JP3476962B2

JP3476962B2 - Single crystal pulling device

Info

Publication number: JP3476962B2
Application number: JP13813395A
Authority: JP
Inventors: 恒明湊; 勝義豊田
Original assignee: Mitsubishi Electric Corp
Current assignee: Mitsubishi Electric Corp
Priority date: 1995-06-05
Filing date: 1995-06-05
Publication date: 2003-12-10
Anticipated expiration: 2018-12-10
Also published as: JPH08333190A

Description

Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】この発明は例えば半導体材料とし
て用いるシリコン結晶を製造する単結晶引上装置に関
し、特に結晶引上部の結晶原料融液に磁界を印加する磁
界発生部を具備した単結晶引上装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single crystal pulling apparatus for producing, for example, a silicon crystal used as a semiconductor material, and more particularly to a single crystal pulling apparatus equipped with a magnetic field generator for applying a magnetic field to a crystal raw material melt on the upper side of the crystal pulling. It relates to the upper device.

【０００２】[0002]

【従来の技術】図２０は、例えば特公平３−６１６３０
号公報に記載されたＣＺ法(チヨクラルスキー法)による
従来の単結晶引上装置の構成例を示す。単結晶原料融液
１(以下融液とする)が充填してあるルツボ２は、ヒータ
３により加熱され、単結晶原料は常に融液状態に保たれ
ている。この融液１中に種結晶４を挿入し、引上駆動機
構５により種結晶４をある一定速度にて引上げてゆく
と、固体−液界面境界層６にて結晶が成長し、単結晶７
が生成される。この際、ヒータ３の加熱によって誘起さ
れる融液１の流体的運動、即ち熱対流８が発生する。2. Description of the Related Art FIG. 20 shows, for example, Japanese Patent Publication No. 3-61630.
A configuration example of a conventional single crystal pulling apparatus by the CZ method (Czochralski method) described in Japanese Patent Publication is shown. A crucible 2 filled with a single crystal raw material melt 1 (hereinafter referred to as a melt) is heated by a heater 3 so that the single crystal raw material is always kept in a molten state. When the seed crystal 4 is inserted into the melt 1 and the seed crystal 4 is pulled up by the pull-up drive mechanism 5 at a constant speed, the crystal grows in the solid-liquid interface boundary layer 6 and the single crystal 7
Is generated. At this time, the fluid motion of the melt 1, that is, the thermal convection 8 is induced by the heating of the heater 3.

【０００３】この熱対流８の発生原因は次の様に説明さ
れる。即ち、熱対流８は、一般に流体の熱膨張による浮
力と流体の粘性力との釣合いが破れた時に生ずる。この
浮力と粘性力との釣合い関係を表す無次元量がグラスホ
フ数Ｎ_Grである。The cause of generation of the thermal convection 8 will be explained as follows. That is, the thermal convection 8 generally occurs when the balance between the buoyancy due to the thermal expansion of the fluid and the viscous force of the fluid is broken. The non-dimensional quantity that represents the balance between the buoyancy and the viscous force is the Grashof number N _Gr .

【０００４】Ｎ_Gr＝ｇ・α・△Ｔ・Ｒ³／ν² N _Gr = g · α · ΔT · R ³ / ν ²

【０００５】ここで、ｇ；重力加速度 α；融液の熱膨張率 △Ｔ；ルツボ半径方向温度差Ｒ；ルツボ半径 ν；融液の動粘性係数Here, g: gravitational acceleration α: coefficient of thermal expansion of melt ΔT: Temperature difference in radial direction of crucible R: crucible radius ν; Kinetic viscosity coefficient of melt

【０００６】一般に、グラスホフ数Ｎ_Grが融液１の幾何
学的寸法、熱的境界条件等によって決定される臨界値を
越えると、融液１内に熱対流８が発生する。通常、Ｎ_Gr
＞１０⁶にて融液１の熱対流８は乱流状態となり、Ｎ_Gr
＞１０⁹では撹乱状態となる。現在行われている直径３
〜４インチの単結晶引上げの融液条件においてはＮ_Gr＞
１０⁹となり(上記Ｎ_Grの式による)融液１内は撹乱状態
となり、融液１の表面すなわち固体−液界面境界層６は
波立った状態となる。Generally, when the Grashof number N _Gr exceeds a critical value determined by the geometrical dimensions of the melt 1, thermal boundary conditions, etc., thermal convection 8 occurs in the melt 1. Usually N _Gr
At> 10 ^6, the thermal convection 8 of the melt 1 becomes turbulent and N _Gr
When> 10 ⁹ , it is in a disturbed state. The current diameter 3
N _Gr > under melt condition of pulling up to 4 inches of single crystal
10 ⁹ (according to the above N _Gr equation), the inside of the melt 1 is in a disturbed state, and the surface of the melt 1, that is, the solid-liquid interface boundary layer 6 becomes wavy.

【０００７】このような撹乱状態の熱対流８が存在する
と、融液１内、特に固体−液界面境界層６での温度変動
が激しくなり、固体−液界面境界層６の厚さの位置的及
び時間的変動が激しく、成長中結晶の微視的再溶解が顕
著となり、成長した単結晶７中には転位ループ、積層欠
陥等が発生する。しかもこの欠陥部分は、不規則な固体
−液界面境界層６の変動により単結晶引上方向に対して
非均一に発生する。When such a convective heat convection 8 exists, the temperature change in the melt 1, particularly in the solid-liquid interface boundary layer 6, becomes severe, and the thickness of the solid-liquid interface boundary layer 6 varies depending on the position. In addition, the temporal fluctuation is severe, microscopic redissolution of the crystal during growth becomes remarkable, and dislocation loops, stacking faults, etc. occur in the grown single crystal 7. Moreover, this defect portion is nonuniformly generated in the pulling direction of the single crystal due to the irregular fluctuation of the solid-liquid interface boundary layer 6.

【０００８】更に、高温の融液１(例えば１５００℃程
度)が接するルツボ２内面における融液１とルツボ２と
の化学変化により、ルツボ２内面より融液１中に溶解し
ている不純物９がこの熱対流８に搬送され、融液１の内
部全体にわたって分散する。この不純物９が核となり単
結晶７中に転位ループや欠陥、成長縞等が発生して単結
晶７の品質を劣化させている。このため、このような単
結晶７よりＬＳＩ(Ｌarge Ｓcale Ｉntegration；大規
模集積回路)のウエハーを製造すると、欠陥部分を含ん
だウエハーは電気的特性が劣化しているため使用不可能
であり、従って歩留りが悪くなる。Further, due to a chemical change between the melt 1 and the crucible 2 on the inner surface of the crucible 2 in contact with the high-temperature melt 1 (eg, about 1500 ° C.), impurities 9 dissolved in the melt 1 from the inner surface of the crucible 2 are generated. The melt 1 is transported by the heat convection 8 and dispersed throughout the melt 1. The impurities 9 serve as nuclei to generate dislocation loops, defects, growth stripes, etc. in the single crystal 7 and deteriorate the quality of the single crystal 7. Therefore, when an LSI (Large Scale Integration) wafer is manufactured from such a single crystal 7, a wafer including a defective portion cannot be used because its electrical characteristics deteriorate. Yield deteriorates.

【０００９】今後、単結晶７は増々大直径化してゆく
が、上記のグラスホフ数の式からもわかるようにルツボ
２の直径が増大すればする程、グラスホフ数も増大し、
融液１の熱対流８は一層激しさを増し、単結晶７の品質
も劣化の一途をたどることになる。そこで、熱対流８を
抑制し熱的・化学的に平衡状態に近い成長条件にて単結
晶引上げを行うために、融液１に直流磁場を印加する手
法が提案されている。In the future, the diameter of the single crystal 7 will become larger and larger, but as can be seen from the above equation of the Grashof number, as the diameter of the crucible 2 increases, the Grashof number also increases,
The thermal convection 8 of the melt 1 becomes more violent, and the quality of the single crystal 7 will continue to deteriorate. Therefore, in order to suppress the thermal convection 8 and pull the single crystal under the growth condition that is close to the thermal / chemical equilibrium state, a method of applying a DC magnetic field to the melt 1 has been proposed.

【００１０】図２１に磁場印加による従来の単結晶引上
装置の一例を示す。図２１においては図２０と同一部分
には同一符号を付してその説明は省略する。即ち、図２
１においては、ルツボ２の外周に、融液１中に単結晶引
上方向と直交する方向である図示１１方向に一様磁場が
印加されるように磁石１０を配置する。単結晶７の融液
１は一般に電気伝導度σを有する導電体である。このた
め、電気伝導度を有する流体が熱対流８により運動する
際、磁場印加方向１１と平行でない方向に運動している
流体は、レンツの法則により磁気的抵抗力を受ける。こ
のため熱対流８の運動は阻止される。一般に、磁場が印
加された時の磁気抵抗力すなわち磁気粘性係数はν_cfi
はFIG. 21 shows an example of a conventional single crystal pulling apparatus by applying a magnetic field. 21, the same parts as those in FIG. 20 are designated by the same reference numerals and the description thereof will be omitted. That is, FIG.
In No. 1, the magnet 10 is arranged on the outer periphery of the crucible 2 so that a uniform magnetic field is applied to the melt 1 in the 11 direction shown in the drawing, which is a direction orthogonal to the pulling direction of the single crystal. The melt 1 of the single crystal 7 is generally a conductor having an electric conductivity σ. Therefore, when the fluid having electric conductivity moves due to the thermal convection 8, the fluid moving in a direction not parallel to the magnetic field applying direction 11 receives a magnetic resistance force according to Lenz's law. Therefore, the movement of the thermal convection 8 is blocked. Generally, the magnetic resistance force, that is, the magnetic viscosity coefficient when a magnetic field is applied is ν _cfi
Is

【００１１】ν_cfi＝（μＨＤ）²σ／ρΝ _cfi = (μHD) ² σ / ρ

【００１２】ここで、μ；融液の透磁率Ｈ；磁場強さＤ；ルツボ直径 σ；融液の電気伝導度 ρ；融液の密度Where μ: permeability of the melt H: Magnetic field strength D: Crucible diameter σ; electric conductivity of melt ρ; density of melt

【００１３】となり磁場強さが増大すると磁気粘性係数
ν_cfiが増大し、先に示したグラスホフ数Ｎ_Grの式中の
νが増大することとなりグラスホフ数は急激に減少し、
ある磁場強さによってグラスホフ数を臨界値より小さく
することができる。これにより、融液１の熱対流は完全
に抑制される。このようにして磁場を印加することによ
り熱対流が抑制されるので上記した単結晶７中の不純物
含有、転位ループの発生、欠陥・成長縞の発生がなくな
り、しかも単結晶引上方向に均一な品質の単結晶７が得
られ、単結晶７の品質および歩留りが向上する。As the magnetic field strength increases, the magnetic viscosity coefficient ν _cfi increases, and ν in the above equation of the Grashof number N _Gr increases, and the Grashof number sharply decreases.
The Grashof number can be made smaller than the critical value by a certain magnetic field strength. Thereby, the thermal convection of the melt 1 is completely suppressed. By applying a magnetic field in this way, thermal convection is suppressed, so that the above-mentioned inclusion of impurities in the single crystal 7, the generation of dislocation loops, the generation of defects and growth fringes are eliminated, and moreover the single crystal is uniformly pulled up. A quality single crystal 7 is obtained, and the quality and yield of the single crystal 7 are improved.

