に設けているために、熱応力吸収部が基板
とペルチェ素子との間に働く熱応力を確実に吸収する。
この時、基板に設ける熱応力吸収部としてペルチェ素子
接合部の間に形成する突条を用いた場合、熱応力吸収部
を簡便に形成することができ、この突条がペルチェ素子
の配列位置決め部材を兼ねているならば、組立性の向上
を図ることができる。
According to the present invention, since the thermal stress absorbing portion that deforms in response to thermal stress is provided between the Peltier element joining portions of the Peltier element mounting portion of the substrate, the thermal stress absorbing portion is formed between the substrate and the Peltier element. Reliably absorbs the thermal stress that acts during.
At this time, if a ridge formed between the Peltier element joints is used as the thermal stress absorber provided on the substrate, the thermal stress absorber can be easily formed. If it also serves, it is possible to improve the assemblability.

【0008】また基板がペルチェ素子実装部領域の外周
の熱交換部材取付領域において熱交換部材が密着固定さ
れ、基板のペルチェ素子実装領域における外面と熱交換
部材との間には微小隙間が設けられているものでは、こ
の隙間が基板の熱膨張及び熱収縮によるところの湾曲を
許すために基板とペルチェ素子との接合部にかかる熱
応力を軽減することができ、したがって熱応力による問
題を実用上排除することができる。
Further, the heat exchange member is closely attached and fixed in the heat exchange member mounting region on the outer periphery of the Peltier device mounting region of the substrate, and a minute gap is provided between the outer surface of the Peltier device mounting region of the substrate and the heat exchange member. However, in order to allow the gap to bend due to the thermal expansion and contraction of the substrate, the heat applied to the joint between the substrate and the Peltier element is increased.
The stress can be reduced and thus the problems due to thermal stress can be practically eliminated.

【0009】[0009]

【実施例】以下本発明を図示の実施例に基づいて詳述す
ると、ここで示すペルチェモジュールは、図1に示すよ
うに、複数のペルチェ素子1,一対の基板2,2、筒状
のシール枠3、基板2の四隅において一対の基板2,2
同士を連結している筒状の支柱4で構成されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the illustrated embodiments. As shown in FIG. 1, the Peltier module shown here includes a plurality of Peltier elements 1, a pair of substrates 2, 2 and a tubular seal. The frame 3 and the pair of substrates 2 and 2 at the four corners of the substrate 2
It is composed of a cylindrical support column 4 connecting the two.

【0010】各ペルチェ素子1はP型の素子とN型の素
子とが基板2,2の対向面に形成された接合電極10に
よってπ型に順次接続されることで、電気的に直列に且
つ熱的に並列に接続されている。また、各基板2におけ
る接合電極10とペルチェ素子1とで構成される上記直
列回路の両端は、各基板2の対向面に形成されていると
ともに外部との接続用の端子部12を備えているリード
電極11に接続されている。
In each Peltier element 1, a P-type element and an N-type element are sequentially connected in a π-type by a junction electrode 10 formed on the opposing surfaces of the substrates 2 and 2, so that they are electrically connected in series. Thermally connected in parallel. Further, both ends of the series circuit formed of the bonding electrode 10 and the Peltier element 1 on each substrate 2 are provided on the facing surfaces of each substrate 2 and provided with terminal portions 12 for connection to the outside. It is connected to the lead electrode 11.

【0011】図5に一方の基板2を、図6に他方の基板
2を示す。両基板2においては、ペルチェ素子1の直列
接続のために接合電極10の位置がずらされている。ま
た、図から明らかなように、各基板2に設けられたリー
ド電極11は、接合電極10の配置部分、つまり複数の
ペルチェ素子1の配置部分を囲む閉ループを構成する環
状のものとして形成されている。
FIG. 5 shows one substrate 2 and FIG. 6 shows the other substrate 2. The positions of the bonding electrodes 10 on the two substrates 2 are displaced due to the series connection of the Peltier devices 1. Further, as is apparent from the drawing, the lead electrode 11 provided on each substrate 2 is formed as an annular one that forms a closed loop surrounding the arrangement portion of the bonding electrode 10, that is, the arrangement portion of the plurality of Peltier elements 1. There is.

