JP3498190B2 - Manufacturing method of thin film laminated electrode - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film laminated electrode used in manufacturing a multilayer thin film device such as a microwave / millimeter wave device.

[0002]

2. Description of the Related Art In recent years, in a microwave / millimeter-wave device, in order to avoid a decrease in Q value due to a large conductor loss due to a skin effect at high frequencies, a device such as that in the microstrip line shown in FIG. A thin film laminated electrode structure has been adopted. That is, a microstrip line which is an example of this type of device has a thin film laminated electrode in which a conductor pattern 2 is laminated on a surface of a dielectric substrate 1 with a dielectric pattern 3 interposed therebetween. electrode pattern 4 is being prepared has become common in accordance with the method of forming the thin film laminated electrode as shown in FIG. 10.

In manufacturing this microstrip line, first, as shown in FIG. 10A, a conductor thin film 5 made of Cu or the like and SiO ₂ or the like are formed on the surface of the dielectric substrate 1 of the sapphire R surface. And the dielectric thin films 6 are alternately laminated, and a mask pattern 7 made of a photoresist (photosensitive resin) having a shape corresponding to the conductor pattern 2 is formed on the surface of the conductor thin film 5 located at the top. . Next, while patterning each of the conductor thin film 5 and the dielectric thin film 6 alternately by one layer by etching through the mask pattern 7, FIG.
As shown in (3), if all the conductor thin films 5 and the dielectric thin films 6 are patterned, the electrode patterns 4 including the conductor patterns 2 and the dielectric patterns 3 that are alternately laminated are formed.

[0004]

However, in the thin film laminated electrode thus formed, the conductor pattern 2 is used.
They are adjacent to each other with the dielectric pattern 3 having almost no thickness interposed therebetween, so that the end portions of the conductor pattern 2 exposed on the end surface 4a of the electrode pattern 4 may be short-circuited to each other. However, the characteristics as designed cannot be obtained and the yield is very poor.

[0005] The present invention, which has been made in view of such non convenience, aims at the ends with each other of the conductive thin film to improve the yield by preventing a short circuit each other.

[0006]

In order to achieve the above object, the first invention of the present invention is to form an electrode pattern in which conductor thin films and dielectric thin films are alternately laminated on the surface of a dielectric substrate. After that, the conductive thin film exposed on the end face of the electrode pattern is selectively etched.

According to a second aspect of the present invention, an electrode pattern formed by alternately laminating conductor thin films and dielectric thin films is formed on the surface of a dielectric substrate, and then the conductor thin film exposed on the end face of the electrode pattern is formed. It is characterized by implanting at least one ion selected from oxygen, nitrogen, and carbon.

According to a third aspect of the present invention , after forming an electrode pattern in which conductor thin films and dielectric thin films are alternately laminated on the surface of a dielectric substrate, the end face of the electrode pattern is made of an inorganic dielectric material or an organic material. It is characterized by covering with a protective film made of a dielectric material. The present invention also relates to a dielectric substrate
Conductive thin film and dielectric thin film are alternately laminated on a part of the surface of
After forming the electrode pattern formed by
Selectively etch the conductive thin film exposed on the end face of
It is characterized by that. The present invention also provides a dielectric substrate
Conductive thin film and dielectric thin film are alternately stacked on a part of the plate surface.
After forming the layered electrode pattern, the electrode pattern is formed.
The end face of the resin from an inorganic or organic dielectric
It is characterized in that it is covered with a protective film.

[0009]

According to the first aspect of the present invention, by selectively etching the conductor thin film exposed on the end face of the electrode pattern, the end of the conductor thin film is retracted to a position recessed from the end face of the electrode pattern, and It will not be exposed on the end face of the pattern.

According to the second aspect of the invention, the end portion of the conductive thin film exposed on the end surface of the electrode pattern is made into an insulator by implanting at least one ion of oxygen, nitrogen and carbon. It will be.

According to the third aspect of the invention, since the end surface of the electrode pattern is covered with the protective film made of the inorganic dielectric material or the organic dielectric material, the end portion of the conductor thin film exposed on the end surface of the electrode pattern is covered. These dielectric protective films are interposed between them.

[0012]

Embodiments of the method of the present invention will be described below with reference to the drawings.

First Embodiment FIG. 1 is a partially cutaway perspective view showing a simplified structure of a main part of a microstrip line according to this embodiment, and FIG. 2 is a method for manufacturing a microstrip line pattern according to this embodiment. It is sectional drawing which respectively shows.

