JP3532471B2 - Semiconductor sealing resin composition and semiconductor device using the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for semiconductor encapsulation excellent in solder resistance and flame retardancy, and a semiconductor device using the same.

[0002]

2. Description of the Related Art Semiconductor elements such as transistors, ICs, and LSIs have conventionally been encapsulated with an epoxy resin composition and made into electronic parts. It is indispensable for this electronic component to comply with UL94 V-0, which is a standard for flame retardancy. Until now, in order to impart its flame retardant action, antimony compounds such as brominated epoxy resin and antimony oxide have been used. Has been adopted.

However, recently, from the viewpoint of environmental protection, there has been a demand for a flame-retardant epoxy resin composition to which flame retardancy is imparted without using a halogen-based flame retardant or antimony oxide.

[0004]

On the other hand, as the degree of integration has increased due to technological innovation in the semiconductor field, the package to be mounted has become larger and thinner. This allows
Since the thermal stress at the time of mounting on a substrate increases and cracks and peeling occur at that time, high demands for reliability called solder resistance have come to be made. Against such a background, for example, an epoxy resin composition using a biphenyl type epoxy resin represented by the following general formula (3) is used as a sealing material. It has the drawbacks that voids are generated in the package and the continuous moldability is poor.

[0005]

[Chemical 3]

The present invention has been made in view of the above circumstances, and has a resin composition for semiconductor encapsulation excellent in solderability and flame retardancy as well as good fluidity and reliability obtained using the same. An object is to provide a high semiconductor device.

[0007]

In order to achieve the above object, the first aspect of the present invention is a semiconductor encapsulating resin composition containing the following components (A) to (C).

(A) Biphenols (a1) represented by the following general formula (1) and polyhydric phenols (a2) other than the above biphenols (a1) are mixed by weight (a1 /).
An epoxy compound obtained by subjecting a mixed polyphenol obtained by mixing a1 / a2 = 20/80 to 95/5 in a2) to an epihalohydrin and subjecting it to a ring closure reaction.

[Chemical 4] (B) Phenolic resin. (C) A polyhedral complex metal hydroxide represented by the following general formula (2).

Embedded image m (M _a O _b ) · n (Q _d O _e ) · cH ₂ O (2) [In the above formula (2), M and Q are different metal elements, and Q is a period. Table IVa, Va, VIa, VII
It is a metal element belonging to a group selected from a, VIII, Ib, and IIb. In addition, m, n, a, b, c, d, and e are positive numbers, and may have the same value or different values. ]

A second aspect of the present invention is a semiconductor device obtained by encapsulating a semiconductor element using the semiconductor encapsulating resin composition.

The component (C) in the resin composition for semiconductor encapsulation of the present invention means a polyhedral complex metal hydroxide having a hexagonal plate shape as shown in FIG. It does not have a so-called thin plate-like crystal shape such as a scaly shape, but has large crystal growth in the thickness direction (c-axis direction) in both the vertical and horizontal directions. For example, a plate crystal has a thickness direction. A complex metal hydroxide having a granular crystal shape that has grown in the (c-axis direction) and is approximated to a more three-dimensional and spherical shape, for example, a dodecahedron, an octahedron, or a tetrahedron. , Usually a mixture of these. Of course, the above-mentioned polyhedron shape can be approximated to a more three-dimensional and spherical shape by changing the shape of the polyhedron by crushing or grinding in addition to the method of growing crystals. FIG. 1 shows an example of a scanning electron micrograph (magnification: 50,000 times) showing the crystal shape of the polyhedral composite metal hydroxide. As described above, in the present invention, by using the polyhedral composite metal hydroxide, a hexagonal plate having a conventional shape or a plate-like crystal shape such as a scale-like shape is used. It is possible to suppress a decrease in the fluidity of the resin composition as compared with the resin.

The shape of the composite metal hydroxide of the present invention will be described in more detail by taking a substantially octahedral shape as an example. That is, an octahedral shape which is an example of the composite metal hydroxide of the present invention is composed of two parallel base surfaces on the upper and lower sides and six pyramidal surfaces on the outer periphery, and the pyramidal surfaces face upward and inclined. It has an octahedral shape in which inclined surfaces are alternately arranged.

