JP4661568B2 - Electronic component and method for manufacturing electronic component - Google Patents

Description

  The present invention relates to an electronic component and a method for manufacturing the electronic component, and more particularly to an electronic component in which an element is accommodated in a package and a method for manufacturing the electronic component.

As one of electronic components, a surface acoustic wave device in which a surface acoustic wave element is disposed on a bottom surface in a package via a metallization layer, and an electrode of the surface acoustic wave element and an electrode in the package are connected by wire bonding. is there.
In such a surface acoustic wave device, conventionally, a non-metalized portion is formed on the bottom surface in the package between the surface acoustic wave element and the electrode in the package, so that the accuracy of the connection position in wire bonding can be improved. The structure which can be performed is known (for example, refer patent documents 1-4).

Japanese Patent No. 3372605 (FIG. 1) Japanese Patent No. 3154640 (FIGS. 1 to 8) Japanese Patent No. 3216638 (FIG. 1) Japanese Patent No. 3301419 (FIG. 1)

  In the conventional examples described in Patent Documents 1 to 4, a nonmetallized portion is formed in the metallized layer formed on the bottom surface in the package. For this reason, electromagnetic waves or the like easily enter the package from the non-metallized portion, and the stable operation of the surface acoustic wave element may be hindered by the electromagnetic waves. That is, in the prior art examples described in Patent Documents 1 to 4, there is an unsolved problem that it is difficult to improve so-called noise resistance against noise such as electromagnetic waves received from the outside.

  The present invention has been made paying attention to this unsolved problem, and an object thereof is to provide an electronic component and a method of manufacturing the electronic component that can improve noise resistance.

  According to a first aspect of the present invention, there is provided an electronic component in which a cavity is formed by providing an annular protrusion on a substrate and a metallized layer is formed on a bottom surface in the cavity, and on the bottom surface in the cavity. An element disposed through the metallized layer and accommodated in the cavity, and the metallized layer has a window portion in contact with the protrusion in plan view at each position facing the element. A metal layer different from the metallized layer is formed in the window portion.

  In the first aspect of the invention, a metallized layer is formed on the bottom surface in the cavity, and the metallized layer is formed with a window portion in contact with the ridge in plan view at each position facing the element. Has been. Further, a metal layer different from the metallized layer is formed in the window portion.

  Thereby, while being able to make it easy to grasp | ascertain the boundary part of a metal layer and a protrusion, the electromagnetic wave which penetrates into a package from a window part can be reduced with the metal layer formed in the window part. Therefore, it is possible to improve noise resistance in the electronic component.

  According to a second invention, in the first invention, the window portion is covered with the metal layer.

  In the second aspect of the invention, since the window portion is covered with the metal layer, the electromagnetic wave entering the package from the window portion can be further reduced, and the noise resistance of the electronic component can be further improved.

  In a third aspect based on the second aspect, the metallized layer is composed of a plated layer formed by plating a base metal layer serving as a base of the metallized layer, and the window portion includes It is formed in the metallized layer so that a base metal layer is exposed, and the metal layer is composed of the base metal layer exposed from the window portion.

  In the third aspect of the invention, the window portion formed in the metallized layer is covered with the base metal layer that is the base of the metallized layer. That is, the metal layer covering the window portion can be constituted by the base metal layer of the metallized layer constituted by the plating layer.

  According to a fourth aspect of the present invention, there is provided a method of manufacturing an electronic component, wherein a cavity is formed by laminating an annular substrate on a substrate and a metallized layer is formed on a bottom surface in the cavity; A method of manufacturing an electronic component comprising an element disposed on the bottom surface via the metallization layer and housed in the cavity, wherein a base metal layer serving as a base for plating is formed on the substrate; Forming a light-transmitting and electrically insulating insulating layer on the base metal layer at each position facing the element when the element is placed on the substrate; and A step of laminating an annular substrate so that the annular substrate covers a part of each of the insulating layers, and an electroplating on the base metal layer on which the insulating layer is formed. Characterized in that it comprises a step of forming a's layer.

