JP3504436B2 - Substrate single-wafer heat treatment system - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single wafer type heat treatment apparatus for heating a substrate by a lamp heat source.

[0002]

2. Description of the Related Art In the process of manufacturing substrates such as semiconductors,
Heat treatment is performed for various purposes during the process such as ion implantation and etching. Such heat-treating the applied device, in single wafer heat-treating One not a single substrate, the substrate heat treatment apparatus using a lamp heat source is known.

<First Prior Art> FIG. 17 is a perspective view of a first conventional single wafer processing apparatus. First, the substrate W
Is provided with a substrate upper surface heating source 103 in which a plurality of rod-shaped bipolar lamps 101 are arranged above. Below the substrate W, a substrate lower surface heating source 104 in which a plurality of rod-shaped bipolar lamps 101 are similarly arranged is provided. Here, the rod-shaped bipolar lamp 101 is
The rod-shaped lamp has electrodes 102 at both ends. As shown in the figure, the rod-shaped bipolar lamp 101 of the substrate upper surface heating source 103 and the rod-shaped bipolar lamp 101 of the substrate lower surface heating source 104 are arranged so as to be orthogonal to each other. The rod-shaped bipolar lamps 101 arranged in this way are connected to the same power source, with a group of about 2 to 4 lamps existing in the vicinity.

<Second Prior Art> FIG. 18 is a schematic view of a second conventional single-wafer heat treatment apparatus for substrates. The substrate W is received by the pins 110. Further, the pin 110 is connected to the column 108 and is rotated in the R direction by a motor (not shown). The single-pole lamps 105 are arranged in a circular shape above and below the substrate W, respectively. A reflection plate 107 is attached to the wall surface of the inner wall 109. Further, a reflection plate 106 is provided so as to effectively irradiate the substrate W with the light from the monopolar lamp 105.

Since the single-pole lamp 105 of such a single-wafer heat treatment apparatus is arranged in the peripheral portion of the substrate W, the substrate W
It can be assumed that more light is irradiated to the peripheral part than to the central part, and the temperature becomes higher in the peripheral part. In order to prevent this, in the prior art, the reflection plates 106, 10
By attaching 7 or devising the reflection plates 106 and 107 themselves (for example, by making the reflection surface a curved surface and condensing light on an arbitrary portion), the light radiated to the central portion and the light radiated to the peripheral portion can be The in-plane temperature distribution of the substrate W is made as uniform as possible by adjusting the distribution and further rotating the substrate W in the R direction.

<Third Prior Art> FIGS. 19 and 20
FIG. 3 is a schematic view of a third conventional single-wafer heat treatment apparatus for substrates. These are intended to be heated from the side surface of the substrate W. In the conventional example of FIG. 19, the rod-shaped bipolar lamps 101 are arranged in a cross pattern so as to surround the substrate W. Further, in the conventional example of FIG. 20, rod-shaped bipolar lamps 101 are arranged at equal intervals so as to surround the substrate W in a direction perpendicular to the substrate W.

Usually, in the process of heat treating a substrate,
In the constant temperature process and the temperature decreasing process, the temperature of the peripheral portion of the substrate is lower than that of the central portion. Therefore, in such a case, the arrangement of the rod-shaped bipolar lamps 101 shown in FIGS. 19 and 20 is effective.

[0008]

In the first conventional technique, the temperature distribution in the substrate surface is adjusted by the distribution of the electric power applied to the rod-shaped bipolar lamp 101, but the rod-shaped bipolar lamps 101 are arranged. The energy (light energy) emitted by light can be adjusted only in a specific direction. That is, if it is attempted to raise the temperature of the peripheral portion of the substrate W, the electric power of the rod-shaped bipolar lamp located in the shaded area shown in FIG. 21 is raised and the light energy is raised. In this case, comparing the region K2 and the region K1 shown in FIG. 21, the irradiation light energy is larger in the region K1. Therefore, the temperature of the peripheral portion of the substrate W also becomes higher in the region K1. In order to avoid such a phenomenon, it is necessary to enlarge the furnace body, but even if such measures are taken, it is inevitable that the load is deviated to a specific rod-shaped bipolar lamp. Further, in consideration of the case where the size of the substrate W is increased (the diameter is increased), it is necessary to increase the length of the rod-shaped bipolar lamp 101, but this causes a problem that the responsiveness of the lamp is deteriorated.

