JP3476385B2 - Resin composition for semiconductor encapsulation, semiconductor device using the same, and method of manufacturing semiconductor device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for semiconductor encapsulation excellent in flame resistance, solder resistance, moisture resistance reliability and fluidity, a semiconductor device using the same, and a method for manufacturing a semiconductor device. is there.

[0002]

2. Description of the Related Art Conventionally, semiconductor elements such as transistors, ICs, and LSIs have been encapsulated with ceramics or the like to be semiconductor devices, but recently, from the viewpoint of cost and mass productivity, resin-encapsulated type using plastics. Semiconductor devices have become mainstream. An epoxy resin composition has been conventionally used for this type of resin encapsulation, and has achieved good results. However, technological innovations in the semiconductor field have led to an increase in the degree of integration and an increase in the size of elements and miniaturization of wiring.
There is a tendency for packages to become smaller and thinner, and there is a demand for further improvement in the reliability of sealing materials.

On the other hand, it is essential for electronic parts such as semiconductor devices to comply with UL94 V-0, which is a standard of flame retardancy, and conventionally, a resin composition for encapsulating a semiconductor has a flame retarding effect. As a method of doing so, a method of adding a brominated epoxy resin or an antimony compound such as antimony oxide is generally used.

[0004]

However, there are two major problems with the above-mentioned flame retardancy imparting technology.

The first problem is that the harmfulness of the antimony compound itself, the harmfulness to the human body due to the generation of hydrogen bromide, brominated gas, antimony bromide, etc. during combustion, and environmental pollution, and the equipment Corrosion is a problem.

A second problem is that when a semiconductor device employing the above flame retarding technology is left at high temperature for a long time, aluminum wiring on a semiconductor element corrodes due to the effect of liberated bromine, causing a failure of the semiconductor device. As a result, the high temperature reliability is deteriorated.

As described above, the conventional flame-retardant technique has the above-mentioned problems. Therefore, it is a safe material that does not generate a harmful gas at the time of combustion, and is a metal hydroxide when soldering a semiconductor device. Development of flame-retardant technology that does not cause swelling or cracking of semiconductor devices due to dehydration of objects and does not cause corrosion of aluminum wiring on semiconductor elements or deterioration of moisture resistance reliability even if left in a high temperature and high humidity atmosphere for a long period of time Is strongly desired. Therefore, the present applicant proposes a thermosetting resin composition for semiconductor encapsulation in which a metal hydroxide and a metal oxide or a composite metal hydroxide thereof is used together with a thermosetting resin and a curing agent. The above problem was solved (Japanese Patent Application No. 7-507466). By using this thermosetting resin composition for semiconductor encapsulation, the effect of improving flame retardancy and moisture resistance reliability was certainly obtained, but a new problem occurred. That is, although semiconductor packages in recent years tend to be made thinner, moldability such as deformation of gold wires due to deterioration of fluidity of a resin composition as a sealing material during package molding such as transfer molding occurs. The problem is a significant decrease in

The present invention has been made in view of such circumstances, and has a resin composition for semiconductor encapsulation excellent in moisture resistance reliability and flame retardancy as well as excellent fluidity, a semiconductor device using the same, and a semiconductor device using the same. It is intended to provide a manufacturing method of a semiconductor device.

[0009]

In order to achieve the above object, the first aspect of the present invention is a semiconductor encapsulating resin composition containing the following components (a) to (d). (A) Thermosetting resin. (B) Curing agent. (C) A polyhedral complex metal hydroxide represented by the following general formula (1).

Embedded image m (M _a O _b ) · n (Q _d O _e ) · cH ₂ O (1) [In the above formula (1), M and Q are different metal elements, and Q is a period. Table IVa, Va, VIa, VII
It is a metal element belonging to a group selected from a, VIII, Ib, and IIb. In addition, m, n, a, b, c, d, and e are positive numbers, and may have the same value or different values. ] (D) Spherical silica powder.

A second aspect of the present invention is a semiconductor device obtained by encapsulating a semiconductor element using the resin composition for encapsulating a semiconductor.

The present invention also provides a method of manufacturing a semiconductor device, in which a semiconductor element is resin-sealed by a transfer molding method using the above-mentioned resin composition for semiconductor sealing.
A third aspect of the present invention is a method for manufacturing a semiconductor device, in which a semiconductor device is manufactured by using a sheet-shaped sealing material made of the above resin composition for semiconductor sealing.

The complex metal hydroxide having a polyhedral shape, which is the component (c) in the resin composition for semiconductor encapsulation of the present invention, has a hexagonal plate shape as shown in FIG. It does not have a so-called thin plate-like crystal shape such as a scaly shape, but has large crystal growth in the thickness direction (c-axis direction) in both the vertical and horizontal directions. For example, a plate crystal has a thickness direction. A complex metal hydroxide having a granular crystal shape that has grown in the (c-axis direction) and is approximated to a more three-dimensional and spherical shape, for example, a dodecahedron, an octahedron, or a tetrahedron. , Usually a mixture of these. Of course, the above-mentioned polyhedron shape can be approximated to a more three-dimensional and spherical shape by changing the shape of the polyhedron by crushing or grinding in addition to the method of growing crystals. FIG. 1 shows an example of a scanning electron micrograph (magnification: 50,000 times) showing the crystal shape of the polyhedral composite metal hydroxide. As described above, in the present invention, by using the polyhedral composite metal hydroxide, a hexagonal plate having a conventional shape or a plate-like crystal shape such as a scale-like shape is used. It is possible to suppress a decrease in the fluidity of the resin composition as compared with the resin.

