JP3500299B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device suitable for inspecting a plurality of semiconductor elements formed on a wafer in a wafer state and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, a prober such as a manual prober, a semi-auto prober or a full auto prober has been used for inspecting a semiconductor element formed on a wafer in a wafer state. A method using a probe sheet disclosed in Kaihei 8-5666 has been developed.

Hereinafter, an inspection method in a wafer state using the conventional probe sheet disclosed in the above publication will be described.

FIG. 19 is a sectional view schematically showing the above-mentioned conventional inspection method. As shown in the figure, a large number of semiconductor elements (not shown) are provided on the wafer 101, and on the main surface of the wafer 101, element electrodes (not shown) of the semiconductor elements are electrically connected, respectively. A large number of electrode pads 102 are arranged. Then, the inspection apparatus includes a holder 103 for holding the wafer 101 and a holder 10.
3, a sealant 104 surrounding the installation region of the wafer 101, a suction nozzle 105 penetrating the sealant 104, and a probe terminal 107 for electrically connecting the electrode pad 102 on the wafer 101 are disposed. And the elastic body 108 provided on the probe sheet 106 and having conductivity only in the vertical direction.
And an insulating substrate (inspection board) 109 on which an electrode 110 electrically connected to the probe terminal 107 via the elastic body 108 is arranged.

At the time of inspection, the electrode pad 102 on the wafer 101 and the probe terminal 107 in the probe sheet 106.
While the probe sheet 106 and the seal sheet 104 are in close contact with each other, a vacuum is drawn from the suction nozzle 105. As a result, the area on the wafer 101 surrounded by the sealing material 104 and the probe sheet 106 is in a reduced pressure state, and the electrode pads 102 on the wafer 101 and the probe terminals 107 in the probe sheet 106 are maintained in a stable contact state. It Then, in this state, various characteristics of the semiconductor element and the presence or absence of disconnection of the wiring are inspected to check the existence of defective products.

According to this method, by depressurizing the inside while sealing with the sealing material 104, a pressing force can be uniformly applied between the electrode pads 102 and the probe terminals 107, which are in the thousands to tens of thousands. , Elastic body 10
8 by the electrode pad 102 and the probe terminal 107
It is possible to reliably contact the electrode pad 102 and the probe terminal 107 by absorbing the height variation of the wafer and the warp of the wafer 101.

[0007]

However, the conventional inspection technique in the wafer state has the following problems.

First, the electrode pad 10 on the wafer 101
2 is provided on the holding body 103 in order to reduce the pressure in the contact area between the probe sheet 107 and the probe terminal 107 of the probe sheet 106. Deterioration is likely to occur and durability cannot be expected so much. In particular, if the test temperature is raised in order to shorten the burn-in test time in the future, frequent replacement may be necessary.

Second, the insulating substrate 109 and the holding plate 103
The probe sheet 106 and the elastic body 108 are disposed between the probe terminal 107 and the elastic body 108 between the electrode 110 of the insulating substrate 109 and the electrode pad 102 on the wafer 101. Terminals (not shown) are interposed. That is, these members are elements that make the electrical connection between the electrode 110 on the insulating substrate 109 and the electrode pad 102 on the wafer 101 defective.
Therefore, the reliability of the inspection may be reduced, and
This has led to an increase in cost for perfecting the electrical connection between the two.

Further, the elastic body 10 is used under high temperature.
8 deteriorates, the probe terminal 107 and the electrode pad 1
Since the variation in height of 02 cannot be absorbed, the elastic body 108 must be replaced.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a member having a function of a seal member, an elastic body, or a probe sheet in the above-described conventional semiconductor device inspection apparatus on a wafer. It is an object of the present invention to provide a semiconductor device which can be inspected in a wafer state at low cost and with high reliability, and a manufacturing method thereof.

In order to achieve the above object, in the present invention, means relating to the semiconductor device described in claims 1 to 10 and means relating to the method for manufacturing a semiconductor device described in claims 11 and 12 , According to claim 13.
And a method relating to the inspection method of the semiconductor device .

As described in claim 1, a semiconductor device of the present invention is arranged such that a wafer having a plurality of semiconductor elements and a main surface of the wafer are electrically connected to each of the plurality of semiconductor elements. A plurality of element electrodes to be connected,
Formed on the main surface of the wafer so as to surround the plurality of semiconductor elements and the plurality of element electrodes, and in a surrounding area.
And an annular dam made of an elastic material that exhibits a sealing function when the pressure is reduced .

As a result, the contact area between the member connected to the element electrode of the wafer and the member on the inspection device side disposed thereabove can be sealed by the annular dam, so that there is no seal member on the inspection device side. It is possible to perform an inspection while maintaining the contact area between the two in a reduced pressure state. Since this annular dam is provided for each wafer, it is not used repeatedly, and there is no problem of performance deterioration or replacement work. Therefore, highly reliable inspection can be performed, and the manufacturing cost of the semiconductor device can be reduced.

According to a second aspect of the present invention, in the above-mentioned semiconductor device, the elastic device is formed on the plurality of semiconductor elements on the main surface of the wafer and has an opening above the plurality of element electrodes. A protective layer made of a certain insulating material, further comprising a plurality of external electrodes formed on the protective layer and electrically connected to the plurality of element electrodes, respectively, an elastic material constituting the annular dam, The elastic insulating material forming the protective layer is preferably the same material.

As a result, the inspection can be performed by bringing the external electrodes into contact with the terminals on the inspection device side instead of the device electrodes on the wafer. In that case, since an elastic protective layer is provided below the external electrode, the protective layer absorbs the warp of the wafer and the variations in the height of the external electrode and the terminals on the inspection device side. Since the electrical connection state can be stabilized, it is not necessary to dispose the elastic body in the conventional inspection device, for example, in the inspection device for inspecting this semiconductor device. Therefore, the inspection device for inspecting this semiconductor device can reliably reduce the number of elements that make the electrical connection between the member on the wafer and the member on the inspection device side defective as compared with the conventional inspection device. It is possible to improve the reliability of the inspection.
Moreover, since the protective layer is made of the same material as the annular dam, the manufacturing process of the semiconductor device is simplified and the manufacturing cost is not increased. Also, because of the protective layer,
Since the thermal stress on the wiring pattern connecting the element electrodes and the external electrodes on the wafer can be relaxed, the reliability can be improved.