【0012】少なくとも表面が電気絶縁性を有するもの
となっている上記基板2は、アルミナまたは窒化アルミ
のような単体、あるいはアルミの表面にアルマイト処理
をしたもの、アルミの表面にアルミナまたは酸化ケイ素
層を形成したもの、銅の表面に薄い接着絶縁層を形成し
たものなどの複合材で形成されており、接合電極10や
リード電極11、端子部12などはたとえば基板2表面
への溶射工法で形成されている。
The above-mentioned substrate 2 having at least a surface having electrical insulation property is a simple substance such as alumina or aluminum nitride, or aluminized surface of aluminum, or an alumina or silicon oxide layer on the surface of aluminum. Is formed of a composite material such as a copper foil or a thin adhesive insulating layer formed on the surface of copper, and the bonding electrode 10, the lead electrode 11, the terminal portion 12 and the like are formed by, for example, a thermal spraying method on the surface of the substrate 2. Has been done.

【0013】前記シール枠3は、ペルチェ素子1の配置
部分を密封するためのもので、たとえばABS樹脂、非
親水性処理が施された紙などの絶縁材で筒状に形成され
ており、両端開口縁が各基板2の前記リード電極11の
閉ループ部分に接合されることで、基板2,2と併せ
て、全ペルチェ素子1の配置空間を防湿のために密閉し
ている。ここで、シール枠3とリード電極11との接合
は、シール枠3におけるリード電極11との接合に供す
る部分に、予め銅、ニッケル、錫等の金属膜をメッキや
溶射などにより形成しておき、リード電極11にはろう
付けや半田付けで接合している。これは、長期的に見れ
ば水分の侵入を許しやすい接着剤の使用を避けるためで
ある。なお、ここにおけるシール枠3は、基板2,2の
対向方向における荷重を担うものともなっている。
The seal frame 3 is for sealing the portion where the Peltier element 1 is arranged, and is formed in a cylindrical shape with an insulating material such as ABS resin or non-hydrophilic treated paper. The opening edge is joined to the closed loop portion of the lead electrode 11 of each substrate 2, so that the space for arranging all the Peltier devices 1 together with the substrates 2 and 2 is sealed to prevent moisture. Here, the seal frame 3 and the lead electrode 11 are bonded to each other by previously forming a metal film of copper, nickel, tin or the like on the portion of the seal frame 3 to be bonded to the lead electrode 11 by plating or thermal spraying. The lead electrodes 11 are joined by brazing or soldering. This is to avoid the use of an adhesive that easily allows moisture to enter in the long term. The seal frame 3 here also bears a load in the direction in which the substrates 2 and 2 face each other.

【0014】筒状の各支柱4はたとえば熱伝導度の低い
ファイバープラスチックなどで形成されているとともに
その両端に銅、ニッケル、錫等の金属膜40がメッキや
溶射などで形成されたもので、基板2側に溶射等で設け
た金属部13にシール枠3の場合と同様にろう付けや半
田付けで接合されている。なお、金属部13はリード電
極11に対して絶縁されている。
Each of the cylindrical columns 4 is formed of, for example, fiber plastic having a low thermal conductivity, and metal films 40 of copper, nickel, tin or the like are formed on both ends thereof by plating or thermal spraying. Similar to the case of the seal frame 3, the metal portion 13 provided on the substrate 2 side by thermal spraying or the like is joined by brazing or soldering. The metal portion 13 is insulated from the lead electrode 11.