The shape of the composite metal hydroxide of the present invention will be described in more detail by taking a substantially octahedral shape as an example. That is, an octahedral shape which is an example of the composite metal hydroxide of the present invention is composed of two parallel base surfaces on the upper and lower sides and six pyramidal surfaces on the outer periphery, and the pyramidal surfaces face upward and inclined. It has an octahedral shape in which inclined surfaces are alternately arranged.

More specifically, a conventional thin plate-shaped crystal having a crystal shape has, for example, a hexagonal crystal structure, and as shown in FIG.
Upper and lower 2 represented by the (00.1) plane in the Bravais index
It is a hexagonal columnar shape whose outer periphery is surrounded by a base surface 10 of the surface and six square cylindrical surfaces 11 belonging to the {10.0} mold surface. And
Since there is little crystal growth in the [001] direction (c-axis direction), it has a thin hexagonal columnar shape.

On the other hand, the composite metal hydroxide of the present invention, as shown in FIG. 4, is obtained by controlling the crystal habit during crystal growth.
Two upper and lower base surfaces 12 represented by the (00 · 1) plane,
The outer periphery is surrounded by six pyramidal surfaces 13 belonging to the {10 · 1} mold surface. The pyramid surface 13 is (10.
It has an octahedral shape having a special crystal habit in which upwardly inclined surfaces 13a such as 1) surfaces and downwardly inclined surfaces 13b such as (10-1) surfaces are alternately arranged. Also, the crystal growth in the c-axis direction is larger than that of the conventional one. Although the shape shown in FIG. 4 is close to a plate shape, FIG. 5 shows that the crystal growth in the c-axis direction further progresses, and the crystal habit becomes prominent and isotropic. As described above, the composite metal hydroxide of the present invention includes one having a shape close to a regular octahedron. That is, the ratio of the major axis diameter of the basal plane to the thickness between the basal planes (major axis diameter / thickness) is preferably 1 to 9. 7 is more preferable as the upper limit value of the ratio of the major axis diameter to the thickness. In addition, in the above-mentioned Miller-Brave index, "1 bar"
Is displayed as "-1".

It can be seen from the following that the six surfaces surrounding the outer periphery of the complex metal hydroxide of the present invention are pyramidal surfaces belonging to {10 · 1}. That is, when the crystal of the composite metal hydroxide of the present invention is observed from the c-axis direction with a scanning electron microscope, the crystal exhibits three-fold rotational symmetry with the c-axis as the rotation axis. In addition, the (10 · 1) plane and the {1
The calculated value of the face-to-face angle with the mold surface of 0 · 1} substantially agrees with the measured value of the face-to-face angle in the scanning electron microscope observation.

Further, the composite metal hydroxide of the present invention is
Half-width B of peak of (110) plane in powder X-ray diffraction
₁₁₀And the half width B of the peak of the (001) plane₀₀₁Ratio with
(B_{11 0}/ B₀₀₁) Is 1.4 or more. This thing
In addition, the crystallinity in the c-axis direction is good and the thickness grows.
Can be confirmed. That is, conventional hydroxide mug
In crystals such as nesium, crystals grow in the c-axis direction.
The peak of the (001) plane is broad and the half width B₀₀₁
Also grows. Therefore (B₁₁₀/ B₀₀₁) Is
Get smaller. On the other hand, the composite metal hydroxide of the present invention
Then, since the crystallinity in the c-axis direction is good, the (001) plane
The peak is sharp and narrow, and the half width B₀₀₁Also becomes smaller.
Therefore (B₁₁₀/ B₀₀₁) Will increase in value
It

That is, the present inventors have conducted a series of studies to obtain a resin composition for semiconductor encapsulation which has excellent moisture resistance reliability and flame retardancy, excellent fluidity and good moldability. . As a result, for the purpose of suppressing the decrease in the above-mentioned fluidity, a polyhedral composite metal hydroxide having a large crystal growth in the thickness direction along with the vertical and horizontal directions is used, and when spherical silica powder is used as a filler, both are used in combination. The inventors have found that the decrease in fluidity of the resin composition due to the above is suppressed and excellent moldability is obtained, and the present invention has been achieved.

By using a complex metal hydroxide having a specific particle size distribution and a fine grain size as the complex metal hydroxide having the polyhedral shape, the specific particle size distribution can be further improved. It has been found that the use of the spherical silica powder has the excellent suppression of deterioration of fluidity, does not cause a problem at the time of transfer molding, etc. and further improves the moldability.

When the aspect ratio of the composite metal hydroxide is 1 to 8, the effect of lowering the viscosity of the resin composition is exerted, and the moldability is further improved.
And, within the range of the aspect ratio from 1 to 8,
It is preferably 1 to 7.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described in detail.

The resin composition for semiconductor encapsulation of the present invention comprises a thermosetting resin (component a), a curing agent (component b), a polyhedral complex metal hydroxide (component c), and spherical silica. It is obtained by using a powder (dual component), and is usually in the form of powder or a tablet obtained by tableting this. Alternatively, the resin composition is melt-kneaded and then molded into a granular shape such as a substantially columnar shape, or a sheet-like sealing material formed into a sheet shape.

Examples of the thermosetting resin (component (a)) include epoxy resin, polymaleimide resin, unsaturated polyester resin and phenol resin. Particularly, in the present invention, it is preferable to use an epoxy resin or a polymaleimide resin.

