JP3427350B2 - Photoreaction processing method and photoreaction processing device - Google Patents

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention is directed to irradiating a work piece made of a non-metal material such as a fluorine-based resin material or an optical crystal material with radiant light having a wavelength that induces a non-thermal reaction. The present invention relates to a photoreactive processing method and a photoreactive processing apparatus for etching an irradiation position along an optical axis direction of radiated light.

[0002]

2. Description of the Related Art Conventionally, synchrotron radiation (SR light)
As a photo-reactive processing technique using the method described in JP-A-8-18
Japanese Patent No. 3106 has been proposed.

In this photo-reactive processing technique, a mask having a light-shielding film of a required pattern formed on one surface is placed on the processed surface of a workpiece made of a non-metallic material such as a fluorine-based resin material or an optical crystal material, and SR is used. By irradiating the entire area of the mask with light, the work piece is partially etched by the SR light that partially passes through the mask.

Conventionally, in order to variably adjust the relative position between the workpiece and the mask, the workpiece is displaced in the optical axis direction and the two-dimensional direction in a plane orthogonal to the optical axis. ing.

[0005]

In the above-mentioned conventional example, since the mask is used, the width dimension of the etching region depends on the opening dimension of the region without the light shielding film in the mask, and further fine processing is performed. It is necessary to reduce the size of the opening in the mask in order to perform the process, and it is pointed out that the mask manufacturing cost is high.

Further, in the above-mentioned conventional example, since the work piece is processed only along the optical axis direction of the SR light, the degree of freedom of the planar shape of the structure formed on the work piece is high. The side surface shape of the structure can only be parallel to the optical axis direction and cannot be processed into a complicated shape such as an inclined surface or a curved surface inclined with respect to the optical axis direction.

In view of the above circumstances, the present invention provides a photo-reactive processing method and apparatus capable of increasing the degree of processing freedom by enabling finer processing of a work piece in the simplest possible form. It is intended to be provided.

[0008]

According to a first method of photoreaction processing of the present invention, irradiation is performed by irradiating a workpiece made of a non-metallic material with radiant light having a wavelength that induces a non-thermal reaction. A method of etching a position along an optical axis direction of radiated light, wherein a desired position on a surface to be processed of a work piece is radiated by arbitrarily adjusting an irradiation time or an irradiation intensity and a luminous flux diameter from a desired azimuth. By irradiating with light, the progress direction and depth of etching are controlled.

The second photo-reactive processing method of the present invention irradiates a workpiece made of a non-metallic material with radiant light having a wavelength that induces a non-thermal reaction, thereby irradiating the irradiated position with radiant light. A method of etching along a direction of an axis, wherein the object to be processed is etched based on the target shape of the three-dimensional structure when the three-dimensional structure having a desired shape is embossed by etching the object. The required etching position on the surface of the and the required etching depth at each etching required position are specified, and the irradiation time or irradiation intensity and the luminous flux diameter can be arbitrarily set from almost the vertical direction for each of the specified etching required positions. It is characterized in that the depth of etching at each irradiation position is variably controlled by sequentially irradiating the adjusted synchrotron radiation individually.

According to a third method of photoreaction processing of the present invention, a workpiece made of a non-metallic material is irradiated with radiation having a wavelength that induces a non-thermal reaction, so that the radiation is directed along the optical axis of the radiation. A method of performing the etching, wherein when a three-dimensional structure having a desired shape is embossed by etching the work, the surface of the work is removed from the surface of the work based on the shape of the target three-dimensional structure. All the etching required positions specified on the processing target surface of the top surface of the workpiece are specified by specifying the etching required positions on the processing target surface for each depth on the assumption that processing is performed stepwise for each constant depth. Patterns with a constant etching depth are obtained by sequentially irradiating individual synchrotron radiation with irradiating light whose beam diameter is arbitrarily adjusted with a constant irradiation time or irradiation intensity from almost vertical direction. Perform ring, thereafter, repeating the same pattern with respect to processed surface of each depth is characterized by.

