JP3463692B2 - Manufacturing method of chip-shaped solid electrolytic capacitor - Google Patents
Manufacturing method of chip-shaped solid electrolytic capacitorInfo
- Publication number
- JP3463692B2 JP3463692B2 JP06618992A JP6618992A JP3463692B2 JP 3463692 B2 JP3463692 B2 JP 3463692B2 JP 06618992 A JP06618992 A JP 06618992A JP 6618992 A JP6618992 A JP 6618992A JP 3463692 B2 JP3463692 B2 JP 3463692B2
- Authority
- JP
- Japan
- Prior art keywords
- solid electrolytic
- electrolytic capacitor
- anode
- lead frame
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 title claims description 62
- 239000007787 solid Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 239000011888 foil Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KQNKJJBFUFKYFX-UHFFFAOYSA-N acetic acid;trihydrate Chemical compound O.O.O.CC(O)=O KQNKJJBFUFKYFX-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229940046892 lead acetate Drugs 0.000 description 2
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- -1 thallium ions Chemical class 0.000 description 2
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012452 mother liquor Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、コストが安く、漏れ電
流値が良好なチップ状固体電解コンデンサの製造方法に
関する。BACKGROUND OF THE INVENTION The present invention has a low cost and is capable of
The present invention relates to a method for manufacturing a chip solid electrolytic capacitor having a good flow value .
【０００２】[0002]
【従来の技術】従来のチップ状固体電解コンデンサは、
図３及び図４に示すように表面に誘電体酸化皮膜層２を
有するアルミニウム、タンタル、ニオブ等の弁作用金属
からなる平板状の陽極基体１の表面に陽極部となる一部
を除いて半導体層３及び導電体層４を順次積層した固体
電解コンデンサ素子５（以下、コンデンサ素子と称す
る）を形成し、次いでこのコンデンサ素子５をリードフ
レーム６に接続するが、リードフレーム６の２ヶ所の凸
部６ａ、６ｂを間隔をおいて対向させ、それぞれの凸部
６ａ、６ｂに前記コンデンサ素子５の陽極部７と導電体
層形成部８を載置している。2. Description of the Related Art A conventional chip-shaped solid electrolytic capacitor is
As shown in FIGS. 3 and 4, a semiconductor is formed on the surface of a flat plate-shaped anode substrate 1 made of a valve metal such as aluminum, tantalum, and niobium, which has a dielectric oxide film layer 2 on the surface except for a part of the anode portion. A solid electrolytic capacitor element 5 (hereinafter referred to as a capacitor element) in which the layer 3 and the conductor layer 4 are sequentially laminated is formed, and then the capacitor element 5 is connected to the lead frame 6, but the lead frame 6 has two convex portions. The portions 6a and 6b are opposed to each other with a space, and the anode portion 7 and the conductor layer forming portion 8 of the capacitor element 5 are placed on the respective convex portions 6a and 6b.
【０００３】そして前者は熔接９などで、後者は銀ペー
スト等の導電材１０でリードフレーム６の凸部６ａ、６
ｂに電気的、かつ機械的に接続した後、外装樹脂１１で
封止して、チップ状固体電解コンデンサ１２が構成され
ている。そして、この封口した固体電解コンデンサは所
定の容量、ｔａｎδ、漏れ電流等の電気性能を満たすも
のを製品としている。The former is a welding 9 or the like, and the latter is a conductive material 10 such as silver paste or the like, and the projections 6a, 6 of the lead frame 6 are formed.
After being electrically and mechanically connected to b, the chip-shaped solid electrolytic capacitor 12 is formed by sealing with the exterior resin 11. The sealed solid electrolytic capacitor is a product that satisfies a predetermined capacity, tan δ, leakage current, and other electrical performance.
【０００４】[0004]
【発明が解決しようとする課題】前述したコンデンサ素
子の導電体層形成部は、アルミニウム箔等の陽極基体の
表面に半導体層及び導電体層が積層されているため、陽
極部よりも厚みが厚くなっている。このため陽極部とリ
ードフレームの凸部を接続すると極端な時には、陽極基
体が曲がり、漏れ電流を悪化させている。The conductor layer forming portion of the capacitor element described above is thicker than the anode portion because the semiconductor layer and the conductor layer are laminated on the surface of the anode substrate such as aluminum foil. Has become. For this reason, when the anode part and the protrusion of the lead frame are connected, the anode substrate bends in an extreme case, and the leakage current is deteriorated.