The above-mentioned epoxy resin is not particularly limited and conventionally known ones can be used. For example, bisphenol A type, phenol novolac type, cresol novolac type, biphenyl type and the like can be mentioned.

Of the above epoxy resins, the biphenyl type epoxy resin is represented by the following general formula (2).

[0026]

[Chemical 3]

Of —H (hydrogen) or an alkyl group having 1 to 5 carbon atoms represented by R _{1 to} R ₄ in the general formula (2), the alkyl group is a methyl group, an ethyl group, Propyl group, isopropyl group, butyl group, isobutyl group,
Examples thereof include linear or branched lower alkyl groups such as sec-butyl group and tert-butyl group, particularly preferably methyl group, and R _{1 to} R ₄ may be the same or different. Among them, from the viewpoint of low hygroscopicity and reactivity, it is particularly preferable to use a biphenyl type epoxy resin having a structure represented by the following formula (3) in which all of R _{1 to} R ₄ are methyl groups.

[0028]

[Chemical 4]

Further, as the polymaleimide resin,
A conventionally known one is used without particular limitation,
It has two or more maleimide groups in one molecule. For example, N, N'-4,4'-diphenylmethane bismaleimide, 2,2-bis- [4- (4-maleimidophenoxy) phenyl] propane and the like can be mentioned.

As the curing agent (b) used together with the thermosetting resin (b), conventionally known compounds such as phenol resin, acid anhydride and amine compound are used. When an epoxy resin is used as the thermosetting resin, a phenol resin is preferably used. Examples of the phenol resin include phenol novolac, cresol novolac, bisphenol A type novolac,
Examples include naphthol novolac and phenol aralkyl resin. When a biphenyl type epoxy resin is used as the epoxy resin, it is preferable to use a phenol aralkyl resin as the curing agent.

The curing agent used when the polymaleimide resin is used as the thermosetting resin is not particularly limited, and conventionally known ones can be used. Examples thereof include alkenylphenols and amines obtained by reacting the above epoxy resin curing agent with an allyl halide in the presence of an alkali.

When the thermosetting resin (a component) is an epoxy resin and the curing agent (b component) is a phenol resin, the content ratio of both is 1 equivalent of epoxy group in the epoxy resin. The hydroxyl group in the phenol resin is preferably set to 0.7 to 1.3 equivalents, and particularly preferably set to 0.9 to 1.1 equivalents.

The composite metal hydroxide (component (c)) used together with the thermosetting resin (component (a)) and the curing agent (component (b)) is represented by the following general formula (1) and has a polyhedral crystal shape. It has a shape.

[0034]

Embedded image m (M _a O _b ) · n (Q _d O _e ) · cH ₂ O (1) [In the above formula (1), M and Q are different metal elements, and Q is a period. Table IVa, Va, VIa, VII
It is a metal element belonging to a group selected from a, VIII, Ib, and IIb. In addition, m, n, a, b, c, d, and e are positive numbers, and may have the same value or different values. ]

Regarding the complex metal hydroxide represented by the general formula (1), M representing the metal element in the formula (1) is Al, Mg, Ca, Ni, Co, Sn, Zn, C.
Examples include u, Fe, Ti, B and the like.

Q representing another metal element in the complex metal hydroxide represented by the general formula (1) is IVa, Va, VIa, VIIa, VIII, Ib, IIb in the periodic table. It is a metal belonging to the group selected from. For example, iron, cobalt, nickel, palladium, copper, zinc and the like can be mentioned, and they are selected alone or in combination of two or more.

The composite metal hydroxide having such a polyhedral crystal shape can be prepared, for example, by controlling various conditions in the production process of the composite metal hydroxide.
To obtain a complex metal hydroxide having a desired polyhedron shape in which crystal growth is large in the thickness direction (c-axis direction) in the vertical and horizontal directions, for example, a substantially dodecahedron, a substantially octahedron, a substantially tetrahedron, etc. You can

The polyhedral composite metal hydroxide used in the present invention has, for example, a polyhedral structure having a crystal outline of an octahedron and an aspect ratio of about 1 to 8, preferably 1 to 7, and particularly preferably. Is adjusted to 1 to 4,
For example, when the case of M = Mg and Q = Zn in the formula (1) is described, it can be manufactured as follows. That is, first, a zinc nitrate compound is added to an aqueous magnesium hydroxide solution to prepare a partially composite metal hydroxide as a raw material. Then, this raw material, 800 ~ 1500
A composite metal oxide is produced by firing in the range of 1000C, more preferably in the range of 1000 to 1300C. This composite metal oxide is m (MgO) .n (Zn
O), but at least one selected from the group consisting of a carboxylic acid, a metal salt of a carboxylic acid, an inorganic acid and a metal salt of an inorganic acid is added in an amount of about 0.1 by hydration reaction in the strong stirring 40 ° C. above the temperature in the system of aqueous medium coexisting ~6mol%, m (MgO) · n (ZnO) · cH represented by ₂ O, polyhedral shape of the present invention It is possible to produce a composite metal hydroxide having

In the above-mentioned production method, not only the partially composite metal hydroxide obtained by the above-mentioned method as a raw material but also the
For example, a complex metal hydroxide obtained by a coprecipitation method,
A mixture of magnesium hydroxide and Zn, a mixture of magnesium oxide and Zn oxide, a mixture of magnesium carbonate and Zn carbonate, and the like can also be used. Further, stirring during the hydration reaction improves homogeneity and dispersibility, improves contact efficiency with at least one selected from the group consisting of carboxylic acids, metal salts of carboxylic acids, inorganic acids and metal salts of inorganic acids, etc. Therefore, strong stirring is preferable, and more powerful high shear stirring is more preferable. Such stirring is preferably carried out, for example, in a rotary blade type stirrer at a peripheral speed of the rotary blade of 5 m / s or more.

