JP3414668B2 - Method of manufacturing field emission cold cathode device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a field emission cold cathode device and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, a field emission type cold cathode device using a field emission type cold cathode utilizing the developed Si semiconductor processing technology has been actively developed. A typical example is CA Spindt et al., Jou.
rnal of Applied Physics, V
ol. 47, 5248 (1976) is known. In this field emission type cold cathode device, after forming a SiO ₂ layer and a gate electrode layer on a Si single crystal substrate, a hole having a diameter of about 1.5 μm is further formed, and field emission is performed in this hole. The conical emitter is produced by vapor deposition.

A method of manufacturing the conventional field emission type cold cathode device will be described with reference to FIG.

First, a SiO ₂ layer 102 is formed as an insulating layer on a Si single crystal substrate 101 by a deposition method such as CVD. Next, a Mo layer 103 and an Al layer 104 to be a gate electrode layer are formed thereon by a sputtering method or the like. Next, a hole 105 having a diameter of about 1.5 μm is formed by etching.
Is formed on the layers 102, 103, 104 (FIG. 12A).
reference).

Next, a conical emitter 107 for field emission is formed in the hole 105 by vapor deposition (see FIG. 12B). The formation of the emitter 107 is performed by vacuum-depositing a metal, which is a material of the emitter, such as Mo, in a direction perpendicular to the substrate 101 in a rotated state. At this time, the pinhole diameter corresponding to the opening of the hole 105 decreases as the Mo layer 106 is deposited on the Al layer 104, and finally becomes 0. For this reason,
Emitter 10 in hole 105 deposited through pinhole
The diameter of 7 also gradually decreases and becomes a conical shape. Al
The excess Mo layer 106 deposited on the layer 104 will be removed later (see FIG. 12C).

[0006]

However, the conventional method of manufacturing a field emission cold cathode device and the field emission cold cathode device manufactured by the method have the following important problems.

First, in the above-mentioned conventional example, an emitter is formed on the inner surface of the hole by utilizing the fact that the diameter of the pinhole formed in the Al layer 201 is gradually decreased by the rotary evaporation method. Therefore, the height of the emitter, the shape of the tip, etc. vary, the uniformity of the field emission is poor, and the sharpness of the tip of the emitter required to improve the field emission efficiency is lacking, resulting in a decrease in the field emission efficiency and consumption. There was a problem such as an increase in electric power. In addition, reproducibility and yield are poor, which is a main cause of increase in production cost when a large number of field emission cold cathode portions are formed on the same substrate.

Further, when it is desired to manufacture a large area one, the distance between the vapor deposition source and the substrate becomes large because the incident angle must be constant when the Al layer is licked and subjected to rotary vapor deposition, and the vacuum vapor deposition apparatus is In addition to being huge, it is difficult to fabricate the device itself, and the evacuation time is long, making it difficult to obtain a large-area emitter array.

The present invention has been made in view of the above points,
It is an object of the present invention to provide a method for manufacturing a field emission type cold cathode device which has good field emission uniformity, high field emission efficiency, high integration, and a large area.

[0010]

A first aspect of a method for manufacturing a field emission cold cathode device according to the present invention comprises a step of forming a sharp concave portion on a surface of a first substrate and a step of forming a sharp concave portion on a second substrate. A step of forming a resin sheet layer using at least one resin of a thermoplastic resin, an ultraviolet curable resin, and a thermosetting resin; and a step of forming the first substrate into a second substrate on which the resin sheet layer is formed. The resin of the resin sheet layer into the recess of the first substrate, and deforming the resin sheet layer so as to have a sharp convex shape on the surface; And a step of forming a conductive layer serving as an emitter portion on the surface of the resin sheet layer after separating from the resin sheet layer.

A second aspect of the method for manufacturing a field emission cold cathode device according to the present invention is the step of forming a sharp concave portion on the surface of the first substrate, a thermoplastic resin, an ultraviolet curable resin,
And a step of forming a resin sheet layer having a resin layer using at least one resin of thermosetting resin and a conductive layer formed on at least one surface of the resin layer on the second substrate. , The first substrate is applied to the second substrate on which the resin sheet layer is formed, and the conductive layer and the resin sheet layer of the resin sheet layer are inserted into the recesses of the first substrate, The method is characterized by including a step of deforming the resin sheet layer so as to have a sharply-projected emitter portion, and a step of separating the first substrate from the resin sheet layer.

The resin sheet layer may be laminated.

The first substrate may be curved.

The first substrate may have a cylindrical shape.

After the emitter is formed, a step of forming an insulating film on the emitter and a step of forming the conductive layer of a resin insulating sheet having a conductive layer to be a gate layer on one surface are formed. It is preferable that a step of pressing the side opposite to the side against the emitter portion of the resin sheet to break through the resin insulating sheet to expose the convex emitter portion.

