JP3443994B2 - Method for producing tubular body with film formed on inner peripheral surface and apparatus for producing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is applied to various glass pipes, thin pipes for passing cooling water of nuclear equipment, medical catheters, and other inner surfaces of pipes for the purpose of protecting the inner surface of the pipes. A method and apparatus for forming a film.

[0002]

2. Description of the Related Art Generally, a film is formed on the inner surface of a tube by vacuum deposition. An apparatus shown in FIG. 3 will be described as an example of an apparatus for performing such vacuum deposition. This apparatus has a vacuum container 10 in which a film formation target tube body S2 is installed supported by a holder (not shown). A linear or rod-shaped vapor deposition material 50 having a length substantially the same as that of the tubular body S2 is arranged in the tube body S2, and a DC power supply 80 is connected to both ends of the vapor deposition material 50. Further, an exhaust device 110 is connected to the container 10.

According to this device, the exhaust device 110 is operated to bring the inside of the container 10 to a predetermined vacuum degree, and a direct current power source 80 applies direct current power to both ends of the vapor deposition material 50.
As a result, the vapor deposition material 50 is heated and vacuum-deposited on the inner peripheral surface of the tubular body S2, and a desired film is formed on the inner peripheral surface of the tubular body S2.

[0004]

However, in the film formation using the above-mentioned vacuum vapor deposition apparatus, when the inner diameter of the tubular body S2 is small, the diameter of the vapor deposition material 50 must be correspondingly small. As the vapor deposition material evaporates, the vapor deposition material easily breaks in the middle. In this case, since film formation on the inner surface of the tube cannot be performed, the vapor deposition material must be replaced with a new vapor deposition material. At this time, the interior of the container 10 is temporarily returned to atmospheric pressure and a new vapor deposition material is installed, and then the container is again placed. 1
The inside of 0 must be set to a predetermined degree of vacuum, which is troublesome and the productivity is poor.

A plasma CVD method can be considered as a method of supplying a film forming raw material without breaking the vacuum. In this case, however, plasma cannot be generated in the tube and the film is formed on the peripheral surface of the tube. I can't do it. Moreover, even if plasma is generated outside the tube, it cannot be sent into the tube.
Therefore, the present invention is a method capable of uniformly or uniformly forming a film on the inner peripheral surface of a tube having a small inner diameter, and obtaining a tube having a film formed on the inner peripheral surface with high productivity. Another object is to provide a device.

[0006]

A method for manufacturing a tubular body having a film formed on the inner peripheral surface of the present invention for solving the above-mentioned problems is to install a rod-shaped electrode in a vacuum container, and to surround the rod-shaped electrode with a predetermined electrode from the electrode. A ring-shaped electrode is installed at intervals, a rod-shaped sputter target to which a voltage is applied is arranged on an extension line of the rod-shaped electrode, and a film is formed around the sputter target so as to be almost continuous with the ring-shaped electrode. With the tubular body arranged, the inside of the vacuum container was set to a predetermined film formation vacuum degree, a plasma source gas was introduced between the rod-shaped electrode and the ring-shaped electrode, and DC power was applied between the electrodes. The gas is turned into plasma and a magnetic field is applied, the generated plasma is sent into the tube by an electric field and a magnetic field, and a sputtering voltage is applied to the sputter target to sputter the sputter target. And performing film forming on the tube inside surface by.

Further, in the apparatus for manufacturing a tubular body having a film formed on the inner peripheral surface of the present invention for solving the above-mentioned problems, a vacuum container, a rod-shaped electrode installed in the container, and the electrode at a predetermined interval from the electrode. A ring-shaped electrode surrounding the circumference, a means for arranging and supporting a bar-shaped sputter target on an extension line of the bar-shaped electrode, and a film-forming target formed around the sputter target supported by the supporting means in a substantially continuous manner with the ring-shaped electrode. A holder for supporting the tubular body; a means for introducing a plasma source gas between the rod-shaped electrode and the ring-shaped electrode; a means for applying a direct current power for plasmaizing the gas between the electrodes; A means for applying a magnetic field to the plasma so as to send the plasma generated between the electrodes into the tubular body supported by the holder; and a means for applying a sputtering voltage to the sputtering target. Characterized by comprising.