More specifically, a conventional thin crystal having a flat plate shape has, for example, a hexagonal crystal structure as a crystal structure, as shown in FIG.
Upper and lower 2 represented by the (00.1) plane in the Bravais index
It is a hexagonal columnar shape whose outer periphery is surrounded by a base surface 10 of the surface and six square cylindrical surfaces 11 belonging to the {10.0} mold surface. And
Since there is little crystal growth in the [001] direction (c-axis direction), it has a thin hexagonal columnar shape.

On the other hand, the composite metal hydroxide of the present invention, as shown in FIG. 4, is obtained by controlling the crystal habit during crystal growth.
Two upper and lower base surfaces 12 represented by the (00 · 1) plane,
The outer periphery is surrounded by six pyramidal surfaces 13 belonging to the {10 · 1} mold surface. The pyramid surface 13 is (10.
It has an octahedral shape having a special crystal habit in which upwardly inclined surfaces 13a such as 1) surfaces and downwardly inclined surfaces 13b such as (10-1) surfaces are alternately arranged. Also, the crystal growth in the c-axis direction is larger than that of the conventional one. Although the shape shown in FIG. 4 is close to a plate shape, FIG. 5 shows that the crystal growth in the c-axis direction further progresses, and the crystal habit becomes prominent and isotropic. As described above, the composite metal hydroxide of the present invention includes one having a shape close to a regular octahedron. That is, the ratio of the major axis diameter of the basal plane to the thickness between the basal planes (major axis diameter / thickness) is preferably 1 to 9. 7 is more preferable as the upper limit value of the ratio of the major axis diameter to the thickness. In addition, in the above-mentioned Miller-Brave index, "1 bar"
Is displayed as "-1".

As described above, it is understood from the following that the six surfaces surrounding the outer periphery of the complex metal hydroxide of the present invention are pyramidal surfaces belonging to {10 · 1}. That is, when the crystal of the composite metal hydroxide of the present invention is observed from the c-axis direction with a scanning electron microscope, the crystal exhibits three-fold rotational symmetry with the c-axis as the rotation axis. In addition, the (10 · 1) plane and the {1
The calculated value of the face-to-face angle with the mold surface of 0 · 1} substantially agrees with the measured value of the face-to-face angle in the scanning electron microscope observation.

Further, the composite metal hydroxide of the present invention is
Half-width B of peak of (110) plane in powder X-ray diffraction
₁₁₀And the half width B of the peak of the (001) plane₀₀₁Ratio with
(B_{11 0}/ B₀₀₁) Is 1.4 or more. This thing
In addition, the crystallinity in the c-axis direction is good and the thickness grows.
Can be confirmed. That is, conventional hydroxide mug
In crystals such as nesium, crystals grow in the c-axis direction.
The peak of the (001) plane is broad and the half width B₀₀₁
Also grows. Therefore (B₁₁₀/ B₀₀₁) Is
Get smaller. On the other hand, the composite metal hydroxide of the present invention
Then, since the crystallinity in the c-axis direction is good, the (001) plane
The peak is sharp and narrow, and the half width B₀₀₁Also becomes smaller.
Therefore (B₁₁₀/ B₀₀₁) Will increase in value
It

That is, the present inventors have conducted a series of studies in order to obtain a sealing material having excellent flame retardancy as well as fluidity and solder resistance. As a result, by using the special epoxy resin [(A) component] and the complexed metal hydroxide having the polyhedral shape [(C) component] together, excellent fluidity and flame retardancy are imparted, Moreover, they have found that a sealing material excellent in reliability such as solder resistance can be obtained, and have reached the present invention.

The composite metal hydroxide [(C)
As the component], when the one having the particle size distributions (c1) to (c3) is used, the fluidity and the flame retardancy are further improved.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described in detail.

The resin composition for semiconductor encapsulation of the present invention uses a special epoxy resin (A component), a phenol resin (B component), and a specific polyhedral composite metal hydroxide (C component). It is obtained in the form of a powder or a tablet obtained by compressing the powder. Or
After the resin composition is melt-kneaded, it is a sheet-shaped encapsulating material which is formed into granules having a substantially cylindrical shape or the like and further formed into a sheet.

The specific epoxy compound (component A) used in the present invention is a biphenol (a1) represented by the following general formula (1) and a polyphenol (a2) other than the biphenol (a1). ) And a mixed polyhydric phenol obtained by mixing them with a specific weight mixing ratio are subjected to an addition reaction with epihalohydrin and a ring-closing reaction.

