JP3406222B2 - Active matrix substrate manufacturing method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to information terminal equipment such as a notebook personal computer, OA equipment, and A
The present invention relates to a method and an apparatus for manufacturing an active matrix substrate used in a liquid crystal display device used for V equipment and the like.

[0002]

2. Description of the Related Art A liquid crystal display device which utilizes the electro-optical effect of liquid crystal in a display device is currently used in various fields such as information terminal equipment such as a notebook personal computer, OA equipment and AV equipment. .

This liquid crystal display device is provided with gate signal lines (scanning lines), data signal lines (signal lines) intersecting with each other, a large number of pixel electrodes arranged in a matrix, and switching elements for controlling each pixel electrode. The active matrix substrate and a counter substrate provided with a color filter, a counter electrode, etc. were bonded so that their electrode forming surfaces face each other with a predetermined gap kept, and the liquid crystal layer was sandwiched between the two substrates. Have a configuration.

By the way, the manufacturing process of the active matrix substrate is complicated, and many manufacturing processes are inevitable. Therefore, defects such as contamination of foreign substances, short circuit between the pixel electrode and the gate signal line or data signal line, short circuit between the gate signal lines or between data signal lines, and the like are likely to occur, and it is extremely difficult to completely prevent this. Met. Therefore, it is very important to detect such defects at an early stage and correct them if necessary in order to improve the production yield.

Therefore, conventionally, after the active matrix substrate and the counter substrate are bonded to each other and liquid crystal is injected to fabricate a liquid crystal panel, a lighting inspection is performed to detect the presence or absence of line defects and point defects. If the defect could be corrected, it was corrected. For example, Japanese Patent Laid-Open No. 3-2094
Japanese Unexamined Patent Publication No. 22-52 discloses a method of irradiating a defective portion with laser light or the like in the state of a liquid crystal panel to perform correction.

This correction method will be described below with reference to FIG.

FIG. 7 is a sectional view showing an active matrix substrate in a conventional liquid crystal panel. In FIG. 7, 8 is a glass substrate, 5 is a short-circuit portion between gate signal lines, and 2
Is a data signal line, 3 is a pixel electrode, 9 is an insulating film between the gate signal line and the data signal line 2, 10 is a protective layer, and the switching elements are not shown.

If the short-circuited portion 5 between the gate signal lines as shown in FIG. 7 exists, the gate signal lines interfere with each other and appear as a line defect in the lighting inspection. This line defect can be corrected by removing a part of the short circuit portion 5. However, in order to prevent the lighting display state from being affected, it is necessary to prevent destruction of the protective layer and the like. Therefore, the laser-irradiable portion is only the portion indicated by the arrow ○ in FIG. Irradiation was not possible and there was a limit to the scope of modification.

Further, when a defect is detected in the state of the liquid crystal panel in which the active matrix substrate and the counter substrate are bonded together and liquid crystal is injected between the substrates, if the detected defect cannot be corrected, the liquid crystal panel There is also a problem that the production yield is reduced because the whole product must be discarded.

Therefore, in recent years, it has been desired to detect and correct defects such as leaks in the state of the active matrix substrate before being bonded to the counter substrate. Also, the detection of defects can be detected by performing image processing, resistance inspection, etc. in the state of the active matrix substrate.

By the way, in recent years, in order to increase the aperture ratio of a liquid crystal panel, for example, Japanese Patent Laid-Open No. 1-14822.
In Japanese Patent Laid-Open No. 4 (1994), a liquid crystal display device including an active matrix substrate having a structure as shown in FIG. 8 has been developed.

In this active matrix substrate, an interlayer insulating film 7 is provided on a glass substrate 8 so as to cover the gate signal lines 1, the data signal lines 2, switching elements (not shown) and the like, and pixel electrodes are formed on the interlayer insulating film 7. 3 is provided. In this configuration, the gate signal line 1 or the data signal line 2 and the pixel electrode 3 can be partially overlapped with each other through the interlayer insulating film 7, and therefore, the data signal line 2 and the pixel electrode 3 as shown in FIG. It is possible to increase the aperture ratio of the liquid crystal panel as compared with an active matrix substrate in which and are provided in the same layer.