【0015】そして、上記ペルチェ素子1は、接合電極
10に直接接合されるのではなく、熱応力緩和のための
緩和部材15を介して接合電極10に接合されている。
緩和部材15は、電気伝導度及び熱伝導度が高く且つペ
ルチェ素子1とヤング率がほぼ等しい材質、たとえば焼
鈍した銅からなるもので、ペルチェ素子1の両面に無害
の金属を予めメッキしておき、ニッケル、金、半田等の
メッキが施された緩和部材15をペルチェ素子1の両面
に半田接合することで、ペルチェ素子1を一対の緩和部
材15,15でサンドイッチしておき、このサンドイッ
チ構造となったペルチェ素子1を基板1の接合電極10
に半田接合もしくは金属ペーストにより接合してある。
緩和部材15として銅を用いているのは、電気伝導度及
び熱伝導度が高く且つ安価な材料であるためであり、ま
た焼鈍してあるのは、ペルチェ素子1に比して高い銅の
ヤング率をペルチェ素子1のヤング率とほぼ同じ値まで
下げるためである。
The Peltier element 1 is not directly bonded to the bonding electrode 10, but is bonded to the bonding electrode 10 via a relaxation member 15 for relaxing thermal stress.
The relaxation member 15 is made of a material having a high electric conductivity and a high thermal conductivity and a Young's modulus almost equal to that of the Peltier element 1, for example, annealed copper, and both surfaces of the Peltier element 1 are preliminarily plated with a harmless metal. The peltier element 1 is sandwiched between the pair of easing members 15 and 15 by soldering the easing member 15 plated with nickel, gold, solder or the like on both surfaces of the Peltier element 1 to form a sandwich structure. The Peltier device 1 which has become the bonding electrode 10 of the substrate 1
Are joined by soldering or metal paste.
Copper is used as the relaxing member 15 because it is a material having high electric conductivity and thermal conductivity and is inexpensive, and the annealed member 15 is annealed and has a higher copper Young's temperature than the Peltier element 1. This is to reduce the modulus to a value that is substantially the same as the Young's modulus of the Peltier device 1.

【0016】このようにペルチェ素子1と基板2との間
に緩和部材15を介在させた場合、ペルチェ素子1の抵
抗値を小さく保ちつつ実質的な高さを大きくすることが
でき、そしてペルチェ素子1と緩和部材15との一体部
材に熱応力が加わることになるためにペルチェ素子1と
緩和部材15との接合部にかかる熱応力を軽減すること
ができるほか、加熱側となる基板2と冷却側となる基板
2との間の距離をかせぐことができるため、熱輻射によ
るロスを低減して性能向上を図ることができるものとも
なる。
In this way, when the relaxation member 15 is interposed between the Peltier element 1 and the substrate 2, the substantial height can be increased while keeping the resistance value of the Peltier element 1 small, and 1 and the relaxation member 15 are applied with a thermal stress, the thermal stress applied to the joint between the Peltier element 1 and the relaxation member 15 can be reduced, and the substrate 2 on the heating side and the cooling can be reduced. Since the distance from the substrate 2 on the side can be increased, the loss due to heat radiation can be reduced and the performance can be improved.

【0017】また各基板2は、接合電極10,10間の
部分及び接合電極10とリード電極11との間の部分
に、互いの対向面側に突出する複数本の突条からなる熱
応力吸収部20を備えている。各基板2,2の外面側に
は、上記筒状の支柱4を貫通するボルトによって、熱交
換部材が固着される。上記熱応力吸収部20は、基板2
が図7に示すようにアルミ21の表面にアルミナ層22
を設けたものである場合、アルミの薄板21(たとえば
厚み0.1mm)に金型等で絞りを入れることで形成さ
れ、アルミナ層22や電極10,11は熱応力吸収部2
0の形成後に形成される。
Further, each substrate 2 has a plurality of ridges projecting toward the mutually opposing surfaces at the portion between the bonding electrodes 10 and 10 and the portion between the bonding electrode 10 and the lead electrode 11 to absorb thermal stress. The unit 20 is provided. A heat exchange member is fixed to the outer surface side of each of the substrates 2 and 2 by a bolt penetrating the cylindrical support 4. The thermal stress absorbing section 20 is the substrate 2
As shown in FIG. 7, the alumina layer 22 is formed on the surface of the aluminum 21.
In the case where the heat stress absorbing portion 2 is provided, the aluminum layer 22 and the electrodes 10 and 11 are formed by drawing the aluminum thin plate 21 (thickness 0.1 mm, for example) with a die or the like.
It is formed after the formation of 0.

