CN114574807B - Plasma transmission device - Google Patents
Plasma transmission device Download PDFInfo
- Publication number
- CN114574807B CN114574807B CN202210194844.9A CN202210194844A CN114574807B CN 114574807 B CN114574807 B CN 114574807B CN 202210194844 A CN202210194844 A CN 202210194844A CN 114574807 B CN114574807 B CN 114574807B
- Authority
- CN
- China
- Prior art keywords
- power supply
- phase
- electrode plate
- transmission pipeline
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005540 biological transmission Effects 0.000 title claims abstract description 123
- 230000008859 change Effects 0.000 claims abstract description 12
- 239000012809 cooling fluid Substances 0.000 claims description 52
- 238000001816 cooling Methods 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 11
- 210000002381 plasma Anatomy 0.000 abstract description 101
- 239000002245 particle Substances 0.000 abstract description 16
- 230000005611 electricity Effects 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 24
- 230000005684 electric field Effects 0.000 description 14
- 230000009471 action Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005662 electromechanics Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
Abstract
The invention discloses a plasma transmission device, which comprises a transmission pipeline and a bias power supply device, wherein plasma enters the transmission pipeline from an inlet end of the transmission pipeline and is output from an outlet end of the transmission pipeline, and the transmission pipeline comprises at least two electrode plates which are distributed at intervals along the circumferential direction of the transmission pipeline; the bias power supply device is used for carrying out bias power supply on each electrode plate and switching the power supply state of each electrode plate so as to enable plasma in the transmission pipeline to change back and forth between outward movement and inward movement, thereby preventing negative particles in the plasma in the transmission pipeline from always moving outwards to strike the wall to enable the pipe wall to be negative electricity so as to damage the conductivity of the pipe wall, and further improving the stability of the transmission performance of the transmission pipeline. The plasmas of the transmission pipeline move back and forth between the shaft walls to enable the plasmas to collide with each other, so that the ionization efficiency of the plasmas is improved. In addition, each electrode plate is powered by the bias power supply device, so that the structure is simple, and the cost of the plasma transmission device can be effectively reduced.
Description
Technical Field
The invention relates to the technical field of vacuum coating, in particular to a plasma transmission device.
Background
The vacuum ion beam coating technology is widely applied to the fields of various industries, such as electromechanics, optics, aerospace and the like. The cathode vacuum arc source has the advantages of large extraction beam current, high ionization rate, capability of extracting a plurality of ion types and the like, and is widely applied to the field of material surface modification, wherein ion beam deposition and ion implantation are the two most important applications. The method has the characteristics of low process temperature, high sputtering speed, simple equipment, easy control, large coating area, strong adhesive force and the like, is very suitable for long-time batch production, and can be applied to high-end industries such as DLC (diamond like carbon) or semiconductor film preparation and the like.
The cathode vacuum arc source generates plasma by utilizing arc discharge between the cathode and the anode, and is further used for plasma deposition coating. However, during plasma deposition, the arc spot discharge on the cathode surface is intense, and a large amount of macro particles are generated at the same time as the high-density plasma is generated. Wherein macroparticles refer to macroparticles having diameters from about a few microns to about tens of microns. The cooperative deposition of macro-particles and plasmas often increases the surface roughness of the film, reduces the film base binding force, influences the acquisition of high-quality films, and becomes a key technical bottleneck in the industrial application of the cathode vacuum arc method.
At present, the generation of macro-large particles is reduced mainly by an electric field and a magnetic field, or the movement track of the plasma and the macro-large particles is changed by the electric field and the magnetic field, so that the plasma and the macro-large particles are separated, and the coordination deposition of the macro-large particles and the plasma is avoided. However, the simultaneous arrangement of an electric field and a magnetic field in a coating apparatus has the following drawbacks:
1. the bias electric field separates positive and negative ions, so that positive ions are bound in the middle of the pipeline, negative ions are attracted to the pipeline wall, and when a large amount of negative ions are adsorbed and deposited to the pipeline wall, the pipeline wall is negative electricity to attract positive ions to the pipeline wall, so that the transmission performance of the transmission pipeline is affected;
2. the coils are more, the energy consumption is high, and the stability of particles is influenced by high electromagnetic interference;
3. the required power supply is more, so that the cost is higher;
4. the arrangement of the multistage magnetic field and the electric field has better filtering effect on macro large particles, but the structure and the control mode are complex;
5. in the process of magnetic filtering macro-large particles, a bias power supply is connected to the bent pipe, the plasma beam bombards the bent pipe under the action of a magnetic field, the generated arc flow is released through the bias of the bent pipe, and the arc flow is often more than hundred amperes, so that the bias power supply can be caused to be self-protected and stopped, and the stable output of plasma is affected.
Disclosure of Invention
The invention aims to provide a plasma transmission device which can improve the stability of plasma transmission, reduce the cost and has a simple structure.
