WO2008054039A1 - Atmospheric pressure plasma system - Google Patents
Atmospheric pressure plasma system Download PDFInfo
- Publication number
- WO2008054039A1 WO2008054039A1 PCT/KR2006/005459 KR2006005459W WO2008054039A1 WO 2008054039 A1 WO2008054039 A1 WO 2008054039A1 KR 2006005459 W KR2006005459 W KR 2006005459W WO 2008054039 A1 WO2008054039 A1 WO 2008054039A1
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- Prior art keywords
- electrodes
- electrode
- plasma
- magnetic field
- atmospheric pressure
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 238000004381 surface treatment Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
Definitions
- the present invention relates to a plasma generation system, more particularly to an atmospheric pressure plasma system.
- the plasma is generated by the plasma generation system and is utilized in the photolithographic process, one of the semiconductor manufacturing processes for the manufacture of liquid crystal displays or flat panel displays, to remove the photoresist used for patterning metallic or semiconductor material by ashing, to etch the thin film made of organic or semiconductor material or to remove organic materials from the surface.
- the plasma generation system may generate plasma under atmospheric pressure or in vacuum. Since the vacuum plasma generation system is restricted with regard to the equipments and place for attaining vacuum, the atmospheric pressure plasma system is preferred recently.
- FIG. 1 schematically illustrates the conventional atmospheric pressure plasma system.
- the conventional atmospheric pressure plasma system (10) comprises a first electrode (1) and a second electrode (2) which oppose each other with a spacing.
- a grounding plate (7) Below the first and second electrodes (1, 2) is equipped a grounding plate (7).
- the first and second electrodes (1, 2) are connected to a high voltage power supply (3).
- a gas storage tank (4) Above the first and second electrodes (1, 2) is equipped a gas storage tank (4) which supplies activated gas to the space between the first and second electrodes (1, 2).
- the conventional atmospheric pressure plasma system (10) is problematic in that, when the plasma generated under atmospheric pressure is applied to the substrate (6), the electrons or ions emerging from the plasma are not properly focused and stably transmitted to the surface of the substrate (6), thereby resulting in incomplete surface treatment of the substrate (6).
- the conventional atmospheric pressure plasma system employs multiple plasma electrodes for focusing the electrons or ions, which requires larger space and increased cost for installation.
- the present invention has been made to solve the aforesaid problem.
- An object of the present invention is to provide an atmospheric pressure plasma system capable of focusing the electrons and ions under atmospheric pressure and, thereby, improving the efficiency of substrate treatment using plasma.
- the atmospheric pressure plasma system of the present invention enables focusing of electrons or ions of plasma on a substrate using a magnetic field and, thus, improves the efficiency of substrate surface treatment.
- FIG. 1 is schematically illustrates the conventional atmospheric pressure plasma system
- FIG. 2 schematically illustrates the atmospheric pressure plasma system according to an embodiment of the present invention
- FIG. 3 illustrates the magnified cross-section of the magnetic field generating means of Fig. 2;
- FIG. 4 illustrates the generation of magnetic field depending on the construction and arrangement in Fig. 3;
- FIG. 7 and 8 illustrate the supply of power to the connecting plate of Fig. 3.
- the present invention provides a plasma generation system comprising: an electrode system equipped with a first electrode, a second electrode which opposes the first electrode with a predetermined spacing and a grounding plate which is grounded below the first and second electrodes with a predetermined spacing; a gas storage tank which supplies activated gas between the first and second electrodes; and a power supply which supplies high voltage to the first and second electrodes to generate plasma between the first and second electrodes and the grounding plate, so that a substrate can be surface-treated by the plasma as it is moved between the first and second electrodes and the grounding plate.
- a magnetic field generating means which generates a magnetic field to focus electrons and ions resulting from the plasma gener ated by the power supply.
- the magnetic field generating means comprises a plurality of permanent magnets which are arranged with a predetermined spacing and with alternating polarities, a connecting plate which connects the lower part of the permanent magnets and a case which encloses the permanent magnets and the connecting plate, so that the magnetic field generated by the permanent magnets is not affected from the external effect.
- the connecting plate is made of magnetic substance.
- an AC power source or a DC power source is selectively connected to the connecting plate in order to increase the magnetic field generated by the permanent magnets.