【0018】この熱応力吸収部20は、基板2の面に沿
った方向の熱による伸縮の自由度を高めるものであり、
基板2とペルチェ素子1(緩和部材15)との接合部に
かかる熱応力そのものを軽減する。しかも、一対の基板
2,2の両方に、熱応力吸収部20が接合電極10間を
通るように多数設けられており、基板2の熱膨張及び熱
収縮は、基板2のペルチェ素子1の実装領域内におい
て、これら熱応力吸収部20で夫々吸収してしまうもの
であり、ペルチェ素子1と基板2との各接合部にかかる
熱応力はきわめて微小であって、熱応力による問題を招
くことがないものである。加えるに、緩和部材15の存
在が前述のようにペルチェ素子1自体にかかる応力を軽
減することもあって、ペルチェ素子1が熱応力によって
破損することはない。
The thermal stress absorbing portion 20 increases the degree of freedom of expansion and contraction due to heat in the direction along the surface of the substrate 2.
The thermal stress itself applied to the joint between the substrate 2 and the Peltier element 1 (relaxation member 15) is reduced. Moreover, a large number of thermal stress absorbers 20 are provided on both of the pair of substrates 2 and 2 so as to pass between the bonding electrodes 10, and thermal expansion and contraction of the substrate 2 are caused by mounting the Peltier device 1 on the substrate 2. In the region, these thermal stress absorbing parts 20 respectively absorb, and the thermal stress applied to each joint between the Peltier element 1 and the substrate 2 is extremely small, which may cause a problem due to the thermal stress. There is no such thing. In addition, the presence of the relaxation member 15 may reduce the stress applied to the Peltier element 1 itself as described above, so that the Peltier element 1 is not damaged by thermal stress.

【0019】さらに、接合電極10とリード電極11と
の間の部分に設けた熱応力吸収部は、支柱4部分を利用
して基板2に熱交換部材を取り付ける際のねじ締めトル
ク圧が上記接合部に影響することを軽減することにもな
る。このように基板2に熱膨張及び熱収縮によって変形
する部分を設けて接合部にかかる応力の軽減を図る関係
上、基板2としては従来より用いられてものに比して、
厚みの薄いシート状ものが好ましく、この点は熱電性
能の向上にも好ましい。
Further, the thermal stress absorbing portion provided in the portion between the joining electrode 10 and the lead electrode 11 has the same screw tightening torque pressure as that when the heat exchanging member is attached to the substrate 2 by utilizing the supporting column 4. It also reduces the influence on the department. Since the substrate 2 is provided with a portion that is deformed by thermal expansion and thermal contraction in order to reduce the stress applied to the joint portion, as compared with the substrate 2 that has been conventionally used,
Thin sheet is preferably thick, preferably to the improvement of this point thermoelectric performance.

【0020】また図7に示すように、突条として形成さ
れた熱応力吸収部20に接合電極10の一部が乗り上げ
るようにしておき、この乗り上げ部分でペルチェ素子1
(と緩和部材15のブロック)の位置を規制するように
して、熱応力吸収部20がペルチェ素子1の配列位置決
め部材を兼ねるようにしておけば、組立時のばらつきを
軽減してペルチェ素子1間の絶縁ピッチを一定に保つこ
とができ、組立性の向上及び電気的特性の向上に寄与す
ることになる。接合電極10をこのように形成するにあ
たっては、ソルダーレジスト8などの絶縁材を利用する
とよい。溶射工法による接合電極10やリード電極11
などの形成が容易且つ精確なものとすることができる。
つまり、溶射の際の銅などの粉末が電極形成部以外に付
着しても容易に除去することができるものであり、電極
間の絶縁を確実に行うことができる。
Further, as shown in FIG. 7, a part of the bonding electrode 10 is mounted on the thermal stress absorbing portion 20 formed as a ridge, and the Peltier element 1 is mounted on this mounting portion.
By restricting the position of (and the block of the relaxation member 15) so that the thermal stress absorbing portion 20 also serves as an array positioning member for the Peltier elements 1, variation during assembly is reduced and the Peltier elements 1 are separated from each other. The insulating pitch can be kept constant, which contributes to the improvement of the assemblability and the electrical characteristics. In forming the bonding electrode 10 in this way, an insulating material such as the solder resist 8 may be used. Bonding electrode 10 and lead electrode 11 by the thermal spraying method
Can be easily and accurately formed.
That is, even if powder of copper or the like during thermal spraying adheres to a portion other than the electrode forming portion, it can be easily removed, and insulation between the electrodes can be reliably performed.