In order to achieve the above object, the present invention provides a plasma transfer apparatus comprising:
the plasma enters the transmission pipeline from the inlet end of the transmission pipeline and is output from the outlet end of the transmission pipeline, and the transmission pipeline comprises at least two electrode plates which are distributed at intervals along the circumferential direction of the transmission pipeline;
and the bias power supply device is used for carrying out bias power supply on each electrode plate and switching the power supply state of each electrode plate so as to enable the plasma of the transmission pipeline to change back and forth between outward movement and inward movement.
Optionally, the electrode plates are arranged on the inner wall of the transmission pipeline at intervals, and the transmission pipeline is insulated from the electrode plates; or (b)
The transmission pipeline is formed by alternately splicing a plurality of main body plates and a plurality of electrode plates, and the main body plates are insulated from the electrode plates.
Optionally, at least two electrode plates are rotationally symmetrical about the axis of the transmission duct.
Optionally, the bias power supply device comprises a bias power supply and a power supply controller, wherein the bias power supply is connected with the power supply controller, and the power supply controller switches the power supply state of each electrode plate.
Optionally, the device further comprises a conductive ring, the conductive ring is connected with the power supply controller, the conductive ring is sleeved on the transmission pipeline and is respectively connected with each electrode plate, and the bias power supply supplies power to a plurality of electrode plates through the power supply controller and the conductive ring.
Optionally, the plasma transmission device further comprises a potential neutralizer, one end of the potential neutralizer is connected with one end of the electrode plate far away from the conductive ring, and the other end of the potential neutralizer is grounded.
Optionally, the potential neutralizer comprises at least two CR circuits, each CR circuit comprises a capacitor and a resistor which are connected in series, and the at least two CR circuits are respectively connected with the at least two electrode plates.
Optionally, the device includes three rotationally symmetrical electrode plates, the power supply controller is a three-phase IC controller, the conductive ring is a three-phase conductive ring, the three electrode plates are respectively connected to three phases of the three-phase IC controller through the three-phase conductive ring, and the three-phase IC controller is connected with the bias power supply; the three-phase IC controller converts the bias power supply into three-phase power to supply power to the three electrode plates respectively.
Optionally, the device includes four rotationally symmetrical electrode plates, the power supply controller is a three-phase IC controller, the conductive ring is a three-phase conductive ring, a first phase of the three-phase IC controller is connected to two mutually symmetrical electrode plates through a first phase of the three-phase conductive ring, a second phase and a third phase of the three-phase IC controller are respectively connected to the other two electrode plates through a second phase and a third phase of the three-phase conductive ring, and the three-phase IC controller is connected to the bias power supply; the three-phase IC controller converts the bias power supply into three-phase power to supply power to the four electrode plates respectively.
Optionally, the cooling device further comprises a cooling fluid inlet, a cooling fluid channel and a cooling fluid outlet, wherein the cooling fluid inlet and the cooling fluid outlet are respectively arranged on the side wall of the transmission pipeline and close to the positions of the inlet end and the outlet end, the cooling fluid inlet is externally connected with an external cooling system, and cooling fluid of the external cooling system flows into the cooling fluid channel from the cooling fluid inlet and is output from the cooling fluid outlet so as to cool the electrode plate.
In the plasma transmission device, at least two electrode plates are distributed at intervals along the circumferential direction of the transmission pipeline, the bias power supply is configured to switch the power supply state of each electrode plate so as to enable plasma in the transmission pipeline to change back and forth between outward movement and inward movement, so that the plasma can move back and forth between a central axis of the pipe and the wall of the pipe of the transmission pipeline, negative particles in the plasma in the transmission pipeline always move outwards to strike the wall of the pipe to enable the wall of the pipe to be negative, positive ions are adsorbed and deposited to damage the conductivity of the wall of the pipe, and further stability of transmission performance of the transmission pipeline is improved. Meanwhile, as the plasmas of the transmission pipeline move back and forth between the shaft walls, the plasmas collide with each other, and the ionization efficiency of the plasmas is improved. In addition, each electrode plate is powered by the bias power supply device, so that the structure is simple, and the cost of the plasma transmission device can be effectively reduced.
Drawings
Fig. 1 is a block diagram of a plasma transmitting apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view of the outlet end of a transfer duct according to an embodiment of the invention.
Fig. 3 is a block diagram of a plasma transfer apparatus according to another embodiment of the present invention.
Fig. 4 is a schematic cross-sectional view of a port of a transfer tubing in accordance with another embodiment of the present invention.
Fig. 5 is a diagram showing a change in the shape of a plasma beam of a plasma transport apparatus according to another embodiment of the present invention.
Detailed Description
In order to explain the technical contents, the structural features and the effects of the present invention in detail, the following description will be made with reference to the embodiments and the accompanying drawings.