【００１４】一方、上記特性を呈する磁場印加による単
結晶引上装置としては、近時脚光をあびる超電導磁石を
採用したものがある。On the other hand, as a single crystal pulling apparatus for applying a magnetic field having the above-mentioned characteristics, there is one that employs a superconducting magnet that illuminates the spotlight in the near future.

【００１５】図２２および図２３は、超電導磁石装置を
具備した従来の単結晶引上装置の一構成例を示すもの
で、図２２は正面方向から見た構成図、図２３は上面方
向から見た構成図であり、図２１と同一部分には同一符
号を付してその説明を省略する。22 and 23 show an example of the construction of a conventional single crystal pulling apparatus equipped with a superconducting magnet apparatus. FIG. 22 is a front view showing the construction and FIG. 23 is a top view. 21 is a structural diagram, and the same portions as those in FIG. 21 are denoted by the same reference numerals and the description thereof will be omitted.

【００１６】図２２および図２３において、融液１に図
示１１なる方向の磁場(以下横磁場とする)を印加するた
めに、引上装置チャンバ１２の外部に、円筒型の超電導
コイル１３、１４を、コイル中心軸と横磁場方向１１と
が一致する図示位置に設置する。22 and 23, in order to apply a magnetic field in the direction shown in FIG. 11 (hereinafter referred to as a transverse magnetic field) to the melt 1, the cylindrical superconducting coils 13, 14 are provided outside the pulling apparatus chamber 12. Is installed at a position shown in the drawing in which the central axis of the coil and the direction 11 of the transverse magnetic field coincide.

【００１７】超電導コイル１３は、極低温(例えば４.２
Ｋ)液体ヘリウム１５で満たされた内槽１６に収納さ
れ、超電導状態に保持されている。超電導コイル１３を
極低温状態にしておく保冷容器１７ａ、１７ｂは、内槽
１６と外槽１８およびこれらの中間に設置され外部から
の侵入熱量を低減させる輻射シールド板１９より成って
いる。小型冷凍機５０ａ、５０ｂ、６０ａ、６０ｂは、
それぞれ保冷容器１７ａ、１７ｂに直接取付けられてい
る。The superconducting coil 13 has an extremely low temperature (for example, 4.2).
K) It is housed in an inner tank 16 filled with liquid helium 15 and kept in a superconducting state. The cold insulation containers 17a and 17b for keeping the superconducting coil 13 in a cryogenic state are composed of an inner tank 16 and an outer tank 18, and a radiation shield plate 19 installed in the middle between them to reduce the amount of heat entering from the outside. The small refrigerators 50a, 50b, 60a, 60b are
They are directly attached to the cold containers 17a and 17b, respectively.

【００１８】小型冷凍機５０ａ、５０ｂは、この小型冷
凍機５０ａ，５０ｂ内を循環している冷凍媒体(例えば
ヘリウム)５１ａ、５１ｂを圧縮する圧縮機ユニット５
２ａ、５２ｂと、これらにより圧縮された冷凍媒体５１
ａ、５１ｂを断熱膨張させ冷却する膨張機５３ａ、５３
ｂ(５３ｂは図示せず)と、輻射シールド温度(例えば８
０Ｋ)まで冷却された冷凍ステージ５４ａ、５４ｂ(５４
ｂは図示せず)と、ヘリウム液化温度(例えば４.２Ｋ)ま
で冷却されたヘリウム再凝縮器５５ａ、５５ｂ(５５ｂ
は図示せず)とより構成されている。The compact refrigerators 50a and 50b are compressor units 5 for compressing refrigerating media (for example, helium) 51a and 51b circulating in the compact refrigerators 50a and 50b.
2a and 52b and a refrigerating medium 51 compressed by these
Expanders 53a and 53 for adiabatically expanding and cooling a and 51b
b (53b is not shown) and the radiation shield temperature (for example, 8
Refrigeration stages 54a, 54b (54
b is not shown) and the helium recondensers 55a, 55b (55b) cooled to the helium liquefaction temperature (eg 4.2K).
Are not shown).

【００１９】小型冷凍機６０ａ、６０ｂは、小型冷凍機
５０ａ、５０ｂと同様な構造を有し、冷凍媒体６１ａ、
６１ｂと、圧縮機ユニット６２ａ、６２ｂと、膨張機６
３ａ、６３ｂ(６３ｂは図示せず)と、輻射シールド温度
を有する冷凍ステージ６４ａ、６４ｂ(６４ｂは図示し
ない)と、極低温(例えば２０Ｋ)に冷却された冷凍ステ
ージ６５ａ、６５ｂ(６５ｂは図示せず)とにより構成さ
れている。The small refrigerators 60a and 60b have a structure similar to that of the small refrigerators 50a and 50b.
61b, compressor units 62a and 62b, and expander 6
3a, 63b (63b is not shown), freezing stages 64a, 64b (64b are not shown) having a radiation shield temperature, and freezing stages 65a, 65b (65b are not shown) cooled to a cryogenic temperature (for example, 20K). )) And.

【００２０】超電導コイル１３、１４は、常温中(例え
ば３００Ｋ)に布設されたパワーリード２０により直列
に接続され、電源２１より励磁電流が供給される。パワ
ーリード２０よりの外部侵入熱は、小型冷凍機６０ａ、
６０ｂの冷凍ステージ６４ａ、６４ｂ、６５ａ、６５ｂ
により除去される。コイル励磁に伴い蒸発した内槽１６
内のヘリウムガスは、小型冷凍機５０ａ、５０ｂのヘリ
ウム再凝縮器５５ａ、５５ｂにより再凝縮(液化)され
る。このようにして保冷容器１７ａ、１７ｂ内には、常
に液体ヘリウムが満たされ、超電導コイル１３、１４
は、超電導状態を保持し続けることができる。The superconducting coils 13 and 14 are connected in series by a power lead 20 laid at room temperature (for example, 300K), and an exciting current is supplied from a power source 21. The heat entering from the power lead 20 to the outside is the small refrigerator 60a,
60b freezing stages 64a, 64b, 65a, 65b
Are removed by. Inner tank 16 evaporated with coil excitation
The helium gas therein is recondensed (liquefied) by the helium recondensers 55a and 55b of the small refrigerators 50a and 50b. In this way, the cold containers 17a, 17b are always filled with liquid helium, and the superconducting coils 13, 14
Can maintain a superconducting state.

【００２１】一般に、単結晶引上装置は、その引上運転
が完了する毎にルツボ２および引上装置チャンバ１２の
内面を清掃する必要がある。超電導磁石装置を具備した
従来の単結晶引上装置では、この清掃を下記のような手
順で実施する。まづ、超電導磁石装置から発生する電磁
力が作用する保冷容器１７ａ、１７ｂを支えるために設
置してある支え棒２２を取り除く。各保冷容器１７ａ、
１７ｂを保持している架台２９ａ、２９ｂの下部に設置
された床固定レール２３上を、水平方向２４に図示２５
なる固定位置まで移動させ、単結晶引上装置本体と超電
導磁石装置とを完全に分離する。この状態にてルツボ２
およびチャンバ１２の清掃を行う。Generally, in the single crystal pulling apparatus, it is necessary to clean the inner surfaces of the crucible 2 and the pulling apparatus chamber 12 every time the pulling operation is completed. In a conventional single crystal pulling apparatus equipped with a superconducting magnet device, this cleaning is performed in the following procedure. First, the support rod 22 installed to support the cold insulation containers 17a and 17b on which the electromagnetic force generated from the superconducting magnet device acts is removed. Each cold storage container 17a,
In the horizontal direction 24, the floor fixing rail 23 installed under the mounts 29a and 29b holding 17b is shown in the horizontal direction 24 in FIG.
Then, the main body of the single crystal pulling apparatus is completely separated from the superconducting magnet apparatus. Crucible 2 in this state
And the chamber 12 is cleaned.

【００２２】また、例えば、同様に特公平３−６１６３
０号公報に示された図２４、２５に示す従来の単結晶引
上装置はＵ字型の配管で接続されてルツボを取り囲むよ
うな超電導マグネットを備え、ルツボの融液に磁界を印
加している。また、超電導マグネットのコイルは直列に
接続され、１つの電源から電流が供給されるようになっ
ている。また、超電導マグネットは図２５の２４で示さ
れるように、水平方向に移動できるような構造が可能で
ある。In addition, for example, like Japanese Patent Publication No. 3-6163.
The conventional single crystal pulling apparatus shown in FIGS. 24 and 25 shown in Japanese Unexamined Patent Publication 0 has a superconducting magnet that is connected by a U-shaped pipe and surrounds the crucible, and applies a magnetic field to the melt of the crucible. There is. Further, the coils of the superconducting magnet are connected in series so that current is supplied from one power source. Further, the superconducting magnet may have a structure capable of moving in the horizontal direction as shown by 24 in FIG.

【００２３】また、例えば特公平５−５９８７５号公報
に示された図２６に示す従来の単結晶引上装置では磁束
を通すためのリターンヨークを備えたマグネットが記載
されており、そのマグネットは常電導伝導マグネットで
も超電導マグネットでもかまわないことが記述されてい
る。Further, for example, in the conventional single crystal pulling apparatus shown in FIG. 26 of Japanese Patent Publication No. 5-59875, a magnet having a return yoke for passing a magnetic flux is described, and the magnet is normally used. It is described that either a conductive magnet or a superconducting magnet may be used.

【００２４】さらに、特開昭５８−２１７４９３号公報
に示された図２７に示す単結晶引上装置では、ルツボの
融液部のほぼ中心付近に等軸対称かつ放射状のカスプ磁
界を印加することによって育成する結晶の性状が改善で
きることが示されている。Further, in the single crystal pulling apparatus shown in FIG. 27 shown in Japanese Patent Laid-Open No. 58-217493, an equiaxial symmetrical and radial cusp magnetic field is applied to the vicinity of the center of the melt portion of the crucible. It has been shown that the properties of the grown crystal can be improved.

【００２５】また、特開昭６１−２２２９８４号公報に
示された図２８に示す結晶引上装置では、コイル２６に
よってルツボの融液部の表面に等軸対称かつ放射状のカ
スプ磁界を印加することによって育成する結晶の性状を
改善しようとすることが示されている。In the crystal pulling apparatus shown in FIG. 28 shown in Japanese Patent Laid-Open No. 61-229884, a coil 26 is used to apply an equiaxially symmetric and radial cusp magnetic field to the surface of the melt portion of the crucible. It has been shown to try to improve the properties of the crystal grown by.