  In the fourth aspect of the invention, an insulating layer is formed on the base metal layer formed on the substrate, and then a metallized layer is formed on the base metal layer by electroplating.

  As a result, it is possible to form a window part in which the base metal layer is exposed through the insulating layer in the metallized layer, and to manufacture an electronic component having a configuration in which the inside of the window part is covered with the base metal layer. Become. Therefore, it is possible to manufacture an electronic component that can improve noise resistance.

An embodiment of the present invention will be described with reference to the drawings, taking a surface acoustic wave device as one of electronic components as an example.
The surface acoustic wave device 1 according to the present embodiment includes a package 3 and a seal as shown in FIG. 1A, which is a front view, and FIG. 1B, which is a cross-sectional view along AA in FIG. A ring 5, a lid 7, and a surface acoustic wave element 9 accommodated in the package 3 are provided.

  As shown in FIG. 1B, the package 3 includes a substrate 11, a first frame substrate 13 stacked on the substrate 11, and a second frame substrate 15 stacked on the first frame substrate 13. . Each of the substrate 11, the first frame substrate 13 and the second frame substrate 15 is composed of a ceramic substrate whose main component is aluminum oxide, silicon oxide or the like.

  In the package 3 having the above-described configuration, the cavity 17 is formed by stacking the first frame substrate 13 and the second frame substrate 15 on the substrate 11. The surface acoustic wave element 9 is disposed on the bottom surface 19 in the cavity 17 as shown in FIG.

  As shown in FIG. 1B, the inner side surface of the first frame substrate 13 as viewed in this figure is located further inside than the inner side surface of the second frame substrate 15. As a result, a middle step 21 having a surface extending toward the surface acoustic wave element 9 is formed in the cavity 17 between the substrate 11 and the second frame substrate 15.

  As shown in FIG. 1 (c), which is a plan view showing a state in which the lid 7 in the surface acoustic wave device 1 is omitted, the middle stage portion 21 is opposed to the surface acoustic wave element 9 sandwiched in the vertical direction as seen in this figure. It is formed at each position. An inner electrode 23 that is a connection destination of various electrodes, which will be described later, of the surface acoustic wave element 9 is formed in the middle step portion 21.

  Further, as shown in FIG. 1C, a metallized layer 25 is formed on the bottom surface 19 in the cavity 17 by electroplating. The surface acoustic wave element 9 is disposed on the bottom surface 19 in the cavity 17 via the metallized layer 25.

  Further, in the metallized layer 25, the inner surface of the cavity 17 is crossed with the direction in which the two middle step portions 21 face each other across the surface acoustic wave element 9, that is, in the left-right direction as viewed in FIG. A window 27 is provided between the surface acoustic wave element 9 and the surface acoustic wave element 9. From this window portion 27, a base metal layer 26 mainly containing a refractory metal such as tungsten, which is the base of the metallized layer 25 by electroplating, is exposed. That is, the metallized layer 25 and the window 27 are distinguished from each other by the base metal layer 26 having a color different from a metal color such as gold or silver which the metallized layer 25 has.

  The window portion 27 is formed at each position facing the surface acoustic wave element 9 and is in contact with the inner surface of the cavity 17. In FIG. 1C, the internal electrode 23, the metallized layer 25, and the base metal layer 26 are hatched for easy understanding of the configuration.

Here, the detail of each said structure is demonstrated.
As shown in FIG. 2 which is a plan view, the surface acoustic wave element 9 has a configuration in which an IDT electrode 29 and two reflector electrodes 31 are formed on an element substrate 28 formed of a piezoelectric material such as quartz. is doing. In FIG. 2, the IDT electrode 29 and the reflector electrode 31 are hatched for easy understanding of the configuration.

  The IDT electrode 29 excites a surface acoustic wave to the surface acoustic wave element 9 when an electric signal is input. The two reflector electrodes 31 are formed so as to sandwich the IDT electrode 29 from the outside, and reflect the surface acoustic wave excited by the IDT electrode 29. In the surface acoustic wave element 9, the direction in which the two reflector electrodes 31 sandwich the IDT electrode 29 is the propagation direction of the surface acoustic wave.