Next, in the second conventional technique, light from the monopolar lamps 105 attached to the upper and lower peripheral portions of the substrate W is also applied to the central portion of the substrate W by the reflectors 106 and 107. Because of this structure, uneven irradiation is likely to occur. The substrate W is rotated in order to reduce this influence as much as possible, but the size of the apparatus is inevitable for this reason. Further, when the substrate W has a large diameter,
It becomes more difficult to maintain the uniformity of the temperature from the central portion to the peripheral portion of the substrate W due to the uneven irradiation described above.

Next, the third conventional technique, as shown in FIG.
Since the rod-shaped bipolar lamp is arranged so as to surround the outer circumference of the substrate W as shown in FIG. 9 or FIG. 20, after the heat treatment is completed, the substrate W is lowered to the dotted line portion in the drawing and taken out from the furnace. Will be needed. On the contrary, when performing the heat treatment, the substrate W is inserted into the dotted line portion in the furnace and is raised from there to a predetermined position where the heat treatment is performed. Such a device is complicated in structure, large in size, and expensive. Further, the efficiency is reduced by the time required for the vertical movement of the substrate W.

The present invention has been made in view of the above problems, and provides a single-wafer type heat treatment apparatus for substrates, which does not need to be large in size and maintains good in-plane temperature uniformity of the substrate. The purpose is to

[0012]

A single-wafer type heat treatment apparatus for heating a substrate by a lamp heat source, comprising: (a) a position along an outer shape of the substrate in a first plane substantially parallel to the substrate. Multiple monopole lamps are arranged in the
The pump faces a peripheral portion of the substrate in the first surface.
A substrate peripheral portion heating means for heating the peripheral portion of the substrate by surface emitting at a position, and (b) a surface substantially parallel to the substrate on the same side as the substrate peripheral portion heating means with respect to the substrate. Within the second surface defined at a position farther from the substrate than the first surface, a plurality of rod-shaped bipolar lamps arranged at substantially equal intervals are provided at positions facing the central portion of the substrate to cause the substrate to move. And a substrate central portion heating means for heating the central portion.

According to a second aspect of the present invention, in the single-wafer type heat treatment apparatus for a substrate according to the first aspect, (c) the substrate periphery
The side facing the substrate heating means and the substrate center heating means is
It is made of a transparent material and contains a substrate that houses the substrate inside.
A chamber, and the substrate on the side of the chamber.
A loading / unloading port for the substrate is formed, and the substrate center heating means is provided.
The plurality of rod-shaped bipolar lamps in
The feature is that they are arranged at substantially equal intervals in the direction toward which
It

The invention according to claim 3 is the invention according to claim 1 or 2.
In the single-wafer heat treatment apparatus for a substrate according to
A monopole lamp is provided in the center of the substrate in the first plane.
Characterized by being able to move back and forth toward the corresponding position
is doing.

The invention according to a fourth aspect is the first to the third aspects.
In the single-wafer heat treatment apparatus for a substrate according to any one of,
(d) The substrate peripheral heating means and the substrate central heating means
And a water cooling means for water cooling
ing.

The invention according to a fifth aspect is the first to the fourth aspects.
In the single-wafer heat treatment apparatus for a substrate according to any one of,
(e) The substrate peripheral heating means and the substrate central heating means
And an air-cooling means for air-cooling
ing.