The carboxylic acid is not particularly limited, but monocarboxylic acid, oxycarboxylic acid (oxy acid) and the like are preferable. Examples of the monocarboxylic acid include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid, acrylic acid, crotonic acid, and the like, and examples of the oxycarboxylic acid (oxyacid) include glycolic acid, Lactic acid, hydroacrylic acid,
Examples include α-oxybutyric acid, glyceric acid, salicylic acid, benzoic acid and gallic acid. The metal salt of the carboxylic acid is not particularly limited, but magnesium acetate, zinc acetate and the like are preferable. The inorganic acid is not particularly limited, but nitric acid, hydrochloric acid and the like are preferable. The metal salt of the inorganic acid is not particularly limited, but magnesium nitrate, zinc nitrate and the like are preferable.

A typical representative example of the complexed metal hydroxide having the above polyhedral shape is sMgO. (1-s) N.
iO · cH ₂ O [0 <s <1, 0 <c ≦ 1], sMgO
・ (1-s) ZnO · cH ₂ O [0 <s <1, 0 <c ≦
1], sAl ₂ O ₃ · (1-s) Fe ₂ O ₃ · cH ₂ O
[0 <s <1, 0 <c ≦ 3] and the like. Among them, magnesium oxide / nickel oxide hydrate and magnesium oxide / zinc oxide hydrate are particularly preferably used.

The complex metal hydroxide having the polyhedral shape (component (c)) preferably has the following particle size distributions (A) to (C). A laser-type particle size analyzer is used for measuring the particle size distribution shown below. (A) 10 to 35% by weight of particles having a particle size of less than 1.3 μm. (B) Particles having a particle size of 1.3 to less than 2.0 μm are 50 to 65
weight%. (C) 10 to 30% by weight of particles having a particle size of 2.0 μm or more.

In the above particle size distribution, when the particle size distribution (A) having a particle size of less than 1.3 μm is less than 10% by weight,
If the effect of flame retardancy becomes poor and conversely the amount exceeds 35% by weight, fluidity tends to be impaired. In addition, the particle size distribution (C) of 2.0 μm or more is 1
If it is less than 0% by weight, the fluidity tends to decrease, and conversely if it exceeds 30% by weight, the flame retardant effect tends to be poor. The usual lower limit of the particle size in the particle size distribution (A) is 0.1 μm, and the usual lower limit of the particle size in the particle size distribution (C) is 15 μm.

In the polyhedral composite metal hydroxide which is the component (C), the particle size distribution (A) to
In addition to (C), the maximum particle size is preferably 10 μm or less. Particularly preferably, the maximum particle size is 6 μm or less. That is, when the maximum particle size exceeds 10 μm, there is a tendency that a large amount is required to have flame retardancy.

Further, the specific surface area of the polyhedral composite metal hydroxide which is the above-mentioned component (C) has a specific surface area of 2.0 to 4.0 m ^2.
It is preferably in the range of / g. The specific surface area of the component (c) is measured by the BET adsorption method.

The aspect ratio of the composite metal hydroxide (ha component) having the above polyhedral shape is usually 1 to 8,
It is preferably 1 to 7, and particularly preferably 1 to 4. The aspect ratio here is expressed by the ratio of the major axis and the minor axis of the composite metal hydroxide. That is, when the aspect ratio exceeds 8, the effect of decreasing the viscosity when the resin composition containing the complexed metal hydroxide is melted becomes poor. When used as a constituent component of the resin composition for semiconductor encapsulation of the present invention, those having an aspect ratio of 1 to 4 are generally used.

In the present invention, a conventional thin plate-shaped composite metal hydroxide can be used together with the polyhedral composite metal hydroxide which is the component (C). Then, from the viewpoint of decreasing the viscosity and exhibiting the effect of fluidity when the resin composition for semiconductor encapsulation of the present invention is melted, the total amount of the composite metal hydroxide used (including the conventional thin flat plate shape) is It is preferable to set the proportion of the polyhedral complex metal hydroxide in the range of 30 to 100% by weight. That is, when the proportion of the polyhedral complex metal hydroxide is less than 30% by weight, the effect of decreasing the viscosity of the resin composition and the effect of improving the fluidity become poor.

The content of the complex metal hydroxide containing the complex metal hydroxide (ha component) having the above polyhedron shape is 1 to 30% by weight, particularly 2 to 28% by weight of the whole resin composition.
It is preferable to set in the range of, and the excellent flame retarding effect can be exhibited within the range of this content. That is, when the content of the complexed metal hydroxide is less than 1% by weight, the flame retarding effect becomes insufficient, and when it exceeds 30% by weight, the chlorine ion concentration in the cured resin composition becomes high, so that the moisture resistance reliability is high. This is because there is a tendency of decreasing.

The spherical silica powder (component (d)) used together with the above-mentioned components (a) to (c) may be spherical fused silica powder or milled silica powder.
Above all, it is preferable to use the above spherical fused silica powder from the viewpoint that even better fluidity can be obtained.