As shown in fig. 1 to 5, an embodiment of the present invention discloses a plasma transfer apparatus, which includes a transfer duct 10 and a bias power supply device 20, wherein plasma enters the transfer duct 10 from an inlet end of the transfer duct 10 and is output from an outlet end of the transfer duct 10, the transfer duct 10 includes at least two electrode plates 11 spaced apart along a circumferential direction thereof, and the bias power supply device 20 is used for bias power supply of each electrode plate 11 and switching a power supply state of each electrode plate 11 so as to change the plasma of the transfer duct 10 back and forth between an outward movement and an inward movement.
In the embodiment of the invention, at least two electrode plates 11 are distributed at intervals along the circumferential direction of the transmission pipeline 10, the bias power supply device 20 is configured to switch the power supply state of the electrode plates 11 so as to enable plasma of the transmission pipeline 10 to change back and forth between outward movement and inward movement, so that the plasma can move back and forth between the central axis of the pipe of the transmission pipeline 10 and the pipe wall, electrons and negative particles in the plasma in the transmission pipeline 10 always move outwards to strike the wall so as to enable the pipe wall to be negative, thereby causing positive ions to be adsorbed and deposited to damage the conductivity of the pipe wall, and further improving the stability of the transmission performance of the transmission pipeline 10. Meanwhile, since the plasmas of the transmission pipeline 10 move back and forth between the shaft walls, the plasmas collide with each other, and the ionization efficiency of the plasmas is improved. In addition, the bias power supply device 20 supplies power to each electrode plate 11, so that the structure is simple, and the cost of the plasma transmission device can be effectively reduced.
In the plasma transmission device according to the embodiment of the present invention, the "outward movement" refers to the movement of the plasma in a direction approaching the pipe wall of the transmission pipe 10, and the "inward movement" refers to the movement of the plasma in a direction approaching the pipe center axis of the transmission pipe 10; "negative particles" include negative ions and/or electrons.
It will be appreciated that each electrode plate 11 extends from the inlet end of the transfer duct 10 to the outlet end of the transfer duct 10 in order to enable the transfer of plasma throughout the transfer duct 10 to be varied back and forth between an outward movement and an inward movement depending on the state of the power supplied to the electrode plates 11.
In the embodiment of the present invention, the plurality of electrode plates 11 may be disposed on the inner wall of the transmission pipe 10 at intervals, and the transmission pipe 10 is insulated from the electrode plates 11, so that when the bias power supply device 20 switches the power supply state of each electrode plate 11, a voltage difference is formed between each electrode plate 11 and the transmission pipe 10 to form electric fields in different directions, thereby enabling the plasma to move inwards or outwards. Due to the insulation between the electrode plates 11 and the transmission duct 10, the transmission duct 10 can be prevented from being charged when the electrode plates 11 are charged, and the plasma of the transmission duct 10 cannot be changed back and forth between the outward movement and the inward movement by switching the power supply states of the plurality of electrode plates 11.
It is understood that in order to stably mount the electrode plate 11 on the inner wall of the transmission duct 10, the electrode plate 11 may be fastened to the inner wall of the transmission duct 10 by a fastener such as a screw or a clip.
The electrode plate 11 requires good electrical conductivity, and preferably, the electrode plate 11 may be a copper electrode plate. Of course, the electrode plate 11 may be made of other conductive materials, such as aluminum, stainless steel, etc.; the transmission duct 10 may be made of stainless steel to be provided to be insulated from the electrode plate 11.
As shown in fig. 1 and 3, the arrows in the plasma beam pattern in the transfer pipe 10 indicate the directional output.
As shown in fig. 2 and 4, the transmission duct 10 may be formed by alternately splicing a plurality of body plates 12 and a plurality of electrode plates 11, the body plates 12 being insulated from the electrode plates 11, and when the bias power supply device 20 switches the power supply state of each electrode plate 11, each electrode plate 11 forms electric fields in different directions, thereby causing the plasma to change back and forth between the inward movement and the outward movement. The electrode plates 11 and the main body plates 12 are alternately spliced to form the transmission pipeline 10, so that the cost of the transmission pipeline 10 can be reduced.
Since the electrode plate 11 is insulated from the main body plate 12, the main body plate 12 is prevented from being charged when the electrode plate 11 is charged, and thus the whole transmission pipeline 10 is charged, the potential of each electrode plate 11 cannot be changed when the bias power supply device 20 is switched, and the back and forth movement of plasma cannot be controlled.
It will be appreciated that, in order to ensure the tightness of the splice between the electrode plate 11 and the main body plate 12 to ensure the vacuum environment in the transmission pipeline 10, a sealing ring may be placed in the sealing groove at the contact surface, and then the electrode plate 11 and the main body plate 12 may be fixedly spliced together by using a fastener such as a screw or a clip.
The electrode plate 11 requires good electrical conductivity, and preferably, the electrode plate 11 may be a copper electrode plate. Of course, the electrode plate 11 may be made of other conductive materials, such as aluminum, stainless steel, etc.; the body plate 12 may be made of stainless steel, and is required to be insulated from the electrode plate 11.