【0021】図8に他の実施例を示す。ここでは基板2
におけるペルチェ素子1の実装領域とその外周のシール
枠3の接合部との間に、実装領域の方を低くする段差部
23を設けている。この場合、基板2の外面に支柱4部
分を通過するボルトを用いて上記実装領域の外周部を熱
交換用フィンのような熱交換部材9を固定する時、熱交
換部材9と基板2における上記実装領域との間に微小な
隙間を形成することができる。そしてこの隙間の存在
は、基板2が熱膨張及び熱収縮で湾曲することを許すも
のであり、これに伴って基板2とペルチェ素子1との接
合部に熱応力が作用しにくくなるために、熱応力による
問題を避けることができる。また、このような微小な隙
間を形成することは、上記ボルトの締付トルク圧が実装
領域にかかることをほぼ完全に避けることができるもの
であり、締付トルク圧に基づく基板2と直交する方向の
ストレスが基板2とペルチェ素子1との接合部にかかる
ことを避けることができる。なお、段差部23による上
記隙間の高さHは熱的性能の低下を抑えるために、1μ
m〜100μmが適当である。またこの隙間には、グリ
ス等を充填することで、基板2と熱交換部材9との間の
熱伝達特性を良くしておく。
FIG. 8 shows another embodiment. Here substrate 2
Between the mounting region of the Peltier device 1 and the joint portion of the seal frame 3 on the outer periphery of the Peltier device 1, a step portion 23 is provided to lower the mounting region. In this case, when a heat exchange member 9 such as a heat exchange fin is fixed to the outer peripheral portion of the mounting area on the outer surface of the substrate 2 by using bolts passing through the support columns 4, the heat exchange member 9 and the substrate 2 are not covered. A minute gap can be formed between the mounting area and the mounting area. The existence of this gap allows the substrate 2 to bend due to thermal expansion and thermal contraction, and accordingly, thermal stress is less likely to act on the joint between the substrate 2 and the Peltier element 1, Problems due to thermal stress can be avoided. Further, forming such a minute gap can almost completely prevent the tightening torque pressure of the bolt from being applied to the mounting area, and is orthogonal to the substrate 2 based on the tightening torque pressure. It is possible to avoid applying a directional stress to the joint between the substrate 2 and the Peltier element 1. The height H of the gap due to the stepped portion 23 is set to 1 μm in order to suppress deterioration of thermal performance.
m to 100 μm is suitable. In addition, the gap is filled with grease or the like to improve the heat transfer characteristic between the substrate 2 and the heat exchange member 9.

【0022】図9に示すように、段差部23に断面U字
形の屈曲部を併せて形成したならば、この段差部23が
基板2の熱膨張及び熱収縮をその屈曲部の変形で吸収す
るために、基板2の上記湾曲量を抑えることができる。
したがって、上記接合部にかかる熱応力を更に小さくす
ることができる上に、上記隙間の高さHをより小さくし
ても基板2におけるペルチェ素子1の実装領域が熱交換
部材9に湾曲で当たってしまうことがなくなるものであ
り、したがって基板2と熱交換部材9との間の熱伝達特
性を向上させることができる。
As shown in FIG. 9, if a stepped portion 23 is also formed with a bent portion having a U-shaped cross section, the stepped portion 23 absorbs thermal expansion and contraction of the substrate 2 by deformation of the bent portion. Therefore, the amount of bending of the substrate 2 can be suppressed.
Therefore, the thermal stress applied to the joint portion can be further reduced, and even if the height H of the gap is reduced, the mounting region of the Peltier element 1 on the substrate 2 hits the heat exchange member 9 in a curved manner. Therefore, the heat transfer characteristics between the substrate 2 and the heat exchange member 9 can be improved.