【００２６】[0026]

【発明が解決しようとする課題】従来の単結晶引上装置
は以上のように構成されているので、次のような問題点
があった。まず、電磁力を支持するための支持部材(図
２３参照)が必要で、その支持部材のための構造が単結
晶引上部の引上装置チャンバをよけるように設置する必
要があり、装置全体の構造が複雑になると共に装置全体
の占有面積が大きくなってしまうという問題点があっ
た。Since the conventional single crystal pulling apparatus is constructed as described above, it has the following problems. First, a supporting member (see FIG. 23) for supporting the electromagnetic force is required, and the structure for the supporting member needs to be installed so as to avoid the pulling apparatus chamber above the single crystal pulling unit. However, there is a problem that the structure becomes complicated and the area occupied by the entire device becomes large.

【００２７】また、単結晶引上部の引上装置チャンバお
よびルツボの清掃、メンテナンスを行うためにマグネッ
トからなる磁界発生部を移動させる必要があり、このた
めに磁界発生部と引上装置チャンバの間に距離を取る必
要があり(図２３参照)、そのため、磁界発生部の必要起
磁力が大きくなり、その結果として、漏れ磁界が大き
い、電源装置や磁界発生部のコイル本体も大きくなって
しまう等の問題点があった。Further, in order to clean and maintain the pulling apparatus chamber and the crucible above the single crystal pulling section, it is necessary to move the magnetic field generating section composed of a magnet. For this reason, the magnetic field generating section and the pulling apparatus chamber are to be moved. 23 (see FIG. 23), which increases the required magnetomotive force of the magnetic field generation unit, resulting in a large leakage magnetic field, a large power supply device, and a large coil body of the magnetic field generation unit. There was a problem.

【００２８】さらに、磁界発生部の磁極の引上装置チャ
ンバ側に面した部分の形状が平面形状であるため、ルツ
ボ内の融液部分での磁界の均一度が悪いという問題点も
あった。そして、磁界発生部の１対のコイルが直列に励
磁されるため、ルツボの中心に対して対称に磁界が印加
され、磁界の形状が固定されてしまうため、結晶育成プ
ロセスでの自由度が制限されてしまうという問題点もあ
った。Further, since the shape of the portion of the magnetic pole of the magnetic field generating portion facing the pulling apparatus chamber side is a planar shape, there is a problem that the uniformity of the magnetic field in the melted portion in the crucible is poor. Then, since the pair of coils of the magnetic field generator are excited in series, a magnetic field is applied symmetrically with respect to the center of the crucible and the shape of the magnetic field is fixed, which limits the degree of freedom in the crystal growth process. There was also the problem that it would be done.

【００２９】この発明は上記のような問題点を解消する
ためになされたもので、単結晶原料融液に対して磁界を
印加する方式の結晶引上装置に関し、より単純な構造で
でき、従来より少ない起磁力で単結晶原料融液に対して
同じ磁界を発生でき、また漏洩磁界の小さい単結晶引上
装置を提供することを目的とする。The present invention has been made in order to solve the above problems, and relates to a crystal pulling apparatus of the type in which a magnetic field is applied to a single crystal raw material melt, which has a simpler structure and is conventional. It is an object of the present invention to provide a single crystal pulling apparatus that can generate the same magnetic field in a single crystal raw material melt with a smaller magnetomotive force and has a small leakage magnetic field.

【００３０】[0030]

【課題を解決するための手段】上記の目的に鑑み、この
発明の第１の発明は、ルツボに充填された単結晶原料融
液に種結晶を挿入し、この種結晶を引き上げることによ
り単結晶を生成する単結晶引上部と、この単結晶引上部
の両側に対になって設けられたコイルを含み、単結晶原
料融液部に水平方向の磁界を与える磁界発生部と、から
なる単結晶引上装置において、上記磁界発生部のコイル
をコイル間に生じる引力を受けるようにして上記単結晶
引上部のチャンバの外側の両側に取り付ける支持構造を
備えたことを特徴とする単結晶引上装置にある。また、
上記磁界発生部のコイルが上記単結晶引上部のチャンバ
の外形形状に沿わせた形状を有することを特徴とする。
また、上記磁界発生部のコイルが超電導マグネットから
なることを特徴とする。また、上記単結晶引上部の両側
の上記磁界発生部のコイルに別々の励磁電流を与える第
１の励磁手段を備えたことを特徴とする。また、上記磁
界発生部のコイルの磁極がそれぞれ上記単結晶引上部の
チャンバの外形形状に沿わせた形状を有することを特徴
とする。また、上記磁界発生部が、上記両側のコイルの
間に延びるリターンヨークを含むことを特徴とする。ま
た、上記単結晶引上部の両側の上記磁界発生部のコイル
を上記単結晶引上部から引き離す方向に移動させる移動
機構を備えたことを特徴とする。また、ルツボに充填さ
れた単結晶原料融液に種結晶を挿入し、この種結晶を引
き上げることにより単結晶を生成する単結晶引上部と、
上記ルツボの上側と下側の位置にそれぞれ設けられた上
記種結晶の引上げ方向を巻軸とするコイルを含み、単結
晶原料融液部にカスプ磁界を発生する磁界発生部と、か
らなる単結晶引上装置において、上記磁界発生部が、上
記単結晶引上部のチャンバ外壁に固定されていることを
特徴とする。また、上記磁界発生部が超電導マグネット
からなり、上記コイルをまとめて納める保冷容器を含
み、この保冷容器が上記単結晶引上部のチャンバに固定
されていることを特徴とする。また、上記チャンバと保
冷容器が一体に形成されていることを特徴とする。ま
た、上記保冷容器のコイルとコイルの間の部分に開口を
設け、上記チャンバの上記開口に当たる部分に融液観察
用の透視窓を設けたことを特徴とする。また、上記上下
のコイルに別々の極性の電流を流す第２の励磁手段を備
え、カスプ磁界と種結晶の引上方向の磁界を選択的に発
生することを特徴とする。また、２つの可変直流電源と
１本を共有する３本のリード線で上下のコイルに別々の
値の電流を流し、２つの可変直流電源の一方で全体の励
磁電流を調整し、他方でコイルに流れる励磁電流の比率
を調整する第３の励磁手段を備えたことを特徴とする。
また、上記３本のリード線のうち１本の定格電流が他の
２本のリード線の定格電流の約５０％であることを特徴
とする。In view of the above object, the first invention of the present invention is to insert a seed crystal into a single crystal raw material melt filled in a crucible and pull the single crystal to obtain a single crystal. A single crystal pulling part for generating a single crystal, and a magnetic field generating part for applying a horizontal magnetic field to the single crystal raw material melt part, which includes a pair of coils provided on both sides of the single crystal pulling part. in pulling apparatus, a single crystal pulling, characterized in that it comprises a support structure so as to receive an attractive force causing the coil of the magnetic field generating unit between the coils attached to both sides of the outer chamber of the single crystal pulling portion On the device. Also,
The coil of the magnetic field generation unit is a chamber above the single crystal
Characterized in that it has a shape that along a contour.
In addition, the coil of the magnetic field generation unit is a superconducting magnet
It is characterized by Also, both sides of the upper part of the single crystal
The first exciting means for applying different exciting currents to the coils of the magnetic field generating section is provided. Also, the above magnet
The magnetic poles of the field-generating coil are located above the single crystal
Characterized in that it has a shape along a contour shape of the chamber. In addition, the magnetic field generation unit is
It is characterized by including a return yoke extending therebetween . Well
Also, the coils of the magnetic field generating section on both sides of the upper part of the single crystal
The characterized by comprising a moving mechanism for moving in a direction away off from the single crystal pulling portion. Also, fill the crucible
Insert a seed crystal into the single crystal raw material melt, and pull this seed crystal.
A single crystal pulling unit which generates a single crystal by bring come,
A single crystal comprising a coil having a winding axis in the pulling direction of the seed crystal respectively provided at the upper side and the lower side of the crucible, and a magnetic field generating section for generating a cusp magnetic field in the single crystal raw material melt section, In the pulling apparatus, the magnetic field generating section is fixed to the outer wall of the chamber above the single crystal pulling section. In addition, the magnetic field generator is a superconducting magnet.
It is characterized in that it comprises a cold insulation container for accommodating the above-mentioned coils together , and this cold insulation container is fixed to the chamber above the single crystal pulling portion. In addition, the chamber and
It is characterized in that the cold container is integrally formed. Well
Also, make an opening in the part between the coils of the above cold storage container.
Provided, characterized in that a transparent window for melt observation portion corresponding to the opening port of the chamber. Also, above and below
Equipped with a second excitation means for passing currents of different polarities in the coil
In addition, the cusp magnetic field and the magnetic field in the pull-up direction of the seed crystal are selectively generated. Also, two variable DC power supplies
Three lead wires sharing one separate upper and lower coils
Flowing a value of the current, to adjust the overall excitation current in one of two of the variable DC power supply, characterized by comprising a third excitation means for adjusting the ratio of the exciting current flowing through the coil in the other.
In addition, the rated current of one of the three lead wires is
It is characterized in that it is about 50% of the rated current of the two lead wires .

【００３１】[0031]

【００３２】[0032]

【００３３】[0033]

【００３４】[0034]

【００３５】[0035]

【００３６】[0036]

【００３７】[0037]

【００３８】[0038]

【００３９】[0039]

【００４０】[0040]

【００４１】[0041]

【００４２】[0042]

【００４３】[0043]

【００４４】[0044]

【００４５】[0045]

【００４６】[0046]

【００４７】[0047]

【作用】この発明の第１の発明では、磁界発生部の２つ
のコイルをそれぞれ単結晶引上部のチャンバに取付け
し、電磁力をチャンバで支持するようにした。In the first aspect of the present invention, the two coils of the magnetic field generator are attached to the chamber above the single crystal, and the electromagnetic force is supported by the chamber.

【００４８】この発明の第２の発明では、コイルを単結
晶引上部のチャンバに沿わせた形の鞍形とした。In the second aspect of the present invention, the coil has a saddle shape in which the coil extends along the chamber above the single crystal.

【００４９】この発明の第３の発明では、リターンヨー
ク付の磁界発生部を単結晶引上部のチャンバに取付け
た。In the third aspect of the present invention, the magnetic field generating section with the return yoke is attached to the chamber above the single crystal.

【００５０】この発明の第４の発明では、超電導マグネ
ットからなる磁界発生部を単結晶引上部のチャンバに取
付けした。According to the fourth aspect of the present invention, the magnetic field generating portion made of a superconducting magnet is attached to the chamber above the single crystal.

【００５１】この発明の第５の発明では、２つのコイル
の励磁電流を変えることが可能な第１の励磁手段を設け
た。In the fifth aspect of the present invention, the first exciting means capable of changing the exciting currents of the two coils is provided.