  That is, the surface acoustic wave element 9 is disposed on the bottom surface 19 so that the two window portions 27 formed on the bottom surface 19 in the cavity 17 sandwich the surface acoustic wave element 9 in the propagation direction of the surface acoustic wave. Yes. Each IDT electrode 29 of the surface acoustic wave element 9 is connected to the internal electrode 23 in the cavity 17 by a wire (not shown) by a wire bonding technique or the like.

  As shown in FIG. 3A which is a plan view of the substrate 11, the metallized layer 25 having gold as a main component is formed on the first surface 33 on the bottom surface 19 side of the cavity 17. The metallized layer 25 is provided with two windows 27 that expose the underlying metal layer 26. On the second surface 35 opposite to the first surface 33 of the substrate 11, as shown in FIG. 3B, which is a bottom view, external electrodes 37 connected to a wiring pattern such as a circuit substrate (not shown) are formed. Has been. In FIG. 3, the metallized layer 25, the base metal layer 26, and the external electrode 37 are hatched for easy understanding of the configuration.

  The external electrode 37 is input based on the ground electrodes 37a, 37b, 37e, and 37f connected to the ground on the circuit board and the wiring pattern of the circuit board, and is generated based on the input electrical signal. Input / output electrodes 37c and 37d for outputting the generated surface acoustic wave signal. Note that the metallized layer 25 is electrically connected to the ground electrodes 37a, 37b, 37e, and 37f through via holes, castellations, and the like (not shown).

  As shown in FIG. 4A, which is a plan view, the first frame substrate 13 is constituted by an annular substrate in which an opening 39 penetrating in the thickness direction is formed. The internal electrode 23 formed on the first frame substrate 13 is mainly composed of gold or the like, and the IDT internal electrode 23c to which each of the IDT electrodes 29 of the surface acoustic wave element 9 is connected. And 23d, and ground internal electrodes 23a and 23b electrically connected to the ground electrodes 37a, 37b, 37e and 37f of the substrate 11 through via holes or castellations (not shown). The IDT internal electrodes 23c and 23d are provided at positions facing each other in the vertical direction across the opening 39 as viewed in FIG. 4A, and are respectively connected to the ground internal electrodes 23a and 23b via the inter-electrode portion 40. It is sandwiched in the direction.

  The IDT internal electrodes 23c and 23d are electrically connected to the input / output electrodes 37c and 37d of the substrate 11 via via holes or castellations (not shown). In FIG. 4, the ground internal electrodes 23 a and 23 b and the IDT internal electrodes 23 c and 23 d are hatched for easy understanding. In the present embodiment, each reflector electrode 31 of the surface acoustic wave element 9 is configured not to be connected to the internal electrode 23. However, each reflector electrode 31 is connected to each IDT internal electrode 23c and 23d or each ground internal. You may make it connect to the electrodes 23a and 23b.

  As shown in FIG. 4B, which is a plan view of the first frame substrate 13 in a state where the first frame substrate 13 is stacked on the substrate 11, a part of the window portion 27 of the substrate 11 is opened. The size exposed from the inside of the portion 39 is set.

  As shown in FIG. 5A, which is a plan view, the second frame substrate 15 is formed of an annular substrate in which an opening 41 penetrating in the thickness direction is formed. The opening 41 of the second frame substrate 15 is formed in the first frame substrate as shown in FIG. 5B, which is a plan view in a state where the second frame substrate 15 is stacked on the first frame substrate 13. The ground internal electrodes 23 a and 23 b and the IDT internal electrodes 23 c and 23 d are partially exposed to the inside of the opening 41.

  The second frame substrate 15 is provided with a metallized layer 43 shown by hatching in FIGS. 5 (a) and 5 (b). The metallized layer 43 is mainly composed of gold or the like.

