CN114574807A - Plasma transmission device - Google Patents
Plasma transmission device Download PDFInfo
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- CN114574807A CN114574807A CN202210194844.9A CN202210194844A CN114574807A CN 114574807 A CN114574807 A CN 114574807A CN 202210194844 A CN202210194844 A CN 202210194844A CN 114574807 A CN114574807 A CN 114574807A
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- 230000033001 locomotion Effects 0.000 claims abstract description 33
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- 239000003990 capacitor Substances 0.000 claims description 10
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- 210000002381 plasma Anatomy 0.000 abstract description 98
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- 230000005611 electricity Effects 0.000 abstract description 6
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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Abstract
The invention discloses a plasma transmission device, which comprises a transmission pipeline and a bias voltage power supply device, wherein plasma enters the transmission pipeline from the inlet end of the transmission pipeline and is output from the outlet end of the transmission pipeline, and the transmission pipeline comprises at least two electrode plates which are distributed at intervals along the circumferential direction of the transmission pipeline; the bias voltage power supply device is used for carrying out bias voltage power supply on each electrode plate and switching the power supply state of each electrode plate so as to enable the plasma of the transmission pipeline to change back and forth between outward movement and inward movement, thereby preventing negative electricity particles in the plasma of the transmission pipeline from always moving outward to impact a wall hanging to enable the wall hanging to be negative electricity to damage the conductivity of the wall, and further improving the stability of the transmission performance of the transmission pipeline. The plasmas in the transmission pipeline move back and forth between the shaft walls to enable the plasmas to collide with each other, and the ionization efficiency of the plasmas is improved. In addition, the bias power supply device supplies power to each electrode plate, so that the structure is simple, and the cost of the plasma transmission device can be effectively reduced.
Description
Technical Field
The invention relates to the technical field of vacuum coating, in particular to a plasma transmission device.
Background
The vacuum ion beam coating technology is widely applied to various industries, electromechanical, optical, aerospace and other fields. The cathode vacuum arc source has the advantages of large beam current extraction, high ionization rate, capability of extracting various ions and the like, and can be widely applied to the field of material surface modification, wherein ion beam deposition and ion implantation are the two main applications. The method has the characteristics of low process temperature, high sputtering speed, simple equipment, easy control, large coating area, strong adhesive force and the like, is very suitable for long-time batch production, and can be applied to high-end industries such as DLC (diamond-like carbon) or semiconductor film preparation and the like.
The cathode vacuum arc source generates plasma by arc discharge between a cathode and an anode, and is further used for depositing a coating film by the plasma. However, in the plasma deposition process, the arc spot discharge on the surface of the cathode is violent, and a large amount of macro particles are generated while high-density plasma is generated. Wherein, macro particles mean large particles having a diameter of about several micrometers to several tens micrometers. The cooperative deposition of macro-large particles and plasma often increases the surface roughness of the film, reduces the film-substrate binding force, affects the acquisition of high-quality films, and becomes a key technical bottleneck in the industrial application of the cathode vacuum arc method.
At present, the generation of macro large particles is mainly reduced through an electric field and a magnetic field, or the motion trail of plasma and the macro large particles is changed through the electric field and the magnetic field, so that the plasma and the macro large particles are separated, and the coordination and deposition of the macro large particles and the plasma are avoided. However, the simultaneous setting of the electric field and the magnetic field in the coating apparatus has the following drawbacks:
the method comprises the following steps that firstly, a bias electric field separates positive ions from negative ions, so that the positive ions are bound to the middle of a pipeline, the negative ions are attracted to the pipe wall, and when a large number of negative ions are adsorbed and deposited on the pipe wall, the pipe wall is negatively charged to attract the positive ions to the pipe wall, so that the transmission performance of a transmission pipeline is influenced;
secondly, a plurality of coils are arranged, the energy consumption is high, and the electromagnetic interference is high to influence the stability of particles;
thirdly, more power supplies are needed, which results in higher cost;
fourthly, the filtering effect of the arranged multistage magnetic field and electric field on macro large particles is better, but the structure and the control mode are complex;
and fifthly, in the process of magnetically filtering macro large particles, a bias power supply is connected to the bent pipe, the plasma beam bombards the bent pipe under the action of a magnetic field, the generated arc flow is released through the bias of the bent pipe, and the arc flow is often hundreds of amperes, so that the bias power supply is self-protected and stops, and the stable output of the plasma is influenced.