In the method and apparatus of the present invention, the magnetic field applied acts together with the electric current resulting from the electric power applied between the rod-shaped electrode and the ring-shaped electrode to move the plasma spirally in the tube. It is a magnetic field having a directivity that causes an electromagnetic force to be sent (hereinafter referred to as "longitudinal magnetic field"). In the method and apparatus of the present invention, the length of the rod-shaped sputter target may be such that a film can be formed on a desired portion of the inner surface of the film forming tube. For example, when it is desired to form a film on the entire inner surface of the tube, the film forming tube is formed. It is considered that the length is almost the same as the length of.

The material of the sputter target is
Any material can be used as long as it can form a desired film on the inner surface of the tube to be deposited by sputtering, and examples thereof include simple substances of various metals, simple substances of non-metals, and compounds thereof. In the method and apparatus of the present invention, the sputtering voltage applied to the sputter target is usually a negative voltage when the sputter target is made of a conductive substance, and a high frequency voltage when the sputter target is made of an insulating substance. Can be considered. When the sputter target is made of an insulating material, an electrode can be provided inside the target and a high frequency voltage can be applied to the electrode.

When the sputter target is a conductive substance, the voltage applied to the sputter target may be the same as or different from the voltage applied between the rod-shaped electrode and the ring-shaped electrode. When the same voltage is applied, the means for applying electric power between the rod-shaped electrode and the ring-shaped electrode may also serve as the means for applying voltage to the sputter target. Therefore, as the sputtering target supporting means, for example, a means for placing and supporting the target by bringing it into contact with a rod-shaped electrode is conceivable. When it is desired or necessary to separately control the power for generating plasma and the voltage for sputtering, separate power applying means and voltage applying means may be adopted.

The plasma in the method and apparatus of the present invention
The source gas is helium (He) gas, neon (N)
e) gas, argon (Ar) gas, krypton (Kr)
Gas, inert gas such as xenon (Xe) gas and nitrogen (N
₂) Gas, ammonia (NH ₃) Gas, oxygen (O₂) Moth
1 or 2 of these can be mentioned.
The above can be used.

[0012]

According to the method and apparatus of the present invention, the plasma source gas is introduced between the rod-shaped electrode and the ring-shaped electrode provided at a predetermined interval so as to surround the electrode, and
DC power for plasma generation is applied between both electrodes, and the gas is turned into plasma. On the other hand, a longitudinal magnetic field is applied inside the ring-shaped electrode. The vertical magnetic field cooperates with the current generated by the applied electric field to rotate the plasma generated by the power application in a spiral shape in the direction of the film-forming tube arranged substantially in line with the ring-shaped electrode. The film is formed while being transferred, and is made to enter the inside of the film forming tube. Further, in the case where the rod-shaped sputter target disposed inside the film forming tube is made of a conductive material, a voltage having a polarity opposite to the electric charge of ions contributing to sputtering in the plasma (usually , Negative voltage), which attracts the ions toward the sputter target and continuously sputters the target. When the sputter target is made of an electrically insulating material, its surface tends to be charged by the ions in the plasma that have entered the film-forming tube, but a high-frequency voltage is applied to the electrodes and the like provided inside the sputter target. This suppresses the accumulation of surface charge and the ions sputter the target continuously. In any case, the sputtered particles are continuously and evenly or uniformly deposited on the peripheral surface of the tube body to form a film.

When an inert gas is used as the plasma source gas, a film made of the constituent atoms of the sputter target is formed on the inner surface of the tube, and when an active gas such as nitrogen gas, ammonia gas or oxygen gas is used, the inner surface of the tube is surrounded. A film made of nitride or oxide of the constituent atoms is formed on the surface.

[0014]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a view showing a schematic configuration of an example of a tubular body manufacturing apparatus of the present invention, with a part of which is cut away. This apparatus has a vacuum container 1, and has a hollow rod-shaped center electrode 2 inside the container 1 and an outer diameter slightly smaller than the inner diameter of the tubular body to be treated so as to surround it with a predetermined distance from the electrode 2. The ring-shaped electrode 3 having is installed. A ring-shaped insulator spacer 4a is fitted between the rear ends of the electrodes 2 and 3. These are supported by the container 1 by a supporting portion (not shown).

