JP3381617B2 - Switching power supply controlling semiconductor device and switching power supply having the same - Google Patents
Switching power supply controlling semiconductor device and switching power supply having the sameInfo
- Publication number
- JP3381617B2 JP3381617B2 JP09129598A JP9129598A JP3381617B2 JP 3381617 B2 JP3381617 B2 JP 3381617B2 JP 09129598 A JP09129598 A JP 09129598A JP 9129598 A JP9129598 A JP 9129598A JP 3381617 B2 JP3381617 B2 JP 3381617B2
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- switching power
- terminal
- switching
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、５００Ｖ以上の
高耐圧スイッチング素子とそれを駆動するための制御用
ＩＣとを同一の半導体チップに集積したスイッチング電
源制御用半導体装置およびそれを備えたスイッチング電
源に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a switching power supply control semiconductor device in which a high breakdown voltage switching element of 500 V or more and a control IC for driving the same are integrated on the same semiconductor chip, and a switching power supply including the same.
Regarding the source .
【０００２】[0002]
【従来の技術】図３は従来のスイッチング電源の要部回
路図である。ＡＣ１００Ｖ〜２４０Ｖの電源３１にヒュ
ーズ３２を介して整流器３３を接続し、整流器３３の出
力を電源コンデンサ３４に接続し、その電源コンデンサ
３４は出力が２巻線のトランス３５の１次巻線３６の一
端およびスイッチング電源制御用半導体装置６０の始動
電力入力端子１４と接続し、他端はスイッチング電源制
御用半導体装置６０を構成する高耐圧スイッチング・ト
ランジスタであるＭＯＳＦＥＴ２のドレイン端子１３と
接続する。またトランス３５の１つづつある２次巻線の
うち一方の２次巻線３７ａはダイオード３８を介して出
力コンデンサ３９と接続し、出力コンデンサ３９は出力
端子５０と接続する。２次巻線３７ｂはダイオード４１
を介して平滑コンデンサ４２に接続し、この平滑コンデ
ンサ４２はスイッチング電源制御用半導体装置６０のＶ
CC端子１６と接続する。スイッチング電源制御用半導体
装置６０は高耐圧スイッチング・トランジスタとして使
用されるＭＯＳＦＥＴ２と、始動電力供給素子と使用さ
れるＪＦＥＴ５と、電源回路部２１および制御回路部２
２で構成し、これらを同一半導体チップ上に集積する
か、同一モジュールに組み込んでいる。ＪＦＥＴ５のソ
ースＳを電源回路部２１に接続し、電源回路部２１は制
御回路部２２へ電力を供給する。制御回路部２２をＭＯ
ＳＦＥＴ２のゲートＧに接続して、ＭＯＳＦＥＴのスイ
ッチングを制御するまた前記のドレイン端子１３はつぎ
に説明する図４のＭＯＳＦＥＴ２のドレインパッド３と
接続し、始動電力入力端子１４はＪＦＥＴ５のドレイン
パッド４と接続し、ＶCC端子１６は制御用ＩＣ７のＶCC
パッド８ａを介して電源回路部２１と接続する。2. Description of the Related Art FIG. 3 is a circuit diagram of a main part of a conventional switching power supply. A rectifier 33 is connected to a power supply 31 of AC 100 V to 240 V via a fuse 32, and an output of the rectifier 33 is connected to a power supply capacitor 34. The power supply capacitor 34 outputs a primary winding 36 of a transformer 35 having two windings. One end and the starting power input terminal 14 of the switching power supply controlling semiconductor device 60 are connected, and the other end is connected to the drain terminal 13 of the MOSFET 2 which is a high breakdown voltage switching transistor forming the switching power supply controlling semiconductor device 60. Further, one of the secondary windings 37 a of the transformer 35 is connected to the output capacitor 39 via the diode 38, and the output capacitor 39 is connected to the output terminal 50. The secondary winding 37b is a diode 41
Is connected to the smoothing capacitor 42 through the V capacitor of the switching power supply controlling semiconductor device 60.
Connect with CC terminal 16. The semiconductor device 60 for controlling the switching power supply includes a MOSFET 2 used as a high breakdown voltage switching transistor, a JFET 5 used as a starting power supply element, a power supply circuit section 21 and a control circuit section 2.