Further, the field emission type cold cathode device according to the present invention is such that a plurality of emitters each formed of a sharp convex conductor formed on the substrate and a tip of each emitter are exposed on the substrate. And an insulating layer formed on the insulating film between the emitters, and a gate layer made of a conductor formed on the insulating film between the emitters.

The exposed tip of the emitter may be covered with an insulating film.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) FIGS. 1A to 1
(C) is a process sectional view showing a manufacturing process of the first embodiment of the method for manufacturing a field emission cold cathode device according to the present invention.

First, a sharp recess having a sharp bottom is formed on the substrate 1. As a method of forming such a recess, for example, Japanese Patent Application Laid-Open No. 6-36 filed by the present applicant.
Based on a master substrate (not shown) having a sharp convex portion utilizing anisotropic etching of a Si single crystal substrate as disclosed in Japanese Patent No. 682 (Japanese Patent Application No. 4-186753), electrical There is a method of forming a mold mold substrate having a sharp recess by using plating, for example, Ni plating. First, a SiO ₂ layer having a thickness of 0.1 μm is formed on a p-type (100) crystal plane orientation Si single crystal substrate by a dry oxidation method, and a resist is further applied by a spin coating method. Next, a stepper is used to perform patterning such as exposure and development so as to obtain, for example, a square opening of 1 μm square, and then the SiO ₂ layer is etched with an NH ₄ · F · HF mixed solution. After resist removal, 30 wt% KO
Anisotropic etching is performed using a H aqueous solution to a depth of 0.
A first recess of 71 μm on the inverted pyramid is formed on the Si single crystal substrate.

Next, the SiO ₂ layer is once removed using a mixed solution of NH ₄ , F and HF, and then the SiO ₂ layer is formed on the Si single crystal substrate including the inside of the first recess. In this example, the SiO ₂ layer was formed by the wet oxidation method so as to have a thickness of 0.3 μm. Further, for example, tungsten, molybdenum, or nickel is formed on the SiO ₂ layer as an emitter layer having a convex pointed portion so as to fill the first recess.

In the above example, the nickel layer is formed by sputtering to have a thickness of 2 μm. After this,
A master substrate having a large number of sharp convex shapes is obtained by adhering the nickel layer to a glass substrate by electrostatic adhesion or resin adhesion, and etching the Si substrate with tetramethylammonium hydroxide (TMAH) solution or the like. can get. The master substrate may be formed by using the conventional rotary evaporation method or another method.

Next, after degreasing the surface of the master substrate and activating the surface with a fluoride such as ammonium fluoride, a thick support layer is formed by electroless Ni plating and electrolytic Ni plating, or electrolytic plating. After that, separate from the master board,
A mold mold substrate 1 having a large number of sharp concave portions is produced. In the case of the above example, the mold substrate 1 having a supporting layer having a thickness of 50 μm was produced.

Returning to FIG. 1 again, after placing the thermoplastic polyimide sheet 2 on the substrate 3 made of, for example, glass,
The mold substrate 1 is pressed (see FIG. 1B).
In this case, while gradually applying pressure, the temperature is raised to 330 ° C. at a rate of 15 ° C./min. After reaching 330 ° C., it is left as it is for 30 minutes and the pressure is increased to 14 to 20 kg / cm ² .

Next, the temperature is raised to 350 ° C. and left for 1 hour, then cooled while maintaining the pressure as it is, so that the polyimide sheet is deformed into a sharp convex shape, and at the same time, the polyimide sheet 2 is formed on the glass substrate 3. Laminated and bonded. Next, the mold substrate 1 and the polyimide sheet layer 2 are separated from each other to obtain the polyimide sheet layer 2 having the sharp protrusions 2a. The mold die substrate 1 is used as a master mold die substrate, and thereafter, due to the pressure deformation of the polyimide sheet by the die, a large area having a sharp convex portion is formed with good reproducibility many times. Resin sheet layer 2
Can be obtained in large quantities.

Next, on the resin sheet layer 2, for example, molybdenum, including the protrusions 2a, is used as the emitter layer 4,
A field emission type cold cathode device having a sharp and highly productive emitter section 6 formed by a sputtering method, a vapor deposition method, a printing method, an electroplating method or the like can be obtained. This state is shown in Fig. 1 (c).
Shown in. At this time, the emitter section 6 may be formed as a cathode line, or fine particles such as Au, Pt, Ag, Cu, Mo and W may be mixed in the resin sheet layer 2, or ultra fine particles may be mixed. When the resin sheet layer is used as a conductive layer by making the resin itself conductive or by carbonizing the resin sheet layer, a cathode line may be formed on the back surface of the resin. Further, this resin sheet conductive layer may be used as a core material resistance ballast layer. Furthermore, this resin sheet conductive layer may be bonded to a substrate other than a glass substrate, for example, a ceramic substrate, a glass epoxy substrate, or a metal substrate, or the cathode line may be previously formed on the glass supporting substrate. In that case, it is desirable to electrically separate a large number of aligned emitters by etching or the like in order to enhance the resistance ballast effect.