The invention according to claim 6 is the same as claims 1 to 5.
In the single-wafer heat treatment apparatus for a substrate according to any one of,
(f) The substrate peripheral portion heating means and the substrate central portion heating means
Further comprising a radiant heat diffuser plate disposed between
Is characterized by.

The invention described in claim 7 is the invention according to claims 1 to 6.
In the single-wafer heat treatment apparatus for a substrate according to any one of,
The substrate center heating means is a plurality of rod-shaped bipolar lamps.
As a plurality of first rod-shaped bipolar electrodes arranged at substantially equal intervals
Lamp and the plurality of first rod-shaped bipolar lamps are orthogonal to each other.
A plurality of second rod-shaped bipolar runs arranged at substantially equal intervals.
It is characterized by including the following.

[0019]

[0020]

1 is a perspective view of a single-wafer type heat treatment apparatus for substrates showing the concept of the present invention. The single-pole lamps 2 are arranged above the substrate W in a plurality of circular shapes at substantially equal intervals.
This serves as a substrate peripheral portion heating source 13 for heating the peripheral portion of the substrate W. And above that, a rod-shaped bipolar lamp 1
A plurality of first rod-shaped lamp heating sources 11 arranged in parallel,
Similarly, a plurality of rod-shaped bipolar lamps 1 are arranged in parallel with a second rod-shaped lamp heating source 12. The rod-shaped bipolar lamp 1 forming the first rod-shaped lamp heating source 11 and the rod-shaped bipolar lamp 1 forming the second rod-shaped lamp heating source 12 are orthogonal to each other. These first rod-shaped lamp heating source 11 and second
The rod-shaped lamp heating source 12 is a substrate central heating source 14 for heating the central portion of the substrate W.

FIG. 2 is a plan view showing the structure of the substrate peripheral heating source 13 shown in FIG. The monopolar lamp 2 used here has filaments arranged in a plane, and the light source of the lamp emits surface light. In FIG. 2, a portion indicated by a dotted line in each monopolar lamp 2 indicates a light emitting surface of the lamp. The light emitting surface is arranged parallel to the substrate surface so that the substrate surface is irradiated with the maximum light energy. Then, the two single-pole lamps 2 are divided into one zone, and Z
Eight zones are provided from 1 to Z8. A zone controls the light energy emitted by a single power source.

FIG. 3 shows the first rod-shaped lamp heating source 11 of FIG.
FIG. 3 is a plan view of a substrate central heating source 14 including a second rod-shaped lamp heating source 12 and the second rod-shaped lamp heating source 12. As shown in the figure, rod-shaped bipolar lamps 1 having electrodes on both ends of the rod-shaped lamp are arranged in a grid pattern, and four rod-shaped bipolar lamps 1 are divided into zones as one unit. The divided zones are Z9 to Z14 shown in the figure. In this case as well, the irradiation energy is controlled by a single power source for each zone in the same manner as the substrate peripheral heating source.

The zone divisions shown in FIGS. 2 and 3 are merely examples, and the number of divisions may be changed as necessary.

Here, the concept of irradiating the substrate with the rod-shaped bipolar lamp 1 and the monopolar lamp 2 will be described with reference to FIG. Figure 4
FIG. 1 is a side view of a single-wafer heat treatment apparatus for substrates showing the concept of the present invention. It should be noted that the influence of the reflector described later is not taken into consideration in this description. The substrate peripheral heating source 13 composed of the monopolar lamp 2 irradiates the peripheral portion of the substrate W, and the substrate central heating source 14 composed of the rod-shaped bipolar lamp 1 irradiates the central portion of the substrate W. The light emitting surface of the monopolar lamp 2 is the substrate W.
Therefore, the peripheral portion of the substrate W is efficiently irradiated. The light emitted from the lamp may be emitted in any direction, but in FIG. 4, only the light emitted in the same direction (the direction of the substrate W) was considered.

Next, embodiments of the present invention will be specifically described.