A microstrip line, which is an example of a microwave / millimeter wave device manufactured by the method of this embodiment, has a conductor pattern 2 and a dielectric pattern 3 on a surface of a dielectric substrate 1 made of a sapphire R surface. It has a structure including an electrode pattern 4 which is formed by alternately stacking, and is basically the same as the conventional example, but the conductor pattern 2 is not exposed on the end surface 4a of the electrode pattern 4. Has structural features.

[0015] Next, the manufacturing process of the micro-strip line. First, for example, a dielectric substrate 1 having a sapphire R surface is prepared, and then a cleaning process is performed on the dielectric substrate 1.

The conductor thin film 5 made of Cu is formed on the surface of the dielectric substrate 1 by repeating the sputtering process while adjusting the film thickness to about 1 μm.
And a dielectric thin film 6 made of SiO ₂ are alternately deposited and laminated. The film forming process at this time is performed under the conditions shown in Table 1.

[0017]

[Table 1]

Next, a mask material made of a negative resist material (in the case of wet etching) or photosensitive polyimide (in the case of dry etching) is applied on the surface of the conductor thin film 5 located at the top, and the applied mask film. To form a mask pattern 7 having a desired shape corresponding to the electrode pattern 4 (see FIG. 2).
(See (a)). Then, subsequently, the mask pattern 7
The conductor thin film 5 and the dielectric thin film 6 are etched from above. The etching process at this time is shown in Table 2.
The wet etching under the conditions shown in or the dry etching shown in Table 3 may be used.

[0019]

[Table 2]

[0020]

[Table 3]

As a result, the patterning is performed by this etching. As a result, the conductor thin film 5 and the dielectric thin film 6 which have been subjected to the etching process through the mask pattern 7 are patterned in order from the uppermost one. Thus, all of the conductor thin film 5 and the dielectric thin film 6 are continuously and collectively patterned to form the electrode pattern 4 including the conductor pattern 2 and the dielectric pattern 3 which are alternately laminated ( Figure 2 (b)
reference).

After forming the electrode pattern 4, only the conductor thin film 5 exposed on the end surface 4a of the electrode pattern 4 is selectively etched. That is, the microstrip line with the mask pattern 7 left is immersed in the ferric chloride aqueous solution E under the conditions shown in Table 2 as in the wet etching process of the conductor pattern 2 when forming the electrode pattern 4 described above. Then, the end surface 4 of the electrode pattern 4
Only the end of the conductor pattern 2 exposed at a is the second chloride.
It will be corroded by the iron aqueous solution E (see FIG. 2C). Therefore, as a result of the conductor pattern 2 retreating from the end surface 4a of the electrode pattern 4 to a recessed position and not being exposed to the electrode pattern end surface 4a, the end surface 4 of the electrode pattern 4 is removed.
At a, the conductor patterns 2 (conductor thin film 5) are not short-circuited with each other.

After the end face treatment of the conductor pattern 2 is performed, the mask pattern 7 is removed, and further, the microstrip line is diced and inspected to complete the microstrip line shown in FIG. .

Second Embodiment FIG. 3 is a partially cutaway perspective view showing a simplified structure of a main part of a microstrip line according to this embodiment, and FIG. 4 shows a method of manufacturing a pattern of this microstrip line. FIG.

A microstrip line, which is an example of a microwave / millimeter wave device manufactured by the method of this embodiment, has a conductor pattern 2 and a dielectric pattern 3 on a surface of a dielectric substrate 1 made of a sapphire R surface. It has a structure including an electrode pattern 4 constituted by alternately laminating the electrode patterns, and is basically the same as that of the conventional example, but similar to the first embodiment, a conductor pattern is formed on the end face 4a of the electrode pattern 4. Two
There is a structural feature that is not exposed.

[0026] Next, the manufacturing process of the micro-strip line. First, for example, a dielectric substrate 1 having a sapphire R surface is prepared, and then a cleaning process is performed on the dielectric substrate 1.

The conductor thin film 5 made of Cu is formed on the surface of the dielectric substrate 1 by repeating the sputtering process while adjusting the film thickness to about 1 μm.
And a dielectric thin film 6 made of SiO ₂ are alternately deposited and laminated. This deposition process is exactly the same as in the first embodiment.

Further, as in the first embodiment, a mask pattern 7 made of a negative resist material (in the case of wet etching) or photosensitive polyimide (in the case of dry etching) is formed on the surface of the conductor thin film 5 located at the top. After being formed (see FIG. 4A), the conductor thin film 5 and the dielectric thin film 6 are subsequently etched from above the mask pattern 7 to form conductor patterns 2 that are alternately laminated.
Then, the electrode pattern 4 including the dielectric pattern 3 is formed (see FIG. 4B).