Although it can be used as it is for various electronic devices, for example, SiO ₂ , SiN, or the like is formed as an insulating layer between the gate and the emitter by a CVD method, a sputtering method, an electron beam evaporation method, a printing method, or the like. , In addition,
The gate electrode layer is formed of, for example, Ni, chromium, or tungsten by electroless plating, electroplating, a printing method, a sputtering method, a vapor deposition method, or the like, including a convex region covered with the insulating layer. Formed on the insulating layer, then C
The gate may be opened by using the MP method, the CDE method, the RIE method, the wet etching method, or the like and used as an emitter with a gate.

As described above, according to the present embodiment,
It is possible to easily form a plurality of sharp emitters with the same shape, and the field emission uniformity is good, the field emission rate is high, and the integration is easy. Obtainable.

(Second Embodiment) FIGS. 2A to 2
(C) is a process sectional view showing a manufacturing process of a second embodiment of a method for manufacturing a field emission cold cathode device according to the present invention.

First, Cu or N is applied to the polyimide sheet 2.
The conductive layer 5 such as i is integrally formed by a hot laminating method to produce a resin sheet having the conductive layer 5 on one surface. The conductive layer may be formed by a printing method, a vapor deposition method, a plating method, a sputtering method or the like other than the laminating method. next,
Similar to the first embodiment, a mold substrate 1 having a sharp concave portion is formed by electroplating, for example, Ni plating based on a master substrate (not shown) having a sharp convex portion.
It was created.

Next, the conductive layer 5 is formed on one side of the glass substrate 3.
After the polyimide sheet 2 on which is formed is placed, the mold substrate 1 is pressed (see FIG. 2B). In this case, while gradually applying pressure, the temperature is raised to 340 ° C. at a rate of 18 ° C./min. After reaching 340 ° C, 1 as it is
Let stand for 0 minutes and pressurize to 2-10 kg / cm ² . Next, the temperature is raised to 380 ° C., left for 20 minutes, then cooled while maintaining the pressure, and the polyimide sheet 2
Was deformed into a shape having a sharp convex portion, and at the same time, the polyimide sheet 2 having the conductive layer 5 on one side was laminated and adhered to the glass substrate 3. Next, the mold substrate 1 and the polyimide sheet 2 are separated from each other to obtain the polyimide sheet 2 including the sharp conductive protrusion, that is, the emitter 7. The die mold substrate 1 is used as a master die mold substrate, and thereafter, due to the pressure deformation of the polyimide sheet 2 by the die, the die mold substrate 1 has a large area having sharp projections with good reproducibility many times. A large amount of the resin sheet layer 2 can be obtained. This state is shown in FIG. At this time, the emitter section 7 may be formed as a cathode line, and the resin sheet layer may be formed of, for example, Au or P.
By mixing fine particles such as t, Ag, Cu, Mo, W, and ultrafine particles, imparting conductivity to the resin itself, or carbonizing the resin sheet layer, the resin sheet layer becomes a conductive layer. In this case, the cathode line may be formed on the back surface of the resin, that is, on the glass side.

Further, the cathode line may be previously formed on the glass substrate by means of printing, plating or the like. Further, this resin sheet conductive layer may be used as a core material resistance ballast layer. Furthermore, this resin sheet conductive layer may be bonded to a substrate other than a glass substrate, for example, a ceramic substrate, a glass epoxy substrate, or a metal substrate, or the cathode line may be previously formed on the glass supporting substrate. In that case, it is desirable to electrically separate a large number of aligned emitters by etching or the like in order to enhance the resistance ballast effect.

In the above embodiment, the resin sheet 2 is used.
Although the conductive layer 5 is formed on one side of the above, the conductive layers may be formed on both sides of the resin sheet 2 and the conductive layer on the glass substrate 3 side may be used as the cathode line layer.

Although it can be used as it is for various electronic devices, for example, SiO ₂ , SiN, or the like is formed as an insulating layer between the gate and the emitter by a CVD method, a sputtering method, an electron beam evaporation method, a printing method, or the like. , In addition,
The gate electrode layer is made of, for example, Ni, chromium, or tungsten by electroless plating, electroplating, a printing method, a sputtering method, a vapor deposition method, or the like, including a convex region covered with the SiO ₂ layer. Formed on ₂ layers, then CM
The gate may be opened by using the P method, the CDE method, the RIE method, the wet etching method or the like, and may be used as a gated emitter.