【０００５】このような欠点を防ぐために、陽極部と電
導体層形成部の厚みの差だけリードフレームの凸部にあ
らかじめ段差を設けておき、前記した接続時の陽極基体
の湾曲を緩和することが考えられるが、陽極基体の形状
が変更される毎に高価な金型を製造してリードフレーム
を作製せねばならず生産上かつコスト上の問題があっ
た。従ってコストが安く、漏れ電流値が良好なチップ状
固体電解コンデンサの製造方法の開発が求められてい
た。 In order to prevent such a defect, a step is provided in advance on the convex portion of the lead frame by the difference in thickness between the anode portion and the conductor layer forming portion, so that the above-mentioned curvature of the anode substrate during connection is alleviated. However, each time the shape of the anode substrate is changed, an expensive mold must be manufactured to manufacture a lead frame, which is a problem in terms of production and cost. Therefore, the cost is low and the leakage current is good.
Development of manufacturing method of solid electrolytic capacitor is required
It was
【０００６】[0006]
【課題を解決するための手段】本発明は、前述した問題
点を解決するためになされたものであって、
［１］ 表面に誘電体酸化皮膜層を有する平板状の弁作
用金属からなる陽極基体、その端部を陽極部、この陽極
基体の残部の前記誘電体酸化皮膜層上に半導体層、その
上に導電体層を順に設けた固体電解コンデンサ素子を、
リードフレームに接続し、且つリードフレームの一部を
残して外装樹脂により封口されているチップ状固体電解
コンデンサの製造方法において、少なくとも弁作用金属
基体の陽極部に金属線を介してリードフレームの陽極側
に接続することを特徴とするチップ状固体電解コンデン
サの製造方法、
［２］ 表面に誘電体酸化皮膜層を有する平板状の弁作
用金属からなる陽極基体、その端部を陽極部、この陽極
基体の残部の前記誘電体酸化皮膜層上に半導体層、その
上に導電体層を順に設けた固体電解コンデンサ素子を、
リードフレームに接続し、且つリードフレームの一部を
残して外装樹脂により封口されているチップ状固体電解
コンデンサの製造方法において、前記弁作用金属基体の
陽極部に金属線を介して対向して配置されたリードフレ
ームの陽極側に接続し、リードフレームの陰極側に前記
導電体層を接続することを特徴とするチップ状固体電解
コンデンサの製造方法、
［３］ 弁作用金属が、アルミニウム、タンタル及びニ
オブの内の一つである上記［１］または［２］に記載の
チップ状固体電解コンデンサの製造方法、及び
［４］ 表面に誘電体酸化皮膜層を有する平板状の弁作
用金属がアルミニウムエッチング箔である上記［３］に
記載のチップ状固体電解コンデンサの製造方法、を開発
することにより上記の課題を解決した。The present invention has been made to solve the above-mentioned problems, and [1] an anode made of a flat valve metal having a dielectric oxide film layer on its surface. A solid electrolytic capacitor element in which a substrate, an end portion thereof is an anode portion, a semiconductor layer is provided on the dielectric oxide film layer of the remaining portion of the anode substrate, and a conductor layer is provided thereon in this order,
In a method of manufacturing a chip solid electrolytic capacitor , which is connected to a lead frame and is sealed with an exterior resin while leaving a part of the lead frame, at least an anode portion of a valve action metal substrate is provided with a lead wire anode through a metal wire. A method for producing a chip-shaped solid electrolytic capacitor, characterized in that it is connected to a side, [2] an anode substrate made of a flat valve metal having a dielectric oxide film layer on the surface, an end portion of which is an anode portion, and this anode is A solid electrolytic capacitor element in which a semiconductor layer is provided on the remaining dielectric oxide film layer of the substrate and a conductive layer is provided thereon in this order,
Connect to the lead frame and remove part of the lead frame
Chip-shaped solid electrolysis, which is sealed by exterior resin
In the method of manufacturing a capacitor, the valve action metal substrate
A lead frame that is placed opposite to the anode through a metal wire.