【００５２】この発明の第６の発明では、単結晶引上部
のチャンバ外形に磁界発生部のコイルの磁極の形状を一
致させた。In the sixth aspect of the present invention, the shape of the magnetic pole of the coil of the magnetic field generating portion is matched with the outer shape of the chamber above the single crystal.

【００５３】この発明の第７の発明では、リターンヨー
クを設けた磁界発生部において、コイルの磁極形状を単
結晶引上部のチャンバ外形に一致させた。In the seventh aspect of the present invention, in the magnetic field generating portion provided with the return yoke, the magnetic pole shape of the coil is matched with the outer shape of the chamber above the single crystal.

【００５４】この発明の第８の発明では、単結晶引上部
のチャンバ外形に磁界発生部のコイルの磁極の形状を一
致させたものにおいて、コイルをそれぞれ単結晶引上部
のチャンバに取付けた。In the eighth aspect of the present invention, in the case where the shape of the magnetic pole of the coil of the magnetic field generating section is matched with the outer shape of the chamber above the single crystal, the coils are attached to the chamber above the single crystal.

【００５５】この発明の第９の発明では、磁極発生部の
コイルをそれぞれ単結晶引上部から離れる方向に移動可
能とした。In the ninth aspect of the present invention, the coils of the magnetic pole generating portion can be moved in directions away from the single crystal pulling portion.

【００５６】この発明の第１０の発明では、単結晶引上
部のチャンバ内に磁極発生部を挿入させた。In the tenth aspect of the present invention, the magnetic pole generator is inserted into the chamber above the single crystal.

【００５７】この発生の第１１の発明では、カスプ磁界
を発生する磁界発生部を単結晶引上部のチャンバに固定
した。In the eleventh invention of this generation, the magnetic field generating portion for generating a cusp magnetic field is fixed to the chamber above the single crystal.

【００５８】この発明の第１２の発明では、超電導マグ
ネットからなる磁界発生部を単結晶引上部のチャンバに
固定した。In the twelfth aspect of the present invention, the magnetic field generating portion made of a superconducting magnet is fixed to the chamber above the single crystal.

【００５９】この発明の第１３の発明では、超電導マグ
ネットからなる磁界発生部を単結晶引上部のチャンバに
一体に設けた。In the thirteenth aspect of the present invention, the magnetic field generating portion formed of a superconducting magnet is integrally provided in the chamber above the single crystal.

【００６０】この発明の第１４の発明では、超電導マグ
ネットからなる磁界発生部を単結晶引上部のチャンバに
一体に設けたものにおいて、磁界発生部の保冷容器に開
口を設け、チャンバに透視窓を設けてチャンバ内部を観
察可能とした。According to a fourteenth aspect of the present invention, in which the magnetic field generating portion comprising a superconducting magnet is integrally provided in the chamber above the single crystal pulling portion, an opening is provided in the cold insulating container of the magnetic field generating portion and a transparent window is provided in the chamber. It was provided so that the inside of the chamber could be observed.

【００６１】この発明の第１５の発明では、カスプ磁界
を発生する磁界発生部の上下のコイルに別々の極性の電
流を流して、カスプ磁界と種結晶の引上方向の磁界を選
択的に発生すことのできる第２の励磁手段を設けた。In the fifteenth aspect of the present invention, currents of different polarities are caused to flow through the coils above and below the magnetic field generating portion for generating the cusp magnetic field, and the cusp magnetic field and the magnetic field in the pull-up direction of the seed crystal are selectively generated. A second exciting means which can be turned on is provided.

【００６２】この発明の第１６の発明では、２つの可変
直流電源と１本を共有する３本のリード線で上下のコイ
ルに別々の値の電流を流す第３の励磁手段を設けた。In the sixteenth aspect of the present invention, the third exciting means is provided with three lead wires sharing one with the two variable DC power supplies and passing different values of current through the upper and lower coils.

【００６３】この発明の第１７の発明では、上記第１６
の発明において、３本のリード線のうち、１本の定格電
流が他の２本のリード線の定格電流の約５０％であるよ
うにした。In the seventeenth aspect of the present invention, the above sixteenth aspect
In the invention, the rated current of one of the three lead wires is about 50% of the rated current of the other two lead wires.

【００６４】[0064]

【実施例】以下、実施例に従って説明する。なお、従来
の同一もしくは相当する部分は同一符号で示す。実施例１．図１はこの発明の第１の実施例による単結晶
引上装置の構成を示す上面図である。図１において、１
００は単結晶引上部、２００は超電導マグネット２０
１、２０２からなる磁界発生部である。Embodiments will be described below according to embodiments. It should be noted that the same or corresponding parts in the related art are denoted by the same reference numerals. Example 1. FIG. 1 is a top view showing the structure of a single crystal pulling apparatus according to the first embodiment of the present invention. In FIG. 1, 1
00 is a single crystal pulling upper part, 200 is a superconducting magnet 20.
A magnetic field generator 1, 202.

【００６５】１２は単結晶引上部１００の最外部となる
チャンバで、ルツボ周囲の雰囲気を保つ作用と、ヒータ
から発生する熱を外部に出さないようにする作用があ
る。チャンバ１２内の構造は基本的に図２０以降に示し
た従来のもの同じである。１３、１４は超電導コイル、
１７ａ、１７ｂは超電導マグネット２０１、２０２の外
槽である保冷容器で、超電導マグネット内部を真空に保
つ作用がある。３０は超電導マグネット２０１、２０２
を単結晶引上部１００のチャンバ１２に取り付ける支持
構造である。Numeral 12 is a chamber which is the outermost part of the single crystal pulling upper part 100 and has a function of keeping the atmosphere around the crucible and a function of keeping the heat generated from the heater out. The structure inside the chamber 12 is basically the same as the conventional structure shown in FIG. 13 and 14 are superconducting coils,
Reference numerals 17a and 17b denote cold containers, which are outer tanks of the superconducting magnets 201 and 202, and have a function of keeping a vacuum inside the superconducting magnets. 30 is a superconducting magnet 201, 202
Is a support structure for attaching the to the chamber 12 of the single crystal pulling upper part 100.

【００６６】超電導コイル１３と超電導コイル１４の間
には、単結晶引上部１００の動作中に磁界を与えること
でお互いに引力が働く。このため、この引力は支持構造
３０を介して、チャンバ１２に伝わり、支持がなされ
る。これにより、図２３で示されるような大きな構造を
必要としない。なお、これは常伝導のコイルの場合にも
適用可能であり、同様の効果を奏する。An attractive force acts between the superconducting coil 13 and the superconducting coil 14 by applying a magnetic field during the operation of the single crystal pulling portion 100. Therefore, this attractive force is transmitted to and supported by the chamber 12 via the support structure 30. This eliminates the need for a large structure as shown in FIG. It should be noted that this can be applied to the case of a normal conduction coil and has the same effect.

【００６７】実施例２．図２はこの発明の第２の実施例
による単結晶引上装置の構成を示す上面図である。図２
において、３１は鞍形の形状をした超電導コイルであ
る。このように、超電導コイル３１の形状および保冷容
器１７ａ、１７ｂの形状すなわちコイルの形状をチャン
バ１２の外形形状に沿わせた形状にすることにより、よ
り小さな起磁力でチャンバ１２の中心にあるルツボ内の
単結晶原料融液に所望の大きさの磁界を発生させること
ができる。なお、これは常伝導のコイルの場合にも適用
可能であり、同様の効果を奏する。Example 2. FIG. 2 is a top view showing the structure of a single crystal pulling apparatus according to the second embodiment of the present invention. Figure 2
In the above, reference numeral 31 is a superconducting coil having a saddle shape. In this way, by making the shape of the superconducting coil 31 and the shape of the cold insulation containers 17a and 17b, that is, the shape of the coil conform to the outer shape of the chamber 12, the inside of the crucible at the center of the chamber 12 can be made with a smaller magnetomotive force. A magnetic field having a desired magnitude can be generated in the single crystal raw material melt. It should be noted that this can be applied to the case of a normal conduction coil and has the same effect.

【００６８】実施例３．図３はこの発明の第３の実施例
による単結晶引上装置の構成を示す上面図である。図３
はリターンヨーク４１を含む常電導の磁界発生部２００
を設置した単結晶引上装置を示しており、図において、
３０は単結晶引上部１００のチャンバ１２と両側の磁極
４２をつなぐ支持構造である。チャンバ１２と磁極４２
がこのように固定されているので、支持構造が簡単にで
き、またチャンバ１２内部のメンテナンス時には、磁界
発生部２００とチャンバ１２を一緒に移動すればよい。
また、磁極４２はチャンバ１２外形に隣接して設置する
ことができるので、単結晶原料融液に同じ磁界を印加す
る場合にはより小さな起磁力で済む。Example 3. FIG. 3 is a top view showing the structure of a single crystal pulling apparatus according to the third embodiment of the present invention. Figure 3
Is a normally conductive magnetic field generation unit 200 including a return yoke 41.
It shows a single crystal pulling apparatus installed with, in the figure,
Reference numeral 30 denotes a support structure that connects the chamber 12 of the single crystal pulling upper portion 100 and the magnetic poles 42 on both sides. Chamber 12 and magnetic pole 42
Since it is fixed in this way, the support structure can be simplified, and the magnetic field generation unit 200 and the chamber 12 can be moved together during maintenance of the interior of the chamber 12.
Further, since the magnetic pole 42 can be installed adjacent to the outer shape of the chamber 12, a smaller magnetomotive force is required when the same magnetic field is applied to the single crystal raw material melt.

【００６９】実施例４．図４はこの発明の第４の実施例
による単結晶引上装置の構成を示す上面図である。図に
おいて、超電導マグネットからなる磁界発生部２００は
単結晶引上部１００のチャンバ１２と支持構造３０で接
続されており、チャンバ１２内部のメンテナンス時に
は、磁界発生部２００とチャンバ１２を一緒に移動すれ
ばよい。また、超電導コイル１３、１４はチャンバ１２
に隣接して設置することができるので、単結晶原料融液
に同じ磁界を印加する場合にはより小さな起磁力で済
む。さらに、磁界発生部２００が超電導マグネットの場
合、図４に示すリターンヨーク付の常電導のコイルの場
合と比較して軽量であり、チャンバ１２と磁界発生部２
００の移動は比較的容易である。Example 4. FIG. 4 is a top view showing the structure of a single crystal pulling apparatus according to the fourth embodiment of the present invention. In the figure, a magnetic field generation unit 200 made of a superconducting magnet is connected to the chamber 12 of the single crystal pulling upper part 100 by a support structure 30. When the inside of the chamber 12 is maintained, the magnetic field generation unit 200 and the chamber 12 may be moved together. Good. Further, the superconducting coils 13 and 14 are provided in the chamber 12
Since they can be installed adjacent to each other, a smaller magnetomotive force is required when the same magnetic field is applied to the single crystal raw material melt. Further, when the magnetic field generating unit 200 is a superconducting magnet, it is lighter in weight than the case of the normal conducting coil with the return yoke shown in FIG.
Moving 00 is relatively easy.