The roundness of the spherical silica powder (dual component) is preferably 0.7 to 1.0. Particularly preferably, the roundness is 0.9 to
It is 1.0. The circularity of 0.7 to 1.0 means 0.7 to 1.0 in the definition of circularity described below.
It means that the one that is closer to a perfect circle, which is 1.0, is used. The roundness is calculated as follows. That is, in the projected image 1 of the object whose circularity is to be measured (see FIG. 6A), its real area is α,
When the perimeter of the projection image 1 is PM, a projection image 2 of a perfect circle having the same perimeter as the projection image 1 (see FIG. 6B) is assumed. Then, the area α ′ of the projected image 2 is calculated. As a result, the actual area α of the projected image 1 is
And the ratio (α / α ′) of the area α ′ of the projected image 2 indicates the roundness, and this value (α / α ′) is calculated by the following mathematical expression (1). Therefore, a circularity of 1.0 can be said to be a perfect circle, as is clear from this definition. And, the more the outer circumference of the object is, the more roundness is 1.
It gradually becomes smaller than zero.

[0051]

[Equation 1]

Next, the spherical silica powder (dual component) preferably has the particle size distributions (a) to (c) shown below. In addition, in the measurement of the particle size distribution shown below,
As with the complexed metal hydroxide, a laser particle sizer is used. (A) 10 to 25% by weight of particles having a particle size of less than 3 μm. (B) 5 to 35% by weight of particles having a particle size of 3 μm or more and less than 15 μm. (C) 40 to 50 μm or more and 200 μm or less
85% by weight.

That is, when the spherical silica powder (dual component) has the particle size distributions (a) to (c), the fluidity of the obtained epoxy resin composition is further improved. In addition, it is preferable to use those having an average particle diameter in the range of 12 to 55 μm.

In addition to the above spherical silica powder, various conventionally known fillers can be used as the inorganic filler. Examples thereof include quartz glass powder, talc, alumina powder, calcium carbonate, boron nitride, silicon nitride and carbon black powder. These may be used alone or in combination of two or more.

Regarding the content of the spherical silica powder (dual component), the spherical silica powder is added to the other inorganic filler and the complex metal hydroxide (compound metal hydroxide having a polyhedral shape and optionally used). It is preferable to set the total amount of all the inorganic substances including the conventional thin plate-shaped composite metal hydroxide) to be 60 to 92% by weight of the whole semiconductor encapsulating resin composition. Particularly preferably, it is 70 to 90% by weight. That is, the total amount of inorganic substances is 6
This is because if it is less than 0% by weight, the flame retardancy tends to decrease.

The semiconductor encapsulating resin composition according to the present invention requires a curing accelerator, a pigment, a release agent, a surface treatment agent, a flexibility-imparting agent, etc., in addition to the above-mentioned components (i)-(d). It can be added as appropriate.

The above-mentioned curing accelerator is a conventionally known one, for example, 1,8-diaza-bicyclo (5,4,0).
Examples include tertiary aminos such as undecene-7 and triethylenediamine, imidazoles such as 2-methylimidazole, and phosphorus-based curing accelerators such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate.

Examples of the pigment include carbon black and titanium oxide. Further, as the release agent,
Polyethylene wax, paraffin and fatty acid ester,
Examples include fatty acid salts.

Furthermore, examples of the surface treatment agent include coupling agents such as silane coupling agents. Examples of the flexibility-imparting agent include silicone resin and butadiene-acrylonitrile rubber.

In addition, in the resin composition for semiconductor encapsulation according to the present invention, when an organic flame retardant or a red phosphorus flame retardant is used in combination with the above components, the composite metal hydroxide having the above polyhedral shape is obtained. It is preferable because the amount of the complexed metal hydroxide containing (C) can be reduced. Examples of the organic flame retardant include nitrogen-containing organic compounds, phosphorus-containing organic compounds, phosphazene-based compounds, and the like, and nitrogen-containing organic compounds are particularly preferably used.

Examples of the nitrogen-containing organic compound include:
Examples thereof include compounds having a heterocyclic skeleton such as a melamine derivative, a cyanurate derivative, and an isocyanurate derivative.
These organic flame retardants may be used alone or in combination of two or more.

The above-mentioned organic flame retardant may be blended after being mechanically mixed with the above-mentioned composite metal hydroxide in advance, or the organic flame-retardant may be dissolved in a solvent and added thereto. You may use the thing which added the thing and desolvated and surface-treated.

The content of the organic flame retardant is determined by the amount of the composite metal hydroxide used (the polyhedral composite metal hydroxide and the conventional thin flat plate composite metal used as the case may be). It is preferable to set it in the range of 1 to 10% by weight of the total amount of hydroxide). It is particularly preferably 1 to 5% by weight.

On the other hand, examples of the above-mentioned red phosphorus flame retardant include red phosphorus powder, or red phosphorus powder whose surface is coated with various organic or inorganic substances. The content of the red phosphorus flame retardant is the same as in the case of the organic flame retardant, the amount of the complex metal hydroxide used (conventionally used in the case of polyhedral complex metal hydroxide). It is preferable to set it in the range of 1 to 10% by weight, and particularly preferably 1 to 5% by weight of the total amount of the thin plate-shaped composite metal hydroxide.