- the case is made of non-magnetic substance.
- FIG. 2 schematically illustrates the atmospheric pressure plasma system according to an embodiment of the present invention.
- the atmospheric pressure plasma system (100) in accordance with an embodiment of the present invention comprises: an electrode system (320) equipped with a first electrode (310), a second electrode (320) which opposes the first electrode (310) with a predetermined spacing and a grounding plate (330) which is grounded below the first and second electrodes (310, 320) with a predetermined spacing; a gas storage tank (400) which supplies activated gas between the first electrode (310) and the second electrode (320); and a power supply (500) which supplies high voltage to the first and second electrodes.
- an electrode system (320) equipped with a first electrode (310), a second electrode (320) which opposes the first electrode (310) with a predetermined spacing and a grounding plate (330) which is grounded below the first and second electrodes (310, 320) with a predetermined spacing
- a gas storage tank (400) which supplies activated gas between the first electrode (310) and the second electrode (320)
- a power supply (500) which supplies high voltage to the first and second electrodes.
- a magnetic field generating means (600) which generates a magnetic field in the plasma generated by the high voltage applied from the power supply (500) and focuses electrons or ions of the plasma toward the surface of the substrate (200).
- the magnetic field generating means (600) comprises a plurality of permanent magnets (610) which are arranged with a predetermined spacing and with alternating polarities and a connecting plate (620) which connects the lower part of each of the permanent magnets (610).
- FIG. 3 Three permanent magnets (610) are shown in Fig. 3, but more permanent magnets may be aligned.
- the strength of the magnetic field may be controlled to determine the linearity, rotational direction and rotational speed of the electrons and ions inside the plasma.
- the connecting plate (620) is made of magnetic substance, so that a stronger magnetic field can be generated from the magnetization as the lower part of the permanent magnets (610) is connected.
- the connecting plate (620) is made of metallic substance which is readily magnetized by the permanent magnets (610).
- the connecting plate (620) may be connected to an
- the connecting plate (620) When the connecting plate (620) is connected to an AC power source (700) or a DC power source (800), the permanent magnets (610) and the connecting plate (620) become electromagnets, resulting in the strength of the magnetic field depending on the strength of the AC or DC power.
- the magnetic field generating means (600) also comprises a case (630) which encloses the permanent magnets (610) and the connecting plate (620) and protects the magnetic field generated by the permanent magnets (610) from external effect.
- the case (630) is preferably made of non-magnetic substance in order to prevent the magnetic field generated by the permanent magnets (610) from being influenced by external effect.
- the case (630) is made of copper-based alloy, ceramic material or polymer resin.
- the atmospheric pressure plasma system (100) performs surface treatment of a substrate (200) as follows. First, activated gas is supplied from the gas storage tank (400) to between the first electrode (310) and the second electrode (320) of the electrode system (300), while applying high voltage from the power supply (500) to the first and second electrodes (310, 320) of the electrode system (300).
- the substrate (200) is moved between the first and second electrodes (310, 320) of the electrode system (300) and the grounding plate (330).
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
Abstract
The present invention provides a plasma generation system comprising: an electrode system equipped with a first electrode, a second electrode which opposes the first electrode with a predetermined spacing and a grounding plate which is grounded below the first and second electrodes with a predetermined spacing; a gas storage tank which supplies activated gas between the first and second electrodes; and a power supply which supplies high voltage to the first and second electrodes to generate plasma between the first and second electrodes and the grounding plate, so that a substrate can be surface-treated by the plasma as it is moved between the first and second electrodes and the grounding plate. Below the grounding plate of the electrode system is equipped a magnetic field generating means which generates a magnetic field to focus electrons and ions resulting from the plasma generated by the power supply.
Description
Description ATMOSPHERIC PRESSURE PLASMA SYSTEM
Technical Field
[1] The present invention relates to a plasma generation system, more particularly to an atmospheric pressure plasma system. Background Art
[2] In general, when a gas is ionized by electric voltage, heat, etc., the number density of electrons and ions increases significantly. The resulting ionized gas is called the plasma.