[0021]

[Chemical 6]

Specific examples of the biphenols (a1) represented by the above formula (1) include 4,4'-dihydroxybiphenyl, 3,3 ', 5,5'-tetramethyl-4,4.
4'-dihydroxybiphenyl, 3,3 ', 5,5'-
Tetraethyl-4,4'-dihydroxybiphenyl,
3,3 ', 5,5'-tetrapropyl-4,4'-dihydroxybiphenyl and the like can be mentioned.

Examples of the polyphenols (a2) other than the biphenols represented by the above formula (1) include phenol novolac, cresol novolac, resorcinol novolac, bisphenol A type novolac, p-hydroxybenzaldehyde and salicylaldehyde. And polyphenols derived from Among them, cresol novolak is preferably used from the viewpoint of workability.

The mixing ratio of the biphenols (a1) represented by the above formula (1) and the polyphenols (a2) other than the biphenols (a1) is a weight mixing ratio (a1 / a2). It is preferable to set a1 / a2 = 20/80 to 95/5, and particularly preferably a1 /
a2 = 30/70 to 80/20. That is, when the ratio of the polyhydric phenols (a2) other than the biphenols is large in the mixing ratio of the both, a high glass transition temperature can be obtained in the obtained epoxy resin composition for semiconductor encapsulation, but a low internal temperature No stress can be obtained. Also, if the proportion of the polyhydric phenols (a2) is too small, a high glass transition temperature cannot be obtained.

Then, the mixed polyhydric phenol obtained by mixing the biphenols (a1) represented by the above formula (1) and the polyhydric phenols (a2) other than the above biphenols at the above specific weight mixing ratio. In addition, a specific epoxy compound can be obtained by subjecting the compound to an epihalohydrin addition reaction and a ring-closing reaction. At that time, as the above-mentioned epihalohydrin, epichlorohydrin, epibromhydrin, etc. are generally used.

The addition reaction and ring-closing reaction of the above-mentioned mixed polyhydric phenol and epihalohydrin are carried out in the following manner according to a conventional method. That is, in a reaction vessel equipped with a stirrer, a thermometer and a condenser, a predetermined amount of biphenols, polyhydric phenols, epihalohydrin and isopropyl alcohol were added and dissolved, and then the solution was heated to 35 ° C., A predetermined amount of sodium hydroxide aqueous solution is added dropwise over 1 hour. In the meantime, the temperature is gradually raised to 65 ° C. at the end of dropwise addition of the aqueous sodium hydroxide solution, and then the reaction is completed by holding at 65 ° C. for 30 minutes, followed by washing with water to remove by-product salts and excess hydroxylation. After removal of sodium, excess epihalohydrin and isopropyl alcohol are removed by evaporation under reduced pressure to give a crude epoxy compound. Next, this crude epoxy compound is dissolved in toluene, an aqueous solution of sodium hydroxide is added, and the mixture is held at 65 ° C. for 1 hour to carry out a ring closure reaction. After the completion of the ring-closing reaction, sodium phosphate monobasic was added to neutralize the excess sodium hydroxide, and the by-product salt was removed by washing with water, and then the solvent was completely removed under reduced pressure to obtain the desired epoxy. The compound is obtained.

The epoxy compound thus obtained has an epoxy equivalent of 170 to 210 and a softening point of 50 to 110.
It is preferably in the range of 0 ° C., particularly preferably the epoxy equivalent of 180 to 200 and the softening point of 60 to 100 ° C.

In the present invention, as the epoxy resin component, other epoxy resin may be used in combination with the above specific epoxy compound (component A). The other epoxy resin is not particularly limited and includes conventionally known epoxy resins, for example, various epoxy resins such as cresol novolac type, phenol novolac type, bisphenol A type and naphthalene type. Further, a biphenyl type epoxy resin represented by the following general formula (3) can be given. In the above formula (3), R ₁ to
A biphenyl type epoxy resin represented by the following formula (4) in which all R ₄ are methyl groups is used. These may be used alone or in combination of two or more. Then, the combination ratio when the other epoxy resin is used in combination may be set to such an extent that the effect of the present invention is not impaired,
For example, another epoxy resin may
It is preferably set to 0% by weight or less.