【００７０】実施例５．図５はこの発明の第５の実施例
による単結晶引上装置の構成を示す上面図である。図５
において、３２は第１の励磁手段を構成する可変直流電
源、１３、１４は超電導コイルである。左右の超電導コ
イル１３、１４はそれぞれ別の可変直流電源３２で励磁
可能なようになっており、励磁電流を調整することによ
って例えば１１に示すような磁界の方向が得られる。単
結晶引上方向の面についても同様な分布となる。これに
より、ルツボ形状やヒータ強度の不均一差による結晶の
成長不良を磁界の不均一で補償するプロセスが可能とな
る。これは常電導のコイルのものにも適用可能であり、
同様な効果を奏する。Example 5. FIG. 5 is a top view showing the structure of a single crystal pulling apparatus according to the fifth embodiment of the present invention. Figure 5
In the above, 32 is a variable DC power source which constitutes the first exciting means, and 13 and 14 are superconducting coils. The left and right superconducting coils 13 and 14 can be excited by different variable DC power sources 32, and the direction of the magnetic field as shown by 11, for example, can be obtained by adjusting the exciting current. The same distribution is obtained for the surface in the single crystal pulling up direction. This makes it possible to perform a process of compensating the crystal growth failure due to the unevenness of the crucible shape and the heater strength by the nonuniformity of the magnetic field. This is also applicable to normal conducting coils,
Has the same effect.

【００７１】実施例６．図６はこの発明の第６の実施例
による単結晶引上装置の構成を示す上面図である。図に
示されているように磁界発生部２００の磁極４２はそれ
ぞれ、単結晶引上部１００のチャンバ１２の外形形状に
合わせた形状にされている。これにより、磁極４２とチ
ャンバ１２の間のギャップを小さくできることにより、
従来の装置と比較して、より小さい起磁力でチャンバ１
２内のルツボ部分(図示せず)で所望の磁界を得ることが
でき、さらにルツボ部分での磁界均一性も改善される。Example 6. FIG. 6 is a top view showing the structure of a single crystal pulling apparatus according to the sixth embodiment of the present invention. As shown in the figure, the magnetic poles 42 of the magnetic field generator 200 are each shaped to match the outer shape of the chamber 12 of the single crystal pulling upper portion 100. As a result, the gap between the magnetic pole 42 and the chamber 12 can be reduced,
The chamber 1 has a smaller magnetomotive force than the conventional device.
A desired magnetic field can be obtained in the crucible portion (not shown) in the section 2, and the magnetic field uniformity in the crucible portion is also improved.

【００７２】実施例７．図７はこの発明の第７の実施例
による単結晶引上装置の構成を示す上面図である。この
実施例では、リターンヨーク４１を有する磁界発生部２
００において上記実施例６と同様の発明を実施したもの
であり、同様に、従来の装置と比較して、より小さい起
磁力でチャンバ１２内のルツボ部分(図示せず)で所望の
磁界を得ることができ、さらにルツボ部分での磁界均一
性も改善される。Example 7. FIG. 7 is a top view showing the structure of a single crystal pulling apparatus according to the seventh embodiment of the present invention. In this embodiment, the magnetic field generator 2 having the return yoke 41 is used.
No. 00 is the same as that of the sixth embodiment, and similarly, a desired magnetic field is obtained in the crucible portion (not shown) in the chamber 12 with a smaller magnetomotive force as compared with the conventional device. In addition, the magnetic field uniformity in the crucible portion can be improved.

【００７３】実施例８．図８はこの発明の第８の実施例
による単結晶引上装置の構成を示す上面図である。図に
おいて、３０は単結晶引上部１００のチャンバ１２と両
側の磁極４２をつなぐ支持構造である。チャンバ１２と
磁極４２がこのように固定されているので、チャンバ１
２内部のメンテナンス時には、磁界発生部２００とチャ
ンバ１２を一緒に移動すればよい。これにより上記実施
例６および７と同様に、より小さい起磁力でチャンバ１
２内のルツボ部分(図示せず)で所望の磁界を得ることが
でき、さらにルツボ部分での磁界均一性も改善されると
共に、磁界発生部２００が単結晶引上部１００のチャン
バ１２に固定されているため、チャンバ１２と一緒に磁
界発生部２００を取り除くことができ、単結晶引上部１
００のチャンバ１２内のメンテナンスがより容易に行う
ことができる。Example 8. FIG. 8 is a top view showing the structure of a single crystal pulling apparatus according to the eighth embodiment of the present invention. In the figure, 30 is a support structure for connecting the chamber 12 of the single crystal pulling upper portion 100 and the magnetic poles 42 on both sides. Since the chamber 12 and the magnetic pole 42 are thus fixed, the chamber 1
The magnetic field generation unit 200 and the chamber 12 may be moved together during maintenance of the inside of the unit 2. As a result, in the same manner as in the sixth and seventh embodiments, the chamber 1 is generated with a smaller magnetomotive force.
A desired magnetic field can be obtained in the crucible part (not shown) in the second part, the magnetic field uniformity in the crucible part is also improved, and the magnetic field generating part 200 is fixed to the chamber 12 of the single crystal pulling upper part 100. Therefore, the magnetic field generation unit 200 can be removed together with the chamber 12, and the single crystal pulling upper portion 1 can be removed.
The maintenance of the inside of the chamber 00 of 00 can be performed more easily.

【００７４】実施例９．図９はこの発明の第９の実施例
による単結晶引上装置の構成を示す上面図である。この
実施例では、磁極４２を単結晶引上部１００のチャンバ
１２の外形形状に合わせた形状にした装置において、２
３ａで示す磁界発生部２００の移動用の移動用レールを
設けた。これにより磁界発生部２００は、励磁を行わな
いときには単結晶引上部１００から離れる方向にそれぞ
れ両側に移動可能であり、単結晶引上部１００のチャン
バ１２内のメンテナンスがより容易に行うことができ
る。なお、移動用レール２３ａが移動機構を構成する。Example 9. FIG. 9 is a top view showing the structure of a single crystal pulling apparatus according to the ninth embodiment of the present invention. In this embodiment, in the device in which the magnetic pole 42 is shaped to match the outer shape of the chamber 12 of the single crystal pulling upper portion 100, 2
A moving rail for moving the magnetic field generation unit 200 indicated by 3a is provided. Accordingly, the magnetic field generator 200 can be moved to both sides in the direction away from the single crystal pulling upper portion 100 when the excitation is not performed, and the maintenance of the chamber 12 of the single crystal pulling upper portion 100 can be performed more easily. The moving rail 23a constitutes a moving mechanism.

【００７５】実施例１０．図１０はこの発明の第１０の
実施例による単結晶引上装置の構成を示す透視正面図で
ある。図１０において磁界発生部２００はヒータ３の外
側で単結晶引上部１００のチャンバ１２の内側に設置さ
れる。なお、磁界発生部２００はヒータ３からの熱に対
してコイル１０を断熱するための、冷却水等で冷却され
る冷却機能付外槽１８ａが必要である。これにより単結
晶原料融液１とコイル１０との距離が従来の単結晶引上
装置と比較して短いため、より小さい起磁力で所望の磁
界が得られる。Example 10. FIG. 10 is a perspective front view showing the structure of a single crystal pulling apparatus according to the tenth embodiment of the present invention. In FIG. 10, the magnetic field generator 200 is installed outside the heater 3 and inside the chamber 12 of the single crystal pulling upper part 100. The magnetic field generation unit 200 needs the outer tank 18a with a cooling function for insulating the coil 10 from heat from the heater 3 and cooled with cooling water or the like. As a result, the distance between the single crystal raw material melt 1 and the coil 10 is shorter than that in the conventional single crystal pulling apparatus, so that a desired magnetic field can be obtained with a smaller magnetomotive force.

【００７６】以上は水平方向の磁界を発生する単結晶引
上装置の実施例について説明したが、以下にカスプ磁界
等を発生する、ルツボの上側と下側の位置にそれぞれ設
けられた種結晶の引上げ方向を巻軸とするコイルを備え
た単結晶引上装置の実施例について説明する。The embodiments of the single crystal pulling apparatus for generating a horizontal magnetic field have been described above. However, the seed crystals of the seed crystals provided above and below the crucible for generating a cusp magnetic field and the like will be described below. An example of a single crystal pulling apparatus equipped with a coil having a winding axis in the pulling direction will be described.

【００７７】実施例１１．図１１はこの発明の第１１の
実施例による単結晶引上装置の構成を示す透視正面図で
ある。図１１において、磁界発生部２００は単結晶引上
部１００のチャンバ１２に直接取付けられている。ま
た、磁界発生部２００は、チャンバ１２の外壁のルツボ
２の上側と下側の位置にそれぞれ設けられた、種結晶４
の引上げ方向を巻軸とする２つのコイル１０からなる。
結晶成長を行う場合は、これらのコイル１０に通電し
て、１１で示すようなカスプ磁界をルツボ２内の単結晶
材料融液１に作用させる。この実施例では、チャンバ１
２内の装置のメンテナンスを行う場合、チャンバ１２と
一緒に磁界発生部２００を取除くことができるので、単
結晶引上装置のメンテナンスを容易に行うことができ
る。Example 11. FIG. 11 is a perspective front view showing the structure of a single crystal pulling apparatus according to the eleventh embodiment of the present invention. In FIG. 11, the magnetic field generator 200 is directly attached to the chamber 12 of the single crystal pulling upper portion 100. Further, the magnetic field generators 200 are provided on the outer wall of the chamber 12 at positions above and below the crucible 2 respectively.
It is composed of two coils 10 whose winding axes are in the pulling direction.
When performing crystal growth, these coils 10 are energized to apply a cusp magnetic field 11 to the single crystal material melt 1 in the crucible 2. In this example, chamber 1
When the apparatus inside 2 is to be maintained, the magnetic field generating unit 200 can be removed together with the chamber 12, so that the maintenance of the apparatus for pulling a single crystal can be easily performed.

【００７８】実施例１２．図１２はこの発明の第１２の
実施例による単結晶引上装置の構成を示す透視正面図で
ある。この実施例では、カスプ磁界を発生する磁界発生
部２００が超電導マグネットからなり、超電導コイル１
３、１４はチャンバ１２の周囲一周に渡って延びる保冷
容器１７内に一緒に納められている。さらにこの磁界発
生部２００は固定金具３４によってチャンバ１２に固定
されている。このため、チャンバ１２と磁界発生部２０
０との間の隙間を大きくとる必要なく、メインテナンス
が容易であると共に磁界発生部を小型にできる。Example 12. FIG. 12 is a perspective front view showing the structure of a single crystal pulling apparatus according to the twelfth embodiment of the present invention. In this embodiment, the magnetic field generator 200 for generating a cusp magnetic field is made of a superconducting magnet, and the superconducting coil 1
3, 14 are housed together in a cool container 17 that extends around the circumference of the chamber 12. Further, the magnetic field generator 200 is fixed to the chamber 12 by a fixing fitting 34. Therefore, the chamber 12 and the magnetic field generation unit 20
Since it is not necessary to make a large gap with 0, maintenance is easy and the magnetic field generator can be made small.