According to a fourth method of photoreaction processing of the present invention, a workpiece made of a non-metal material is irradiated with radiation having a wavelength that induces a non-thermal reaction, so that the radiation is directed along the optical axis of the radiation. And a method for performing etching, wherein a three-dimensional structure having a desired shape is embossed by etching the work, the surface of the work being processed based on the target shape of the three-dimensional structure. A synchrotron radiation that specifies the required etching position, the receiving direction of the synchrotron radiation, and the etching depth at each required etching position, and arbitrarily adjusts the irradiation time or the irradiation intensity and the luminous flux diameter for each of the specified required etching positions. Is sequentially and individually irradiated from a desired azimuth to control the etching azimuth and depth.

The fifth photo-reactive processing method of the present invention is the same as the first method.
In any one of the fourth to fourth methods, the light receiving portion of the workpiece is arranged in a sealed container, and the atmosphere in the sealed space is set to a vacuum state during the etching process.

The sixth photo-reactive processing method of the present invention is the above first method.
In any one of the fifth to fifth methods, the light receiving portion of the workpiece is arranged in a sealed container, and the sealed container is evacuated during the etching process.

The seventh photo-reactive processing method of the present invention is the above-mentioned first method.
In any one of the fourth to fourth methods, at least an etching-processed portion of the workpiece is heated to a required temperature.

The first photo-reaction processing apparatus of the present invention irradiates a work piece made of a non-metallic material with radiant light having a wavelength that induces a non-thermal reaction, thereby irradiating the irradiating position with radiant light. Etching along the axial direction, the light introduction element that introduces the radiant light generated by the light generating element and also reduces the luminous flux diameter of the introduced radiant light to the required size and emits it linearly, and the workpiece A stage mounted in such a posture that it receives the radiation emitted from the light introducing element with respect to the surface to be processed from a substantially vertical azimuth, and the receiving position and reception of the radiation on the surface to be processed of the workpiece on the stage. A movable element for variably adjusting the azimuth, and a control element for recognizing the etching required position, the etching depth and the progressing azimuth according to the input of the processing target of the workpiece to control the operation of the movable element. Featuring To have.

A second photo-reactive processing apparatus according to the present invention is the same as the first apparatus, except that the stage is displaced in the optical axis direction of the emitted light so that the distance between the workpiece on the stage and the light emitting end of the light introducing element is increased. It is characterized in that it includes an interval adjusting element for variably adjusting.

A third photoreaction processing apparatus of the present invention is the above-mentioned first reaction apparatus.
Alternatively, in the second apparatus, the movable element displaces the stage in a two-dimensional direction on a plane orthogonal to the optical axis direction of the radiated light to move the light receiving position of the radiated light on the processing target surface of the workpiece on the stage. A position adjusting element for variably adjusting, and an azimuth adjusting element for adjusting the light receiving azimuth of the radiated light at a required position on the surface to be processed of the workpiece by relatively changing the attitude of the stage. It has a feature.

According to a fourth aspect of the present invention, there is provided a photo-reactive processing apparatus which comprises the above third aspect.
In the above apparatus, the position adjusting element is an XY axis table that can be linearly reciprocally displaced along a two-dimensional direction in a plane orthogonal to the optical axis direction of the emitted light, and the stage is provided on a guide surface of the one axis table. It is characterized by being attached.

The fifth aspect of the present invention is a photo-reactive processing apparatus which is the same as the third aspect.
In the above apparatus, the position adjusting element is mounted with the motor for rotating the stage about the optical axis of the emitted light and the stage in a rotatable state, and the stage is orthogonal to the optical axis direction of the emitted light. And a uniaxial displacement table for displacing in a one-dimensional direction on the plane.

A sixth aspect of the present invention is a photo-reactive processing apparatus which is the same as the third aspect.
In the above device, the azimuth adjusting element comprises a tilting device for tilting the stage with respect to the optical axis of the emitted light.

In short, according to the present invention, the light receiving position and the light receiving direction of the radiated light on the work can be arbitrarily set by relatively displacing the work and the radiated light. As a result, the degree of processing freedom of the work piece can be increased, and a three-dimensional structure having a complicated side surface can be embossed on the work piece.

[0022]

DETAILED DESCRIPTION OF THE INVENTION The details of the present invention will be described based on the embodiments shown in the drawings.

FIGS. 1 and 2 show a photoreactive processing system according to an embodiment of the present invention. FIG. 1 is a block diagram showing the entire photoreactive processing system, and FIG. 2 is a block diagram showing a photoreactive processing apparatus.

In the figure, 1 is a light generating device, 2 is a photoreactive processing device, and W is a workpiece. The light generation device 1 and the light reaction processing device 2 constitute a light reaction processing system.