FIG. 5 is a diagram showing an embodiment of the present invention. The substrate center heating device 20 includes a rod-shaped bipolar lamp 1
A substrate central heating source 14 constituted by is attached.
A water channel 4 for passing cooling water is formed in a meandering manner inside the substrate central heating device 20, and the water channel 4 is connected to a water supply port and a drain port. Then, cooling water is supplied from the water supply pipes 5a and 5c formed at the water supply port, and after passing through the water channel 4, the cooling water is drained from the drainage pipes 5b and 5d provided at the drainage port. As the cooling water cools the substrate central part heating device 20 while meandering through the water passage 4, there is an effect of cooling the substrate central part heating source 14.

The monopole lamp 2 is mounted in a circular (radial) shape on the cylindrical substrate peripheral heating device 30,
A disk-shaped semitransparent radiant heat diffusion plate 3 is provided above the monopolar lamp 2. Further, the substrate peripheral portion heating device 30 is provided with a cooling water channel 4 similarly to the substrate central portion heating device 20, and supplies and drains the cooling water from a water supply port and a drain port (not shown). The cooling water cools the substrate peripheral heating device 30 and the monopolar lamp 2 that is the substrate peripheral heating source.

As an example of how to mount the monopolar lamp 2, there is a mode shown in FIG. FIG. 6 is a diagram showing an example of attachment of the monopolar lamp 2. This figure is constructed so that the position of the monopolar lamp 2 can be moved. Attach the L-shaped fixture 31 bent at about 90 ° to the screw 3
2 is attached to the substrate peripheral heating device 30. A lamp stopper 34 having a screw hole is attached to the monopolar lamp 2.

Then, screw 3 into the long hole L opened in the fixture 31.
The monopolar lamp 2 is fixed by passing the screw 3 through the screw 3 and rotatingly inserting the screw 33 into the screw hole of the lamp stopper 34. Here, the longitudinal direction of the long hole L is the T direction in FIG. Therefore, by slightly loosening the screw 33, the lamp stopper 34 can be freely moved in the T direction and the -T direction. At this time, the monopolar lamp 2 and the lamp stopper 3
Since 4 is integrated, the monopolar lamp 2 can also freely move back and forth in the T direction and the -T direction (that is, to the side toward the center of the radial arrangement and to the opposite side).

Therefore, even if the size or outer shape of the substrate to be heat-treated is changed, the position of the monopolar lamp 2 is moved (advanced or retracted) to realize the original purpose of heating the peripheral portion of the substrate. It is possible.

Further, by advancing and retracting such a position of the monopolar lamp 2, it becomes possible to finely adjust the temperature distribution in the substrate surface. FIG. 7 is a diagram showing temperature distribution adjustment depending on the position of the monopolar lamp. In the graphs of FIGS. 7A and 7B, the horizontal axis indicates the position on the substrate, the center of the substrate is 0, and the position in the radial direction is indicated. The vertical axis shows the temperature at that point on the substrate. In the figure, r indicates the radius of the substrate. First, when the temperature is low near the center A as shown in FIG. 7A and is high from the center to the peripheral portion of the substrate, the monopolar lamp is moved in the −T direction to move the substrate surface. The temperature inside can be made uniform. Further, as shown in FIG. 7B, when the temperature is high from the center to the vicinity of B and is low from the center to the peripheral portion of the substrate, the monopolar lamp is moved in the T direction, and The temperature can be made uniform.

Next, the radiant heat diffusion plate 3 shown in FIG. 5 will be described. FIG. 8 is a diagram showing the radiant heat diffusion plate 3 of the present invention. As shown in FIG. 8, the radiant heat diffusion plate 3 has a circular transparent quartz plate having a diffusion portion G formed in the central portion (hatched area), and the peripheral portion of the radiant heat diffusion plate 3 has a plurality of holes. H is formed. An example of the diffusing section G is one having fine irregularities formed on the surface, such as frosted glass.
The diffusing section G may be any one that produces an effect of diffusing incident light. The holes H formed in the peripheral portion of the radiant heat diffusion plate 3 reduce unnecessary heat absorption in the transparent quartz part by removing unnecessary transparent quartz part in terms of strength, and
The purpose is to improve the breathability of cooling air.