Also in the second embodiment, the same effect as that of the first embodiment can be obtained.

(Third Embodiment) FIGS. 3A to 3
(C) is a process sectional view showing a manufacturing process of a third embodiment of a method for manufacturing a field emission cold cathode device according to the present invention.

In the present embodiment, basically, similar to the first and second embodiments, electroplating such as Ni plating is performed based on a master substrate (not shown) having sharp protrusions. Although the die mold substrate 8 having a sharp concave portion is formed by using plating, unlike the first and second embodiments, the die mold substrate 8 is pressed against a curved support substrate 9 to be curved. It was In the present embodiment, the mold mold substrate 8 is curved by pressing it against the curved support substrate 9. However, the mold mold substrate 8 and the support substrate 9 may be curved separately and then bonded, or bonded. After that, both may be bent at the same time.

Next, after placing the polyimide sheet 2 having the conductive layer 5 formed on one side on the glass substrate 3, the curved mold mold substrate 8 bonded to the supporting material substrate 9 is
Press while rolling (see FIG. 3 (b)). In this case, while gradually applying pressure, the temperature is raised to 350 ° C. at a rate of 60 ° C./min. After reaching 350 ° C., it is left as it is for 1 minute and the pressure is increased to 0.2 to 0.8 kg / cm ² .

Next, the temperature is raised to 390 ° C., left for 40 seconds, and then cooled while maintaining the pressure as it is to transform the polyimide sheet 2 into a shape having a sharp convex portion 2a, and at the same time conductive on one side. The polyimide sheet 2 having the layer 5 was laminated and adhered to the glass substrate 3. Next, by separating the mold substrate 8 from the polyimide sheet 2, as compared with the case where a flat mold substrate is used,
It is possible to obtain the polyimide sheet 2 in which the shape of the sharp conductive protrusion, that is, the emitter 7, is highly uniform. The die mold substrate 8 is used as a master die mold substrate, and thereafter, due to the pressure deformation of the polyimide sheet by the die, the resin of a large area having a sharp convex portion is formed many times with good reproducibility. A large amount of sheets 2 can be obtained. This state is shown in FIG.

In this embodiment, the conductive layer 5 is provided on one side.
Although the resin sheet 2 having the above is used, the glass paste or the ceramic paste is applied on the glass substrate 3, and the substrate 8 having the recess is pressed against the glass paste or the ceramic paste layer on the glass substrate 3 to obtain the above glass paste or ceramic. The paste layer is injected into the recess to separate the first substrate and the second substrate to form a convex glass paste or ceramic paste substrate layer having a shape that converges toward the tip portion, and then the above The emitter section 7 may be formed on the convex glass paste or ceramic paste layer substrate.

In this case, for example, a mixture of ceramics or glass powder and a binder of a solvent and an organic additive is printed or applied on a glass substrate or a ceramic green sheet. Next, the curved die mold substrate 8 is rolled and pressed by a pressure of about 0.1 to 5 kg / cm ² , and the reaction is cured at 100 ° C. for 45 minutes or 1
After being dried and solidified at 20 ° C. for 5 hours, 400 ° C. for 3 hours to remove the binder, 400 to 550 ° C. in the case of glass, and 1300 to 1800 ° C. in the case of ceramic green sheet. Forming a substrate. Then, on the first substrate having the sharp protrusion,
As the emitter layer 5, for example, a layer made of molybdenum,
The field emission type cold cathode device including the above-mentioned convex portions is formed by a sputtering method, a vapor deposition method, a printing method, an electroplating method, or the like, and is sharp and rich in mass productivity. This state is shown in FIG.
Shown in. At this time, the emitter portion 7 may be formed as a cathode line, or the resin sheet layer 2 may be mixed with, for example, fine particles such as Au, Pt, Ag, Cu, Mo, W or ultrafine particles. When the resin sheet 2 is used as a conductive layer by making the resin itself conductive or by carbonizing the resin sheet layer, a cathode line may be formed on the back surface of the resin. Further, this resin sheet conductive layer may be used as a core material resistance ballast layer.

Further, this resin sheet conductive layer may be bonded to a substrate other than a glass substrate, for example, a ceramic substrate, a glass epoxy substrate or a metal substrate, or a cathode line may be formed in advance on a glass supporting substrate. Good. Also,
In that case, in order to enhance the resistance ballast effect, it is desirable to electrically separate a large number of arranged emitters by etching or the like.