In the photo-reactive processing system here, a workpiece W made of a non-metallic material described below is selectively etched by direct irradiation with radiation light having a wavelength that induces a non-thermal reaction. A three-dimensional structure having an arbitrary shape can be embossed.

The workpiece W here is, for example, a non-metallic material such as a fluorine resin or an optical crystal. Examples of the former fluorine-based resin include PTFE (polytetrafluoroethylene), PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer), FEP (tetrafluoroethylene-hexafluoropropylene copolymer) and the like. The latter optical crystal is NaCl
(Sodium chloride), KBr (barium bromide), LiF
(Lithium fluoride) and the like.

The light generator 1 uses, for example, a superconducting electron storage ring manufactured by Sumitomo Heavy Industries, Ltd., and circulates electrons at the speed of light to synchrotron radiation in the tangential direction of the circular orbit of the electrons. Light (SR light) is generated. In this example, SR light is emitted in a substantially horizontal direction.

The photo-reaction processing apparatus 2 is for irradiating SR light to induce a non-thermal reaction on a workpiece W made of a non-metallic material for etching, and includes a light-introducing tube 3 to be described below. A chamber 4, a disc-shaped stage 5, a stage movable unit 6, a stage heating device 7, and a controller 8 are provided.

The light introduction tube 3 guides the SR light emitted from the light generator 1 into the chamber 4. A diaphragm plate 9 having a pinhole for narrowing the luminous flux diameter of the SR light to a required size is provided at the light emitting end of the light introducing tube 3.
Further, on the outside of the diaphragm plate 9, a shutter 1 for switching between a state of emitting SR light and a state of not emitting SR light is provided.
0 is provided. The opening diameter of the pinhole is appropriately set according to the processing form.

The chamber 4 is a sealed container whose internal atmosphere is adjusted as needed. Stage 5 is chamber 4
It is installed inside and the workpiece W is mounted on one side thereof.

The stage movable unit 6 freely adjusts the relative position of the stage 5 with respect to the pinhole of the diaphragm plate 9 of the light introducing tube 3 and sets the SR light receiving direction on the surface to be processed of the workpiece W. It is freely adjusted, and the X-Y axis feeding device 20 and the Z axis feeding device 3 described below are used.
0, a phase adjusting device 40, and an inclination adjusting device 50.

The stage heating device 7 heats the workpiece W to a required temperature via the stage 5, and includes a heater 11 embedded in the stage 5 and a driver 12 for driving the heater 11.

The controller 8 has at least the workpiece W.
On the other hand, according to a sequence program for forming a three-dimensional structure having a desired shape, the operations of the movable stage unit 6, the stage heating device 8, the shutter 10, etc. are controlled.

The XY axis feeding device 20 is for displacing the stage 5 in two orthogonal axis directions (XY axis directions) on its mounting surface, and an X table 21 on which the stage 5 is rotatably supported. , A Y table 22 on which an X table 21 is slidably mounted, motors 23 and 24 such as stepping motors, drivers 25 and 26 for driving the motors 23 and 24, and rotational power of the motors 23 and 24 to linear power. The power conversion mechanisms 27 and 28 for converting are included.

The Z-axis feed device 30 has the Y table 22 in the optical axis direction (Z-axis direction) of the SR light guided from the light introducing tube 3.
The distance between the workpiece W mounted on the stage 5 and the aperture plate 9 of the light introducing tube 3 is adjusted by moving the workpiece 5 back and forth.
A motor 31 such as a stepping motor, a driver 32 that drives the motor 31, and a power conversion mechanism 33 that converts the rotational power of the motor 31 into linear power are included.

The phase adjusting device 40 is for adjusting the phase angle θ of the stage 5 by rotating the stage 5 in both forward and reverse directions around the feeding direction (Z-axis direction) by the Z-axis feeding device 30, and a stepping motor or the like. And a driver 42 for driving the motor 41.

The tilt adjusting device 50 tilts the stage 5 with respect to the optical axis direction (Z-axis direction) of the SR light and moves the stage 5.
Of the stepping motor and a driver 52 for driving the motor 51.

The power conversion mechanisms 27 and 28 of the X-Y axis feeding device 20 and the power conversion mechanism 3 of the Z axis feeding device 30.
For 3, a feed screw or the like is used.