2, and these are integrated on the same semiconductor chip or incorporated in the same module. The source S of the JFET 5 is connected to the power supply circuit section 21, and the power supply circuit section 21 supplies power to the control circuit section 22. The control circuit unit 22 is
The drain terminal 13 is connected to the gate G of the SFET 2 to control the switching of the MOSFET. Further, the drain terminal 13 is connected to the drain pad 3 of the MOSFET 2 of FIG. 4 described below, and the starting power input terminal 14 is connected to the drain pad 4 of the JFET 5. Then, the VCC terminal 16 is the VCC of the control IC 7
The power supply circuit section 21 is connected via the pad 8a.
【０００３】従来、前記のスイッチング電源制御用半導
体装置６０は、ＪＦＥＴ５と、電源回路部２１と制御回
路部２２で構成される制御用ＩＣ７と、この制御用ＩＣ
７で制御されるＭＯＳＦＥＴ２とはそれぞれ個別に外部
接続されていたが、近年、高耐圧ＩＣ技術の進歩によ
り、このＪＦＥＴ５と制御用ＩＣ７およびＭＯＳＦＥＴ
２を同一の半導体チップ１に集積して、部品点数の削
減、電源システムの簡素化が図られるようになった。Conventionally, the switching power supply control semiconductor device 60 has a JFET 5, a control IC 7 including a power supply circuit section 21 and a control circuit section 22, and a control IC.
The MOSFETs 2 controlled by 7 are individually externally connected, but in recent years, due to the progress of high voltage IC technology, the JFET 5, the control IC 7 and the MOSFETs have been
By integrating the two in the same semiconductor chip 1, the number of parts can be reduced and the power supply system can be simplified.
【０００４】図４は従来のスイッチング電源制御用半導
体装置の要部構成図である。リード・フレーム１２はチ
ップ搭載部１８と端子部１９で構成され、チップ搭載部
１８に、ＭＯＳＦＥＴ２とＪＦＥＴ５および制御用ＩＣ
７が形成される半導体チップ１が搭載される。また、Ｍ
ＯＳＦＥＴ２のドレインパッド３とリード・フレーム１
２のドレイン端子１３、ＪＦＥＴ５のドレインパッド６
とリード・フレーム１２の始動電力入力端子１４はそれ
ぞれボンディングワイヤ９で接続される。勿論、制御用
ＩＣ７のＶCCパッド８ａやＭＯＳＦＥＴ２のソースパッ
ド４などもリード・フレームのＶCC端子１６やソース端
子１５とそれぞれボンディングワイヤで接続される。FIG. 4 is a block diagram of a main part of a conventional semiconductor device for controlling a switching power supply. The lead frame 12 is composed of a chip mounting portion 18 and a terminal portion 19, and the chip mounting portion 18 includes a MOSFET 2, a JFET 5 and a control IC.
The semiconductor chip 1 on which 7 is formed is mounted. Also, M
Drain pad 3 of OSFET 2 and lead frame 1
2 drain terminal 13 and JFET 5 drain pad 6
And the starting power input terminal 14 of the lead frame 12 are connected to each other by the bonding wire 9. Of course, the VCC pad 8a of the control IC 7 and the source pad 4 of the MOSFET 2 are also connected to the VCC terminal 16 and the source terminal 15 of the lead frame by bonding wires.
【０００５】尚、パッドとはボンディングワイヤ９を固
着する半導体チップ１上に形成された電極のことであ
る。また、ＭＯＳＦＥＴ２のソースパッド４や制御用Ｉ
Ｃ７の各パッド８もリード・フレーム１２の各端子１
５、１６、１７にボンディングワイヤ９で接続される。
この半導体チップ１とリード・フレーム１２とボンディ
ングワイヤ９をモールド樹脂のパッケージ１１で封止す
る。The pad is an electrode formed on the semiconductor chip 1 to which the bonding wire 9 is fixed. In addition, the source pad 4 of the MOSFET 2 and the control I
The pads 8 of C7 are also the terminals 1 of the lead frame 12.
The bonding wires 9 are connected to 5, 16, and 17.
The semiconductor chip 1, the lead frame 12 and the bonding wires 9 are sealed with a mold resin package 11.