[3] The plasma is generated by the plasma generation system and is utilized in the photolithographic process, one of the semiconductor manufacturing processes for the manufacture of liquid crystal displays or flat panel displays, to remove the photoresist used for patterning metallic or semiconductor material by ashing, to etch the thin film made of organic or semiconductor material or to remove organic materials from the surface.
[4] The plasma generation system may generate plasma under atmospheric pressure or in vacuum. Since the vacuum plasma generation system is restricted with regard to the equipments and place for attaining vacuum, the atmospheric pressure plasma system is preferred recently.
[5] Fig. 1 schematically illustrates the conventional atmospheric pressure plasma system.
[6] As seen in the figure, the conventional atmospheric pressure plasma system (10) comprises a first electrode (1) and a second electrode (2) which oppose each other with a spacing. Below the first and second electrodes (1, 2) is equipped a grounding plate (7). The first and second electrodes (1, 2) are connected to a high voltage power supply (3). Above the first and second electrodes (1, 2) is equipped a gas storage tank (4) which supplies activated gas to the space between the first and second electrodes (1, 2).
[7] Accordingly, when high voltage is supplied between the first and second electrodes
(1, 2) as the substrate (6) to be surface-treated moves between the first and second electrodes (1, 2) and the grounding plate (7), plasma is generated between the first and second electrodes (1, 2) and the grounding plate (7) from the activated gas and the resultant plasma treats the surface of the substrate. Disclosure of Invention Technical Problem
[8] However, the conventional atmospheric pressure plasma system (10) is problematic in that, when the plasma generated under atmospheric pressure is applied to the
substrate (6), the electrons or ions emerging from the plasma are not properly focused and stably transmitted to the surface of the substrate (6), thereby resulting in incomplete surface treatment of the substrate (6). [9] Thus, the conventional atmospheric pressure plasma system employs multiple plasma electrodes for focusing the electrons or ions, which requires larger space and increased cost for installation.
Technical Solution
[10] The present invention has been made to solve the aforesaid problem. An object of the present invention is to provide an atmospheric pressure plasma system capable of focusing the electrons and ions under atmospheric pressure and, thereby, improving the efficiency of substrate treatment using plasma. Advantageous Effects
[11] As apparent from the above description, the atmospheric pressure plasma system of the present invention enables focusing of electrons or ions of plasma on a substrate using a magnetic field and, thus, improves the efficiency of substrate surface treatment.
[12] As described above, it should be evident that the present invention can be implemented through a variety of configurations in the aforementioned field without affecting, influencing or changing the spirit and scope of the invention. Therefore, it is to be understood that the examples and applications illustrated herein are intended to be in the nature of description rather than of limitation. Furthermore, the meaning, scope and higher conceptual understandings of the present invention as well as modifications and variations that arise therefrom should be understood to be extensions to this invention.
Brief Description of the Drawings
[13] The above and other objects, features and advantages of the present invention will become apparent from the following description of the preferred embodiment of the present invention given in conjunction with the accompanying drawings, in which:
[14] Fig. 1 is schematically illustrates the conventional atmospheric pressure plasma system;
[15] Fig. 2 schematically illustrates the atmospheric pressure plasma system according to an embodiment of the present invention;
[16] Fig. 3 illustrates the magnified cross-section of the magnetic field generating means of Fig. 2;
[17] Figs. 4, 5 and 6 illustrate the generation of magnetic field depending on the construction and arrangement in Fig. 3; and
[18] Figs. 7 and 8 illustrate the supply of power to the connecting plate of Fig. 3.
Best Mode for Carrying Out the Invention
[19] In order to attain the aforesaid object, the present invention provides a plasma generation system comprising: an electrode system equipped with a first electrode, a second electrode which opposes the first electrode with a predetermined spacing and a grounding plate which is grounded below the first and second electrodes with a predetermined spacing; a gas storage tank which supplies activated gas between the first and second electrodes; and a power supply which supplies high voltage to the first and second electrodes to generate plasma between the first and second electrodes and the grounding plate, so that a substrate can be surface-treated by the plasma as it is moved between the first and second electrodes and the grounding plate. Below the grounding plate of the electrode system is equipped a magnetic field generating means which generates a magnetic field to focus electrons and ions resulting from the plasma gener ated by the power supply.