A method of processing the workpiece W using the photoreactive processing system having such a configuration will be described with reference to FIGS. 3 to 7.

Here, for example, as shown in FIG.
Three-dimensional structure 10 having a shape as shown in (a) to (c)
The case of forming 0, 200, and 300 will be taken as an example. Figure 3
In FIG. 3A, the conical convex three-dimensional structure 100 is shown in FIG.
FIG. 3B shows a conical convex three-dimensional structure 200 provided with a mortar-shaped recess 201, and FIG. 3C shows an overhang-shaped three-dimensional structure 300.

Of these, first, FIGS. 3 (a) and 3 (b).
The processing mode of the three-dimensional structures 100 and 200 shown in FIG.

In this case, the SR light is irradiated onto the surface of the workpiece W to be processed from the vertical direction. However, the surface of the workpiece W to be processed has a constant depth from the surface side toward the depth direction. A first processing mode in which stepwise etching is divided into a plurality of times and a second processing mode in which the processing surface of the workpiece W is subdivided and the etching rate of each region is individually variably controlled are possible. is there.

In the former first processing mode, as for the etching pattern at each stage, as shown in FIGS. 4 and 5, the target three-dimensional structure 100, 200 is formed into a cross section in the height direction according to the number of etchings. The cross-sectional shape at each height position is used as an etching pattern. In FIGS. 4 and 5, the number of times of etching is set to 7 in order to simplify the description, and the hatched portion is required to be etched in each etching pattern at each height position. This is a region, and the unshaded part is a region that does not require etching. Based on the etching pattern at each height position, the workpiece W is displaced in the plane two-dimensional direction by the XY axis feeding device 20 and the phase adjusting device 40, so that the SR light receiving position of the workpiece W is obtained. (2D coordinate) is variable and the shutter 1
The state may be switched to a state in which SR light is irradiated and a state in which SR light is not irradiated by 0. In this case, in order to change the SR light receiving position of the work piece W, it is conceivable to move the work piece W in a form as shown in FIGS. 6A and 6B, for example.

In the latter second processing mode, although not shown,
Based on the target shape of the three-dimensional structure 100, 200, the surface to be processed of the workpiece W is subdivided, and the etching depth of each region is individually variably controlled. In this case, if the workpiece W is displaced in the two-dimensional plane by the XY axis feeding device 20 and the phase adjusting device 40, the light receiving position (two-dimensional coordinate) of the SR light on the workpiece W can be changed. Good. Then, the etching depth is controlled by adjusting the irradiation time or irradiation intensity of SR light as necessary. The irradiation intensity of SR light can be controlled by changing the accumulated current to the superconducting electron accumulation ring of the light generator 1.

Next, the three-dimensional structure 30 shown in FIG.
The processing mode of 0 will be described.

First, the mortar-shaped recess 301 of the target three-dimensional structure 300 is formed. This mortar-shaped recess 301
7A, by displacing the workpiece W in the two-dimensional plane by the XY axis feeding device 20 and the phase adjusting device 40 as shown in FIG. The light receiving position (two-dimensional coordinate) of the workpiece W is changed, and the tilting direction of the workpiece W is determined by the phase adjusting device 40, and then the tilting device 50 tilts the workpiece W with respect to the optical axis of the SR light by a required angle φ. Workpiece W by tilting
In the state in which the SR light receiving direction is changed, the etching rate at each light receiving position may be variably controlled.
Thereafter, in order to form the target outer shape of the three-dimensional structure 300, as shown in FIG. 7B, the SR light on the workpiece W is formed around the mortar-shaped recess 301 in the same manner as described above. While sequentially changing the light receiving position (two-dimensional coordinate) and the light receiving direction of the SR light on the workpiece W, each light receiving position (2
The etching rate of each of the dimensional coordinates is variably controlled.

Regarding the shaping of the mortar-shaped recess 301, SR light is applied to the workpiece W as in the case of shaping the three-dimensional structures 100 and 200 shown in FIGS. 3 (a) and 3 (b). On the other hand, it is possible to perform the etching stepwise by irradiating from the vertical direction or to change the etching rate.