The cathode side of the lead frame.
A method for manufacturing a chip solid electrolytic capacitor, characterized by connecting a conductor layer , [3] The above [1] or [2], wherein the valve metal is one of aluminum, tantalum and niobium. [4] The method for manufacturing a chip solid electrolytic capacitor, and [4] The method for manufacturing a chip solid electrolytic capacitor according to [3], wherein the flat valve metal having a dielectric oxide film layer on the surface is an aluminum etching foil. The above problems have been solved by developing the.
【０００７】以下本発明の製造方法について詳細に説明
する。本発明において固体電解コンデンサの陽極として
用いられる弁作用を有する陽極基体としては、例えばア
ルミニウム、タンタル、及びこれらを基質とする合金
等、弁作用を有する金属がいずれも使用できる。そして
陽極基体の形状としては平板状のアルミニウムの箔や板
が挙げられる。 The manufacturing method of the present invention will be described in detail below. As the anode substrate having a valve action which is used as the anode of the solid electrolytic capacitor in the present invention, any metal having a valve action such as aluminum, tantalum, and an alloy having these as a substrate can be used. The shape of the anode substrate may be a flat aluminum foil or plate.
【０００８】陽極基体の表面に設ける誘電体酸化皮膜層
は、弁作用金属の表面部分に設けられた弁作用金属自体
の酸化物層であってもよく、或は弁作用金属箔の表面上
に設けられた他の誘電体酸化物の層であってもよいが、
特に弁作用金属自体の酸化物からなる層であることが望
ましい。The dielectric oxide film layer provided on the surface of the anode substrate may be an oxide layer of the valve action metal itself provided on the surface portion of the valve action metal, or on the surface of the valve action metal foil. It may be another dielectric oxide layer provided,
In particular, a layer made of an oxide of the valve metal itself is desirable.
【０００９】本発明では、表面に誘電体酸化皮膜層が形
成された平板状の陽極基体の端部の一区画に陽極部を設
けており、陽極部とした以外の残りの誘電体酸化皮膜層
上に半導体層を形成させているが、半導体層の種類には
特に制限は無く、従来公知の半導体層が使用できる。In the present invention, the anode part is provided in one section of the end portion of the flat plate-shaped anode substrate having the dielectric oxide film layer formed on the surface, and the remaining dielectric oxide film layer other than the anode part is provided. Although the semiconductor layer is formed on the semiconductor layer, the type of the semiconductor layer is not particularly limited, and a conventionally known semiconductor layer can be used.
【００１０】この中でとりわけ本願出願人の出願による
二酸化鉛又は二酸化鉛と硫酸鉛からなる半導体層（特開
昭６２−２５６４２３号公報、特開昭６３−５１６２１
号公報）が、作製した固体電解コンデンサの高周波性能
が良好なために好ましい。また、テトラチオテトラセン
とクロラニルの錯体を半導体層として形成させる方法
（特開昭６２−２９１２３号公報）、タリウムイオン及
び過硫酸イオンを含んだ反応母液から化学的に酸化第２
タリウムを半導体層として析出させる方法（特開昭６２
−３８７１５号公報）もその一例である。Among these, among others, lead dioxide or a semiconductor layer composed of lead dioxide and lead sulfate according to the application of the present applicant (Japanese Patent Laid-Open Nos. 62-256423 and 63-51621).
(Japanese Laid-Open Patent Publication No. 2000), the high frequency performance of the produced solid electrolytic capacitor is good. Also, a method of forming a complex of tetrathiotetracene and chloranil as a semiconductor layer (Japanese Patent Laid-Open No. 62-29123), a method of chemically oxidizing a reaction mother liquor containing thallium ions and persulfate ions
Method for depositing thallium as a semiconductor layer
-38715) is one such example.