As shown in fig. 2 and 4, at least two electrode plates 11 are rotationally symmetric about the axis of the transfer duct 10, facilitating the control of the inward and outward movement of the plasma by the bias power supply 20.
It should be noted that "rotationally symmetrical" does not only refer to that the circuit boards 11 are completely overlapped with the original state after rotating by a certain angle about the axis of the transmission pipe 10, but also includes that the circuit boards 11 are partially overlapped with the original state after rotating by a certain angle about the axis of the transmission pipe 10, for example, the central axes of the electrode boards 11 are equidistantly arranged along the axis of the transmission pipe 10, the sizes of the circuit boards 11 are different, and the central axes of the circuit boards 11 are completely overlapped with the central axes of the circuit boards 11 in the original state after rotating by a certain angle about the axis of the transmission pipe 10, but the circuit boards 11 are not completely overlapped with each other; for example, after the electrode plates 11 are rotated by a certain angle about the central axis of the transmission pipe 11, each circuit board 11 coincides with only a part of the circuit board 11 in the state before rotation.
In order to facilitate the switching of the power supply state of each electrode plate 11 by the bias power supply device 20, the bias power supply device 20 includes a bias power supply 21 and a power supply controller 22, the bias power supply 21 is connected to the power supply controller 22, and the power supply controller 22 switches the power supply state of each electrode plate 11.
Further, the plasma transmission device further comprises a conductive ring 30, the conductive ring 30 is connected with the power supply controller 22, the conductive ring 30 is sleeved on the transmission pipeline 10 and is respectively connected with each electrode plate 11, and the bias power supply 21 supplies power to the plurality of electrode plates 11 through the power supply controller 22 and the conductive ring 30, so that the connection between the power supply controller 22 and the electrode plates 11 is more stable and the safety can be improved.
As shown in fig. 1 and 3, the plasma transmission device further includes a potential neutralizer 40, one end of the potential neutralizer 40 is connected to one end of the electrode plate 11 far away from the conductive ring 30, and the other end is grounded, so that when the power supply controller 22 stops supplying power to any electrode plate 11, the electric charge of the electrode plate 11 can be rapidly released to the ground, thereby releasing the energy of the electrode plate 11 in a short time and improving the circuit stability of the transmission pipeline 10.
Specifically, the potential neutralizer 40 includes at least two CR circuits, each of which includes a capacitor C and a resistor R connected in series with each other, and the at least two CR circuits are respectively connected to the at least two electrode plates 11.
Specifically, each CR circuit is connected to one electrode plate 11, respectively; in each CR circuit, one end of a capacitor C is connected with an electrode plate 11, the other end of the capacitor C is connected with one end of a resistor R, the other end of the resistor R is grounded, when a power controller 22 supplies power to any electrode plate 11, current flows through the electrode plate 11 to the capacitor C, the capacitor C stores charges, and when the power controller 22 cuts off power to the electrode plate 11, the charges stored on the capacitor C are released to the resistor R and flow into a grounding end, so that quick release of energy of the electrode plate 11 is realized, and the stability of the transmission pipeline 10 is protected.
More specifically, the total capacitance C of the capacitor C is 10000 μF or more, the withstand voltage is 200V or more, and the resistance of the resistor R is 1000Ω or more. Of course, the capacitor C and the resistor R can be matched according to actual requirements.
Of course, the potential neutralizer 40 is not limited to the above specific example, and may be provided as other devices capable of holding the upper electrode plate 11 at a potential when the electrode plate 11 is supplied with electricity, and rapidly releasing the electric charges thereon when the electrode plate 11 is disconnected.
As shown in fig. 1 and 2, the plasma transmission device includes three rotationally symmetrical electrode plates 11, the power controller 22 is a three-phase IC controller, the conductive ring 30 is a three-phase conductive ring, the three electrode plates 11 are respectively connected to three phases of the three-phase IC controller through the three-phase conductive ring, and the three-phase IC controller is connected to the bias power supply 21; the three-phase IC controller converts the bias power supply 21 into three-phase power to supply power to the three electrode plates 11, respectively.