Here, as ceramics, oxide type ceramics such as alumina (Al ₂ O ₃ ) and zirconia (ZrO ₂ ), silicon nitride (Si ₃ N ₄ ), aluminum nitride (AlN), silicon carbide (SiC). ) Or other non-oxide ceramics, or apatite (Ca ₅ (P
Any of O ₄ ) ₃ (F, Cl, OH)) can be used, and various sintering aids can be added to these ceramic powders in desired amounts.

As the above-mentioned sintering aid, silica (SiO ₂ 2), calcia (CaO), yttria (Y ₂ O ₃ ) and magnesia (MgO) are used for the alumina powder, and yttria (Y ₂ ) for the zirconia powder. O ₃ ) and cerium (C
e), dysprosium (Dy), ytterpium (Y
b) oxides of rare earth elements such as silicon nitride powder, yttria (Y ₂ O ₃ ) and alumina (Al ₂ O ₃ ) powder for silicon nitride powder, and oxides of Group 3A elements of the periodic table for aluminum nitride powder. In addition, boron (B), carbon (C), and the like can be added in desired amounts to the silicon carbide powder. As the glass powder, various glasses containing silicate as a main component and containing one or more of lead (Pb), sulfur (S), selenium (Se), alum, etc. can be used. Examples of the organic additive added to these ceramic or glass powders include urea resin, melamine resin, phenol resin, epoxy resin, unsaturated polyester resin, alkyd resin, urethane resin, eponite, and polysiloxy silicate. As means for reaction-curing these organic additives, there are heat curing, ultraviolet irradiation curing, X-ray irradiation curing and the like.

From the point of view of work and equipment, heat curing is most suitable, and unsaturated polyester resin is particularly preferable from the viewpoint of pot life. The content of the organic additive, in order to maintain the fluidity and moldability of the mixture of the ceramic or glass powder and the sintering aid, it is necessary to keep the viscosity high, while It is desirable to have sufficient shape-retaining property during curing. From this point of view, the content of the organic additive is 0.5 parts by weight or more based on 100 parts by weight of the ceramic or glass powder, and 35 parts by weight or less from the viewpoint of shrinkage of the molded body due to curing. Is more preferable, and 1 to 15 parts by weight is most preferable in view of shrinkage during firing.

The solvent is not particularly limited as long as it is compatible with the above organic additives, and examples thereof include aromatic solvents such as toluene, xylene, benzene and phthalic acid ester, hexanol and octanol. , Higher alcohols such as decanol and oxyalcohol, or esters such as acetic acid ester and glyceride can be used.

Above all, the above-mentioned phthalic acid ester, oxyalcohol and the like can be preferably used, and further, in order to gently volatilize the solvent, it is possible to use two or more kinds of the above-mentioned solvents in combination.

The printing and firing method may be used in the first and second embodiments.

Further, instead of the resin sheet 2 having the conductive layer 5 formed on one side thereof, a photosensitive material, preferably one containing an Ag-based photosensitive material, for example, Ag particles and inorganic material particles such as glass are dissolved in an organic solvent. You may use what was dried and made into the sheet form. By doing so, there is an advantage that the cathode line can be easily formed and patterned. For example, such a photosensitive sheet is integrally formed on a polyimide sheet, a polyester sheet, or the like, and the photosensitive sheet is brought into contact with a glass substrate to have a length of 1 to 2 m.
Laminate at a speed of / min at 80 to 100 ° C.

Next, after removing the polyimide sheet and the polyester sheet, the curved mold mold substrate 8 bonded to the support material substrate 9 is pressed against the photosensitive sheet while rolling (see FIG. 3B). ). The photosensitive sheet is transformed into a sharp conductive convex type, and then the mold substrate 8 and the photosensitive sheet layer 2 are separated. Next, after exposing using UV light and a mask having a desired cathode line pattern, it is developed with a 0.4 to 1.0% concentration Na ₂ Co ₃ solution or the like to obtain a desired cathode line pattern. Next, by baking at 540 to 600 ° C. for 15 to 20 minutes, it is possible to obtain the photosensitive sheet layer 2 in which the cathode lines having sharp protrusions are patterned.
This state is shown in FIG. The mold die substrate 8 is used as a master mold die substrate, and thereafter, by the pressure deformation of the polyimide sheet by the die,
It is possible to obtain a large number of photosensitive sheet layers having sharp projections having a large area with good reproducibility and many times.

Fine particles other than Ag, such as fine particles of Au, Pt, Cu, Mo, W, etc., or ultrafine particles may be mixed in the resin layer, or the resin itself may have conductivity.
When the resin layer is used as a conductive layer by carbonizing the resin layer, a cathode line may be formed on the back surface of the resin. Further, this resin conductive layer may be used as a core material resistance ballast layer. Further, this resin conductive layer may be bonded to a substrate other than the glass substrate, for example, a ceramic substrate, a glass epoxy substrate, or a metal substrate, or the cathode line may be previously formed on the glass supporting substrate. In that case, it is desirable to electrically separate a large number of aligned emitters by etching or the like in order to enhance the resistance ballast effect.

Further, as conductive materials, LaB6, Ti
A low work function or negative electron affinity material such as N, kabon, diamond, BN, fullerene, carbon nanotube, or SiC, or a filler alone or a material including at least one of these may be used.

The third embodiment can also obtain the same effects as the first embodiment.

(Fourth Embodiment) FIGS. 4A to 4
7C is a process sectional view showing the manufacturing process of the fourth embodiment of the method for manufacturing the field emission cold cathode device according to the present invention. FIG.

In the present embodiment, basically, similarly to the first to third embodiments, electroplating, for example, Ni plating is used to sharpen a master substrate having sharp projections. Although the mold mold substrate 10 having various concave portions is prepared, unlike the first to third embodiments, the mold mold substrate 10 is pressed against the cylindrical support substrate 10 'to form a roll. ing. In this embodiment,
Although the pressing die mold substrate 10 was curved on the cylindrical support substrate 10 ', the die mold substrate and the support substrate may be separately formed into a roll shape and then joined together.
Both may be rolled at the same time.

Next, after the polyimide sheet 2 having the conductive metal layer 5 formed on one side thereof is placed on the glass substrate 3, the roll-shaped mold substrate 10 joined to the cylindrical support substrate 10 'is Press while rolling continuously (Fig. 4
(See (b)). In this case, the glass substrate 3 is placed on infrared heating, a heating furnace, or a heater, the temperature of the sheet 2 is raised to 380 ° C., and the temperature is 0.2 to 20 kg / c.
It is pressed under a pressure of m ² and then cooled while separating the mold substrate 10 and the polyimide sheet 2 from each other to transform the polyimide sheet 2 into a shape having a sharp convex portion and at the same time to have a conductive layer 5 on one side. The polyimide sheet 2 was laminated and adhered to the glass substrate 3. As a result, as compared with the case where a flat mold substrate is used, it is possible to obtain a polyimide sheet layer 2 having a sharp and electrically conductive convex portion having a large area in a continuous shape, that is, having an emitter portion 11. .

Further, by forming it into a roll shape, even when it is desired to obtain a field emission type cold cathode having a large area, there is a great advantage that a concave die mold substrate having a small area may be produced. The die mold substrate 10 is used as a master die mold substrate, and thereafter, due to pressure deformation of the polyimide sheet 2 by the die, the die mold substrate 10 has a large area having sharp projections with good reproducibility many times. A large amount of resin sheets 2 can be obtained. This state is shown in FIG.

Also in this embodiment, the same effect as that of the first embodiment can be obtained.

Although only one supporting substrate 3 made of glass is shown in the above embodiment, a plurality of supporting substrates 3 are lined up and continuously supplied in a large amount to form a large area field emission type cold cathode device. May be produced. When a plurality of support substrates 3 are arranged, a cushioning material or a cleaning material is sandwiched between them to prevent damage to the glass end surface, and at the same time,
The field emission cold cathode device may be continuously formed while always cleaning the concave mold substrate.

In the above embodiment, the roll-shaped mold substrate is pressed against the polyimide sheet 2 to obtain a large-area field emission cold cathode device. Roll-plating is continuously performed to form a plating layer on the concave die mold substrate to obtain a convex conductive plating sheet, and as it is, or by adhering it to a glass substrate, etc., a large area field emission type cooling sheet is obtained. A cathode device may be obtained.

(Fifth Embodiment) FIG. 5A to FIG.
7B is a process sectional view showing the manufacturing process of the fifth embodiment of the method for manufacturing the field emission cold cathode device according to the present invention. FIG.

First, a sharp convex field emission cold cathode device manufactured by another manufacturing method such as a sharp convex field emission cold cathode device or a rotary vapor deposition method manufactured by trial in the first to fourth embodiments. On the surface of the insulating layer film 12, preferably the LPD method,
SiO ₂ by vapor deposition method, sputtering method, thermal oxidation method, etc.
The film 12 is formed.

Next, a resin insulating sheet 13 using at least one of a thermoplastic resin having a conductive layer 14 to be a gate layer on one side, an ultraviolet curable resin, or a thermosetting resin is prepared ( See FIG. 5 (a). Then, the sheet layer 13 is pressed against the sharply-projected emitter section to pierce and expose the tip of the projecting emitter section on the resin insulating sheet layer 13, so that mask exposure, alignment, etc. are required. Without this, a field emission type cold cathode device with a gate can be easily obtained (see FIG. 5B).