[20] Preferably, the magnetic field generating means comprises a plurality of permanent magnets which are arranged with a predetermined spacing and with alternating polarities, a connecting plate which connects the lower part of the permanent magnets and a case which encloses the permanent magnets and the connecting plate, so that the magnetic field generated by the permanent magnets is not affected from the external effect.
[21] And, preferably, the connecting plate is made of magnetic substance.
[22] Also, preferably, an AC power source or a DC power source is selectively connected to the connecting plate in order to increase the magnetic field generated by the permanent magnets.
[23] Also, preferably, the case is made of non-magnetic substance.
[24] Hereinafter, the preferred embodiments of the present invention are described in detail with reference to the accompanying drawings.
[25] The terminology and expression used in this description shall not be interpreted restricted in their common or literal contexts. Rather, they shall be interpreted as conforming to the scope and spirit of the present invention, based on the principle that an inventor may adequately define the concepts of terms and words in order to best describe his/her own invention.
[26] Accordingly, those presented in the examples and drawings of this description are exemplary ones and various modifications and improvements can be made within the scope of the present invention.
[27] Fig. 2 schematically illustrates the atmospheric pressure plasma system according to an embodiment of the present invention.
[28] As seen in the figure, the atmospheric pressure plasma system (100) in accordance with an embodiment of the present invention comprises: an electrode system (320) equipped with a first electrode (310), a second electrode (320) which opposes the first
electrode (310) with a predetermined spacing and a grounding plate (330) which is grounded below the first and second electrodes (310, 320) with a predetermined spacing; a gas storage tank (400) which supplies activated gas between the first electrode (310) and the second electrode (320); and a power supply (500) which supplies high voltage to the first and second electrodes.
[29] When a high voltage is applied between the first electrode (310) and the second electrode (320) by the power supply (500) as the activated gas is supplied from the gas storage tank (400) to between the first electrode (310) and the second electrode (320), plasma is generated between the first and second electrodes (310, 320) and the grounding plate (330) and performs surface treatment of a substrate (200) which moves in between the first and second electrodes (310, 320) and the grounding plate (330).
[30] Below the grounding plate (330) of the electrode system (300) is equipped a magnetic field generating means (600) which generates a magnetic field in the plasma generated by the high voltage applied from the power supply (500) and focuses electrons or ions of the plasma toward the surface of the substrate (200).
[31] As illustrated in Fig. 3, the magnetic field generating means (600) comprises a plurality of permanent magnets (610) which are arranged with a predetermined spacing and with alternating polarities and a connecting plate (620) which connects the lower part of each of the permanent magnets (610).
[32] Three permanent magnets (610) are shown in Fig. 3, but more permanent magnets may be aligned.
[33] By changing the shape and arrangement of the permanent magnets (610), as illustrated in Figs. 4 to 6, the strength of the magnetic field may be controlled to determine the linearity, rotational direction and rotational speed of the electrons and ions inside the plasma.
[34] And, preferably, the connecting plate (620) is made of magnetic substance, so that a stronger magnetic field can be generated from the magnetization as the lower part of the permanent magnets (610) is connected.
[35] That is, it is preferable that the connecting plate (620) is made of metallic substance which is readily magnetized by the permanent magnets (610).
[36] As illustrated in Figs. 7 and 8, the connecting plate (620) may be connected to an
AC power source (700) or a DC power source (800) to increase the magnetic field generated by the permanent magnets (610).
[37] When the connecting plate (620) is connected to an AC power source (700) or a DC power source (800), the permanent magnets (610) and the connecting plate (620) become electromagnets, resulting in the strength of the magnetic field depending on the strength of the AC or DC power.
[38] The magnetic field generating means (600) also comprises a case (630) which
encloses the permanent magnets (610) and the connecting plate (620) and protects the magnetic field generated by the permanent magnets (610) from external effect.
[39] Thus, the case (630) is preferably made of non-magnetic substance in order to prevent the magnetic field generated by the permanent magnets (610) from being influenced by external effect. Particularly, it is preferable that the case (630) is made of copper-based alloy, ceramic material or polymer resin.
