JP3468200B2 - Semiconductor device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and its manufacturing method.

[0002]

2. Description of the Related Art In recent years, with the miniaturization of semiconductor devices,
The area of the information storage capacitive element decreases, and the absolute value of the capacity tends to decrease. The capacitance C is determined by C = ε · S / d in the case of a parallel plate electrode structure, for example. Here, ε is the dielectric constant of the dielectric, S is the area of the capacitive electrode (hereinafter also referred to as the electrode), and d is the film thickness of the dielectric (distance between the electrodes). In order to secure the capacitance without increasing the area S of the electrode used for the information storage capacitive element, it is necessary to use a dielectric having a high dielectric constant ε or to reduce the film thickness d of the dielectric. is necessary. At present, the film thickness has been reduced to about 10 nm, and in high-integrated memory of 64 Mbits or more, the thinning of the capacitance insulating film is reaching its limit. Development is progressing, and tantalum oxide (T
a ₂ O ₅ ), a 1 Gbit DRAM is disclosed in
Barium strontium titanate as described in 86299 JP _{(Ba x Sr y Ti s O} t: BST) Using the like have been studied. Further, as a non-volatile memory, use of lead zirconate titanate (Pb _x Zr _y Ti _s O _t : PZT) as described in JP-A-10-189881 is being studied.

It is known that oxides such as BST and PZT do not exhibit good characteristics unless subjected to high temperature treatment.
In the manufacturing process, high temperature treatment of about 600 ° C or higher is required. Therefore, it is necessary to use a material that is difficult to oxidize even at high temperatures as a material for the capacitor electrode that contacts oxides such as BST and PZT. This is because when the capacitor electrode is a material that is easily oxidized, a redox reaction occurs at the contact interface between the electrode and the oxide at high temperature, and the characteristics of the oxide deteriorate.

From such a background, as a capacitive electrode material which is hard to be oxidized, for example, a noble metal material such as ruthenium (Ru) or platinum (Pt) and a conductive oxide such as ruthenium oxide (Ru _x O _y ) are examined. Has been done. However, when these capacitance electrode materials come into direct contact with silicon (Si), silicon (Si) diffuses inside the capacitance electrode.Therefore, a barrier film for preventing diffusion is required on the lower electrode of the capacitance lower electrode. Becomes As the barrier film, for example, a conductive film made of titanium nitride (Ti _x N _y ) or the like is used as described in JP-A-9-186299.

[0005]

[Problems to be Solved by the Invention] As described above, BST and P
It is known that oxides such as ZT do not exhibit good characteristics unless subjected to high temperature treatment, but it is sufficient to use high temperature treatment in an oxygen atmosphere for use in DRAM of 1 Gbit or more. It has become clear that it does not exhibit its characteristics. Therefore,
In the manufacturing process, a high temperature treatment of about 600 ° C or higher in an oxygen atmosphere is newly required. However, as described above, in a structure using a conductive film made of titanium nitride (Ti _x N _y ) or the like as a barrier film, for example, JP-A-10-189881 and Materials Research Society Journal (Materials
Research Society Bulletin) Volume 21, Issue 6 (1996)
As can be seen from the contents of pages 55 to 58 (issued in June 2016), the oxygen atoms in BST, PZT, etc. and the oxygen atoms in the oxygen atmosphere undergo high-temperature treatment at about 600 ° C or higher. There is a problem that it penetrates the lower electrode of the capacitor to reach the barrier film and oxidizes the barrier film to cause poor conduction.

Further, as a problem close to this, the gate electrode has a structure in which a barrier film is sandwiched between polycrystalline silicon and a metal film (so-called polymetal gate structure for realizing low resistance). In that case, there is a problem that the barrier film is oxidized during the heat treatment for improving the characteristics of the gate insulating film.

It is an object of the present invention to provide a highly reliable semiconductor device, a semiconductor device having a high yield, a semiconductor device having a capacitive element structure which is unlikely to cause a conduction failure, and oxidation. It is to solve at least one of the problems such as providing a semiconductor device having a difficult gate structure.