【0023】なお、上記隙間は、熱交換部材9側に微小
な凹部を形成することで得てもよい。また熱応力吸収部
20と上記隙間とを併用してもよい。さらに、熱応力吸
収部20として突条(凹溝)で形成したものを示した
が、基板2に設ける孔で熱応力吸収部20を構成しても
よい。熱応力吸収部20が連続的ではなく、断続的に設
けられたものであってもよいものである。
The gap may be obtained by forming a minute recess on the heat exchange member 9 side. Further, the thermal stress absorbing portion 20 and the gap may be used together. Further, although the thermal stress absorbing portion 20 formed by the ridge (concave groove) is shown, the thermal stress absorbing portion 20 may be formed by a hole provided in the substrate 2. The thermal stress absorbing portion 20 may be provided not intermittently but intermittently.

【0024】[0024]

【発明の効果】以上のように本発明においては、熱応力
に応じて変形する熱応力吸収部を基板におけるペルチェ
素子実装部のペルチェ素子接合部間に設けているため
に、熱応力吸収部が基板とペルチェ素子との間に働く熱
応力を確実に吸収するものであり、このために、熱応力
に対するペルチェ素子と基板との接合部の信頼性を高め
ることができるものである。
As described above, in the present invention, since the thermal stress absorbing portion that deforms according to the thermal stress is provided between the Peltier element bonding portions of the Peltier element mounting portion on the substrate, the thermal stress absorbing portion is It reliably absorbs the thermal stress acting between the substrate and the Peltier element, and therefore the reliability of the joint between the Peltier element and the substrate against the thermal stress can be improved.

【0025】この時、基板に設ける熱応力吸収部として
ペルチェ素子接合部の間に形成する突条を用いた場合、
熱応力吸収部を簡便に形成することができる。また突条
がペルチェ素子の配列位置決め部材を兼ねているなら
ば、組立性の向上も図ることができる。また基板がペル
チェ素子実装部領域の外周の熱交換部材取付領域におい
て熱交換部材が密着固定され、基板のペルチェ素子実装
領域における外面と熱交換部材との間には微小隙間が設
けられているものでは、この隙間が基板の熱膨張及び熱
収縮によるところの湾曲を許すために基板とペルチェ
素子との接合部にかかる熱応力を軽減することができ
したがって熱応力による問題を実用上排除することがで
きて、接合部の信頼性を高めることができる。しかも熱
交換部材の取り付けのための力がペルチェ素子と基板と
の接合部に作用することで生ずるストレスを軽減するこ
とができるために、この点においても接合部の信頼性を
高めることができる。
At this time, when a ridge formed between the Peltier element joints is used as the thermal stress absorber provided on the substrate,
The thermal stress absorption portion can be easily formed. In addition, if the protrusion also serves as an array positioning member for the Peltier element, the assembling property can be improved. Further, the heat exchange member is closely adhered and fixed in the heat exchange member mounting region on the outer periphery of the Peltier device mounting region of the substrate, and a minute gap is provided between the outer surface of the Peltier device mounting region of the substrate and the heat exchange member. Then, since the gap allows the curvature due to the thermal expansion and the thermal contraction of the substrate, the thermal stress applied to the joint portion between the substrate and the Peltier element can be reduced ,
Therefore, the problem due to thermal stress can be practically eliminated, and the reliability of the joint can be improved. In addition, since the stress generated by the force for attaching the heat exchange member acting on the joint between the Peltier element and the substrate can be reduced, the reliability of the joint can be improved also in this respect.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明一実施例の破断斜視図である。FIG. 1 is a cutaway perspective view of an embodiment of the present invention.

【図2】同上の拡大断面図である。FIG. 2 is an enlarged sectional view of the above.

【図3】同上の斜視図である。FIG. 3 is a perspective view of the above.

【図4】同上の断面図である。FIG. 4 is a sectional view of the same.

【図5】同上の一方の基板を示す破断正面図である。FIG. 5 is a cutaway front view showing the one substrate of the above.

【図6】同上の他方の基板を示す破断正面図である。FIG. 6 is a cutaway front view showing the other substrate of the above.

【図7】同上の拡大断面図である。FIG. 7 is an enlarged sectional view of the above.

【図8】同上の他例の断面図である。FIG. 8 is a sectional view of another example of the above.

【図9】同上のさらに他例の断面図である。FIG. 9 is a sectional view of still another example of the above.

