JP3395647B2 - Method for producing silicon steel sheet having Si concentration distribution using siliconizing method - Google Patents
Method for producing silicon steel sheet having Si concentration distribution using siliconizing methodInfo
- Publication number
- JP3395647B2 JP3395647B2 JP11435798A JP11435798A JP3395647B2 JP 3395647 B2 JP3395647 B2 JP 3395647B2 JP 11435798 A JP11435798 A JP 11435798A JP 11435798 A JP11435798 A JP 11435798A JP 3395647 B2 JP3395647 B2 JP 3395647B2
- Authority
- JP
- Japan
- Prior art keywords
- siliconizing
- steel sheet
- treatment
- furnace
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Manufacturing Of Steel Electrode Plates (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、浸珪法を用いたＳ
ｉ濃度分布を有する珪素鋼板の製造方法に関する。TECHNICAL FIELD The present invention relates to S using a siliconizing method.
The present invention relates to a method for manufacturing a silicon steel sheet having an i concentration distribution.
【０００２】[0002]
【従来の技術】高珪素鋼板は、トランスやモーターの鉄
心材料に使用され、Ｓｉの含有量が増すほど鉄損が低減
し、Ｓｉ：６．５ｗｔ．％では磁歪が０となり、最大透
磁率のピークとなる等、優れた磁気特性を示すことが知
られている。2. Description of the Related Art High silicon steel sheets are used as iron core materials for transformers and motors, the iron loss decreases as the Si content increases, and Si: 6.5 wt. It is known that when%, the magnetostriction becomes 0, and the maximum magnetic permeability peaks, and thus excellent magnetic properties are exhibited.
【０００３】従来、高珪素鋼板の製造方法として、低珪
素鋼を圧延により薄板とした後、鋼板表面からＳｉを浸
透拡散させる、いわゆる浸珪法が知られている。しか
し、拡散により均一Ｓｉ濃度の高珪素鋼板を製造しよう
とすると極めて時間がかかる。そこで、特開昭６２−２
２７０３３号ないし特開昭６２−２２７０３６号公報、
特公平５−４９７４４号公報には、表層のＳｉ濃度が
６．５ｗｔ．％となって、板厚方向にＳｉの濃度分布が
存在する時点で拡散処理を打ち切り、全体の処理時間を
短くすることが提案されている。また、このようにして
Ｓｉ分布を形成した珪素鋼板は鉄損が低いことが示され
ている。As a method of manufacturing a high-silicon steel sheet, a so-called siliconizing method has been conventionally known, in which low-silicon steel is rolled into a thin plate and then Si is permeated and diffused from the surface of the steel plate. However, it takes a very long time to manufacture a high silicon steel sheet having a uniform Si concentration by diffusion. Then, JP-A-62-2
27033 to JP-A-62-227036,
Japanese Patent Publication No. 5-49744 discloses that the Si concentration of the surface layer is 6.5 wt. %, The diffusion process is terminated at the time when the Si concentration distribution exists in the plate thickness direction, and it is proposed to shorten the entire processing time. Further, it is shown that the silicon steel sheet having the Si distribution thus formed has a low iron loss.
【０００４】一方、特開平９−１８４０５１号公報に
は、偏磁の原因である残留磁束密度を低下させるには板
厚方向にＳｉの濃度勾配を形成することが有効なことが
開示されている。On the other hand, Japanese Unexamined Patent Publication No. 9-184051 discloses that it is effective to form a Si concentration gradient in the plate thickness direction in order to reduce the residual magnetic flux density which is the cause of the demagnetization. .