Then, in the resin composition for semiconductor encapsulation according to the present invention, suitable combinations of the respective components including the above-mentioned components (i)-(d) are as follows. That is, as the thermosetting resin (a component), an epoxy resin is preferable, and among them, a biphenyl epoxy resin is preferable from the viewpoint of good fluidity, and as the curing agent (b component), a viewpoint of its fluidity. Therefore, phenol aralkyl resin is preferable. Then, as the polyhedral composite metal hydroxide (C component), as a spherical silica powder (D component), together with the composite metal hydroxide having the specific particle size distributions (A) to (C), It is preferable to use spherical silica powder (dual component) having high roundness and having a specific particle size distribution (a) to (c). Further, when the above-mentioned complexed metal hydroxide is used in addition to each of these components, the releasability tends to decrease, so that waxes, particularly acid value 3 are used.
It is preferable to use a polyethylene wax or ester wax having a high acid value of 0 or more (usually the upper limit is 200).

The resin composition for semiconductor encapsulation according to the present invention is
For example, it can be manufactured as follows. That is, a thermosetting resin (a component), a curing agent (a component), a polyhedral complex metal hydroxide (a component), a spherical silica powder (a component), and other additives as required are prescribed. Blend in the ratio of. Next, this mixture is melt-kneaded in a heated state using a kneading machine such as a mixing roll machine, and this is cooled to room temperature. Then, the desired resin composition for encapsulating a semiconductor can be manufactured by a series of steps of pulverization by known means and tableting as necessary.

Alternatively, the mixture of the above-mentioned resin composition for semiconductor encapsulation is introduced into a kneading machine, kneaded in a molten state, and then continuously molded into a substantially columnar granular body by a series of steps. The semiconductor encapsulating resin composition can be produced.

Further, a method of receiving a mixture of the above-mentioned resin composition for semiconductor encapsulation on a pallet and cooling it, followed by press rolling, roll rolling, or coating with a mixture of solvents to form a sheet, etc. Thus, a sheet-shaped resin composition for encapsulating a semiconductor can be manufactured.

The method for sealing a semiconductor element using the thus obtained resin composition for semiconductor encapsulation (powder, tablet, granule, etc.) is not particularly limited.
It can be performed by a known molding method such as ordinary transfer molding.

Using the sheet-shaped resin composition for semiconductor encapsulation, for example, a semiconductor device by flip-chip mounting can be manufactured as follows. That is, the sheet-shaped semiconductor encapsulating resin composition is arranged on the electrode surface side of a semiconductor element having a bonding bump or on the bump bonding side of a circuit board, and the semiconductor element and the circuit board are bumped. The semiconductor device can be manufactured by flip-chip mounting by bonding and sealing the both by resin sealing.

Next, examples will be described together with comparative examples.

First, the following materials were prepared.

[Epoxy resin] Biphenyl epoxy resin represented by the above formula (3) [all R _{1 to} R ₄ in the formula (2) are methyl groups: epoxy equivalent 195]

[Phenol resin] Phenol aralkyl resin (hydroxyl equivalent 174)

[Silica powder-] Silica powder shown in Table 1 below.

[0076]

[Table 1]

[Phosphorus-Based Curing Accelerator] Triphenylphosphine

[Ester wax] Carnauba wax (acid value 2 to 10)

[Olefin wax] Polyethylene wax (acid value 160)

Next, prior to the examples, various composite metal hydroxides shown in Tables 2 and 3 below were prepared. The composite metal hydroxides in Tables 2 and 3 below are
It was produced according to the method for producing the polyhedral complexed metal hydroxide described above.

[0081]

[Table 2]

[0082]

[Table 3]

[0083]

[Examples 1 to 9 and Comparative Examples 1 and 2]
The components shown in Table 6 were blended in the proportions shown in the same table, melt-kneaded for 3 minutes with a mixing roll machine (temperature 100 ° C.),
After cooling and solidifying, the powder was pulverized to obtain the desired powdery epoxy resin composition.

[0084]

[Table 4]

[0085]

[Table 5]

[0086]

[Table 6]

Using the thus obtained epoxy resin compositions of Examples and Comparative Examples, test pieces having a thickness of 1/16 inch were molded, and the flame retardancy was evaluated according to the method of UL94 V-0 standard. The molding conditions of the above test piece are 175 ° C ×
The post-curing was set to 175 ° C. × 5 hours for 2 minutes. In addition, passing means 94-V0 passing. The results of these measurements and evaluations are shown in Tables 7 to 9 below.

Then, using each epoxy resin composition, the spiral flow value and the flow tester viscosity were measured according to the following methods.

[Spiral Flow Value] Using a mold for spiral flow measurement, EMMI 1-6 at 175 ± 5 ° C.
The spiral flow value was measured according to 6.

[Flow Tester Viscosity] 2 g of each of the above epoxy resin compositions was precisely weighed and molded into tablets. Then, put this in the pot of the Koka type flow tester, 1
The measurement was performed by applying a load of 0 kg. The melt viscosity of the sample was determined from the moving speed of the piston when the melted epoxy resin composition was extruded through a hole (diameter 1.0 mm × 10 mm) of a die.

Further, using the epoxy resin compositions obtained in the above Examples and Comparative Examples, semiconductor elements were transfer-molded (conditions: 175 ° C. × 2 minutes) and post-cured at 175 ° C. × 5 hours to give semiconductors. I got the device. This semiconductor device is an 80-pin QFP (quad flat package, size: 20 × 14 × 2 mm), and the die pad size is 8 × 8 mm.