【０００６】つぎに、このスイッチング電源の動作を図
３を用いて説明する。ＡＣ１００Ｖ〜２４０Ｖ程度の電
源３１より供給され、整流器３３で整流された電流が電
源コンデンサ３４に流れ、電源コンデンサ３４によって
平滑されてトランス３５の１次巻線３６のの一端に印加
される。１次巻線３６の他端にはスイッチング電源制御
用半導体素装置６０を構成するＭＯＳＦＥＴ２のドレイ
ン端子１３が接続されておりＭＯＳＦＥＴ２が１００ｋ
Ｈｚ程度の周波数でスイッチングすることによってトラ
ンス３５の１次巻線３６に高周波の電力が供給される。
チョッピングされた高周波電力はダイオード３８で整流
され、出力コンデンサ３９で平滑されて、出力端子５０
には直流電力が供給される。Next, the operation of this switching power supply will be described with reference to FIG. A current supplied from a power supply 31 of about 100 to 240 V AC and rectified by the rectifier 33 flows through the power supply capacitor 34, is smoothed by the power supply capacitor 34, and is applied to one end of the primary winding 36 of the transformer 35. The other end of the primary winding 36 is connected to the drain terminal 13 of the MOSFET 2 which constitutes the switching power supply controlling semiconductor device 60.
High frequency power is supplied to the primary winding 36 of the transformer 35 by switching at a frequency of about Hz.
The chopped high frequency power is rectified by the diode 38, smoothed by the output capacitor 39, and output to the output terminal 50.
DC power is supplied to.
【０００７】つぎに、スイッチング電源制御半導体装置
６０の動作について説明する。電源コンデンサ３４で平
滑された電流は、ドレイン端子１４−ＪＦＥＴ５−ＶCC
端子１６を経由して平滑コンデンサ４２へ流れ、平滑コ
ンデンサ４２をチャージし、この平滑コンデンサ４２の
電圧が上昇するとＪＦＥＴ５はオフ状態になる。この平
滑コンデンサ４２からＶCC端子１６を介して電源回路部
２１に始動電力が供給される。Next, the operation of the switching power supply control semiconductor device 60 will be described. The current smoothed by the power supply capacitor 34 is drain terminal 14-JFET5-VCC
It flows to the smoothing capacitor 42 via the terminal 16, charges the smoothing capacitor 42, and when the voltage of the smoothing capacitor 42 rises, the JFET 5 is turned off. Starting power is supplied from the smoothing capacitor 42 to the power supply circuit section 21 via the VCC terminal 16.
【０００８】制御回路部２２は、電源回路部２１に蓄え
られた始動電力を電源とし、図示しない指令手段のオン
・オフ指令に基づいてＭＯＳＦＥＴ２のスイッチングを
制御し、１００ｋＨｚ程度の周波数でスイッチング動作
することによって、トランス３５の１次巻線３６に電力
を供給する。その後はスイッチングが開始され、トラン
ス３５の２次巻線３７ａ、３７ｂに電圧が発生すると、
今度は２次巻線３７ｂに発生する電力をダイオード４１
で整流し、平滑コンデンサ４２で平滑し、ＶCC端子１６
を経て電源回路部２１へ供給する。そして、制御回路部
２２はこの電力によって動作することができるのであ
る。The control circuit section 22 uses the starting power stored in the power supply circuit section 21 as a power source, controls the switching of the MOSFET 2 based on the ON / OFF command of the command means (not shown), and operates at a frequency of about 100 kHz. As a result, power is supplied to the primary winding 36 of the transformer 35. After that, switching is started, and when voltage is generated in the secondary windings 37a and 37b of the transformer 35,
This time, the power generated in the secondary winding 37b is supplied to the diode 41.
Rectified by, smoothed by smoothing capacitor 42, VCC terminal 16
And is supplied to the power supply circuit unit 21 via. Then, the control circuit unit 22 can operate with this electric power.
【０００９】前記の動作において、高耐圧スイッチング
・トランジスタとして使用するＭＯＳＦＥＴ２の制御回
路部２２を始動するための始動電力は、電源３１を整流
し、始動電力入力端子１４からＪＦＥＴ５を介して制御
用ＩＣ７に供給されるため、このＪＦＥＴ５に印加され
る電圧は、トランスの跳ね上がり電圧が電源電圧に重畳
されてＭＯＳＦＥＴ２に印加される印加電圧よりも低
い。そのため、電源電圧をＡＣ１００〜２４０Ｖとする
と、始動電力供給素子であるＪＦＥＴ５の定格電圧は４
５０Ｖ程度、ＭＯＳＦＥＴ２の定格電圧は７００Ｖ程度
必要になる。In the above-described operation, the starting power for starting the control circuit section 22 of the MOSFET 2 used as the high breakdown voltage switching transistor is rectified by the power supply 31, and the control IC 7 is supplied from the starting power input terminal 14 via the JFET 5. Therefore, the voltage applied to the JFET 5 is lower than the applied voltage applied to the MOSFET 2 by superimposing the jump voltage of the transformer on the power supply voltage. Therefore, when the power supply voltage is 100 to 240 V AC, the rated voltage of JFET5, which is a starting power supply element, is 4
The rated voltage of the MOSFET 2 needs to be about 50V and about 700V.
【００１０】[0010]
【発明が解決しようとする課題】前記のように、ＪＦＥ
Ｔ５に接続される始動電力入力端子１４と、ＭＯＳＦＥ
Ｔ２に接続されるドレイン端子１３との間には電位差が
生じるため、ドレイン端子１３から始動電力入力端子１
４にサージ電圧が侵入することがある。また回路組立て
時などに、始動電力入力端子１４自体に、静電気が印加
されることがある。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention As mentioned above, JFE
A starting power input terminal 14 connected to T5 and a MOSFE
Since a potential difference is generated between the drain terminal 13 connected to T2, the starting power input terminal 1 from the drain terminal 13
A surge voltage may invade 4. In addition, static electricity may be applied to the starting power input terminal 14 itself when the circuit is assembled.
【００１１】一方、サージや静電気に対する耐量はデバ
イス面積の大きいＭＯＳＦＥＴ２に比べて、面積が小さ
いＪＦＥＴ５の方が小さい。そのため、始動電力供給素
子であるＪＦＥＴ５がサージ電圧や静電気の印加によっ
て破壊する場合が生じる。この発明の目的は、前記の課
題を解決して、静電気に対する耐量やサージ耐量が高い
スイッチング電源制御用半導体装置を提供することにあ
る。On the other hand, the resistance to surges and static electricity is smaller in the JFET 5 having a smaller area than in the MOSFET 2 having a large device area. Therefore, the JFET 5, which is the starting power supply element, may be destroyed by the application of surge voltage or static electricity. An object of the present invention is to solve the above problems and provide a semiconductor device for switching power supply control, which has high resistance to static electricity and surge resistance.
【００１２】[0012]
【課題を解決するための手段】前記の目的を達成するた
めに、高電位側端子がスイッチング電源のトランスの1
次巻線に直列に接続されるスイッチング素子と、前記ス
イッチング素子を制御する制御回路部と、高電位側端子
がスイッチング電源のトランスの1次巻線に直列に接続
され、前記制御回路の始動電力を導く制御素子とを同一
半導体チップに集積し、前記制御回路は、トランスの２
次巻線に電圧が発生すると、該２次巻線から電力が供給
され、該電力が供給されると前記制御素子がオフし、前
記制御素子は前記スイッチング素子以上の定格電圧を有
し、前記スイッチング素子の高電位側端子と前記制御素
子の高電位側端子とを、同一の外部導出端子に接続する
構成とする。In order to achieve the above-mentioned object, the high-potential side terminal is a transformer of a switching power supply.
A switching element connected in series to the next winding, a control circuit section for controlling the switching element , and a high potential side terminal
Connected in series to the primary winding of the transformer of the switching power supply
And a control element for guiding the starting power of the control circuit is integrated on the same semiconductor chip, and the control circuit includes a transformer
When voltage is generated in the secondary winding, power is supplied from the secondary winding.
When the power is supplied, the control element is turned off,
The control element has a rated voltage higher than that of the switching element.
And, a high-potential-side terminal of the high potential side terminal and the control device of the switching device, a configuration that connects to the same external lead-out terminal.
【００１３】また、前記制御素子は前記スイッチング素
子以上の定格電圧を有するとよい。このように、高耐圧
スイッチング・トランジスタのドレイン端子と始動電力
供給素子のドレイン端子を同一のパッケージ端子に配線
することにより、静電気に対する耐量やサージ耐量が向
上する。The control element may have a rated voltage higher than that of the switching element. Thus, by wiring the drain terminal of the high breakdown voltage switching transistor and the drain terminal of the starting power supply element to the same package terminal, the resistance to static electricity and the surge resistance are improved.
【００１４】[0014]
【発明の実施の形態】図１はこの発明の第１実施例のス
イッチング電源制御用半導体装置の要部構成図である。
リード・フレーム１２はチップ搭載部１８と端子部１９
で構成され、チップ搭載部１８に、５００Ｖ以上の横型
の高耐圧スイッチング・トランジスタであるＭＯＳＦＥ
Ｔ２と始動電力供給素子であるＪＦＥＴ５および制御用
ＩＣ７が集積されている半導体チップ１が搭載される。
また、ＭＯＳＦＥＴ２のドレインパット３とＪＦＥＴ５
のドレインパッド６とはリード・フレームのドレイン端
子１３にボンディングワイヤ９で接続される。そのた
め、ＪＦＥＴ５の耐圧はＭＯＳＦＥＴ２の耐圧と同等以
上が必要となる。また、ＭＯＳＦＥＴ２のソースパッド
４、制御用ＩＣ７のＶCCパッド８ａおよび他パッド８ｂ
もリード・フレームのソース端子１５、ＶCC端子１６お
よび他端子１７に接続される。半導体チップ１とリード
・フレーム１２およびボンディングワイヤ９をモールド
樹脂のパッケージ１１で封止する。また高耐圧スイッチ
ング・トランジスタとしてはＭＯＳＦＥＴ２の代わりに
ＩＧＢＴ（絶縁ゲート型バイポーラトランジスタ）など
使用してもよい。始動電力入力素子はＪＦＥＴ５の代わ
りにＳＩＴ（静電誘導型トランジスタ）などを使用して
もよい。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a block diagram of the essential portions of a switching power supply controlling semiconductor device according to a first embodiment of the present invention.
The lead frame 12 has a chip mounting portion 18 and a terminal portion 19.
The chip mounting portion 18 is a horizontal type high withstand voltage switching transistor of 500V or more, which is a MOSFE.
A semiconductor chip 1 in which T2, a JFET 5 as a starting power supply element, and a control IC 7 are integrated is mounted.
Also, the drain pad 3 of the MOSFET 2 and the JFET 5
The drain pad 6 is connected to the drain terminal 13 of the lead frame by a bonding wire 9. Therefore, the breakdown voltage of JFET 5 must be equal to or higher than the breakdown voltage of MOSFET 2. The source pad 4 of the MOSFET 2, the VCC pad 8a and the other pad 8b of the control IC 7 are also included.
Is also connected to the source terminal 15, Vcc terminal 16 and other terminal 17 of the lead frame. The semiconductor chip 1, the lead frame 12, and the bonding wires 9 are sealed with a package 11 made of mold resin. As the high breakdown voltage switching transistor, an IGBT (insulated gate bipolar transistor) or the like may be used instead of the MOSFET 2. As the starting power input element, SIT (static induction transistor) or the like may be used instead of JFET 5.
【００１５】図１は図４と違って、リード・フレーム１
２のドレイン端子１３にＭＯＳＦＥＴ２のドレインパッ
ド３とＪＦＥＴ５のドレインバッド６をボンディングワ
イヤ９で接続することで、前記のようなサージ電圧の導
入を防止できる。また図４の始動電力入力端子１４はＪ
ＦＥＴ５とは接続しないために、その端子１４から印加
されるサージ電圧や静電気による電圧はＪＦＥＴ５に影
響を及ぼさない。従って、サージ耐量と静電気に対する
耐量は向上する。Unlike FIG. 4, FIG. 1 shows a lead frame 1
By connecting the drain pad 3 of the MOSFET 2 and the drain pad 6 of the JFET 5 to the drain terminal 13 of No. 2 with the bonding wire 9, the introduction of the surge voltage as described above can be prevented. Further, the starting power input terminal 14 of FIG.
Since it is not connected to the FET 5, the surge voltage or the voltage due to static electricity applied from the terminal 14 does not affect the JFET 5. Therefore, the surge resistance and the resistance to static electricity are improved.
【００１６】尚、ＪＦＥＴ５の耐圧を上げて、従来のよ
うに始動電力入力端子１４にＪＦＥＴ５のドレインパッ
ド６を接続しても、勿論、従来よりもサージ耐量や静電
気に対する耐量は向上する。しかし、この場合は図１の
場合に比べて端子が一個多いので、サージ電圧が印加さ
れる確率や静電気が印加される確率は増大し、サージ電
圧や静電気で破壊する割合が増える。そのため、図１の
場合に比べてサージ耐量や静電気に対する耐量は低下す
る。Even if the withstand voltage of the JFET 5 is increased and the drain pad 6 of the JFET 5 is connected to the starting power input terminal 14 as in the conventional case, the surge resistance and the resistance to static electricity are improved as compared with the conventional case. However, in this case, since the number of terminals is one more than that in the case of FIG. 1, the probability that a surge voltage is applied or the probability that static electricity is applied is increased, and the rate of destruction by the surge voltage or static electricity is increased. Therefore, the surge resistance and the resistance to static electricity are lower than in the case of FIG.
【００１７】図２は図１のスイッチング電源制御用半導
体装置を含むスイッチング電源の要部回路図である。図
３の従来回路との違いは、高耐圧スイッチング・トラン
ジスタであるＭＯＳＦＥＴ２のドレインパッド３と始動
電力供給素子であるＪＦＥＴ５のドレインパッド６とが
ドレイン端子１３に接続されている点と、電源回路部２
１に供給される始動電力がトランスを介して行われる点
である。FIG. 2 is a circuit diagram of a main part of a switching power supply including the semiconductor device for controlling the switching power supply shown in FIG. The difference from the conventional circuit of FIG. 3 is that the drain pad 3 of the MOSFET 2 which is a high breakdown voltage switching transistor and the drain pad 6 of the JFET 5 which is a starting power supply element are connected to the drain terminal 13, and the power supply circuit section. Two
That is, the starting power supplied to unit 1 is performed via the transformer.
【００１８】[0018]
【発明の効果】この発明によれば、始動電力供給端子
（ＪＦＥＴ）の耐圧を高電圧スイッチング・トランジス
タ（ＭＯＳＦＥＴ）の耐圧以上とすることで、サージ電
圧および静電気に対する耐量を向上できる。また、この
始動電力供給素子の高電位側主端子（ドレインパッド）
と高耐圧スイッチング・トランジスタの高電位側主端子
（ドレインバッド）とを、パッケージのドレイン端子に
接続することで、さらに、サージ耐量と静電気に対する
耐量を向上できる。According to the present invention, by setting the withstand voltage of the starting power supply terminal (JFET) to be equal to or higher than the withstand voltage of the high voltage switching transistor (MOSFET), the withstand voltage against surge voltage and static electricity can be improved. Also, the high potential side main terminal (drain pad) of this starting power supply element
By connecting the high-potential-side main terminal (drain pad) of the high-voltage switching transistor to the drain terminal of the package, the surge resistance and the resistance to static electricity can be further improved.
【図１】この発明の第１実施例のスイッチング電源制御
用半導体装置の要部構成図FIG. 1 is a configuration diagram of essential parts of a semiconductor device for controlling a switching power supply according to a first embodiment of the present invention.
【図２】図１のスイッチング電源制御用半導体装置を含
むスイッチング電源の要部回路図FIG. 2 is a circuit diagram of a main part of a switching power supply including the semiconductor device for controlling switching power supply of FIG.
【図３】従来のスイッチング電源の要部回路図FIG. 3 is a circuit diagram of a main part of a conventional switching power supply.
【図４】従来のスイッチング電源制御用半導体装置の要
部構成図FIG. 4 is a configuration diagram of a main part of a conventional semiconductor device for controlling a switching power supply.