【０００５】ところで、上記公報に開示されている従来
の浸珪法は、加熱−浸珪処理−拡散処理−冷却の４つの
工程よりなり、浸珪処理および拡散処理は、浸珪量と拡
散状態の制御を容易にするために完全に隔離・区別して
いた。すなわち、まず加熱炉で加熱した後、ＳｉＣｌ4
を含む無酸化性ガス雰囲気の浸珪炉にて浸珪処理を行
い、次にＳｉＣｌ4を含まない無酸化性ガス雰囲気の拡
散炉にて拡散処理を行っていた。By the way, the conventional siliconizing method disclosed in the above publication comprises four steps of heating-siliconizing processing-diffusion processing-cooling. It was completely isolated / distinguished to facilitate control of the. That is, first, after heating in a heating furnace, SiCl 4
Silicidation treatment was performed in a non-oxidizing gas atmosphere containing silicon, and then diffusion treatment was performed in a non-oxidizing gas atmosphere diffusion furnace containing no SiCl 4 .
【０００６】しかし、この場合には、炉構造が複雑にな
ることや拡散処理中の非酸化雰囲気の制御次第では鋼板
の酸化による品質の劣化が発生し、問題とされてきた。However, in this case, there has been a problem that the furnace structure becomes complicated and the quality of the steel sheet deteriorates due to oxidation depending on the control of the non-oxidizing atmosphere during the diffusion treatment.
【０００７】また、板厚中心部の珪素濃度は磁気特性へ
の影響が強く、板厚中央部分の珪素濃度調整は、Ｓｉ濃
度分布を有する珪素鋼板の製造において、重要な条件の
一つであるが、従来の浸珪処理と拡散処理を個別的に行
う製造方法は、拡散処理だけで板厚方向の珪素濃度分布
を調整する必要があるため、板厚方向での中心珪素濃度
の調整が困難であり、事実上、母材珪素濃度によっての
調整となることから、自由度の低い製造方法となってい
た。Further, the silicon concentration in the central portion of the plate thickness has a strong influence on the magnetic characteristics, and the adjustment of the silicon concentration in the central portion of the plate thickness is one of the important conditions in the production of a silicon steel sheet having a Si concentration distribution. However, in the conventional manufacturing method in which the siliconizing treatment and the diffusion treatment are separately performed, it is difficult to adjust the central silicon concentration in the thickness direction because it is necessary to adjust the silicon concentration distribution in the thickness direction only by the diffusion treatment. In fact, since the adjustment is based on the concentration of the base material silicon, the manufacturing method has a low degree of freedom.
【０００８】また、母材珪素濃度が３．５ｗｔ．％以上
となると冷間圧延が困難となるため、母材中心珪素濃度
を３．５ｗｔ．％以上とする場合には冷間圧延を必要と
する薄板の製造が事実上不可能となっていた。Further, the base material silicon concentration is 3.5 wt. %, The cold rolling becomes difficult, so that the base material center silicon concentration is 3.5 wt. If it is more than 0.1%, it is practically impossible to manufacture a thin plate that requires cold rolling.
【０００９】[0009]
【発明が解決しようとする課題】本発明はかかる事情に
鑑みてなされたものであって、炉構造を複雑にせず、か
つ品質の劣化もなく、自由度の高い処理により所望の磁
気特性を得ることができる浸珪法を用いたＳｉ濃度分布
を有する珪素鋼板の製造方法を提供することを目的とす
る。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and the desired magnetic characteristics can be obtained by a highly flexible process without complicating the furnace structure and without quality deterioration. It is an object of the present invention to provide a method for producing a silicon steel sheet having a Si concentration distribution by using a siliconizing method that can be performed.
【００１０】[0010]
【課題を解決するための手段】上記課題を解決するため
に、本発明は、鋼板表面からＳｉを浸透させる浸珪処理
および浸透させたＳｉを鋼板内に拡散させる拡散処理を
同一炉内で同一ガス雰囲気で行い、前記炉内を複数のゾ
ーンに分割し、各ゾーンの原料ガスの供給量を調節する
ことにより、浸珪および拡散速度を制御し、鋼板の板厚
方向のＳｉ濃度分布を制御することを特徴とする、浸珪
法を用いたＳｉ濃度分布を有する珪素鋼板の製造方法を
提供する。In order to solve the above-mentioned problems, according to the present invention, the siliconizing treatment for infiltrating Si from the steel sheet surface and the diffusion treatment for diffusing the infiltrated Si into the steel sheet are performed in the same furnace. performed in a gas atmosphere, a plurality of zone of the furnace
The siliconizing method is characterized by controlling the siliconizing and diffusion rates by controlling the feed rate of the raw material gas in each zone, and controlling the Si concentration distribution in the plate thickness direction of the steel sheet. Provided is a method for manufacturing a silicon steel sheet having a Si concentration distribution using.