[0013]

In the active matrix substrate shown in FIG. 8 described above, when a short circuit 5 between the gate signal lines 1 as shown in FIG. Irradiating laser light from the following causes the following problems.

That is, FIG. 1 is a sectional view taken along the line AA 'of FIG.
As shown in FIG. 0, the interlayer insulating film 7 and the pixel electrode 3 existing in the upper layer of the short circuit portion 5 between the gate signal lines are also simultaneously removed by the laser irradiation, so that a liquid crystal alignment defect occurs in the removed portion or the lower layer Inadequate protection. Further, even if the short-circuited portion 5 can be removed as it is, since the laser irradiation mark becomes a taper type due to the influence of the interlayer insulating film 7, the trimming accuracy is poor, and the laser irradiation possible area becomes very narrow, and the desired area is removed. There was also a problem that it was difficult to do.

It is considered that such a problem similarly occurs when a short circuit occurs between the data signal lines. The present invention has been made to solve the problems of the prior art as described above. It is an object of the present invention to provide an active matrix substrate manufacturing method capable of surely correcting a part and a manufacturing apparatus used for the implementation.

[0016]

According to a method of manufacturing an active matrix substrate of the present invention , a plurality of scanning wirings and a plurality of signal wirings are provided on a substrate so as to intersect each other with an insulating film interposed therebetween, and both wirings are provided. A switching element near the intersection
Respectively provided, a method for fabricating the active matrix substrate in which the scanning lines, and interlayer insulating film is provided so as to cover the signal wiring and the switching element is a pixel electrode on the layer <br/> insulating film is provided a method, to form a plurality of scan lines and a plurality of signal lines on the substrate so as to intersect with each other through an insulating film, a step of in the vicinity of an intersection of the two lines forming the switching elements, respectively, the following I
In, formed when a short circuit occurs between any one of the scan lines or between any of the signal wiring, and removing the short-circuit portion by laser irradiation, then removing portion by the laser irradiation, the substrate A step of forming an interlayer insulating film so as to cover the formed scanning wiring, the signal wiring, and the switching element, and a pixel electrode is formed on the formed interlayer insulating film.
Forming step, thereby achieving the above object.

In the method for manufacturing an active matrix substrate of the present invention , a plurality of scanning wirings and a plurality of signal wirings are provided on a substrate so as to intersect each other with an insulating film interposed therebetween, and a switching element is provided in the vicinity of the intersection of both wirings. there are provided respectively, a method for producing an active matrix substrate in which the scanning lines, and interlayer insulating film is provided so as to cover the signal wiring and the switching element is a pixel electrode on the interlayer insulating film is provided , to form a plurality of scan lines and a plurality of signal lines on the substrate so as to intersect with each other through an insulating film, forming a switching element in the vicinity of an intersection of the two lines, respectively, then either
There is a short circuit between the scan wires or between any of the signal wires.
When removing the short-circuited portion by laser irradiation
Then, if a short circuit occurs between the scanning wiring and the signal wiring due to the removal of the short-circuited portion , laser irradiation causes
And cutting the scanning lines or the signal lines on both sides of the short circuit portion, and then, a step of connecting the redundant wiring both side portions of the cut portions of cut lines, then cut portion formed by laser irradiation, To cover the connection portion by the redundant wiring, the scanning wiring, the signal wiring and the switching element.
Process of forming interlayer insulating film and on the formed interlayer insulating film
And a step of forming a pixel electrode, thereby achieving the above object. In this case, the thickness of the interlayer insulating film is preferably 1 to 3 μm.