After forming the electrode pattern 4, the conductor thin film exposed on the end surface 4a of the electrode pattern 4 is selectively sputter-etched. That is, the microstrip line with the mask pattern 7 remaining is similar to the above-described sputter etching treatment of the conductor pattern 2 when the electrode pattern 4 is formed (see Table 3) and only the ion incident angle is set to 45 degrees. The sputter etching process is performed by irradiating the ion beam G of the inert gas under the changed conditions.

When such sputter etching is performed,
Since the sputtering rate of the metal material (the conductor thin film 5 made of copper) is about 2 to 10 times higher than that of the dielectric material (the dielectric thin film 6 made of SiO ₂ ), it is exposed on the end surface 4 a of the electrode pattern 4. Only the end portion of the conductor pattern 2 present is corroded by the ion beam G of the inert gas (FIG. 4).
(See (c)). Therefore, as a result of the conductor pattern 2 retreating from the end face 4a of the electrode pattern 4 to a deep position and not being exposed at the end face 4a of the electrode pattern 4, the conductor patterns 2 (conductor thin film 5) are not mutually exposed on the end face 4a of the electrode pattern 4. It will never short circuit to.

After such end treatment of the conductor pattern 2 is performed, the mask pattern 7 is removed, and further, the microstrip line is diced and inspected, and the microstrip line shown in FIG. 3 is completed. To do.

Third Embodiment FIG. 5 is a partially cutaway perspective view showing a simplified structure of a main part of a microstrip line according to this embodiment, and FIG. 6 is a sectional view showing a method for manufacturing a microstrip line. It is a figure.

A microstrip line, which is an example of a microwave / millimeter wave device manufactured by the method of this embodiment, has a conductor pattern 2 and a dielectric pattern 3 on a surface of a dielectric substrate 1 made of a sapphire R surface. It has a structure including an electrode pattern 4 formed by alternately laminating the electrodes, and is basically the same as that of the conventional example, but the end of the conductor pattern 2 exposed on the end surface 4a of the electrode pattern 4. The structural feature is that the oxide 2a (copper oxide), which is an insulator, is formed in the portion.

[0034] Next, the manufacturing process of the micro-strip line. First, for example, a dielectric substrate 1 having a sapphire R surface is prepared, and then a cleaning process is performed on the dielectric substrate 1.

The conductor thin film 5 made of Cu is formed on the surface of the dielectric substrate 1 by repeatedly performing the sputtering process while adjusting the film thickness to about 1 μm.
And a dielectric thin film 6 made of SiO ₂ are alternately deposited and laminated. This deposition process is exactly the same as in the first embodiment.

Further, as in the first embodiment, a mask pattern 7 made of a negative resist material (in the case of wet etching) or photosensitive polyimide (in the case of dry etching) is formed on the surface of the conductor thin film 5 located at the top. After forming (see FIG. 6A), the conductor thin film 5 and the dielectric thin film 6 are subsequently etched from above the mask pattern 7 to form conductor patterns 2 and dielectric patterns that are alternately laminated. An electrode pattern 4 composed of 3 is formed (see FIG. 6B).

[0037] After forming the electrode patterns 4, in order to oxidize the end portion of the conductor pattern 2 exposed in the end face 4a of the electrode patterns 4, oxygen ions F to the end surface 4a of the electrode pattern 4 under the conditions shown in Table 4 Inject. (See FIG. 6 (c)).

[0038]

[Table 4]

Then, after such implantation of the oxide ions F is performed, an annealing treatment is performed at 400 ° C.
An oxide (copper oxide) 2a having a width of several μm is formed on the end of the conductor pattern 2 exposed on the end surface 4a of the electrode pattern 4. Therefore, the conductor pattern 2 has oxide 2 at its end.
As a result, the conductor pattern 2 (conductor thin film 5) is not exposed to the end face 4a of the electrode pattern 4 as a result of not being short-circuited to each other at the end face 4a of the electrode pattern 4.

After the end portion treatment of the conductor pattern 2 is performed, the mask pattern 7 is removed, and the microstrip line is diced and inspected, and the microstrip line shown in FIG. Is completed.

By the way, in this embodiment, oxygen ions F
Although the end of the conductor pattern 2 was made into an insulator by injecting, the same effect can be obtained by injecting nitrogen ions or carbon ions to make the end of the conductor pattern 2 into an insulator. To be

Fourth Embodiment FIG. 7 is a sectional view showing a method of manufacturing a microstrip line according to this embodiment.