【００１１】この場合に、前記浸珪処理および拡散処理
は、化学気相蒸着（以下、ＣＶＤと記す）法を用いて行
うことができる。また、ＣＶＤ法による浸珪処理および
拡散処理はＳｉＣｌ４を用いて行うことができる。In this case, the siliconizing treatment and the diffusion treatment can be performed by using a chemical vapor deposition (hereinafter referred to as CVD) method. Further , the siliconizing treatment and the diffusion treatment by the CVD method can be performed by using SiCl 4 .
【００１２】本発明によれば、浸珪処理と拡散処理とを
同一炉内で同一ガス雰囲気で行うので、仕切等の炉構造
物を排除することができ、炉構造を簡素化することがで
きる。また、このように拡散処理を浸珪処理と同一ガス
雰囲気で行うことにより、拡散処理雰囲気の水、酸素濃
度を低減することができ、均熱拡散処理段階での鋼板酸
化を抑制することができ、製品の品質劣化を防止するこ
とができる。さらに、前記炉内を複数のゾーンに分割
し、各ゾーンの原料ガスの供給量を調節するので、例え
ば、板厚方向での中心珪素濃度の調整を初期浸珪にて行
い、十分な拡散が付与された後、濃度傾斜付与を目的と
した浸珪を行う処理が可能となり、自由度の高い処理に
より所望の磁気特性を得ることができる。According to the present invention, since the siliconizing treatment and the diffusion treatment are performed in the same furnace in the same gas atmosphere, furnace structures such as partitions can be eliminated and the furnace structure can be simplified. . Further, by performing the diffusion treatment in the same gas atmosphere as the siliconizing treatment in this way, it is possible to reduce the water and oxygen concentrations in the diffusion treatment atmosphere, and it is possible to suppress the steel sheet oxidation in the soaking diffusion treatment stage. , It is possible to prevent product quality deterioration. Furthermore, the furnace is divided into multiple zones
Then, since the supply amount of the raw material gas in each zone is adjusted , for example, adjustment of the central silicon concentration in the plate thickness direction is performed by initial siliconization, and after sufficient diffusion is imparted, the purpose is to impart a concentration gradient. It becomes possible to perform the above-mentioned siliconizing, and the desired magnetic characteristics can be obtained by the treatment with a high degree of freedom.
【００１３】[0013]
【発明の実施の形態】以下本発明について具体的に説明
する。本発明においては、浸珪法を用いてＳｉ濃度分布
を有する珪素鋼板鋼板を製造するにあたり、鋼板表面か
らＳｉを浸透させる浸珪処理および浸透させたＳｉを鋼
板内に拡散させる拡散処理を同一炉内で同一ガス雰囲気
で行い、炉内を複数のゾーンに分割し、各ゾーンの原料
ガスの供給量を調節することにより、浸珪および拡散速
度を制御し、鋼板の板厚方向のＳｉ濃度分布を制御す
る。このようなＳｉ濃度の分布の制御は炉内において原
料の供給を部分的に調節することにより行うことができ
る。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be specifically described below. In the present invention, when a silicon steel sheet having a Si concentration distribution is manufactured using the siliconizing method, the siliconizing treatment for infiltrating Si from the steel sheet surface and the diffusion treatment for diffusing the infiltrated Si into the steel sheet are performed in the same furnace. In the same gas atmosphere inside, dividing the furnace into multiple zones,
By controlling the gas supply amount , the siliconization and diffusion rate are controlled, and the Si concentration distribution in the plate thickness direction of the steel plate is controlled. Such control of the Si concentration distribution can be performed by partially adjusting the supply of the raw material in the furnace.
【００１４】ここで、浸珪処理および拡散処理は、典型
的にはＳｉ含有ガスによるＣＶＤ処理により行う。そし
て、従来の浸珪処理および拡散処理を、同一の炉でＳｉ
含有ガスを含む同一雰囲気で行う。Here, the siliconizing treatment and the diffusion treatment are typically performed by a CVD treatment using a Si-containing gas. Then, the conventional siliconizing treatment and diffusion treatment are performed in the same furnace with Si.
Perform in the same atmosphere containing the contained gas.
【００１５】処理に用いるＳｉ含有ガスは、特に限定さ
れるものではなく、ＳｉＨ4、Ｓｉ2Ｈ5、ＳｉＣｌ4等を
用いることができるが、中でもＳｉＣｌ4が好ましい。
処理ガスとしてＳｉＣｌ4を用いる場合には、処理温度
を１０２３〜１２５０℃の範囲にすることが好ましい。
また、浸珪処理および拡散処理の際のＳｉＣｌ4の濃度
は ０．０２〜３５ｍｏｌ％とすることが好ましい。The Si-containing gas used for the treatment is not particularly limited, and SiH 4 , Si 2 H 5 , SiCl 4 and the like can be used, and among them, SiCl 4 is preferable.
When SiCl 4 is used as the processing gas, the processing temperature is preferably in the range of 1023 to 1250 ° C.
The concentration of SiCl 4 during the siliconizing treatment and the diffusion treatment is preferably 0.02 to 35 mol%.
【００１６】このような処理は、例えば、図１に示す装
置で行うことができる。この装置は、加熱炉１と、浸珪
・拡散処理炉２と、冷却炉３とが順に配置され、鋼板Ｓ
が連続的に処理される。加熱炉１において例えば１２０
０℃まで加熱し、浸珪・拡散処理炉２においてＳｉＣｌ
4ガスを導入する。Such processing can be performed, for example, by the device shown in FIG. In this apparatus, a heating furnace 1, a siliconizing / diffusion treatment furnace 2, and a cooling furnace 3 are arranged in this order, and a steel plate S
Are processed continuously. In the heating furnace 1, for example, 120
Heat to 0 ° C and turn into SiCl in the siliconization / diffusion treatment furnace 2.
4 Gas is introduced.
【００１７】浸珪・拡散処理炉２は加熱炉側から第１ゾ
ーン１１、第２ゾーン１２、第３ゾーン１３、第４ゾー
ン１４、第５ゾーン１５を有しており、各ゾーンにＳｉ
Ｃｌ4ガス導入ノズルが設けられている。したがって、
各ゾーン毎のＳｉＣｌ4ガス流量を制御することによ
り、浸珪処理および拡散処理の処理時間および処理間隔
を制御することができる。例えば、数回の珪素添加（浸
珪）および拡散を連続的に実施することができる。この
ように各ゾーンのＳｉＣｌ4ガス流量を制御し、さらに
必要に応じて鋼板Ｓの移動速度を調整することにより、
鋼板Ｓに対する浸珪および拡散速度を制御することがで
き、鋼板の板厚方向のＳｉ濃度分布を任意に制御するこ
とができる。その後、このようにＳｉ濃度分布が制御さ
れた鋼板Ｓを冷却炉３で冷却し、巻き取る。The siliconizing / diffusion treatment furnace 2 has a first zone 11, a second zone 12, a third zone 13, a fourth zone 14 and a fifth zone 15 from the heating furnace side, and Si is provided in each zone.
A Cl 4 gas introduction nozzle is provided. Therefore,
By controlling the flow rate of the SiCl 4 gas in each zone, it is possible to control the treatment time and the treatment interval of the siliconizing treatment and the diffusion treatment. For example, several times of silicon addition (siliconization) and diffusion can be continuously performed. By controlling the SiCl 4 gas flow rate in each zone in this manner and further adjusting the moving speed of the steel sheet S as necessary,
It is possible to control the siliconization and the diffusion rate with respect to the steel plate S, and it is possible to arbitrarily control the Si concentration distribution in the plate thickness direction of the steel plate. After that, the steel plate S whose Si concentration distribution is controlled in this way is cooled in the cooling furnace 3 and wound up.
【００１８】このように、浸珪・拡散処理炉２により浸
珪処理および拡散処理を同一炉で、しかも同一のＳｉＣ
ｌ4ガス雰囲気で行うことにより、炉の構造を簡略化す
ることができるとともに、従来拡散炉で問題となってい
た鋼板酸化も抑制することができる。また、浸珪・拡散
処理炉２における雰囲気調整を、各ゾーン毎にＳｉＣｌ
4ガスの流量を制御することにより部分的に行うことが
できるので、浸珪処理および拡散処理を制御しやすく、
結果としてＳｉ濃度分布の制御が容易となる。したがっ
て、極めて自由度の高い処理を行うことができる。As described above, the siliconizing / diffusion processing furnace 2 performs the siliconizing / diffusion processing in the same furnace and the same SiC.
By carrying out in an l 4 gas atmosphere, the structure of the furnace can be simplified and the steel plate oxidation which has been a problem in the conventional diffusion furnace can be suppressed. In addition, the atmosphere in the siliconizing / diffusion treatment furnace 2 is adjusted to SiCl in each zone.
Can be performed in part by 4 to control the flow rate of the gas, easy to control the siliconizing treatment and diffusion process,
As a result, it becomes easy to control the Si concentration distribution. Therefore, it is possible to perform processing with a high degree of freedom.
【００１９】[0019]
【実施例】以下、本発明の実施例について説明する。上
記図１に示すような装置により、ＣＶＤ法を使用した連
続浸珪処理プロセスにより、２．５ｗｔ．％Ｓｉと３．
０ｗｔ．％Ｓｉの２水準で板厚０．２ｍｍの鋼板を母材
とし、ＳｉＣｌ4を原料ガスに用いて、板厚方向にＳｉ
濃度勾配を有する材料を製造した。EXAMPLES Examples of the present invention will be described below. With the apparatus as shown in FIG. 1 above, 2.5 wt. % Si and 3.
0 wt. % Steel with a level of 0.2 mm and a thickness of 0.2 mm as the base material, using SiCl 4 as a raw material gas, and
A material with a concentration gradient was produced.
【００２０】浸珪・拡散処理炉２内を上述したように５
つのゾーンに分け、各ゾーンにそれぞれガス供給ノズル
を配した。そして、各ゾーン毎のＳｉＣｌ4ガス流量を
コントロールすることにより、数回の珪素添加・拡散を
連続的に実施した。炉内温度は図２に示す炉温パターン
にて行った。なお、比較のため、浸珪処理と拡散処理を
個別に実施する従来法でも製造した。As described above, the inside of the siliconization / diffusion treatment furnace 5
It was divided into two zones, and each zone was provided with a gas supply nozzle. Then, by controlling the flow rate of SiCl 4 gas in each zone, silicon addition / diffusion was continuously performed several times. The temperature inside the furnace was determined according to the furnace temperature pattern shown in FIG. For comparison, the conventional method in which the siliconizing treatment and the diffusion treatment are separately carried out was also manufactured.
【００２１】表１に、これらの製造条件と、電子線プロ
ーブマイクロアナライザー（ＥＰＭＡ）によって鋼板の
板厚方向の珪素濃度分布を分析した結果に基づく表層珪
素濃度および中心珪素濃度の値、磁気特性、加工性を示
す。Table 1 shows the manufacturing conditions, the values of the surface silicon concentration and the central silicon concentration based on the analysis results of the silicon concentration distribution in the plate thickness direction of the steel sheet by the electron probe microanalyzer (EPMA), the magnetic characteristics, Shows workability.
【００２２】[0022]
【表１】 [Table 1]
【００２３】表１に示すように、本発明に従って処理を
行った条件１〜４では、Ｓｉの濃度勾配を細かく制御す
ることができ、鉄損を許容値に維持しつつ、残留磁束密
度が低く、かつ加工性の良好な珪素鋼板を得ることがで
きた。これに対して、比較例では処理の自由度が低く、
Ｓｉ濃度が６．５ｗｔ．％で均一なものか、または表面
が６．５ｗｔ．％Ｓｉで中心のＳｉ濃度が母材濃度であ
るものが得られたが、満足する特性が得難いことが確認
された。As shown in Table 1, under the conditions 1 to 4 in which the treatment is performed according to the present invention, the concentration gradient of Si can be finely controlled, the iron loss is maintained at an allowable value, and the residual magnetic flux density is low. It was possible to obtain a silicon steel sheet having good workability. On the other hand, in the comparative example, the degree of freedom in processing is low,
Si concentration is 6.5 wt. %, Or the surface is 6.5 wt. It was confirmed that although the center Si concentration was the base material concentration in% Si, it was difficult to obtain satisfactory characteristics.
【００２４】[0024]
【発明の効果】以上説明したように、本発明によれば、
浸珪処理と拡散処理とを同一炉で同一ガス雰囲気で行う
ので、炉構造を簡素化することができ、また、拡散処理
雰囲気の水、酸素濃度を低減することができるので、均
熱拡散処理段階での鋼板酸化を抑制することができ、製
品の品質劣化を防止することができる。さらに、炉内を
複数のゾーンに分割し、各ゾーンの原料ガスの供給量を
調節するので、自由度の高い処理により所望の磁気特性
を得ることができる。As described above, according to the present invention,
Since the siliconizing treatment and the diffusion treatment are performed in the same furnace in the same gas atmosphere, the furnace structure can be simplified, and the water and oxygen concentrations in the diffusion treatment atmosphere can be reduced. It is possible to suppress the oxidation of the steel sheet at the stage and prevent the quality deterioration of the product. Furthermore, in the furnace
Divide into multiple zones and adjust the amount of raw material gas supplied to each zone.
Since it is adjusted , desired magnetic characteristics can be obtained by a highly flexible process.
【図１】本発明の方法を実施するための装置の一例を示
す概略構成図。FIG. 1 is a schematic configuration diagram showing an example of an apparatus for carrying out the method of the present invention.
【図２】実施例における炉の温度分布を示す図。FIG. 2 is a diagram showing a temperature distribution of a furnace in an example.
１； 加熱炉 ２； 浸珪・拡散処理炉 ３； 冷却炉 １１〜１５； ゾーン Ｓ； 鋼板 1; heating furnace 2; Siliconization / diffusion treatment furnace 3; Cooling furnace 11-15; Zone S; Steel plate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 二宮 弘憲 東京都千代田区丸の内一丁目１番２号 日本鋼管株式会社内 (72)発明者 平谷 多津彦 東京都千代田区丸の内一丁目１番２号 日本鋼管株式会社内 (56)参考文献 特開 平７−90544（ＪＰ，Ａ) 特開 平７−90545（ＪＰ，Ａ) 特開 平９−184051（ＪＰ，Ａ) 特開 平４−246157（ＪＰ，Ａ) 特開 昭62−227078（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 10/08 C23C 16/24,16/52 C23C 38/02 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hironori Ninomiya 1-2-2 Marunouchi, Chiyoda-ku, Tokyo Inside Nippon Kokan Co., Ltd. (72) 1-2-1 Marunouchi, Chiyoda-ku, Tokyo Tatsuhiko Hiratani (56) References JP-A-7-90544 (JP, A) JP-A-7-90545 (JP, A) JP-A-9-184051 (JP, A) JP-A-4-246157 ( JP, A) JP 62-227078 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) C23C 10/08 C23C 16 / 24,16 / 52 C23C 38/02
Claims (3)
および浸透させたＳｉを鋼板内に拡散させる拡散処理を
同一炉内で同一ガス雰囲気で行い、前記炉内を複数のゾ
ーンに分割し、各ゾーンの原料ガスの供給量を調節する
ことにより、浸珪および拡散速度を制御し、鋼板の板厚
方向のＳｉ濃度分布を制御することを特徴とする、浸珪
法を用いたＳｉ濃度分布を有する珪素鋼板の製造方法。1. A siliconizing treatment for infiltrating Si from the surface of a steel sheet and a diffusion treatment for diffusing the infiltrated Si into the steel sheet are performed in the same furnace in the same gas atmosphere, and a plurality of zirconiums are formed in the furnace.
The siliconizing method is characterized by controlling the siliconizing and diffusion rates by controlling the feed rate of the raw material gas in each zone, and controlling the Si concentration distribution in the plate thickness direction of the steel sheet. A method for manufacturing a silicon steel sheet having a Si concentration distribution using.
相蒸着法を用いて行うことを特徴とする、請求項１に記
載の浸珪法を用いたＳｉ濃度分布を有する珪素鋼板の製
造方法。2. The production of a silicon steel sheet having a Si concentration distribution using the siliconizing method according to claim 1, wherein the siliconizing treatment and the diffusion processing are performed by using a chemical vapor deposition method. Method.
ｌ４を用いた化学気相蒸着法にて行うことを特徴とす
る、請求項２に記載の浸珪処理を浸珪法を用いたＳｉ濃
度分布を有する珪素鋼板の製造方法。3. The siliconizing treatment and the diffusion treatment are made of SiC.
The method for producing a silicon steel sheet having a Si concentration distribution using the siliconizing method according to claim 2, wherein the siliconizing treatment is performed by a chemical vapor deposition method using l 4 .
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11435798A JP3395647B2 (en) | 1998-04-10 | 1998-04-10 | Method for producing silicon steel sheet having Si concentration distribution using siliconizing method |
| EP99939203A EP0987341A4 (en) | 1998-03-12 | 1999-03-05 | Silicon steel sheet and method for producing the same |
| KR1019997009343A KR100334860B1 (en) | 1998-03-12 | 1999-03-05 | Silicon steel sheet and method for producing the same |
| US09/423,509 US6527876B2 (en) | 1998-03-12 | 1999-03-05 | Silicon steel sheet and method for producing the same |
| PCT/JP1999/001063 WO1999046417A1 (en) | 1998-03-12 | 1999-03-05 | Silicon steel sheet and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11435798A JP3395647B2 (en) | 1998-04-10 | 1998-04-10 | Method for producing silicon steel sheet having Si concentration distribution using siliconizing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11293449A JPH11293449A (en) | 1999-10-26 |
| JP3395647B2 true JP3395647B2 (en) | 2003-04-14 |
Family
ID=14635712
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|---|---|---|---|
| JP11435798A Expired - Fee Related JP3395647B2 (en) | 1998-03-12 | 1998-04-10 | Method for producing silicon steel sheet having Si concentration distribution using siliconizing method |
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| Country | Link |
|---|---|
| JP (1) | JP3395647B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102162104B (en) * | 2010-10-29 | 2013-08-14 | 东北大学 | Method for preparing high silicon steel thin plate |
| JP5974671B2 (en) | 2011-11-09 | 2016-08-23 | Ｊｆｅスチール株式会社 | Ultra-thin electrical steel sheet |
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1998
- 1998-04-10 JP JP11435798A patent/JP3395647B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JPH11293449A (en) | 1999-10-26 |
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