FIG. 9 is a diagram showing the effect when the radiant heat diffusion plate 3 is used. First, as shown in FIG. 9A, the diffuser G diffuses the light emitted from the substrate central heating source 14 including the first rod-shaped lamp heating source 11 and the second rod-shaped lamp heating source 12 formed of the rod-shaped bipolar lamp 1. However, it has an effect of eliminating uneven irradiation on the substrate W. FIG. 9B is an example showing the temperature distribution on the substrate surface when the radiant heat diffusion plate 3 is not present. When temperature unevenness occurs in the substrate surface as shown in FIG. 9B, the radiant heat diffusion plate 3 is provided at the position shown in FIG. As a result, and as a result, FIG.
As shown in (c), it is possible to make the in-plane temperature distribution of the substrate uniform. Further, the radiant heat diffusion plate 3 diffuses the irradiation from the center of the substrate to the peripheral portion, thereby heating the peripheral portion of the substrate 3
Even if the output of 0 is reduced, the light irradiated on the surface of the substrate can be made to approach uniformly, which prevents the deterioration of a monopolar lamp having a surface emitting portion, which is more expensive than a rod-shaped lamp, and has a long life. Made possible. If the radiant heat diffusion plate 3 is not present and the in-plane temperature distribution of the substrate is uniform, it is not necessary to provide the radiant heat diffusion plate 3.

Returning to FIG. 5 again, the substrate center heating device 20.
Further, a reflection plate for reflecting the light energy emitted by the lamp is attached to the wall surface inside the furnace of the substrate peripheral heating device 30. As an embodiment of the present invention, as a reflecting plate by applying gold plating to the inner wall surface of the furnace,
Although the effect of reflecting the light energy from the lamp is obtained, the present invention is not limited to this as long as it has the effect of reflecting the light energy. Further, due to the arrangement of the lamps of the present invention, the reflector need not have the function of condensing light. Therefore, uneven irradiation due to the reflected light from the reflector does not occur.

The substrate W is placed in a chamber 8 partitioned by a quartz window 6. The chamber 8 is completely shut off from the outside. The substrate W is held by the quartz pin 7. A lid 9 is provided at a transfer port for transferring the substrate W into the furnace, and is configured to maintain the atmosphere in the chamber 8.

Here, the process of actually heat-treating the substrate will be described. FIG. 10 is a diagram showing a process of heat-treating a substrate. FIG. 10A shows the relationship between the time and the target temperature when the heat treatment of the substrate is performed. The heat treatment process can be divided into four processes: a temperature raising process, a holding (constant temperature) process, a temperature lowering process, and a cooling process. FIG. 10B shows a substrate central heating source 14 (see FIG. 1) and a substrate peripheral heating source 13 in each process.
It is the relation of the total output. Figure 10 shows the in-plane temperature of the substrate.
In order to achieve the target temperature of (a), controlled output is performed based on the data measured by the temperature sensor. The method of measuring the temperature by the temperature sensor and the method of controlling the temperature are not related to the gist of the present invention, and the description thereof will be omitted.

As described in the prior art, in general, the temperature distribution in the surface of the substrate has such a characteristic that the temperature of the peripheral portion of the substrate is high during the temperature rising process and the temperature of the peripheral portion of the substrate is low during the holding and cooling process due to structural reasons. Have. Therefore, as an example, FIG. 10C is shown in each process of temperature raising, holding, and temperature lowering.
As described above, the output ratio between the substrate peripheral heating source and the substrate central heating source may be controlled. In the same figure (c), it is possible to prevent the temperature of the peripheral portion of the substrate from becoming lower than that of the central portion by increasing the output ratio in the peripheral portion than in the central portion in the holding and cooling process. Other output ratios may be adopted for the purpose of making the in-plane temperature distribution uniform.