Disclosure of Invention
The invention aims to provide a plasma transmission device which can improve the stability of plasma transmission, reduce the cost and has a simple structure.
In order to achieve the above object, the present invention provides a plasma transport device comprising:
the plasma enters the conveying pipeline from the inlet end of the conveying pipeline and is output from the outlet end of the conveying pipeline, and the conveying pipeline comprises at least two electrode plates which are distributed at intervals along the circumferential direction of the conveying pipeline;
and the bias voltage power supply device is used for bias voltage power supply of each electrode plate and switching the power supply state of each electrode plate so as to change the plasma in the transmission pipeline back and forth between outward movement and inward movement.
Optionally, a plurality of electrode plates are arranged on the inner wall of the transmission pipeline at intervals, and the transmission pipeline is insulated from the electrode plates; or
The transmission pipeline is formed by alternately splicing a plurality of main body plates and a plurality of electrode plates, and the main body plates are insulated from the electrode plates.
Optionally, at least two of the electrode plates are rotationally symmetric about an axial center of the transport pipe.
Optionally, the bias power supply device includes a bias power supply and a power supply controller, the bias power supply is connected to the power supply controller, and the power supply controller switches the power supply state of each electrode plate.
Optionally, the apparatus further includes a conducting ring, the conducting ring is connected to the power controller, the conducting ring is sleeved on the transmission pipeline and is connected to each of the electrode plates, and the bias power supply supplies power to the plurality of electrode plates through the power controller and the conducting ring.
Optionally, the plasma transmission device further comprises a potential neutralizer, one end of the potential neutralizer is connected to the end of the electrode plate far away from the conductive ring, and the other end of the potential neutralizer is grounded.
Optionally, the potential neutralizer comprises at least two CR circuits, each CR circuit comprises a capacitor and a resistor connected in series with each other, and the at least two CR circuits are respectively connected to the at least two electrode plates.
Optionally, the apparatus includes three rotationally symmetric electrode plates, the power supply controller is a three-phase IC controller, the conductive ring is a three-phase conductive ring, the three electrode plates are respectively connected to three phases of the three-phase IC controller through the three-phase conductive ring, and the three-phase IC controller is connected to the bias power supply; and the three-phase IC controller converts the bias power supply into three-phase power to respectively supply power to the three electrode plates.
Optionally, the apparatus includes four rotationally symmetric electrode plates, the power supply controller is a three-phase IC controller, the conductive ring is a three-phase conductive ring, a first phase of the three-phase IC controller is connected to two electrode plates that are symmetric to each other through a first phase of the three-phase conductive ring, a second phase and a third phase of the three-phase IC controller are respectively connected to the other two electrode plates through a second phase and a third phase of the three-phase conductive ring, and the three-phase IC controller is connected to the bias power supply; and the three-phase IC controller converts the bias power supply into three-phase power to respectively supply power to the four electrode plates.
Optionally, the electrode plate cooling system further comprises a cooling fluid inlet, a cooling fluid channel, and a cooling fluid outlet, wherein the cooling fluid inlet and the cooling fluid outlet are respectively formed in the side wall of the conveying pipeline, the side wall of the conveying pipeline is close to the inlet end and the outlet end, the cooling fluid inlet is externally connected with an external cooling system, and cooling fluid of the external cooling system flows into the cooling fluid channel from the cooling fluid inlet and is output from the cooling fluid outlet to cool the electrode plate.
In the plasma transmission device, at least two electrode plates are distributed at intervals along the circumferential direction of the transmission pipeline, and the bias power supply is configured to switch the power supply state of each electrode plate so as to enable the plasma in the transmission pipeline to change back and forth between outward movement and inward movement, so that the plasma can move back and forth between the central tube axis and the tube wall of the transmission pipeline, thereby preventing negative electricity particles in the plasma in the transmission pipeline from always moving outward to impact a wall hanging to enable the tube wall to be negative electricity, leading positive ions to be adsorbed and deposited to damage the conductivity of the tube wall, and further improving the stability of the transmission performance of the transmission pipeline. Meanwhile, the plasmas in the transmission pipeline move back and forth between the shaft walls, so that the plasmas collide with each other, and the ionization efficiency of the plasmas is improved. In addition, the bias power supply device supplies power to each electrode plate, so that the structure is simple, and the cost of the plasma transmission device can be effectively reduced.