In this embodiment, the conductive layer 1 is provided on one side.
Although the resin insulation sheet 13 having 4 is used,
It is not necessary to have a conductive layer, and the gate layer may be formed after the insulating layer sheet is pierced to expose the tip of the emitter portion. Also, when the tip of the emitter section is exposed by breaking through, if the tip of the gate layer does not contact the tip of the emitter section,
It is not necessary to previously coat the surface of the emitter with the SiO ₂ layer 12.

Such a field emission type cold cathode device can be mass-produced and can be manufactured at a low cost, and at the same time, the field emission efficiency and its uniformity are greatly improved, and a large area and large electronic device, for example, a large flat plate. It is suitable for device play.

Next, the manufacturing process of the sixth embodiment of the method for manufacturing the field emission type cold cathode device according to the present invention will be described with reference to FIGS.
Will be described with reference to.

Pyramid type tetrahedron (base 4 μm square) with a height of about 3 μm on the entire surface of the silicon substrate by the transfer molding method.
Substrates 22 ₁ and 22 _{2 in} which convex shapes 22 a having a shape are arranged are formed. A plurality of these silicon convex type substrates 22 ₁ and 22 ₂ are attached to the glass substrate 2 with an epoxy thermosetting adhesive.
The first substrate 20 is formed by laminating it on the substrate 1 (FIG. 6).
(See (a)).

Next, the first substrate 20 is immersed in a Ni plating bath to form a Ni master layer 31 with a thickness of 3 μm having a concave pattern which is the reverse of the convex pattern of the first substrate 20 (see FIG. 6 ( See b)). Further, an epoxy resin layer 32 having a thickness of 10 μm is formed thereon and annealed at 100 ° C. for 30 minutes so that the epoxy resin is in a semi-cured state.
A second substrate 30 made of epoxy resin 32 is formed (see FIG. 6B). The epoxy resin layer 32 is brought into contact with a metallic roll 25 heated in advance to 150 ° C., the epoxy resin layer 32 is cured and adhered to the surface of the metal roll 25, and then the second roll 25 is rolled up while The substrate 30 is separated from the first substrate 20, and the second substrate 30 is wound on a roll 25 (see FIG. 6C).

Next, the roll 2 on which the second substrate 30 is wound
5 is immersed in a plating bath 50 to form a Ni plate-making layer 34, and the Ni plate-making layer 34 is bonded to a backing layer 8 made of a semi-cured resin,
Third substrate 39 comprising Ni plate-making layer 34 and backing layer 35
And the backing layer 3 with a second roll 38 that has been preheated.
After curing 5 and adhering it to the Ni plate-making film 34, the third substrate 39 is replaced with the second substrate 30, that is, the Ni master layer 31 and Ni.
The third substrate 39 is peeled off at the interface with the plate-making layer 34 and wound on a second roll 38 (see FIG. 7).

The second substrate 30 thus formed
A cross-sectional view of the above structure is shown in FIG.

A resin layer 32 and a Ni master layer 31 are formed on the second substrate 30 wound around the roll 25, and a Ni plate-making layer 34 is formed on the resin layer 32 and the Ni master layer 31 after the immersion process of a plating bath. (See FIG. 8A). Next, as shown in FIG. 8B, an insulating resin pattern 42 and a conductive paste pattern 43 containing silver paste as a main component are printed on a polypropylene film 41 having a thickness of 50 μm in advance, and the pattern is formed at 150 ° C. for 2 hours. Baking is performed to form the backing layer 44. The thickness of the backing layer 44 after firing was 10 μm.
Further, a resistance layer pattern 46 whose main component is carbon paste is printed on the insulating layer pattern 42 of the backing layer 44 so that the insulating layer pattern 45 is overlapped.
Preliminary baking is performed at 30 ° C. for 30 minutes to form the backing layer 47 in a semi-cured state. The thickness of the backing layer 47 after the calcination was 5 μm. Backing layers 44 and 47 formed on the base film 41
The backing portion 48 made of the laminated body is brought into contact with the second substrate 30 on the first roll 25 by the second roll 38 preheated to 150 ° C., and the backing layer 47 is fully cured to give the third substrate. After being bonded to the substrate 39 (see FIG. 8B), it is peeled off at the interface between the Ni master layer 31 and the Ni plate making layer 34, and the field emission type cold plate having the Ni plate making layer 34, the backing portion 48, and the underlayer 41 is formed. A cathode device 40 was obtained (see FIG. 8 (c)).

In the present embodiment, a silicon substrate having a convex pattern formed by the transfer molding method was used as the first substrate 20, but it was obtained by anisotropically etching a silicon wafer, for example. A substrate having an inverted pyramid concave pattern may be plated with Ni and the convex pattern after peeling may be used as the first substrate. Although Ni was used as the plating metal, Cu, Au,
The same effect can be obtained with a plated metal such as Co.

