JP3438721B2 - Electronic component manufacturing method - Google Patents

Electronic component manufacturing method

Info

Publication number
JP3438721B2
JP3438721B2 JP2000397702A JP2000397702A JP3438721B2 JP 3438721 B2 JP3438721 B2 JP 3438721B2 JP 2000397702 A JP2000397702 A JP 2000397702A JP 2000397702 A JP2000397702 A JP 2000397702A JP 3438721 B2 JP3438721 B2 JP 3438721B2
Authority
JP
Japan
Prior art keywords
internal connection
package
connection electrode
electrode
shield electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000397702A
Other languages
Japanese (ja)
Other versions
JP2001185573A (en
Inventor
弘三 村上
邦博 藤井
聡 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2000397702A priority Critical patent/JP3438721B2/en
Publication of JP2001185573A publication Critical patent/JP2001185573A/en
Application granted granted Critical
Publication of JP3438721B2 publication Critical patent/JP3438721B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01047—Silver [Ag]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
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    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は例えばＳＡＷデバイ
スなどパッケージ内に素子を収納する電子部品の製造方
法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electronic component, such as a SAW device, in which an element is housed in a package.

【０００２】[0002]

【従来の技術】図５は従来のＳＡＷデバイスの上面図、
図６は同断面図である。2. Description of the Related Art FIG. 5 is a top view of a conventional SAW device,
FIG. 6 is a sectional view of the same.

【０００３】内側壁の段差の上面に複数の内部接続電極
１０２を形成したパッケージ１００の内部底面の全体に
シールド電極１０１上に接着層１０５によりＳＡＷ素子
１０３を固定し、ＳＡＷ素子１０３の電極と内部接続電
極１０２とをワイヤ１０４で電気的に接続し、パッケー
ジ１００の上端面に設けたシームリング１０７にリッド
１０６を溶接して構成されていた。The SAW element 103 is fixed by an adhesive layer 105 on the shield electrode 101 on the entire inner bottom surface of the package 100 in which a plurality of internal connection electrodes 102 are formed on the upper surface of the step of the inner wall, and the electrodes and the inside of the SAW element 103 are fixed. The connection electrode 102 is electrically connected with the wire 104, and the lid 106 is welded to the seam ring 107 provided on the upper end surface of the package 100.

【０００４】[0004]

【発明が解決しようとする課題】この構成によると、シ
ールド電極１０１と内部接続電極１０２とが同じ金属で
形成されているため、パッケージ１００を上面から見た
ときにシールド電極１０１と内部接続電極１０２との境
界の認識が難しく、内部接続電極１０２のワイヤ１０４
との接続位置を精度良く決定するのが困難であった。According to this structure, since the shield electrode 101 and the internal connection electrode 102 are formed of the same metal, the shield electrode 101 and the internal connection electrode 102 can be seen when the package 100 is viewed from above. It is difficult to recognize the boundary with the wire 104 of the internal connection electrode 102.
It was difficult to accurately determine the connection position with.

【０００５】そこで本発明は、内部接続電極のワイヤと
の接続位置を精度よく決定することのできる電子部品の
製造方法を提供することを目的とするものである。Therefore, it is an object of the present invention to provide a method of manufacturing an electronic component capable of accurately determining the connection position of an internal connection electrode with a wire.

【０００６】[0006]

【課題を解決するための手段】この目的を達成するため
に本発明は、相対向する壁側に段差を有し、この段差の
上端面に複数の内部接続電極を有し、内部底面にシール
ド電極と、上面から見た時前記内部接続電極の一辺ある
いはその延長線とその一辺が直交するようなシールド電
極非形成部を有するパッケージに素子を実装する第１の
工程と、次に前記内部接続電極の一辺あるいはその延長
線と前記シールド電極非形成部の一辺の交点を少なくと
も二点検出し、前記素子と前記内部接続電極とを接続す
るワイヤの接続位置を決定する第２の工程と、次いで前
記素子と前記内部接続電極とをワイヤで接続する第３の
工程と、その後前記パッケージをリッドで封止する第４
の工程とを備え、前記段差間の幅は、前記内部接続電極
側より内部底面側を広くしたものであり、ワイヤの接続
位置を精度良く決定することができる。In order to achieve this object, the present invention has a step on the opposite wall sides, a plurality of internal connection electrodes on the upper end surface of the step, and a shield on the inner bottom surface. A first step of mounting an element on a package having an electrode and a shield electrode non-formation portion such that one side of the internal connection electrode or its extension line is orthogonal to one side of the internal connection electrode when viewed from above, and then the internal connection. At least two intersections of one side of the electrode or an extension thereof and one side of the shield electrode non-forming portion are inspected, and a second step of determining a connection position of a wire connecting the element and the internal connection electrode; Third step of connecting the element and the internal connection electrode with a wire, and then fourth step of sealing the package with a lid
And the width between the steps is equal to the internal connection electrode.
Since the inner bottom surface side is wider than the inner side , the connection position of the wire can be accurately determined.

【０００７】[0007]

【発明の実施の形態】本発明の請求項１に記載の発明
は、相対向する壁側に段差を有し、この段差の上端面に
複数の内部接続電極を有し、内部底面にシールド電極
と、上面から見た時前記内部接続電極の一辺あるいはそ
の延長線とその一辺が直交するようなシールド電極非形
成部を有するパッケージに素子を実装する第１の工程
と、次に前記内部接続電極の一辺あるいはその延長線と
前記シールド電極非形成部の一辺の交点を少なくとも二
点検出し、前記素子と前記内部接続電極とを接続するワ
イヤの接続位置を決定する第２の工程と、次いで前記素
子と前記内部接続電極とをワイヤで接続する第３の工程
と、その後前記パッケージをリッドで封止する第４の工
程とを備え、前記段差間の幅は、前記内部接続電極側よ
り内部底面側を広くした電子部品の製造方法であり、ワ
イヤの接続位置を精度良く決定することができる。BEST MODE FOR CARRYING OUT THE INVENTION The invention according to claim 1 of the present invention has a step on the opposite wall sides, a plurality of internal connection electrodes on the upper end surface of the step, and a shield electrode on the inner bottom surface. A first step of mounting an element on a package having a shield electrode non-forming portion such that one side of the internal connection electrode or its extension line is orthogonal to one side when viewed from above, and then the internal connection electrode At least two intersections of one side or an extension thereof and one side of the shield electrode non-forming portion are checked to determine a connection position of a wire connecting the element and the internal connection electrode, and then the element And a step of connecting the internal connection electrode to the internal connection electrode with a wire, and a fourth step of sealing the package with a lid thereafter .
This is a method for manufacturing an electronic component in which the inner bottom surface side is widened , and the wire connection position can be accurately determined.