As described in claim 3, it is preferable that the semiconductor device further includes a protruding terminal formed on the plurality of external electrodes.

As a result, the function of the probe terminal of the probe sheet in the above-described conventional inspection apparatus can be obtained by the protruding terminal on the protective layer. Therefore, in this semiconductor device inspection apparatus, the probe in the above-described conventional inspection apparatus is used. It is sufficient to remove the sheet and bring the protruding terminals into contact with the electrodes on the insulating substrate. That is, the inspection cost is reduced by reducing the necessary members in the inspection apparatus, and the reliability of the inspection is improved by further reducing the elements that cause the defective electrical connection between the members on the wafer and the members of the inspection apparatus. Can be achieved.

According to a fourth aspect of the present invention, in the semiconductor device, the upper end of the annular dam is preferably higher than the upper end of the protective layer.

As a result, it is possible to more reliably bring the area inside the annular dam into a depressurized state.

As described in claim 5, in the semiconductor device, a cutout portion can be provided in a part of the annular dam.

With this, it is possible to reduce the pressure inside the annular dam through the notch.

According to the sixth aspect of the present invention, in the semiconductor device, the annular dam can be provided with a plurality of rows of annular protrusions along the outer periphery of the wafer.

As described in claim 7, in the semiconductor device, it is preferable that the annular dam has a vertical cross-sectional shape that is inclined downward toward the inside of the wafer.

As a result, it is possible to more reliably maintain the decompressed state in the area inside the annular dam.

As described in claim 8, in the semiconductor device, it is preferable that the upper ends of the annular convex portions of the annular dams in the plurality of rows are lower toward the inside of the wafer. .

In the above semiconductor device, a recess may be formed in the upper end of the annular dam.

As a result, the concave portion at the upper end of the annular convex portion of the annular dam plays the role of a suction cup, so that during inspection of the semiconductor device, the members on the inspection device side and the members on the wafer side that should come into contact with each other are aligned. It is possible to suppress the deviation between the two after the operation.

According to a tenth aspect of the present invention, the semiconductor device may further include a conductor layer that covers at least a part of the surface of the annular dam.

As a result, it becomes possible to electrically connect the conductor layer on the surface of the annular dam and the power source or the ground of the plurality of semiconductor elements on the wafer, and inspect the conductor layer for the plurality of semiconductor elements. Since it can be used collectively as a power supply or a ground when performing, the number of power supply terminals or ground terminals on the inspection device side can be significantly reduced.

According to a method of manufacturing a semiconductor device of the present invention, as described in claim 11, a first step of forming a plurality of semiconductor elements on a wafer, and a step of forming the semiconductor elements on the main surface of the wafer. A second step of forming a plurality of element electrodes connected to each other, and an arrangement for enclosing the plurality of semiconductor elements and the plurality of element electrodes on the main surface of the wafer.
It is a storage device, and when the surrounding area becomes decompressed, the
And a third step of forming an annular dam made of an elastic material that exerts a function as a rule .

With this method, the structure of the semiconductor device according to the first aspect can be easily realized.

According to a twelfth aspect of the present invention, in the method of manufacturing a semiconductor device, the third step is:
An insulating material is used as the elastic material, and a protective layer having an opening above the plurality of device electrodes is formed on the main surface of the wafer,
It is preferably formed with the annular dam.

With this method, the structure of the semiconductor device according to claim 2 can be easily realized. Half of the invention
The inspection method for the conductor device is described in claim 13.
The electrode pad on the wafer and the semiconductor element.
The terminal for performing the characteristic inspection of the child and the
The first step of arranging so that it can be electrically connected, and
Second for sealing the area on the wafer surrounded by the annular dam
And the area above the wafer surrounded by the annular dam.
And a third step of reducing the pressure to a depressurized state.

[0035]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) First, a semiconductor device according to a first embodiment, a method of manufacturing the same, and an inspection method thereof will be described with reference to FIGS.

1A and 1B are a plan view and a sectional view of the semiconductor device according to the first embodiment. Figure 1
As shown in (a) and (b), a chip region Rtp that has a large number of semiconductor elements (not shown) and is then individually divided is formed on the wafer 10 made of a silicon substrate. Note that, for convenience, only 12 chip regions Rtp are shown in FIG. 1A and only three chip regions Rtp are shown in FIG. 1B, but in reality, an extremely large number of chip regions Rtp are shown. Needless to say, is formed.
Then, on the main surface of the wafer 10, electrode pads 12 connected to the device electrodes 11 of the semiconductor device are arranged.
However, although not shown, a passivation film is formed on the device electrode 11, and a wide electrode pad 12 is formed on the device electrode 11 exposed in the opening of the passivation film.
Are formed. An annular dam 13a surrounding the semiconductor element and the electrode pad 12 is provided near the outer periphery of the main surface of the wafer 10. The annular dam 13a is made of an elastic (stretchable) insulating material such as silicon rubber, polyimide, or epoxy. The annular dam 13a may be formed at a position having an end face that matches the end face of the wafer 10,
It may be formed at a position slightly inward from the end surface of the wafer 10.

2A to 2D are sectional views showing a method of manufacturing a semiconductor device according to this embodiment.

First, in the step shown in FIG. 2A, a semiconductor element and an electrode pad 12 connected to an element electrode 11 of the semiconductor element are formed on the wafer 10.

Next, in the step shown in FIG. 2B, the insulating material film 1 is formed by applying a photosensitive insulating material on the entire surface of the wafer 10 to a thickness of about 150 μm and drying it.
3 is formed.

In order to exert the sealing function during the inspection of this semiconductor device, the insulating material film 13 is preferably applied with a large thickness within a range that does not interfere with the steps after the application.
For example, it may be about 500 μm or about 1 mm.