Specifically, as shown in fig. 2, three phases of the three-phase IC controller are an X-phase, a Y-phase and a Z-phase, respectively, three electrode plates 11 are distributed at intervals along the circumferential direction of the transmission pipeline 10, the three electrode plates 11 are connected to the X-phase, the Y-phase and the Z-phase of the three-phase IC controller through three-phase conductive rings, respectively, the three electrode plates 11 are a first electrode plate, a second electrode plate and a third electrode plate, respectively, the first electrode plate is connected with the X-phase, the second electrode plate is connected with the Y-phase, and the third electrode plate is connected with the Z-phase. The bias power supply 21 is pulse bias, the bias power supply 21 can control parameters such as waveforms, sizes, duty ratios and the like output by the X phase, the Y phase and the Z phase of the phase IC controller, two phases of the three-phase IC controller are simultaneously connected by controlling the output mode of the three-phase IC controller, and the corresponding two electrode plates 11 can be charged simultaneously, for example, when the two phases of the X phase and the Y phase are simultaneously connected, the first electrode plate and the second electrode plate are in positive potential, positive ions in plasma move towards the third electrode plate under the action of an electric field formed by the first electrode plate and the second electrode plate, negative ions in plasma move towards the first electrode plate and the second electrode plate, and the shape of a plasma beam is in an elliptic shape towards the third electrode plate; when the X phase and the Z phase are connected in the same way, the first electrode plate and the third electrode plate are at positive potential, under the action of a positive bias electric field formed by the first electrode plate and the third electrode plate, positive ions in plasma move towards the second electrode plate, negative ions in plasma move towards the first electrode plate and the third electrode plate, and the shape of a plasma beam is elliptic towards the second electrode plate; when the Y phase and the Z phase are connected in the same way, the second electrode plate and the third electrode plate are at positive potential, under the action of a positive bias electric field formed by the second electrode plate and the third electrode plate, positive ions in plasma move towards the first electrode plate, negative particles in plasma move towards the second electrode plate and the third electrode plate, and the shape of a plasma beam is an ellipsoid shape towards the first electrode plate; under the rapid phase change of the three-phase IC controller and the three-phase conducting ring, the plasma in the transmission pipeline 10 is rapidly changed back and forth between inward movement and outward movement, so that the plasma in the transmission pipeline 10 can form a plasma beam which is bound in the middle of the transmission pipeline 10, and further, a relatively stable quincuncial plasma beam (shown in fig. 2) can be formed at the outlet end of the transmission pipeline 10, and the deposition of the plasma is more stable.
As shown in fig. 3 to 5, the plasma transmission device includes four electrode plates 11, the power supply controller 22 is a three-phase IC controller, the conductive ring is a three-phase conductive ring, a first phase of the three-phase IC controller is connected to two electrode plates 11 symmetrical to each other through a first phase of the three-phase conductive ring, a second phase and a third phase of the three-phase IC controller are respectively connected to the other two electrode plates 11 through a second phase and a third phase of the three-phase conductive ring, and the three-phase IC controller is connected to the bias power supply 21; the three-phase IC controller converts the bias power supply 21 into three-phase power to supply power to the four electrode plates 11, respectively.
Specifically, as shown in fig. 4 and 5, three phases of the three-phase IC controller are an X phase, a Y phase and a Z phase, four electrode plates 11 are disposed at equal intervals along a circumferential direction of the transmission pipeline 10, the four electrode plates 11 are connected to three phases of the three-phase IC controller through three-phase conductive rings, the four electrode plates 11 are a first electrode plate, a second electrode plate, a third electrode plate and a fourth electrode plate, the first electrode plate and the third electrode plate are connected with the X phase, the second electrode plate is connected with the Y phase, and the fourth electrode plate is connected with the Z phase. The bias power supply 21 is pulse bias, the bias power supply 20 can control parameters such as waveforms, sizes, duty ratios and the like output by the X phase, the Y phase and the Z phase of the phase IC controller, two phases of the three-phase IC controller are simultaneously connected by controlling the output mode of the three-phase IC controller, and two electrode plates 11 or three electrode plates 11 can be charged simultaneously, for example, when the X phase and the Y phase are simultaneously connected, the first electrode plate, the second electrode plate and the third electrode plate are positive potentials, under the action of a positive bias electric field formed by the first electrode plate, the second electrode plate and the third electrode plate, positive ions in plasma are biased to move towards the fourth electrode plate, negative particles in plasma are biased to move towards the first electrode plate, the second electrode plate and the third electrode plate, and the shape of a plasma beam is elliptic shape biased towards the fourth electrode plate; when the X phase and the Z phase are connected in the same way, the first electrode plate, the third electrode plate and the fourth electrode plate are at positive potential, positive ions in the plasma move towards the second electrode plate under the action of a positive bias electric field formed by the first electrode plate, the third electrode plate and the fourth electrode plate, negative particles in the plasma move towards the first electrode plate, the third electrode plate and the fourth electrode plate, and the shape of a plasma beam is elliptic towards the second electrode plate; when the Y phase and the Z phase are connected in the same way, the second electrode plate and the third electrode plate are at positive potential, positive ions in the plasma move towards the first electrode plate and the third electrode plate under the action of a positive bias electric field formed by the second electrode plate and the fourth electrode plate, negative ions in the plasma move towards the second electrode plate and the fourth electrode plate, and the shape of the plasma beam is dumbbell-shaped towards the first electrode plate and the third electrode plate; under the rapid phase change of the three-phase IC controller and the three-phase conductive ring, the plasma in the transmission pipeline 10 is rapidly changed back and forth between inward movement and outward movement, so that the plasma in the transmission pipeline 10 can form a plasma beam which is bound in the middle of the transmission pipeline 10, and the outlet end of the transmission pipeline 10 can form a scanning type plasma beam which is biased towards the first electrode plate and the third electrode plate (as shown in figure 5), so that the deposition of the plasma is more uniform.