【０００８】本発明の請求項２に記載の発明は、相対向
する壁側に段差を有し、この段差の上端面に複数の内部
接続電極を有し、内部底面にシールド電極と、上面から
見た時前記内部接続電極の一辺あるいはその延長線とそ
の一辺が直交するようなシールド電極非形成部を有する
パッケージに素子を実装する第１の工程と、次いで前記
素子と前記内部接続電極とをワイヤで接続する第２の工
程と、その後前記パッケージをリッドで封止する第３の
工程とを備え、前記段差間の幅は、前記内部接続電極側
より内部底面側を広くし、前記第１の工程において、前
記内部接続電極の一辺あるいはその延長線と前記シール
ド電極非形成部の一辺の交点を少なくとも二点検出し、
前記素子の実装位置を決定する電子部品の製造方法であ
り、素子の実装位置を高精度に決定することができる。The invention according to claim 2 of the present invention has a step on the opposite wall sides, a plurality of internal connection electrodes on the upper end surface of the step, a shield electrode on the inner bottom surface, and When viewed, a first step of mounting an element in a package having a shield electrode non-forming portion in which one side of the internal connection electrode or an extension line thereof is orthogonal to the one side, and then the element and the internal connection electrode The method includes a second step of connecting with a wire and a third step of thereafter sealing the package with a lid, and the width between the steps is the internal connection electrode side.
The inner bottom surface side is made wider, and in the first step, at least two intersections of one side of the internal connection electrode or its extension and one side of the shield electrode non-forming portion are inspected.
This is a method of manufacturing an electronic component for determining the mounting position of the element, and the mounting position of the element can be determined with high accuracy.

【０００９】本発明の請求項３に記載の発明は、相対向
する壁側に段差を有し、この段差の上端面に複数の内部
接続電極を有し、内部底面にシールド電極と、上面から
見た時前記内部接続電極の一辺あるいはその延長線とそ
の一辺が直交するようなシールド電極非形成部を有する
パッケージに素子を実装する第１の工程と、次に前記素
子と前記内部接続電極とをワイヤで接続する第２の工程
と、その後前記パッケージをリッドで封止する第３の工
程とを備え、前記段差間の幅は、前記内部接続電極側よ
り内部底面側を広くし、前記第１及び第２の工程におい
て、前記内部接続電極の一辺あるいはその延長線と前記
シールド電極非形成部の一辺の交点を少なくとも二点検
出し、前記素子の実装位置及び前記ワイヤの接続位置を
決定する電子部品の製造方法であり、素子の実装位置及
びワイヤの接続位置を精度良く決定することができる。According to a third aspect of the present invention, there is a step on the opposite wall sides, a plurality of internal connection electrodes are provided on the upper end surface of the step, a shield electrode is provided on the inner bottom surface, and When viewed, a first step of mounting an element in a package having a shield electrode non-formation portion such that one side of the internal connection electrode or its extension line is orthogonal to one side thereof, and then the element and the internal connection electrode And a third step of sealing the package with a lid, and the width between the steps is different from the internal connection electrode side.
In the first and second steps, at least two intersections between one side of the internal connection electrode or its extension and one side of the shield electrode non-formation portion are inspected to determine the mounting position of the element. And a method of manufacturing an electronic component for determining the connection position of the wire, and the mounting position of the element and the connection position of the wire can be accurately determined.

【００１０】以下、本発明の一実施の形態について図面
を参照しながらＳＡＷデバイスを例に説明する。An embodiment of the present invention will be described below by taking a SAW device as an example with reference to the drawings.

【００１１】（実施の形態１）図１は本発明の実施の形
態１，２のＳＡＷデバイスの上面図、図２は図１のＡ−
Ｂ断面図である。(Embodiment 1) FIG. 1 is a top view of a SAW device according to Embodiments 1 and 2 of the present invention, and FIG. 2 is A- of FIG.
It is a B sectional view.

【００１２】１０はセラミック基板、１１は第１のセラ
ミック枠体、１２は第２のセラミック枠体でこのセラミ
ック基板１０と第１のセラミック枠体１１と第２のセラ
ミック枠体１２で内側壁に段差２２を有したパッケージ
１３を構成している。また１４は第１のセラミック枠体
１１の上面および第１のセラミック枠体１１とセラミッ
ク基板１０の外側面、さらにセラミック基板１０の底面
の一部に形成した内部接続電極、１５はパッケージ１３
の内底面に形成したシールド電極、１６はシールド電極
１５上に設けた接着層、１７はＳＡＷ素子、１８ａ，１
８ｂはシールド電極非形成部、１９はワイヤ、２０はシ
ームリング、２１はリッドである。10 is a ceramic substrate, 11 is a first ceramic frame, 12 is a second ceramic frame, and this ceramic substrate 10, the first ceramic frame 11 and the second ceramic frame 12 are on the inner wall. The package 13 having the step 22 is configured. Further, 14 is an internal connection electrode formed on the upper surface of the first ceramic frame 11, the outer surface of the first ceramic frame 11 and the ceramic substrate 10, and a part of the bottom surface of the ceramic substrate 10, and 15 is the package 13
, A shield electrode formed on the inner bottom surface of the substrate, 16 an adhesive layer provided on the shield electrode 15, 17 a SAW element, 18a, 1
8b is a shield electrode non-forming portion, 19 is a wire, 20 is a seam ring, and 21 is a lid.

【００１３】まず、セラミック基板１０の表面、裏面お
よび側面に形成しようとするシールド電極１５及び内部
接続電極１４と同じ形状のメッキ下地層を形成する。First, a plating underlayer having the same shape as the shield electrode 15 and the internal connection electrode 14 to be formed on the front surface, the back surface and the side surface of the ceramic substrate 10 is formed.

【００１４】次に、このセラミック基板１０上に第１の
セラミック枠体１１を配置する。この第１のセラミック
枠体１１の表面及び外側面にも形成しようとする内部接
続電極１４と同じ形状のメッキ下地層を形成する。Next, the first ceramic frame 11 is arranged on the ceramic substrate 10. A plating underlayer having the same shape as the internal connection electrode 14 to be formed is formed on the surface and the outer surface of the first ceramic frame 11.

【００１５】次いで、この第１のセラミック枠体１１と
外周形状が同じで幅が第１のセラミック枠体１１よりも
小さい第２のセラミック枠体１２を第１のセラミック枠
体１１の上に配置して内側壁に段差２２を有する構成と
して焼成し、セラミック基板１０と第１及び第２のセラ
ミック枠体１１，１２を一体化させてパッケージ１３を
作製する。この第２のセラミック枠体１２の上面にもメ
ッキ下地層を形成している。Next, a second ceramic frame body 12 having the same outer peripheral shape as the first ceramic frame body 11 and a width smaller than that of the first ceramic frame body 11 is arranged on the first ceramic frame body 11. Then, the ceramic substrate 10 and the first and second ceramic frame bodies 11 and 12 are integrated with each other to form a package 13 by firing the structure having a step 22 on the inner wall. A plating base layer is also formed on the upper surface of the second ceramic frame 12.

【００１６】ここでセラミック基板１０、第１のセラミ
ック枠体１１、第２のセラミック枠体１２はすべて酸化
アルミニウムを主成分とし、メッキ下地層はタングステ
ンを主成分とするものである。Here, the ceramic substrate 10, the first ceramic frame 11 and the second ceramic frame 12 all have aluminum oxide as a main component, and the plating underlayer has tungsten as a main component.

【００１７】その後、パッケージ１３のメッキ下地層上
にニッケルメッキを行い、パッケージ１３の第２のセラ
ミック枠体１２の上端面部分に銀ろうを用いてパッケー
ジ１３と同じか同等の熱膨張係数を有するシームリング
２０を設ける。After that, nickel plating is performed on the plating base layer of the package 13, and silver brazing is used for the upper end surface portion of the second ceramic frame 12 of the package 13 to have a thermal expansion coefficient equal to or equal to that of the package 13. A seam ring 20 is provided.

【００１８】次に再びニッケルメッキを行った後金メッ
キを行い、内部接続電極１４及びシールド電極１５を形
成する。Next, nickel plating is performed again and then gold plating is performed to form the internal connection electrode 14 and the shield electrode 15.

【００１９】図１を見るとわかるように、内部接続電極
１４はパッケージ１３の内側壁の段差２２の上端面（第
１のセラミック枠体１１の上端面）にそれぞれ複数個、
内周端部に至るように形成され、その各辺はパッケージ
１３の各辺（第１のセラミック枠体１１の各辺）に平行
である。すなわち内部接続電極１４は略長方形あるいは
正方形である。As can be seen from FIG. 1, a plurality of internal connection electrodes 14 are provided on the upper end surface of the step 22 on the inner side wall of the package 13 (the upper end surface of the first ceramic frame 11).
It is formed so as to reach the inner peripheral end portion, and each side thereof is parallel to each side of the package 13 (each side of the first ceramic frame body 11). That is, the internal connection electrode 14 is substantially rectangular or square.

【００２０】また、パッケージ１３の内部底面のシール
ド電極非形成部１８ａ，１８ｂの各辺はパッケージ１３
の各辺に平行で、第１のセラミック枠体１１の内周下端
部に至るように設けてある。すなわちシールド電極非形
成部１８ａ，１８ｂも略長方形あるいは正方形であり、
内部接続電極１４とシールド電極非形成部１８ａ，１８
ｂは略直交して形成されたことになる。Further, each side of the shield electrode non-forming portions 18a and 18b on the inner bottom surface of the package 13 is the package 13.
Is provided so as to be parallel to each side of the first ceramic frame 11 and reach the lower end of the inner periphery of the first ceramic frame 11. That is, the shield electrode non-forming portions 18a and 18b are also substantially rectangular or square,
Internal connection electrode 14 and shield electrode non-forming portions 18a, 18
This means that b is formed substantially orthogonally.

【００２１】更にシールド電極非形成部１８ａ，１８ｂ
の第１のセラミック枠体１１の内周下端部の一辺と内部
接続電極１４の一辺が直交するように、パッケージ１３
を上面から見たときに内部接続電極１４のパッケージ１
３の内周側端部とシールド電極非形成部１８ａ，１８ｂ
とを対応させて、かつＳＡＷ素子１７の両側に表出する
シールド電極１５に一つずつシールド電極非形成部１８
ａ，１８ｂを形成している。Further, shield electrode non-forming portions 18a, 18b
Of the first ceramic frame 11 such that one side of the lower end portion of the inner periphery of the first ceramic frame 11 and one side of the internal connection electrode 14 are orthogonal to each other.
Package 1 of the internal connection electrodes 14 when viewed from above
3 of the inner peripheral side and the shield electrode non-forming portions 18a, 18b
And a shield electrode non-forming portion 18 for each shield electrode 15 exposed on both sides of the SAW element 17.
a and 18b are formed.

【００２２】一方、圧電基板上に入、出力用の櫛形電
極、この櫛形電極の両側に反射器及び櫛形電極に電気的
に接続された接続電極を複数形成してＳＡＷ素子１７を
得る。On the other hand, the SAW element 17 is obtained by forming a comb-shaped electrode for input and output on the piezoelectric substrate and a plurality of connection electrodes electrically connected to the reflector and the comb-shaped electrode on both sides of the comb-shaped electrode.

【００２３】次にパッケージ１３の内部底面のシールド
電極１５上にＳＡＷ素子１７を接着層１６を介して固定
する。この時、内部接続電極１４とＳＡＷ素子１７の接
続電極とは略同一面上に存在している。また上面から見
たときに内部接続電極１４とＳＡＷ素子１７の接続電極
の間にシールド電極非形成部１８ａ，１８ｂが存在して
いる。Next, the SAW element 17 is fixed on the shield electrode 15 on the inner bottom surface of the package 13 via the adhesive layer 16. At this time, the internal connection electrode 14 and the connection electrode of the SAW element 17 are present on substantially the same plane. Further, when viewed from above, the shield electrode non-forming portions 18a and 18b exist between the internal connection electrode 14 and the connection electrode of the SAW element 17.

【００２４】次いでパッケージ１３を上面から画像認識
し、パッケージ１３の相対向する側壁上端面それぞれに
おいてシールド電極非形成部１８ａ，１８ｂの第１のセ
ラミック枠体１１の内周下端部の一辺と内部接続電極１
４の一辺の直交点を検出し、この二点を結ぶ直線の中点
を基準とし、パッケージ１３の各種寸法とから内部接続
電極１４とワイヤ１９との接続部を決定する。Then, the package 13 is image-recognized from the upper surface and is internally connected to one side of the inner peripheral lower end of the first ceramic frame body 11 of the shield electrode non-forming portions 18a and 18b on the upper end surfaces of the opposing side walls of the package 13, respectively. Electrode 1
An orthogonal point on one side of 4 is detected, and a connection portion between the internal connection electrode 14 and the wire 19 is determined based on various dimensions of the package 13 with reference to a midpoint of a straight line connecting the two points.

【００２５】また、ＳＡＷ素子１７の表面に設けた櫛形
電極、接続電極などの電極パターンの認識を行い、この
接続電極とワイヤ１９とを接続する位置も決定する。Further, the electrode patterns of the comb-shaped electrodes, connection electrodes, etc. provided on the surface of the SAW element 17 are recognized, and the position at which this connection electrode and the wire 19 are connected is also determined.

【００２６】その後ワイヤ１９の一端を内部接続電極１
４と、他端をＳＡＷ素子１７の接続電極と電気的に接続
する。After that, one end of the wire 19 is connected to the internal connection electrode 1
4 and the other end are electrically connected to the connection electrode of the SAW element 17.

【００２７】次いで、リッド２１をパッケージ１３の上
端面に設けたシームリング２０に溶接することにより、
ＳＡＷ素子１７をパッケージ１３内に封止する。Next, by welding the lid 21 to the seam ring 20 provided on the upper end surface of the package 13,
The SAW element 17 is sealed in the package 13.

【００２８】（実施の形態２）まず、実施の形態１と同
様の内部接続電極１４及びシールド電極１５を有するパ
ッケージ１３及びＳＡＷ素子１７を形成する。(Second Embodiment) First, a package 13 having an internal connection electrode 14 and a shield electrode 15 and a SAW element 17 similar to those of the first embodiment are formed.

【００２９】次に、パッケージ１３のシールド電極１５
上に接着層１６を介してＳＡＷ素子１７を実装する。Next, the shield electrode 15 of the package 13
The SAW element 17 is mounted on the adhesive layer 16 via the adhesive layer 16.

【００３０】次にパッケージ１３を上面から画像認識
し、パッケージ１３の相対向する側壁上端面それぞれに
おいてシールド電極非形成部１８ａ，１８ｂの第１のセ
ラミック枠体１１の内周下端部の一辺と内部接続電極１
４の一辺の直交点を検出し、この二点を結ぶ直線の中点
を基準とし、パッケージ１３の各種寸法とからＳＡＷ素
子１７の実装位置を決定する。Next, the package 13 is image-recognized from the upper surface, and one side and the inside of the lower end portion of the inner periphery of the first ceramic frame 11 of the shield electrode non-forming portions 18a and 18b are respectively formed on the upper end surfaces of the side walls of the package 13 which face each other. Connection electrode 1
An orthogonal point on one side of 4 is detected, and the mounting position of the SAW element 17 is determined from various dimensions of the package 13 with the midpoint of a straight line connecting these two points as a reference.

【００３１】その後、パッケージ１３のシールド電極１
５上に接着層１６を介してＳＡＷ素子１７を実装する。After that, the shield electrode 1 of the package 13
The SAW element 17 is mounted on the substrate 5 via the adhesive layer 16.

【００３２】次いでＳＡＷ素子１７の接続電極と内部接
続電極１４とをワイヤ１９で接続後、パッケージ１３の
上端面に設けたシームリング２０にリッド２１を溶接し
てＳＡＷ素子１７をパッケージ１３内に封止する。Next, after connecting the connection electrode of the SAW element 17 and the internal connection electrode 14 with the wire 19, the lid 21 is welded to the seam ring 20 provided on the upper end surface of the package 13 to seal the SAW element 17 in the package 13. Stop.

【００３３】（実施の形態３）図３は本発明の実施の形
態３におけるパッケージの上面図であり、図１と同番号
を付している部分については、実施の形態１で説明した
通りであるので説明を省略する。(Third Embodiment) FIG. 3 is a top view of a package according to a third embodiment of the present invention, and the portions having the same reference numerals as those in FIG. 1 are as described in the first embodiment. Since it exists, the description is omitted.

【００３４】以下に実施の形態１と異なる点についての
み説明する。Only the points different from the first embodiment will be described below.

【００３５】実施の形態１ではパッケージ１３を上面か
ら見たときに、シールド電極非形成部１８ａ，１８ｂと
内部接続電極１４の第１のセラミック枠体１１の内周側
端部とを対応させているが、本実施の形態においては、
シールド電極非形成部１８ａ，１８ｂと内部接続電極１
４の第１のセラミック枠体１１の内周側端部とを離して
形成している。In the first embodiment, when the package 13 is viewed from above, the shield electrode non-forming portions 18a and 18b and the inner peripheral side end portion of the first ceramic frame 11 of the internal connecting electrode 14 are made to correspond to each other. However, in the present embodiment,
Shield electrode non-forming portions 18a and 18b and internal connection electrode 1
The fourth ceramic frame body 11 is formed so as to be separated from the inner peripheral side end portion of the fourth ceramic frame body 11.

【００３６】従って、パッケージ１３を上面から画像認
識する際、パッケージ１３の相対向する側壁上端面それ
ぞれにおいてシールド電極非形成部１８ａ，１８ｂの第
１のセラミック枠体１１の内周下端部の一辺の延長線と
内部接続電極１４の一辺の延長線の交点を検出し、この
二点を結ぶ直線の中点を基準とし、パッケージ１３の各
種寸法とから内部接続電極１４とワイヤ１９との接続部
を決定する。Therefore, when recognizing the image of the package 13 from the upper surface, one side of the inner peripheral lower end portion of the first ceramic frame body 11 of the shield electrode non-forming portions 18a and 18b is formed on each of the upper end surfaces of the side walls of the package 13 which face each other. The intersection of the extension line and the extension line on one side of the internal connection electrode 14 is detected, and the connection point between the internal connection electrode 14 and the wire 19 is determined based on various dimensions of the package 13 with reference to the midpoint of a straight line connecting these two points. decide.

【００３７】（実施の形態４）図３は本発明の実施の形
態４におけるパッケージの上面図であり、図１と同番号
を付している部分については、実施の形態１，２で説明
した通りであるので説明を省略する。(Embodiment 4) FIG. 3 is a top view of a package according to Embodiment 4 of the present invention, and portions having the same numbers as those in FIG. 1 have been described in Embodiments 1 and 2. The description is omitted because it is the same.

【００３８】以下に実施の形態１，２と異なる点につい
てのみ説明する。Only the points different from the first and second embodiments will be described below.

【００３９】実施の形態１，２ではパッケージ１３を上
面から見たときに、シールド電極非形成部１８ａ，１８
ｂと内部接続電極１４の第１のセラミック枠体１１の内
周側端部とを対応させているが、本実施の形態４におい
ても実施の形態３と同様に、シールド電極非形成部１８
ａ，１８ｂと内部接続電極１４の第１のセラミック枠体
１１の内周側端部とを離して形成している。In the first and second embodiments, when the package 13 is viewed from above, the shield electrode non-forming portions 18a, 18 are formed.
Although b and the inner peripheral side end of the first ceramic frame 11 of the internal connection electrode 14 are made to correspond to each other, the shield electrode non-forming portion 18 is also formed in the fourth embodiment as in the third embodiment.
a, 18b and the inner peripheral side end portion of the first ceramic frame body 11 of the internal connection electrode 14 are formed apart from each other.

【００４０】従って、パッケージ１３を上面から画像認
識し、パッケージ１３の相対向する側壁上端面それぞれ
においてシールド電極非形成部１８ａ，１８ｂの第１の
セラミック枠体１１の内周下端部の一辺の延長線と内部
接続電極１４の一辺の延長線の直交点を検出し、この二
点を結ぶ直線の中点を基準とし、パッケージ１３の各種
寸法とからＳＡＷ素子１７の実装位置を決定する。Therefore, the package 13 is image-recognized from the upper surface, and one side of the inner peripheral lower end of the first ceramic frame body 11 of the shield electrode non-forming portions 18a and 18b is extended on the upper end surfaces of the opposite side walls of the package 13. An orthogonal point of the line and an extension line of one side of the internal connection electrode 14 is detected, and the mounting position of the SAW element 17 is determined from various dimensions of the package 13 with reference to the midpoint of a straight line connecting these two points.

【００４１】（実施の形態５）図４は本発明の実施の形
態５におけるＳＡＷデバイスの断面図であり、図１と同
番号で付している部分については、実施の形態１で説明
した通りであるので説明を省略する。(Fifth Embodiment) FIG. 4 is a cross-sectional view of a SAW device according to a fifth embodiment of the present invention, and the portions denoted by the same reference numerals as those in FIG. 1 are as described in the first embodiment. Therefore, the description is omitted.

【００４２】以下に実施の形態１と異なる点についての
み説明する。Only the points different from the first embodiment will be described below.

【００４３】実施の形態１においては第１のセラミック
枠体１１において内周側面と上端面とのなす角は直角で
あるが、本実施の形態５においては第１のセラミック枠
体１１ａにおいて内周側面と上端面とのなす角が鋭角と
なるようにしている。これで、第１のセラミック枠体１
１ａの上面の段差部の開口よりパッケージ１３の内底面
側を広く構成したことになる。In the first embodiment, the angle between the inner peripheral side surface and the upper end surface of the first ceramic frame body 11 is a right angle, but in the fifth embodiment, the inner peripheral surface of the first ceramic frame body 11a is in the inner periphery. The angle between the side surface and the upper end surface is an acute angle. This completes the first ceramic frame 1
This means that the inner bottom surface side of the package 13 is wider than the opening of the stepped portion on the upper surface of 1a.

【００４４】第１のセラミック枠体１１ａは、セラミッ
クシートの所望の形状に打ち抜くことにより形成する。
従って、必ず内周側面はテーパー状となる。仮に内周側
面と上端面とのなす角が鋭角の場合、パッケージ１３を
上面から画像認識したとき、シールド電極非形成部１８
ａ，１８ｂの第１のセラミック枠体１１ａの内周下端部
の一辺あるいはその延長線と内部接続電極１４の一辺あ
るいはその延長線の直交点を精度良く検知することがで
きる。The first ceramic frame 11a is formed by punching a ceramic sheet into a desired shape.
Therefore, the inner peripheral side surface is always tapered. If the angle between the inner peripheral side surface and the upper end surface is acute, when the package 13 is image-recognized from the upper surface, the shield electrode non-forming portion 18 is formed.
It is possible to accurately detect one side of the lower end portion of the inner periphery of the first ceramic frame body 11a of 18a or 18b or its extension line and one side of the internal connection electrode 14 or the orthogonal point of the extension line.

【００４５】このことは実施の形態２から実施の形態４
のＳＡＷデバイスについても同様のことが言える。This is the case with the second to fourth embodiments.
The same can be said for the SAW device.

【００４６】以下に、本発明のポイントについて説明す
る。The points of the present invention will be described below.

【００４７】（１）実施の形態１，３においては、シー
ルド電極非形成部１８ａ，１８ｂの第１のセラミック枠
体１１の内周下端部の一辺あるいはその延長線と内部接
続電極１４の一辺あるいはその延長線の直交点を画像認
識し、ＳＡＷ素子１７の接続電極と内部接続電極１４と
をワイヤ１９で確実に接続する場合について説明した。(1) In the first and third embodiments, one side of the lower end of the inner periphery of the first ceramic frame 11 of the shield electrode non-forming portions 18a and 18b or its extension and one side of the internal connection electrode 14 or The case has been described in which the orthogonal point of the extension line is image-recognized and the connection electrode of the SAW element 17 and the internal connection electrode 14 are reliably connected by the wire 19.

【００４８】また、実施の形態２，４においては、ＳＡ
Ｗ素子１７をパッケージ１３内に実装する前に、シール
ド電極非形成部１８ａ，１８ｂの第１のセラミック枠体
１１の内周下端部の一辺あるいはその延長線と内部接続
電極１４の一辺あるいはその延長線の直交点を画像認識
し、ＳＡＷ素子１７の実装位置を決定する場合について
説明した。In the second and fourth embodiments, the SA
Before mounting the W element 17 in the package 13, one side of the lower end portion of the inner circumference of the first ceramic frame body 11 of the shield electrode non-forming portions 18a and 18b or its extension line and one side of the internal connection electrode 14 or its extension line. The case where the orthogonal point of the line is image-recognized and the mounting position of the SAW element 17 is determined has been described.

【００４９】このようにシールド電極非形成部１８ａ，
１８ｂを内部接続電極１４と略直交するように形成する
ことにより、ＳＡＷ素子１７の実装位置や内部接続電極
１４とワイヤ１９の接続位置を特定することができる。
もちろん一つのＳＡＷデバイスを製造する際に、ＳＡＷ
素子１７の実装位置と内部接続電極１４とワイヤ１９と
の接続位置を特定するために二度画像認識を行っても構
わない。In this way, the shield electrode non-forming portion 18a,
By forming 18b so as to be substantially orthogonal to the internal connection electrode 14, the mounting position of the SAW element 17 and the connection position of the internal connection electrode 14 and the wire 19 can be specified.
Of course, when manufacturing one SAW device,
Image recognition may be performed twice in order to specify the mounting position of the element 17 and the connecting position of the internal connection electrode 14 and the wire 19.

【００５０】（２）実施の形態１，３のように、内部接
続電極１４とワイヤ１９の接続位置を特定するために画
像認識を行う場合、シールド電極非形成部１８ａ，１８
ｂの幅は画像認識を行うレンズのピントずれの幅よりも
広くすることにより、誤認識を防止することができる。(2) When image recognition is performed to identify the connection position between the internal connection electrode 14 and the wire 19 as in the first and third embodiments, the shield electrode non-forming portions 18a, 18 are formed.
By making the width of b wider than the width of the focus shift of the lens for image recognition, erroneous recognition can be prevented.

【００５１】（３）ＳＡＷ素子１７の上面と内部接続電
極１４とを略同一面上に存在するようにすることによ
り、画像認識の際、焦点がＳＡＷ素子１７の内部接続電
極１４の両方に合うこととなり、シールド電極非形成部
１８ａ，１８ｂの第１のセラミック枠体１１ａの内周下
端部の一辺あるいはその延長線と内部接続電極１４の一
辺あるいはその延長線の直交点と、ＳＡＷ素子１７の接
続電極や櫛形電極などの電極パターンの認識を同じに行
うことができる。(3) By making the upper surface of the SAW element 17 and the internal connection electrode 14 to be substantially on the same plane, the focus is on both the internal connection electrode 14 of the SAW element 17 during image recognition. This means that one side or the extension line of the inner peripheral lower end portion of the first ceramic frame body 11a of the shield electrode non-forming portions 18a, 18b and the orthogonal point of the one side or the extension line of the internal connection electrode 14 and the SAW element 17 are formed. The electrode patterns of the connection electrodes and the comb electrodes can be recognized in the same manner.

【００５２】（４）実施の形態１，２においては、シー
ルド電極非形成部１８ａ，１８ｂの内部接続電極１４の
側端部に接する一辺と、内部接続電極１４のパッケージ
１３の内周側端部に接する一辺の交点を検出するので、
パッケージ１３の内周端部と内部底面端部との境界を確
実に認識できる。一方、実施の形態３，４においてはシ
ールド電極非形成部１８ａ，１８ｂの第１のセラミック
枠体１１ａの内周下端部の一辺と内部接続電極１４の一
辺の直交点を検出するため、例えばパッケージ１３の形
状精度にばらつきがある場合は、実施の形態１，２と比
較するとその位置認識精度は劣ることとなる。(4) In the first and second embodiments, one side of the shield electrode non-forming portions 18a and 18b in contact with the side end portion of the internal connection electrode 14 and the end portion of the internal connection electrode 14 on the inner peripheral side of the package 13. Since it detects the intersection of one side that touches,
The boundary between the inner peripheral edge of the package 13 and the inner bottom edge can be reliably recognized. On the other hand, in the third and fourth embodiments, in order to detect an orthogonal point between one side of the inner peripheral lower end portion of the first ceramic frame body 11a of the shield electrode non-forming portions 18a and 18b and one side of the internal connection electrode 14, for example, a package When the shape accuracy of 13 is different, the position recognition accuracy is inferior as compared with the first and second embodiments.

【００５３】従って、実施の形態１，２のようにパッケ
ージ１３を上面から見たときに、シールド電極非形成部
１８ａ，１８ｂと内部接続電極１４の第１のセラミック
枠体１１の内周側端部とが対応するように、シールド電
極非形成部１８ａ，１８ｂを形成することが望ましい。
またシールド電極非形成部１８ａ，１８ｂを形成する際
多少の位置ずれが生じても影響のないように、同一面上
の内部接続電極１４間の距離よりも、シールド電極非形
成部１８ａ，１８ｂの内部接続電極１４の側端部の辺の
距離を長くしておくことが望ましい。Therefore, when the package 13 is viewed from the upper surface as in the first and second embodiments, the shield electrode non-forming portions 18a and 18b and the internal connection electrode 14 have the inner peripheral side ends of the first ceramic frame body 11. It is desirable to form the shield electrode non-forming portions 18a and 18b so as to correspond to the portions.
Further, in order not to have an influence even if a slight displacement occurs when forming the shield electrode non-forming portions 18a and 18b, the shield electrode non-forming portions 18a and 18b should be formed more than the distance between the internal connection electrodes 14 on the same surface. It is desirable to increase the distance between the side edges of the internal connection electrodes 14.

【００５４】（５）上記各実施の形態においては、シー
ルド電極非形成部１８ａ，１８ｂをパッケージ１３の段
差２２に設けた内部接続電極１４側の両端部に設けてい
る。一方の内部接続電極１４側にシールド電極非形成部
１８ａ，１８ｂを二つ設けて、シールド電極非形成部１
８ａ，１８ｂの第１のセラミック枠体１１ａの内周下端
部の一辺あるいはその延長線と内部接続電極１４の一辺
あるいはその延長線の直交点を認識し、位置決めを行う
ことができるが、より精度良く認識するためには、シー
ルド電極非形成部１８ａ，１８ｂをパッケージ１３の底
部のＳＡＷ素子１７の両側に表出するシールド電極１５
には、両者の距離ができるだけ長くなるように形成する
ことが望ましい。(5) In each of the above-described embodiments, the shield electrode non-forming portions 18a and 18b are provided at both ends on the internal connection electrode 14 side provided on the step 22 of the package 13. Two shield electrode non-forming portions 18a and 18b are provided on one internal connection electrode 14 side, and the shield electrode non-forming portion 1 is formed.
It is possible to recognize the orthogonal point of one side or the extension line of the inner peripheral lower end portion of the first ceramic frame body 11a of 8a, 18b and the one side or the extension line of the internal connection electrode 14, and the positioning can be performed. In order to recognize well, the shield electrode 15 where the shield electrode non-forming portions 18a and 18b are exposed on both sides of the SAW element 17 at the bottom of the package 13 is shown.
Therefore, it is desirable to form them so that the distance between them is as long as possible.

【００５５】（６）シールド電極１５と内部接続電極１
４と同じ材料を用いて形成していたため、従来パッケー
ジ１３を上面から見た場合、パッケージ１３の内周端部
と内部底面端部との境界認識が非常に困難であった。従
ってＳＡＷ素子１７の実装精度を悪化させないように、
パッケージ１３の内部を必要以上に大きくしてＳＡＷ１
７を実装していた。しかしながら本発明においては、パ
ッケージ１３の内周端部と底面端部との境界認識がで
き、ＳＡＷ素子１７の実装位置を決定できるので、パッ
ケージ１３の内部の大きさをＳＡＷ素子１７を実装でき
る必要最小限にすることができる。従って、ＳＡＷデバ
イスの小型化を行うことができる。(6) Shield electrode 15 and internal connection electrode 1
Since the conventional package 13 is formed by using the same material as that of No. 4, it is very difficult to recognize the boundary between the inner peripheral edge portion and the inner bottom edge portion of the package 13 when the conventional package 13 is viewed from above. Therefore, in order not to deteriorate the mounting accuracy of the SAW element 17,
SAW1 by making the inside of the package 13 larger than necessary
I was implementing 7. However, in the present invention, the boundary between the inner peripheral edge and the bottom edge of the package 13 can be recognized, and the mounting position of the SAW element 17 can be determined. Therefore, the size of the inside of the package 13 needs to be able to mount the SAW element 17. Can be minimized. Therefore, the SAW device can be downsized.

【００５６】（７）シールド電極１５はできるだけ大き
い方がそのシールド効果も大きい。シールド電極非形成
部１８ａ，１８ｂは三つ以上形成しても構わないが、二
つ形成すればＳＡＷ素子１７の実装位置を決定できるの
で、シールド電極非形成部１８ａ，１８ｂの数は二つ、
その大きさは必要最小限とすることが望ましい。(7) The larger the shield electrode 15 is, the larger the shield effect is. Three or more shield electrode non-forming portions 18a and 18b may be formed, but since the mounting position of the SAW element 17 can be determined by forming two, the number of shield electrode non-forming portions 18a and 18b is two.
It is desirable that the size be the minimum necessary.

【００５７】（８）上記実施の形態においてはＳＡＷデ
バイスを例に説明したが、パッケージの上端面と底面に
電極を設けて、内部に素子を実装する電子部品において
は同様の効果が得られるものである。(8) Although the SAW device has been described as an example in the above embodiment, the same effect can be obtained in an electronic component in which electrodes are provided on the upper and lower surfaces of the package and the elements are mounted inside. Is.

【００５８】[0058]

【発明の効果】以上本発明によると、内部接続電極のワ
イヤとの接続位置を精度良く決定できるので素子と内部
接続電極とを確実に接続することができる。As described above, according to the present invention, since the connection position of the internal connection electrode with the wire can be accurately determined, the element and the internal connection electrode can be reliably connected.

【００５９】また、素子のパッケージへの実装精度も向
上させることができるのでパッケージの内部の大きさを
必要最小限にすることができ、電子部品の小型化を図る
ことができる。Further, since the mounting accuracy of the device in the package can be improved, the internal size of the package can be minimized and the electronic component can be miniaturized.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の実施の形態１，２におけるリッドで封
止前のＳＡＷデバイスの上面図FIG. 1 is a top view of a SAW device before being sealed with a lid according to first and second embodiments of the present invention.

【図２】図１に示すＳＡＷデバイスのＡ−Ｂ断面図2 is a cross-sectional view taken along the line AB of the SAW device shown in FIG.

【図３】本発明の実施の形態３，４におけるリッドで封
止前のＳＡＷデバイスの上面図FIG. 3 is a top view of a SAW device before being sealed with a lid in Embodiments 3 and 4 of the present invention.

【図４】本発明の実施の形態５におけるＳＡＷデバイス
の断面図FIG. 4 is a sectional view of a SAW device according to a fifth embodiment of the present invention.

【図５】従来のＳＡＷデバイスのリッドで封止前の上面
図FIG. 5 is a top view of a conventional SAW device before being sealed with a lid.

【図６】図５に示すＳＡＷデバイスの断面図6 is a cross-sectional view of the SAW device shown in FIG.

【符号の説明】[Explanation of symbols]

１０ セラミック基板 １１ 第１のセラミック枠体 １１ａ 第１のセラミック枠体 １２ 第２のセラミック枠体 １３ パッケージ １４ 内部接続電極 １５ シールド電極 １６ 接着層 １７ ＳＡＷ素子 １８ａ シールド電極非形成部 １８ｂ シールド電極非形成部 １９ ワイヤ ２０ シームリング ２１ リッド ２２ 段差 10 Ceramic substrate 11 First ceramic frame 11a First ceramic frame 12 Second ceramic frame 13 packages 14 Internal connection electrode 15 Shield electrode 16 Adhesive layer 17 SAW element 18a Shield electrode non-forming part 18b Shield electrode non-formation part 19 wires 20 seam rings 21 lid 22 steps

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平８−293756（ＪＰ，Ａ) 特開 平６−104687（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 H01L 23/12 H03H 3/08 H03H 9/25 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-8-293756 (JP, A) JP-A-6-104687 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 21/60 H01L 23/12 H03H 3/08 H03H 9/25

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 相対向する壁側に段差を有し、この段差
の上端面に複数の内部接続電極を有し、内部底面にシー
ルド電極と、上面から見た時前記内部接続電極の一辺あ
るいはその延長線とその一辺が直交するようなシールド
電極非形成部を有するパッケージに素子を実装する第１
の工程と、次に前記内部接続電極の一辺あるいはその延
長線と前記シールド電極非形成部の一辺の交点を少なく
とも二点検出し、前記素子と前記内部接続電極とを接続
するワイヤの接続位置を決定する第２の工程と、次いで
前記素子と前記内部接続電極とをワイヤで接続する第３
の工程と、その後前記パッケージをリッドで封止する第
４の工程とを備え、前記段差間の幅は、前記内部接続電
極側より内部底面側を広くした電子部品の製造方法。1. A step is provided on opposite wall sides, a plurality of internal connection electrodes are provided on an upper end surface of the step, a shield electrode is provided on an internal bottom surface, and one side of the internal connection electrode when viewed from above or First, an element is mounted in a package having a shield electrode non-formation portion whose one side is orthogonal to the extension line.
Step, and then at least two intersections of one side of the internal connection electrode or its extension and one side of the shield electrode non-forming part are inspected to determine the connection position of the wire connecting the element and the internal connection electrode. And a third step of connecting the element and the internal connection electrode with a wire.
And a fourth step of thereafter sealing the package with a lid , wherein the width between the steps is equal to the internal connection voltage.
A method for manufacturing electronic components in which the inner bottom surface side is wider than the pole side . 【請求項２】 相対向する壁側に段差を有し、この段差
の上端面に複数の内部接続電極を有し、内部底面にシー
ルド電極と、上面から見た時前記内部接続電極の一辺あ
るいはその延長線とその一辺が直交するようなシールド
電極非形成部を有するパッケージに素子を実装する第１
の工程と、次いで前記素子と前記内部接続電極とをワイ
ヤで接続する第２の工程と、その後前記パッケージをリ
ッドで封止する第３の工程とを備え、前記段差間の幅
は、前記内部接続電極側より内部底面側を広くし、前記
第１の工程において、前記内部接続電極の一辺あるいは
その延長線と前記シールド電極非形成部の一辺の交点を
少なくとも二点検出し、前記素子の実装位置を決定する
電子部品の製造方法。2. A step is provided on opposite wall sides, a plurality of internal connection electrodes are provided on an upper end surface of the step, a shield electrode is provided on an internal bottom surface, and one side of the internal connection electrode when viewed from above or First, an element is mounted in a package having a shield electrode non-formation portion whose one side is orthogonal to the extension line.
Comprising of a step, then a second step of connecting the internal connection electrode and the element wire, and a third step of subsequently sealing the package lid, a width between the stepped
Makes the inner bottom surface side wider than the inner connection electrode side, and in the first step, at least two intersections of one side of the inner connection electrode or its extension and one side of the shield electrode non-forming portion are inspected, A method of manufacturing an electronic component for determining a mounting position of an element. 【請求項３】 相対向する壁側に段差を有し、この段差
の上端面に複数の内部接続電極を有し、内部底面にシー
ルド電極と、上面から見た時前記内部接続電極の一辺あ
るいはその延長線とその一辺が直交するようなシールド
電極非形成部を有するパッケージに素子を実装する第１
の工程と、次に前記素子と前記内部接続電極とをワイヤ
で接続する第２の工程と、その後前記パッケージをリッ
ドで封止する第３の工程とを備え、前記段差間の幅は、
前記内部接続電極側より内部底面側を広くし、前記第１
及び第２の工程において、前記内部接続電極の一辺ある
いはその延長線と前記シールド電極非形成部の一辺の交
点を少なくとも二点検出し、前記素子の実装位置及び前
記ワイヤの接続位置を決定する電子部品の製造方法。3. A step is provided on opposite wall sides, a plurality of internal connection electrodes are provided on an upper end surface of the step, a shield electrode is provided on an internal bottom surface, and one side of the internal connection electrode when viewed from above or First, an element is mounted in a package having a shield electrode non-formation portion whose one side is orthogonal to the extension line.
And a second step of connecting the element and the internal connection electrode with a wire, and then a third step of sealing the package with a lid, the width between the steps is
The inner bottom surface side is wider than the inner connection electrode side,
In the second step, at least two intersections of one side of the internal connection electrode or its extension and one side of the shield electrode non-forming portion are inspected to determine the mounting position of the element and the connection position of the wire. Manufacturing method.
JP2000397702A 2000-12-27 2000-12-27 Electronic component manufacturing method Expired - Fee Related JP3438721B2 (en)

Priority Applications (1)

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Applications Claiming Priority (1)

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JP2000397702A JP3438721B2 (en) 2000-12-27 2000-12-27 Electronic component manufacturing method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP27420599A Division JP3216638B2 (en) 1999-09-28 1999-09-28 Electronic component and method of manufacturing the same

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Publication Number Publication Date
JP2001185573A JP2001185573A (en) 2001-07-06
JP3438721B2 true JP3438721B2 (en) 2003-08-18

Family

ID=18862799

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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