The material having photosensitivity may be, for example, a polymer such as ester bond type polyimide or acrylate epoxy, as long as it has a low elastic modulus. However, it does not necessarily have to be an insulating material, and may be a conductor film.

Next, in the step shown in FIG. 2C, the dried insulating material film 13 is exposed using a mask having an opening only in the peripheral portion of the wafer 10.

Further, in the step shown in FIG. 2D, the exposed insulating material film 13 is developed to form an annular dam 13a in the peripheral portion of the wafer 10.

The cross-sectional shape of the annular dam 13a need not be rectangular as shown in FIGS. 1 and 2 (d).
For example, it may have a rounded mountain shape.

Next, a method of inspecting the semiconductor device according to this embodiment in a wafer state will be described. FIG. 3 is a cross-sectional view for explaining the method of inspecting a semiconductor device.

As shown in the figure, the inspection apparatus is provided with a holder 21 for holding the wafer 10 and a probe terminal 23 for electrically connecting the electrode pad 12 on the wafer 10. The probe sheet 2 and the elastic body 24 provided on the probe sheet 22 and the probe terminal 2 through a terminal (not shown) in the elastic body 24 at the time of inspection.
3, an insulating substrate (inspection board) 25 on which an electrode 26 electrically connected to 3 is arranged, a probe sheet 22, and an elastic body 2
4 and a suction nozzle 27 penetrating the insulating substrate 25.

At the time of inspection, the electrode pad 1 on the wafer 10
2 and the probe terminal 23 in the probe sheet 22 facing each other, the probe sheet 22 is attached to the annular dam 13a.
A vacuum is drawn from the suction nozzle 27 while closely contacting with.
As a result, the area on the wafer 10 surrounded by the annular dam 13a is in a reduced pressure state, and the electrode pads 12 on the wafer 10 and the probe terminals 23 in the probe sheet 22 are maintained in a stable contact state. The inspection signal that flows from the element electrode 11 on the wafer 10 to the electrode 26 on the insulating substrate 25 via the probe terminal 23 and the terminal (not shown) in the elastic body 24 causes various characteristics of the semiconductor element in the wafer state. Inspect the wiring for broken wires and check for defective products.

According to this method, by depressurizing the area sealed by the annular dam 13a, it is possible to uniformly apply a pressing force between the electrode pads 12 and the probe terminals 23, which amount in the thousands to tens of thousands. At the same time, the elastic body 24 can absorb the height variation of the electrode pad 12 and the probe terminal 23 and the warp of the wafer 10 to surely bring the electrode pad 12 and the probe terminal 23 into contact with each other.

Here, in the case of this embodiment, the wafer 10 is provided with an annular dam 13a having a sealing function,
Since it is not repeatedly used many times, it is not necessary to frequently replace the seal member (member indicated by reference numeral 104 in FIG. 19) of the conventional inspection device. Also,
High temperature such as wafer burn-in test (currently 125 ° C
The deterioration of the elastic characteristics and wear of the annular dam 13a due to the above-mentioned conditions do not pose a problem. Further, since the inspection device does not require a seal member as in the conventional inspection device, it is possible to reduce the cost required for the inspection.

Further, even if the burn-in test temperature is increased in order to shorten the inspection time in the future, highly reliable inspection can be performed in the wafer state while maintaining the above-mentioned effects. A semiconductor device can be realized.

(Second Embodiment) Next, a semiconductor device according to a second embodiment, a method for manufacturing the same, and a method for inspecting the same will be described with reference to FIGS.

FIGS. 4A and 4B are a plan view and a sectional view of the semiconductor device according to the second embodiment. Figure 4
As shown in (a) and (b), on the wafer 10 made of a silicon substrate, there is a chip region Rtp which has a large number of semiconductor elements (not shown) and is then individually divided. Element electrodes 11 of a semiconductor element are arranged on the main surface. Note that, for convenience, only 12 chip regions Rtp are shown in FIG. 4A and only three chip regions Rtp are shown in FIG. 4B, but in reality, an extremely large number of chip regions Rtp are shown. Needless to say, is formed. An annular dam 13a surrounding the semiconductor element and the element electrode 11 is provided near the outer periphery of the main surface of the wafer 10. The annular dam 13a is made of an elastic (stretchable) insulating material such as silicon rubber, polyimide, or epoxy. The annular dam 13a may be formed at a position having an end face that coincides with the end face of the wafer 10, or may be formed at a position slightly inward from the end face of the wafer 10.

Here, the semiconductor device according to the present embodiment is characterized in that the low elastic modulus layer 13b as a protective layer made of the same insulating material as the annular dam 13a is provided on the wafer 10. . The low elastic modulus layer 13b is formed on the wafer 1
Is formed only in the chip area Rtp above 0, and
An opening is formed above the region where the device electrodes 11 are arranged in the low elastic modulus layer 13b. A wiring pattern 33 made of a metal film is formed over the element electrode 11 and the low elastic modulus layer 13b. This wiring pattern 33
Is the pad 30 on the device electrode 11 and the low elastic modulus layer 13b.
The land 32, which is an external electrode on the upper part, and the metal wiring 31, which connects the pad 30 and the land 32, are integrally formed.

5A to 5F are sectional views showing the method for manufacturing the semiconductor device according to the present embodiment.

First, in the step shown in FIG. 5A, a semiconductor element and an element electrode 11 of the semiconductor element are formed on the wafer 10, and a passivation film exposing a part of the element electrode 11 on the groove. (Not shown).

Next, in the step shown in FIG. 5B, the insulating material film 13 is formed by coating the entire surface of the wafer 10 with a photosensitive insulating material with a thickness of about 150 μm and drying it. .

In order to exert the sealing function at the time of inspection of the semiconductor device, the insulating material film 13 should preferably be thick so that it does not interfere with the steps after coating.
For example, it may be about 500 μm or about 1 mm.

The material having photosensitivity may be, for example, a polymer such as ester bond type polyimide or acrylate epoxy, as long as it has a low elastic modulus. Further, it is not always necessary that the insulating material is used, and a conductive film may be used.