【００７９】実施例１３．図１３はこの発明の第１３の
実施例による単結晶引上装置の構成を示す透視正面図で
ある。この実施例では、磁界発生部２００の保冷容器１
７の内壁と単結晶引上部１００のチャンバ１２の外壁を
共有するように、すなわちチャンバ１２と保冷容器１７
を一体に形成した。これにより磁界発生部２００の内径
が実施例１２のものよりさらに小さく設計することがで
きる。Example 13. FIG. 13 is a perspective front view showing the structure of a single crystal pulling apparatus according to the 13th embodiment of the present invention. In this embodiment, the cold storage container 1 of the magnetic field generator 200 is
7 and the outer wall of the chamber 12 of the single crystal pulling portion 100, that is, the chamber 12 and the cold container 17
Was integrally formed. As a result, the inner diameter of the magnetic field generator 200 can be designed to be smaller than that of the twelfth embodiment.

【００８０】実施例１４．図１４はこの発明の第１４の
実施例による単結晶引上装置の構成を示す透視正面図で
ある。図において、３６は磁界発生部２００の保冷容器
１７の超電導コイル１３と１４の間に設けられた開口
で、単結晶引上部１００のチャンバ１２のこの開口３６
に当たる部分に設けられた透視窓３７を通じて、チャン
バ１２内部を観察することができる。Example 14. FIG. 14 is a perspective front view showing the structure of a single crystal pulling apparatus according to the 14th embodiment of the present invention. In the figure, 36 is an opening provided between the superconducting coils 13 and 14 of the cold insulation container 17 of the magnetic field generation unit 200, and this opening 36 of the chamber 12 of the single crystal pulling upper portion 100.
The inside of the chamber 12 can be observed through the see-through window 37 provided in the portion corresponding to the.

【００８１】実施例１５．図１５はこの発明の第１５の
実施例による単結晶引上装置の超電導コイルと電源との
接続を示す図である。図１５の(ａ)および(ｂ)におい
て、超電導コイル１３、１４は同一方向に巻回されてい
る。そして図１５の(ａ)では、極性が反対になるように
可変直流電源３２が接続されており、図１５の(ｂ)では
同一極性になるように可変直流電源３２が接続されてい
る。これにより、図１５の(ａ)の結線においては、カス
プ磁界を得ることができ、図１５の(ｂ)のごとき結線で
は引上方向の磁界を発生させることができる。このた
め、このような構造で、プロセスの自由度を広くとるこ
とができる。なお、可変直流電源３２および結線３５が
第２の励磁手段を構成する。Example 15 FIG. 15 is a diagram showing a connection between a superconducting coil and a power source of a single crystal pulling apparatus according to a fifteenth embodiment of the present invention. In FIGS. 15A and 15B, the superconducting coils 13 and 14 are wound in the same direction. In FIG. 15A, the variable DC power supply 32 is connected so that the polarities are opposite, and in FIG. 15B, the variable DC power supply 32 is connected so as to have the same polarity. Thus, a cusp magnetic field can be obtained in the connection of FIG. 15A, and a pull-up magnetic field can be generated in the connection of FIG. 15B. Therefore, with such a structure, the degree of freedom of the process can be widened. The variable DC power supply 32 and the connection 35 form the second exciting means.

【００８２】実施例１６．図１６はこの発明の第１６の
実施例による単結晶引上装置の構成を示す透視正面図で
ある。図において、３５ａは超電導コイル１３、１４と
室温部分の端子３８を結ぶリード線である。リード線３
５ａは低温コイルと接続されているため、極力熱侵入が
小さくなるように設計されている。すなわち１本のリー
ド線３５ａは２つの超伝導コイル１３、１４で共有され
ている。また、図１７は可変直流電源３２ａ、３２ｂと
の接続を示す図で、可変直流電源３２ｂは全体の励磁電
流を調整し、可変直流電源３２ａは２つの超電導コイル
１３、１４に流れる励磁電流の比率を調整する。これに
より、カスプ磁界の上下の強度分布を調整し、それによ
って結晶成長プロセスの最適化を図ることが可能であ
る。そして、超電導マグネットの部分への熱侵入量が２
５％低減できる。なお、可変直流電源３２ａ、３２ｂお
よびリード線３５ａが第３の励磁手段を構成する。Example 16 FIG. 16 is a perspective front view showing the structure of a single crystal pulling apparatus according to the 16th embodiment of the present invention. In the figure, 35a is a lead wire connecting the superconducting coils 13 and 14 to the terminal 38 at the room temperature. Lead wire 3
Since 5a is connected to the low temperature coil, it is designed so that heat intrusion is minimized. That is, one lead wire 35 a is shared by the two superconducting coils 13 and 14. FIG. 17 is a diagram showing the connection with the variable DC power supplies 32a and 32b. The variable DC power supply 32b adjusts the entire exciting current, and the variable DC power supply 32a is the ratio of the exciting currents flowing through the two superconducting coils 13 and 14. Adjust. This makes it possible to adjust the intensity distribution above and below the cusp magnetic field, thereby optimizing the crystal growth process. And the amount of heat penetration into the superconducting magnet is 2
It can be reduced by 5%. The variable DC power supplies 32a and 32b and the lead wire 35a form a third exciting means.

【００８３】実施例１７．図１８はこの発明の第１７の
実施例による単結晶引上装置の超電導コイルと可変直流
電源との接続を示す図である。この実施例では実施例１
６の実施例において、特にリード線の内、中間のリード
線３５ｂは、リード線３５ａと比して約５０％の通電容
量(定格電流)を持たせる。この結果、図１９に示すよう
に片側の超電導コイルを１００％励磁しているとき、も
う一方の超伝導コイルは最少５０％まで小さい値で励磁
できる。図１９において、Ａはコイル最大励磁電流、Ｂ
は一方のコイルを最大励磁電流で励磁した時の他方のコ
イルの最小励磁電流を示す。このことより結晶成長プロ
セスの制御範囲がひろがり、かつ実施例１６と比較し
て、約８３％まで、リード線から超電導コイルへの侵入
熱量を低減できる。Example 17 FIG. 18 is a diagram showing a connection between a superconducting coil and a variable DC power source of a single crystal pulling apparatus according to a seventeenth embodiment of the present invention. In this example, Example 1
In the sixth embodiment, in particular, the lead wire 35b in the middle of the lead wires has a current carrying capacity (rated current) of about 50% as compared with the lead wire 35a. As a result, as shown in FIG. 19, when one side of the superconducting coil is 100% excited, the other side of the superconducting coil can be excited with a minimum value of 50%. In FIG. 19, A is the coil maximum excitation current, and B is
Indicates the minimum exciting current of the other coil when one coil is excited with the maximum exciting current. As a result, the control range of the crystal growth process is expanded, and the amount of heat penetrating from the lead wire to the superconducting coil can be reduced to about 83% as compared with Example 16.

【００８４】なお、この発明はこれらの上記実施例に限
定されるものではなく、またこれらの実施例の可能な組
み合わせも含む。The present invention is not limited to the above-mentioned embodiments, and includes possible combinations of these embodiments.

【００８５】[0085]

【発明の効果】以上のように、この発明の第１の発明で
は、ルツボに充填された単結晶原料融液に種結晶を挿入
し、この種結晶を引き上げることにより単結晶を生成す
る単結晶引上部と、この単結晶引上部の両側に設けられ
たコイルを含み、単結晶原料融液部に水平方向の磁界を
与える磁界発生部と、からなる単結晶引上装置におい
て、磁界発生部のコイルをそれぞれ単結晶引上部に取り
付ける支持構造を設けたので、従来に比べて小さい起磁
力で単結晶原料融液に同じ磁界を発生でき、省電力にな
り、さらに構造が簡略化された安価な単結晶引上装置を
提供できる等の効果が得られる。As described above, according to the first aspect of the present invention, a single crystal is formed by inserting a seed crystal into a single crystal raw material melt filled in a crucible and pulling the seed crystal. In a single crystal pulling apparatus comprising a pulling part and a magnetic field generating part including coils provided on both sides of the single crystal pulling part and applying a horizontal magnetic field to the single crystal raw material melt part, Since the support structure for attaching the coils to the upper part of the single crystal is provided, the same magnetic field can be generated in the single crystal raw material melt with a smaller magnetomotive force compared to the conventional one, resulting in power saving and further simplification of the structure and low cost. It is possible to obtain effects such as providing a single crystal pulling apparatus.

【００８６】またこの発明の第２の発明では、磁界発生
部のコイルを単結晶引上部のチャンバの外形形状に沿わ
せた形状にしたので、軽量で、従来に比べて小さい起磁
力で単結晶原料融液に同じ磁界を発生でき、省電力にな
るとともに漏れ磁界が減少した単結晶引上装置を提供で
きる等の効果が得られる。Further, in the second aspect of the present invention, the coil of the magnetic field generating portion is shaped to conform to the outer shape of the chamber above the single crystal, so that the single crystal is lightweight and has a smaller magnetomotive force than the conventional one. The same magnetic field can be generated in the raw material melt, and it is possible to provide an effect such as a power saving and a single crystal pulling apparatus with a reduced leakage magnetic field.

【００８７】またこの発明の第３の発明では、磁界発生
部が両側のコイルの間に延びるリターンヨークを含むも
のにおいて、第１または第２の発明を実施したので、軽
量で、従来に比べて小さい起磁力で単結晶原料融液に同
じ磁界を発生でき、省電力になるとともに漏れ磁界が減
少し、さらに構造が簡略化された安価な単結晶引上装置
を提供できる等の効果が得られる。Further, in the third invention of the present invention, the magnetic field generating portion includes the return yoke extending between the coils on both sides, so that the first or second invention is carried out, so that the magnetic field generating portion is lighter in weight than the conventional one. The same magnetic field can be generated in the single crystal raw material melt with a small magnetomotive force, which saves power, reduces the leakage magnetic field, and can provide an inexpensive single crystal pulling apparatus with a simplified structure. .

【００８８】またこの発明の第４の発明では、上記第１
または第２の発明において、磁界発生部のコイルを超電
導マグネットとしたので、軽量で、従来に比べて小さい
起磁力で単結晶原料融液に同じ磁界を発生でき、省電力
になるとともに漏れ磁界が減少し、さらに構造が簡略化
され、さらに超電導マグネットが安価にできる単結晶引
上装置を提供できる等の効果が得られる。According to a fourth aspect of the present invention, the first aspect
Alternatively, in the second invention, since the coil of the magnetic field generation unit is a superconducting magnet, it is lightweight and can generate the same magnetic field in the single crystal raw material melt with a smaller magnetomotive force than the conventional one, resulting in power saving and a leakage magnetic field. It is possible to provide an effect such that a single crystal pulling apparatus can be provided in which the number is reduced, the structure is further simplified, and the cost of the superconducting magnet can be reduced.