【００１１】そしてこのような半導体層上には、例えば
カーボンペースト及び／又は銀ペースト等の従来公知の
導電ペーストを積層して導電体層を形成して導電体層形
成部を構成している。また本発明においては、前述した
陽極部と導電体層形成部との界面に絶縁性樹脂によって
はち巻き状に樹脂層部をあらかじめ形成しておくと、半
導体層を形成する時に半導体層の形成面積が一定しバラ
ツキの少ない容量のものが得られる。On such a semiconductor layer, a known conductive paste such as carbon paste and / or silver paste is laminated to form a conductive layer to form a conductive layer forming portion. Further, in the present invention, when the resin layer portion is formed in advance in a spiral shape with an insulating resin at the interface between the above-mentioned anode portion and the conductor layer forming portion, when the semiconductor layer is formed, the formation area of the semiconductor layer is formed. It is possible to obtain a capacitor having a constant value and a small variation.
【００１２】次にこのように導電体層まで形成されたコ
ンデンサ素子を一対の対向して配置されたリードフレー
ムに接続する方法を説明する。図１及び図２は、固体電
解コンデンサ素子５を導電材１０及び金属線１３で接合
した状態を示す断面図である。Next, a method of connecting the capacitor element having the conductor layer thus formed to a pair of lead frames arranged so as to face each other will be described. 1 and 2 are cross-sectional views showing a state in which the solid electrolytic capacitor element 5 is joined by the conductive material 10 and the metal wire 13.
【００１３】図１において、陽極基体１の表面に誘電体
酸化皮膜層２が形成されており、その上に半導体層３、
さらにその上に導電体層４が形成された固体電解コンデ
ンサ素子５をリードフレーム６の他方の凸部６ｂに載置
した後、導電体層形成部８の一部を導電材１０で接合さ
れ、また、リードフレーム６の一方の凸部６ａと陽極部
７が金属線１３で接合されている。図２においては固体
電解コンデンサ素子５の陽極部７の一部がリードフレー
ム６の一方の凸部６ａまで伸びていて、陽極部７と一方
の凸部６ａは金属線１３で接合されている。In FIG. 1, a dielectric oxide film layer 2 is formed on the surface of an anode substrate 1, on which a semiconductor layer 3,
Further, the solid electrolytic capacitor element 5 having the conductor layer 4 formed thereon is placed on the other convex portion 6b of the lead frame 6, and then a part of the conductor layer forming portion 8 is joined with the conductive material 10. Further, one convex portion 6 a of the lead frame 6 and the anode portion 7 are joined by the metal wire 13. In FIG. 2, a part of the anode part 7 of the solid electrolytic capacitor element 5 extends to one convex part 6 a of the lead frame 6, and the anode part 7 and one convex part 6 a are joined by a metal wire 13.
【００１４】前述した導電材１０としては、銀ペースト
等の公知の導電ペースト、クリーム半田等の溶融可能金
属が挙げられる。また金属線１３の材質としては鉄、ニ
ッケル、銅、アルミ及びこれらの合金等公知のものが挙
げられ、金属線には半田等のメッキが施されていてもよ
い。金属線の太さは、数ミクロンないし数ミリメートル
のものが適用され、リードフレームとの接続の容易さ、
固体電解コンデンサ素子の形状等によって選定される。
金属線の長さは通常、数ミリメートルであるが後述する
外装形状、固体電解コンデンサの大きさによって決定さ
れる。一般に金属線は、後述する外装時の応力を緩和す
るために、遊びを持たせてリードフレームと陽極部間を
接続することが好ましい。金属線とリードフレーム及び
陽極部とは、熔接、導電ペースト、半田等で接続され
る。Examples of the above-mentioned conductive material 10 include known conductive paste such as silver paste and meltable metal such as cream solder. Examples of the material of the metal wire 13 include known materials such as iron, nickel, copper, aluminum and alloys thereof, and the metal wire may be plated with solder or the like. The thickness of the metal wire is several microns to several millimeters, which is easy to connect with the lead frame.
It is selected according to the shape of the solid electrolytic capacitor element.
The length of the metal wire is usually several millimeters, but it is determined by the external shape and the size of the solid electrolytic capacitor described later. In general, it is preferable that the metal wire is provided with play to connect between the lead frame and the anode part in order to relieve the stress at the time of exterior packaging described later. The metal wire is connected to the lead frame and the anode portion by welding, conductive paste, solder or the like.