A microstrip line, which is an example of a microwave / millimeter wave device manufactured by the method of this embodiment, has a conductor pattern 2 and a dielectric pattern 3 on a surface of a dielectric substrate 1 made of a sapphire R surface. It has a structure including the electrode patterns 4 alternately stacked, and is basically the same as the conventional example, but the entire surface side of the microstrip line including the end surface 4a of the electrode pattern 4 is , Is characterized in that it is covered with the protective film 10 made of SiO ₂ .

[0044] Next, the manufacturing process of the micro-strip line. First, for example, a dielectric substrate 1 having a sapphire R surface is prepared, and then a cleaning process is performed on the dielectric substrate 1.

The conductor thin film 5 made of Cu is formed on the surface of the dielectric substrate 1 by repeatedly performing the sputtering process while adjusting the film thickness to about 1 μm.
And a dielectric thin film 6 made of SiO ₂ are alternately deposited and laminated. This deposition process is exactly the same as in the first embodiment.

Further, as in the first embodiment, a mask pattern 7 made of a negative resist material (in the case of wet etching) or photosensitive polyimide (in the case of dry etching) is formed on the surface of the conductor thin film 5 located at the top. After forming (see FIG. 7A), the conductor thin film 5 and the dielectric thin film 6 are subsequently subjected to an etching process from above the mask pattern 7 to alternately form the conductor pattern 2 and the dielectric pattern. An electrode pattern 4 composed of 3 is formed (see FIG. 7B).

After forming the electrode pattern 4, the mask pattern 7 is removed. Then, on the surface side of the mask strip line from which the mask pattern 7 is removed, under the conditions of Table 5,
A protective film 10 made of SiO ₂ is formed to a film thickness (1 μm) (see FIG. 7C).

[0048]

[Table 5]

Therefore, the end portions of the conductor pattern 2 are covered with the protective film 10 and are not exposed, and the conductor patterns 2 (conductor thin film 5) are not short-circuited to each other at the end surface 4a of the electrode pattern 4.

After forming the protective film 10, dicing is performed for each microstrip line and then inspection is performed to complete the microstrip line.

Fifth Embodiment FIG. 8 is a sectional view showing a method for manufacturing a microstrip line according to this embodiment.

A microstrip line, which is an example of a microwave / millimeter wave device manufactured by the method of this embodiment, has a conductor pattern 2 and a dielectric pattern 3 on a surface of a dielectric substrate 1 made of a sapphire R surface. It has a structure including the electrode patterns 4 alternately stacked, and is basically the same as the conventional example, but the entire surface side of the microstrip line including the end surface 4a of the electrode pattern 4 is The structure is characterized in that it is covered with the protective film 11 made of a polyimide thin film.

[0053] In the following, the manufacturing process of the micro-strip line. First, for example, a dielectric substrate 1 having a sapphire R surface is prepared, and then a cleaning process is performed on the dielectric substrate 1.

The conductor thin film 5 made of Cu is formed on the surface of the dielectric substrate 1 by repeating the sputtering process while adjusting the film thickness to about 1 μm.
And a dielectric thin film 6 made of SiO ₂ are alternately deposited and laminated. This deposition process is exactly the same as in the first embodiment.

Further, as in the first embodiment, a mask pattern 7 made of a negative resist material (in the case of wet etching) or photosensitive polyimide (in the case of dry etching) is formed on the surface of the conductor thin film 5 located at the top. After formation (see FIG. 8A), the conductor thin film 5 and the dielectric thin film 6 are subsequently etched from above the mask pattern 7 to form conductor patterns 2 and dielectric patterns that are alternately laminated. An electrode pattern 4 composed of 3 is formed (see FIG. 8B).

After forming the electrode pattern 4, the mask pattern 7 is removed. Then, a protective film made of polyimide is formed to a film thickness (1 μm) on the surface side of the mask strip line from which the mask pattern 7 is removed (see FIG. 8C).

Therefore, the end portion of the conductor pattern 2 is covered with the protective film 11 and is not exposed, so that the conductor patterns 2 (conductor thin film 5) are connected to each other by the end surface 4 of the electrode pattern 4.
There is no short circuit with each other at a.

After forming the protective film 11, dicing is performed for each microstrip line and then inspection is performed to complete the microstrip line.

By the way, in each of the above-mentioned embodiments, the present invention was carried out in the microstrip line which is an example of the thin film multilayer electrode, but the present invention can be carried out not only in the microstrip line, but in the electrode end surface. conductor thin film is of course effective to thin-film multilayered electrode having a structure had to or cause a mutual short-circuit at.

[0060]

As described above, according to the first aspect of the present invention, since only the conductor thin film exposed on the end face of the electrode pattern is selectively etched, the conductor thin film is exposed on the end face of the electrode pattern. There is nothing to do. for that reason,
It is possible to prevent the conductor thin films from short-circuiting each other at the end face of the electrode pattern, and the mutual short-circuiting does not change the characteristics, thus improving the yield.