Next, the air-cooling cover will be described. FIG. 11 is a view showing the air-cooling cover of the present invention. The substrate center heating device and the substrate peripheral heating device are covered with a single cover 41. An exhaust port is provided in the center of the upper surface of the cover, and an exhaust pipe 44 is attached to the exhaust port. In addition, air inlets are provided at multiple locations around the bottom surface of the cover (positions that do not interfere with the furnace).
An air supply pipe 45 is attached to the air supply port.

When the heat treatment process enters the cooling process, the air supply pipe 4
Cooling air is supplied from 5. Then, air flows in the direction of the arrow shown in the figure. And the air flows into the furnace,
First, the substrate peripheral heating device and the quartz window are cooled, and then the substrate central heating device is cooled through the holes formed in the peripheral part of the radiant heat diffusion plate. The air that has cooled the substrate central heating device is discharged from the exhaust port to the exhaust pipe.
However, in the case of the cover 41 as shown in FIG. 11, since the air flowing through the arrow P1 does not pass through the high temperature portion, the cooling effect is not produced. In such a case, it is effective to use the cover shown in FIG.

FIG. 12 is a view showing an air-cooling cover of the present invention different from that of FIG. FIG. 12 includes a substrate center heating device cover 42 and a substrate peripheral region heating device cover 43, and a partition 46 is provided between the substrate central region heating device cover 42 and the substrate peripheral region heating device cover 43. Since it exists, all the cooling air flowing from the air supply port flows into the furnace, and the cooling efficiency can be improved.

The cover shown in FIGS. 11 and 12 was intended to secure a flow path for cooling air to improve the cooling efficiency, but the effect obtained is that the quartz window was damaged in addition to the above purpose. At this time, it is effective in preventing the process gas in the chamber from leaking to the outside of the single-wafer heat treatment apparatus.

FIG. 13 shows the appearance of the single-wafer heat treatment apparatus for substrates of the present invention when the air-cooling cover shown in FIG. 12 is used. A support damper 51 and an arm 52 are attached to the substrate center heating device cover 42.
2 can rotate about a fulcrum 54. The support damper 51 expands and contracts by the rotational movement of the arm 52. Further, a stopper 53 is installed on the rotation orbit of the arm 52. By these, it becomes possible to open the substrate center heating device cover 42 as shown in FIG.
This makes it possible to efficiently perform maintenance on chambers, lamps and the like.

Next, a modified example of the present invention will be described. Consider the case where the chamber has a shape as shown in FIG. 15 in the practice of the present invention. Regarding the X direction in the figure,
The internal structure of the chamber 8 has a line-symmetrical relationship at the center. Therefore, since there are no structurally non-uniform factors, the light energy applied to the substrate W may be equal in the X direction. Regarding the Y direction in the drawing, the internal structure of the chamber 8 is not symmetrical even in the center because the loading / unloading port 10 for the substrate W is provided. That is, since the carry-in / out port 10 is a nonuniform factor in the structure, the light energy is Y
Need to adjust in direction. Therefore, the substrate central heating source 14 composed of the rod-shaped bipolar lamp 1 may be arranged as shown in FIG. That is, a plurality of lamps may be arranged at substantially equal intervals in the direction in which the non-uniformity factor exists (the loading / unloading direction of the substrate or the direction toward the loading / unloading port 10).
Then, by adjusting the output of each rod-shaped bipolar lamp 1, the non-uniformity factor is eliminated.

As described above, if the central portion of the substrate is heated by the rod-shaped bipolar lamp and the peripheral portion of the substrate is heated by the monopolar lamp, even if the size of the substrate becomes large. It is possible to respond flexibly. FIG. 16 is a diagram showing an example in which the present invention is applied to a large-diameter substrate WW. Here, the large-diameter substrate WW refers to a substrate having a diameter of about 300 mm. The figure shows that it is not necessary to make the rod-shaped bipolar lamp 1 longer than in the conventional case, and it is sufficient to design so that the position of the monopolar lamp 2 is arranged outside. Therefore, it is not necessary to sacrifice the response time, and the processing time does not change even if the substrate has a large diameter.