【符号の説明】[Explanation of symbols]

1 ペルチェ素子 2 基板 20 熱応力吸収部 1 Peltier element 2 substrates 20 Thermal stress absorber

───────────────────────────────────────────────────── フロントページの続き (72)発明者 小松 照明 大阪府門真市大字門真1048番地松下電工 株式会社内 (72)発明者 岡田 浩明 大阪府門真市大字門真1048番地松下電工 株式会社内 (72)発明者 井上 宏之 大阪府門真市大字門真1048番地松下電工 株式会社内 (56)参考文献 特開 昭59−167077(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01L 35/32 F25B 21/02 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Komatsu Lighting, 1048, Kadoma, Kadoma, Osaka Prefecture, Matsushita Electric Works, Ltd. (72) Hiroaki Okada, 1048, Kadoma, Kadoma, Osaka Prefecture, Matsushita Electric Works, Ltd. (72) Inventor Hiroyuki Inoue 1048 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Works, Ltd. (56) Reference JP 59-167077 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 35/32 F25B 21/02

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 一対の基板間に複数個のペルチェ素子を
並置配設するとともに各基板に設けた接合電極にペルチ
ェ素子が接合されているペルチェモジュールであって、
接合電極が設けられている基板は、ペルチェ素子実装部
のペルチェ素子接合部間に、熱応力に応じて変形する熱
応力吸収部を備えていることを特徴とするペルチェモジ
ュール。
1. A Peltier module in which a plurality of Peltier devices are arranged side by side between a pair of substrates, and the Peltier device is joined to a joining electrode provided on each substrate.
The Peltier module, wherein the substrate on which the bonding electrodes are provided is provided with a thermal stress absorbing portion that deforms according to thermal stress between the Peltier element bonding portions of the Peltier device mounting portion.
【請求項2】 熱応力吸収部はペルチェ素子接合部の間
に形成された突条であることを特徴とする請求項1記載
のペルチェモジュール。
2. The Peltier module according to claim 1, wherein the thermal stress absorber is a ridge formed between the Peltier element joints.
【請求項3】 突条がペルチェ素子の配列位置決め部材
を兼ねていることを特徴とする請求項2記載のペルチェ
モジュール。
3. The Peltier module according to claim 2, wherein the protrusion also serves as an array positioning member for the Peltier element.
【請求項4】 熱交換部材が夫々の外面に固着される一
対の基板間に複数個のペルチェ素子を並置配設するとと
もに各基板に設けた接合電極にペルチェ素子が接合され
ているペルチェモジュールであって、基板はペルチェ素
子実装部領域の外周の熱交換部材取付領域において熱交
換部材が密着固定されており、基板のペルチェ素子実装
領域における外面と熱交換部材との間には微小隙間が設
けられていることを特徴とするペルチェモジュール。
4. A Peltier module in which a plurality of Peltier elements are arranged side by side between a pair of substrates whose heat exchange members are fixed to their respective outer surfaces, and the Peltier elements are joined to the joining electrodes provided on each substrate. The heat exchange member is closely attached and fixed in the heat exchange member mounting area on the outer periphery of the Peltier element mounting area of the substrate, and a minute gap is provided between the outer surface of the Peltier element mounting area of the substrate and the heat exchange member. Peltier module that is characterized by being.
JP12869195A 1995-05-26 1995-05-26 Peltier module Expired - Fee Related JP3520606B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12869195A JP3520606B2 (en) 1995-05-26 1995-05-26 Peltier module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12869195A JP3520606B2 (en) 1995-05-26 1995-05-26 Peltier module

Publications (2)

Publication Number Publication Date
JPH08321635A JPH08321635A (en) 1996-12-03
JP3520606B2 true JP3520606B2 (en) 2004-04-19

Family

ID=14991044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12869195A Expired - Fee Related JP3520606B2 (en) 1995-05-26 1995-05-26 Peltier module

Country Status (1)

Country Link
JP (1) JP3520606B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4528571B2 (en) * 2004-07-16 2010-08-18 株式会社東芝 Direct heat-electric converter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4497973A (en) * 1983-02-28 1985-02-05 Ecd-Anr Energy Conversion Company Thermoelectric device exhibiting decreased stress

Also Published As

Publication number Publication date
JPH08321635A (en) 1996-12-03

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