Drawings
Fig. 1 is a structural view of a plasma transport device according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of an outlet end of a transport pipe according to an embodiment of the present invention.
Fig. 3 is a structural view of a plasma transport device according to another embodiment of the present invention.
Fig. 4 is a cross-sectional view of a port of a transfer pipe according to another embodiment of the present invention.
Fig. 5 is a diagram illustrating a change in shape of a plasma beam in a plasma transport apparatus according to another embodiment of the present invention.
Detailed Description
In order to explain technical contents, structural features, and effects of the present invention in detail, the following description is made in conjunction with the embodiments and the accompanying drawings.
As shown in fig. 1 to 5, the embodiment of the present invention discloses a plasma transport apparatus, which includes a transport pipe 10 and a bias voltage power supply device 20, wherein plasma enters the transport pipe 10 from an inlet end of the transport pipe 10 and is output from an outlet end of the transport pipe 10, the transport pipe 10 includes at least two electrode plates 11 distributed at intervals along a circumferential direction thereof, and the bias voltage power supply device 20 is configured to bias power to each electrode plate 11 and switch a power supply state of each electrode plate 11 so that the plasma in the transport pipe 10 is changed back and forth between an outward movement and an inward movement.
In the embodiment of the present invention, at least two electrode plates 11 are distributed at intervals along the circumferential direction of the transmission pipeline 10, and the bias voltage power supply device 20 is configured to switch the power supply state of the electrode plates 11 to change the plasma of the transmission pipeline 10 back and forth between the outward movement and the inward movement, so that the plasma can move back and forth between the central tube axis and the tube wall of the transmission pipeline 10, thereby preventing electrons and negative electricity particles in the plasma in the transmission pipeline 10 from always moving outward to impact the wall to make the tube wall be negative electricity, so that positive ions are adsorbed and deposited to damage the conductivity of the tube wall, and further improving the stability of the transmission performance of the transmission pipeline 10. Meanwhile, as the plasmas in the transmission pipeline 10 move back and forth between the shaft walls, the plasmas collide with each other, and the ionization efficiency of the plasmas is further improved. In addition, the bias power supply device 20 supplies power to each electrode plate 11, so that the structure is simple, and the cost of the plasma transmission device can be effectively reduced.
In the plasma transport apparatus according to the embodiment of the present invention, the "outward movement" refers to a movement of the plasma toward a direction close to the tube wall of the transport duct 10, and the "inward movement" refers to a movement of the plasma toward a direction close to the tube central axis of the transport duct 10; "negatively charged particles" include negative ions and/or electrons.
It will be appreciated that each electrode plate 11 extends from the inlet end of the transport duct 10 to the outlet end of the transport duct 10 in order to enable the transport of plasma throughout the transport duct 10 to be varied back and forth between outward and inward movements depending on the state of energization of the electrode plate 11.
In the embodiment of the present invention, a plurality of electrode plates 11 may be disposed at intervals on the inner wall of the transmission pipeline 10, and the transmission pipeline 10 is insulated from the electrode plates 11, so that when the bias power supply device 20 switches the power supply state of each electrode plate 11, a voltage difference is formed between each electrode plate 11 and the transmission pipeline 10 to form electric fields in different directions, thereby causing the plasma to move inward or outward. Due to the insulation between the electrode plates 11 and the transmission pipeline 10, the transmission pipeline 10 can be prevented from being electrified when the electrode plates 11 are electrified, and the switching of the power supply states of the plurality of electrode plates 11 can not enable the plasma of the transmission pipeline 10 to change back and forth between the outward movement and the inward movement.
It is understood that in order to stably mount the electrode plate 11 on the inner wall of the transmission pipe 10, the electrode plate 11 may be fastened to the inner wall of the transmission pipe 10 by a fastening member such as a screw or a clip.
The electrode plate 11 requires good conductivity, and preferably, the electrode plate 11 may be a copper electrode plate. Of course, the electrode plate 11 can also be made of other conductive materials, such as aluminum, stainless steel, etc.; the transport pipe 10 may be made of stainless steel and is provided to be insulated from the electrode plate 11.
As shown in fig. 1 and 3, the arrows in the plasma beam flow pattern in the transmission duct 10 indicate the directional output.
As shown in fig. 2 and 4, the transmission pipeline 10 may also be formed by alternatively splicing a plurality of main body plates 12 and a plurality of electrode plates 11, the main body plates 12 are insulated from the electrode plates 11, and when the bias voltage supply device 20 switches the power supply state of each electrode plate 11, each electrode plate 11 forms electric fields in different directions, so that the plasma is changed back and forth between the inward movement and the outward movement. The electrode plates 11 and the main body plates 12 are alternately spliced to form the transmission pipeline 10, so that the cost of the transmission pipeline 10 can be reduced.
Due to the insulation between the electrode plate 11 and the main body plate 12, the main body plate 12 can be prevented from being electrified when the electrode plate 11 is electrified, so that the whole transmission pipeline 10 is electrified, the potential of each electrode plate 11 cannot be changed when the bias power supply device 20 is switched, and the plasma cannot be controlled to move back and forth.
It can be understood that, in order to ensure the sealing property of the joint between the electrode plate 11 and the main body plate 12 to ensure the vacuum environment in the transmission pipeline 10, a sealing ring may be disposed in the sealing groove formed in the contact surface, and the electrode plate 11 and the main body plate 12 are fixedly joined together by a fastening member such as a screw or a clamp.
The electrode plate 11 requires good conductivity, and preferably, the electrode plate 11 may be a copper electrode plate. Of course, the electrode plate 11 can be made of other conductive materials, such as aluminum, stainless steel, etc.; the main body plate 12 may be made of stainless steel and is provided to be insulated from the electrode plate 11.
As shown in fig. 2 and 4, at least two electrode plates 11 are rotationally symmetric about the axis of the transport pipe 10, which facilitates the control of the inward and outward movement of the plasma by the bias power supply 20.
It should be noted that "rotational symmetry" does not only mean that each circuit board 11 is completely overlapped with the original state after rotating for a certain angle about the axis of the transmission pipeline 10, but also includes the case that each circuit board 11 is partially overlapped with the original state after rotating for a certain angle about the axis of the transmission pipeline 10, for example, the central axis of each electrode plate 11 is equidistantly arranged along the axis of the transmission pipeline 10, the sizes of each circuit board 11 are different, and after each circuit board 11 is rotated for a certain angle about the axis of the transmission pipeline 10, the central axis of each circuit board 11 is completely overlapped with the central axis of each circuit board 11 in the original state, but each circuit board 11 is not completely overlapped; for another example, after the electrode plates 11 are rotated by a certain angle with respect to the central axis of the transmission duct 11, the circuit boards 11 are overlapped with only the circuit boards 11 before the rotation.
In order to facilitate the bias power supply device 20 to switch the power supply state of each electrode plate 11, the bias power supply device 20 includes a bias power supply 21 and a power supply controller 22, the bias power supply 21 is connected to the power supply controller 22, and the power supply controller 22 switches the power supply state of each electrode plate 11.
Further, the plasma transmission device further comprises a conducting ring 30, the conducting ring 30 is connected with the power controller 22, the conducting ring 30 is sleeved on the transmission pipeline 10 and is respectively connected with each electrode plate 11, and the bias power source 21 supplies power to the plurality of electrode plates 11 through the power controller 22 and the conducting ring 30, so that the power controller 22 and the electrode plates 11 are connected more stably, and the safety can be improved.
As shown in fig. 1 and 3, the plasma transmission apparatus further includes a potential neutralizer 40, one end of the potential neutralizer 40 is connected to one end of the electrode plate 11 away from the conductive ring 30, and the other end is grounded, so that when the power controller 22 stops supplying power to any one of the electrode plates 11, the charges of the electrode plate 11 can be rapidly released to the ground, thereby releasing the energy of the electrode plate 11 in a short time and improving the circuit stability of the transmission pipeline 10.
Specifically, the potential neutralizer 40 includes at least two CR circuits, each of which includes a capacitor C and a resistor R connected in series with each other, and the at least two CR circuits are respectively connected to the at least two electrode plates 11.
Specifically, each CR circuit is connected to an electrode plate 11; in each CR circuit, one end of a capacitor C is connected to the electrode plate 11, the other end of the capacitor C is connected to one end of a resistor R, the other end of the resistor R is grounded, when the power controller 22 supplies power to any electrode plate 11, current flows through the electrode plate 11 to the capacitor C, the capacitor C stores charge, and when the power controller 22 disconnects power to the electrode plate 11, the charge stored in the capacitor C is released to the resistor R and flows into the ground, so that the rapid release of energy from the electrode plate 11 is realized, and the stability of the transmission pipeline 10 is protected.
More specifically, the total capacitance C of the capacitor C is 10000 muF or more, the withstand voltage value is 200V or more, and the resistance value of the resistor R is 1000 omega or more. Of course, the capacitor C and the resistor R can be matched according to actual requirements.
Of course, the potential neutralizer 40 is not limited to the above specific example, and may be configured as other devices capable of maintaining the potential of the upper electrode plate 11 when the electrode plate 11 is powered and rapidly discharging the charges on the upper electrode plate 11 when the electrode plate 11 is powered off.
As shown in fig. 1 and 2, the plasma transmission apparatus includes three electrode plates 11 that are rotationally symmetric, the power controller 22 is a three-phase IC controller, the conductive ring 30 is a three-phase conductive ring, the three electrode plates 11 are respectively connected to three phases of the three-phase IC controller through the three-phase conductive ring, and the three-phase IC controller is connected to the bias power supply 21; the three-phase IC controller converts the bias power supply 21 into three-phase power to supply the three electrode plates 11, respectively.
Specifically, as shown in fig. 2, three phases of the three-phase IC controller are an X phase, a Y phase, and a Z phase, three electrode plates 11 are distributed at intervals along a circumferential direction of the transmission pipeline 10, the three electrode plates 11 are connected to the X phase, the Y phase, and the Z phase of the three-phase IC controller through three-phase conductive rings, respectively, the three electrode plates 11 are a first electrode plate, a second electrode plate, and a third electrode plate, respectively, the first electrode plate is connected to the X phase, the second electrode plate is connected to the Y phase, and the third electrode plate is connected to the Z phase. The bias power supply 21 is a pulse bias, the bias power supply 21 can control parameters such as waveforms, sizes, duty ratios and the like of output of an X phase, a Y phase and a Z phase of the phase IC controller, two phases of the three-phase IC controller are simultaneously connected by controlling an output mode of the three-phase IC controller, and the two corresponding electrode plates 11 can be simultaneously electrified; when the X phase and the Z phase are simultaneously switched on, the first electrode plate and the third electrode plate are in positive potential, under the action of a positive bias electric field formed by the first electrode plate and the third electrode plate, positive ions in the plasma deflect towards the second electrode plate to move, negative particles in the plasma deflect towards the first electrode plate and the third electrode plate to move, and the shape of the plasma beam is in an ellipsoid shape deflected towards the second electrode plate; when the Y phase and the Z phase are simultaneously switched on, the second electrode plate and the third electrode plate are in positive potential, under the action of a positive bias electric field formed by the second electrode plate and the third electrode plate, positive ions in the plasma deflect towards the first electrode plate to move, negative particles in the plasma deflect towards the second electrode plate and the third electrode plate to move, and the shape of the plasma beam is in an ellipsoid shape deflected towards the first electrode plate; under the rapid phase change of the three-phase IC controller and the three-phase conducting ring, the plasma in the transmission pipeline 10 rapidly changes back and forth between the inward movement and the outward movement, so that the plasma in the transmission pipeline 10 can form a plasma beam bound to the middle of the transmission pipeline 10, and further a stable quincunx plasma beam (as shown in fig. 2) can be formed at the outlet end of the transmission pipeline 10, so that the deposition of the plasma is more stable.
As shown in fig. 3 to 5, the plasma transport apparatus includes four electrode plates 11, the power controller 22 is a three-phase IC controller, the conductive ring is a three-phase conductive ring, a first phase of the three-phase IC controller is connected to two electrode plates 11 that are symmetrical to each other through a first phase of the three-phase conductive ring, a second phase and a third phase of the three-phase IC controller are respectively connected to the other two electrode plates 11 through a second phase and a third phase of the three-phase conductive ring, and the three-phase IC controller is connected to the bias power source 21; the three-phase IC controller converts the bias power supply 21 into three-phase power to supply the four electrode plates 11, respectively.
Specifically, as shown in fig. 4 and 5, three phases of the three-phase IC controller are an X phase, a Y phase, and a Z phase, four electrode plates 11 are arranged at equal intervals along the circumferential direction of the transmission pipeline 10, the four electrode plates 11 are connected to the three phases of the three-phase IC controller through three-phase conductive rings, the four electrode plates 11 are a first electrode plate, a second electrode plate, a third electrode plate, and a fourth electrode plate, respectively, the first electrode plate and the third electrode plate are connected to the X phase, the second electrode plate is connected to the Y phase, and the fourth electrode plate is connected to the Z phase. The bias power supply 21 is a pulse bias, the bias power supply device 20 can control parameters such as waveforms, sizes, duty ratios and the like of X-phase, Y-phase and Z-phase outputs of the phase IC controller, and by controlling the output mode of the three-phase IC controller, two phases of the three-phase IC controller are simultaneously switched on, so that two electrode plates 11 or three electrode plates 11 can be simultaneously charged, for example, when the X-phase and the Y-phase are simultaneously switched on, the first electrode plate, the second electrode plate and the third electrode plate are in positive potentials, under the action of a positive bias electric field formed by the first electrode plate, the second electrode plate and the third electrode plate, positive ions in the plasma deflect towards the fourth electrode plate to move, negative particles in the plasma deflect towards the first electrode plate, the second electrode plate and the third electrode plate to move, and the shape of a plasma beam is in an ellipsoid shape deflected towards the fourth electrode plate; when the X phase and the Z phase are simultaneously switched on, the first electrode plate, the third electrode plate and the fourth electrode plate are in positive potential, under the action of a positive bias electric field formed by the first electrode plate, the third electrode plate and the fourth electrode plate, positive ions in the plasma deflect towards the second electrode plate to move, negative electric particles in the plasma deflect towards the first electrode plate, the third electrode plate and the fourth electrode plate to move, and the shape of a plasma beam is in an ellipsoid shape deflected towards the second electrode plate; when the Y phase and the Z phase are simultaneously switched on, the second electrode plate and the third electrode plate are in positive potential, under the action of a positive bias electric field formed by the second electrode plate and the fourth electrode plate, positive ions in the plasma move towards the first electrode plate and the third electrode plate, negative particles in the plasma move towards the second electrode plate and the fourth electrode plate, and the shape of the plasma beam is in a dumbbell shape towards the first electrode plate and the third electrode plate; under the rapid phase change of the three-phase IC controller and the three-phase conductive ring, the plasma in the transmission pipeline 10 rapidly changes back and forth between inward movement and outward movement, so that the plasma in the transmission pipeline 10 can form a plasma beam bound at the middle part of the transmission pipeline 10, and the outlet end of the transmission pipeline 10 can form a scanning plasma beam (as shown in FIG. 5) deflected towards the first electrode plate and the third electrode plate, so that the deposition of the plasma is more uniform.
In the embodiment of the present invention, the switching of the power supply state of each electrode plate 11 by the power controller 22 is not limited to the specific example, for example, the power controller 22 may also simultaneously supply power to each electrode plate 11 and simultaneously cut off power, when the power controller 22 supplies power to each electrode plate 11, positive ions in the plasma move inward and negative ions move outward, and when the power controller 22 cuts off power to each electrode plate 11, positive ions in the plasma attract each other, positive ions move outward and negative ions move inward, so that the plasma is changed back and forth between outward movement and inward movement. For another example, the power controller 22 may also switch power to each electrode plate 11, for example, only one of the electrode plates 11 is powered at the same time, and as the power controller 22 switches power to each electrode plate, each electrode plate 11 forms a positive electric field in different directions in the transmission pipeline 10, so that the plasma is changed back and forth between the inward movement and the outward movement. Therefore, the embodiment of the present invention does not limit the switching manner of the power supply state of each electrode plate 11 by the power supply controller 22, as long as the plasma can be changed back and forth between the outward movement and the inward movement.
Of course, in the embodiment of the present invention, the number of the electrode plates 11 is not limited to the above specific example, and the shape of the plasma beam in the transmission duct 10 is also not limited to the above specific example, and the plasma beam is formed into a certain shape according to the number of the electrode plates 11 and the arrangement of the three-phase IC controller.
It is understood that, in order to prevent the electrode plate 11 from overheating, the plasma transport device further includes a cooling fluid inlet 50, a cooling fluid channel 52 and a cooling fluid outlet 51, the cooling fluid inlet 50 and the cooling fluid outlet 51 are respectively opened at the positions of the side wall of the transport pipe 10 near the inlet end and the outlet end, the cooling fluid inlet 50 is externally connected with an external cooling system, and the cooling fluid of the external cooling system flows into the cooling fluid channel 52 from the cooling fluid inlet 50 and is output from the cooling fluid outlet 51 to cool the electrode plate 11.
Specifically, as shown in fig. 1 to 4, the transmission pipeline 10 is formed by sequentially and alternately splicing electrode plates 11 and main body plates 12, a cooling fluid channel 52 is formed through the middle of each electrode plate 11, a cooling fluid inlet 50 is formed at a position of each electrode plate 11 close to the inlet end, a cooling fluid outlet 51 is formed at a position of each electrode plate 11 close to the outlet end, and an external cooling system sends cooling fluid from the cooling fluid inlet 50 into the cooling fluid channel 52 in each electrode plate 11, so as to implement cooling and heat dissipation of the electrode plates 11.
In other embodiments, an interlayer (not shown) may be formed outside the transmission channel 10, the cooling fluid channel 52 is the interlayer, the cooling fluid inlet 50 and the cooling fluid outlet 51 are respectively disposed at positions near the inlet end and the outlet end of the transmission channel 10, and the external cooling system inputs the cooling fluid from the cooling fluid inlet 50 into the cooling fluid channel 52, so as to cool and dissipate the electrode plates 11 distributed on the transmission channel 10, and also cool and dissipate the transmission channel 10.
As shown in fig. 1 and 3, the plasma is generated by a cathode arc source 60 and a dc arc power source 70 provided at the inlet end of the transfer pipe 10, the anode of the dc arc power source 70 is connected to the transfer pipe 10, the cathode of the dc arc power source 70 is connected to the cathode arc source 60, and the cathode arc source 60 generates the plasma when the dc arc power source 70 is operated. By connecting the positive pole of the dc arc power supply 70 to the transmission pipeline 10 and the negative pole to the cathode arc source 60, arc striking and stable ablation are achieved to generate plasma when the dc arc power supply 70 is in operation.
It should be noted that when the transmission pipeline 10 is formed by alternately splicing the main body plates 12 and the electrode plates 11, the positive electrode of the dc arc power supply 70 is connected to the main body plates 12.
The above disclosure is only a preferred embodiment of the present invention, which is convenient for those skilled in the art to understand and implement, and certainly not to limit the scope of the present invention, which is not intended to be covered by the present invention.
Claims (10)
1. A plasma transport device, comprising:
the plasma enters the conveying pipeline from the inlet end of the conveying pipeline and is output from the outlet end of the conveying pipeline, and the conveying pipeline comprises at least two electrode plates which are distributed at intervals along the circumferential direction of the conveying pipeline;
and the bias voltage power supply device is used for bias voltage power supply of each electrode plate and switching the power supply state of each electrode plate so as to change the plasma in the transmission pipeline back and forth between outward movement and inward movement.
2. The plasma transport device of claim 1,
the electrode plates are arranged on the inner wall of the transmission pipeline at intervals, and the transmission pipeline is insulated from the electrode plates; or
The transmission pipeline is formed by alternately splicing a plurality of main body plates and a plurality of electrode plates, and the main body plates are insulated from the electrode plates.
3. The plasma transport apparatus of claim 1, wherein at least two of the electrode plates are rotationally symmetric about an axis of the transport conduit.
4. The plasma transmitting device according to claim 1, wherein the bias power supply means includes a bias power supply and a power supply controller, the bias power supply is connected to the power supply controller, and the power supply controller switches the power supply state of each of the electrode plates.
5. The plasma delivery apparatus of claim 4, further comprising a conductive ring, wherein the conductive ring is connected to the power controller, the conductive ring is sleeved on the delivery pipeline and is connected to each of the electrode plates, and the bias power supply supplies power to the plurality of electrode plates through the power controller and the conductive ring.
6. The plasma delivery apparatus of claim 5, further comprising a potential neutralizer, wherein one end of the potential neutralizer is connected to the end of the electrode plate away from the conductive ring, and the other end of the potential neutralizer is grounded.
7. The plasma delivery device of claim 6, wherein said potential neutralizer comprises at least two CR circuits, each of said CR circuits comprising a capacitor and a resistor connected in series with each other, said at least two CR circuits being connected to at least two of said electrode plates, respectively.
8. The plasma delivery apparatus of any of claims 5 to 7, wherein the apparatus comprises three rotationally symmetric electrode plates, the power supply controller is a three-phase IC controller, the conductive ring is a three-phase conductive ring, the three electrode plates are respectively connected to three phases of the three-phase IC controller through the three-phase conductive ring, and the three-phase IC controller is connected to the bias power supply; and the three-phase IC controller converts the bias power supply into three-phase power to respectively supply power to the three electrode plates.
9. The plasma delivery apparatus of any of claims 5 to 7, wherein the apparatus comprises four rotationally symmetric electrode plates, the power supply controller is a three-phase IC controller, the conductive loop is a three-phase conductive loop, a first phase of the three-phase IC controller is connected to two of the electrode plates that are symmetric to each other through a first phase of the three-phase conductive loop, a second phase and a third phase of the three-phase IC controller are connected to the other two of the electrode plates through a second phase and a third phase of the three-phase conductive loop, respectively, and the three-phase IC controller is connected to the bias power supply; and the three-phase IC controller converts the bias power supply into three-phase power to respectively supply power to the four electrode plates.
10. The plasma delivery apparatus according to claim 1, further comprising a cooling fluid inlet, a cooling fluid channel, and a cooling fluid outlet, wherein the cooling fluid inlet and the cooling fluid outlet are respectively disposed on the side wall of the delivery pipe near the inlet end and the outlet end, the cooling fluid inlet is externally connected to an external cooling system, and a cooling fluid of the external cooling system flows into the cooling fluid channel from the cooling fluid inlet and is output from the cooling fluid outlet to cool the electrode plate.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08176812A (en) * | 1994-12-26 | 1996-07-09 | Nissin Electric Co Ltd | Production of shell with film formed on its inner periphery and device therefor |
| US6026763A (en) * | 1997-03-31 | 2000-02-22 | Samsung Electronics Co., Ltd. | Thin-film deposition apparatus using cathodic arc discharge |
| CN106548914A (en) * | 2015-09-17 | 2017-03-29 | 中微半导体设备(上海)有限公司 | A kind of apparatus for processing plasma and its purging system and method |
| CN109718775A (en) * | 2018-12-18 | 2019-05-07 | 辽宁石油化工大学 | A kind of CuCo2O4The preparation method of nano spinel catalyst |
| US20200075303A1 (en) * | 2017-07-12 | 2020-03-05 | Xiaofeng Zhao | Device and method for generating, storing and transmitting positive and negative ions |
| CN111495371A (en) * | 2020-05-28 | 2020-08-07 | 太原理工大学 | Rapid preparation method of cobalt spinel catalyst |
-
2022
- 2022-02-28 CN CN202210194844.9A patent/CN114574807B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08176812A (en) * | 1994-12-26 | 1996-07-09 | Nissin Electric Co Ltd | Production of shell with film formed on its inner periphery and device therefor |
| US6026763A (en) * | 1997-03-31 | 2000-02-22 | Samsung Electronics Co., Ltd. | Thin-film deposition apparatus using cathodic arc discharge |
| CN106548914A (en) * | 2015-09-17 | 2017-03-29 | 中微半导体设备(上海)有限公司 | A kind of apparatus for processing plasma and its purging system and method |
| US20200075303A1 (en) * | 2017-07-12 | 2020-03-05 | Xiaofeng Zhao | Device and method for generating, storing and transmitting positive and negative ions |
| CN109718775A (en) * | 2018-12-18 | 2019-05-07 | 辽宁石油化工大学 | A kind of CuCo2O4The preparation method of nano spinel catalyst |
| CN111495371A (en) * | 2020-05-28 | 2020-08-07 | 太原理工大学 | Rapid preparation method of cobalt spinel catalyst |
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