The seal ring 5 is formed of an alloy mainly composed of iron and nickel, and is formed in an annular shape with an opening 45 penetrating in the thickness direction as shown in FIG. 6 which is a plan view.
The lid 7 is made of metal and can cover the inner periphery of the opening 45 of the seal ring 5 while being laminated on the seal ring 5 as shown in FIG. 7 which is a plan view. The contour has a size that fits inside the outer periphery of the seal ring 5.

Here, the flow of manufacturing the surface acoustic wave device 1 having the above-described configuration will be described.
In the manufacture of the surface acoustic wave device 1, first, a metal layer serving as a base for electroplating is formed on each of the substrate 11, the first frame substrate 13, and the second frame substrate 15.

  In the substrate 11, as shown in FIG. 8A, the base metal layer 26 mainly composed of tungsten is formed on the first surface 33. At this time, along with the formation of the base metal layer 26 on the first surface 33, a metal layer containing tungsten as a main component is also formed on the second surface 35 where the external electrodes 37 are formed. In FIG. 8, the base metal layer 26 is shown hatched.

Then, as shown in FIG. 8B, sputtering is performed on the base metal layer 26 on the first surface 33 with a material having light transmissivity and electrical insulation, such as SiO ₂ , at a site where the window 27 is formed. The window portion 27 is formed by forming an insulating layer using technology or the like.

Further, in the first frame substrate 13, a base metal layer 231 is formed in each part where the ground internal electrodes 23a and 23b and the IDT internal electrodes 23c and 23d are formed as shown by hatching in FIG. These base metal layers 231 contain tungsten as a main component.
Further, in the second frame substrate 15, a base metal layer 431 containing tungsten as a main component is formed at a portion where the metallized layer 43 is to be formed as shown by hatching in FIG. 10.

Next, the substrate 11, the first frame substrate 13 and the second frame substrate 15 on which the respective base metal layers 26, 231 and 431 are formed are fired in a stacked state as shown in FIG.
Next, the fired substrate 11, first frame substrate 13 and second frame substrate 15 are electroplated, and as shown in FIG. 11B, metallized layer 25, metallized layer 43, ground internal electrodes 23a and 23b, and The IDT internal electrodes 23c and 23d are formed, and the package 3 is completed. In FIG. 11B, the metallized layer 25, the metallized layer 43, the ground internal electrodes 23a and 23b, and the IDT internal electrodes 23c and 23d are respectively connected to the underlying metal layers 26 and 231 shown in FIG. And 431 are shown in different hatching directions.

Here, as described above, since each window 27 is composed of an insulating layer formed of SiO ₂ , the metallized layer 25 is not formed on the window 27 even if electroplating is performed. That is, the base metal layer 26 shown by hatching in the window portion 27 in FIG. 11B is exposed from the window portion 27.

  Next, as shown in FIG. 12, the seal ring 5 is disposed on the completed package 3. At this time, the reel ring 5 is brazed to the second frame substrate 15 of the package 3 by silver brazing or the like. In FIG. 12, a portion exhibiting a metallic color such as gold or silver and a portion where the base metal layer 26 is exposed are hatched.

  Next, the surface acoustic wave element 9 is placed in the cavity 17 of the package 3 to which the seal ring 5 is brazed. At this time, the center position of the bottom surface 19 in the cavity 17 is grasped by utilizing an image recognition device equipped with an image sensor such as a CCD (Charge Coupled Device), and the surface acoustic wave element 9 is based on the center position of the bottom surface 19. Is placed in an appropriate position.

Here, the grasp of the center position of the bottom surface 19 using the image recognition device will be described.
The image recognition device used in the present embodiment is a diagram showing an image captured through an image sensor, and as shown in FIG. Two crossing sight lines X1 and X2 and two cross sight lines Y1 and Y2 vertically provided in the vertical direction are provided. In FIG. 13 (a), a portion exhibiting a metallic color such as gold or silver and a portion where the base metal layer 26 is exposed are hatched.