A solid rod-shaped sputter target 5 having a circular cross section is arranged so that a ring-shaped electric insulator 4b is sandwiched at the tip of the center electrode 2. The sputter target 5 has a diameter that is substantially the same as the outer diameter of the center electrode 2 and a length that is substantially the same as the length of the film formation tube. When the sputter target is made of an insulating material, a rod-shaped internal electrode 5a having substantially the same length as the target is provided inside. Further, a screw hole 51 is formed at the end of the sputter target 5 in contact with the insulator 4b, and the male screw 52a of the support rod 52 having a male screw 52a at the tip is fitted to the sputter target 5. Is cantilevered by a support rod 52. The support rod 52 is electrically insulated from the center electrode 2 by the insulator 4b, and
And the rear end portion of the support rod 52 is penetrated and supported by an electric insulator 4c provided so as to cover the rear end opening of the insulator 4a. The insulator 4c is a ring-shaped insulator 4
screwed bolts 4d into the plurality of screw holes 4e provided in a.
Is fixed to the insulator 4a by fitting. The supporting means for the sputter target 5 is not limited to this. For example, it is conceivable that the target end on the side opposite to the rod-shaped electrode 2 is detachably supported, or that both ends of the target are detachably supported.

A power supply unit 8 is provided for the sputter target 5 so that it can be connected to the target 5 or an electrode 5a therein. The power supply unit 8 is composed of a voltage variable DC power supply 8b and a high frequency power supply 8c, which are selectively connected via a changeover switch 8a and can apply a negative voltage. A plasma source gas gas supply unit 6 is connected to the hollow portion of the center electrode 2 by piping so that the plasma source gas can be blown out from a predetermined number of gas blowing holes 2a provided around the electrode 2 at equal intervals. There is. The gas supply unit 6 has one or more mass flow controllers 61.
, 612, ..., And valves 621, 622, ... Connected via gas sources 631, 63 of plasma source gas
2 ... is included.

A power supply unit 7 is connected to the electrodes 2 and 3. The power supply unit 7 is connected to the electrode 2 on the one hand and is connected to the electrode 3 via the charging switch 7h and the open / close switch 7g on the other hand, and the discharge start connected in parallel to each other in this circuit. Capacitor 7b, film formation speed control capacitor 7c and crowbar circuit switch 7d, discharge start switch 7e in series with capacitor 7b, and film formation speed control switch 7f in series with capacitor 7c. Instead of the power supply unit 7, a power supply circuit including a semiconductor switch such as an inverter may be used.

A solenoid 9 for applying a magnetic field, which is connected to a DC power source (not shown), is arranged on the outer circumference of the vacuum container 1 so that a magnetic field can be applied in the direction indicated by B in the figure.
Although the solenoid 9 is used here, a permanent magnet may be used instead of the solenoid 9. Further, an exhaust device 11 is connected to the container 1. A support holder 12 for the film forming tube S1 is provided in front of the electrode 3. Holder 12
Are held in the container 1 via members not shown.

According to this apparatus, a longitudinal magnetic field is applied inside the container 1 by the solenoid 9 in the direction indicated by B in the figure.
Initially, all the switches of the power supply unit 7 are opened, the tubular body S1 to be processed is loaded into the vacuum container 1, and is arranged so as to be supported by the holder 12 and substantially connected to the ring-shaped electrode 3, and then the sputter target. The power supply unit 8 is connected to 5 or its internal electrode 5a. However, the changeover switch 8 of the power supply unit 8
The opening a is open without being connected to either of the power supplies 8b and 8c. After that, the inside of the container 1 is set to a predetermined vacuum degree by the operation of the exhaust device 11.

Next, a plasma source gas is introduced from the gas supply unit 6 and blown out from the gas blowing hole 2a of the central electrode 2 between the electrodes 2 and 3, and a discharge start switch 7e and a film formation rate control switch 7f. Also, the switch 7h is closed and electric power is applied from the DC power supply 7a to charge the discharge starting capacitor 7b and the film forming speed control capacitor 7c. The charging is finished with the switches 7e, 7f,
It is done by opening 7h. Then, the switch 7g and the discharge start switch 7e are closed, and DC power is applied from the center electrode 2 to the ring electrode 3 by the discharge start capacitor 7b, so that the introduced plasma source gas is turned into plasma. Subsequent plasma retention is
With the switch 7g kept closed, the switch 7e is opened, the film formation speed control switch 7f is closed, and power is applied by the film formation speed control capacitor 7c. When the plasma discharge is stabilized, the switch 7g is opened and the clover circuit switch 7d is closed. After that, the connection of the capacitor 7c by closing the switches 7g and 7f and the closing of the crowbar switch 7d are alternately repeated to continue the plasma generation of the plasma source gas.