[0045]

As described above, according to the first aspect of the invention, it is possible to adjust the non-uniformity of the in-plane temperature of the substrate during the heat treatment process. That is, in the holding process and the temperature lowering process, the temperature is generally lower in the peripheral portion than in the central portion of the substrate. Therefore, in such a case, by increasing the output of the substrate peripheral heating means or the output of the substrate central heating means . By lowering the temperature, it becomes possible to maintain the in-plane temperature distribution of the substrate uniform. Also, the board peripheral area
Since multiple monopole lamps are used as heating means, single wafer
It is possible to avoid increasing the size of the heat treatment apparatus.

According to the second aspect of the invention, the substrate center
Multiple rod-shaped bipolar lamps in the heating means
The boards are arranged at approximately equal intervals in the direction toward
Cancel the structural non-uniformity factor existing in the entry direction
So that the heat treatment can be performed. Also, a rod-shaped bipolar run
Costs are reduced because there is no need to arrange the groups in a grid.
It is possible to reduce the size of the device as well as
There is also a fruit.

According to the invention of claim 3, the circumference of the substrate is
If irradiation unevenness occurs on the sides or the size of the substrate changes
If more than one, move multiple monopole lamps back and forth.
Can be adjusted or dealt with.

According to the invention of claim 4, the cooling process
To improve cooling efficiency and reduce cooling time
It has an effect and an effect of preventing deterioration due to overheating of the lamp.

According to the invention of claim 5, claim 4
Similar to the effect of the invention of, the cooling efficiency is increased and cooling is required.
This saves time and further damage the quartz window, etc.
Process gas in the chamber leaks out of the equipment
You can prevent it from leaking out.

According to the invention described in claim 6, in the substrate
Prevents uneven irradiation in the central area,
The degree can be uniform.

According to the invention of claim 7, heat treatment
To further improve the in-plane temperature uniformity of the substrate.
You can

[0052]

[Brief description of drawings]

FIG. 1 is a perspective view of a substrate type single-wafer heat treatment apparatus showing the concept of the present invention.

FIG. 2 is a plan view showing the configuration of a substrate peripheral heating source of the present invention.

FIG. 3 is a plan view of a substrate central heating source including a first rod-shaped lamp heating source and a second rod-shaped lamp heating source according to the present invention.

FIG. 4 is a side view of a substrate single-wafer heat treatment apparatus showing the concept of the present invention.

FIG. 5 is a diagram showing an embodiment of the present invention.

FIG. 6 is a diagram showing an example of attachment of the monopolar lamp of the present invention.

FIG. 7 is a diagram showing the temperature adjustment according to the position of the monopolar lamp of the present invention.

FIG. 8 is a diagram showing a radiant heat diffusion plate of the present invention.

FIG. 9 is a diagram showing an effect when the radiant heat diffusion plate of the present invention is used.

FIG. 10 is a diagram showing a process of applying heat treatment to the substrate of the present invention.

FIG. 11 is a view showing an air-cooling cover of the present invention.

FIG. 12 is a view showing an air-cooling cover of the present invention.

FIG. 13 is a diagram showing the external appearance of a single-wafer heat treatment apparatus for substrates according to the present invention.

FIG. 14 is a view showing an open state of a substrate central heating device cover.

FIG. 15 is a diagram showing a modification of the substrate central heating source.

FIG. 16 is a diagram showing an example in which the present invention is applied to a large-diameter substrate.

FIG. 17 is a perspective view of a first conventional single-wafer heat treatment apparatus for substrates.

FIG. 18 is a schematic view of a second conventional single-wafer heat treatment apparatus for substrates.