Next, in the step shown in FIG. 5C, a dry insulating material film 13 is formed on the peripheral surface of the wafer 10 and a mask having openings in the chip regions Rtp in which the element electrodes 11 are arranged. Exposure is performed. In this case, in the present embodiment, scattered light is used for exposure instead of parallel light.

Further, in the step shown in FIG. 5D, the exposed insulating material film 13 is developed to form an annular dam 13a in the peripheral portion of the wafer 10, while each chip region Rtp is formed. The low elastic modulus layer 13b having an opening above the array region of the device electrodes 11 is formed. In the manufacturing method of the present embodiment, the scattered light is used instead of the parallel light for the exposure, so that the cross-sectional shape of the inner end of the annular dam 13a and the end of the low elastic modulus layer 13b can be changed. It is not perpendicular to the main surface but has a wedge shape with no acute angles. However, a stepped low elastic modulus layer or an annular dam may be formed without using scattered light.

Next, in the step shown in FIG. 5E, the wafer 1
Vacuum deposition method, sputtering method, CVD
Method, electroless plating method, or electric field plating method to form the metal layer 34 having a thickness of, for example, about 10 μm.

Next, as shown in FIG. 5F, the metal layer 34 is patterned by using the photolithography technique, so that the pad 30 on the device electrode 11 and the low elasticity are formed on the main surface of the wafer 10. A predetermined metal wiring pattern 33 including the land 32 on the rate layer 13b and the metal wiring 31 connecting the two is formed.

Next, a method of inspecting the semiconductor device according to this embodiment in a wafer state will be described. FIG. 6 is a cross-sectional view for explaining the method of inspecting a semiconductor device.

As shown in the figure, the inspection apparatus has a probe terminal 2 for electrically connecting a holder 21 for holding the wafer 10 and a land 32 on the wafer 10.
3 is arranged, an insulating substrate (inspection board) 25 on which electrodes 26 electrically connected to the probe terminals 23 at the time of inspection are arranged, and the probe sheet 22.
And a suction nozzle 27 penetrating the insulating substrate 25.

At the time of inspection, the probe sheet 2 with the land 32 functioning as an external electrode on the wafer 10 and the probe terminal 23 in the probe sheet 22 facing each other.
2 is closely attached to the annular dam 13a, the suction nozzle 27
Evacuate from. As a result, the area on the wafer 10 surrounded by the annular dam 13a is depressurized, and the lands 32 on the wafer 10 and the probe terminals 2 in the probe sheet 22 are formed.
And 3 are maintained in a stable contact state. Then, in this state, various characteristics of the semiconductor element and the presence or absence of disconnection of the wiring are inspected to check the existence of defective products.

According to this method, by depressurizing the area sealed by the annular dam 13a, it is possible to uniformly apply a pressing force between the lands 32 and the probe terminals 23, which are in the range of thousands to tens of thousands. The low elastic modulus layer 13b can absorb the height variation of the land 32 and the probe terminal 23 and the warp of the wafer 10 to surely bring the land 32 and the probe terminal 23 into contact with each other.

According to the semiconductor device of this embodiment, since the wafer 10 is provided with the annular dam 13a having a sealing function, the same effect as that of the first embodiment can be exhibited. That is, it is not necessary to frequently replace the seal member (member indicated by reference numeral 104 in FIG. 19) of the conventional inspection device. Further, deterioration of the elastic characteristics and wear of the annular dam 13a due to the high temperature (currently about 125 ° C.) such as the wafer burn-in test does not pose a problem. Further, even if the burn-in test temperature becomes high in order to shorten the inspection time in the future, it is possible to realize a semiconductor device capable of performing highly reliable inspection in a wafer state while maintaining the above-described effects. it can. Further, since the inspection device does not require a seal member as in the conventional inspection device, it is possible to reduce the cost required for the inspection.

In addition, in this embodiment, since the low elastic modulus layer 13b having a function of buffering the pressing force is formed on the wafer 10, the inspection device is shown in FIG. 3 in the first embodiment. Such elastic body 24 is unnecessary. Therefore, the inspection apparatus for inspecting this semiconductor device has a member on the wafer 10 (land 32 which is an external electrode) and a member on the inspection apparatus side (the electrode 26 on the insulating substrate 25) as compared with the conventional inspection apparatus. ), It is possible to further reduce the number of elements that cause a poor electrical connection state with the above), and improve the reliability of the inspection. Moreover, the low elastic modulus layer 13
Since b is made of the same material as the annular dam 13a,
The manufacturing process of the semiconductor device is simplified and the manufacturing cost is not increased. Further, since the low elastic modulus layer 13b is provided, the thermal stress on the metal wiring 31 and the like on the wafer 10 can be relaxed, so that the reliability can be improved.

Furthermore, by arranging the lands 32 in a grid pattern, for example, the land spacing can be made larger than the spacing between the pads 30, and the wiring within the test board can be easily routed and the cost increase of the test board can be avoided. can do.

(Third Embodiment) Next, FIG. 7 and FIG.
A semiconductor device and its inspection method according to the third embodiment will be described with reference to FIG.

FIGS. 7A and 7B are a plan view and a sectional view of the semiconductor device according to the third embodiment. Figure 7
In FIGS. 4A and 4B, members having the same structure as the semiconductor device of the second embodiment shown in FIGS. 4A and 4B have the same reference numerals as those in FIGS. 4A and 4B. , And the description thereof is omitted. For convenience, FIG.
Only the chip area Rtp is shown in FIG.
Although only one chip region Rtp is shown, it goes without saying that a very large number of chip regions Rtp are actually formed.

Here, the semiconductor device of this embodiment is characterized in that the protruding terminals 40 made of solder balls are provided on the lands 32 of the wiring pattern 33 in the second embodiment.
Is formed. By projecting the projecting terminals 40 to the upper side more than the low elastic modulus layer 13b, the electrical connection with the electrodes of the inspection device during the inspection of the semiconductor device is facilitated.