When the target 5 is made of a conductive material, a negative voltage is applied to the sputter target 5 from the DC power source 8b through the changeover switch 8a. When the target 5 is made of an insulating material, the changeover switch 8a is turned on. A high-frequency voltage is applied to the internal electrode 5a from the high-frequency power source 8c. On the other hand, as indicated by J in the figure, the electric field radially applied from the center electrode 2 to the ring-shaped electrode 3 and the upper half and the lower half inside the ring-shaped electrode are opposite as shown by B in the figure. Due to the action of the magnetic field applied in the direction, an electromagnetic force is generated toward the processed tube body S1. Due to this electromagnetic force, the generated plasma spirally enters the tube body S1 as shown in the figure.

Further, when the sputter target 5 is made of a conductive material, the ions in the plasma that have entered the inside of the tubular body S1 are attracted to the target 5 to which a negative voltage is applied, and the target 5 is continuously sputtered. When the target 5 is made of an electrically insulating material, the accumulation of charges on the surface of the target 5 due to the ions in the plasma is suppressed by the application of the high frequency voltage to the internal electrode 5a, and the ions are continuously applied to the target 5. Sputter. In any case, the sputtered particles are continuously or uniformly deposited on the inner peripheral surface of the tubular body S1 to form a film.

When an inert gas is used as the plasma source gas, a film made of the constituent atoms of the target 5 is formed on the inner peripheral surface of the film forming tube S1, and an active gas such as nitrogen gas, ammonia gas, oxygen gas is used. At times, a film made of a nitride, an oxide, or the like of the target constituent atoms is formed on the inner surface of the tube. Although an electric field indicated by J in the drawing is formed from the center electrode 2 to the ring-shaped electrode 3 by applying power from the power source 7 here, an electric field may be formed from the ring-shaped electrode 3 to the center electrode 2. In this case, by reversing the directions of the magnetic fields indicated by B in the figure, which are applied to the inside of the ring-shaped electrode 3 by the solenoid 9, it is possible to similarly generate an electromagnetic force toward the target pipe body S1. it can.

FIG. 2 is a view showing a schematic structure of another example of the pipe body manufacturing apparatus of the present invention with a part of the notch omitted. This device is different from the device shown in FIG. 1 in that the sputter target 5 is brought into contact with the tip of the center electrode 2 without the interposition of the electrical insulator 4b, and the power supply section 8 is not provided. Further, the connection of the power supply unit 7 to the electrodes 2 and 3 and the direction of application of the vertical magnetic field are changed. The other structure is similar to that of the apparatus of FIG. 1, and the same parts are designated by the same reference numerals.

According to this apparatus, the inside of the container 1 is indicated by B in the figure.
A vertical magnetic field is applied in the direction indicated by. Further, initially, after all the switches of the power supply unit 7 are opened and the tubular body S1 to be processed is carried into the vacuum container 1 and arranged so as to be supported by the holder 12 and substantially connected to the ring-shaped electrode 3. , Container 1
The inside is set to a predetermined vacuum degree by the operation of the exhaust device 11. Then, a plasma source gas is introduced between the center electrode 2 and the ring-shaped electrode 3 in the same manner as in the device of FIG. 1, and a DC power is applied from the ring-shaped electrode 3 to the center electrode 2 by a power supply unit 7 to generate the gas. The plasma is continuously generated. When the sputter target 5 is made of a conductive substance, a voltage is applied to the target 5 by the power supply unit 7 so that the target 5 has the same potential as the center electrode 2. When the sputter target 5 is made of an insulating material, a rod-shaped internal electrode (not shown) having a length substantially the same as the target 5 is provided inside the target 5, and a high frequency voltage is separately applied to the electrode. . In this case, depending on the arrangement of the support electrodes 52 such that the internal electrodes come into contact with the support rods 52, the support rods 52 themselves may be electrically insulating, or the support rods 52 may be insulated from the electrodes 2. Can be set.

On the other hand, as indicated by J in the figure, an electric field applied from the ring-shaped electrode 3 toward the center electrode 2 and an upper half and a lower half inside the ring-shaped electrode as indicated by B in the figure. Due to the action of the magnetic field applied in the opposite direction, an electromagnetic force is generated toward the processed tube body S1. Due to this electromagnetic force, the generated plasma spirally enters the tube body S1 as shown in the figure.