[Evaluation of Gold Wire Deformation] Regarding the above semiconductor device, first, the occurrence of defects such as deformation of the gold wire was measured by observing a transmission image inside the package with a soft X-ray device. As a result of the measurement, the one in which the deformation of the gold wire was confirmed was x, and the one in which the deformation of the gold wire was not confirmed and a good package was evaluated as o, and shown in Tables 7 to 9 below.

[0093]

[Table 7]

[0094]

[Table 8]

[0095]

[Table 9]

From Tables 7 to 9 above, it is clear that all of the examples have a high flame retardancy level, a high spiral flow value, and a low flow tester viscosity, and therefore are excellent in fluidity. Is. Also, good results were obtained regarding the moisture resistance reliability and solder resistance of the obtained semiconductor device. And the deformation of the gold wire was not seen at all.

On the other hand, in the comparative example, it is understood that the gold wire is remarkably deformed and the fluidity is lowered.

Further, as the epoxy resin component in the above Example 1, a biphenyl type epoxy resin in which R _{1 to} R ₄ in the formula (2) are all hydrogen and an R in the formula (2) are used.
_The biphenyl type epoxy resin in which _{1 to} R ₄ are all methyl groups was replaced with a mixed epoxy resin in which the weight ratio was 1: 1. Except for this, the epoxy resin composition was prepared by setting the same compounding ratio as in Example 1. Using this epoxy resin composition, the same measurement and evaluation as above were carried out, and as a result, good results substantially the same as those in the above-mentioned examples were obtained.

[0099]

INDUSTRIAL APPLICABILITY As described above, the present invention provides a semiconductor encapsulation containing spherical silica powder (dual component) in addition to the polyhedral composite metal hydroxide (c component) represented by the general formula (1). It is a stopping resin composition. As described above, the use of the above-mentioned special composite metal hydroxide gives excellent flame retardancy and there is no influence of bromine as compared with the use of brominated epoxy resin or antimony compound which is a conventional flame retardant. The corrosion resistance of the semiconductor element and the aluminum wiring does not occur, the moisture resistance reliability is improved, the life is extended, and problems such as environmental pollution do not occur. Further, since it has the above-mentioned special polyhedron crystal shape instead of the conventional flat crystal shape, it is excellent in fluidity and the moldability is improved. Moreover, since the spherical silica powder (dual component) is used, the effect of further improving the fluidity can be obtained. In addition to the flame retardancy, moldability, and effect of preventing environmental pollution, when the polyhedral complex metal hydroxide (component (c)) is used, the polyhedral complex metal hydroxide becomes a semiconductor. Since it is uniformly dispersed in the encapsulating resin composition, flame retardance equal to or higher than that of conventionally known flame retardants such as metal hydroxides can be obtained, and therefore the amount used can be small. As a result, the amount of water absorption is reduced, and the solder characteristics are improved. Further, in the present invention, since the polyhedral complex metal hydroxide is used, compared to the case of using a conventional thin plate-shaped or scale-shaped complex metal hydroxide, it is possible to reduce the amount used, therefore, When the spherical silica powder is used in combination in the present invention,
Since the spherical silica powder amount can be set relatively large, in such a case, the linear expansion coefficient of the obtained semiconductor device can be lowered and the mechanical strength can be improved.

When the special complex metal hydroxide having the above-mentioned crystal shape has the above-mentioned specific particle size distribution, and further when the spherical silica powder has the above-mentioned specific particle size distribution, excellent flame retardancy is obtained. In addition to the effect, very excellent reduction of fluidity is suppressed, problems do not occur at the time of transfer molding, and further excellent moldability is realized.

Further, when the aspect ratio of the composite metal hydroxide is 1 to 8, the effect of lowering the viscosity of the resin composition is exerted and the moldability is further improved.

Therefore, the semiconductor device encapsulated with the resin composition for semiconductor encapsulation of the present invention has a flame-retardant technique excellent in safety and the reliability of the semiconductor device is remarkably improved. In addition, the method of manufacturing a semiconductor device by transfer molding using the resin composition for semiconductor encapsulation, or the method of manufacturing a semiconductor device using the resin composition for semiconductor encapsulation is excellent in moldability. Therefore, among semiconductor devices, it is particularly effective for thin and large-sized semiconductor devices and has an extremely high industrial utility value.

[Brief description of drawings]

FIG. 1 is a scanning electron micrograph (magnification: 50,000 times) showing an example of a crystal shape of a polyhedral composite metal hydroxide used in the present invention.

FIG. 2 is a perspective view showing a hexagonal plate shape which is one of crystal shapes of a conventional composite metal hydroxide.

3A and 3B are explanatory views showing the outer shape of a conventional complexed metal hydroxide, wherein FIG. 3A is a plan view and FIG. 3B is a side view.

FIG. 4 is an explanatory view showing an example of the outer shape of the composite metal hydroxide of the present invention, (a) is a plan view and (b) is a side view.

FIG. 5 is an explanatory view showing another example of the outer shape of the complex metal hydroxide of the present invention, (a) is a plan view and (b) is a side view.

