JP3416979B2 - Joining equipment - Google Patents
Joining equipmentInfo
- Publication number
- JP3416979B2 JP3416979B2 JP05099293A JP5099293A JP3416979B2 JP 3416979 B2 JP3416979 B2 JP 3416979B2 JP 05099293 A JP05099293 A JP 05099293A JP 5099293 A JP5099293 A JP 5099293A JP 3416979 B2 JP3416979 B2 JP 3416979B2
- Authority
- JP
- Japan
- Prior art keywords
- joining
- chip
- glass
- head
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C66/00—General aspects of processes or apparatus for joining preformed parts
- B29C66/40—General aspects of joining substantially flat articles, e.g. plates, sheets or web-like materials; Making flat seams in tubular or hollow articles; Joining single elements to substantially flat surfaces
- B29C66/47—Joining single elements to sheets, plates or other substantially flat surfaces
- B29C66/472—Joining single elements to sheets, plates or other substantially flat surfaces said single elements being substantially flat
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
- B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
- B29C65/1429—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface
- B29C65/1435—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface at least passing through one of the parts to be joined, i.e. transmission welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
- B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
- B29C65/1429—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface
- B29C65/1445—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface heating both sides of the joint
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
- B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
- B29C65/1429—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface
- B29C65/1464—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface making use of several radiators
- B29C65/1467—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface making use of several radiators at the same time, i.e. simultaneous welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
- B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
- B29C65/1487—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation making use of light guides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C66/00—General aspects of processes or apparatus for joining preformed parts
- B29C66/01—General aspects dealing with the joint area or with the area to be joined
- B29C66/05—Particular design of joint configurations
- B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
- B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
- B29C66/112—Single lapped joints
- B29C66/1122—Single lap to lap joints, i.e. overlap joints
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C66/00—General aspects of processes or apparatus for joining preformed parts
- B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
- B29C66/74—Joining plastics material to non-plastics material
- B29C66/746—Joining plastics material to non-plastics material to inorganic materials not provided for in groups B29C66/742 - B29C66/744
- B29C66/7465—Glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C66/00—General aspects of processes or apparatus for joining preformed parts
- B29C66/80—General aspects of machine operations or constructions and parts thereof
- B29C66/81—General aspects of the pressing elements, i.e. the elements applying pressure on the parts to be joined in the area to be joined, e.g. the welding jaws or clamps
- B29C66/812—General aspects of the pressing elements, i.e. the elements applying pressure on the parts to be joined in the area to be joined, e.g. the welding jaws or clamps characterised by the composition, by the structure, by the intensive physical properties or by the optical properties of the material constituting the pressing elements, e.g. constituting the welding jaws or clamps
- B29C66/8126—General aspects of the pressing elements, i.e. the elements applying pressure on the parts to be joined in the area to be joined, e.g. the welding jaws or clamps characterised by the composition, by the structure, by the intensive physical properties or by the optical properties of the material constituting the pressing elements, e.g. constituting the welding jaws or clamps characterised by the intensive physical properties or by the optical properties of the material constituting the pressing elements, e.g. constituting the welding jaws or clamps
- B29C66/81266—Optical properties, e.g. transparency, reflectivity
- B29C66/81267—Transparent to electromagnetic radiation, e.g. to visible light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C66/00—General aspects of processes or apparatus for joining preformed parts
- B29C66/90—Measuring or controlling the joining process
- B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
- B29C66/912—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux
- B29C66/9121—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux by measuring the temperature
- B29C66/91211—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux by measuring the temperature with special temperature measurement means or methods
- B29C66/91216—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux by measuring the temperature with special temperature measurement means or methods enabling contactless temperature measurements, e.g. using a pyrometer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C66/00—General aspects of processes or apparatus for joining preformed parts
- B29C66/90—Measuring or controlling the joining process
- B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
- B29C66/912—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux
- B29C66/9121—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux by measuring the temperature
- B29C66/91221—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux by measuring the temperature of the parts to be joined
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C66/00—General aspects of processes or apparatus for joining preformed parts
- B29C66/90—Measuring or controlling the joining process
- B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
- B29C66/914—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux
- B29C66/9141—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the temperature
- B29C66/91411—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the temperature of the parts to be joined, e.g. the joining process taking the temperature of the parts to be joined into account
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75302—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/81224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0094—Filling or covering plated through-holes or blind plated vias, e.g. for masking or for mechanical reinforcement
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
- Laminated Bodies (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
- Joining Of Glass To Other Materials (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】ICチップとガラス基板、あるい
はICチップの実装されたTABテープとガラス基板、
あるいはガラス基板とガラス基板などの、少なくとも一
方が光透明体である場合の、加圧と加熱による接合を行
う接合装置に関する。[Industrial application] IC chips and glass substrates, or TAB tapes and glass substrates on which IC chips are mounted,
Alternatively, the present invention relates to a joining device that joins by pressing and heating when at least one of a glass substrate and a glass substrate is a light transparent body.