[0029]

[Chemical 7]

[0030]

[Chemical 8]

The phenol resin (component B) used together with the epoxy resin (component A) acts as a curing agent for the epoxy resin and is not particularly limited, and a conventionally known one is used. Examples thereof include phenol novolac, cresol novolac, bisphenol A type novolac, naphthol novolac, and phenol aralkyl resin. Especially, when using a biphenyl type epoxy resin as said epoxy resin (A component), it is preferable to use the phenol aralkyl resin represented by the following general formula (5) as a phenol resin.

[0032]

[Chemical 9]

The mixing ratio of the epoxy resin (component A) and the phenol resin (component B) is such that the hydroxyl group in the phenol resin is 0.7 to 1.3 equivalents per equivalent of the epoxy group in the epoxy resin. It is preferable to set it so that it becomes 0.9 to 1.1 equivalents.

Then, a specific polyhedral composite metal hydroxide (component C) used together with the above components A to B is used.
Is represented by the following general formula (2), and the crystal shape is a polyhedral shape.

[0035]

Embedded image m (M _a O _b ) · n (Q _d O _e ) · cH ₂ O (2) [In the above formula (2), M and Q are different metal elements, and Q is a period. Table IVa, Va, VIa, VII
It is a metal element belonging to a group selected from a, VIII, Ib, and IIb. In addition, m, n, a, b, c, d, and e are positive numbers, and may have the same value or different values. ]

Regarding the complex metal hydroxide represented by the general formula (2), M representing the metal element in the formula (2) is Al, Mg, Ca, Ni, Co, Sn, Zn, C.
u, Fe, T i, etc. may be mentioned.

Q, which represents another metal element in the complex metal hydroxide represented by the general formula (2), is IVa, Va, VIa, VIIa, VIII, Ib, IIb in the periodic table. It is a metal belonging to the group selected from. For example, Fe, C
O, Ni, Pd, Cu, Zn and the like are listed, and they are selected alone or in combination of two or more.

The composite metal hydroxide having such a polyhedral crystal shape can be prepared, for example, by controlling various conditions in the production process of the composite metal hydroxide.
To obtain a complex metal hydroxide having a desired polyhedron shape in which crystal growth is large in the thickness direction (c-axis direction) in the vertical and horizontal directions, for example, a substantially dodecahedron, a substantially octahedron, a substantially tetrahedron, etc. You can

The polyhedral composite metal hydroxide used in the present invention shows, as an example, a polyhedral structure having a substantially octahedral crystal outer shape, and an aspect ratio of about 1 to 8, preferably 1 to 7, and particularly preferably. Is adjusted to 1 to 4,
For example, when the case of M = Mg and Q = Zn in the formula (2) is described, it can be manufactured as follows. That is, first, a zinc nitrate compound is added to an aqueous magnesium hydroxide solution to prepare a partially composite metal hydroxide as a raw material. Then, this raw material, 800 ~ 1500
A composite metal oxide is produced by firing in the range of 1000C, more preferably in the range of 1000 to 1300C. This composite metal oxide is m (MgO) .n (Zn
O), but at least one selected from the group consisting of a carboxylic acid, a metal salt of a carboxylic acid, an inorganic acid and a metal salt of an inorganic acid is added in an amount of about 0.1 by hydration reaction in the strong stirring 40 ° C. above the temperature in the system of aqueous medium coexisting ~6mol%, m (MgO) · n (ZnO) · cH represented by ₂ O, polyhedral shape of the present invention It is possible to produce a composite metal hydroxide having

In the above-mentioned production method, not only the partially composite metal hydroxide obtained by the above-mentioned method as a raw material but also the
For example, a complex metal hydroxide obtained by a coprecipitation method,
A mixture of magnesium hydroxide and Zn, a mixture of magnesium oxide and Zn oxide, a mixture of magnesium carbonate and Zn carbonate, and the like can also be used. Further, stirring during the hydration reaction improves homogeneity and dispersibility, improves contact efficiency with at least one selected from the group consisting of carboxylic acids, metal salts of carboxylic acids, inorganic acids and metal salts of inorganic acids, etc. Therefore, strong stirring is preferable, and more powerful high shear stirring is more preferable. Such stirring is preferably carried out, for example, in a rotary blade type stirrer at a peripheral speed of the rotary blade of 5 m / s or more.