In the embodiment of the present invention, the switching of the power supply state of the power supply controller 22 to each electrode plate 11 is not limited to the above specific example, for example, the power supply controller 22 may supply and cut off power to each electrode plate 11 simultaneously, when the power supply controller 22 supplies power to each electrode plate 11, positive ions in the plasma move inwards and negative ions move outwards, and when the power supply controller 22 cuts off power to each electrode plate 11, the positive ions and the negative ions of the plasma attract each other, the positive ions move outwards and the negative ions move inwards, so that the plasma changes back and forth between the outwards movement and the inwards movement. For another example, the power supply controller 22 may also supply power to each electrode plate 11 in a switching manner, for example, only one electrode plate 11 is supplied with power at the same time, and each electrode plate 11 forms a positive electric field with different directions in the transmission pipeline 10 along with the power supply controller 22 supplying power to each electrode plate in a switching manner, so that the plasma is changed back and forth between inward movement and outward movement. Therefore, the embodiment of the present invention does not limit the manner in which the power supply controller 22 switches the power supply state of each electrode plate 11, as long as it is capable of making the plasma change back and forth between the outward movement and the inward movement.
Of course, in the embodiment of the present invention, the number of electrode plates 11 is not limited to the above specific example, nor is the shape of the plasma beam in the transmission duct 10 limited to the above specific example, and the plasma beam is formed into a certain shape according to the number of electrode plates 11 and the setting of the three-phase IC controller.
It will be appreciated that, in order to prevent the electrode plate 11 from overheating, the plasma transfer apparatus further includes a cooling fluid inlet 50, a cooling fluid channel 52 and a cooling fluid outlet 51, wherein the cooling fluid inlet 50 and the cooling fluid outlet 51 are respectively formed at positions close to the inlet end and the outlet end of the sidewall of the transfer pipe 10, the cooling fluid inlet 50 is externally connected with an external cooling system, and the cooling fluid of the external cooling system flows into the cooling fluid channel 52 from the cooling fluid inlet 50 and is output from the cooling fluid outlet 51 so as to cool the electrode plate 11.
Specifically, as shown in fig. 1 to 4, the transmission pipeline 10 is formed by alternately splicing the electrode plates 11 and the main body plate 12 in turn, a cooling fluid channel 52 is formed in the middle of each electrode plate 11 in a penetrating manner, a cooling fluid inlet 50 is formed in a position, close to the inlet end, of each electrode plate 11, a cooling fluid outlet 51 is formed in a position, close to the outlet end, of each electrode plate 11, and the external cooling system sends cooling fluid from the cooling fluid inlet 50 into the cooling fluid channel 52 in each electrode plate 11, so that cooling and heat dissipation of the electrode plates 11 are realized.
In other embodiments, an interlayer (not shown) may be formed on the outer side of the transmission channel 10, where the cooling fluid channel 52 is disposed, and the cooling fluid inlet 50 and the cooling fluid outlet 51 are disposed at positions near the inlet end and the outlet end of the transmission channel 10, respectively, and the external cooling system inputs the cooling fluid from the cooling fluid inlet 50 into the cooling fluid channel 52, so that the cooling and heat dissipation of the electrode plates 11 distributed on the transmission channel 10 can be performed, and the cooling and heat dissipation of the transmission channel 10 can also be performed.
As shown in fig. 1 and 3, plasma is generated by a cathode arc source 60 and a dc arc source 70 provided at an inlet end of the transmission pipe 10, a positive electrode of the dc arc source 70 is connected to the transmission pipe 10, a cathode of the dc arc source 70 is connected to the cathode arc source 60, and the cathode arc source 60 generates plasma when the dc arc source 70 operates. By connecting the positive pole of the dc arc power supply 70 to the transmission pipe 10 and the negative pole to the cathode arc source 60, arc striking and stable ablation are achieved to generate plasma when the dc arc power supply 70 is operated.
It should be noted that when the transmission pipe 10 is formed by alternately splicing the body plate 12 and the electrode plate 11, the positive electrode of the dc arc power source 70 is connected to the body plate 12.
The foregoing disclosure is illustrative of the present invention and is not to be construed as limiting the scope of the invention, but is for the convenience of those skilled in the art to understand and practice the invention, and therefore all of the equivalent variations as defined in the appended claims are intended to be encompassed by the present invention.