【0002】[0002]
【従来の技術】ICチップの実装方法は、ICチップの
出力端子とICリードフレームとの金ワイヤーによるW
B接合(ワイヤーボンド接合)とその後の樹脂モールド
によるICパッケージ方式や、フレキシブルテープ上に
形成された銅箔のリード線とICチップの出力端子上に
形成されたバンプとの熱圧着接合とその後の樹脂モール
ドによるTAB方式(TAPE−AUTOMATED−
BONDING方式)あるいはTCP方式(TAPE−
CARIER−PACKAGE方式)などが知られてい
る。これらの実装方式は、最終形態の平面面積がICチ
ップの平面面積よりも大きくなり、高密度実装のための
最適実装方式ではない。2. Description of the Related Art A method of mounting an IC chip is a W method using a gold wire between an output terminal of the IC chip and an IC lead frame.
B package (wire bond bonding) and subsequent IC package method by resin molding, and thermocompression bonding between the copper foil lead wire formed on the flexible tape and the bump formed on the output terminal of the IC chip. TAB method by resin molding (TAPE-AUTOMATED-
Bonding method) or TCP method (TAPE-
CARIER-PACKAGE method) and the like are known. These mounting methods are not optimal mounting methods for high-density mounting because the plane area of the final form is larger than the plane area of the IC chip.
【0003】そのため最終形態の平面面積とICチップ
の平面面積が等しい方式すなわちICチップをそのまま
実装してしまう方式が採られる。ICチップとの接合対
象が、ガラスである場合がCOG方式(CHIP−ON
−GLASS方式)である。Therefore, a method is adopted in which the planar area of the final form is equal to the planar area of the IC chip, that is, the IC chip is mounted as it is. When the object to be bonded to the IC chip is glass, the COG method (CHIP-ON
-GLASS method).
【0004】COG方式の接合は、ICチップの出力端
子部と接合対象のガラスの導電部との導通性をとるため
に、ICチップの出力端子部にバンプを形成する場合
や、ICチップの出力端子部にバンプを形成しさらにパ
ンプ上にペーストを形成する場合、バンプを形成せずに
導電性のあるボールを間にいれて仲介する場合などがあ
る。また導通性を温度湿度外乱や衝撃から守るために、
ICチップと接合対象の間に接着剤などの樹脂を入れ
て、加圧と加熱により樹脂結合させて信頼性を確保す
る。In the COG type bonding, bumps are formed on the output terminal of the IC chip or the output of the IC chip in order to establish electrical continuity between the output terminal of the IC chip and the conductive part of the glass to be bonded. When forming a bump on a terminal part and further forming a paste on a pump, there is a case where a conductive ball is interposed and mediated without forming a bump. In addition, to protect the conductivity from temperature and humidity disturbances and shocks,
A resin such as an adhesive is put between the IC chip and the object to be bonded, and the resin is bonded by pressure and heat to ensure reliability.
【0005】このようにCOG方式の接合には固有差が
あるにしろ基本的に接合は、加圧と加熱を必要とする熱
圧着による接合方式の場合が多い。この方式を実現する
装置として、ICチップとガラス基板を受け台とヘッド
で挟み込むことにより加圧し、さらに加圧のためのヘッ
ドを加熱しヘッドからICチップへの熱伝導による加熱
を行うことにより、加圧と加熱を一つの機構でしかも同
時に行う接合装置が知られている。あるいはさらに、上
記装置のうち加圧のためのヘッドを加熱せずに、ガラス
基板と接する受け台をガラスとし、ガラス受け台サイド
から光ビームをICチップおよびガラス基板に照射する
ことによる加熱手段とすることにより、加圧手段と加熱
手段を独立させることによる接合装置が知られている。As described above, although there are inherent differences in the COG method of joining, the joining method is basically a joining method of thermocompression bonding which requires pressurization and heating. As an apparatus that realizes this method, the IC chip and the glass substrate are sandwiched between the pedestal and the head for pressurization, and the head for pressurization is heated to perform heating by heat conduction from the head to the IC chip. There is known a joining device that performs pressurization and heating with a single mechanism and simultaneously. Alternatively, in the above apparatus, a heating means for irradiating a light beam to the IC chip and the glass substrate from the side of the glass receiving stand is made of glass without heating the head for pressurization, and a glass. By doing so, a joining device is known in which the pressurizing means and the heating means are independent.
【0006】[0006]
【発明が解決しようとする課題】COG接合の特徴は、
接合対象がICチップとガラス基板といった剛体同士の
接合であることと、ICチップの導通用端子の配置から
決まる2次元接合すなわち面接合であることにある。こ
れらのことにより、以下のような不具合点を有してい
る。The characteristics of COG bonding are:
The objects to be joined are the joining of rigid bodies such as the IC chip and the glass substrate, and the two-dimensional joining, that is, the surface joining determined by the arrangement of the terminals for conduction of the IC chip. Due to these things, there are the following problems.
