JP2003082243A - Resin composition for sealing semiconductor and semiconductor device using the resin composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin composition for sealing semiconductors, having high safety, soldering resistance, reliability on moisture resistance and flame retardancy and also excellent with respect to flowability, and to provide a semiconductor device using the resin composition. SOLUTION: This resin composition comprises a thermosetting resin such as an epoxy resin, a curing agent and a compounded metal hydroxide with specific crystal structure; wherein the compounded metal hydroxide is in the form of powder of microparticles having a specific size distribution, i.e., the microparticles comprise 10-55 wt.% of particles each <1.3 μm in size, 35-65 wt.% of particles 1.3-2.0 μm in size and 10-30 wt.% of particles each >=2.0 μm in size.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for semiconductor encapsulation excellent in flame retardancy, moisture resistance reliability and fluidity, and a semiconductor device using the same.

[0002]

2. Description of the Related Art Conventionally, semiconductor elements such as transistors, ICs, and LSIs have been encapsulated with ceramics or the like to be semiconductor devices, but recently, from the viewpoint of manufacturing cost and mass productivity, resin encapsulation using plastics is used. Type semiconductor devices have become mainstream. An epoxy resin composition has been conventionally used for this type of resin encapsulation, and has achieved good results. However, due to technological innovation in the semiconductor field, the degree of integration has been improved, and the device size has been increased and wiring has been reduced.
As the pitch becomes narrower and the package tends to be smaller and thinner, higher reliability of the sealing material is demanded accordingly.

On the other hand, it is essential for electronic parts such as semiconductor devices to comply with UL94 V-0, which is a standard for flame retardancy, and as a method of imparting flame retardancy to a resin composition for semiconductor encapsulation. The method of adding a brominated epoxy resin or antimony trioxide is generally used.

However, there are two major problems with the above-mentioned flame retarding technology.

The first problem is that the harmfulness of antimony trioxide itself, the harmfulness to the human body due to the generation of hydrogen bromide, bromine gas, antimony bromide, etc. during combustion, and the corrosiveness of equipment. ing.

A second problem is that when a semiconductor device employing the above flame retarding technology is left at high temperature for a long time, aluminum wiring on a semiconductor element corrodes due to the effect of liberated bromine, causing a failure of the semiconductor device. As a result, the high temperature reliability is deteriorated.

In order to solve the above problems, a method has been proposed in which a non-halogen-non-antimony metal hydroxide is added as a flame retardant as an inorganic flame retardant.
However, in this method, a large amount (for example, 40% by weight or more) of metal hydroxide must be contained, resulting in the following new problems.

First, swelling of the semiconductor device during soldering,
The point is that cracks are likely to occur. 2. Description of the Related Art In recent years, surface mounting has become a mainstream mounting method for semiconductor devices, and soldering methods such as solder immersion, infrared reflow, and vapor phase reflow are selected and used during soldering. Whichever process is adopted, the semiconductor device has a high temperature (for example, 21
5 to 260 ° C.), a conventional semiconductor device with resin encapsulation using a resin composition containing a metal hydroxide absorbs a large amount of metal hydroxide. There is a possibility that the so-called solder resistance may be deteriorated, that is, the semiconductor device may be swollen or cracked due to rapid vaporization.

Further, regarding the moisture resistance reliability, it is 80 to 130.
There is a problem that the semiconductor element function is deteriorated under a high temperature and high humidity environment of 70 ° C. and 70% to 100% relative humidity. Further, in semiconductor devices such as power devices that generate a large amount of heat or semiconductor devices that are mounted around the engine of an automobile, a dehydration reaction may occur after long-term use, which may cause a problem that moisture resistance reliability decreases. is there.

[0010]

As described above, the above-mentioned problems occur in the conventional flame-retardant technology. Therefore, it is a safe material that does not generate harmful gas during combustion, and is suitable for soldering semiconductor devices. Does not cause swelling or cracking of semiconductor device due to dehydration of metal hydroxide, and does not cause corrosion of aluminum wiring on semiconductor element or deterioration of moisture resistance reliability even if left in a high temperature and high humidity atmosphere for a long time. There is a demand for the development of technology for computerization.