Claims (10)
1. A plasma transport apparatus, comprising:
the plasma enters the transmission pipeline from the inlet end of the transmission pipeline and is output from the outlet end of the transmission pipeline, the transmission pipeline comprises at least two electrode plates which are distributed at intervals along the circumferential direction of the transmission pipeline, and the at least two electrode plates are rotationally symmetrical about the axis of the transmission pipeline;
the bias power supply device is used for carrying out bias power supply on each electrode plate and switching the power supply state of each electrode plate so as to enable the plasma of the transmission pipeline to change back and forth between outward movement and inward movement;
the bias power supply device comprises a bias power supply and a power supply controller, wherein the bias power supply is connected with the power supply controller, and the power supply controller is used for switching the power supply state of each electrode plate;
the device also comprises a conducting ring, wherein the conducting ring is connected with the power supply controller, the conducting ring is sleeved on the transmission pipeline and is respectively connected with each electrode plate, and the bias power supply supplies power to a plurality of electrode plates through the power supply controller and the conducting ring;
the device comprises three rotationally symmetrical electrode plates, the power supply controller is a three-phase IC controller, the conducting ring is a three-phase conducting ring, the three electrode plates are respectively connected to three phases of the three-phase IC controller through the three-phase conducting ring, and the three-phase IC controller is connected with the bias power supply; the three-phase IC controller converts the bias power supply into three-phase power to supply power to the three electrode plates respectively.
2. The plasma transport apparatus according to claim 1, wherein,
the electrode plates are arranged on the inner wall of the transmission pipeline at intervals, and the transmission pipeline is insulated from the electrode plates; or (b)
The transmission pipeline is formed by alternately splicing a plurality of main body plates and a plurality of electrode plates, and the main body plates are insulated from the electrode plates.
3. The plasma transfer apparatus according to claim 1, further comprising a potential neutralizer having one end connected to an end of the electrode plate remote from the conductive ring and the other end grounded.
4. The plasma transport apparatus of claim 3, wherein the potential neutralizer comprises at least two CR circuits, each of the CR circuits comprising a capacitor and a resistor connected in series with each other, the at least two CR circuits being respectively connected to the at least two electrode plates.
5. The plasma transport apparatus of claim 1, further comprising a cooling fluid inlet, a cooling fluid channel, and a cooling fluid outlet, the cooling fluid inlet and the cooling fluid outlet being respectively disposed on a side wall of the transport conduit near the inlet end and the outlet end, the cooling fluid inlet being externally connected to an external cooling system, cooling fluid of the external cooling system flowing from the cooling fluid inlet into the cooling fluid channel and being output from the cooling fluid outlet to cool the electrode plate.
6. A plasma transport apparatus, comprising:
the plasma enters the transmission pipeline from the inlet end of the transmission pipeline and is output from the outlet end of the transmission pipeline, the transmission pipeline comprises at least two electrode plates which are distributed at intervals along the circumferential direction of the transmission pipeline, and the at least two electrode plates are rotationally symmetrical about the axis of the transmission pipeline;
the bias power supply device is used for carrying out bias power supply on each electrode plate and switching the power supply state of each electrode plate so as to enable the plasma of the transmission pipeline to change back and forth between outward movement and inward movement;
the bias power supply device comprises a bias power supply and a power supply controller, wherein the bias power supply is connected with the power supply controller, and the power supply controller is used for switching the power supply state of each electrode plate;
the device also comprises a conducting ring, wherein the conducting ring is connected with the power supply controller, the conducting ring is sleeved on the transmission pipeline and is respectively connected with each electrode plate, and the bias power supply supplies power to a plurality of electrode plates through the power supply controller and the conducting ring;
the device comprises four electrode plates which are rotationally symmetrical, the power supply controller is a three-phase IC controller, the conducting ring is a three-phase conducting ring, a first phase of the three-phase IC controller is connected to the two electrode plates which are mutually symmetrical through a first phase of the three-phase conducting ring, a second phase and a third phase of the three-phase IC controller are respectively connected to the other two electrode plates through a second phase and a third phase of the three-phase conducting ring, and the three-phase IC controller is connected with the bias power supply; the three-phase IC controller converts the bias power supply into three-phase power to supply power to the four electrode plates respectively;
the three phases of the three-phase IC controller are X phase, Y phase and Z phase respectively, the four electrode plates are arranged at equal intervals along the circumferential direction of the transmission pipeline, the four electrode plates are connected to the three phases of the three-phase IC controller respectively through the three-phase conductive rings, the four electrode plates are a first electrode plate, a second electrode plate, a third electrode plate and a fourth electrode plate respectively, the first electrode plate and the third electrode plate are connected with the X phase, the second electrode plate is connected with the Y phase, and the fourth electrode plate is connected with the Z phase.
7. The plasma transport apparatus according to claim 6, wherein,
the electrode plates are arranged on the inner wall of the transmission pipeline at intervals, and the transmission pipeline is insulated from the electrode plates; or (b)
The transmission pipeline is formed by alternately splicing a plurality of main body plates and a plurality of electrode plates, and the main body plates are insulated from the electrode plates.
8. The plasma transport apparatus of claim 6, further comprising a potential neutralizer having one end connected to an end of the electrode plate remote from the conductive ring and the other end grounded.