  The sight lines X1 and X2 are parallel to each other with a space therebetween, and are provided so as to cross the respective window portions 27 in the left-right direction as viewed in FIG. The sight lines Y1 and Y2 are parallel to each other with a space therebetween, and are provided so as to vertically cut each inter-electrode portion 40 in the vertical direction as viewed in FIG. This image recognition apparatus is configured such that the boundary between the metal color such as gold or silver and the color of the base metal layer 26 or the ceramic substrate is recognized as a recognition point on each of the sight lines X1 and X2 and Y1 and Y2. Has been.

That is, on the line of sight X1 and X2, the boundary between the seal ring 5 and the underlying metal layer 26 exposed from the window 27 is recognized as the recognition points X1 ₁ and X1 ₂ and X2 ₁ and X2 ₂ . On the line of sights Y1 and Y2, the boundaries between the interelectrode part 40 and the metallized layer 25 are recognized as recognition points Y1 ₁ and Y1 ₂ and Y2 ₁ and Y2 ₂ .

When these recognition points X1 ₁ , X1 ₂ , X2 ₁ , X2 ₂ , Y1 ₁ , Y1 ₂ , Y2 _1, and Y2 ₂ are recognized, an arithmetic processing unit (not shown) performs arithmetic processing in FIG. The center position Dp of the bottom surface 19 is calculated as shown in FIG. 13B, which is an enlarged view of the inside of the opening 45 of the seal ring 5 shown in FIG. Specifically, first, the midpoint X1c between the recognition points X1 ₁ and X1 ₂ , the midpoint X2c between the recognition points X2 ₁ and X2 _2, and the midpoint Y1c between the recognition points Y1 ₁ and Y1 ₂ are recognized. A midpoint Y2c between the points Y2 ₁ and Y2 ₂ is calculated. Then, the intersection point between the line segment connecting the midpoints X1c and X2c and the line segment connecting the midpoints Y1c and Y2c is calculated as the center position Dp.

  Based on the center position Dp of the bottom surface 19 thus grasped, the placement position of the surface acoustic wave element 9 is determined. After the surface acoustic wave element 9 is placed and disposed on the bottom surface 19 in the cavity 17, each IDT electrode 29 of the surface acoustic wave element 9 is electrically connected to the internal electrode 23.

  Next, when the lid 7 is placed on the seal ring 5 and the lid 7 and the seal ring 5 are welded by seam welding, the production of the surface acoustic wave device 1 shown in FIG. The lid 7 is electrically connected to the ground electrodes 37a, 37b, 37e and 37f of the substrate 11 via via holes or castellations (not shown). In other words, the surface acoustic wave element 9 is shielded from noise such as electromagnetic waves from the outside by the lid 7 and the metallized layer 25 that are grounded, and the operation is stabilized.

  In the present embodiment, each of the first frame substrate 13 and the second frame substrate 15 corresponds to an annular substrate as an annular protrusion.

  In the surface acoustic wave device 1 of the present embodiment, a metallized layer 25 is formed on the bottom surface 19 in the cavity 17, and a base metal layer 26 having a color different from that of the metallized layer 25 is exposed on the metallized layer 25. A window portion 27 is formed. The window 27 is located at each position where the internal electrode 23 faces the surface acoustic wave element 9 in a direction crossing the direction in which the surface acoustic wave element 9 is sandwiched, and a part of the window 27 is in plan view. It is formed so as to overlap the one-frame substrate 13. Thereby, the base metal layer 26 exposed from the window 27 is clearly identified from the first frame substrate 13, the second frame substrate 15, and the seal ring 5. The boundary between the first frame substrate 13, the second frame substrate 15 or the seal ring 5 and the base metal layer 26 exposed from the window portion 27 can be easily recognized by the image recognition device, and the bottom surface in a plan view The center position of 19 can be easily grasped.

  Here, let us consider a case where the arrangement position of the seal ring 5 with respect to the package 3 is shifted to the left as viewed in this figure as shown in FIG. The bottom surface 19 of the cavity 17 seen in FIG. 14 (a) has a size surrounded by the seal ring 5, the first frame substrate 13 and the second frame substrate 15, and is larger than the case shown in FIG. 13 (a). Get smaller.

  Even in such a case, the surface acoustic wave device 1 of the present embodiment can easily grasp the center position Dp of the bottom surface 19 as shown in FIG. That is, even if the size of the bottom surface 19 in plan view varies, the center position Dp according to the size of the bottom surface 19 can be calculated.

  However, the arrangement position of the seal ring 5 with respect to the package 3 may be shifted not only in the left direction shown in FIG. 14A but also in the right direction. That is, the arrangement position of the seal ring 5 with respect to the package 3 has σ variation in the left direction and σ in the right direction as shown in FIG. 15 which is a BB cross-sectional view in FIG. There will be variations.

  At this time, when the window portion 27 is not formed in the surface acoustic wave device 1, that is, when the center position of the bottom surface 19 is grasped using only the line of sights Y1 and Y2 in the image recognition device used in the present embodiment. The position where the seal ring 5 having the variation of σ in the left-right direction is not grasped. Therefore, in this case, it is necessary to reduce the size of the surface acoustic wave element 9 accommodated in the package 3 by at least twice the variation σ.

  On the other hand, in the surface acoustic wave device 1 of the present embodiment, the center position Dp corresponding to the size of the bottom surface 19 in a plan view can be grasped, so that the size of the surface acoustic wave element 9 is reduced by the variation σ. do it. Therefore, the size of the package 3 with respect to the size of the surface acoustic wave element 9 can be reduced. In other words, the size of the surface acoustic wave element 9 with respect to the package 3 can be increased. This is extremely preferable for the surface acoustic wave device 1. That is, the surface acoustic wave element 9 exhibits better characteristics as the dimension in the direction in which the surface acoustic wave propagates increases.

  Further, in the surface acoustic wave device 1 of the present embodiment, since the inside of the window portion 27 is covered with the base metal layer 26, electromagnetic waves entering from the window portion 27 can be suppressed extremely low, and noise resistance can be improved. Is possible.

  In the present embodiment, the window 27 is formed by providing an insulating layer on the base metal layer 26. However, the present invention is not limited to this. That is, as shown in FIG. 16A, which shows another example of the present embodiment, a window portion 27 is formed in the base metal layer 26 formed on the substrate 11, and the first surface of the substrate 11 is formed from the window portion 27. A metal layer 261 isolated from the base metal layer 26 is formed in an island shape in the window 27. An arbitrary metal material can be used for the metal layer 261, but the same material as that of the base metal layer 26 can be used. In addition to the formation of the base metal layer 26, the metal layer 261 can be formed in the same process. It is preferable because it exists.

When the first frame substrate 13 and the second frame substrate 15 are laminated on the substrate 11 on which the base metal layer 26 and the metal layer 261 are formed and then baked and electroplated, the package shown in FIG. 3 can be manufactured. That is, since the metal layer 261 is isolated from the base metal layer 26, a plating layer is not formed. Therefore, the package 3 in which the metal layer 261 is exposed from the window portion 27 can be obtained. As a result, the step of forming an insulating layer such as SiO _{2 on} the base metal layer 26 can be omitted, and the manufacturing method can be simplified and the cost can be reduced.