Therefore, the applicant of the present invention has proposed that a thermosetting resin composition for semiconductor encapsulation in which a metal hydroxide and a metal oxide or a composite metal hydroxide thereof are used together with a thermosetting resin and a curing agent. I proposed a product and tried to solve the above problems (W
O95 / 06085). By using this resin composition for semiconductor encapsulation, the effects of improving flame retardancy and moisture resistance reliability were certainly obtained, but new problems occurred. That is, although semiconductor packages in recent years tend to be thinner, moldability such as deformation of the gold wire occurs due to a decrease in fluidity of the resin composition as a sealing material during package molding such as transfer molding. May be a problem.

The present invention has been made in view of the above circumstances, and is a resin composition for semiconductor encapsulation which is excellent not only in safety, but also in moisture resistance reliability and flame retardancy, and excellent in moldability. It is intended to provide a used semiconductor device.

[0013]

In order to achieve the above-mentioned object, the inventors of the present invention have excellent safety, solder resistance, moisture resistance reliability and flame retardancy as well as excellent fluidity for semiconductor encapsulation. A series of studies were conducted to obtain a resin composition. In carrying out this research, first, research was repeated to find out the cause of the decrease in fluidity when using a conventional composite metal hydroxide-containing resin composition for semiconductor encapsulation.

As a result, it was found that the decrease in fluidity was due to the crystal shape of the complexed metal hydroxide. That is, the crystal shape of the complexed metal hydroxide is usually
Basically, it has a flat plate shape such as a hexagonal plate shape or a scale shape, and in a sealing step such as transfer molding using a resin composition containing a composite metal hydroxide having such a crystal shape, It has been found that the fluidity is remarkably reduced, and as a result, the gold wire is deformed. Then, based on this finding, further research was conducted for the purpose of suppressing the decrease in fluidity.

As a result, the composite metal hydroxide does not have a flat plate shape such as a hexagonal plate shape or a scale shape as in the prior art, but has a polyhedral shape in which crystal growth is large in the thickness direction along with the length and width. It has been found that the use of the specific composite metal hydroxide having the above property suppresses deterioration of the fluidity of the resin composition to some extent. And as a result of further research aimed at further suppressing the deterioration of fluidity,
In the use of the above-mentioned specific composite metal hydroxide, by using the composite metal hydroxide having a specific particle size distribution and having a fine particle size, a very excellent suppression of deterioration of fluidity is achieved, and transfer molding is performed. The present invention has been completed by finding that there is no problem with time and the moldability can be improved.

That is, the present invention is a resin composition for semiconductor encapsulation containing the following components (a) to (c), wherein the component (c) has a particle size of less than 1.3 μm. Is 10
55% by weight, a mixed metal hydroxide having a particle diameter of 1.3 to less than 2.0 μm in an amount of 35 to 65% by weight, and a mixed metal hydroxide having a particle diameter of 2.0 μm or more in an amount of 10 to 30% by weight. A first feature is a resin composition for semiconductor encapsulation, which is characterized by being present. (A) Thermosetting resin. (B) Curing agent. (C) A polyhedral complex metal hydroxide represented by the following general formula (1).

[0017]

[Chemical 2]

A second aspect of the present invention is a semiconductor device obtained by encapsulating a semiconductor element using the resin composition for encapsulating a semiconductor.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described in detail.

The semiconductor encapsulating resin composition according to the present invention is
Thermosetting resin (component (a)) and curing agent (component (b))
And a specific composite metal hydroxide (component (c)) having a specific particle size distribution, which is usually formed into a powder or a tablet-like tablet. Alternatively, the resin composition may be melt-kneaded and then molded into a granular shape such as a substantially columnar shape, or a sheet-like sealing material formed into a sheet shape.

As the thermosetting resin (component (a)) used in the present invention, epoxy resin, polymaleimide resin, unsaturated polyester resin, phenol resin and the like can be used. In particular, for the purpose of sealing the semiconductor element, it is preferable to use an epoxy resin or a polymaleimide resin from the viewpoint of heat resistance.

The epoxy resin is not particularly limited, and those known per se can be used. For example,
Examples include epoxy resins such as bisphenol A type, phenol novolac type, cresol novolac type, and biphenyl type.

Among the above epoxy resins, the biphenyl type epoxy resin which is preferably used in terms of fluidity and solder resistance is represented by the following general formula (2).

[0024]

[Chemical 3]

R _{1 to} R ₄ in the above general formula (2) represent a hydrogen atom or an alkyl group, and as the alkyl group, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, sec- Examples thereof include linear or branched lower alkyl groups such as a butyl group and a tert-butyl group, and a methyl group is particularly preferable, and the above R _{1 to} R ₄ may be the same or different. Among them, from the viewpoint of low hygroscopicity and reactivity, it is particularly preferable to use a biphenyl type epoxy resin in which R _{1 to} R ₄ are all methyl groups.

The polymaleimide resin is not particularly limited, and those known per se can be used, and those having two or more maleimide groups in one molecule can be used. For example, N, N′-4,4′-diphenylmethane bismaleimide, 2,2-bis- [4- (4-maleimidophenoxy) phenyl] propane, or the like can be used.

As the curing agent (component (b)) used together with the thermosetting resin (component a), for example, phenol resin, acid anhydride, amine compound or the like known per se is used. When an epoxy resin is used as the thermosetting resin as the component (a), it is preferable to use a phenol resin. As such a phenolic resin,
Examples thereof include phenol novolac, cresol novolac, bisphenol A type novolac, naphthol novolac and phenol aralkyl resin. And
When a biphenyl type epoxy resin is used as the epoxy resin, it is preferable to use a phenol aralkyl resin as the curing agent.

When a polymaleimide resin is used as the thermosetting resin, examples of the curing agent include alkenylphenols obtained by reacting the above curing agent for epoxy resin with allyl halide in the presence of alkali. Examples include amines.

When the thermosetting resin (component (a)) is an epoxy resin and the curing agent (component (b)) is a phenol resin, the content ratio of both is the epoxy resin in the epoxy resin. The hydroxyl group in the phenol resin is preferably set to 0.7 to 1.3 equivalents per one equivalent of the group, and particularly preferably set to 0.9 to 1.1 equivalents.

The composite metal hydroxide (component (c)) having a specific particle size distribution, which is used together with the thermosetting resin (component (a)) and the curing agent (component (b)), has the following general formula: It is represented by (1).

[0031]

[Chemical 4]

The composite metal hydroxide of the component (c) in the resin composition for semiconductor encapsulation of the present invention does not have a so-called thin plate-like or scale-like crystal shape, but a vertical,
Large crystal growth in the thickness direction (Z-axis direction) along with the horizontal direction,
For example, a plate-shaped crystal having a granular crystal shape obtained by crystal growth in the thickness direction (Z-axis direction) to approximate a three-dimensional and spherical shape, for example, a polyhedron such as a dodecahedron, an octahedron, or a tetrahedron It has a shape and usually consists of a mixture thereof. Of course, the above-mentioned polyhedron shape can be approximated to a more three-dimensional and spherical shape by changing the shape of the polyhedron by crushing or grinding in addition to the method of crystal growth. As described above, in the present invention, by using the specific composite metal hydroxide, it is possible to suppress the decrease in the fluidity of the resin composition as compared with the conventional one.

In the above-mentioned composite metal hydroxide, for example, by controlling various conditions in the production process of the composite metal hydroxide, crystal growth in the thickness direction (Z-axis direction) is large in the vertical and horizontal directions. It is possible to obtain a composite metal hydroxide having a desired polyhedral shape, for example, a substantially dodecahedron, a substantially octahedron, a substantially tetrahedron or the like.

The composite metal hydroxide used as the component (c) in the present invention preferably has a polyhedral structure with a crystal outline of approximately octahedron, and has an aspect ratio of 1 to 8, preferably 1 to 7, and particularly. Preferably, the one adjusted to 1 to 4 is used. Specifically, it can be manufactured as follows.

First, a zinc nitrate compound is added to an aqueous magnesium hydroxide solution to prepare a partially complexed metal hydroxide as a raw material. Next, this raw material is heated to 800 to 1500 ° C.
By firing in the range of, more preferably in the range of 1000 to 1300 ° C., a composite metal oxide is produced.
This complex metal oxide is m (MgO) .n (ZnO)
Further, at least one selected from the group consisting of a carboxylic acid, a metal salt of a carboxylic acid, an inorganic acid, and a metal salt of an inorganic acid is added to the composite metal oxide in an amount of about 0.1 to 6 mol. % By performing a hydration reaction at a temperature of 40 ° C. or higher with vigorous stirring in a system in a coexisting aqueous medium,
A composite metal hydroxide crystal as the component (c) of the present invention represented by Mg _1-X Zn _X (OH) ₂ can be produced.

In the above-mentioned production method, not only the partially composite metal hydroxide obtained by the above-mentioned method as a raw material but also the
For example, a complexed metal hydroxide obtained by a coprecipitation method,
A mixture of magnesium hydroxide and Zn, a mixture of magnesium oxide and Zn oxide, a mixture of magnesium carbonate and Zn carbonate, and the like can also be used. Further, stirring during the hydration reaction improves homogeneity and dispersibility, improves contact efficiency with at least one selected from the group consisting of carboxylic acids, metal salts of carboxylic acids, inorganic acids and metal salts of inorganic acids. Therefore, strong stirring is preferable, and more powerful high shear stirring is more preferable. Such stirring is preferably performed, for example, in a rotary blade type stirrer at a peripheral speed of the rotary blade of 5 m / sec or more.

The carboxylic acid is not particularly limited, but monocarboxylic acid, oxycarboxylic acid (oxy acid) and the like are preferable. Examples of the monocarboxylic acid include, for example, formic acid, acetic acid, propionic acid,
Butyric acid, valeric acid, caproic acid, acrylic acid, crotonic acid, and the like, examples of the oxycarboxylic acid (oxy acid), for example, glycolic acid, lactic acid, hydroacrylic acid, α-oxybutyric acid, glyceric acid, salicylic acid, Examples thereof include benzoic acid and gallic acid. The metal salt of the carboxylic acid is not particularly limited,
Preferred are magnesium acetate, zinc acetate and the like. Further, the above-mentioned inorganic acid is not particularly limited, but nitric acid, hydrochloric acid and the like are preferable. The metal salt of the inorganic acid is not particularly limited, but magnesium nitrate, zinc nitrate and the like are preferable.

The composite metal hydroxide (component (c)) having the above polyhedral shape contains 10 to 55% by weight of the composite metal hydroxide having a particle size of less than 1.3 μm and a particle size of 1.3 to 2. 0.0μ
It is important that the mixed metal hydroxide having a particle size of less than m is 35 to 65% by weight, and the mixed metal hydroxide having a particle diameter of 2.0 μm or more is 10 to 30% by weight. A laser type particle size measuring machine is used for measuring the particle size distribution.

In such a particle size distribution, a particle size of 1.3
When the content of the particles having a diameter of less than μm is less than 10% by weight, the desired flame retardant effect is poor, and conversely, when it exceeds 55% by weight, the fluidity is impaired. On the other hand, if the particle diameter is 2.0 μm or more and less than 10% by weight, the fluidity decreases, and conversely, if it exceeds 30% by weight, the flame retardant effect becomes poor. In addition, the usual lower limit of the particle size in the above-mentioned particle size distribution is 0.1 μm, and the usual upper limit of the particle size is 15 μm.

The maximum particle size of the composite metal hydroxide which is the component (c) is preferably 10 μm or less. Particularly preferably, the maximum particle size is 6 μm or less. That is, when the maximum particle size exceeds 10 μm, there is a tendency that a large amount is required to have desired flame retardancy.

The specific surface area of the composite metal hydroxide as the component (c) is preferably in the range of 2.0 to 4.0 m ² / g. The specific surface area of the component (c) is measured by the BET adsorption method.

The aspect ratio of the composite metal hydroxide (component (c)) is 1 to 8, preferably 1 to 7, and particularly preferably 1 to 4. The aspect ratio here is expressed by the ratio of the major axis and the minor axis of the composite metal hydroxide. That is, when the aspect ratio exceeds 8, the effect of decreasing the viscosity when the resin composition containing the complexed metal hydroxide is melted becomes poor.

Further, the complex metal hydroxide ((c)
The content of the composite metal hydroxide containing the component) is 0.1 to 30% by weight, particularly 0.5 to 28% by weight, based on the entire resin composition.
It is preferable to set in the range of, and the excellent flame retarding effect can be exhibited within the range of this content. That is, if the complexed metal hydroxide is less than 0.1% by weight, the flame retarding effect tends to decrease, and if it exceeds 30% by weight, the chloride ion concentration in the cured resin composition increases. Therefore, the humidity resistance tends to gradually decrease.

The resin composition for semiconductor encapsulation of the present invention may contain an inorganic filler as the component (d) together with the components (a) to (c). The inorganic filler is not particularly limited, and various known fillers can be used. Examples thereof include quartz glass powder, talc, silica powder, alumina powder, calcium carbonate, boron nitride, silicon nitride and carbon black powder. These can be used alone or in combination of two or more kinds. Then, as the above-mentioned inorganic filler, silica powder is preferably used from the viewpoint that the linear expansion coefficient of the obtained cured product can be reduced. Above all, it is preferable to use fused silica powder, particularly spherical fused silica powder, as the silica powder from the viewpoint of good fluidity of the resin composition.

The average particle size of the inorganic filler is preferably in the range of 10 to 70 μm, more preferably 10 to 50 μm. That is, as described above, when the composite metal hydroxide has a specific particle size distribution and the average particle size of the inorganic filler is within the above range, good fluidity of the resin composition can be obtained. Further, as the above-mentioned silica powder, ground silica powder obtained by grinding the silica powder may be used depending on the case.

The content of the above-mentioned inorganic filler is such that the total amount of the whole inorganic substance obtained by adding the complexing metal hydroxide to the inorganic filler is 60 to 92% by weight, preferably the whole resin composition for semiconductor encapsulation. 70 to 90% by weight. When the total amount of the inorganic filler or the inorganic compound of the composite metal hydroxide is less than 60% by weight, the flame retardancy tends to decrease.

Further, the composite metal hydroxide ((c))
Component) and the above-mentioned inorganic filler ((d) component) are used in combination in a weight ratio ((c) component / (d) component) of 0.01 / 1 to 1/1. Is preferably set to 0.01 to 0.75 / 1.
And

The resin composition for semiconductor encapsulation of the present invention has a chlorine ion concentration in the extracted water extracted according to the following method of 200 μg per 1 g of the cured product of the resin composition.
The following is preferable. That is, 5 g of the powdered product of the cured product of the resin composition and 50 ml of distilled water were placed in a dedicated extraction container, and the container was left in a dryer at 160 ° C. for 20 hours to extract water (pH 6.0 to 8.0). To extract. Then, the extracted water is subjected to ion chromatographic analysis to measure the chlorine ion amount (α)
To measure. Since this chlorine ion amount (α) is a value obtained by diluting the ion amount in the cured resin composition 10 times, the amount of chlorine ions per 1 g of cured resin composition is calculated by the following formula. The pH of the extracted water is 6.0 to 8.
A range of 0 is preferred. Further, in producing the thermosetting resin composition cured product, for example, in the case of an epoxy resin composition cured product, the cured product molding conditions are transfer molding (conditions: 175 ° C. × 2 minutes) and 175 ° C. × 5. Preference is given to setting a post-curing time.

[0049]

[Equation 1]

That is, when the concentration of chlorine ions contained in the extracted water of the cured product of the resin composition exceeds 200 μg, the semiconductor element, the lead frame and the like are likely to be corroded and the moisture resistance tends to be deteriorated. become.

In addition to the components (a) to (c) and the component (d), the resin composition for semiconductor encapsulation of the present invention contains:
A curing accelerator, a pigment, a release agent, a surface treatment agent, a flexibility-imparting agent and the like can be appropriately added as necessary.

As the curing accelerator, those known per se, for example, tertiary amines such as 1,8-diaza-bicyclo [5,4,0] undecene-7 and triethylenediamine,
Examples thereof include imidazoles such as 2-methylimidazole and phosphorus-based curing accelerators such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate.

Examples of the pigment include carbon black and titanium oxide. Examples of the release agent include polyethylene wax, paraffin, fatty acid ester, and fatty acid salt.

Further, the surface treatment agent may be a coupling agent such as a silane coupling agent, and the flexibility imparting agent may be a silicone resin or butadiene-acrylonitrile rubber.

Further, in the resin composition for semiconductor encapsulation of the present invention, it is preferable to further use an organic flame retardant or a red phosphorus flame retardant together because the amount of the component (c) used can be reduced. Examples of such an organic flame retardant include a nitrogen-containing organic compound, a phosphorus-containing organic compound, a phosphazene-based compound, and the like, and the nitrogen-containing organic compound is particularly preferably used.

Examples of the nitrogen-containing organic compound include compounds having a heterocyclic skeleton such as a melamine derivative, a cyanurate derivative and an isocyanurate derivative. These organic flame retardants can be used alone or in combination of two or more.

The organic flame retardant may be blended after being mechanically mixed with the complexed metal hydroxide as the component (c) in advance, or the organic flame retardant may be dissolved in a solvent to form a mixture. You may use the thing which added the said composite metal hydroxide and desolvated and surface-treated.

The content of the above organic flame retardant is 0.5 to 30% by weight, preferably 1 to 5% by weight, based on the entire resin composition.

As the red phosphorus flame retardant, there may be mentioned red phosphorus powder or red phosphorus powder whose surface is coated with various organic or inorganic substances. The content of the red phosphorus flame retardant is 0.03 to 10% by weight, preferably 0.05 to 5% by weight, based on the entire resin composition, as in the case of the organic flame retardant.

In the resin composition for semiconductor encapsulation of the present invention, suitable combinations of the respective components including the components (a) to (c) are as follows.

That is, the thermosetting resin (component (a)) is preferably an epoxy resin, and above all, a biphenyl epoxy resin is preferable from the viewpoint of good fluidity, and as the curing agent (component (b)). Is preferably a phenol aralkyl resin from the viewpoint of its fluidity. Then, a composite metal hydroxide having a specific particle size distribution (component (c))
At the same time, it is preferable to use fused silica powder as the inorganic filler (component (d)). Further, in addition to these, when a tendency of decreasing releasability is observed, waxes, particularly polyethylene wax or ester wax having a high acid value of 30 or more (upper limit is about 200) are used. It is preferable.

The resin composition for semiconductor encapsulation of the present invention can be produced, for example, as follows.

That is, a thermosetting resin (component (a)), a curing agent (component (b)), a composite metal hydroxide having a specific particle size distribution (component (c)), an inorganic filler ((d )component)
And, if necessary, other additives are blended in a predetermined ratio. Next, this mixture is melt-kneaded in a heating state using a kneading machine such as a mixing roll machine, and this is cooled to room temperature. Then, the resin composition for semiconductor encapsulation of the present invention can be produced by a series of steps of crushing by a known means and tableting if necessary.

Alternatively, the mixture of the above-mentioned resin composition for semiconductor encapsulation is introduced into a kneading machine and kneaded in a molten state, and thereafter, this is continuously molded into a substantially columnar granular body in a granular process. The semiconductor encapsulating resin composition can be produced.

Further, a method of receiving the mixture of the resin composition for semiconductor encapsulation on a pallet and cooling it, followed by press rolling, roll rolling, or coating with a mixture of solvents to form a sheet. Thus, a sheet-shaped resin composition for semiconductor encapsulation can be produced.

The resin composition for semiconductor encapsulation of the present invention thus obtained (powder, tablet, granule, etc.)
The method for sealing the semiconductor element using is not particularly limited, and a known molding method such as general transfer molding can be used.

Using the sheet-shaped resin composition for semiconductor encapsulation, for example, a semiconductor device by flip-chip mounting can be manufactured as follows. That is,
The sheet-shaped semiconductor encapsulating resin composition is arranged on the electrode surface side of a semiconductor element having bonding bumps or on the bump bonding side of a circuit board, and the semiconductor element and the circuit board are bump bonded. At the same time, both are subjected to adhesive sealing by resin sealing, so that the semiconductor device can be manufactured by flip-chip mounting.

[0068]

EXAMPLES Next, the present invention will be specifically described with reference to examples.

First, the following materials were prepared.

[Component (a)] Biphenyl epoxy resin represented by the general formula (2) [wherein R _{1 to} R ₄ are all methyl groups: epoxy equivalent 195]

[Component (b)] Phenol aralkyl resin (hydroxyl equivalent 174)

[Component (d)] Fused silica powder having an average particle size of 30 μm

[Phosphorus-Based Curing Accelerator] Triphenylphosphine

[Ester wax] Carnauba wax (acid value 2 to 10)

[Olefin wax] Polyethylene wax (acid value 160)

Next, various composite metal hydroxides shown in Table 1 below were prepared as the component (c). In addition, Table 1 below
The complexed metal hydroxide therein was produced according to the above-mentioned method for producing the complexed metal hydroxide.

[0077]

[Table 1]

<Examples 1 to 8 and Comparative Examples 1 and 2> The components shown in Tables 2 to 3 below were blended in the proportions shown in the same table, and melt-kneaded for 3 minutes with a mixing roll machine (temperature 100 ° C.). After cooling and solidifying, it was pulverized to obtain the intended powdery epoxy resin composition for encapsulating a semiconductor.

[0079]

[Table 2]

[0080]

[Table 3]

Using the epoxy resin compositions of Examples and Comparative Examples obtained as described above, the chloride ion concentration of the cured product was measured. The chlorine ion concentration was measured according to the method described above.
The setting was 5 ° C. × 2 minutes and post-curing 175 ° C. × 5 hours. Furthermore, a test piece having a thickness of 1/16 inch was molded using each epoxy resin composition, and flame retardancy was evaluated according to the method of UL94 V-0 standard. In addition, passing means 94-V0 passing. The results of these measurements and evaluations are shown in Tables 4 to 5 below.

Then, using each epoxy resin composition, the spiral flow value and the flow tester viscosity were measured according to the following methods.

<Spiral Flow Value> Using a mold for spiral flow measurement, EMMI 1-6 at 175 ± 5 ° C.
According to 6, the spiral flow value (cm) was measured.

<Flow Tester Viscosity> 2 g of each of the above epoxy resin compositions was precisely weighed and molded into a tablet. Then, put this in the pot of the Koka type flow tester, 1
The measurement was performed by applying a load of 0 kg. The melt viscosity (Pa · s) of the sample was determined from the moving speed of the piston when the molten epoxy resin composition was extruded through a hole (diameter 1.0 mm × 10 mm) of a die.

Using the epoxy resin compositions obtained in the above Examples and Comparative Examples, semiconductor elements were transfer-molded (conditions: 175 ° C. × 2 minutes) and post-cured at 175 ° C. × 5 hours to give semiconductors. I got the device. This semiconductor device is an 80-pin QFP (quad flat package, size: 20 × 14 × 2 mm), and the die pad size is 8 × 8 mm.

With respect to the semiconductor device thus obtained, first, the occurrence of defects such as deformation of the gold wire was measured by observing a transmission image inside the package with a soft X-ray device. As a result of the measurement, the deformation of the gold wire was confirmed as x, and the deformation of the gold wire was not confirmed as a good package was evaluated as o.
~ Shown in Table 5.

[0087]

[Table 4]

[0088]

[Table 5]

From Tables 4 to 5 above, it is clear that all of the examples have high flame retardancy levels, high spiral flow values, and low flow tester viscosities, and therefore are excellent in fluidity. Is. Further, since the gold wire was not deformed, it can be said that the gold wire has good formability.

On the other hand, in Comparative Examples 1 and 2, there was no problem with respect to the flame retardance level, but the spiral flow value was lower and the flow tester viscosity was significantly higher than that of the products of Examples, so the fluidity was poor. You can see that This is also clear from the fact that deformation of the gold wire has been confirmed.

Further, as the epoxy resin component in the above-mentioned Example 1, the biphenyl type epoxy resin in which R _{1 to} R ₄ in the general formula (2) are all hydrogen and the R ₁ in the general formula (2) are used. A biphenyl type epoxy resin in which all of R ₄ to R ₄ are methyl groups was replaced with a mixed type epoxy resin in which the weight ratio was 1: 1. Otherwise, Example 1
An epoxy resin composition was prepared by setting the same compounding ratio as in. Using this epoxy resin composition, the same measurement and evaluation as above were carried out, and as a result, good results substantially the same as those in the above-mentioned examples were obtained.

[0092]

As described above, the present invention is a semiconductor encapsulating resin composition containing a specific composite metal hydroxide represented by the general formula (1) having a specific particle size distribution. . Furthermore, it has a polyhedral crystal shape instead of the conventional flat crystal shape, and has a specific particle size distribution, so it has excellent fluidity, and problems such as deformation of the gold wire occur when the semiconductor package is sealed. The moldability is improved.

Furthermore, when the maximum particle size, sphericity, and specific surface area of the specific composite metal hydroxide having the above-mentioned crystal shape are in the specific ranges, respectively, an excellent flame retardant effect is obtained. The effect that the deterioration of the fluidity is further suppressed and the moldability is further improved is exhibited.

Therefore, the semiconductor device encapsulated using the resin composition for semiconductor encapsulation of the present invention has a flame-retardant technique excellent in safety and the reliability of the semiconductor device is remarkably improved. Moreover, even in the case of manufacturing a semiconductor device by transfer molding using the resin composition for semiconductor encapsulation or a semiconductor device using the sheet-shaped resin composition for semiconductor encapsulation, the moldability thereof is excellent. In particular, it is particularly effective for thin and large-sized semiconductor devices among semiconductor devices, and has an extremely high industrial utility value.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) C08K 3/22 C08K 3/22 3/36 3/36 5/00 5/00 7/00 7/00 C08L 63/00 C08L 63/00 C H01L 23/29 B29K 61:04 23/31 63:00 // B29K 61:04 67:00 63:00 81:00 67:00 B29L 31:34 81:00 H01L 23 / 30 R B29L 31:34 F Term (reference) 4F206 AA37 AA39 AA40 AA41 AB11 AB16 AD02 AH37 JA02 JA07 JB17 JF02 JL02 4G047 AA04 AC03 AD04 4J002 AA021 CC042 CC052 CC062 DE061 DE008 DE008 DE008 DE008 DE008 DE008 DE008 DE 008 DE0 EN006 EU189 EU199 EW009 EW159 FA007 FD018 FD137 FD139 FD142 FD146 GQ01 GQ05 4J036 AA02 AF06 AF08 AF22 AF26 AF27 FA03 FB07 FB08 JA07 4M109 AA01 BA01 CA21 CA22 EA03 EA08 EA12 EB03 EB13 EC20 EC01 EC03 EC03

Claims (16)

[Claims] 1. A resin composition for semiconductor encapsulation containing the following components (a) to (c), wherein the component (c) has a particle size of 1.3.
10 to 55% by weight of a composite metal hydroxide having a particle size of less than μm, and 35 of a composite metal hydroxide having a particle size of 1.3 to less than 2.0 μm.
A resin composition for semiconductor encapsulation, which is a mixture of ˜65 wt% and a composite metal hydroxide having a particle size of 2.0 μm or more of 10 to 30 wt%. (A) Thermosetting resin. (B) Curing agent. (C) A composite metal hydroxide having a crystal structure represented by the following chemical formula. [Chemical 1] 2. The resin composition for semiconductor encapsulation according to claim 1, wherein the component (a) is one selected from an epoxy resin, a polymaleimide resin, an unsaturated polyester resin and a phenol resin. 3. The component (b) is one selected from a phenol resin, an acid anhydride and an amine compound.
The resin composition for semiconductor encapsulation according to the description. 4. The component (a) is an epoxy resin,
The resin composition for semiconductor encapsulation according to claim 1, wherein the component (b) is a phenol resin. 5. The resin composition for semiconductor encapsulation according to claim 1, wherein the maximum particle size of the component (c) is 10 μm or less. 6. The specific surface area of the component (c) is 2.0 to 4.0.
The resin composition for semiconductor encapsulation according to claim 1 or 5, which is m ² / g. 7. The resin composition for semiconductor encapsulation according to claim 1, wherein the component (c) has an aspect ratio of 1 to 8. 8. The resin composition for semiconductor encapsulation according to claim 1, wherein the content of the component (c) is 0.1 to 30% by weight based on the whole resin composition. 9. A cured product obtained by curing a resin composition for semiconductor encapsulation has a pH of an aqueous extract of 6.0 to 8.0 and a chloride ion concentration of 200 μg per 1 g of the cured product.
The resin composition for semiconductor encapsulation according to claim 1, which is g or less. 10. The resin composition for semiconductor encapsulation according to claim 1, further comprising an inorganic filler as the component (d). 11. The resin composition for semiconductor encapsulation according to claim 10, wherein the component (d) is silica powder. 12. The total amount of component (c) and component (d) is
The resin composition for semiconductor encapsulation according to claim 10, which accounts for 60 to 92% by weight of the entire resin composition. 13. The resin composition for semiconductor encapsulation according to claim 1, further comprising at least one of a nitrogen-containing organic compound, a phosphorus-containing organic compound and a phosphazene compound. 14. A semiconductor device obtained by encapsulating a semiconductor element using the resin composition for encapsulating a semiconductor according to claim 1. Description: 15. The semiconductor device according to claim 14, wherein the semiconductor element is resin-sealed by a transfer molding method. 16. The semiconductor device according to claim 14, wherein the electrode surface of the semiconductor element is sealed with a sheet-shaped resin composition for semiconductor sealing.