9. The plasma transport apparatus of claim 8, wherein the potential neutralizer comprises at least two CR circuits, each of the CR circuits comprising a capacitor and a resistor connected in series with each other, the at least two CR circuits being respectively connected to the at least two electrode plates.
10. The plasma transport apparatus of claim 6, further comprising a cooling fluid inlet, a cooling fluid channel, and a cooling fluid outlet, the cooling fluid inlet and the cooling fluid outlet being respectively disposed on a side wall of the transport conduit near the inlet end and the outlet end, the cooling fluid inlet being externally connected to an external cooling system, cooling fluid of the external cooling system flowing from the cooling fluid inlet into the cooling fluid channel and being output from the cooling fluid outlet to cool the electrode plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210194844.9A CN114574807B (en) | 2022-02-28 | 2022-02-28 | Plasma transmission device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210194844.9A CN114574807B (en) | 2022-02-28 | 2022-02-28 | Plasma transmission device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114574807A CN114574807A (en) | 2022-06-03 |
| CN114574807B true CN114574807B (en) | 2024-03-22 |
Family
ID=81777249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210194844.9A Active CN114574807B (en) | 2022-02-28 | 2022-02-28 | Plasma transmission device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114574807B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08176812A (en) * | 1994-12-26 | 1996-07-09 | Nissin Electric Co Ltd | Production of shell with film formed on its inner periphery and device therefor |
| US6026763A (en) * | 1997-03-31 | 2000-02-22 | Samsung Electronics Co., Ltd. | Thin-film deposition apparatus using cathodic arc discharge |
| CN106548914A (en) * | 2015-09-17 | 2017-03-29 | 中微半导体设备(上海)有限公司 | A kind of apparatus for processing plasma and its purging system and method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019011175A1 (en) * | 2017-07-12 | 2019-01-17 | 赵晓峰 | Apparatus and method for storing and transporting positive and negative ions |
| CN109718775A (en) * | 2018-12-18 | 2019-05-07 | 辽宁石油化工大学 | A kind of CuCo2O4The preparation method of nano spinel catalyst |
| CN111495371A (en) * | 2020-05-28 | 2020-08-07 | 太原理工大学 | Rapid preparation method of cobalt spinel catalyst |
-
2022
- 2022-02-28 CN CN202210194844.9A patent/CN114574807B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08176812A (en) * | 1994-12-26 | 1996-07-09 | Nissin Electric Co Ltd | Production of shell with film formed on its inner periphery and device therefor |
| US6026763A (en) * | 1997-03-31 | 2000-02-22 | Samsung Electronics Co., Ltd. | Thin-film deposition apparatus using cathodic arc discharge |
| CN106548914A (en) * | 2015-09-17 | 2017-03-29 | 中微半导体设备(上海)有限公司 | A kind of apparatus for processing plasma and its purging system and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114574807A (en) | 2022-06-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1038045B1 (en) | A method for magnetically enhanced sputtering | |
| EP2553137B1 (en) | Rotating magnetron sputtering cathode apparatus and method of depositing material with the same | |
| KR100569044B1 (en) | Cathodic arc vapor deposition apparatus(annular cathode) | |
| CN101088139B (en) | Electrically enhancing the confinement of plasma | |
| JP2000331993A (en) | Plasma processing device | |
| TWI287048B (en) | Equipment for cathode-sputtering | |
| US20100025372A1 (en) | Plasma processing method and apparatus | |
| EP0837490A2 (en) | A method to eliminate coil sputtering in an inductively coupled plasma (ICP) source | |
| EP2157205A1 (en) | A high-power pulsed magnetron sputtering process as well as a high-power electrical energy source | |
| WO2011142957A2 (en) | Inductive plasma source with metallic shower head using b-field concentrator | |
| KR20020081156A (en) | Magnetron plasma etching apparatus | |
| KR19990024032A (en) | Cathode arc deposition equipment | |
| US8377269B2 (en) | Sputtering apparatus | |
| JP5232190B2 (en) | Source for vacuum processing process | |
| CN114574807B (en) | Plasma transmission device | |
| CN100379893C (en) | Matching box, vacuum device using the same and vacuum processing method | |
| CN103339721B (en) | Triboelectric charge controls electrostatic clamp | |
| CN109082635A (en) | A kind of large area pulse magnetic filter | |
| CN109295426A (en) | A kind of ultra-wide and uniform Magnetic filter system and cylinder electric arc target and vacuum equipment | |
| US20160333463A1 (en) | Cylindrical Rotating Magnetron Sputtering Cathode Device and Method of Depositing Material Using Radio Frequency Emissions | |
| JP4533499B2 (en) | Magnetic neutral wire discharge sputtering equipment | |
| JPH0321629B2 (en) | ||
| CN112359330A (en) | Ion coating device with scanning coil | |
| CN102102178A (en) | Tubular cathode controlled arc plasma evaporation and ionization source | |
| CN115323335B (en) | Magnetron sputtering system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |