JP3404780B2 - Method for manufacturing InSb thin film element - Google Patents
Method for manufacturing InSb thin film elementInfo
- Publication number
- JP3404780B2 JP3404780B2 JP01459393A JP1459393A JP3404780B2 JP 3404780 B2 JP3404780 B2 JP 3404780B2 JP 01459393 A JP01459393 A JP 01459393A JP 1459393 A JP1459393 A JP 1459393A JP 3404780 B2 JP3404780 B2 JP 3404780B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- insb thin
- substrate
- manufacturing
- mica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 54
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title description 18
- 238000000034 method Methods 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims description 50
- 239000010445 mica Substances 0.000 claims description 33
- 229910052618 mica group Inorganic materials 0.000 claims description 33
- 239000010408 film Substances 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 16
- 238000000206 photolithography Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 13
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- -1 InSb compound Chemical class 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】この発明は、磁気抵抗素子やホー
ル素子などに用いられるＩｎＳｂ薄膜素子の製造方法に
関する。
【０００２】
【従来の技術】従来より、ＩｎＳｂ化合物半導体はその
ホール移動度（μ）が高く、ホール素子や磁気抵抗素子
の材料として用いられる。このようなホール素子や磁気
抵抗素子などの磁気センサは、センサ信号処理回路との
整合性を高めるため、例えば数百Ω〜数ｋΩ程度が必要
とされる。しかし、ＩｎＳｂは元来１０-3Ωｃｍオーダ
の低抵抗率の材料であるため、またより微細なパターン
形成を容易にするためにその薄膜化が有効である。
【０００３】ここで、従来のＩｎＳｂ薄膜素子の製造方
法を図７〜図８を基に説明する。図７に示すように、ま
ずマイカ基板１上にいわゆる三温度法（ＩｎボートとＳ
ｂボートおよび基板の三つの温度をそれぞれ制御して真
空蒸着する方法）やＭＢＥ法によってＩｎＳｂ薄膜２を
成膜し、その後、図８に示すように、ガラスやフェライ
トなどの基板９に対し、ＩｎＳｂ薄膜２を対向させて、
樹脂層１０を接着層として接着し、その後、図９に示す
ようにマイカ基板１を機械的または化学的に剥離するこ
とによって、ガラスやフェライトなどの基板９上にＩｎ
Ｓｂ薄膜２を形成する。その後、フォトリソグラフィに
よりＩｎＳｂ薄膜２をホール素子や磁気抵抗素子として
用いる所定のパターンに形成する。更に必要に応じて表
面に保護膜を形成し、最終的に基板を分割して個別の素
子として用いる。
【０００４】
【発明が解決しようとする課題】ところが、このような
従来のＩｎＳｂ薄膜の製造方法では、マイカ基板を剥離
する際、ＩｎＳｂ薄膜が損傷を受ける虞があり、その結
果所期の特性を得ることができない場合があり、歩留り
低下の原因の一つとなっていた。また、ＩｎＳｂ薄膜２
は基板９に対し樹脂層１０のみによって支持されている
ため、ＩｎＳｂ薄膜２の膜強度が低く、その信頼性が必
ずしも高くない。また、保護膜を形成した場合でも、そ
の保護膜とＩｎＳｂ薄膜との密着性は元々低く、しかも
その保護膜形成時の応力がＩｎＳｂ薄膜に影響を与え、
最悪の場合には、ＩｎＳｂ薄膜が接着用の樹脂層から剥
離する虞がある。
【０００５】この発明の目的は、このような従来の問題
を解消して、信頼性の高いＩｎＳｂ薄膜素子を容易に得
ることのできるＩｎＳｂ薄膜素子の製造方法を提供する
ことにある。
【０００６】
【課題を解決するための手段】この発明のＩｎＳｂ薄膜
素子の製造方法は、マイカ基板の一方の面にＩｎＳｂ薄
膜を成膜する工程と、前記マイカ基板のＩｎＳｂ薄膜非
形成面を第１の支持基板に接着する工程と、前記ＩｎＳ
ｂ薄膜をフォトリソグラフィにより一定パターンに形成
する工程と、前記マイカ基板上に電極を形成する工程
と、前記マイカ基板上に保護膜を形成する工程と、この
保護膜を形成した面を第２の支持基板に対向させて接着
する工程と、前記マイカ基板の層途中を剥離面として第
１の支持基板を前記マイカ基板の一部とともに剥離する
ことにより、前記ＩｎＳｂ薄膜上に前記マイカ基板の一
部の層を残す工程、とを順に行うことを特徴とする。
【０００７】
【作用】この発明のＩｎＳｂ薄膜素子の製造方法では、
まずマイカ基板の一方の面にＩｎＳｂ薄膜が成膜され、
このＩｎＳｂ薄膜の形成されたマイカ基板のＩｎＳｂ薄
膜被形成面が第１の支持基板に接着される。この第１の
支持基板はその後のＩｎＳｂ薄膜をパターン化する際お
よび第２の支持基板に接着する際、そのハンドリングを
容易にするとともにマイカ基板およびＩｎＳｂ薄膜に対
し不要な応力が加わるのを防止する。続く工程でＩｎＳ
ｂ薄膜がフォトリソグラフィにより一定パターンに形成
され、電極が形成され、さらに保護膜が形成される。続
いて、この保護膜の形成された面が第２の支持基板に対
向して接着される。その後、第１の支持基板がマイカ基
板の層途中を剥離面として剥離される。その際、マイカ
基板の一部が保護膜としてＩｎＳｂ薄膜上に残される。
【０００８】以上の製造方法によれば、マイカ基板の一
部が第２の支持基板側に残り、それが保護膜として作用
する。従って、マイカ基板を完全に剥離した場合のＩｎ
Ｓｂ薄膜の損傷の問題およびＩｎＳｂ薄膜と支持基板と
の接着性の問題が解消され、信頼性の高いＩｎＳｂ薄膜
素子を容易に製造できるようになる。
【０００９】
【実施例】この発明の実施例であるＩｎＳｂ薄膜素子の
製造方法を工程順に図１〜図６を参照して説明する。
【００１０】《第１工程》まず、図１に示すように、マ
イカ基板１上にＩｎＳｂ薄膜２を三温度法により成膜す
る。
【００１１】《第２工程》図２に示すように、ガラス等
の無機材料やステンレススチール等の金属板などから成
る第１の支持基板３に対し、マイカ基板１のＩｎＳｂ薄
膜を形成していない面をエポキシ，フェノール，アクリ
レート系樹脂の樹脂層４を介して接着する。
【００１２】《第３工程》図３に示すように、フォトリ
ソグラフィによりＩｎＳｂ薄膜２を一定パターンにパタ
ーン化し、さらに一定パターンの電極５を形成する。
【００１３】《第４工程》図４に示すように、その表面
にＳｉ化合物と添加剤および有機溶剤から成る塗布液を
塗布し、焼結することによってＳｉＯ2 膜（ＳＯＧ膜）
６を形成する。この保護膜６の形成方法としてその他に
スパッタリング法、ＣＶＤ法を用いることもでき、無機
膜、有機膜を問わず、不純物の含有率が低く防湿効果の
高いものであれば良い。
【００１４】《第５工程》その後、図５に示すように、
フェライト，ガラス，Ｓｉ，ＧａＡｓなどから成る第２
の支持基板７に対し保護膜６の形成面を第２工程で行っ
たと同様の方法により、樹脂層８を介して接着する。
【００１５】《第６工程》図６に示すように、マイカ基
板１の層からマイカ基板１とともに第１の支持基板３を
剥離する。その際、マイカ基板の一部は数〜数十μｍの
マイカ層１’として残る。
【００１６】その後、ダイシングソーにより素子単体を
切出し、リードフレーム接着部をメタルマスキングによ
るＲＩＥまたはイオンビーム法などによりエッチング
し、その素子をリードフレームに取り付ける。なお、ス
パッタリング法により素子端部に引出電極を形成して、
表面実装型の素子を形成してもよい。
【００１７】この発明の実施例により、ＩｎＳｂ薄膜素
子を作成したところ、３ｋＧの磁束密度における磁気抵
抗変化率は３．４、２０〜６０℃における入力抵抗温度
係数は−１．２％／℃を得た。
【００１８】
【発明の効果】この発明によれば、ＩｎＳｂ薄膜を成膜
したマイカ基板の一部を保護膜としてそのまま用いるこ
とができるため、素子表面に対する新たな保護膜の形成
工程が不要となり、同時にＩｎＳｂ薄膜の信頼性を高め
ることができる。また、マイカ基板の剥離の際、マイカ
基板の一部を残存させるため、ＩｎＳｂ薄膜の損傷を防
止することができ、所期の特性を有するＩｎＳｂ薄膜素
子を高い歩留りで製造できるようになる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an InSb thin film element used for a magnetoresistive element or a Hall element. 2. Description of the Related Art Conventionally, an InSb compound semiconductor has a high hole mobility (μ) and is used as a material of a Hall element or a magnetoresistive element. Such a magnetic sensor such as a Hall element or a magnetoresistive element requires, for example, about several hundred Ω to several kΩ in order to improve the matching with the sensor signal processing circuit. However, since InSb is originally a material having a low resistivity on the order of 10 −3 Ωcm, it is effective to reduce its thickness to facilitate formation of a finer pattern. Here, a method of manufacturing a conventional InSb thin film element will be described with reference to FIGS. As shown in FIG. 7, first, a so-called three-temperature method (In boat and S
b) A method of performing vacuum deposition by controlling the three temperatures of the boat and the substrate, respectively, or the MBE method to form the InSb thin film 2, and then, as shown in FIG. With the thin films 2 facing each other,
The resin layer 10 is bonded as an adhesive layer, and then the mica substrate 1 is mechanically or chemically peeled off as shown in FIG.
An Sb thin film 2 is formed. Thereafter, the InSb thin film 2 is formed into a predetermined pattern to be used as a Hall element or a magnetoresistive element by photolithography. Further, if necessary, a protective film is formed on the surface, and the substrate is finally divided and used as individual elements. However, in such a conventional method of manufacturing an InSb thin film, when the mica substrate is peeled, the InSb thin film may be damaged, and as a result, the expected characteristics are reduced. In some cases, it was not possible to obtain it, which was one of the causes of the decrease in yield. Also, the InSb thin film 2
Is supported only by the resin layer 10 with respect to the substrate 9, the strength of the InSb thin film 2 is low and its reliability is not necessarily high. Even when a protective film is formed, the adhesion between the protective film and the InSb thin film is originally low, and the stress during the formation of the protective film affects the InSb thin film.
In the worst case, there is a possibility that the InSb thin film is peeled off from the adhesive resin layer. An object of the present invention is to provide a method of manufacturing an InSb thin-film element capable of solving such a conventional problem and easily obtaining a highly reliable InSb thin-film element. According to a method of manufacturing an InSb thin film element of the present invention, a step of forming an InSb thin film on one surface of a mica substrate, Adhering to the supporting substrate, and the InS
b) forming a thin film into a fixed pattern by photolithography, forming an electrode on the mica substrate, forming a protective film on the mica substrate, and forming a surface on which the protective film is formed peeling and adhering to face the supporting substrate, a first supporting substrate to the middle layer of the mica substrate as the release surface with a portion of the mica board
Thereby, one of the mica substrates is formed on the InSb thin film.
And the step of leaving a part layer is performed in order. According to the method of manufacturing an InSb thin film element of the present invention,
First, an InSb thin film is formed on one surface of a mica substrate,
The surface of the mica substrate on which the InSb thin film is formed, on which the InSb thin film is formed, is bonded to the first support substrate. The first support substrate facilitates the handling thereof when patterning the InSb thin film thereafter and bonding it to the second support substrate, and prevents unnecessary stress from being applied to the mica substrate and the InSb thin film. . In the next step, InS
The thin film b is formed in a predetermined pattern by photolithography, an electrode is formed, and a protective film is formed. Subsequently, the surface on which the protective film is formed is adhered to the second support substrate. Thereafter, the first support substrate is peeled off with the middle of the layer of the mica substrate as a peeling surface . At this time, a part of the mica substrate is left on the InSb thin film as a protective film. According to the above-described manufacturing method, a part of the mica substrate remains on the second support substrate side, which functions as a protective film. Therefore, when the mica substrate is completely peeled, In
The problem of damage to the Sb thin film and the problem of adhesion between the InSb thin film and the supporting substrate are solved, and a highly reliable InSb thin film element can be easily manufactured. A method of manufacturing an InSb thin film element according to an embodiment of the present invention will be described with reference to FIGS. <First Step> First, as shown in FIG. 1, an InSb thin film 2 is formed on a mica substrate 1 by a three-temperature method. << Second Step >> As shown in FIG. 2, the InSb thin film of the mica substrate 1 is not formed on the first support substrate 3 made of an inorganic material such as glass or a metal plate such as stainless steel. The surfaces are bonded via a resin layer 4 of an epoxy, phenol or acrylate resin. << Third Step >> As shown in FIG. 3, the InSb thin film 2 is patterned into a fixed pattern by photolithography, and further, an electrode 5 having a fixed pattern is formed. << Fourth Step >> As shown in FIG. 4, a coating solution comprising a Si compound, an additive and an organic solvent is applied to the surface thereof and sintered to form a SiO 2 film (SOG film).
6 is formed. In addition, a sputtering method or a CVD method can be used as a method for forming the protective film 6, regardless of an inorganic film or an organic film, as long as the content of impurities is low and the moisture-proof effect is high. << Fifth Step >> Thereafter, as shown in FIG.
Second made of ferrite, glass, Si, GaAs, etc.
The surface on which the protective film 6 is formed is bonded to the supporting substrate 7 via the resin layer 8 in the same manner as in the second step. << Sixth Step >> As shown in FIG. 6, the first support substrate 3 is peeled together with the mica substrate 1 from the layer of the mica substrate 1. At that time, a part of the mica substrate remains as a mica layer 1 'of several to several tens of μm. Thereafter, a single element is cut out with a dicing saw, and the lead frame bonding portion is etched by RIE or ion beam method using metal masking, and the element is mounted on the lead frame. In addition, an extraction electrode is formed at the end of the element by a sputtering method,
A surface-mounted element may be formed. According to the embodiment of the present invention, an InSb thin film element was prepared. The magnetoresistance ratio at a magnetic flux density of 3 kG was 3.4, and the temperature coefficient of input resistance at 20 to 60 ° C. was -1.2% / ° C. Obtained. According to the present invention, since a part of the mica substrate on which the InSb thin film is formed can be used as a protective film as it is, a step of forming a new protective film on the element surface becomes unnecessary. At the same time, the reliability of the InSb thin film can be improved. Further, when the mica substrate is peeled, a part of the mica substrate remains, so that damage of the InSb thin film can be prevented, and an InSb thin film element having desired characteristics can be manufactured at a high yield.
【図面の簡単な説明】
【図１】この発明の実施例であるＩｎＳｂ薄膜素子の製
造方法における第１工程の状態を示す図である。
【図２】この発明の実施例であるＩｎＳｂ薄膜素子の製
造方法における第２工程の状態を示す図である。
【図３】この発明の実施例であるＩｎＳｂ薄膜素子の製
造方法における第３工程の状態を示す図である。
【図４】この発明の実施例であるＩｎＳｂ薄膜素子の製
造方法における第４工程の状態を示す図である。
【図５】この発明の実施例であるＩｎＳｂ薄膜素子の製
造方法における第５工程の状態を示す図である。
【図６】この発明の実施例であるＩｎＳｂ薄膜素子の製
造方法における第６工程の状態を示す図である。
【図７】従来のＩｎＳｂ薄膜素子の製造方法の手順を示
す図である。
【図８】従来のＩｎＳｂ薄膜素子の製造方法の手順を示
す図である。
【図９】従来のＩｎＳｂ薄膜素子の製造方法の手順を示
す図である。
【符号の説明】
１−マイカ基板
１´−マイカ層
２−ＩｎＳｂ薄膜
３−第１の支持基板
４−樹脂層
５−電極
６−保護膜
７−第２の支持基板
８−樹脂層BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing a state of a first step in a method of manufacturing an InSb thin film element according to an embodiment of the present invention. FIG. 2 is a view showing a state of a second step in the method of manufacturing the InSb thin film element according to the embodiment of the present invention. FIG. 3 is a view showing a state of a third step in the method of manufacturing the InSb thin film element according to the embodiment of the present invention. FIG. 4 is a view showing a state of a fourth step in the method of manufacturing the InSb thin film element according to the embodiment of the present invention. FIG. 5 is a view showing a state of a fifth step in the method of manufacturing the InSb thin film element according to the embodiment of the present invention. FIG. 6 is a view showing a state of a sixth step in the method of manufacturing the InSb thin film element according to the embodiment of the present invention. FIG. 7 is a diagram showing a procedure of a conventional method for manufacturing an InSb thin film element. FIG. 8 is a view showing a procedure of a conventional method for manufacturing an InSb thin film element. FIG. 9 is a diagram showing a procedure of a conventional method for manufacturing an InSb thin film element. DESCRIPTION OF SYMBOLS 1- Mica substrate 1'- Mica layer 2- InSb thin film 3- First support substrate 4- Resin layer 5- Electrode 6- Protective film 7- Second support substrate 8- Resin layer
フロントページの続き (56)参考文献 特開 昭61−216372（ＪＰ，Ａ) 特開 昭63−196874（ＪＰ，Ａ) 特開 昭60−257187（ＪＰ，Ａ) 特開 昭59−111321（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 43/12 H01L 43/14 H01L 43/06 H01L 43/08 G01R 33/07 G01R 33/09 H01L 27/12 ＪＩＣＳＴファイル（ＪＯＩＳ)Continuation of the front page (56) References JP-A-61-216372 (JP, A) JP-A-63-196874 (JP, A) JP-A-60-257187 (JP, A) JP-A-59-111321 (JP) , A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 43/12 H01L 43/14 H01L 43/06 H01L 43/08 G01R 33/07 G01R 33/09 H01L 27/12 JICST file ( JOIS)
Claims (1)
成膜する工程と、 前記マイカ基板のＩｎＳｂ薄膜非形成面を第１の支持基
板に接着する工程と、 前記ＩｎＳｂ薄膜をフォトリソグラフィにより一定パタ
ーンに形成する工程と、 前記マイカ基板上に電極を形成する工程と、 前記マイカ基板上に保護膜を形成する工程と、 この保護膜を形成した面を第２の支持基板に対向させて
接着する工程と、前記マイカ基板の層途中を剥離面として 第１の支持基板
を前記マイカ基板の一部とともに剥離することにより、
前記ＩｎＳｂ薄膜上に前記マイカ基板の一部の層を残す
工程、 とを順に行うＩｎＳｂ薄膜素子の製造方法。(57) Claims 1. A step of forming an InSb thin film on one surface of a mica substrate, and a step of bonding an InSb thin film non-formed surface of the mica substrate to a first support substrate. Forming the InSb thin film in a fixed pattern by photolithography; forming an electrode on the mica substrate; forming a protective film on the mica substrate; and adhering to face the second supporting substrate, by peeling the first support substrate in the middle layer of the mica substrate as the release surface with a portion of the mica board,
Leaving a part of the layer of the mica substrate on the InSb thin film .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01459393A JP3404780B2 (en) | 1993-02-01 | 1993-02-01 | Method for manufacturing InSb thin film element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01459393A JP3404780B2 (en) | 1993-02-01 | 1993-02-01 | Method for manufacturing InSb thin film element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06232479A JPH06232479A (en) | 1994-08-19 |
| JP3404780B2 true JP3404780B2 (en) | 2003-05-12 |
Family
ID=11865477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01459393A Expired - Fee Related JP3404780B2 (en) | 1993-02-01 | 1993-02-01 | Method for manufacturing InSb thin film element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3404780B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5495254B2 (en) * | 2009-07-27 | 2014-05-21 | 日置電機株式会社 | Manufacturing method of current sensor |
-
1993
- 1993-02-01 JP JP01459393A patent/JP3404780B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06232479A (en) | 1994-08-19 |
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