Further, as in the case of the apparatus shown in FIG. 1, the ions in the plasma continuously sputter the target 5, and the sputtered particles are continuously and uniformly formed on the inner peripheral surface of the tubular body S1. To form a film. When the sputter target 5 is made of an insulating material, the electric field J and the magnetic field B having the same directionality as shown in the apparatus of FIG. 1 may be formed. Electromagnetic force is generated toward.

Next, a specific example of manufacturing a glass tube body having a film formed on its inner peripheral surface by the apparatus shown in FIG. 1 will be described. Example 1 Titanium (Ti) film forming glass tube size-20 mm diameter (19 mm inner diameter) x 1 m length Device size-Center electrode 2 6 mm diameter x discharge charge length 10 mm-Gas blowing hole 2a Diameter 0.5 mm, 4 Individual ・ Ring electrode 3 Diameter 18 mm × Discharge length 8 mm ・ Sputter target 5 Diameter 6 mm × Length 1.2 m Titanium (Ti) round bar film forming conditions ・ Deposition vacuum degree 5 mTorr ・ Discharge starting power 1 kV, 180 mA ・ Formation Film speed control power 1 kV, 10 mA ・ Sputtering target applied voltage DC voltage −600 V ・ Magnetic field strength 100 Gauss ・ Plasma source gas Argon (Ar) gas, 5 sccm Film formation result ・ Film formation time 2 sec ・ Film thickness (film formation speed) 1.6 μm (0.8 μm / sec) ・ Uniformity of film thickness ± 10% Example 2 1 silicon dioxide (SiO ₂ ) film formation coating Size of treated glass tube-Diameter 20 mm (internal diameter 19 mm) x length 1 m Device size-Center electrode 2 diameter 6 mm x discharge charge length 10 mm-Gas blowout hole 2a diameter 0.5 mm, 4 pieces-Ring electrode 3 diameter 18 mm x Discharge charge length 8 mm ・ Sputtering target 5 diameter 6 mm × length 1.2 m Silicon (Si) round bar film forming conditions ・ Deposition vacuum degree 5 mTorr ・ Discharge starting power 1 kV, 200 mA ・ Deposition rate control power 1 kV, 18 mA ・ Sputtering target applied voltage DC voltage -450 V, the magnetic field strength 100Gauss-plasma source gas oxygen gas (O _2), 5 sccm argon (Ar) gas, 5 sccm deposition results-forming time a time of 2 sec-thickness (film formation rate) 1.0 .mu.m ( 0.5 μm / sec) ・ Thickness uniformity ± 10% Example 3 Titanium nitride film forming glass tube Size-Diameter 20 mm (inner diameter 19 mm) x length 1 m Device size-Center electrode 2 diameter 6 mm x discharge charge length 10 mm-Gas blowout hole 2a diameter 0.5 mm, 4 pieces-Ring electrode 3 diameter 18 mm x discharge charge length 8mm ・ Sputter target 5 Diameter 6mm × length 1.2m Titanium (Ti) round bar film forming condition ・ Deposition vacuum degree 5mTorr ・ Discharge starting power 1kV, 150mA ・ Deposition rate control power 1kV, 8mA ・ Sputtering target applied voltage DC Voltage -400 V-Magnetic field strength 100 Gauss-Plasma source gas Nitrogen (N ₂ ) gas, 5 sccm Argon (Ar) gas, 5 sccm Film formation result-Film formation time 2 sec-Film thickness (film formation speed) 1 μm (0.5 μm / sec)・ Thickness uniformity ± 10% From this, the diameter is 20 mm (inner diameter 19 mm) and the length is 1
It can be seen that even a tubular body having a small inner diameter of about m or a length sufficiently longer than the inner diameter can be uniformly or uniformly deposited in a short time on its inner peripheral surface.

[0029]

According to the present invention, even a tubular body having a small inner diameter can be uniformly or uniformly formed on its inner peripheral surface, and a tubular body having a film formed on the inner peripheral surface with high productivity can be provided. A method and device that can be obtained can be provided.

[Brief description of drawings]

FIG. 1 is a view showing a schematic configuration of a manufacturing apparatus of a tubular body having a film formed on an inner peripheral surface thereof, which is an embodiment of the present invention, with a part of a cutout omitted.