The figure explaining the structure of the surface acoustic wave apparatus in embodiment of this invention. The top view of the surface acoustic wave element of the surface acoustic wave apparatus in embodiment of this invention. The figure explaining the structure of the board | substrate of the surface acoustic wave apparatus in embodiment of this invention. The figure explaining the structure of the 1st frame board | substrate of the surface acoustic wave apparatus in embodiment of this invention. The figure explaining the structure of the 2nd frame board | substrate of the surface acoustic wave apparatus in embodiment of this invention. The top view of the seal ring of the surface acoustic wave apparatus in the embodiment of the present invention. The figure explaining the lid of the surface acoustic wave apparatus in the embodiment of the present invention. The figure explaining the flow of manufacture of the board | substrate of the surface acoustic wave apparatus in embodiment of this invention. The figure explaining the base metal layer of the 1st frame board | substrate of the surface acoustic wave apparatus in embodiment of this invention. The figure explaining the base metal layer of the 2nd frame board | substrate of the surface acoustic wave apparatus in embodiment of this invention. The figure explaining the flow of manufacture of the package of the surface acoustic wave apparatus in embodiment of this invention. The top view in the state where the seal ring was arranged in the package of the surface acoustic wave device in the embodiment of the present invention. The figure explaining the center position of the bottom face of the surface acoustic wave apparatus in the embodiment of the present invention. The figure explaining the center position of the bottom face when the seal ring of the surface acoustic wave device in the embodiment of the present invention is displaced. The figure explaining the effect of the surface acoustic wave apparatus in embodiment of this invention. The figure explaining the other example of the surface acoustic wave apparatus in embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Surface acoustic wave apparatus, 3 ... Package, 9 ... Surface acoustic wave element, 11 ... Board | substrate, 13 ... 1st frame board | substrate, 15 ... 2nd frame board | substrate, 17 ... Cavity, 19 ... Bottom face, 23 ... Internal electrode, 25 ... Metallized layer, 26 ... Base metal layer, 27 ... Window, 261 ... Metal layer.

Claims (7)

A cavity is formed by providing an annular protrusion on the substrate, a package in which a metallized layer is formed on the bottom surface in the cavity, and a metallized layer disposed on the bottom surface in the cavity. And a surface acoustic wave element accommodated in the cavity,
Wherein the metallized layer, the window portions to the respective position facing each other across the surface acoustic wave element in the propagation direction of the surface acoustic wave element is formed in contact with the protrusion in plan view,
An electronic component, wherein a metal layer different from the metallized layer is formed in the window portion.   2. The electronic component according to claim 1, wherein a metal layer different from the metallized layer is isolated from the metallized layer and formed in an island shape in the window portion. Electronic component according to claim 1 or claim 2, wherein the window portion is covered by said metallic layer. The metallized layer is composed of a plated layer formed by plating a base metal layer serving as a base of the metallized layer,
The window is formed in the metallized layer so that the base metal layer is exposed,
The electronic component according to claim 3 , wherein the metal layer includes the base metal layer exposed from the window portion. A package in which a cavity is formed by laminating an annular substrate on a substrate, a metallized layer is formed on the bottom surface in the cavity, and a metallized layer is disposed on the bottom surface in the cavity via the metallized layer. A method of manufacturing an electronic component comprising a surface acoustic wave element housed in the cavity,
Forming a base metal layer as a base for plating on the substrate;
When the surface acoustic wave element is placed on the substrate and the surface acoustic wave element is sandwiched in the propagation direction of the surface acoustic wave element , an insulating layer having light transmittance and electrical insulation is provided on the base metal layer. Forming at each position facing each other;
Laminating the annular substrate to the substrate so that the annular substrate covers a part of each of the insulating layers;
Forming the metallized layer on the base metal layer on which the insulating layer is formed by electroplating.   A package in which a cavity is formed by laminating an annular substrate on a substrate, a metallized layer is formed on the bottom surface in the cavity, and a metallized layer is disposed on the bottom surface in the cavity via the metallized layer. A method of manufacturing an electronic component comprising a surface acoustic wave element housed in the cavity,
  Forming a base metal layer as a base for plating on the substrate;
  When the surface acoustic wave element is placed on the substrate, a window portion is formed at each position facing the surface acoustic wave element in the propagation direction of the surface acoustic wave element, and the base metal is formed in the window portion. Forming an island-shaped metal layer isolated from the layer;
  Laminating the annular substrate on the substrate so that the annular substrate covers a part of each of the window portions;
  Forming the metallized layer on the underlying metal layer on which the window is formed by electroplating.   The method of manufacturing an electronic component according to claim 6, wherein the metal layer includes the base metal layer.

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