【００８９】またこの発明の第５の発明では、単結晶引
上部の両側の磁界発生部のコイルに別々の励磁電流を与
える第１の励磁手段を備えたことにより、ルツボ形状や
ヒータ強度の不均一差による結晶の成長不良を磁界の不
均一で補償でき、結晶製造上のプロセスの自由度を広く
とることができる単結晶引上装置を提供できる等の効果
が得られる。Further, in the fifth aspect of the present invention, since the first exciting means for applying different exciting currents to the coils of the magnetic field generating portions on both sides of the upper portion of the single crystal is provided, the crucible shape and the heater strength are not affected. The crystal growth failure due to the uniformity difference can be compensated by the non-uniformity of the magnetic field, and a single crystal pulling apparatus capable of widening the degree of freedom in the crystal manufacturing process can be provided.

【００９０】またこの発明の第６の発明では、磁界発生
部のコイルの磁極をそれぞれ単結晶引上部のチャンバの
外形形状に沿わせた形状にしたので、従来に比べて小さ
い起磁力で単結晶原料融液に同じ磁界を発生でき、省電
力になるとともに漏れ磁界が減少し、また磁界均一性も
改善された単結晶引上装置を提供できる等の効果が得ら
れる。Further, in the sixth aspect of the present invention, the magnetic poles of the coil of the magnetic field generating portion are shaped to conform to the outer shape of the chamber above the single crystal, so that the single crystal has a smaller magnetomotive force than the conventional one. The same magnetic field can be generated in the raw material melt, power consumption is reduced, the leakage magnetic field is reduced, and a single crystal pulling apparatus having improved magnetic field uniformity can be provided.

【００９１】またこの発明の第７の発明では、磁界発生
部が、両側のコイルの間に延びるリターンヨークを含む
ものおいて第６の発明を実施したので、同様に従来に比
べて小さい起磁力で単結晶原料融液に同じ磁界を発生で
き、省電力になるとともに漏れ磁界が減少し、また磁界
均一性も改善された単結晶引上装置を提供できる等の効
果が得られる。Further, in the seventh invention of the present invention, the magnetic field generating portion includes the return yoke extending between the coils on both sides. Therefore, the magnetomotive force is smaller than that of the conventional one. Thus, the same magnetic field can be generated in the single crystal raw material melt, the power consumption is reduced, the leakage magnetic field is reduced, and the single crystal pulling apparatus with improved magnetic field uniformity can be obtained.

【００９２】またこの発明の第８の発明では、磁界発生
部のコイルをそれぞれ単結晶引上部に取り付ける支持構
造を設けたので、さらに構造が簡略化された単結晶引上
装置を提供できる等の効果が得られる。Further, in the eighth aspect of the present invention, since the supporting structure for attaching the coils of the magnetic field generating part to the upper portion of the single crystal pulling portion is provided, a single crystal pulling apparatus having a further simplified structure can be provided. The effect is obtained.

【００９３】またこの発明の第９の発明では、単結晶引
上部の両側の磁界発生部のコイルを単結晶引上部から引
き離す方向に移動させる移動機構を設けたので、単結晶
引上部のチャンバ内のメインテナンスが容易な単結晶引
上装置を提供できる等の効果が得られる。Further, according to the ninth aspect of the present invention, since the moving mechanism for moving the coils of the magnetic field generating portions on both sides of the single crystal pulling upper portion in the direction of separating from the single crystal pulling upper portion, the inside of the chamber of the single crystal pulling upper portion is provided. It is possible to provide an effect such as to provide a single crystal pulling apparatus that is easy to maintain.

【００９４】またこの発明の第１０の発明では、磁界発
生部を、単結晶引上部のチャンバ内に設けるようにした
ので、従来に比べて小さい起磁力で単結晶原料融液に同
じ磁界を発生でき、省電力になるとともに漏れ磁界が減
少し、さらに構造が簡略化された単結晶引上装置を提供
できる等の効果が得られる。In the tenth aspect of the present invention, since the magnetic field generating portion is provided in the chamber above the single crystal pulling portion, the same magnetic field is generated in the single crystal raw material melt with a smaller magnetomotive force than in the conventional case. As a result, it is possible to obtain power saving, reduce the leakage magnetic field, and provide a single crystal pulling apparatus having a simplified structure.

【００９５】またこの発明の第１１の発明では、ルツボ
に充填された単結晶原料融液に種結晶を挿入し、この種
結晶を引き上げることにより単結晶を生成する単結晶引
上部と、ルツボの上側と下側の位置にそれぞれ設けられ
た種結晶の引上げ方向を巻軸とするコイルを含み、単結
晶原料融液部にカスプ磁界を発生する磁界発生部と、か
らなる単結晶引上装置において、磁界発生部を、単結晶
引上部のチャンバ外壁に固定するようにしたので、従来
に比べて小さい起磁力で単結晶原料融液に同じ磁界を発
生でき、省電力になるとともに漏れ磁界が減少し、さら
にメインテナンスが容易な単結晶引上装置を提供できる
等の効果が得られる。According to an eleventh aspect of the present invention, a single crystal pulling part for producing a single crystal by inserting a seed crystal into the single crystal raw material melt filled in the crucible and pulling the seed crystal, and the crucible In a single crystal pulling apparatus comprising a coil having a winding direction of the pulling direction of the seed crystal provided in the upper and lower positions respectively, a magnetic field generating section for generating a cusp magnetic field in the single crystal raw material melt section, and Since the magnetic field generation part is fixed to the outer wall of the chamber above the single crystal, the same magnetic field can be generated in the single crystal raw material melt with a smaller magnetomotive force compared to the conventional one, which saves power and reduces the leakage magnetic field. In addition, it is possible to obtain an effect such that a single crystal pulling apparatus that is easy to maintain can be provided.

【００９６】またこの発明の第１２の発明では、磁界発
生部が超電導マグネットからなり、コイルをまとめて納
める保冷容器を含み、この保冷容器を単結晶引上部のチ
ャンバに固定するようにしたので、磁界発生部が超電導
マグネットで構成される装置において、従来に比べて小
さい起磁力で単結晶原料融液に同じ磁界を発生でき、省
電力になるとともに漏れ磁界が減少し、さらにメインテ
ナンスが容易な単結晶引上装置を提供できる等の効果が
得られる。Further, in the twelfth aspect of the present invention, the magnetic field generating portion is made of a superconducting magnet, and includes a cold insulation container for accommodating the coils together, and the cold insulation container is fixed to the chamber above the single crystal. In a device in which the magnetic field generator is composed of a superconducting magnet, the same magnetic field can be generated in the single crystal raw material melt with a smaller magnetomotive force than in the past, which saves power, reduces the leakage magnetic field, and is easy to maintain. The effect that a crystal pulling apparatus can be provided can be obtained.

【００９７】またこの発明の第１３の発明では、第１２
の発明においてさらにチャンバと保冷容器を一体に形成
したので、さらに装置の小形化がなされた単結晶引上装
置を提供できる等の効果が得られる。In the thirteenth invention of the present invention, the twelfth invention
In the invention of claim 1, since the chamber and the cold-retaining container are integrally formed, it is possible to obtain an effect such as providing a single crystal pulling apparatus in which the apparatus is further downsized.

【００９８】またこの発明の第１４の発明では、保冷容
器のコイルとコイルの間の部分に開口を設け、さらにチ
ャンバの開口に当たる部分に融液観察用の透視窓を設け
たので、チャンバ内の観察が可能な単結晶引上装置を提
供できる等の効果が得られる。Further, in the fourteenth aspect of the present invention, an opening is provided in the portion of the cold insulation container between the coils, and a transparent window for observing the melt is provided in the portion corresponding to the opening of the chamber. The effect of providing an observable single crystal pulling apparatus can be obtained.

【００９９】またこの発明の第１５の発明では、上下の
コイルに別々の極性の電流を流す第２の励磁手段を設け
たので、カスプ磁界と種結晶の引上方向の磁界を選択的
に発生でき、これにより結晶製造上のプロセスの自由度
を広げた単結晶引上装置を提供できる等の効果が得られ
る。Further, in the fifteenth aspect of the present invention, since the upper and lower coils are provided with the second exciting means for supplying currents of different polarities, the cusp magnetic field and the magnetic field in the pull-up direction of the seed crystal are selectively generated. As a result, it is possible to provide an effect such that a single crystal pulling apparatus that widens the degree of freedom in the crystal manufacturing process can be provided.

【０１００】またこの発明の第１６の発明では、２つの
可変直流電源と１本を共有する３本のリード線で上下の
コイルに別々の値の電流を流し、２つの可変直流電源の
一方で全体の励磁電流を調整し、他方でコイルに流れる
励磁電流の比率を調整する第３の励磁手段を設けたの
で、結晶製造上のプロセスの自由度を広げると共に超電
導コイル部分への熱侵入量が２５％低減できる単結晶引
上装置を提供できる等の効果が得られる。According to the sixteenth invention of the present invention, three lead wires sharing one wire with two variable DC power supplies, currents of different values are supplied to the upper and lower coils, and one of the two variable DC power supplies is supplied. Since the third exciting means for adjusting the exciting current of the whole and adjusting the ratio of the exciting current flowing through the coil on the other hand are provided, the degree of freedom of the process for manufacturing the crystal is increased and the amount of heat entering the superconducting coil portion is increased. Effects such as the provision of a single crystal pulling apparatus capable of reducing by 25% can be obtained.

【０１０１】またこの発明の第１７の発明では、３本の
リード線のうち１本の定格電流が他の２本のリード線の
定格電流の約５０％であるようにしたので、超電導マグ
ネットに侵入する熱を小さくでき、プロセスの自由度を
損なわない範囲で超電導マグネットの維持費をさらに低
減することのできる単結晶引上装置を提供できる等の効
果が得られる。In the seventeenth aspect of the present invention, one of the three lead wires has a rated current of about 50% of the rated current of the other two lead wires. It is possible to provide a single crystal pulling apparatus that can reduce the heat that enters and can further reduce the maintenance cost of the superconducting magnet within the range that does not impair the degree of freedom of the process.

[Brief description of drawings]

【図１】この発明の実施例１による単結晶引上装置の
構成を示す上面図である。FIG. 1 is a top view showing the configuration of a single crystal pulling apparatus according to a first embodiment of the present invention.

【図２】この発明の実施例２による単結晶引上装置の
構成を示す上面図である。FIG. 2 is a top view showing the configuration of a single crystal pulling apparatus according to Example 2 of the present invention.

【図３】この発明の実施例３による単結晶引上装置の
構成を示す上面図である。FIG. 3 is a top view showing the configuration of a single crystal pulling apparatus according to Example 3 of the present invention.

【図４】この発明の実施例４による単結晶引上装置の
構成を示す上面図である。FIG. 4 is a top view showing the configuration of a single crystal pulling apparatus according to Example 4 of the present invention.