【0007】従来装置の接合過程における接合対象であ
るICチップの温度分布は、不均一になりやすい。すな
わちICチップの平面方向での不均一性と厚み方向の不
均一性が存在する。まず平面方向の温度の不均一性は、
接合過程に必要な温度条件のマージン内に全面が入らな
くなり、本来必要とする接合状態を作り出すことが出来
なくなる。特にICチップの周辺部は、他の部分に比べ
低温になり易く、接合品質評価において接合不良を発生
し易い場所である。The temperature distribution of the IC chip to be joined in the joining process of the conventional device tends to be non-uniform. That is, there is non-uniformity in the plane direction of the IC chip and non-uniformity in the thickness direction. First, the non-uniformity of the temperature in the plane direction is
The entire surface does not fit within the margin of the temperature condition required for the joining process, and the originally required joining state cannot be created. In particular, the peripheral portion of the IC chip is a place where the temperature is likely to be lower than that of other portions, and a joint failure is likely to occur in the joint quality evaluation.
【0008】次に厚み方向の温度の不均一性である。I
Cチップは、熱伝導率がよく温度均一性をはかるには比
較的よい材質であるが、従来装置による接合方式では5
〜10度程度の厚み方向の温度勾配を生じる。この温度
勾配により、ICチップに対して熱応力を発生し、接合
過程の終了時に応力歪として現れ、接合不良の発生へと
結び付くこととなる。Next, there is the non-uniformity of the temperature in the thickness direction. I
The C-chip has a good thermal conductivity and is a relatively good material for achieving temperature uniformity.
A temperature gradient in the thickness direction of about 10 degrees is generated. Due to this temperature gradient, thermal stress is generated in the IC chip, which appears as stress strain at the end of the bonding process, leading to the occurrence of defective bonding.
【0009】[0009]
【課題を解決するための手段】そこで本発明は、上記の
ような問題点を解決するもので、以下のような装置とす
る。Therefore, the present invention solves the above problems and provides the following device.
【0010】少なくとも一方が光透明体である接合対象
Aと接合対象Bとを、加圧と加熱によって接合する接合
装置において、加圧手段を構成し前記接合対象Aと接す
る加圧物Cと、同様に加圧手段を構成し前記接合対象B
と接する加圧物Dとの両方を光透明体とし、前記接合対
象A及び前記接合対象Bに対して、前記加圧物C及び前
記加圧物Dをそれぞれ透過する光ビームを前記加圧物C
及び前記加圧物Dの両サイドから照射することによっ
て、前記接合対象A及び前記接合対象Bを加熱する加熱
手段を有することを特徴とする。In a joining device for joining a joining object A and a joining object B, at least one of which is an optical transparent body, by pressing and heating, a pressurizing member C which constitutes a pressing means and is in contact with the joining object A, Similarly, the pressurizing means is configured to form the joining target B.
Both the pressurizing object D in contact with the pressurizing object D is a light transparent body, and a light beam that passes through the pressurizing object C and the pressurizing object D, respectively, is applied to the pressurizing object A and the joining object B. C
And a heating unit that heats the bonding target A and the bonding target B by irradiating from both sides of the pressed object D.
【0011】さらに、光透明体である接合対象Aと非光
透明体である接合対象Bとを、加圧と加熱によって接合
する接合装置において、加圧手段を構成し前記接合対象
Aと接する加圧物Cを光透明体とし、一方加圧手段を構
成し前記接合対象Bと接する加圧物Dを、金属と同等の
剛性をもち、且つ、熱伝導率が0.01(cal/cm
・sec・℃)以下のセラミックスあるいはガラスと
し、前記加圧物Cを透過する光ビームを照射することに
よって、前記接合対象A及び前記接合対象Bを加熱する
加熱手段を有することを特徴とする。Further, in a joining device for joining a joining object A which is a light transparent body and a joining object B which is a non-light transparent body by pressurization and heating, a pressurizing means is configured to contact the joining object A. The pressure object C is an optically transparent body, and the pressure object D, which constitutes the pressure means and is in contact with the joining target B, has rigidity equivalent to that of metal and has a thermal conductivity of 0.01 (cal / cm).
.Sec..degree. C.) or less, and a heating means for heating the bonding target A and the bonding target B by irradiating a light beam that passes through the pressurizing object C.
【0012】[0012]
【作用】 剛体同士の加圧・加熱接合によるCOG接合
などにおいて、接合過程における接合対象の平面方向お
よび厚み方向の温度均一性が保てることになり、接合条
件の確保および熱歪による熱応力の低減がはかられ、接
合品質の安定化へとつながる。[Operation] In COG bonding by pressure / heat bonding between rigid bodies, temperature uniformity in the planar direction and thickness direction of the bonding target in the bonding process can be maintained, and the bonding conditions are secured and thermal stress due to thermal strain is reduced. Peels off and leads to stabilization of bonding quality.
【0013】[0013]
【実施例】実施例は、接合対象AをICチップ・接合対
象Bを光透明体であるガラス基板の場合について主に展
開する。EXAMPLES The examples mainly apply to the case where the bonding target A is an IC chip and the bonding target B is a glass substrate which is an optical transparent body.