FIG. 2 is a view showing a schematic configuration of a manufacturing apparatus of a tubular body having a film formed on an inner peripheral surface, which is another embodiment of the present invention, with a part of the notch omitted.

FIG. 3 is a diagram showing a schematic configuration of an example of a conventional apparatus for manufacturing a tubular body having a film formed on its inner peripheral surface.

[Explanation of symbols]

1 vacuum container 11 exhaust system 12 Support holder 2 Center electrode 2a Gas outlet 3 ring electrodes 4a, 4b, 4c electrical insulator 4d screwed bolt 4e screw hole 5 Sputter target 5a internal electrode 51 screw holes 52 Support rod 52a male screw 6 Plasma source gas supply unit 7 power supply 7a DC power supply 7b Discharge starting capacitor 7c Film forming speed control capacitor 7d Clover circuit switch 7e Switch for starting discharge 7f Film formation speed control switch 7h Charge switch 7g open / close switch 8 power supply 8a Changeover switch 8b Variable voltage DC power supply 8c high frequency power supply 9 solenoid

─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-3-260065 (JP, A) Jitsuko Sho 55-24133 (JP, Y1) (58) Fields investigated (Int.Cl. ⁷ , DB name) C23C 14/34

Claims (4)

(57) [Claims] 1. A rod-shaped electrode is provided in a vacuum container, a ring-shaped electrode is provided around the rod-shaped electrode at a predetermined distance from the electrode, and a rod-shaped electrode to which a voltage is applied is provided on an extension line of the rod-shaped electrode. A sputtering target is arranged, and a film forming tube is arranged around the sputter target so as to be substantially connected to the ring-shaped electrode. A plasma source gas is introduced between the ring-shaped electrodes, a DC power is applied between the electrodes to turn the gas into a plasma and a magnetic field is applied, and the generated plasma is applied to the tubular body by an electric field and a magnetic field. A tube having a film formed on the inner peripheral surface is characterized in that a film is formed on the inner surface of the tube by sending a voltage for sputtering to the sputter target and sputtering the sputter target. Manufacturing method. 2. A DC power applied between the rod-shaped electrode and the ring-shaped electrode is connected to the rod-shaped electrode on the one hand and a charging switch (7h) and an opening / closing switch (7) on the other hand.
g) in the circuit formed by the DC power supply (7a) connected to the ring-shaped electrode, the electrodes, the charging switch (7h), the open / close switch (7g) and the DC power supply (7a). A discharge starting capacitor (7b), a film formation speed controlling capacitor (7c) and a crowbar circuit switch (7d) connected in parallel, and a discharge starting switch (7b) connected in series to the discharge starting capacitor (7b). The inner peripheral surface according to claim 1, which is performed by a power supply unit (7) including 7e) and a film formation speed control switch (7f) connected in series to the film formation speed control capacitor (7c). A method of manufacturing a film-formed tube. 3. A vacuum container, a rod-shaped electrode installed in the container, a ring-shaped electrode surrounding the electrode at a predetermined distance from the electrode, and a rod-shaped sputter target on an extension line of the rod-shaped electrode. A means for supporting, a holder for supporting the film-forming target tube substantially continuously with the ring-shaped electrode around the sputter target supported by the supporting means, and a plasma source gas between the rod-shaped electrode and the ring-shaped electrode. Means for introducing a plasma, a means for applying a DC power for plasmaizing the gas between the electrodes, and a plasma generated between the electrodes so as to send the plasma into a tubular body supported by the holder. An apparatus for manufacturing a tubular body having a film formed on its inner peripheral surface, comprising: a means for applying a magnetic field to and a means for applying a sputtering voltage to the sputtering target. 4. A means for applying DC power between the rod-shaped electrode and the ring-shaped electrode is connected to the rod-shaped electrode on the one hand and a charging switch (7h) and open / close switch (7g) on the other hand. A DC power source (7a) connected to the ring-shaped electrode, both electrodes, and a charging switch (7
h), a discharge start capacitor (7b) and a film formation speed control capacitor (7) connected in parallel to each other in a circuit formed by the open / close switch (7g) and the DC power supply (7a).
c) and a clover circuit switch (7d), a discharge start switch (7e) connected in series to the discharge start capacitor (7b), and the film formation speed control capacitor (7).
A film formation speed control switch (7f) serially connected to c)
An apparatus for manufacturing a tubular body having a film formed on its inner peripheral surface according to claim 3, which is a power source section (7) including