【図５】この発明の実施例５による単結晶引上装置の
構成を示す上面図である。FIG. 5 is a top view showing the configuration of a single crystal pulling apparatus according to Example 5 of the present invention.

【図６】この発明の実施例６による単結晶引上装置の
構成を示す上面図である。FIG. 6 is a top view showing the configuration of a single crystal pulling apparatus according to Example 6 of the present invention.

【図７】この発明の実施例７による単結晶引上装置の
構成を示す上面図である。FIG. 7 is a top view showing the configuration of a single crystal pulling apparatus according to Example 7 of the present invention.

【図８】この発明の実施例８による単結晶引上装置の
構成を示す上面図である。FIG. 8 is a top view showing the configuration of a single crystal pulling apparatus according to Example 8 of the present invention.

【図９】この発明の実施例９による単結晶引上装置の
構成を示す上面図である。FIG. 9 is a top view showing the configuration of a single crystal pulling apparatus according to Example 9 of the present invention.

【図１０】この発明の実施例１０による単結晶引上装
置の構成を示す透視正面図である。FIG. 10 is a perspective front view showing the configuration of a single crystal pulling apparatus according to Example 10 of the present invention.

【図１１】この発明の実施例１１による単結晶引上装
置の構成を示す透視正面図である。FIG. 11 is a perspective front view showing the configuration of a single crystal pulling apparatus according to Example 11 of the present invention.

【図１２】この発明の実施例１２による単結晶引上装
置の構成を示す透視正面図である。FIG. 12 is a perspective front view showing the structure of a single crystal pulling apparatus according to Example 12 of the present invention.

【図１３】この発明の実施例１３による単結晶引上装
置の構成を示す透視正面図である。FIG. 13 is a perspective front view showing the configuration of a single crystal pulling apparatus according to Example 13 of the present invention.

【図１４】この発明の実施例１４による単結晶引上装
置の構成を示す透視正面図である。FIG. 14 is a perspective front view showing the configuration of a single crystal pulling apparatus according to Example 14 of the present invention.

【図１５】この発明の実施例１５による単結晶引上装
置の超電導コイルと電源との接続を示す図である。FIG. 15 is a diagram showing a connection between a superconducting coil and a power supply of a single crystal pulling apparatus according to Example 15 of the present invention.

【図１６】この発明の実施例１６による単結晶引上装
置の構成を示す透視正面図である。FIG. 16 is a perspective front view showing the configuration of a single crystal pulling apparatus according to Example 16 of the present invention.

【図１７】図１６の単結晶引上装置の超電導コイルと
電源との接続を示す図である。17 is a diagram showing a connection between a superconducting coil and a power source of the single crystal pulling apparatus of FIG.

【図１８】この発明の実施例１７による単結晶引上装
置の超電導コイルと電源との接続を示す図である。FIG. 18 is a diagram showing a connection between a superconducting coil and a power source of a single crystal pulling apparatus according to Example 17 of the present invention.

【図１９】この発明の実施例１７の単結晶の励磁電流
の可能範囲を示す図である。FIG. 19 is a diagram showing a possible range of exciting current for a single crystal according to Example 17 of the present invention.

【図２０】従来の単結晶引上装置の一例を示す構成図
である。FIG. 20 is a configuration diagram showing an example of a conventional single crystal pulling apparatus.

【図２１】図２１の単結晶引上装置の原理を説明する
構成図である。21 is a configuration diagram illustrating the principle of the single crystal pulling apparatus of FIG. 21. FIG.

【図２２】超電導マグネットを備えた従来の単結晶引
上装置の一例を示す正面図である。FIG. 22 is a front view showing an example of a conventional single crystal pulling apparatus including a superconducting magnet.

【図２３】図２２の単結晶引上装置の上面図である。23 is a top view of the single crystal pulling apparatus of FIG. 22. FIG.

【図２４】超電導マグネットを備えた従来の単結晶引
上装置の別の例を示す正面図である。FIG. 24 is a front view showing another example of a conventional single crystal pulling apparatus including a superconducting magnet.

【図２５】図２４の単結晶引上装置の上面図である。25 is a top view of the single crystal pulling apparatus of FIG. 24. FIG.

【図２６】従来の単結晶引上装置の別の例を示す正面
図である。FIG. 26 is a front view showing another example of a conventional single crystal pulling apparatus.

【図２７】カスプ磁界を与えた単結晶引上装置のルツ
ボとルツボ内の融液の状態の一例を示す図である。FIG. 27 is a diagram showing an example of a state of a crucible and a melt in the crucible of a single crystal pulling apparatus to which a cusp magnetic field is applied.

【図２８】カスプ磁界を与えた単結晶引上装置のルツ
ボとルツボ内の融液の状態の別の例を示す図である。FIG. 28 is a diagram showing another example of the state of the crucible of the single crystal pulling apparatus to which a cusp magnetic field is applied and the melt in the crucible.

[Explanation of symbols]

１単結晶原料融液、２ルツボ、３ヒータ、４種
結晶、７単結晶、１０コイル、１２チャンバ、１
３、１４、３１超電導コイル、１７、１７ａ、１７ｂ
保冷容器、１８ａ冷却機能付外槽、３０支持構
造、３２、３２ａ、３２ｂ可変直流電源、３４固定
金具、３６開口、３７透視窓、４１リターンヨー
ク、４２磁極、１００単結晶引上部、２００磁界
発生部、２０１、２０２超電導マグネット。1 single crystal raw material melt, 2 crucible, 3 heater, 4 seed crystal, 7 single crystal, 10 coil, 12 chamber, 1
3, 14, 31 Superconducting coil, 17, 17a, 17b
Cooling container, 18a Outer tank with cooling function, 30 Support structure, 32, 32a, 32b Variable DC power supply, 34 Fixing metal fitting, 36 opening, 37 Transparent window, 41 Return yoke, 42 Magnetic pole, 100 Single crystal pulling top, 200 Magnetic field generation , 201, 202 Superconducting magnet.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献特開昭59−195595（ＪＰ，Ａ) 特開昭60−16891（ＪＰ，Ａ) 特開昭59−121185（ＪＰ，Ａ) 特開昭60−171292（ＪＰ，Ａ) 特開昭62−3093（ＪＰ，Ａ) 特開昭63−285189（ＪＰ，Ａ) 特開平４−12083（ＪＰ，Ａ) 特開昭58−217493（ＪＰ，Ａ) 特開昭61−222984（ＪＰ，Ａ) 特開平６−92774（ＪＰ，Ａ) 実開昭63−71511（ＪＰ，Ｕ) 実開昭62−79882（ＪＰ，Ｕ) 欧州特許出願公開628645（ＥＰ，Ａ１) (58)調査した分野(Int.Cl.⁷，ＤＢ名) C30B 1/00 - 35/00 ─────────────────────────────────────────────────── --- Continuation of the front page (56) Reference JP-A-59-195595 (JP, A) JP-A-60-16891 (JP, A) JP-A-59-121185 (JP, A) JP-A-60- 171292 (JP, A) JP 62-3093 (JP, A) JP 63-285189 (JP, A) JP 4-12083 (JP, A) JP 58-217493 (JP, A) JP 61-222984 (JP, A) JP 6-92774 (JP, A) JP 63-71511 (JP, U) JP 62-79882 (JP, U) European Patent Application Publication 628645 ( EP, A 1) (58) Fields investigated (Int.Cl. ⁷ , DB name) C30B 1/00-35/00

Claims

(57) [Claims]

1. A single crystal pulling portion for producing a single crystal by inserting a seed crystal into a single crystal raw material melt filled in a crucible and a pair of both sides of this single crystal pulling upper portion . it comprises a coil provided in a magnetic field generator for applying a magnetic field in the horizontal direction in the single crystal raw material melt unit, in a single crystal pulling apparatus comprising a carp coil of the magnetic field generator
The above-mentioned single crystal pulling upper part receives the attractive force generated between the
1. A single crystal pulling apparatus having a support structure attached to both sides outside the chamber .

2. The single crystal pulling apparatus according to claim 1, wherein the coil of the magnetic field generating portion has a shape conforming to the outer shape of the chamber above the single crystal pulling portion.

3. The single crystal pulling apparatus according to claim 1, wherein the coil of the magnetic field generating section is made of a superconducting magnet.

Wherein either said single crystal pulling portion on both sides of the claims 1 to 3, further comprising a first exciting means for applying the coil to separate the excitation current of the magnetic field generating unit 1
Item 10. A single crystal pulling apparatus according to item .

5. The magnetic poles of the coils of the magnetic field generator are respectively
Re single crystal pulling apparatus according to claim 1, characterized in that it has a shape along a contour of Chang bus of the single crystal pulling portion.

Wherein said magnetic field generating portion, wherein characterized in that it comprises a return yoke extending between the opposite sides of the coil
Item 1. The single crystal pulling apparatus according to any one of items 1, 2, 4 and 5 .

7. The single crystal pulling apparatus according to claim 5 , further comprising a moving mechanism for moving the coils of the magnetic field generating portions on both sides of the single crystal pulling upper section in a direction in which the coils are separated from the single crystal pulling upper section. Upper device.

8. A single crystal pulling part for producing a single crystal by inserting a seed crystal into a single crystal raw material melt filled in a crucible, and a position above and below the crucible. In a single crystal pulling apparatus comprising a coil having a winding axis in the pulling direction of the seed crystal respectively provided, and a magnetic field generating section for generating a cusp magnetic field in the single crystal raw material melt section, the magnetic field generating section is A single crystal pulling apparatus, wherein the single crystal pulling apparatus is fixed to the outer wall of the chamber above the single crystal pulling section.

9. The magnetic field generator is made of superconducting magnet includes a cold container pay together the coil, according to claim 8, the cold container is characterized in that it is fixed to the chamber of the single crystal pulling portion The single crystal pulling apparatus described in 1.

10. The apparatus for pulling a single crystal according to claim 9 , wherein the chamber and the cold insulation container are integrally formed.

11. an opening in a portion between the coil and the coil of the cold container, to claim 9 or 10, characterized in that a transparent window for melt observation portion corresponding to the opening of the chamber The single crystal pulling apparatus described.

12. comprising a second exciting means for flowing the current of the coil to separate polarity of the upper and lower claims, characterized in that selectively generates a magnetic field in the pulling direction of the cusp magnetic field and the seed crystal 9 12. The single crystal pulling apparatus according to any one of 1 to 11 .

13. An electric current of different value is made to flow through the upper and lower coils by three lead wires sharing one with two variable DC power supplies, and the whole exciting current is adjusted by one of the two variable DC power supplies, to 9 claims, characterized in that with a third excitation means for adjusting the ratio of the exciting current flowing through the coil in the other
Item 11. The single crystal pulling apparatus according to any one of items 11 .

14. The single crystal pull-up according to claim 13 , wherein the rated current of one of the three lead wires is about 50% of the rated current of the other two lead wires. apparatus.