In any of these processing modes, SR
When the light is irradiated, a non-thermal photoreaction is locally induced only at the irradiation position on the workpiece W, and the atomic chains that are bonded to each other are broken, and the etching progresses only in the irradiation direction. Since this is a form of complete anisotropic etching, fine processing with a high aspect ratio is possible. The aspect ratio here is the ratio of the depth b to the opening a, b /
a. In other words, there is no occurrence of "blunting" at the processing end, as in the case of processing with laser light. By the way, if the storage current value for the superconducting electron storage ring of the light generator 1 is set to about 200 mA, the etching rate of PTFE becomes 40 [μm / min] or more. Then, the pinhole opening of the light introducing tube 3 is limited to 1 × 1 μm square, and the etching depth for PTFE is 50 nm.
Setting to 100 μm × 10 at this etching depth
The time required to etch the 0 μm region is about 16
It will be a minute.

For reference, the workpiece W made of PTFE is used.
On the other hand, when SR light is radiated, non-thermal evaporation occurs at the radiated position, resulting in saturated fluorocarbon as shown in FIG. On the other hand, when the workpiece W made of PTFE is irradiated with conventional general laser light, the irradiation position causes thermal evaporation, and becomes a monomer, as shown in FIG.

In the processing method described above, the atmosphere in the chamber 4 may be atmospheric pressure or vacuum.
Further, the inside of the chamber 4 may be evacuated. Further, the workpiece W may be heated by the stage heating device 7 or may not be heated. However, chamber 4
If the interior is evacuated so as to maintain the required degree of vacuum, the etching rate will be faster than in the case of performing it at atmospheric pressure, and the light receiving position of the workpiece W will undergo photoreaction with SR light irradiation. It can be said that, when the gas is vaporized, the vaporized gas is discharged at an early stage without remaining at the light receiving position, so that the processing efficiency is improved. Further, when the workpiece W is heated to the required temperature or higher, the etching rate becomes faster than that in the case where the temperature is not adjusted, so that the processing efficiency is improved.

In the processing method described above,
It is preferable to set a suitable wavelength for the SR light used for processing depending on the type of the workpiece W.

Specifically, the workpiece W is treated with PTFE or PFA.
In addition, when using a fluorine-based resin such as FEP, it is preferable to use SR light having a wavelength as shown in the chart of FIG. 10, for example. This SR light has a photon energy of 0.
It is preferable to set the wavelength in the range of 4 to 5.5 [keV], that is, 30 to 2Å. However, the permissible range of the photon energy of SR light is 284.2 [eV] to 12 [k
eV], that is, a wavelength of 45 to 1 Å can be set. If it is set higher than this upper limit value, it becomes difficult for etching to progress, and if it is set lower than the lower limit value,
Damage to the irradiation surface becomes stronger.

On the other hand, the same applies to optical crystals such as NaCl, KBr and LiF.

Incidentally, in the case where the workpiece W is made of PTFE, the relationship between the SR light irradiation intensity and the etching rate is as shown in FIG. 11, where the etching rate increases as the SR light irradiation intensity increases. I understand. Regarding the conditions at this time, the workpiece W is set to 200 ° C. by the stage heating device 7, and the photon energy of SR light is set to a range of 0.4 to 5.5 [keV]. There is. Further, the atmosphere in the chamber 4 is evacuated so as to maintain a vacuum degree of about 1 × 10 ⁻⁵ [Torr].

The present invention is not limited to the above embodiment, and various applications and modifications can be considered. (1) Stage movable unit 6 shown in the above embodiment
As for the above, any configuration may be used as long as the required operation can be realized. (2) In the above embodiment, three examples are given as the shape of the three-dimensional structure to be formed on the workpiece W, but other shapes are also arbitrary. For example, as shown in FIG. 12, it is possible to emboss various vertical cubes in which the outer wall surface and the inner wall surface are curved. The processing method in this case may be the same as the process described in the above embodiment. (3) The aperture diameter size of the pinhole of the diaphragm plate 9 shown in the above embodiment can be arbitrarily set according to the processing form. The diaphragm plate 9 can also be configured to variably adjust the diameter of its pinhole.

[0056]

The photoreactive processing method and apparatus according to the inventions of claims 1 to 13 are designed to directly irradiate a work piece with synchrotron radiation without using a mask as in the prior art. The cost can be reduced, and further fine processing of the work piece can be realized. Moreover, since the etching direction and the etching depth with respect to the minute area of the workpiece can be arbitrarily set by variably adjusting the light receiving position and the light receiving direction of the radiated light on the workpiece, the processing of the workpiece is performed. By increasing the degree of freedom, it becomes possible to emboss a three-dimensional structure having a complicated side surface shape on a workpiece.