【0014】まず従来の接合装置の構成を、図8および
図9に示す。さらにここでは、ICチップ1とガラス基
板2の接合には、接着剤3を介して行われるものとす
る。図8は、加圧手段として受け台4とヘッド5により
構成され、ICチップ1とガラス基板2が間に挟み込ま
れる。加熱手段は、加圧用のヘッド5に埋め込まれたヒ
ーター6を加熱することにより実現される。ヒーター6
により発生する熱は、ヘッドに熱伝達されさらにヘッド
内を熱伝導し、最後に加熱対象であるICチップに熱伝
達される。このため、ヘッドには熱伝導率の良く剛性の
ある鉄等が用いられる。First, the construction of a conventional joining apparatus is shown in FIGS. 8 and 9. Further, here, it is assumed that the IC chip 1 and the glass substrate 2 are bonded to each other via the adhesive 3. FIG. 8 is composed of a pedestal 4 and a head 5 as a pressing means, and the IC chip 1 and the glass substrate 2 are sandwiched between them. The heating means is realized by heating the heater 6 embedded in the pressurizing head 5. Heater 6
The heat generated by the heat is transferred to the head, further conducted inside the head, and finally transferred to the IC chip which is a heating target. For this reason, iron or the like, which has good thermal conductivity and rigidity, is used for the head.
【0015】つぎに図9は、図8の場合と違い加熱手段
として光ビーム10を用いている。このため、受け台は
光透過性のあるガラス受け台7であり、光ファイバー8
により導かれた光が集光レンズ9により集光され、ガラ
ス受け台7とガラス基板2を透過し、ICチップとガラ
ス基板の接合面に照射される。加圧手段と加熱手段が分
離されることにより、接合工程の最適化がはかられる。Next, in FIG. 9, a light beam 10 is used as a heating means unlike the case of FIG. Therefore, the pedestal is the light-transmissive glass pedestal 7 and the optical fiber 8
The light guided by is condensed by the condensing lens 9, passes through the glass pedestal 7 and the glass substrate 2, and is applied to the bonding surface between the IC chip and the glass substrate. By separating the pressurizing means and the heating means, the joining process can be optimized.
【0016】しかし、図8および図9による接合装置で
は課題に示した問題点が発生し、これらを根本的に解決
する方式として、以下の接合装置が有効となる。However, the problems described in the problems occur in the joining device according to FIGS. 8 and 9, and the following joining device is effective as a method for fundamentally solving these problems.
【0017】図1に請求項1の実施例を示す。ガラス基
板2と接するように受け台として光透明体であるガラス
受け台7を配置し、光ファイバー8により導かれた光が
集光レンズ9により集光され、ガラス受け台7とガラス
基板2を透過し、ICチップとガラス基板の接合面に照
射される。また、ICチップ1と接する受け台として光
透明体であるガラスを用い、このガラスの上面からIC
チップ1の全面に対して光ビーム10を照射できる領域
の存在するヘッドホルダー14でガラスヘッド13を保
持する。こうして接合工程において、ガラス受け台7と
ガラス基板2を透過して接合面に照射される光ビーム1
0と、ガラスヘッド13を透過してICチップ1の上面
に照射される光ビーム10とにより、全体が加熱される
ことになる。これにより、接合対象であるICチップ1
とガラス基板2さらに接着剤3に対して加圧手段と分離
された加熱手段が構成され、加圧加熱分離接合が可能と
なる。しかも、接合対象に対して両面からの加熱が可能
となり加熱能力の向上に加え、加熱対象の温度均一性が
確保されることになる。特に、ICチップの厚み方向の
温度分布が均一になり、ICチップ1に熱応力が発生す
ることなく接合工程が終了し、接合品質が向上する。FIG. 1 shows an embodiment of claim 1. A glass receiving stand 7 which is a light transparent body is arranged as a receiving stand so as to be in contact with the glass substrate 2, and the light guided by the optical fiber 8 is condensed by the condenser lens 9 and transmitted through the glass receiving stand 7 and the glass substrate 2. Then, the joint surface between the IC chip and the glass substrate is irradiated. Further, a glass, which is an optical transparent body, is used as a pedestal that contacts the IC chip 1, and the IC is viewed from the upper surface of the glass.
The glass head 13 is held by the head holder 14 in which there is a region where the light beam 10 can be applied to the entire surface of the chip 1. Thus, in the bonding step, the light beam 1 that is transmitted through the glass pedestal 7 and the glass substrate 2 and is irradiated onto the bonding surface 1
The whole is heated by 0 and the light beam 10 which passes through the glass head 13 and is irradiated onto the upper surface of the IC chip 1. As a result, the IC chip 1 that is the bonding target
The glass substrate 2 and the adhesive 3 constitute heating means separated from the pressurizing means, enabling pressurizing, heating and separating joining. In addition, the objects to be joined can be heated from both sides, which improves the heating capacity and ensures the temperature uniformity of the objects to be heated. In particular, the temperature distribution in the thickness direction of the IC chip becomes uniform, the joining process is completed without thermal stress occurring in the IC chip 1, and the joining quality is improved.