The method of manufacturing an active matrix substrate of the present invention is a manufacturing apparatus used in the method of manufacturing an active matrix substrate of the present invention, in which an XY stage on which a substrate is mounted and laser processing arranged above the stage are processed. Means, a control means for controlling an irradiation area of the laser light oscillated from the laser processing means, and a condensing means for enlarging or reducing the laser light passing through the control means, and further the laser irradiation In order to perform resistance measurement on the removal part by the laser, the cutting part by the laser irradiation, or the connection part by the redundant wiring, first and second resistance measurement probes arranged at both ends of the measurement part are provided. By doing so, the above object is achieved.

One of the first and second resistance measuring probes may be fixed to the XY stage, and the other may be movable according to the laser light irradiation area.

It is also possible to further include an observation means for observing the laser light irradiation portion, and to confirm the position of the second probe by the observation means.

The operation of the present invention will be described below.

In the present invention, as shown in FIG. 1, scanning wiring (gate signal line) 1 and signal wiring (data signal line)
2 and a switching element (TFT), an interlayer insulating film 7 is provided, and a pixel electrode 3 is provided on the interlayer insulating film 7. In manufacturing an active matrix substrate, a short circuit between gate signal lines or a data signal is generated. When a short circuit occurs between the lines, as shown in FIG. 2, the short circuit portion 5 between the gate signal lines or the short circuit portion between the data signal lines is irradiated with laser and removed before the formation of the interlayer insulating film.

As shown in FIG. 3, since the interlayer insulating film 7 is also formed on the removed portion 6 by laser irradiation, the lower layer is in a protected state, and liquid crystal alignment failure may occur in the removed portion 6. Absent.

Furthermore, when laser irradiation is performed from the back surface of the liquid crystal panel to remove the short-circuited portion as in the conventional case, the fragments are scattered around to cause new defects or defects in the peripheral film. According to the present invention, such a defect does not occur and the correction can be surely performed.

Here, as shown in FIG. 4, when the data signal line 2 exists above the short circuit portion 5 between the gate signal lines 1, or when the data signal line 2 exists below the short circuit portion between the data signal lines. In this case, if the short-circuited portion is removed by laser irradiation, the insulating film 9 between the gate signal line and the data signal line may be destroyed, resulting in a short circuit 6A between the gate signal line and the data signal line. Alternatively, a short circuit may occur between the gate signal line and the data signal line due to a defective film formation of the insulating film 9.

Therefore, in such a case, both sides 6B (the signal input side and the opposite side of the signal input side) of the short-circuited portion 6A.
By disconnecting the gate signal line or the data signal line with each other and connecting both sides of the disconnection portion 6B of the signal line with a redundant wiring or the like, a short circuit between the gate signal line and the data signal line can be corrected.

By forming an interlayer insulating film thereon, it is possible to protect the cut portion and the connection portion by the redundant wiring with the interlayer insulating film.

In order to further improve the reliability of repair, it is important to confirm whether the repair is sufficient before forming the interlayer insulating film and not pass the defective product to the subsequent process. Further, if the removal of the short-circuit portion for correction or the connection by the redundant wiring is insufficient, the correction may be necessary before the formation of the interlayer insulating film. Therefore, it is desirable to use a manufacturing apparatus equipped with a system that can confirm the success or failure of the correction immediately after the correction.

Therefore, as shown in FIG. 5, the active matrix substrate manufacturing apparatus of the present invention includes an XY stage 22.
A laser oscillator 11, a laser beam control unit such as an electric slit 17, and a condensing unit such as a condensing lens 19.
Further, a first resistance measuring probe 27 and a second resistance measuring probe 28 are provided.

According to this apparatus, the substrate 20 is mounted on the XY stage 22, laser light is irradiated to remove the short-circuited portion, the gate signal line or the data signal line is cut, and the redundant wiring is connected. After that, the resistance of the correction section can be measured immediately after the correction using the first resistance measurement probe 27 and the second resistance measurement probe 28 to confirm the correction state.

For example, as shown in FIG. 6, a conductive pattern (for example, a short ring) 81, 82 for short-circuiting the first resistance measuring probe 28 to all terminals of the liquid crystal panel.
83 to remove the second resistance measuring probe 27,
By connecting to the inspection terminals 84, 85, 86, 87 of the disconnected or connected gate signal line or data signal line, the resistance measuring device 29 is used to remove the short circuit part, the gate signal line or the data signal line. It is possible to measure the resistance of the disconnection part or the connection part with the redundant wiring.

Here, in order to correspond to the formation position of the short ring and the like on the active matrix substrate, the first
By fixing the resistance measuring probe 28 of 1 to the XY stage, the resistance can be efficiently measured.

By moving the probe, the connecting position of the probe can be confirmed by using the correction monitor for observing the laser irradiation spot.

[0034]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. In the following drawings, the parts having the same functions as those of the conventional art will be described with the same numbers.

FIG. 1 is a cross-sectional view for explaining the method of manufacturing the active matrix substrate of this embodiment.

In this active matrix substrate, a plurality of gate signal lines 1 functioning as scanning wirings and a plurality of data signal lines 2 functioning as signal wirings are provided so as to intersect each other on a substrate 8 made of glass or the like. A TFT as a switching element is provided near the intersection of both signal lines. An interlayer insulating film 7 is provided thereon so as to cover the gate signal line 1, the data signal line 2, the TFT, and the like.
The pixel electrode 3 is provided on the interlayer insulating film 7.

In the active matrix substrate of this embodiment, when a short circuit occurs between the gate signal lines, an interlayer insulating film 7 made of an acrylic resin having a thickness of about 1 μm to 3 μm exists in the upper layer of the short circuit portion. In the case of a reflection type liquid crystal display device, the pixel electrode 3 made of a conductive film having a high reflectance such as Al is used. In the case of a transmission type liquid crystal display device, the pixel electrode 3 made of a transparent conductive film such as ITO has a small thickness. 800 nm ~
It is provided with a thickness of about 1000 nm. Therefore, it is not desirable to remove the short-circuited portion by performing laser irradiation from the front surface or the back surface of the substrate in this state.

Therefore, in the present embodiment, in the manufacturing process of the active matrix substrate, as shown in FIG. 2, the short-circuit portion 5 is detected and laser irradiation is performed before the interlayer insulating film is formed, and the short-circuit portion is irradiated. A correction is made by removing part 6 of the. After that, as shown in FIG. 3, an interlayer insulating film 7 is formed so as to cover the removed portion 6 and the like by laser irradiation. This can protect the lower layer and prevent unevenness on the substrate surface. Laser irradiation at this time may be performed from the front surface side of the substrate or the back surface side of the substrate as long as laser light sufficiently absorbed by the gate signal line is used.

2 and 3 are sectional views showing a portion different from FIG. 1, and when the data signal line 2 does not exist above the short-circuit portion 5 between the gate signal lines 1 as described above, It is possible to remove the short-circuited portion 5 of the gate signal line 1 by laser irradiation and make a correction.

However, as shown in FIG. 4, when the data signal line 2 exists at the repaired portion 6A, the insulating film 7 between the gate signal line 1 and the data signal line 2 is destroyed and the gate signal line 2 is destroyed. 1 and the data signal line 2 may be short-circuited. However, in FIG. 4, a short-circuit portion 5 is shown between the gate signal line 1 and the additional capacitance wiring 11 for simplification of description, and the pixel electrode 3 on the left side of the drawing is omitted.

When such a short circuit occurs between the gate signal line 1 and the data signal line 2, the data signal line 2 is cut at the portions 6B, 6B on both sides of the correction point 6A. This can prevent a short circuit between the gate signal line 1 and the data signal line 2 from affecting other pixels. Then, both sides of the cutting portions 6B and 6B (the upper portion of the cutting portion 6B above the correction portion 6A and the cutting portion 6B below the correction portion 6A).
By connecting the lower part) by a redundant wiring or the like (not shown), a signal is supplied to the pixels ahead of the disconnecting section 6B.

[0042] In the present embodiment, from about 20mJ / cm ² ~25mJ / cm ² energy density by using a YAG laser,
By performing irradiation with a pulse width of about 8 ns to 10 ns, the short-circuited portion of the gate signal line 1 is removed and the data signal line 2 is removed.
Are cut, and redundant wirings made of Ta, Al, Ti or the like are provided to connect both sides of the cut portion 6B of the data signal line 2.

Further, after the correction and before the formation of the interlayer insulating film 7, the resistance of the correction portion is measured and the correction state is managed, so that the correction can be further ensured.

In the manufacture of the active matrix substrate of this embodiment, the correction by laser irradiation and the resistance measurement of the correction portion can be performed by using, for example, a device as shown in FIG.

In FIG. 5, 11 is a YAG laser oscillator, 12 is a wavelength conversion element, and 13 is an energy attenuation filter. Reference numeral 14 is a half mirror, 15 and 16 are a light source and a CCD camera for photographing a laser light irradiation spot, 17 is an electric slit for controlling the laser light irradiation area, and 18 is the intensity of the irradiated laser light. The power detector 19 is a condenser lens for enlarging or reducing the emitted laser light. 20 is a substrate to be inspected, 21
Is a backlight for illuminating the substrate to be inspected, and 22 is an XY stage that can be moved in two directions orthogonal to each other. Reference numeral 23 is an interface, 24 is a control unit, 25 is an external controller, and 26 is a monitor.

The YAG laser oscillator 11 is arranged on the XY stage 22 on which the correction substrate is mounted, and the laser light of 1060 nm (the basic wavelength of the YAG laser) emitted from the YAG laser oscillator 11 passes through the wavelength conversion element 12. Is converted into a light intensity, and its intensity is adjusted by the energy attenuation filter 13.

The laser light passed through the energy attenuating filter 13 is a half mirror 14 and an electric slit 17.
Then, the inspected substrate 20 on the XY stage is irradiated by the condenser lens 19.

The YAG laser oscillator 11, wavelength conversion element 12, energy attenuation filter 13, light source 15, C
CD camera 16, electric slit 17, power detector 1
8, the condenser lens 19 and the XY stage 22 are connected via an interface 23 to a control unit 24 including a CPU, ROM and RAM. These operate in response to a command from the external controller 25, and the state of the corrected portion imaged by the CCD camera 16 is displayed on the monitor 26.

Further, this apparatus is provided with a first resistance measuring probe 28 attached to the XY stage 22 and a second resistance measuring probe 27 provided on the stage for controlling the focus position of the laser. These are connected to the resistance measuring device 29.

For example, when a short circuit 5 between the gate signal lines 1 as shown in FIGS. 2 and 3 or a short circuit 6A between the gate signal line 1 and the data signal line 2 as shown in FIG. 4 occurs. The correction and the correction unit using the apparatus shown in FIG. 5 can be performed as follows.

First, in the manufacturing process of the active matrix substrate, short circuit defects are detected by image processing, resistance inspection, etc. in a state before the gate signal lines, data signal lines, TFTs, etc. are formed and before the interlayer insulating film is formed. The substrate thus set is set in the apparatus by the transfer means. Here, if the position of the defective portion is known in advance, the XY stage 22
Is controlled to roughly match the laser irradiation area with the defective portion.

Next, while observing the monitor 26, the external controller 25 controls the XY stage 22, the electric slit 17, the condenser lens 19 and the like to finely adjust the laser irradiation area, and perform the laser irradiation to perform the gate signal line. The short circuit part 5 between them is removed. Further, when a short circuit occurs between the signal signal lines 1 and the data signal lines 2 due to destruction of the insulating film 9 or the like, laser irradiation is performed to connect the data signal lines 2 to both sides 6B of the short circuit portion. Cut and connect both sides with redundant wiring.

Subsequently, the first resistance measuring probe 28 is brought into contact with the short ring of the substrate, and the second resistance measuring probe 27 is ahead of the repaired portion (on the opposite side of the repaired portion from the short ring). By contacting the gate signal line portion of, the resistance between the gate signal lines can be measured to confirm the correction status of the short-circuited portion.

Then, the first resistance measuring probe 28 is brought into contact with the short ring of the substrate, and the second resistance measuring probe 27 is located before the repaired portion (on the opposite side of the repaired portion from the short ring). By contacting the data signal line portion, the resistance of the data signal line can be measured to check the disconnection state or the connection state by the redundant wiring.

Specifically, as shown in FIG. 6, in an active matrix substrate in which a plurality of gate signal lines 1 and data signal lines 2 are provided so as to intersect with each other, the gate signal lines may be changed according to the purpose of measurement. The odd resistance common test pad 81 provided in the odd column of 1, the even common test pad 82 provided in the even column, and the data signal line common test pad 83 provided in the data signal line 2 are connected to the first resistance measuring probe 28. Contact

Then, the gate signal line inspection pads 84 and 85 or the data signal line inspection pads 8 corresponding to the correction section 6C are provided.
Second, after confirming 6, 87 on the laser correction monitor 26
The resistance between the gate signal lines or the resistance of the data signal line is measured by contacting the resistance measuring probe 27.

Here, if the resistance value between the odd common inspection pad 81 and the gate signal line inspection pad 84 or the resistance value between the even common inspection pad 82 and the gate signal line inspection pad 85 is measured, 84 Since the resistance between the gate signal lines corresponding to and 85 can be measured, the correction state of the short-circuited portion can be confirmed.

Further, if the resistance value between the data signal line inspection pad 86 or 87 and the data signal line common inspection pad 83 is measured, the resistance of the data signal line corresponding to 86 or 87 can be measured. The connection status due to redundant wiring can be confirmed.

In the above embodiment, the case where the gate signal lines are short-circuited has been described. However, also in the case where the data signal lines are short-circuited, the same correction is performed before the formation of the interlayer insulating film and the active matrix substrate. Can be produced.

Further, in manufacturing an active matrix substrate provided with additional capacitance wiring as shown in FIG.
Even when a short circuit occurs between the additional capacitance line and the gate signal line or a short circuit occurs between the additional capacitance line and the data signal line, the active matrix substrate can be manufactured by performing the same correction.

[0061]

As described above in detail, in the case of the present invention, the short-circuited portion between the gate signal lines or the data signal lines is irradiated with laser before the formation of the interlayer insulating film to remove a part thereof. By forming the interlayer insulating film also on the removed portion in a later step, it is possible to prevent the damage of the pattern that has been conventionally caused and prevent the defect from recurring, so that the reliability of the correction is improved. be able to. Particularly, in the reflective liquid crystal display device, since a metal thin film such as Al is used as the pixel electrode of the active matrix substrate, a short circuit with the lower layer or the counter electrode is likely to occur, but these can be prevented, which is extremely It is valid. Furthermore, since the unevenness of the pixel portion can be reduced, defective alignment of the liquid crystal can be reduced.

According to the second aspect of the present invention, the short circuit between the gate signal line and the data signal line is corrected before the formation of the interlayer insulating film, and the interlayer insulating film is also formed on the corrected portion in a later step. As a result, it is possible to prevent the conventional pattern from being damaged and prevent the defect from recurring, so that the reliability of the correction can be improved. Further, since the unevenness of the pixel portion can be reduced, defective alignment of liquid crystal can be reduced. Furthermore, when the data signal line is present above the short-circuited portion between the gate signal lines or when the gate signal line is present above the short-circuited portion between the data signal lines, the laser light irradiation eliminates the short-circuited portion and the gate signal line is removed. Although the insulating film between the data signal line and the data signal line may be destroyed to cause a short circuit between the gate signal line and the data signal line, this short circuit can also be corrected. Therefore, the correction applicable range can be expanded to further improve the yield in the production of the active matrix substrate.

Further, in the case of the active matrix substrate manufacturing apparatus of the present invention, it is possible to measure whether or not the correction is sufficient by measuring the resistance of the correction portion immediately after the correction, so that it is a defective product. The production loss can be suppressed to the minimum by not flowing the product in the subsequent process, and the cost can be significantly reduced.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of an active matrix substrate manufactured by the present invention.

FIG. 2 is a cross-sectional view illustrating the method for manufacturing the active matrix substrate according to the embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating the method of manufacturing the active matrix substrate according to the embodiment of the present invention.

FIG. 4 is a plan view illustrating the method for manufacturing the active matrix substrate according to the embodiment of the present invention.

FIG. 5 is a schematic diagram showing an active matrix substrate manufacturing apparatus according to an embodiment of the present invention.

FIG. 6 is a schematic view showing an apparatus for manufacturing an active matrix substrate which is an embodiment of the present invention.

FIG. 7 is a cross-sectional view for explaining a conventional defect correction method for an active matrix substrate.

FIG. 8 is a cross-sectional view of another conventional active matrix substrate.

FIG. 9 is a cross-sectional view for explaining another conventional defect correction method for an active matrix substrate.

10 is a cross-sectional view taken along the line A-A ′ in FIG.

[Explanation of symbols]

1 Gate signal line 2 Data signal line 3 pixel electrodes 4 TFT 5 Short circuit part 6 Laser removal section 7 Interlayer insulation film 8 glass substrates 9 Insulating film between gate signal line and data signal line 10 Protective film 11 YAG laser oscillator 12 Wavelength conversion element 13 Energy attenuation filter 14 Half mirror 15 light source 16 CCD camera 17 Electric slit 18 Power detected 19 Condensing lens 20 Inspected board 21 Backlight 22 XY stage 23 Interface 24 Control unit 25 External controller 26 monitors 27 First resistance measuring probe 28 Second resistance measuring probe 29 Resistance measuring instrument

─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) G02F 1/1368 H01L 29/786

Claims (3)

(57) [Claims] To 1. A substrate, a plurality of scan lines and a plurality of signal lines are provided so as to intersect with each other through an insulating film, the switching elements are provided <br/> respectively in the vicinity of an intersection of the two lines, the scanning lines, a method of manufacturing an active matrix substrate with an interlayer insulating film is provided so as to cover the signal wiring and the switching element is a pixel electrode on the interlayer insulating film is provided, on the substrate a plurality of scan lines and a plurality of signal lines so as to form so as to intersect with each other through an insulating film,
Forming respective both lines of intersection near the switching element, then if a short circuit occurs between any one of the scan lines or between one of the signal line, removing the shorted portion by laser irradiation Then, a step of forming an interlayer insulating film so as to cover the removed portion by the laser irradiation, the scanning wiring formed on the substrate, the signal wiring, and the switching element, and a step of forming an interlayer insulating film on the formed interlayer insulating film. A method of manufacturing an active matrix substrate, the method comprising: forming a pixel electrode . To 2. A substrate, a plurality of scan lines and a plurality of signal lines are provided so as to intersect with each other through an insulating film, the switching elements are provided <br/> respectively in the vicinity of an intersection of the two lines, the scanning lines, a method of manufacturing an active matrix substrate with an interlayer insulating film is provided so as to cover the signal wiring and the switching element is a pixel electrode on the interlayer insulating film is provided, on the substrate a plurality of scan lines and a plurality of signal lines so as to form so as to intersect with each other through an insulating film,
Forming a switching element, respectively in the vicinity of an intersection of the two lines, then, between any of the scan lines or one of the signal lines
If there is a short circuit between the
Removing the parts, then, if a short circuit between the scanning lines and the signal lines by removal of the short-circuit portion has occurred, the scanning lines or the both sides of the <br/> short circuit portion by laser irradiation and cutting the signal wires, then, a step of connecting the redundant wiring both side portions of the cut portions of cut lines, then cutting unit, connection according to the redundant wiring, the scanning lines by laser irradiation, the A method of manufacturing an active matrix substrate, comprising: a step of forming an interlayer insulating film so as to cover the signal wiring and the switching element; and a step of forming a pixel electrode on the formed interlayer insulating film . 3. The method for manufacturing an active matrix substrate according to claim 1, wherein the interlayer insulating film has a thickness of 1 to 3 μm.