[0008]

Means for Solving the Problems The inventors of the present invention have conducted extensive studies to solve the above-mentioned problems, and the oxidation of the barrier film, which causes poor conduction, is caused by the formation of oxygen atoms at the crystal grain boundaries and inside the crystal grains of the barrier film. It was found that the process progresses due to diffusion. Therefore, it has been found that the grain boundary diffusion and intragranular diffusion of oxygen atoms in the barrier film should be suppressed in order to prevent the conduction failure. Then, the inventors have found that the grain boundary diffusion and intragranular diffusion of oxygen atoms in the barrier film can be suppressed by adding to the barrier film an additive element that narrows the oxygen diffusion path in the barrier film.

An object of the present invention is, for example, that the semiconductor substrate and the main constituent material formed on the one main surface side of the semiconductor substrate are titanium nitride, and one selected from the group consisting of at least silicon, cobalt, nickel and ruthenium. Conductive film containing different types of additive elements (hereinafter also referred to as barrier layer)
A first electrode (hereinafter also referred to as a capacitor lower electrode) formed in contact with the conductive film, a high dielectric constant or ferroelectric oxide film formed in contact with the first electrode, and This is solved by a semiconductor device including a second electrode (hereinafter, also referred to as a capacitor upper electrode) formed so as to be in contact with the film.

According to this structure, the diffusion coefficient of oxygen atoms in the barrier layer can be lowered, so that the barrier film can be prevented from being oxidized and the conduction failure of the semiconductor device can be prevented.

It is desirable that the content of the additive element in the main constituent material is 0.05 at.% Or more and 18 at.% Or less.

The subject of the present invention comprises, for example, a semiconductor substrate, a gate insulating film formed on one main surface of the semiconductor substrate, and a gate electrode formed on the gate insulating film. , The gate electrode is a polycrystalline silicon film formed in contact with the gate insulating film, the main constituent material formed in contact with the polycrystalline silicon film is titanium nitride, at least silicon, cobalt, nickel, The problem is solved by a semiconductor device including a barrier film containing one kind of additive element selected from the group consisting of ruthenium, and a metal film formed so as to be in contact with the barrier film.

With this structure, it is possible to provide a semiconductor device having a gate structure that is resistant to oxidation.

Another object of the present invention is, for example, on one main surface side of a silicon substrate, a conductive film, a first electrode in contact with the conductive film, and a high dielectric constant in contact with the first electrode. A method of manufacturing a semiconductor device, comprising a step of stacking a ferroelectric oxide film and a second electrode in contact with the oxide film in this order, wherein the conductive film is formed by nitriding. A process of forming titanium, a process of forming one kind of film selected from the group consisting of silicon, cobalt, nickel, and ruthenium, and a heat treatment process of raising the substrate temperature to 200 ° C. or higher are performed in this order. This is solved by the manufacturing method of the provided semiconductor device.

Here, the main constituent metal element of the conductive film means the metal element most contained in the conductive film.
Further, the main constituent material means a material that is contained most.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will now be described in detail with reference to the examples shown in the drawings. First, a DRAM (Dynamic Random Access Memory) which is a first embodiment of the present invention.
FIG. 1 shows the cross-sectional structure of an emory) memory cell. This is a cross-sectional view cut along AB or CD in the example of the plane layout shown in FIG. As shown in FIG. 1, the semiconductor device of this embodiment has a MOS (Metal Oxide Semiconducer) formed in the active region of the main surface of the silicon substrate 1.
A tor) type transistor 2 and an information storage capacitive element 3 disposed above the transistor 2 are provided. The insulating film 4 is a film for separating elements.