In particular, according to the second to fourth aspects of the invention, when a three-dimensional structure having a complicated side surface shape is embossed and formed on a workpiece, the processing procedure and the process can be simplified, and it is possible to simply and efficiently. It becomes possible to form a three-dimensional structure having a free shape.

If the processing target position is set to a vacuum atmosphere as in the fifth aspect of the invention, or if the atmospheric gas at the processing target position is exhausted as in the sixth aspect of the invention, that is the case. The etching rate can be increased as compared with the case where it is not set, which contributes to the improvement of processing efficiency. Moreover, in the case of the invention of claim 6, when the light receiving position of the workpiece is photo-reacted with the irradiation of the radiant light to be vaporized into a gas, the vaporized gas does not remain at the light receiving position. Since it is discharged early, it can contribute to the further improvement of processing efficiency.

Further, as in the invention of claim 7, if the light receiving portion of the workpiece is heated to a temperature higher than the required temperature, the etching rate will be faster than in the case where the temperature is not adjusted.
It will be possible to contribute to the improvement of processing efficiency.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing an entire photoreactive processing system according to an embodiment of the present invention.

FIG. 2 is a configuration diagram showing the photoreactive processing apparatus of FIG.

FIG. 3 is a perspective view showing an example of a three-dimensional structure to be formed on a workpiece.

FIG. 4 is a schematic diagram showing a processing procedure of the three-dimensional structure of FIG.

FIG. 5 is a schematic diagram showing a processing procedure of the three-dimensional structure of FIG. 3 (b).

FIG. 6 is a schematic diagram showing a processing mode of a processing target surface at each depth position shown in FIGS. 4 and 5;

FIG. 7 is a schematic diagram showing a processing procedure of the three-dimensional structure of FIG.

FIG. 8 is a conceptual diagram showing a non-thermal reaction state of PTFE irradiated with SR light.

FIG. 9 is a conceptual diagram showing a state of thermal reaction of PTFE with laser light irradiation.

FIG. 10: Suitable SR when the work piece is PTFE
Chart showing the spectrum of light

FIG. 11 shows a case where the work piece is PTFE, S
Chart showing the relationship between the irradiation intensity of R light and the etching rate

FIG. 12 is a perspective view showing the shape of a three-dimensional structure that can be formed on a workpiece in the present invention.

[Explanation of symbols]

W Workpiece 1 Light generator 2 Optical reaction processing equipment 3 Light introduction tube 4 chambers 5 stages 6 Stage movable unit 7 Stage heating device 8 controller 9 diaphragm 10 shutters 20 XY axis feeding device 30 Z-axis feeder 40 Phase adjuster 50 Tilt adjustment device

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takanori Kato 2-1-1 Yado-cho, Tanashi-shi, Tokyo Sumitomo Heavy Industries, Ltd. Inside the Tanashi Plant (56) Reference JP-A-8-336894 (JP, A) ) (58) Fields investigated (Int.Cl. ⁷ , DB name) B29C 71/04 C08J 7/00

Claims (13)