Next, the manufacturing process of the seventh embodiment of the field emission type cold cathode device according to the present invention will be explained with reference to FIGS. FIG. 9 is a schematic view showing the entire manufacturing process of the seventh embodiment, and FIGS. 10 to 11 are process cross-sectional views showing a part of the manufacturing process.

A plating master 31 having an array of inverted concave patterns from a Si substrate on which fine convex patterns are formed by the same manufacturing method as in the middle of the sixth embodiment.
Is used (not shown). Resin layer 32 on the plating master 31
Is formed and is wound up on the roll 58 in advance (see FIG. 9). While the plating master 31 is being wound by another roll, a resist layer 70 is applied to a desired region on the plating master 31 by a dispenser 60 and baked through an infrared furnace 62 (see FIGS. 9 and 10A). Next plating bath 6
4 to deposit the Ni plating 34 on the Ni master 31 (see FIGS. 9 and 10 (b)).
Through to remove the resist layer 70 and the plating layer thereon,
A plating plate 34a having a desired pattern is formed (see FIGS. 9 and 10 (c)). The backing portion 48 was attached to the plating plate 34a. The backing portion 48 includes a resistive layer 47, a conductive layer 44, and a base substrate 41, which are patterned as in the sixth embodiment. Plating master 31
The fine concave pattern array of the plating master 31 is reversed by winding the sheet on the plating master 31 side and the sheet 68 on the plating plate 34 side around the rolls 70 and 72 while peeling them off at the interface between the plating master 31 and the plate. A field emission cold cathode device 40 having a convex pattern array was obtained (see FIG. 11).

The field emission cold cathode devices obtained by the sixth and seventh embodiments also have good field emission uniformity, high field emission efficiency, and easy high integration.

[0076]

As described above, according to the present invention, the uniformity of field emission is good, the field emission efficiency is high, and
It is possible to obtain a large area field emission type cold cathode device which can be easily highly integrated.

[Brief description of drawings]

FIG. 1 is a sectional view of a manufacturing process according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a manufacturing process according to the second embodiment of the present invention.

FIG. 3 is a sectional view of a manufacturing process according to the third embodiment of the present invention.

FIG. 4 is a sectional view of a manufacturing process according to the fourth embodiment of the present invention.

FIG. 5 is a sectional view of a manufacturing process according to the fifth embodiment of the present invention.

FIG. 6 is a sectional view of a manufacturing process according to the sixth embodiment of the present invention.

FIG. 7 is a manufacturing step sectional view of a sixth embodiment of the present invention.

FIG. 8 is a manufacturing step sectional view of a sixth embodiment of the present invention.

FIG. 9 is a manufacturing step sectional view of a seventh embodiment of the present invention.

FIG. 10 is a manufacturing step sectional view of a seventh embodiment of the present invention.

FIG. 11 is a cross-sectional view showing the configuration of a field emission cold cathode part obtained according to a seventh embodiment.

FIG. 12 is a sectional view of a conventional manufacturing process.

[Explanation of symbols]

1 substrate 2 Polyimide sheet (resin sheet) 2a convex part 3 glass substrates 4 Emitter layer 5,14 Conductive layer 6,7 Emitter part 8,10 Mold mold substrate 9 Support substrate 10 'Cylindrical support substrate 12 Insulating film 13 Resin insulation sheet

Continuation of front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01J 9/02 H01J 1/304

Claims (3)

(57) [Claims] Forming a sharp recess to 1. A surface of the first substrate, and a resin layer using a thermoplastic resin, an ultraviolet curable resin, and at least one resin of the thermosetting resin, the resin Forming a resin sheet layer having a conductive layer formed on at least one surface of the layer on a second substrate, and pressing the first substrate against the second substrate having the resin sheet layer formed thereon. A step of applying the conductive layer and the resin sheet layer of the resin sheet layer into the concave portion of the first substrate, and deforming the resin sheet layer so as to have a sharp convex emitter portion on the surface; And a step of separating the first substrate from the resin sheet layer, the method for manufacturing a field emission cold cathode device. 2. The method for manufacturing a field emission cold cathode device according to claim 1, wherein the resin sheet layer is previously integrally formed with the conductive layer. 3. The step of forming an insulating film on the emitter section after the emitter section is formed, and the conductive layer of a resin insulating sheet having a conductive layer to be a gate layer on one surface thereof is formed. 2. The field emission according to claim 1 , further comprising a step of pressing the opposite side to the emitter section of the resin sheet to break through the resin insulating sheet to expose the convex emitter section. Method for manufacturing a cold cathode device.