【0018】つぎに、図2に請求項1の別の実施例を示
す。図1と同様、ガラス基板2と接するように受け台と
して光透明体であるガラス受け台7を配置し、光ファイ
バー8により導かれた光が集光レンズ9により集光さ
れ、ガラス受け台7とガラス基板2を透過し、ICチッ
プとガラス基板の接合面に照射される。さらに、ICチ
ップ1と接する面にヘッドとして光透明体であるガラス
ヘッド13を用い、さらにヘッド内部の途中に光を反射
するミラー11をICチップ1に対して斜めに設ける。
そこで、ガラスヘッド13が加圧状態にある位置で光を
ガラスヘッド13の横方向から照射し、その光がガラス
ヘッド13のミラー11により反射し、ICチップ1の
上面に照射されるように配置する。この光は、ガラス受
け台サイドからの光と同様に、光ファイバー8で導かれ
た光を集光レンズ9により集光してもよく、光ファイバ
ーで集光することなく直接照射される光でもよい。こう
して図1の実施例と同様に、ICチップの厚み方向の温
度分布が均一になり、熱応力が発生することなく接合工
程が終了し、接合品質が向上する。さらにこの接合構造
では、従来のヘッドの代わりにヘッド材質と構成を変更
するだけで済み、大幅な構造変更にもならない。Next, FIG. 2 shows another embodiment of claim 1. Similar to FIG. 1, a glass receiving stand 7 which is a light transparent body is arranged as a receiving stand so as to be in contact with the glass substrate 2, and the light guided by the optical fiber 8 is condensed by the condensing lens 9 to form the glass receiving stand 7. The light passes through the glass substrate 2 and is irradiated onto the bonding surface between the IC chip and the glass substrate. Further, a glass head 13 which is a light transparent body is used as a head on the surface in contact with the IC chip 1, and a mirror 11 for reflecting light is provided obliquely with respect to the IC chip 1 in the middle of the head.
Therefore, the glass head 13 is arranged so that light is emitted from the lateral direction of the glass head 13 at a position where the glass head 13 is under pressure, and the light is reflected by the mirror 11 of the glass head 13 and is emitted to the upper surface of the IC chip 1. To do. Similar to the light from the side of the glass pedestal, this light may be the light guided by the optical fiber 8 condensed by the condenser lens 9 or may be the light directly irradiated without being condensed by the optical fiber. Thus, similarly to the embodiment of FIG. 1, the temperature distribution in the thickness direction of the IC chip becomes uniform, the joining process is completed without the generation of thermal stress, and the joining quality is improved. Furthermore, in this joint structure, only the head material and structure are changed instead of the conventional head, and the structure is not changed drastically.
【0019】さらに図3は図2に付加機能を加えた実施
例である。すなわち、ガラスヘッド13のミラーをハー
フミラー12としガラスヘッド13の上方に温度センサ
ーやCCD17などを配置することにより、接合工程に
おけるICチップ上面の温度状態をモニターすることが
可能となる。これにより、光ビーム10の強度を逐次制
御することが可能となり、より適正な接合品質を確保す
ることも実現される。Further, FIG. 3 shows an embodiment in which an additional function is added to FIG. That is, by using the half mirror 12 as the mirror of the glass head 13 and disposing the temperature sensor and the CCD 17 above the glass head 13, it becomes possible to monitor the temperature state of the upper surface of the IC chip in the bonding process. As a result, the intensity of the light beam 10 can be sequentially controlled, and more appropriate bonding quality can be ensured.
【0020】さらに、図4に請求項1の別の実施例を示
す。これも図2と同様、ガラス基板2と接するように受
け台として光透明体であるガラス受け台7を配置し、光
ファイバー8により導かれた光が集光レンズ9により集
光され、ガラス受け台7とガラス基板2を透過し、IC
チップとガラス基板の接合面に照射される。さらに、I
Cチップ1と接する面にヘッドとして光透明体であるガ
ラスヘッド13を用い、さらにヘッド内部の途中に光を
反射するミラー11をICチップ1に対して斜めに設け
る。このミラー11は図2の場合と違い、ガラスヘッド
13の両サイドから光ビームが照射できるよう中心部を
対称に2面配置されている。さらに、両サイドに配置さ
れた光ファイバー8は、上下に配置変更可能であり、そ
の上下に合わせて照射される光ビームの照射位置が変化
することが可能である。この機構は、ICチップ1の平
面方向の温度分布の不均一性に合わせて、温度の低い部
分を選択的に照射し温度分布を均一化するための機構で
ある。具体的には、ガラス受け台7サイドからの光ビー
ムだけでは、ICチップ1の周辺部の温度が中央部に比
べ低くなり易く、これを均一化するのに有効である。C
OG用にICチップは、従来の正方形に近い形状でなく
細長形状のものが多用され、長手方向の温度不均一性が
出易く特に有効である。Further, FIG. 4 shows another embodiment of claim 1. Similarly to FIG. 2, a glass receiving stand 7 which is a light transparent body is arranged as a receiving stand so as to be in contact with the glass substrate 2, and the light guided by the optical fiber 8 is condensed by the condensing lens 9 so that the glass receiving stand. 7 and the glass substrate 2 are transmitted, and IC
The joint surface between the chip and the glass substrate is irradiated. Furthermore, I
A glass head 13 which is a light transparent body is used as a head on the surface in contact with the C chip 1, and a mirror 11 for reflecting light is provided obliquely to the IC chip 1 in the middle of the head. Unlike the case of FIG. 2, the mirror 11 is arranged in two symmetrical planes so that the light beam can be emitted from both sides of the glass head 13. Further, the optical fibers 8 arranged on both sides can be changed in the vertical arrangement, and the irradiation position of the light beam irradiated in the vertical direction can be changed. This mechanism is a mechanism for making the temperature distribution uniform by selectively irradiating the low temperature part in accordance with the nonuniformity of the temperature distribution in the plane direction of the IC chip 1. Specifically, the temperature of the peripheral portion of the IC chip 1 is likely to be lower than that of the central portion with only the light beam from the side of the glass pedestal 7, and it is effective to make the temperature uniform. C
For the OG, the IC chip is often used in an elongated shape instead of the shape close to the conventional square shape, and temperature nonuniformity in the longitudinal direction is likely to occur, which is particularly effective.