(57) [Claims] 1. By irradiating a workpiece made of a non-metallic material with radiant light having a wavelength that induces a non-thermal reaction,
A photoreactive processing method of etching an irradiation position along an optical axis direction of radiated light, wherein an irradiation time or an irradiation intensity and a luminous flux diameter are arbitrarily set from a desired direction with respect to a desired position on a surface to be processed of a workpiece. A photo-reactive processing method, characterized in that the progress direction and depth of etching are controlled by irradiating synchrotron radiation adjusted to. 2. By irradiating a workpiece made of a non-metallic material with radiant light having a wavelength that induces a non-thermal reaction,
A photo-reactive processing method of etching an irradiation position along an optical axis direction of radiated light, which is a target three-dimensional structure when a three-dimensional structure having a desired shape is embossed by etching a workpiece. Based on the shape of, the etching required position on the surface of the workpiece and the etching required depth at each etching required position are specified, and for each of all the specified etching required positions,
Photoreactive processing characterized by variably controlling the etching depth at each irradiation position by sequentially and individually irradiating synchrotron radiation whose irradiation time or irradiation intensity and luminous flux diameter have been arbitrarily adjusted from almost the vertical direction. Method. 3. A photo-reactive processing method for performing etching along a direction of an optical axis of radiant light by irradiating a workpiece made of a non-metallic material with radiant light having a wavelength that induces a non-thermal reaction. When etching a work piece to form a three-dimensional structure having a desired shape in relief, a step is performed at a constant depth from the surface of the work piece based on the shape of the target three-dimensional structure. To specify the etching required position in the processing target surface for each depth on the premise that each depth is processed, for each of all the etching required position specified in the processing target surface of the uppermost surface of the workpiece, Patterning with a constant etching depth was performed by sequentially irradiating synchrotron radiation with the irradiation time or irradiation intensity kept constant from almost vertical azimuth and the beam diameter arbitrarily adjusted.
A photo-reactive processing method, wherein the same patterning as described above is repeated on the processing target surface for each depth. 4. A photo-reactive processing method for performing etching along a direction of an optical axis of radiated light by irradiating a workpiece made of a non-metallic material with radiant light having a wavelength that induces a non-thermal reaction. Therefore, in etching the workpiece to form a three-dimensional structure having a desired shape in relief, based on the target shape of the three-dimensional structure, the required etching position and the synchrotron radiation on the surface of the workpiece. The light receiving azimuth and the etching depth at each etching required position are specified. The photo-reactive processing method is characterized in that the azimuth and the depth of the etching are controlled by irradiating the surface. 5. The photoreactive processing method according to claim 1, wherein the light receiving portion of the workpiece is placed in a sealed container, and the atmosphere in the sealed space is kept in a vacuum state during etching processing. A photo-reactive processing method characterized by being set. 6. The photoreactive processing method according to claim 1, wherein the light receiving portion of the workpiece is placed in a sealed container, and the sealed container is evacuated during an etching process. A photo-reactive processing method characterized by. 7. The photo-reactive processing method according to claim 1, wherein at least an etching-processed portion of the workpiece is heated to a required temperature. 8. By irradiating a workpiece made of a non-metallic material with radiant light having a wavelength that induces a non-thermal reaction,
It is a photo-reactive processing device that etches the irradiation position along the optical axis direction of the emitted light, and introduces the emitted light generated by the light generating element and linearly reduces the luminous flux diameter of the introduced emitted light to the required size. A light-introducing element to be emitted to the workpiece, a stage mounted so that the workpiece receives radiation emitted from the light-introducing element in a substantially vertical direction with respect to the surface to be processed, and the workpiece on the stage Of the movable element for variably adjusting the light receiving position and the light receiving direction of the radiated light on the surface to be processed, and the movable element by recognizing the etching required position, the etching depth and the development direction according to the input of the processing target of the workpiece. And a control element for controlling the operation of the photo-reactive processing apparatus. 9. The photo-reactive processing apparatus according to claim 8, wherein the stage is displaced in the optical axis direction of the emitted light to variably adjust the gap between the workpiece on the stage and the light emitting end of the light introducing element. A photo-reactive processing apparatus comprising an adjusting element. 10. The photo-reactive processing apparatus according to claim 8 or 9, wherein the movable element displaces the stage in a two-dimensional direction on a plane orthogonal to the optical axis direction of the radiated light so as to move the workpiece on the stage. By adjusting the position of the stage relative to the position adjusting element for variably adjusting the light receiving position of the emitted light on the surface to be processed,
An azimuth adjusting element that adjusts a light receiving azimuth of radiated light at a required position on the surface to be processed of the workpiece, the photoreactive processing apparatus. 11. The photo-reactive processing apparatus according to claim 10, wherein the position adjusting element is capable of linear reciprocal displacement along a two-dimensional direction in a plane orthogonal to the optical axis direction of the radiated light.
An optical reaction processing device, wherein the optical table is a shaft table, and the stage is attached to a guide surface of the one shaft table. 12. The photo-reactive processing apparatus according to claim 10, wherein the position adjusting element is mounted with a motor for rotationally driving the stage around an optical axis of radiated light and the stage in a rotatable state. And a uniaxial displacement table for displacing the stage in a one-dimensional direction on a plane orthogonal to the optical axis direction of the emitted light. 13. The photo-reactive processing apparatus according to claim 10, wherein the azimuth adjusting element is a tilting device that tilts the stage with respect to the optical axis of the radiated light.