【００１５】図１及び図２では、金属線１３の本数を各
１本で示したが、接続を強固にするために複数本接続し
てもよい。また、金属線の接続順序として、あらかじめ
リードフレーム６の一方の凸部６ａに金属線１３が接続
したリードフレームを使用して、固体電解コンデンサ素
子５の載置時に、陽極部７と接続してもよい。或いは、
あらかじめ陽極部７に金属線１３を接続しておきリード
フレーム６に固体電解コンデンサ素子５が載置された時
に一方の凸部６ａと接続してもよい。後者の場合、陽極
部７に金属線１３を接続する時期は、半導体層３の形成
前後又は導電体層４の形成後でもよい。In FIG. 1 and FIG. 2, the number of the metal wires 13 is shown as one each, but a plurality of wires may be connected to strengthen the connection. In addition, as a connection order of the metal wires, a lead frame in which the metal wire 13 is connected to one convex portion 6a of the lead frame 6 in advance is used, and when the solid electrolytic capacitor element 5 is placed, it is connected to the anode portion 7. Good. Alternatively,
The metal wire 13 may be connected to the anode part 7 in advance, and when the solid electrolytic capacitor element 5 is placed on the lead frame 6, it may be connected to the one convex part 6a. In the latter case, the metal wire 13 may be connected to the anode portion 7 before or after the semiconductor layer 3 is formed or after the conductor layer 4 is formed.
【００１６】このようにしてリードフレームに接続され
た固体電解コンデンサ素子は、リードフレームの一部を
残して、エポキシ樹脂等の外装樹脂１１により、トラン
スファー成形機などで封止成形を行った後、リードフレ
ームの凸部をコンデンサ素子の近辺で切断してチップ状
の固体電解コンデンサとしている。The solid electrolytic capacitor element thus connected to the lead frame is sealed and molded by a transfer molding machine or the like with the exterior resin 11 such as epoxy resin, leaving a part of the lead frame. The projecting portion of the lead frame is cut near the capacitor element to form a chip-shaped solid electrolytic capacitor.
【００１７】[0017]
【作用】固体電解コンデンサ素子の陽極部とリードフレ
ームの凸部との接続を金属線で行っているので、陽極部
とリードフレームの凸部とに隙間があっても、接続時
に、陽極基体に応力がかからず、陽極基体の湾曲が起き
ないために、生産性よく、漏れ電流値の良好なチップ状
固体電解コンデンサを製造することができる。 Since the metal wire is used to connect the anode of the solid electrolytic capacitor element and the protrusion of the lead frame, even if there is a gap between the anode and the protrusion of the lead frame, the anode base is stress is not applied, occur curvature of the anode substrate
Since it does not exist, it has good productivity and has a good leakage current value.
A solid electrolytic capacitor can be manufactured.
【００１８】[0018]
【実施例】以下、実施例及び比較例を示して本発明をさ
らに詳しく説明する。EXAMPLES The present invention will be described in more detail with reference to Examples and Comparative Examples.
【００１９】実施例１
りん酸とりん酸アンモニウム水溶液中で化成処理して表
面に誘電体酸化皮膜層を形成した４５μＦ／ｃｍ2 のア
ルミニウムエッチング箔（以下、化成箔と称する。）の
小片４×３mmを用意した。この化成箔の端から１×３mm
の部分を陽極部とし、残り３×３mmの部分を酢酸鉛三水
和物２．４モル／ｌの水溶液と過硫酸アンモニウム４．
０モル／ｌ水溶液の混合液に浸漬し、６０℃で２０分放
置し、二酸化鉛と硫酸鉛からなる半導体層を形成した。Example 1 A small piece 4 × of a 45 μF / cm 2 aluminum etching foil (hereinafter referred to as chemical conversion foil) having a dielectric oxide film layer formed on its surface by chemical conversion treatment in an aqueous solution of phosphoric acid and ammonium phosphate. I prepared 3mm. 1 × 3 mm from the edge of this formed foil
Is used as an anode part, and the remaining 3 × 3 mm part is an aqueous solution of lead acetate trihydrate 2.4 mol / l and ammonium persulfate 4.
It was immersed in a mixed solution of 0 mol / l aqueous solution and left at 60 ° C. for 20 minutes to form a semiconductor layer made of lead dioxide and lead sulfate.
【００２０】このような操作を３回行った後、半導体層
上にカーボンペースト及び銀ペーストを順に積層して導
電体層を形成し、コンデンサ素子を作製した。一方、別
に用意したリードフレーム（材質４２アロイ、厚み０．
１mm、凸部の寸法：幅３mm、凸部の先端間隙１mm）を用
い、前記したコンデンサ素子を他方の凸部に載置し銀ペ
ーストで接続すると共に、陽極部の先端中央部と一方の
凸部の先端中央部に０．２５φ、長さ４mmのアルミ線を
渡し、両端をそれぞれ熔接で接続した。その後、エポキ
シ樹脂を用いてトランスファー成形して外形寸法７×４
×３mmのチップ状固体電解コンデンサを作製した。After performing such an operation three times, a carbon paste and a silver paste were sequentially laminated on the semiconductor layer to form a conductor layer, and a capacitor element was manufactured. On the other hand, separately prepared lead frame (material 42 alloy, thickness 0.
1 mm, size of convex part: width 3 mm, tip end gap of convex part 1 mm), the above-mentioned capacitor element is placed on the other convex part and connected with silver paste, and the central part of the tip of the anode part and one convex part An aluminum wire of 0.25φ and a length of 4 mm was passed to the center of the tip of each part, and both ends were connected by welding. After that, transfer molding is performed using epoxy resin and the external dimensions are 7 × 4.
A 3 mm chip-shaped solid electrolytic capacitor was produced.
【００２１】実施例２
実施例１と同様のコンデンサ素子を用い、リードフレー
ムの凸部の先端間隙が０．５mmである以外は実施例１と
同様のリードフレームの他方の凸部にコンデンサ素子の
導電体層形成部３×３mmを載置し、銀ペーストで接続す
ると共に、リードフレームの一方の凸部にはコンデンサ
素子の陽極部の０．５mmの部分がかかるように載置し、
陽極部の幅方向の中央の所の先端から、リードフレーム
の一方の凸部の先端から１．２mmの所で凸部の幅方向の
中央の位置にニッケル線（太さ０．３φ、長さ４mm）を
渡し熔接で接続した。その後、エポキシ樹脂を用いてト
ランスファー成形して外形寸法７×４×３mmのチップ状
固体電解コンデンサを作製した。Example 2 A capacitor element similar to that of Example 1 was used, and a capacitor element was provided on the other convex portion of the lead frame similar to that of Example 1 except that the tip gap of the convex portion of the lead frame was 0.5 mm. Place the conductor layer forming part 3 × 3 mm, connect with silver paste, and place it so that 0.5 mm of the anode part of the capacitor element is applied to one convex part of the lead frame,
Nickel wire (thickness 0.3φ, length) from the tip at the center in the width direction of the anode part to the center position in the width direction of the protrusion at 1.2 mm from the tip of one protrusion of the lead frame. 4 mm) and welded for connection. After that, transfer molding was performed using an epoxy resin to produce a chip-shaped solid electrolytic capacitor having external dimensions of 7 × 4 × 3 mm.
【００２２】実施例３、４
実施例１、２で半導体層を酢酸鉛三水和物２．０モル／
ｌ水溶液に化成箔を浸漬して、別に用意した白金陰極と
の間で電気化学的に形成した二酸化鉛にした以外は、実
施例１、２と同様にしてチップ状固体電解コンデンサを
作製した。Examples 3 and 4 In Examples 1 and 2, the semiconductor layer was made of lead acetate trihydrate 2.0 mol / mol.
A chip-shaped solid electrolytic capacitor was produced in the same manner as in Examples 1 and 2 except that the chemical conversion foil was dipped in an aqueous solution to prepare lead dioxide that was electrochemically formed between it and a separately prepared platinum cathode.
【００２３】比較例１
陽極部と陽極部側のリードフレームの接続を、金属線を
使用せずに、直接、陽極部とリードフレームの凸部とを
熔接で行った以外は実施例２と同様にしてチップ状固体
電解コンデンサを作製した。なお、陽極部の下面とリー
ドフレームの凸部の隙間は１mmであった。Comparative Example 1 Same as Example 2 except that the anode part and the lead frame on the anode part side were connected directly by welding the anode part and the protrusion of the lead frame without using a metal wire. Then, a chip solid electrolytic capacitor was produced. The gap between the lower surface of the anode part and the convex part of the lead frame was 1 mm.
【００２４】以上のようにして作製した直後の固体電解
コンデンサの性能を表１に示した。なお、各実施例又は
比較例は、全数値ｎ＝１００点の平均値である。Table 1 shows the performance of the solid electrolytic capacitor immediately after being manufactured as described above. In each example or comparative example, all numerical values n are average values of 100 points.
【００２５】[0025]
【表１】 [Table 1]
【００２６】[0026]
【発明の効果】本発明方法により製造されたチップ状固
体電解コンデンサは、固体電解コンデンサ素子の陽極部
とリードフレームとの接続を金属線を介して行っている
ため、陽極基体に応力がかからないため漏れ電流値が良
好な固体電解コンデンサを効率よく製造することができ
る。 In the chip-shaped solid electrolytic capacitor manufactured by the method of the present invention, since the anode part of the solid electrolytic capacitor element and the lead frame are connected via the metal wire, no stress is applied to the anode substrate. We can efficiently manufacture solid electrolytic capacitors with good leakage current values.
It
【図１】固体電解コンデンサ素子をリードフレームに載
置した状態を示す断面図である。FIG. 1 is a cross-sectional view showing a state in which a solid electrolytic capacitor element is placed on a lead frame.
【図２】固体電解コンデンサ素子をリードフレームに載
置した状態を示す他例の断面図である。FIG. 2 is a sectional view of another example showing a state in which a solid electrolytic capacitor element is mounted on a lead frame.
【図３】従来のチップ状固体電解コンデンサをリードフ
レームに載置した状態を示す平面図である。FIG. 3 is a plan view showing a state where a conventional chip-shaped solid electrolytic capacitor is mounted on a lead frame.
【図４】従来のチップ状固体電解コンデンサをリードフ
レームに載置した状態を示す断面図である。FIG. 4 is a cross-sectional view showing a state where a conventional chip solid electrolytic capacitor is mounted on a lead frame.
１ 陽極基体 ２ 誘電体酸化皮膜層 ３ 半導体層 ４ 導電体層 ５ 固体電解コンデンサ素子 ６ａ リードフレームの一方の凸部 ６ｂ リードフレームの他方の凸部 ７ 陽極部 ８ 導電体層形成部 ９ 熔接 １０ 導電材 １１ 外装樹脂 １２ チップ状固体電解コンデンサ １３ 金属線 1 Anode substrate 2 Dielectric oxide film layer 3 semiconductor layers 4 Conductor layer 5 Solid electrolytic capacitor element 6a One convex portion of the lead frame 6b The other convex portion of the lead frame 7 Anode part 8 Conductor layer forming part 9 Welding 10 Conductive material 11 Exterior resin 12 Chip solid electrolytic capacitors 13 metal wire
Claims (4)
の弁作用金属からなる陽極基体、その端部を陽極部、こ
の陽極基体の残部の前記誘電体酸化皮膜層上に半導体
層、その上に導電体層を順に設けた固体電解コンデンサ
素子を、リードフレームに接続し、且つリードフレーム
の一部を残して外装樹脂により封口されているチップ状
固体電解コンデンサの製造方法において、少なくとも弁
作用金属基体の陽極部に金属線を介してリードフレーム
の陽極側に接続することを特徴とするチップ状固体電解
コンデンサの製造方法。1. An anode substrate made of a flat valve metal having a dielectric oxide film layer on its surface, an end portion of which is an anode part, and a semiconductor layer on the remaining part of the anode substrate, which is a dielectric oxide film layer. In the method of manufacturing a chip-shaped solid electrolytic capacitor in which a solid electrolytic capacitor element having a conductive layer provided thereon is connected to a lead frame and is sealed with an exterior resin leaving a part of the lead frame, at least a valve action A method for manufacturing a chip solid electrolytic capacitor, which comprises connecting to an anode side of a lead frame via a metal wire to an anode part of a metal substrate.