【0021】さてつぎに図5に、請求項2の実施例を示
す。ガラス基板2と接するように受け台として光透明体
であるガラス受け台7を配置し、光ファイバー8により
導かれた光が集光レンズ9により集光され、ガラス受け
台7とガラス基板2を透過し、ICチップとガラス基板
の接合面に照射される。一方ICチップ1と接するガラ
スヘッド13は、従来例の図9のヘッドと形状は同じで
あるが、材質は鉄などの熱伝導率の高いものでなく、し
かも加圧力に耐えられるある程度の剛性を持ったセラミ
ックスあるいはガラスなどの低熱伝導ヘッド15を用い
ることが大きな特徴である。熱伝導率は、炭素鋼やステ
ンレスのそれより1桁近く低い0.01(cal/cm
・sec・℃)以下の熱伝導率の特性を持ったものと
し、セラミックスあるいはガラスがこれに相当する。こ
のことにより得られる接合における効果を、図6に示
す。横軸をICチップの平面方向の場所・縦軸を温度と
して、従来の鉄ヘッドによる場合と本方式のセラミック
スあるいはガラスヘッドの場合との、ICチップの上面
と下面の温度分布曲線を示している。これによれば、ま
ずそれぞれの場所の到達温度が上昇しており、温度効率
がおおきく改善されていることがわかる。また、ICチ
ップの場所別の温度差(平面方向の温度差)も少なくな
り、さらにICチップの上面と下面の温度差(厚み方向
の温度差)も少なくなることが判る。この様に、ヘッド
の材質を熱伝導率の低いものに変更するだけで、大きな
効果が見られる。Next, FIG. 5 shows an embodiment of claim 2. A glass receiving stand 7 which is a light transparent body is arranged as a receiving stand so as to be in contact with the glass substrate 2, and the light guided by the optical fiber 8 is condensed by the condenser lens 9 and transmitted through the glass receiving stand 7 and the glass substrate 2. Then, the joint surface between the IC chip and the glass substrate is irradiated. On the other hand, the glass head 13 in contact with the IC chip 1 has the same shape as the head of FIG. 9 of the conventional example, but the material is not a material having a high thermal conductivity such as iron, and has a certain degree of rigidity capable of withstanding a pressing force. The main feature is to use the low thermal conductivity head 15 made of ceramics or glass. The thermal conductivity is lower than that of carbon steel and stainless steel by almost one digit, 0.01 (cal / cm).
・ Sec · ° C) or less, and ceramics or glass corresponds to this. The effect in joining obtained by this is shown in FIG. The horizontal axis represents the position in the plane direction of the IC chip, and the vertical axis represents the temperature, showing the temperature distribution curves of the upper and lower surfaces of the IC chip for the conventional iron head and the ceramics or glass head of this system. . According to this, first, the temperature reached at each place is rising, and it can be seen that the temperature efficiency is greatly improved. Further, it can be seen that the temperature difference (temperature difference in the plane direction) for each location of the IC chip is reduced, and further, the temperature difference between the upper surface and the lower surface of the IC chip (temperature difference in the thickness direction) is also reduced. In this way, a great effect can be seen only by changing the material of the head to one having a low thermal conductivity.
【0022】つぎに図7に、請求項2の別の実施例を示
す。図7−(a)は、図6のヘッド機構例であり、図7
−(b)および図7−(c)および図7−(d)はその
改良例である。図6の場合には、ICチップの温度効率
や厚み方向の温度分布は改善されるが、平面方向の温度
分布が多少であるが温度勾配を残してしまう。本方式
は、これを改善するものである。すなわちヘッド自身の
材質を低熱伝導率のものに変更し、さらにヘッドの形状
を変えたりヘッドに熱伝導率の異なる材質を混入させた
りすることにより、ヘッド周辺部の到達温度を中央部と
同一にするものである。図7−(b)は中央部の厚みを
薄くすることによる材料の厚み差で実現し、図7−
(c)は高熱伝導率の材料を中央部に部分的に配置させ
ることによりそれを実現し、さらに図7−(d)はヘッ
ド周辺をオーバーハングさせICチップからの熱輻射を
防ぐ形状をつることにより、各々実現している。このよ
うに以上の方式を積極的に利用することにより、ICチ
ップの温度分布を部分的に高くしたり、逆に低くしたり
することも可能となる。Next, FIG. 7 shows another embodiment of claim 2. 7- (a) is an example of the head mechanism of FIG.