FIG. 19 is a schematic view of a third conventional single-wafer heat treatment apparatus for substrates.

FIG. 20 is a schematic view of a third conventional single-wafer heat treatment apparatus for substrates.

FIG. 21 is a diagram showing heating of the peripheral portion of the substrate in the first conventional technique.

[Explanation of symbols]

1 Rod-shaped bipolar lamp 2 single pole lamp 3 Radiant heat diffusion plate 4 waterways 11 First rod-shaped lamp heating source 12 Second rod-shaped lamp heating source 13 PCB peripheral heating source 14 Substrate central heating source 20 Substrate center heating device 30 Substrate peripheral heating device W board

Continuation of front page (56) Reference JP-A-3-116828 (JP, A) JP-A-4-255214 (JP, A) JP-A-4-286319 (JP, A) JP-A-8-139047 (JP , A) JP-A-7-130678 (JP, A) JP-A-4-265318 (JP, A) Fukui Sho 61-46732 (JP, U) (58) Fields investigated (Int.Cl. ⁷ , DB) Name) H01L 21/26-21/268 H01L 21/322-21/326 H01L 21/205 H01L 21/31

Claims (7)

(57) [Claims] 1. A single wafer type heat treatment apparatus for heating a substrate by a lamp heat source, comprising: (a) a plurality of single units at positions along the outer shape of the substrate in a first plane substantially parallel to the substrate. Array of pole lamps, individually
A monopole lamp in the first plane in the periphery of the substrate
A substrate peripheral part heating means for heating the peripheral part of the substrate by surface emitting at a position facing (b) a surface substantially parallel to the substrate on the same side of the substrate as the substrate peripheral part heating means. In the second surface defined at a position farther from the substrate than the first surface, a plurality of rod-shaped bipolar lamps arranged at substantially equal intervals are provided at positions facing the central portion of the substrate, And a substrate central part heating means for heating the central part of the substrate. 2. The single-wafer heat treatment apparatus for a substrate according to claim 1, wherein (c) the side facing the substrate peripheral heating means and the substrate central heating means is a transparent body, and A chamber for accommodating the substrate is further provided, and a loading / unloading port for the substrate is formed at a side portion of the chamber, and the plurality of rod-shaped bipolar lamps in the heating means for heating the central portion of the substrate are arranged in a direction toward the loading / unloading port. A single-wafer heat treatment apparatus for substrates, which is arranged at substantially equal intervals. 3. The single-wafer type heat treatment apparatus for a substrate according to claim 1, wherein the plurality of monopolar lamps are directed toward a position corresponding to a central portion of the substrate in the first plane. A single-wafer heat treatment apparatus for substrates, which is capable of advancing and retreating. 4. The single-wafer heat treatment apparatus for a substrate according to claim 1, further comprising: (d) water cooling means for water cooling the substrate peripheral portion heating means and the substrate central portion heating means. A single-wafer heat treatment apparatus for substrates, characterized by comprising: 5. The single-wafer heat treatment apparatus for a substrate according to claim 1, further comprising: (e) air cooling means for air-cooling the substrate peripheral heating means and the substrate central heating means. A single-wafer heat treatment apparatus for substrates, characterized by comprising: 6. The single-wafer heat treatment apparatus for a substrate according to claim 1, wherein: (f) radiant heat disposed between the substrate peripheral portion heating means and the substrate central portion heating means. A single substrate heat treatment apparatus for substrates, further comprising a diffusion plate. 7. The single-wafer heat treatment apparatus for a substrate according to claim 1, wherein the substrate central heating means is a plurality of rod-shaped bipolar lamps arranged at substantially equal intervals. A first rod-shaped bipolar lamp; and a plurality of second rod-shaped bipolar lamps arranged at substantially equal intervals so as to be orthogonal to the plurality of first rod-shaped bipolar lamps. Single wafer heat treatment equipment.