The carboxylic acid is not particularly limited, but preferable examples include monocarboxylic acid and oxycarboxylic acid (oxy acid). Examples of the monocarboxylic acid include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid, acrylic acid, crotonic acid, and the like, and examples of the oxycarboxylic acid (oxyacid) include glycolic acid, Lactic acid, hydroacrylic acid,
Examples include α-oxybutyric acid, glyceric acid, salicylic acid, benzoic acid and gallic acid. The metal salt of the carboxylic acid is not particularly limited, but magnesium acetate, zinc acetate and the like are preferable. The inorganic acid is not particularly limited, but nitric acid, hydrochloric acid and the like are preferable. The metal salt of the inorganic acid is not particularly limited, but magnesium nitrate, zinc nitrate and the like are preferable.

As a concrete representative example of the complexed metal hydroxide having the above polyhedral shape, sMgO. (1-s) N
iO · cH ₂ O [0 <s <1, 0 <c ≦ 1], sMgO
・ (1-s) ZnO · cH ₂ O [0 <s <1, 0 <c ≦
1], sAl ₂ O ₃ · (1-s) Fe ₂ O ₃ · cH ₂ O
[0 <s <1, 0 <c ≦ 3] and the like. Among them, magnesium oxide / nickel oxide hydrate, magnesium oxide / zinc oxide hydrate, and magnesium oxide / copper oxide hydrate are particularly preferably used.

The complex metal hydroxide having the polyhedral shape (component C) preferably has the particle size distributions (c1) to (c3) shown below. A laser-type particle size analyzer is used for measuring the particle size distribution shown below. (C1) 10 to 35% by weight of particles having a particle size of less than 1.3 μm. (C2) 50 to 6 having a particle size of 1.3 to less than 2.0 μm
5% by weight. (C3) 10 to 30% by weight of particles having a particle size of 2.0 μm or more.

In the above particle size distribution, the particle size distribution (c1)
If the particle size is less than 1.3 μm less than 10% by weight, the flame retardant effect becomes poor, and conversely, if it exceeds 35% by weight, the fluidity tends to be impaired. If the particle size distribution (c3) of 2.0 μm or more is less than 10% by weight, the fluidity tends to decrease, and conversely, if it exceeds 30% by weight, the flame retardant effect tends to be poor. The usual lower limit of the particle size in the particle size distribution (c1) is 0.1 μm, and the particle size distribution (c
The usual upper limit for the particle size in 3) is 15 μm.

Further, the specific surface area of the polyhedral composite metal hydroxide which is the component (C) has a specific surface area of 2.0 to 4.0 m ^2.
It is preferably in the range of / g. The specific surface area of the component (C) is measured by the BET adsorption method.

The aspect ratio of the complex metal hydroxide (C component) having the above-mentioned polyhedral shape is usually 1 to 8, preferably 1 to 7, and particularly preferably 1 to 4. The aspect ratio here is expressed by the ratio of the major axis and the minor axis of the composite metal hydroxide. That is, when the aspect ratio exceeds 8, the effect of decreasing the viscosity when the resin composition containing the complexed metal hydroxide is melted becomes poor. When used as a constituent component of the resin composition for semiconductor encapsulation of the present invention, those having an aspect ratio of 1 to 4 are generally used.

In the present invention, a conventional thin plate-shaped composite metal hydroxide can be used together with the polyhedral composite metal hydroxide which is the component (C). Then, from the viewpoint of decreasing the viscosity and exhibiting the effect of fluidity when the resin composition for semiconductor encapsulation of the present invention is melted, the total amount of the composite metal hydroxide used (including the conventional thin flat plate shape) is It is preferable to set the proportion of the polyhedral complex metal hydroxide in the range of 30 to 100% by weight. That is, when the proportion of the polyhedral complex metal hydroxide is less than 30% by weight, the effect of decreasing the viscosity of the resin composition and the effect of improving the fluidity become poor.

The content of the complex metal hydroxide containing the complex metal hydroxide (component C) having the above polyhedron shape is 1 to 30% by weight, particularly 3 to 25% by weight of the whole resin composition.
It is preferable to set in the range of. That is, if the complexed metal hydroxide is less than 1% by weight, it is difficult to obtain a sufficient flame retardant effect, and if it exceeds 30% by weight,
This is because the fluidity tends to decrease and defects such as wire flow tend to occur.

Inorganic fillers are usually used together with the above components A to C. The inorganic filler is not particularly limited to crushed particles, ground particles, spherical particles, and various conventionally known fillers can be used. For example, quartz glass powder,
Examples thereof include talc, silica powder such as fused silica powder and crystalline silica powder, alumina, silicon nitride, aluminum nitride, and silicon carbide. From the viewpoint of fluidity, it is preferable to use fused silica powder, particularly spherical fused silica powder. These may be used alone or in combination of two or more. And, as the inorganic filler,
Average particle size measured by laser particle sizer is 10 ~ 70μm
The range is preferably, and more preferably 10 to 5.
It is 0 μm. That is, as described above, when the composite metal hydroxide has the particle size distributions (c1) to (c3) and the average particle size of the inorganic filler is within the above range, the resin composition is excellent. It has excellent fluidity.

The content of the above-mentioned inorganic filler is preferably set to be 60 to 95% by weight of the whole semiconductor encapsulating resin composition.

In addition to the components A to C and the inorganic filler, the resin composition for semiconductor encapsulation according to the present invention contains a curing accelerator, a pigment, a release agent, a flexibility-imparting agent, and a silane coupling agent. If necessary, a coupling agent such as an agent, an ion trap agent, an adhesion-imparting agent, and the like can be appropriately added.

The curing accelerator is not particularly limited as long as it accelerates the reaction between the epoxy group and the hydroxyl group, and for example, 1,8-diazabicyclo (5,5).
4,0) diazabicycloalkene compounds such as undecene-7, tertiary amines such as triethylenediamine, 2-
Examples thereof include imidazoles such as methylimidazole and phosphorus compounds such as triphenylphosphine. These compounds may be used alone or in combination of two or more.

Examples of the pigment include carbon black and titanium oxide. Further, as the release agent,
Examples thereof include carnauba wax, polyethylene wax, paraffin, fatty acid ester, and fatty acid salt.

Further, examples of the flexibility-imparting agent include various silicone compounds and acrylonitrile-butadiene rubber.

Examples of the ion trap agent include bismuth hydroxide and hydrotalcite compounds.

In addition, in the resin composition for semiconductor encapsulation according to the present invention, when an organic flame retardant or a red phosphorus flame retardant is used in combination with the above components, the composite metal hydroxide having the above polyhedral shape is obtained. The amount of the complexed metal hydroxide containing the (C component) can be reduced, which is preferable. Examples of the organic flame retardant include nitrogen-containing organic compounds, phosphorus-containing organic compounds, phosphazene-based compounds, and the like, and nitrogen-containing organic compounds are particularly preferably used.

Examples of the nitrogen-containing organic compound include:
Examples thereof include compounds having a heterocyclic skeleton such as a melamine derivative, a cyanurate derivative, and an isocyanurate derivative.
These organic flame retardants may be used alone or in combination of two or more.

The above-mentioned organic flame retardant may be blended after being mechanically mixed with the above-mentioned complexed metal hydroxide in advance, or the organic flame retardant may be dissolved in a solvent and added thereto. You may use the thing which added the thing and desolvated and surface-treated.

The content of the organic flame retardant is determined by the amount of the composite metal hydroxide used (polyhedral composite metal hydroxide and conventional thin plate composite metal used as the case may be). It is preferable to set it in the range of 1 to 10% by weight of the total amount of hydroxide). It is particularly preferably 1 to 5% by weight.

On the other hand, examples of the red phosphorus flame retardant include red phosphorus powder or red phosphorus powder whose surface is coated with various organic and inorganic substances. The content of the red phosphorus flame retardant is the same as in the case of the organic flame retardant, the amount of the complex metal hydroxide used (conventionally used in the case of polyhedral complex metal hydroxide). It is preferable to set it in the range of 1 to 10% by weight, and particularly preferably 1 to 5% by weight of the total amount of the thin plate-shaped composite metal hydroxide.

The above-mentioned organic flame retardant may be blended after being mechanically mixed with the above-mentioned composite metal hydroxide in advance, or the organic flame retardant may be dissolved in a solvent and added to the above-mentioned composite metal hydroxide. You may use the thing which added the thing and desolvated and surface-treated.

Then, in the resin composition for semiconductor encapsulation according to the present invention, suitable combinations of the respective components including the above-mentioned components A to C are as follows. That is, as the phenol resin (component B) together with the specific epoxy resin (component A), a phenol aralkyl resin is preferable from the viewpoint of its fluidity. Further, it is preferable to use fused silica powder as the inorganic filler. further,
In addition to each of these components, when the complexed metal hydroxide as described above is used, it is preferable to use waxes because the release property tends to decrease.

The resin composition for semiconductor encapsulation according to the present invention comprises
For example, it can be manufactured as follows. That is, a specific epoxy resin (A component), a phenolic resin (B component), a specific polyhedral complex metal hydroxide (C component) and an inorganic filler and, if necessary, other additives in a predetermined ratio. And mix thoroughly with a mixer or the like. Next, this mixture is melt-kneaded in a heating state using a kneading machine such as a mixing roll machine or a kneader, and this is cooled to room temperature. Then, crush by known means,
The desired resin composition for encapsulating a semiconductor can be produced by a series of steps of tableting as necessary.

Alternatively, a series of steps in which the mixture of the above-mentioned resin composition for semiconductor encapsulation is introduced into a kneading machine and kneaded in a molten state, and then continuously molded into substantially columnar granules or pellets The resin composition for semiconductor encapsulation can also be produced by.

Further, a method of receiving the mixture of the resin composition for semiconductor encapsulation on a pallet, cooling it, press rolling, rolling, or applying a mixture of solvents to form a sheet, etc. Thus, a sheet-shaped resin composition for encapsulating a semiconductor can be manufactured.

The method for sealing a semiconductor element using the thus obtained resin composition for semiconductor encapsulation (powder, tablet, granule, etc.) is not particularly limited.
It can be performed by a known molding method such as ordinary transfer molding.

Using the sheet-shaped resin composition for semiconductor encapsulation, for example, a semiconductor device by flip chip mounting can be manufactured as follows. That is, the sheet-shaped semiconductor encapsulating resin composition is arranged on the electrode surface side of a semiconductor element having bonding bumps or on the bump bonding side of a circuit board, and the semiconductor element and the circuit board are bumped. The semiconductor device can be manufactured by flip-chip mounting by bonding and sealing the both by resin sealing.

Next, examples will be described together with comparative examples.

First, the following materials were prepared.

[Epoxy Resin A] Using 30 parts by weight of biphenol (hereinafter abbreviated as “part”) in which all R _{1 to} R ₄ are hydrogen atoms in the above formula (1) and 70 parts of o-cresol novolac phenol. A specific epoxy compound (epoxy equivalent 200) was produced according to the above-mentioned production method.

[Epoxy resin B] Cresol novolac type epoxy resin (epoxy equivalent 195)

[Phenol Resin] Phenol aralkyl resin represented by the above formula (4) (hydroxyl equivalent 174, softening point 70 ° C.)

[Curing Accelerator] Triphenylphosphine

[Inorganic Filler] Fused silica powder (spherical,
(Average particle size 25 μm, specific surface area 1.4 m ² / g)

[Silane coupling agent] β- (3,4-
Epoxycyclohexyl) ethyltrimethoxysilane

[Complexed Metal Hydroxide] Next, prior to Examples, polyhedral shaped composite metal hydroxides shown in Tables 1 and 2 below were prepared. The polyhedral composite metal hydroxide was produced according to the above-described method for producing the polyhedral composite metal hydroxide.

[0077]

[Table 1]

[0078]

[Table 2]

[0079]

[Examples 1 to 6 and Comparative Examples 1 to 3]
The components shown in Table 4 were blended in the proportions shown in the table, and melt-kneaded for 3 minutes with a mixing roll machine (temperature 100 ° C.),
After cooling and solidifying, the powder was pulverized to obtain the desired powdery epoxy resin composition.

[0080]

[Table 3]

[0081]

[Table 4]

Using the thus obtained epoxy resin compositions of Examples and Comparative Examples, tablets were formed into flame retardant test pieces under molding conditions of 175 ° C. × 70 kg / cm ² × 120 seconds. Also, with TOWA automatic molding machine, L
A QFP-114 (size: 20 mm x 20 mm x thickness 1.4 mm) package was molded. Using these flame retardant test pieces and packages, flame retardancy, wire flow and solder resistance were measured and evaluated. The results are also shown in Tables 5 to 6 below.

[Flame Retardancy] Flame retardancy was evaluated according to the method of UL94 V-0 standard. In addition, passing means 94-V0 passing.

[Wire Flow] Regarding the above-mentioned package, first, the occurrence of defects such as deformation of the gold wire was measured by observing a transmission image inside the package with a soft X-ray device. As a result of the measurement, those in which the deformation of the gold wire was confirmed were evaluated as ×, and those in which the deformation of the gold wire was not confirmed and a good package was evaluated were evaluated as ○.

[Soldering Resistance] The semiconductor device was used, and after it was allowed to absorb moisture at 85 ° C./85% RH × 168 hours, 21
VPS (vapor phase reflow) at 5 ° C. was performed for 90 seconds. And the number of cracks (out of 20)
Was measured.

[0086]

[Table 5]

[0087]

[Table 6]

From the results of Tables 5 and 6 above, the products of Examples showed not only excellent flame retardancy but also no problem in the wire flow and good results in soldering resistance. . On the other hand, in the case of the comparative example product, a problem occurred in the wire flow, and a good result was not obtained even in the solder resistance.

[0089]

As described above, the present invention contains the specific epoxy resin (A component) and the polyhedral complex metal hydroxide (C component) represented by the general formula (2). It is a resin composition for semiconductor encapsulation. As described above, since the complex metal hydroxide having the polyhedral shape (component C) is used, it has excellent flame retardancy and fluidity, and since it contains the specific epoxy resin (component A), it has solder resistance. It also has excellent reliability. Therefore, by encapsulating a semiconductor element with this resin composition for encapsulating a semiconductor, it is possible to obtain a highly reliable semiconductor device having excellent soldering reliability and the like.

The particle size distributions (c1) to (c) are used as the polyhedral composite metal hydroxide (C component).
By using the material having 3), it is possible to obtain a material having more excellent fluidity and flame retardancy.

[Brief description of drawings]

FIG. 1 is a scanning electron micrograph (magnification: 50,000 times) showing an example of a crystal shape of a polyhedral composite metal hydroxide used in the present invention.

FIG. 2 is a perspective view showing a hexagonal plate shape which is one of crystal shapes of a conventional composite metal hydroxide.

3A and 3B are explanatory views showing the outer shape of a conventional complexed metal hydroxide, wherein FIG. 3A is a plan view and FIG. 3B is a side view.

FIG. 4 is an explanatory view showing an example of the outer shape of the composite metal hydroxide of the present invention, (a) is a plan view and (b) is a side view.

FIG. 5 is an explanatory view showing another example of the outer shape of the complex metal hydroxide of the present invention, (a) is a plan view and (b) is a side view.

Continuation of front page (51) Int.Cl. ⁷ identification code FI // C08G 59/38 (58) Fields investigated (Int.Cl. ⁷ , DB name) C08L 63/00-63/10 C08K 3/22 C08G 59/62 H01L 23/29

Claims (4)

(57) [Claims] 1. A resin composition for semiconductor encapsulation, which contains the following components (A) to (C). (A) Biphenols (a1) represented by the following general formula (1) and polyhydric phenols (a2) other than the above biphenols (a1) are mixed at a weight mixing ratio (a1 / a2) of a.
An epoxy compound obtained by subjecting a mixed polyphenol obtained by mixing at a ratio of 1 / a2 = 20/80 to 95/5 to an epihalohydrin for an addition reaction and a ring-closing reaction. [Chemical 1] (B) Phenolic resin. (C) A polyhedral complex metal hydroxide represented by the following general formula (2). Embedded image m (M _a O _b ) · n (Q _d O _e ) · cH ₂ O (2) [In the above formula (2), M and Q are different metal elements, and Q is a period. Table IVa, Va, VIa, VII
It is a metal element belonging to a group selected from a, VIII, Ib, and IIb. In addition, m, n, a, b, c, d, and e are positive numbers and may have the same value or different values. ] 2. The polyhedral composite metal hydroxide as the component (C) has a particle size distribution (c1) to (c) shown below.
The resin composition for semiconductor encapsulation according to claim 1, which comprises 3). (C1) 10 to 35% by weight of particles having a particle size of less than 1.3 μm. (C2) 50 having a particle size of 1.3 to less than 2.0 μm
~ 65% by weight. (C3) 10 to 30% by weight of particles having a particle size of 2.0 μm or more. 3. The resin composition for semiconductor encapsulation according to claim 1 or 2, wherein the resin composition for semiconductor encapsulation contains a nitrogen-containing organic compound. 4. A semiconductor device obtained by encapsulating a semiconductor element using the resin composition for encapsulating a semiconductor according to claim 1.