Next, a method of inspecting the semiconductor device according to this embodiment in a wafer state will be described. FIG. 8 is a cross-sectional view for explaining the method of inspecting a semiconductor device.

As shown in the figure, in the inspection apparatus, a holding body 21 for holding the wafer 10 and an electrode 26 electrically connected to the protruding terminal 40 on the wafer 10 at the time of inspection.
It is provided with an insulating substrate (inspection board) 25 on which is arranged, and a suction nozzle 27 penetrating the insulating substrate 25.

At the time of inspection, the protruding terminals 4 on the wafer 10
0 and the electrode 26 on the insulating substrate 25 are opposed to each other, the insulating substrate 25 is brought into close contact with the annular dam 13a, and a vacuum is drawn from the suction nozzle 27. As a result, the area on the wafer 10 surrounded by the annular dam 13a is in a reduced pressure state, and the protruding terminals 40 on the wafer 10 and the insulating substrate 25 are formed.
The inner electrode 26 is maintained in a stable contact state. Then, in this state, various characteristics of the semiconductor element and the presence or absence of disconnection of the wiring are inspected to check the existence of defective products.

According to this method, by depressurizing the area sealed by the annular dam 13a, it is possible to uniformly apply a pressing force between the protruding terminals 40 and the electrodes 26, which are in the number of thousands to tens of thousands. At the same time, the low elastic modulus layer 13b can absorb the height variations of the protruding terminals 40 and the electrodes 26 and the warp of the wafer 10 to surely bring the protruding terminals 40 and the electrodes 26 into contact with each other.

Here, in the case of this embodiment, since the wafer 10 is provided with the annular dam 13a having a sealing function, the same effect as that of the first embodiment can be exhibited. That is, the seal member (see FIG.
It is not necessary to frequently replace the member indicated by reference numeral 104 in 9). Further, deterioration of the elastic characteristics and wear of the annular dam 13a due to the high temperature (currently about 125 ° C.) such as the wafer burn-in test does not pose a problem. Further, since the inspection device does not require a seal member as in the conventional inspection device, it is possible to reduce the cost required for the inspection. Furthermore, even if the burn-in test temperature is increased in order to shorten the inspection time in the future, a semiconductor device capable of performing highly reliable inspection in a wafer state while maintaining the above-described effects. Can be realized.

In addition, in this embodiment, since the low elastic modulus layer 13b having a buffering function is formed on the wafer 10, the same effect as that of the second embodiment can be exhibited. That is, since the inspection device does not require the elastic body 24 as shown in FIG. 3 in the first embodiment, it is possible to surely reduce the elements that make the circuit connection state defective in the inspection device. , The reliability of inspection can be increased. Moreover, since the low elastic modulus layer 13b is made of the same material as the annular dam 13a, the manufacturing process of the semiconductor device is simplified and the manufacturing cost is not increased. Further, since the low elastic modulus layer 13b is provided, the wafer 1
Since the thermal stress on the metal wiring 31 and the like on 0 can be relaxed, the reliability can be improved.

Further, in this embodiment, the wiring pattern 3
By providing the protruding terminal 40 on the land 32 of No. 3, the probe sheet 22 and the probe terminal 23 in the inspection device shown in FIGS. 3 and 6 are unnecessary. Therefore,
The structure of the inspection device becomes simpler and not only the inspection cost is reduced, but also the elements that make the connection state of the circuit in the inspection device defective can be reduced more surely, and the reliability of the inspection is greatly improved. be able to. Moreover, since the thermal expansion coefficients of the insulating substrate 25 and the wafer 10 do not change so much, the semiconductor device can be inspected by freely changing the temperature without special measures for compensating for the temperature coefficient difference. It is possible.

Further, in this embodiment, the insulating substrate 25 is used.
The inspection board constituted by (1) may be made of the same material as the wafer 10. In that case, since the thermal expansion coefficients of the inspection board and the wafer are exactly the same, the reliability of electrical connection between the member on the wafer side and the member on the inspection board side can be remarkably effective.

As the protruding terminal in this embodiment, a metal ball such as the solder ball described above, a metal-plated ball, an Au bump, a stud bump, or the like can be used.

(Fourth Embodiment) Next, FIG. 9 and FIG.
The semiconductor device and the inspection method thereof according to the fourth embodiment will be described with reference to FIG.

9A and 9B are a plan view and a sectional view of the semiconductor device according to the fourth embodiment. Figure 9
7 (a) and 7 (b), members having the same structure as the semiconductor device of the third embodiment shown in FIGS. 7 (a) and 7 (b) have the same reference numerals as those in FIGS. 7 (a) and 7 (b). , And the description thereof is omitted. For convenience, FIG.
Only the chip area Rtp is shown in FIG.
Although only one chip region Rtp is shown, it goes without saying that a very large number of chip regions Rtp are actually formed.

Here, the semiconductor device of this embodiment is characterized in that in the same structure as the semiconductor device of the third embodiment, a part of the annular dam 13a, that is, the wafer 1 is formed.
The point is that the notch 13c is provided in a portion located above the orientation flat portion of 0. By providing the notch 13c in this way, the structure for reducing the pressure inside the annular dam 13a is facilitated.

Next, a method of inspecting the semiconductor device according to this embodiment in a wafer state will be described. FIG. 10 is a sectional view for explaining the method for inspecting a semiconductor device.

The inspection method according to this embodiment is almost the same as the inspection method according to the third embodiment shown in FIG. 8, and in FIG. 10, it has the same structure as that of the inspection apparatus according to the third embodiment shown in FIG. The members having the same reference numerals as those in FIG.

The feature of the inspection method of the present embodiment is that the suction nozzle 27 is inserted into the annular dam 13a from the notch 13c of the annular dam 13a, not through the insulating substrate 25. . That is, at the time of inspection, the protruding terminals 40 on the wafer 10 and the electrodes 2 on the insulating substrate 25 are
In a state in which the insulating substrate 25 is in close contact with the annular dam 13a in a state of facing 6 and the tip of the suction nozzle 27 is inserted from the cutout portion 13c of the annular dam 13a to the inside of the annular dam 13a. A vacuum is drawn from the suction nozzle 27. As a result, the area on the wafer 10 surrounded by the annular dam 13a is in a reduced pressure state, and the protruding terminals 4 on the wafer 10 are formed.
0 and the electrode 26 in the insulating substrate 25 are maintained in a stable contact state. Then, in this state, various characteristics of the semiconductor element and the presence or absence of disconnection of the wiring are inspected to check the existence of defective products.