-(B), FIG. 7- (c), and FIG. 7- (d) are examples of the improvement. In the case of FIG. 6, although the temperature efficiency of the IC chip and the temperature distribution in the thickness direction are improved, the temperature gradient in the plane direction remains, although it is small. This method improves this. That is, by changing the material of the head itself to one with a low thermal conductivity, and by changing the shape of the head or mixing a material with a different thermal conductivity into the head, the temperature reached in the peripheral area of the head becomes the same as that in the central area. To do. FIG. 7- (b) is realized by the difference in material thickness by reducing the thickness of the central portion.
(C) realizes this by partially arranging a material having a high thermal conductivity in the central portion, and FIG. 7- (d) shows a shape that prevents the heat radiation from the IC chip by overhanging the head periphery. By doing so, each is realized. By positively utilizing the above method, it is possible to partially increase the temperature distribution of the IC chip or lower it.
【0023】[0023]
【発明の効果】光の持つ選択性と高応答性と非接触性の
特性を生かすことにより、接合過程を高精度の選択的な
エネルギー供給と短時間の集中的なエネルギー供給さら
には非接触なエネルギー供給であることによる熱と力の
分離を効果的に利用して実現できるために、接合過程に
とって最適なプロセス制御が可能となる。EFFECTS OF THE INVENTION By utilizing the characteristics of light, such as high response and high non-contact property, the joining process can be performed with high precision selective energy supply, short-time intensive energy supply and non-contact. Since it can be realized by effectively utilizing the separation of heat and force due to the energy supply, optimum process control for the joining process becomes possible.
【0024】これにより、ICチップとガラスパネルを
アライメントする仮接合のための品質や最終的な接合を
行う本接合のための品質など、要求される接合品質に対
しての自由度が増すことになり、バリエーションに富ん
だ工程選択と品質の良い接合状態が容易に実現できる。As a result, the degree of freedom with respect to the required joining quality such as the quality for the temporary joining for aligning the IC chip and the glass panel and the quality for the final joining for the final joining is increased. Therefore, a wide variety of process selections and high quality joints can be easily realized.
【図1】本発明の請求項1による接合装置図。FIG. 1 is a view of a bonding apparatus according to claim 1 of the present invention.
【図2】本発明の請求項1による接合装置図。FIG. 2 is a diagram of a joining device according to claim 1 of the present invention.
【図3】本発明の請求項1による接合装置図。FIG. 3 is a diagram of a bonding apparatus according to claim 1 of the present invention.
【図4】本発明の請求項1による接合装置図。FIG. 4 is a diagram of a bonding apparatus according to claim 1 of the present invention.
【図5】本発明の請求項2による接合装置図。FIG. 5 is a view of a bonding apparatus according to claim 2 of the present invention.
【図6】本発明の請求項2による温度特性改善図。FIG. 6 is a temperature characteristic improvement diagram according to claim 2 of the present invention.
【図7】本発明の請求項2によるヘッド機構図。FIG. 7 is a diagram of a head mechanism according to claim 2 of the present invention.
【図8】従来の接合装置図。FIG. 8 is a view of a conventional joining device.
【図9】従来の接合装置図FIG. 9 is a view of a conventional joining device.
1:ICチップ 2:ガラス基板 3:接着剤 4:受け台 5:ヘッド 6:ヒーター 7:ガラス受け台 8:光ファイバー 9:集光レンズ 10:光ビーム 11:ミラー 12:ハーフミラー 13:ガラスヘッド 14:ヘッドホルダー 15:低熱伝導ヘッド 16:ベース 17:温度センサーやCCDカメラ 1: IC chip 2: Glass substrate 3: Adhesive 4: cradle 5: Head 6: heater 7: Glass cradle 8: Optical fiber 9: Condensing lens 10: Light beam 11: Mirror 12: Half mirror 13: Glass head 14: Head holder 15: Low thermal conductivity head 16: Base 17: Temperature sensor and CCD camera
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI H05K 3/36 H05K 3/36 Z (58)調査した分野(Int.Cl.7,DB名) B32B 1/00 - 35/00 C03C 27/00 - 29/02 H01L 21/447 H01L 21/60 - 21/603 B29C 65/00 - 65/82 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 identification code FI H05K 3/36 H05K 3/36 Z (58) Fields investigated (Int.Cl. 7 , DB name) B32B 1/00-35 / 00 C03C 27/00-29/02 H01L 21/447 H01L 21/60-21/603 B29C 65/00-65/82
Claims (2)
象Aと接合対象Bとを、加圧と加熱によって接合する接
合装置において、 加圧手段を構成し前記接合対象Aと接する加圧物Cと、
同様に加圧手段を構成し前記接合対象Bと接する加圧物
Dとの両方を光透明体とし、前記接合対象A及び前記接
合対象Bに対して、前記加圧物C及び前記加圧物Dをそ
れぞれ透過する光ビームを前記加圧物C及び前記加圧物
Dの両サイドから照射することによって、前記接合対象
A及び前記接合対象Bを加熱する加熱手段を有すること
を特徴とする接合装置。1. A joining device for joining a joining object A and a joining object B, at least one of which is an optical transparent body, by pressurization and heating, wherein a pressurizing object C constituting a pressurizing means and coming into contact with the joining object A. When,
Similarly, both the pressurizing means and the pressurizing object D in contact with the joining target B are light transparent bodies, and the pressurizing object C and the pressurizing object are applied to the joining target A and the joining target B. Bonding, characterized by comprising heating means for heating the bonding target A and the bonding target B by irradiating light beams respectively passing through D from both sides of the pressing target C and the pressing target D. apparatus.
である接合対象Bとを、加圧と加熱によって接合する接
合装置において、加圧手段を構成し前記接合対象Aと接
する加圧物Cを光透明体とし、一方加圧手段を構成し前
記接合対象Bと接する加圧物Dを、金属と同等の剛性を
もち、且つ、熱伝導率が0.01(cal/cm・se
c・℃)以下のセラミックスあるいはガラスとし、前記
加圧物Cを透過する光ビームを照射することによって、
前記接合対象A及び前記接合対象Bを加熱する加熱手段
を有することを特徴とする接合装置。2. A joining device for joining a joining target A which is a light transparent body and a joining subject B which is a non-light transparent body by pressurization and heating, which constitutes a pressurizing means and which is in contact with the joining target A. The pressure object C is a light-transparent material, and the pressure object D, which constitutes a pressure means and is in contact with the joining target B, has rigidity equivalent to that of a metal and has a thermal conductivity of 0.01 (cal / cm · se
c or ° C) or less, and by irradiating with a light beam that passes through the pressurizing material C,
A bonding apparatus having a heating unit for heating the bonding target A and the bonding target B.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05099293A JP3416979B2 (en) | 1993-03-11 | 1993-03-11 | Joining equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05099293A JP3416979B2 (en) | 1993-03-11 | 1993-03-11 | Joining equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06262743A JPH06262743A (en) | 1994-09-20 |
JP3416979B2 true JP3416979B2 (en) | 2003-06-16 |
Family
ID=12874290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP05099293A Expired - Lifetime JP3416979B2 (en) | 1993-03-11 | 1993-03-11 | Joining equipment |
Country Status (1)
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---|---|
JP (1) | JP3416979B2 (en) |
Cited By (1)
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---|---|---|---|---|
KR20140113300A (en) | 2013-03-15 | 2014-09-24 | 시부야 코교 가부시키가이샤 | Bonding apparatus |
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---|---|---|---|---|
WO2006105782A2 (en) | 2005-04-08 | 2006-10-12 | Pac Tech-Packaging Technologies Gmbh | Method and device for transferring a chip to a contact substrate |
JP5120751B2 (en) * | 2008-01-31 | 2013-01-16 | 澁谷工業株式会社 | Bonding equipment |
JP5713157B2 (en) * | 2010-11-11 | 2015-05-07 | 澁谷工業株式会社 | Bonding equipment |
KR101211961B1 (en) | 2011-02-01 | 2012-12-18 | 마이크로 테크놀러지 가부시키가이샤 | Thin glass substrate attachment and method of manufacturing the same |
CN103477424B (en) | 2011-02-02 | 2016-12-14 | 派克泰克封装技术有限公司 | For the method and apparatus by utilizing the welding of gaseous fluxes dielectric laser that the joint face of two substrates is made electrical contact with |
KR101470386B1 (en) * | 2013-07-19 | 2014-12-09 | 한국광기술원 | Sintering device for bonding led chip |
JP6464593B2 (en) * | 2014-07-24 | 2019-02-06 | セイコーエプソン株式会社 | Gas cell manufacturing method |
KR102174930B1 (en) * | 2019-04-09 | 2020-11-05 | 레이저쎌 주식회사 | Laser pressure head module of laser reflow equipment |
KR102391169B1 (en) * | 2020-03-11 | 2022-05-03 | 넥스타테크놀로지 주식회사 | Mounting head and apparatus for mounting component comprising the same |
-
1993
- 1993-03-11 JP JP05099293A patent/JP3416979B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140113300A (en) | 2013-03-15 | 2014-09-24 | 시부야 코교 가부시키가이샤 | Bonding apparatus |
US9468106B2 (en) | 2013-03-15 | 2016-10-11 | Shibuya Kogyo Co., Ltd. | Bonding system |
Also Published As
Publication number | Publication date |
---|---|
JPH06262743A (en) | 1994-09-20 |
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