6 (a) and 6 (b) are explanatory views showing a method for measuring the roundness of spherical silica powder.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ identification code FI H01L 23/31 (58) Fields investigated (Int.Cl. ⁷ , DB name) C08L 1/00-101/16

Claims (22)

(57) [Claims] 1. A resin composition for semiconductor encapsulation, which comprises the following components (a) to (d). (A) Thermosetting resin. (B) Curing agent. (C) A polyhedral complex metal hydroxide represented by the following general formula (1). Embedded image m (M _a O _b ) · n (Q _d O _e ) · cH ₂ O (1) [In the above formula (1), M and Q are metal elements different from each other, and Q is a period. Table IVa, Va, VIa, VII
It is a metal element belonging to a group selected from a, VIII, Ib, and IIb. In addition, m, n, a, b, c, d, and e are positive numbers, and may have the same value or different values. ] (D) Spherical silica powder. 2. The resin composition for semiconductor encapsulation according to claim 1, wherein the spherical silica powder as the component (d) has a roundness of 0.7 to 1.0. 3. The resin composition for semiconductor encapsulation according to claim 1, wherein the component (c) has a particle size distribution (A) to (C) shown below. (A) 10 to 35% by weight of particles having a particle size of less than 1.3 μm. (B) Particles having a particle size of 1.3 to less than 2.0 μm are 50 to 65
weight%. (C) 10 to 30% by weight of particles having a particle size of 2.0 μm or more. 4. The semiconductor encapsulation according to claim 1, wherein the spherical silica powder as the component (d) has a particle size distribution (a) to (c) shown below. Resin composition. (A) 10 to 25% by weight of particles having a particle size of less than 3 μm. (B) 5 to 35% by weight of particles having a particle size of 3 μm or more and less than 15 μm. (C) 40 to 50 μm or more and 200 μm or less
85% by weight. 5. M representing the metal element in the complex metal hydroxide represented by the general formula (1) is aluminum, magnesium, calcium, nickel, cobalt, tin, zinc, copper, iron, titanium and The resin composition for semiconductor encapsulation according to claim 1, wherein the resin composition is at least one metal selected from the group consisting of boron. 6. The Q representing the metal element in the complex metal hydroxide represented by the general formula (1) is at least one selected from the group consisting of iron, cobalt, nickel, palladium, copper and zinc. The resin composition for semiconductor encapsulation according to claim 1, wherein the resin composition is one metal. 7. The composite metal hydroxide represented by the general formula (1) has an average particle size of 0.5 to 10 μm.
The resin composition for semiconductor encapsulation according to the description. 8. The resin composition for semiconductor encapsulation according to claim 1, wherein the composite metal hydroxide represented by the general formula (1) has an aspect ratio of 1 to 8. . 9. The proportion of the complex metal hydroxide having the polyhedral shape represented by the general formula (1) in the whole complex metal hydroxide is in the range of 30 to 100% by weight. The resin composition for semiconductor encapsulation according to any one of 1 to 8. 10. The composite metal hydroxide represented by the general formula (1) is sMgO. (1-s) NiO.cH ₂ O.
The resin composition for semiconductor encapsulation according to claim 1, wherein [0 <s <1, 0 <c ≦ 1]. 11. The complex metal hydroxide represented by the general formula (1) is sMgO. (1-s) ZnO.cH ₂ O.
The resin composition for semiconductor encapsulation according to claim 1, wherein [0 <s <1, 0 <c ≦ 1]. 12. The content of the complexed metal hydroxide represented by the general formula (1) is set in the range of 1 to 30% by weight based on the entire resin composition. The resin composition for semiconductor encapsulation according to 1 above. 13. The pH of the extract of the cured resin composition for semiconductor encapsulation is in the range of 6.0 to 8.0, and the chloride ion concentration is 200 per 1 g of the cured resin composition.
The resin composition for semiconductor encapsulation according to any one of claims 1 to 12, which has an amount of not more than μg. 14. A cured product of a resin composition for semiconductor encapsulation,
In the UL94 combustion test with a thickness of 1/16 inch, V
The resin composition for semiconductor encapsulation according to claim 1, which exhibits a flame retardancy equivalent to −0. 15. The resin composition for semiconductor encapsulation according to claim 1, wherein the thermosetting resin as the component (a) is an epoxy resin. 16. The resin composition for semiconductor encapsulation according to claim 1, wherein the curing agent which is the component (b) is a phenol resin. 17. A total amount of a composite metal hydroxide containing a polyhedral composite metal hydroxide as the component (C) and an inorganic filler containing a spherical silica powder as the component (D). However, 60 to 92 of the entire resin composition for semiconductor encapsulation
The resin composition for semiconductor encapsulation according to any one of claims 1 to 16, wherein the resin composition is wt%. 18. The total amount of a composite metal hydroxide containing a polyhedral composite metal hydroxide as the component (c) and an inorganic filler containing a spherical silica powder as the component (d). Is 70 to 90 of the entire resin composition for semiconductor encapsulation.
The resin composition for semiconductor encapsulation according to any one of claims 1 to 16, wherein the resin composition is wt%. 19. The resin composition for semiconductor encapsulation according to any one of claims 1 to 18, which comprises a nitrogen-containing organic compound. The resin composition for semiconductor encapsulation of. 20. A semiconductor device obtained by encapsulating a semiconductor element using the resin composition for encapsulating a semiconductor according to claim 1. 21. A semiconductor device is manufactured by resin-sealing a semiconductor element by a transfer molding method using the resin composition for semiconductor encapsulation according to any one of claims 1 to 19. How to make the device. 22. A method of manufacturing a semiconductor device, which comprises manufacturing a semiconductor device using a sheet-shaped encapsulating material comprising the resin composition for encapsulating a semiconductor according to any one of claims 1 to 19.