According to the second aspect of the invention, the conductor thin film exposed on the end face of the electrode pattern is made into an insulator by implanting at least one ion of oxygen, nitrogen and carbon. It was Therefore, it is possible to prevent the conductive thin films from being short-circuited with each other at the end face of the electrode pattern, and the mutual short-circuiting does not change the characteristics, thereby improving the yield.

According to the third aspect of the invention, since the end face of the electrode pattern is covered with the protective film made of the inorganic dielectric material or the organic dielectric material, there is a gap between the conductor thin films exposed on the end surface of the electrode pattern. , These dielectric protective films are to be interposed. Therefore, it is possible to prevent the conductive thin films from being short-circuited with each other at the end face of the electrode pattern, and the mutual short-circuiting does not change the characteristics, thereby improving the yield.

Further, these inventions also have an effect that it is possible to prevent a failure or characteristic deterioration caused by the conductive fine powder adhering to the end surface of the electrode pattern during mounting or use.

[Brief description of drawings]

FIG. 1 is a partially cutaway perspective view showing a simplified main structure of a microstrip line according to a first embodiment of the present invention.

[Figure 2] Manufacture how the thin film multilayer electrode of the first embodiment which is a cross-sectional view illustrating, respectively.

FIG. 3 is a partially cutaway perspective view showing a simplified main structure of a microstrip line according to a second embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a method of manufacturing a thin film laminated electrode according to a second embodiment.

FIG. 5 is a partially cutaway perspective view showing a simplified main structure of a microstrip line according to a third embodiment of the present invention.

FIG. 6 is a cross-sectional view showing the method of manufacturing the thin film laminated electrode according to the third embodiment.

FIG. 7 is a cross-sectional view showing a method of manufacturing a thin film laminated electrode according to a fourth embodiment.

FIG. 8 is a cross-sectional view showing a method of manufacturing a thin film laminated electrode according to a fifth embodiment.

FIG. 9 is a partially cutaway perspective view showing a simplified structure of a main part of a microstrip line according to a conventional example.

FIG. 10 is a cross-sectional view showing a conventional method of manufacturing a thin film laminated electrode.

[Explanation of symbols]

1 Dielectric Substrate 4 Electrode Pattern 4a Electrode End Face 5 Conductor Thin Film 6 Dielectric Thin Film 10 SiO ₂ Protective Film 11 Polyimide Protective Film

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI H01P 3/18 H05K 3/02 Z H05K 3/02 3/06 A 3/06 3/46 E 3/46 3/28 Z / / H05K 3/28 H01L 21/88 Z (56) Reference JP-A-4-43703 (JP, A) JP-A-3-123011 (JP, A) JP-A-3-91217 (JP, A) (58) ) Fields surveyed (Int.Cl. ⁷ , DB name) H01P 11/00 H01G 4/30 311 H01L 21/28 H01L 21/3205 H01P 3/08 H01P 3/18 H05K 3/02 H05K 3/06 H05K 3 / 46 H05K 3/28

Claims (5)

(57) [Claims] 1. An electrode pattern formed by alternately laminating conductor thin films and dielectric thin films on a surface of a dielectric substrate, and then selectively etching the conductor thin film exposed on the end face of the electrode pattern. A method of manufacturing a thin film laminated electrode, comprising: 2. After forming an electrode pattern in which conductor thin films and dielectric thin films are alternately laminated on the surface of a dielectric substrate, oxygen and nitrogen are applied to the conductor thin film exposed at the end face of the electrode pattern. A method for manufacturing a thin film laminated electrode, wherein at least one ion of carbon is implanted. 3. An electrode pattern is formed by alternately laminating conductor thin films and dielectric thin films on the surface of a dielectric substrate, and an end face of the electrode pattern is made of an inorganic dielectric material or an organic dielectric material. A method of manufacturing a thin film laminated electrode, which comprises coating with a protective film. 4. After the formation of the electrode pattern formed by laminating a conductive thin film and the dielectric thin films alternately on a portion of the surface of the dielectric substrate, selecting a conductive thin film exposed to the end face of the electrode pattern A method for manufacturing a thin film laminated electrode, which comprises performing a selective etching. 5. After the formation of the electrode pattern formed by laminating a conductive thin film and the dielectric thin films alternately on a portion of the surface of the dielectric substrate, the end face of the electrode pattern, inorganic dielectric, or organic dielectric A method for producing a thin film laminated electrode, which comprises coating with a protective film composed of a body.