According to the semiconductor device of this embodiment, the same effect as that of the third embodiment can be exhibited. However, the structure in which the notch 13c is provided in the annular dam 13a in the present embodiment can be applied to the semiconductor devices of the first and second embodiments, and in that case, the first and second
It is possible to exert the same effect as that of the above embodiment. By providing the cutout portion 13c in a part of the annular dam 13a, it is not necessary to adopt a structure in which the suction nozzle 27 penetrates the insulating substrate 25, the elastic body 24, the probe sheet 22 and the like, and the configuration of the inspection device is provided. Is simplified. Then, it becomes easy to reduce the pressure in the area within the annular dam 13a via the suction nozzle 27.

The cutout portion 13c of the annular dam 13a
It is preferable that the shape has a wider opening toward the outside of the wafer. The opening diameter of the cutout portion 13c outside the wafer is larger than the outer shape of the suction nozzle 27, and
It is preferable that the opening diameter of the notch portion 13c inside the wafer is equal to or smaller than that of the suction nozzle 27 and is such that the notch portion 13c comes into close contact with the suction nozzle 27 during suction.

(Modifications of First to Fourth Embodiments) Next, modifications that can be commonly applied to the first to fourth embodiments will be described with reference to FIGS. 11 to 16. 11 to 16, the electrode pads, the low elastic modulus layer, the wiring pattern, the protruding terminals, etc. on the wafer 10 are not shown, but members other than the members according to the modified embodiment are the same as those shown in FIG. 4, the structure shown in FIG. 7, FIG. 9, etc. is assumed.

-First Modification-First, a first modification of the annular dam having a mountain-shaped vertical section will be described with reference to FIGS. 11 (a) to 11 (c).

FIG. 11A is a sectional view of a semiconductor device having an annular dam 13a consisting of a single annular protrusion. 11B and 11C are cross-sectional views of a semiconductor device having an annular dam 13a composed of two annular protrusions 13a1 and 13a2, and FIG. 11B is a sectional view of the two annular protrusions 13a1 and 13a2. When overlapping, FIG.11 (c) shows the case where two annular convex parts 13a1 and 13a2 are mutually separated, respectively. However, three or more annular protrusions may be provided.

In particular, when the annular dam 13a has a structure composed of a plurality of rows of annular convex portions, the sealing function of the annular dam 13a can be further enhanced, and the electrical connection between the member on the wafer and the member on the inspection device side can be improved. The stable connection state can be further stabilized.

-Second Modification-Next, a second modification of the annular dam having the inclined surface inclined downward to the inner side of the wafer in the vertical section will be described with reference to FIGS. ) Will be described.

FIG. 12A is a sectional view of a semiconductor device having an annular dam 13a composed of a single annular protrusion. 12B and 12C are cross-sectional views of a semiconductor device having an annular dam 13a composed of two annular convex portions 13a1 and 13a2, and FIG. 12B is a sectional view of the two annular convex portions 13a1 and 13a2. When overlapping, FIG.12 (c) shows the case where two annular convex parts 13a1 and 13a2 are mutually separated, respectively. However, three or more annular protrusions may be provided.

In particular, when the annular dam 13a has a structure composed of a plurality of rows of annular convex portions, the same effect as that of the first modification can be exhibited. Further, the sealing function can be further enhanced by providing the annular dam 13a having a slanted surface that is inclined inward so that the height becomes lower toward the inside of the wafer in the vertical cross section. The electrical connection state with the member can be further stabilized.

-Third Modification- Next, the present invention relates to an annular dam having a plurality of annular protrusions and formed so that the height of the upper end of each annular protrusion decreases toward the inside of the wafer. Regarding the third modification,
This will be described with reference to FIGS. 13 (a) to 13 (c).

FIG. 13 (a) shows an annular dam 13 consisting of two annular convex portions 13a1 and 13a2 having a mountain-shaped vertical sectional shape.
It is sectional drawing of the semiconductor device which has a. FIG. 13 (b),
FIG. 13C is a cross-sectional view of a semiconductor device having an annular dam 13a composed of three annular protrusions 13a1, 13a2, 13a3 each having an inwardly inclined slope, and FIG. 13B shows three annular protrusions 13a1. , 13a2, 13a3 overlap each other, FIG. 13 (c) shows three annular protrusions 13a1, 13a2,
13a3 is shown separately from each other.

In particular, the annular dam 13a is formed of a plurality of rows of annular convex portions, and the height of the upper end of each annular convex portion is lowered toward the inside of the wafer 10. You can enhance the sealing function,
The electrical connection between the member on the wafer and the member on the inspection device side can be further stabilized.

-Fourth Modification- Next, a semiconductor device in which a low elastic modulus layer is provided and the height of the low elastic modulus layer is made lower than the height of the annular dam is the fourth embodiment.
A modified form of is described.

FIG. 14 is a sectional view showing the structure of a semiconductor device according to this modification. As shown in the figure, in this modification, a low elastic modulus layer 13b made of the same insulating material as that of the annular dam 13a is provided on the wafer 10, and the low elastic modulus layer 13b is formed. The height is lower than the height of the circular dam 13a. However, this modification is the second
Needless to say, it can be applied only to the fourth embodiment.

By making the annular dam 13a higher than the low elastic modulus layer 13b in this way, there is an advantage that the degree of pressure reduction in the inner region of the annular dam 13a can be increased during inspection.

-Fifth Modification- Next, a fifth embodiment relating to an annular dam having a recess formed at the upper end thereof.
The modified embodiment will be described with reference to FIGS. 15 (a) and 15 (b).