[40] In a preferred embodiment of the present invention, the atmospheric pressure plasma system (100) performs surface treatment of a substrate (200) as follows. First, activated gas is supplied from the gas storage tank (400) to between the first electrode (310) and the second electrode (320) of the electrode system (300), while applying high voltage from the power supply (500) to the first and second electrodes (310, 320) of the electrode system (300).
[41] Simultaneously, the substrate (200) is moved between the first and second electrodes (310, 320) of the electrode system (300) and the grounding plate (330).
[42] Then, plasma is generated between the first and second electrodes (310, 320) of the electrode system (300) and the grounding plate (330).
[43] As electrons or ions of the resultant plasma are focused between the permanent magnets (610) of the magnetic field generating means (600) equipped below the substrate (200) by the magnetic field generated by the permanent magnets (610), the plasma can reach the surface of the substrate (200) as focused under atmospheric pressure, thereby improving the efficiency of the substrate (200) surface treatment.
Claims
[ 1 ] A plasma generation system comprising : an electrode system equipped with a first electrode, a second electrode which opposes the first electrode with a predetermined spacing and a grounding plate which is grounded below the first and second electrodes with a predetermined spacing; a gas storage tank which supplies activated gas between the first and second electrodes; and a power supply which supplies high voltage to the first and second electrodes to generate plasma between the first and second electrodes and the grounding plate, so that a substrate can be surface-treated by the plasma as it is moved between the first and second electrodes and the grounding plate, which further comprises a magnetic field generating means below the grounding plate of the electrode system that generates a magnetic field to focus electrons and ions resulting from the plasma generated by the power supply.
[2] The atmospheric pressure plasma system as set forth in Claim 1, wherein the magnetic field generating means comprises: a plurality of permanent magnets which are arranged with a predetermined spacing and with alternating polarities; a connecting plate which connects the lower part of the permanent magnets; and a case which encloses the permanent magnets and the connecting plate, so that the magnetic field generated by the permanent magnets is not affected from the external effect.
[3] The atmospheric pressure plasma system as set forth in Claim 2, wherein the connecting plate is made of magnetic substance.
[4] The atmospheric pressure plasma system as set forth in Claim 2 or Claim 3, wherein the connecting plate is selectively connected to an AC power source or a DC power source in order to increase the strength of the magnetic field generated by the permanent magnets.
[5] The atmospheric pressure plasma system as set forth in Claim 2, wherein the case is made of non-magnetic substance.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20060107431A KR100828590B1 (en) | 2006-11-01 | 2006-11-01 | Atmospheric pressure plasma system |
KR10-2006-0107431 | 2006-11-01 |
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WO2008054039A1 true WO2008054039A1 (en) | 2008-05-08 |
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PCT/KR2006/005459 WO2008054039A1 (en) | 2006-11-01 | 2006-12-14 | Atmospheric pressure plasma system |
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KR (1) | KR100828590B1 (en) |
WO (1) | WO2008054039A1 (en) |
Families Citing this family (2)
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KR101579787B1 (en) | 2014-10-28 | 2015-12-29 | 주식회사 피글 | Atmospheric plasma gas generator |
KR102032294B1 (en) | 2018-04-13 | 2019-10-15 | 주식회사 에이피피 | Apparatus for generating atmospheric pressure plasma |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5369336A (en) * | 1990-12-31 | 1994-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Plasma generating device |
KR20030097488A (en) * | 2002-06-21 | 2003-12-31 | 주식회사 디엠에스 | Atmospheric pressure plasma generator |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20010084567A (en) * | 2000-02-28 | 2001-09-06 | 0 | Apparatus for producing glow discharge plasama in atmosphere |
KR100633240B1 (en) * | 2003-10-14 | 2006-10-12 | 위순임 | Apparatus for generating plasma at atmospheric pressure |
-
2006
- 2006-11-01 KR KR20060107431A patent/KR100828590B1/en active IP Right Grant
- 2006-12-14 WO PCT/KR2006/005459 patent/WO2008054039A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5369336A (en) * | 1990-12-31 | 1994-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Plasma generating device |
KR20030097488A (en) * | 2002-06-21 | 2003-12-31 | 주식회사 디엠에스 | Atmospheric pressure plasma generator |
Also Published As
Publication number | Publication date |
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KR100828590B1 (en) | 2008-05-09 |
KR20080039732A (en) | 2008-05-07 |
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