The MOS transistor 2 of the memory cell comprises a gate electrode 5, a gate insulating film 6 and a diffusion layer 7. The gate insulating film 6 is made of, for example, a silicon oxide film, a silicon nitride film, a ferroelectric film, or a laminated structure of these. The gate electrode 5 is made of, for example, a polycrystalline silicon film, a metal thin film, a metal silicide film, or a laminated structure of these. An insulating film 9 made of, for example, a silicon oxide film is formed on the upper and side walls of the gate electrode 5. A bit line 11 is formed on one diffusion layer 7 of the memory cell selection MOS transistor via a plug 10.
Are connected. For example, BPSG [Boron-doped Phospho Silicate Glas] is formed on the entire upper surface of the MOS transistor.
s] film, an SOG (Spin On Glass) film, or an insulating film 12 made of a silicon oxide film, a nitride film, or the like formed by a chemical vapor deposition method or a sputtering method.

An information storage capacitive element 3 is formed on the insulating film 12 covering the MOS transistor. The information storage capacitive element 3 is formed in the other diffusion layer 8 of the memory cell selection MOS transistor, for example, in a large number. They are connected via a plug 13 made of crystalline silicon. The information storage capacitive element 3 has a structure in which a conductive barrier film 14, a capacitive lower electrode 15, an oxide film 16 having a high dielectric constant or ferroelectricity, and a capacitive upper electrode 17 are laminated in this order from the lower layer. There is. The information storage capacitive element 23 is covered with an insulating film 1518.

Here, the barrier film 14 contains at least one additional element, and at least one of the additional elements has a function of narrowing the diffusion path of oxygen atoms in the barrier film 14. Specifically, when the main constituent material of the barrier film 14 is titanium nitride (Ti _x N _y ), this barrier film 14
Contains one kind of additive element selected from the group consisting of silicon (Si), cobalt (Co), nickel (Ni), and ruthenium (Ru). Further, when the main constituent material of the barrier film 14 is tungsten nitride (W _x N _y ), the barrier film 14 contains molybdenum (Mo) as an additional element. When the main constituent material of the barrier film 14 is ruthenium (Ru), the barrier film 14 contains silicon (Si), cobalt.
One kind of additional element selected from the group consisting of (Co) and nickel (Ni) is contained.

The effects of this embodiment will be described below.
In the conventional semiconductor device, when the oxide film 16 having a high dielectric constant or ferroelectricity is formed or the subsequent heat treatment is performed, the barrier film is exposed to a high temperature of about 600 ° C. or higher in an oxygen atmosphere. It has been experimentally revealed that the oxidation of 14 progresses and causes poor conduction. The inventors have found that the oxidation of the barrier film 14 proceeds due to the diffusion of oxygen atoms in the crystal grain boundaries and crystal grains of the barrier film 14. Therefore, the inventors have found that the conduction failure due to oxidation can be prevented by suppressing the grain boundary diffusion and the intragranular diffusion of oxygen. Further, the inventors have found that grain boundary diffusion and intragranular diffusion of oxygen atoms in the barrier film can be suppressed by adding to the barrier film an additive element that narrows the diffusion path of oxygen atoms in the barrier film. In the present embodiment, the barrier film 14 contains at least one kind of additional element, and at least one of the additional elements contains the additional element that narrows the diffusion path of oxygen atoms. Therefore, the grain boundary diffusion and intragranular diffusion of oxygen atoms in the barrier film 14 are suppressed, and the conduction failure is prevented. In order to explain this in detail, the results of calculating the diffusion coefficient of oxygen atoms at the grain boundaries by molecular dynamics simulation are shown below. The molecular dynamics simulation is, for example, the Journal of Applied Physics.
Physics, Vol. 54 (issued in 1983), pages 4864 to 4878, calculate the force acting on each atom through the interatomic potential, and solve Newton's equation of motion based on this force. This is a method of calculating the position of each atom at each time. For the method of calculating the diffusion coefficient by molecular dynamics simulation, see, for example, Physical Review B (Physical Res.
view B), Volume 29 (issued in 1984), pages 5363 to 5371. here,
An explanation will be given using an example in which the diffusion coefficient of oxygen atoms in the crystal grain boundaries and in the crystal grains is calculated by setting the temperature to 1000 K.
The effects described here can be similarly described even if the simulation conditions are changed.

In this example, the following effects could be clarified by incorporating the charge transfer into the above-mentioned molecular dynamics method and calculating the interaction between different elements. First, when the main constituent material of the barrier film is titanium nitride (Ti _x N _y ), the analysis result of the effect of the additional element on the diffusion coefficient of oxygen atoms at the grain boundaries will be described. FIG. 3 and FIG. 4 are results of analyzing the concentration dependence of the diffusion coefficient when silicon (Si), cobalt (Co), nickel (Ni), and ruthenium (Ru) are contained as additional elements. Here, D _GB0 represents the grain boundary diffusion coefficient when the additive element is not contained. D _IN0 indicates the intragranular diffusion coefficient when the additive element is not contained. As can be seen from FIG. 3, silicon (S
When the addition concentration of i), cobalt (Co), nickel (Ni), and ruthenium (Ru) is 0.05 at.% or more, the effect of suppressing diffusion becomes remarkable. In addition, as can be seen from FIG.
If it is 18 at.% Or more, the effect of suppressing diffusion becomes weak. This is because if the amount of the additive element is too large, the crystal structure of titanium nitride (Ti _x N _y ) which is the main constituent material is disturbed, so that oxygen easily diffuses.

Next, the result of analysis of the effect of the additional element on the diffusion coefficient of oxygen atoms at the crystal grain boundaries when the main constituent material of the barrier film is tungsten nitride (W _x N _y ) will be described. FIG. 5 and FIG. 6 are the results of analyzing the concentration dependence of the diffusion coefficient when molybdenum (Mo) is contained as an additional element. Here, D _GB0 represents the grain boundary diffusion coefficient when the additive element is not contained. D _IN0 indicates the intragranular diffusion coefficient when the additive element is not contained. As can be seen from FIG. 5, when the added concentration of molybdenum (Mo) is 0.05 at.% Or more, the effect of suppressing diffusion becomes remarkable. Further, as can be seen from FIG. 6, when the addition concentration is about 18 at.% Or more, the effect of suppressing diffusion becomes weak. This is because when the additive element is too much, the main constituent material is tungsten nitride (W _x N _y ).
This is because the crystal structure of is disturbed and oxygen easily diffuses.

Next, the main constituent material of the barrier film is ruthenium.
Regarding the case of (Ru), the result of analyzing the effect of the additional element on the diffusion coefficient of oxygen atoms at the grain boundaries will be described. 7 and 8 show silicon (S
i), cobalt (Co), when containing nickel (Ni),
It is the result of analyzing the concentration dependence of the diffusion coefficient. here,
D _GB0 represents the grain boundary diffusion coefficient when the additive element is not contained. D _IN0 indicates the intragranular diffusion coefficient when the additive element is not contained. As can be seen from Fig. 7, silicon (Si), cobalt
When the added concentration of (Co) and nickel (Ni) is 0.05 at.% Or more, the effect of suppressing diffusion becomes remarkable. Further, as can be seen from FIG. 8, when the addition concentration is about 18 at.% Or more, the effect of suppressing diffusion becomes weak. This is because the crystal structure of ruthenium (Ru), which is the main constituent material, is disturbed when the amount of the additive element is too large, and oxygen easily diffuses.
Therefore, the addition concentration is preferably 0.05 at.% Or more and 18 at.% Or less.

Next, a second embodiment of the present invention will be described.
A sectional structure of a DRAM (Dynamic Random Access Memory) memory cell is shown in FIG. This is also a cross-sectional view cut along AB or CD in the example of the plane layout shown in FIG. The difference between the second embodiment and the first embodiment is that another conductive film 19 is formed below the barrier film 14. Particularly, when the main constituent material of the capacitor lower electrode 15 is ruthenium (Ru) and the main constituent material of the barrier film 14 is titanium nitride (Ti _x N _y ), ruthenium (Ru) and titanium nitride (Ti _x Ny) are used. In order to make the crystal structure of N _y ) stable,
It is preferable to use titanium (Ti) as the conductive film 19. By making the crystal structure of ruthenium (Ru) and titanium nitride (Ti _x N _y ) stable, the crystal structure of the capacitive insulating film 16 becomes stable and the device characteristics are improved. Further, another layer or more may be present between the conductive film 14a and the plug 13.

Next, a third embodiment of the present invention will be described.
FIG. 16 shows a sectional structure of a DRAM (Dynamic Random Access Memory) memory cell. This is also a cross-sectional view cut along AB or CD in the example of the plane layout shown in FIG. The difference between the third embodiment and the first embodiment is that the conductive film 20 is formed in contact with the plug 13. In particular, the main constituent material of the plug 13 is tungsten nitride
In the case of (W _x N _y ), in order to improve the adhesiveness with the insulating film 12, it is preferable to form the conductive film 20 containing, for example, titanium nitride (Ti _x N _y ) as a main constituent material. . In this case, one or more additional films may exist between the conductive film 20 and the insulating film 12.

Next, a fourth embodiment of the present invention will be described.
FIG. 17 shows a cross-sectional structure of a DRAM (Dynamic Random Access Memory) memory cell. This is also a cross-sectional view cut along AB or CD in the example of the plane layout shown in FIG. The main difference between the fourth embodiment and the first embodiment is that
That is, the gate electrode 5 has a three-layer structure of a metal film 15a, a barrier film 15b, and a polycrystalline silicon film 15c (that is, a polymetal gate structure). Here, the barrier film 1
When the main constituent material of 5b is titanium nitride (Ti _x N _y ), the barrier film 15b is selected from the group consisting of silicon (Si), cobalt (Co), nickel (Ni), and ruthenium (Ru). Contains one type of additive element. When the main constituent material of the barrier film 15b is tungsten nitride (W _x N _y ), the barrier film 14 contains molybdenum (Mo) as an additional element. When the main constituent material of the barrier film 15b is ruthenium (Ru), the barrier film 15b contains one kind of additive element selected from the group consisting of silicon (Si), cobalt (Co), and nickel (Ni). Is included. by this,
The effect that the barrier film 15b is less likely to be oxidized is obtained. Since tungsten (W) or molybdenum (Mo) having a high melting point and low resistance is often used for the metal film 15a, in this case, a material made of the same kind of element, that is, molybdenum (Mo) is added. It is preferable to use tungsten nitride (W _x N _y ) contained as an element as the barrier film 15b. When ruthenium (Ru), which is resistant to oxidation, is used as the metal film 15a, it is selected from the group consisting of the same kind of element, that is, ruthenium (Ru) and silicon (Si), cobalt (Co), and nickel (Ni). It is preferable to use a material containing one kind of additional element as the barrier film 15b.

In these embodiments, the case where the information storage capacitive element 3 and the silicon substrate 1 are connected via the plug 13 is shown. However, the information storage capacitive element 3 and the silicon substrate 1 are connected to each other. May be in direct contact with.

Further, in the above embodiments, when the main constituent material of the capacitor lower electrode 15 is ruthenium (Ru), the capacitor lower electrode 15 is made of silicon (Si), cobalt (Co), nickel (Ni). When one kind of additional element selected from the group is contained, oxygen is less likely to permeate the lower capacitor electrode 15, and as a result, the effect of more easily suppressing the oxidation of the barrier film 14 is obtained. Further, in the above embodiments, the capacitor lower electrode 15 and the capacitor upper electrode 16 may be composed of a plurality of films.

Further, in the above embodiments, the barrier film containing the additional element can be formed by, for example, a two-source sputtering method, a one-source sputtering method, a chemical vapor deposition method or the like. If the film is formed by using, for example, the two-source sputtering method, the target of a single element can be used, so that the target can be easily obtained, and the ratio of the additional element can be easily changed. Also,
When the film is formed by the one-source sputtering method using the target containing the additive element, the sputtering time can be shortened and the ratio of the additive element can be kept constant. Furthermore, when a film is formed by a chemical vapor deposition method using a mixed gas, when a groove is formed in the insulating film and then the barrier film is formed by filling the groove,
Even if the groove width is narrow, the filling property is good.

Further, in order to contain the additional element more easily, it is preferable to form a film of the main constituent material, then form a film of the additional element, and perform heat treatment to raise the substrate temperature to 200 ° C. or higher. In this case, the film of the additional element is preferably removed by etching or the like after the heat treatment.

Further, in the above embodiments, the barrier film 1
When the main constituent material of 4 is titanium nitride (Ti _x N _y ),
It is effective to prevent the barrier film 14 from being oxidized by containing one kind of additional element selected from the group consisting of silicon (Si), cobalt (Co), nickel (Ni), and ruthenium (Ru). However, it is preferable to select silicon (Si) as the additive element in order to obtain the additional effect of improving the adhesion between the barrier film 14 and the plug 13. This is because the plug 13 often has silicon as a main constituent material, and when the same kind of silicon element is added to the barrier film 14, the bond with the plug 13 becomes strong. In order to prevent the electric resistance of the barrier film 14 from deteriorating, cobalt (Co) or nickel (Ni) having a low electric resistance is added as an additional element.
Is preferably selected. Further, in order to obtain the additional effect of improving the adhesion with the capacitor lower electrode 15, it is preferable to select ruthenium (Ru) as an additive element. This is because the capacitive lower electrode 15 often has ruthenium as a main constituent material, and when the same kind of ruthenium element is added to the barrier film 14, the coupling with the capacitive lower electrode 15 becomes strong.

Further, in the above embodiments, the barrier film 1
When the main constituent material of No. 4 is ruthenium (Ru), it is necessary to include one kind of additive element selected from the group consisting of silicon (Si), cobalt (Co), and nickel (Ni) in the barrier film 14 It has been described that it is effective in preventing the oxidation of silicon, but in order to obtain the additional effect of improving the adhesion between the barrier film 14 and the plug 13, silicon (S
It is preferable to select i). Further, in order to prevent the electric resistance of the barrier film 14 from deteriorating, it is preferable to select cobalt (Co) or nickel (Ni) as an additional element.

[0033]

According to the present invention, it is possible to provide a highly reliable semiconductor device, a semiconductor device having a high yield, a semiconductor device having a capacitive element structure which is unlikely to cause conduction failure, and an oxidation method. It is possible to realize at least one of the following: providing a semiconductor device having a gate structure that does not easily occur.

[Brief description of drawings]

FIG. 1 is a sectional view of a main part of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a diagram showing an example of a planar layout of a semiconductor device according to a first example of the present invention.

FIG. 3 is a diagram showing the addition concentration dependence of the diffusion coefficient in the low concentration region when titanium nitride according to the first embodiment of the present invention is used as the main constituent material of the barrier film.

FIG. 4 is a diagram showing the addition concentration dependence of the diffusion coefficient in the high concentration region when titanium nitride according to the first embodiment of the present invention is used as a main constituent material of a barrier film.

FIG. 5 is a diagram showing the addition concentration dependence of the diffusion coefficient in the low concentration region when tungsten nitride according to the first embodiment of the present invention is used as the main constituent material of the barrier film.

FIG. 6 is a diagram showing the addition concentration dependence of the diffusion coefficient in the high concentration region when using tungsten nitride according to the first embodiment of the present invention as the main constituent material of the barrier film.

FIG. 7 is a diagram showing the addition concentration dependence of the diffusion coefficient in the low concentration region when ruthenium according to the first embodiment of the present invention is used as the main constituent material of the barrier film.

FIG. 8 is a diagram showing the addition concentration dependence of the diffusion coefficient in the high concentration region when ruthenium according to the first embodiment of the present invention is used as the main constituent material of the barrier film.

FIG. 9 is a sectional view of a main portion of a semiconductor device according to a second embodiment of the present invention.

FIG. 10 is a sectional view of a main portion of a semiconductor device according to a third embodiment of the present invention.

FIG. 11 is a sectional view of a main portion of a semiconductor device according to a fourth embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Silicon substrate, 2 ... Transistor, 3 ... Information storage capacitor element, 4 ... Element isolation film, 5 ... Gate electrode, 6 ... Gate insulating film, 7, 8 ... Diffusion layer, 9 ... Insulating film, 10 ... Plug, 11 ... Bit line, 12 ... Insulating film, 13 ... Plug, 1
4 ... Conductive film, 15 ... Capacitance lower electrode, 16 ... Capacitance insulating film, 17 ... Capacitance upper electrode, 18 ... Insulating film, 19 ... Conductive film, 20 ... Conductive film.

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor, Yuzuru Oji, 3 company, 6-16 Shinmachi, Ome-shi, Tokyo Hitachi, Ltd. Device Development Center (72) Inventor Yoshitaka Nakamura, 6-16 Shinmachi, Ome-shi, Tokyo 3 share companies in the address Hitachi Device Development Center (56) Reference JP 2000-40800 (JP, A) JP 11-354732 (JP, A) JP 10-289885 (JP, A) JP-A-11-186192 (JP, A) JP-A-10-223855 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 27/105 H01L 27/108 H01L 21/8242

Claims (6)

(57) [Claims] 1. A semiconductor substrate and titanium nitride as a main constituent material formed on one main surface side of the semiconductor substrate, and at least one additive element selected from the group consisting of silicon, cobalt, nickel and ruthenium. A conductive film containing, a first electrode formed in contact with the conductive film, a high dielectric constant or ferroelectric oxide film formed in contact with the first electrode, the oxide film A second electrode formed so as to be in contact with the main constituent material, and the content of the additive element with respect to the main constituent material is 0.0.
A semiconductor device that is 5 at.% Or more and 18 at.% Or less . 2. The semiconductor device according to claim 1, wherein the main constituent material of the first electrode is ruthenium or ruthenium oxide. 3. A silicon substrate and titanium nitride as a main constituent material formed on the one main surface side of the silicon substrate, and at least one additive element selected from the group consisting of silicon, cobalt, nickel and ruthenium. And a conductive film having a content of 0.05 at.% To 18 at.% With respect to the main constituent material, and ruthenium or ruthenium oxide as a main constituent material formed in contact with the conductive film. A first electrode, an oxide film formed on the side of the first electrode opposite to the side where the conductive film is located, and a side of the oxide film opposite to the side where the first electrode is located. A semiconductor device having a second electrode formed on the side . 4. A silicon substrate, and a main constituent material formed on one main surface side of the silicon substrate is tungsten nitride, containing molybdenum as an additive element, and the content thereof is 0 with respect to the main constituent material. .05a
t.% or more and 18 at.% or less, a first electrode whose main constituent material is ruthenium or ruthenium oxide, which is formed so as to be in contact with the conductive film, and which is formed so as to be in contact with the first electrode The main constituent material is barium strontium titanate or zirconate titanate.
A semiconductor device comprising: an oxide film of lead oxide; and a second electrode formed in contact with the oxide film. 5. A silicon substrate, and a main constituent material formed on one main surface side of the silicon substrate is ruthenium, which contains at least one additive element selected from the group consisting of silicon, cobalt, and nickel. , Its content is 0.05 at. With respect to the main constituent material.
% Or more and 18 at.% Or less, a first electrode whose main constituent material is ruthenium or ruthenium oxide, which is formed in contact with the conductive film, and a first electrode which is formed in contact with the first electrode Main constituent materials are barium strontium titanate or zirconate titanate
A semiconductor device comprising: an oxide film of lead oxide; and a second electrode formed in contact with the oxide film. 6. A silicon substrate, and a main constituent material formed on one main surface side of the silicon substrate is titanium nitride, and at least one additive element selected from the group consisting of silicon, cobalt, nickel, and ruthenium is added. And a conductive film having a content of 0.05 at.% Or more and 18 at.% Or less with respect to the main constituent material, and a main constituent material formed in contact with the conductive film is ruthenium, It contains at least one additive element selected from the group consisting of silicon, cobalt, and nickel, and its content is 0.05 at.% With respect to the main constituent material.
The first electrode is 18 at.% Or more and the main constituent material formed in contact with the first electrode is barium strontium titanate or zircon titanate.
A semiconductor device comprising: an oxide film of lead oxide; and a second electrode formed in contact with the oxide film.