の弁作用金属からなる陽極基体、その端部を陽極部、こ
の陽極基体の残部の前記誘電体酸化皮膜層上に半導体
層、その上に導電体層を順に設けた固体電解コンデンサ
素子を、リードフレームに接続し、且つリードフレーム
の一部を残して外装樹脂により封口されているチップ状
固体電解コンデンサの製造方法において、前記弁作用金
属基体の陽極部に金属線を介して対向して配置されたリ
ードフレームの陽極側に接続し、リードフレームの陰極
側に前記導電体層を接続することを特徴とするチップ状
固体電解コンデンサの製造方法。2. An anode substrate made of a flat valve metal having a dielectric oxide film layer on its surface, an end portion of which is an anode part, and a semiconductor layer on the remaining part of the anode substrate, which is a dielectric oxide film layer. A solid electrolytic capacitor element having a conductive layer provided thereon in order is connected to a lead frame and
A chip-like shape that is sealed with an exterior resin, leaving a part of
In the method of manufacturing a solid electrolytic capacitor, the valve metal
The metal substrate is placed opposite to the anode of the metal base via a metal wire.
Connected to the anode side of the lead frame and the cathode of the lead frame
A method for manufacturing a chip solid electrolytic capacitor, characterized in that the conductor layer is connected to the side .
及びニオブの内の一つである請求項１または２に記載の
チップ状固体電解コンデンサの製造方法。3. The method for producing a chip solid electrolytic capacitor according to claim 1, wherein the valve action metal is one of aluminum, tantalum and niobium.
の弁作用金属がアルミニウムエッチング箔である請求項
３に記載のチップ状固体電解コンデンサの製造方法。4. The method for producing a chip solid electrolytic capacitor according to claim 3, wherein the plate-shaped valve metal having a dielectric oxide film layer on the surface is an aluminum etching foil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06618992A JP3463692B2 (en) | 1992-03-24 | 1992-03-24 | Manufacturing method of chip-shaped solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06618992A JP3463692B2 (en) | 1992-03-24 | 1992-03-24 | Manufacturing method of chip-shaped solid electrolytic capacitor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003044172A Division JP3894316B2 (en) | 2003-02-21 | 2003-02-21 | Manufacturing method of chip-shaped solid electrolytic capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05275290A JPH05275290A (en) | 1993-10-22 |
| JP3463692B2 true JP3463692B2 (en) | 2003-11-05 |
Family
ID=13308654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06618992A Expired - Lifetime JP3463692B2 (en) | 1992-03-24 | 1992-03-24 | Manufacturing method of chip-shaped solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3463692B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001244146A (en) * | 2000-02-25 | 2001-09-07 | Rohm Co Ltd | Solid electrolytic capacitor |
| JP2001358037A (en) * | 2000-06-12 | 2001-12-26 | Rohm Co Ltd | Electronic parts |
| JP4060657B2 (en) | 2002-07-18 | 2008-03-12 | Ｎｅｃトーキン株式会社 | Solid electrolytic capacitor and manufacturing method thereof |
| JP2004087872A (en) | 2002-08-28 | 2004-03-18 | Nec Tokin Corp | Solid electrolytic capacitor |
| JP3869822B2 (en) | 2003-07-14 | 2007-01-17 | Ｎｅｃトーキン株式会社 | Surface mount thin capacitors |
| US8169774B2 (en) * | 2008-09-30 | 2012-05-01 | Sanyo Electric Co., Ltd. | Solid electrolytic capacitor and a method for manufacturing same |
| US9754730B2 (en) * | 2015-03-13 | 2017-09-05 | Avx Corporation | Low profile multi-anode assembly in cylindrical housing |
-
1992
- 1992-03-24 JP JP06618992A patent/JP3463692B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05275290A (en) | 1993-10-22 |
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