FIG. 15A is a sectional view of a semiconductor device having an annular dam 13a consisting of a single annular convex portion having a concave portion 13d. FIG. 15B shows recesses 13d1 and 13d, respectively.
It is sectional drawing of the semiconductor device which has the annular dam 13a which consists of two annular convex parts 13a1 and 13a2 which have d2, and shows the case where two annular convex parts 13a1 and 13a2 are mutually distant. However, three or more annular protrusions may be provided.

By providing a recess at the upper end of the annular dam as in this modification, the recess exhibits a suction cup function when the annular dam comes into close contact with the probe sheet or the insulating substrate during inspection. It is possible to prevent the displacement of the probe sheet and the insulating substrate after the close contact.

-Sixth Modification- Next, a sixth modification of the annular dam covering the conductor layer will be described with reference to FIGS. 16 (a) and 16 (b).

In FIG. 16 (a), the portion other than the outer end surface of the annular dam 13a having an inclined surface inclined inward is formed into the conductor layer 3.
5 is a cross-sectional view of a semiconductor device having a structure covered with 5.
FIG. 16B is a cross-sectional view of a semiconductor device having a structure in which the entire surface of the annular dam 13a having an inwardly inclined slope is covered with the conductor layer 35. However, two or more annular protrusions may be provided.

Such a conductor layer 35 has, for example, the above-mentioned first layer.
1 can be easily formed using the same metal film as that of the electrode pad 12 shown in FIG. 1 in the second embodiment and the wiring pattern in the second embodiment.

As in this modification, by covering the annular dam 13a with the conductor layer 35, the conductor layer 35 on the annular dam 13a and the power supply or ground of the plurality of semiconductor elements are electrically connected on the wafer 10. Since they can be connected and can be used collectively as a power source or a ground when testing a plurality of semiconductor elements, the number of power terminals or ground terminals on the inspection device side can be significantly reduced. That is, if the conductor layer 35 is electrically connected to the ground (or power supply terminal) of the semiconductor element by taking measures such as wiring around the scribe line, a common ground (or power supply) at the time of inspection. Can be used as

(Other Embodiments) In the method of manufacturing the semiconductor device according to the first embodiment, as shown in FIG.
Although the insulating material film 13 is formed on the wafer 10 and the insulating material film 13 is patterned to form the annular dam 13a by the procedure shown in FIGS. 1A to 1D, the annular dam 13a in the present invention is formed. The method is not limited to such an embodiment.

For example, as shown in FIG. 17, a sheet-like insulating material film 13x having elasticity is previously formed,
The insulating material film 13x may be adhered to the outer peripheral portion of the wafer 10 with an adhesive 16 (sheet material or glue material). At this time, the insulating material film 13x and the adhesive 16
And may be pre-bonded. Furthermore, the insulating material film 13x may be formed in advance into a sheet shape with a thermosetting material, and may be fixed on the wafer by thermocompression bonding without an adhesive.

In the method of manufacturing the semiconductor device according to the second embodiment, the annular dam 13a and the low elastic modulus layer 13b, and the wiring pattern 33 on the dam are formed by the procedure shown in FIGS. However, the structure of the semiconductor device of the present invention is not limited to the structure of this embodiment.

For example, as shown in FIGS. 18A and 18B, the insulating material film 13x is formed on the wafer 10 by the adhesive 1
6, the annular dam 13a and the low elastic modulus layer 13b are adhered to each other, and a flexible sheet wiring circuit sheet 37 in which wiring and external electrodes are further formed on the insulating material film 13x, and this wiring You may make it adhere | attach the partial lead 38 connected to the circuit sheet 37. that time,
The partial lead 38 is connected to the electrode pad 12 on the wafer 10. Through these steps, external electrodes (not shown) are formed on the low elastic modulus layer 13b via the wiring circuit sheet 37.
It is also possible to form a semiconductor device provided with, and it is possible to perform an inspection in a wafer state as in the above-described embodiments.

Further, even when the land 32 to be the external electrode is provided on the low elastic modulus layer 13b as in the second embodiment, the land 32 is formed integrally with the metal wiring and the pad. It is not necessary to form the wiring pattern 33. In short, the external electrodes on the low elastic modulus layer 13b may be electrically connected by wire bonding, bump connection, ILB, plating or the like, and any connecting method may be used. .

In the second to fourth embodiments, a film made of a flexible material such as a polyimide tape may be interposed between the land 32 which will be the external electrode and the low elastic modulus layer 13b. And

It is desirable to closely contact with.

[0118]

According to the semiconductor device of the present invention, since the annular dam made of the elastic material surrounding the semiconductor element and the terminals connected to the semiconductor device is provided on the main surface of the wafer, the wafer on the wafer side is inspected during the inspection of the semiconductor device. It is possible to seal the contact area between the terminal and the terminal on the inspection device side, and it is possible to provide a semiconductor device that enables highly reliable inspection and is low in total cost.

In the semiconductor device described above, a protective layer made of the same material as the annular dam and an external electrode on the protective layer are further provided so that the protective layer absorbs the warp of the wafer and the variation in the height of the terminals. The connection state between the terminal on the wafer side and the terminal of the inspection device can be stabilized, and the reliability of the inspection can be improved and the cost of the inspection device can be reduced.

Furthermore, by providing a protruding terminal such as a metal ball on the external electrode, a probe terminal and a sheet for holding the probe terminal are not required, so that the reliability of the inspection is improved and the cost of the inspection apparatus is reduced. Can be achieved.

Further, according to the method of manufacturing a semiconductor device of the present invention, it is possible to provide a method of manufacturing a semiconductor device that easily manufactures the semiconductor device.

[Brief description of drawings]

FIG. 1 is a plan view and a cross-sectional view of a semiconductor device according to a first embodiment in which an annular dam is provided on a wafer.

FIG. 2 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the first embodiment.

FIG. 3 is a cross-sectional view showing a method of inspecting the semiconductor device according to the first embodiment in a wafer state.

FIG. 4 is a plan view and a cross-sectional view of a semiconductor device according to a second embodiment in which an annular dam, a low elastic modulus layer and a wiring pattern are provided on a wafer.