１ 半導体チップ ２ ＭＯＳＦＥＴ ３ ドレインパッド ４ ソースパッド ５ ＪＦＥＴ ６ ドレインパッド ７ 制御用ＩＣ ８ａ ＶCCパッド ８ｂ パッド ９ ボンディングワイヤ １１ パッケージ １２ リード・フレーム １３ ドレイン端子 １４ 始動電力入力端子 １５ ソース端子 １６ ＶCC端子 １７ 端子 １８ チップ搭載部 １９ 端子部 ２０ スイッチング電源制御用半導体装置 ２１ 電源回路部 ２２ 制御回路部 ３１ 電源 ３２ ヒューズ ３３ 整流器 ３４ 電源コンデンサ ３５ トランス ３６ １次巻線 ３７ａ ２次巻線 ３７ｂ ２次巻線 ３８ ダイオード ３９ 出力コンデンサ ４１ ダイオード ４２ 平滑コンデンサ ５０ 出力端子 ６０ スイッチング電源制御用半導体装置 Ｓ ソース Ｇ ゲート 1 semiconductor chip 2 MOSFET 3 drain pad 4 Source pad 5 JFET 6 drain pad 7 Control IC 8a VCC pad 8b pad 9 Bonding wire 11 packages 12 lead frame 13 Drain terminal 14 Starting power input terminal 15 Source terminal 16 V CC terminal 17 terminals 18 chip mounting part 19 Terminal part 20 Semiconductor device for switching power supply control 21 Power supply circuit 22 Control circuit section 31 power supply 32 fuse 33 Rectifier 34 Power supply capacitor 35 transformers 36 Primary winding 37a secondary winding 37b Secondary winding 38 diode 39 Output capacitor 41 diode 42 Smoothing capacitor 50 output terminals 60 Semiconductor device for switching power supply control S source G Gate
Claims (2)
スの1次巻線に直列に接続されるスイッチング素子と、
前記スイッチング素子を制御する制御回路部と、高電位
側端子がスイッチング電源のトランスの1次巻線に直列
に接続され、前記制御回路の始動電力を導く制御素子と
を同一半導体チップに集積し、前記制御回路は、トラン
スの２次巻線に電圧が発生すると、該２次巻線から電力
が供給され、該電力が供給される際には前記制御素子は
オフし、前記制御素子は前記スイッチング素子以上の定
格電圧を有し、前記スイッチング素子の高電位側端子と
前記制御素子の高電位側端子とを、同一の外部導出端子
に接続することを特徴とするスイッチング電源制御用半
導体装置。1. A high-potential-side terminal is a transformer of a switching power supply.
Switching element connected in series to the primary winding of the switch,
A control circuit section for controlling the switching element , and a high potential
The side terminals are in series with the primary winding of the transformer of the switching power supply.
And a control element that guides the starting power of the control circuit are integrated on the same semiconductor chip.
When a voltage is generated in the secondary winding of the
Is supplied, the control element is
The control element is turned off, and
A semiconductor device for controlling a switching power supply , having a rated voltage, wherein the high potential side terminal of the switching element and the high potential side terminal of the control element are connected to the same external lead-out terminal.
導体装置を備えたスイッチング電源。 2. A half for controlling a switching power supply according to claim 1.
Switching power supply with conductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09129598A JP3381617B2 (en) | 1998-04-03 | 1998-04-03 | Switching power supply controlling semiconductor device and switching power supply having the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09129598A JP3381617B2 (en) | 1998-04-03 | 1998-04-03 | Switching power supply controlling semiconductor device and switching power supply having the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11289044A JPH11289044A (en) | 1999-10-19 |
| JP3381617B2 true JP3381617B2 (en) | 2003-03-04 |
Family
ID=14022489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09129598A Expired - Fee Related JP3381617B2 (en) | 1998-04-03 | 1998-04-03 | Switching power supply controlling semiconductor device and switching power supply having the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3381617B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005108980A (en) | 2003-09-29 | 2005-04-21 | Rohm Co Ltd | Semiconductor device |
| JP4972887B2 (en) * | 2005-06-28 | 2012-07-11 | 富士電機株式会社 | Semiconductor device and semiconductor integrated circuit device |
| JP4957183B2 (en) * | 2006-10-30 | 2012-06-20 | 三菱電機株式会社 | Semiconductor device using backside high voltage integrated circuit |
-
1998
- 1998-04-03 JP JP09129598A patent/JP3381617B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11289044A (en) | 1999-10-19 |
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