FIG. 5 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the second embodiment.

FIG. 6 is a cross-sectional view showing a method for inspecting a semiconductor device in a wafer state according to a second embodiment.

7A and 7B are a plan view and a sectional view of a semiconductor device according to a third embodiment in which an annular dam, a low elastic modulus layer, a wiring pattern, and protruding terminals are provided on a wafer.

FIG. 8 is a cross-sectional view showing a method for inspecting a semiconductor device in a wafer state according to a third embodiment.

9A and 9B are a plan view and a cross-sectional view of a semiconductor device according to a fourth embodiment in which an annular dam is provided with a cutout portion.

FIG. 10 is a cross-sectional view showing a method of inspecting a semiconductor device in a wafer state according to a fourth embodiment.

FIG. 11 is a cross-sectional view showing a first variation of the first to fourth embodiments and showing various variations of the structure of the annular dam having a mountain-shaped vertical cross-sectional shape.

FIG. 12 is a cross-sectional view showing a second variation of the first to fourth embodiments and showing various variations of the structure of the annular dam having the inwardly inclined slope.

FIG. 13 is a cross-sectional view showing a third variation of the first to fourth embodiments and showing various variations of the structure of an annular dam having a plurality of annular convex portions having different heights.

FIG. 14 is a cross-sectional view of a semiconductor device, which is a fourth modification of the second to fourth embodiments and has an annular dam higher than the low elastic modulus layer.

FIG. 15 is a cross-sectional view showing a fifth variation of the first to fourth embodiments, showing various variations of the structure of an annular dam having a recess formed in the upper end portion.

FIG. 16 is a cross-sectional view showing a sixth variation of the first to fourth embodiments, showing various variations of a semiconductor device having an annular dam covered with a conductor layer.

FIG. 17 is a cross-sectional view of a semiconductor device according to another embodiment in which an annular dam is formed by adhering sheets.

FIG. 18 is a cross-sectional view of a semiconductor device according to another embodiment in which an annular dam is formed by bonding sheets, and a wiring circuit sheet and partial leads are provided.

FIG. 19 is a cross-sectional view showing a method for inspecting a conventional semiconductor device in a wafer state.

[Explanation of symbols]

10 wafers 11 electrodes 12 electrode pads 13 Insulating material film 13a Ring dam 13b low elastic modulus layer 13x insulating material film 16 Adhesive 21 Holder 22 Probe sheet 23 Probe terminal 24 Elastic body 25 Insulating board (inspection board) 26 electrodes 27 Suction nozzle 30 pads 31 metal wiring 32 lands (external electrode) 33 wiring pattern 34 Metal layer 35 conductor layer 40 protruding terminal Rtp chip area

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshifumi Nakamura 1-1, Sachimachi, Takatsuki-shi, Osaka Matsushita Electronics Industrial Co., Ltd. (56) Reference JP-A-9-64049 (JP, A) JP-A 50-105270 (JP, A) JP-A-53-68567 (JP, A) JP-A-9-186206 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/60 H01L 21/66 H01L 23/12

Claims (13)

(57) [Claims] 1. A wafer having a plurality of semiconductor elements, a plurality of element electrodes arranged on a main surface of the wafer and electrically connected to the plurality of semiconductor elements, a plurality of the semiconductor elements and a plurality of the plurality of semiconductor elements. It is the formed on the main surface of the wafer to surround the device electrodes surrounding area
A semiconductor device, comprising: an annular dam made of an elastic material , which exhibits a sealing function when the pressure is reduced . 2. The semiconductor device according to claim 1, wherein an elastic insulating material is formed on the plurality of semiconductor elements on the main surface of the wafer and has an opening above the plurality of element electrodes. And a plurality of external electrodes formed on the protective layer and electrically connected to the plurality of element electrodes, respectively, the elastic material forming the annular dam and the protective layer being formed. A semiconductor device characterized in that it is the same material as the elastic insulating material. 3. The semiconductor device according to claim 2, further comprising a protruding terminal formed on the plurality of external electrodes. 4. The semiconductor device according to claim 2, wherein the upper end of the annular dam is higher than the upper end of the protective layer. 5. The semiconductor device according to claim 1, wherein a cutout is formed in a part of the annular dam. 6. The semiconductor device according to claim 1, wherein the annular dam has a plurality of rows of annular protrusions along the outer periphery of the wafer. . 7. The semiconductor device according to claim 1, wherein the annular dam has a vertical cross-sectional shape that is inclined downward toward the inside of the wafer. Semiconductor device. 8. The semiconductor device according to claim 6, wherein the upper end of each annular projection of the annular dam is lower toward the inside of the wafer. 9. The semiconductor device according to claim 1, wherein a recess is formed in an upper end portion of the annular dam. 10. The semiconductor device according to claim 1, further comprising a conductor layer that covers at least a part of a surface of the annular dam. 11. A first step of forming a plurality of semiconductor elements on a wafer, and a second step of forming a plurality of element electrodes respectively connected to the semiconductor elements on a main surface of the wafer, On the main surface of the wafer, the plurality of semiconductor elements and the plurality of element electrodes are arranged so as to surround the plurality of semiconductor elements and the plurality of element electrodes.
And a third step of forming an annular dam made of an elastic material , which exhibits a sealing function when the inside of the region is in a reduced pressure state . 12. The method of manufacturing a semiconductor device according to claim 11, wherein in the third step, an insulating material is used as the elastic material, and an opening is formed above the plurality of element electrodes on the main surface of the wafer. A method of manufacturing a semiconductor device, wherein the protective layer is formed together with the annular dam. 13. The method according to any one of claims 1 to 10.
A method of inspecting a semiconductor device as described above, wherein the characteristics of the electrode pad on the wafer and the semiconductor element are
And the terminal for performing the
The first step of arranging so that it can be connected to the wafer and sealing the area on the wafer surrounded by the annular dam.
In the second step, the area on the wafer surrounded by the annular dam is evacuated.
And a third step of reducing the pressure to a reduced pressure state.
Method for inspecting semiconductor device.