JP3376642B2 - Ion implanter - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implantation apparatus, and more particularly to an ion implantation apparatus in which a large ion chamber and a vacuum chamber for accommodating an object to be processed are connected via a flange. Related to the device. [0002] In the process of manufacturing a liquid crystal display or the like,
2. Description of the Related Art Doping a thin film amorphous silicon on a glass substrate with an ion beam obtained by converting a reactive gas into a plasma has been performed. An apparatus for performing such ion beam doping is an ion implantation apparatus. [0003] This type of ion implantation apparatus is formed by connecting an ion chamber for generating ions and a vacuum chamber for accommodating an object to be processed through a flange. However, since the ion chamber and the vacuum chamber need to be electrically insulated, an insulating ring made of ceramic and an O-ring are inserted and connected between the flange on the ion chamber side and the flange on the vacuum chamber side. ing. [0004] However, when manufacturing a large-sized (for example, a diameter of 1 m or more) ion implantation apparatus, a large-diameter insulating ring is required. Will be higher. Further, when a synthetic resin is used instead of ceramics, a gas permeates into a vacuum chamber or an ion chamber from the outside, and a high vacuum cannot be obtained. An object of the present invention is to solve the above-mentioned problems and to provide a large-sized ion implantation apparatus which can be easily manufactured and can obtain a high vacuum. In order to achieve the above object, the present invention provides an ion implantation for connecting an ion chamber for generating ions and a vacuum chamber for accommodating an object to be processed through a flange. in the apparatus, provided between the flange and the vacuum chamber side of the flange of the ion chamber side, and multiple insulating ring in Ri径direction are arranged spaced apart such a synthetic resin, is evacuated between the insulating ring vacuum An exhaust port is provided. According to the above construction, since the insulating ring provided between the flange on the ion chamber side and the flange on the vacuum chamber side is made of synthetic resin, it can be easily manufactured even if both chambers are enlarged. can do. Since the insulating ring is multiple and has a vacuum exhaust port, even if gas permeates from the outside of the outer insulating ring, it is cut off by the inner insulating ring and evacuated, so that the ion chamber and the vacuum chamber The inside is kept at a high vacuum. An embodiment of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic view of an embodiment of the ion implantation apparatus of the present invention. It should be noted that a filament, a reactive gas inlet, a power supply, and the like are omitted for simplicity. Referring to FIG. 1, reference numeral 1 denotes an ion chamber for generating ions, and an extraction electrode system 2 is provided at an exit of the ion chamber. Reference numeral 3 denotes a vacuum chamber for accommodating a workpiece 4 to be subjected to ion implantation. A vacuum exhaust port 5 for exhausting the inside of the vacuum chamber 3 and the ion chamber 1 to a high vacuum is provided at the bottom of the vacuum chamber 3. Is provided. The ion chamber 1 and the vacuum chamber 3 are formed with flanges 6 and 7 for connecting the two chambers 1 and 3 to face each other. Flange 7 on vacuum chamber 3 side
An O-ring 10 is arranged on the O-ring, and an O-ring 11 is arranged outside the O-ring 10. O-ring 10
An insulating ring 8 made of a synthetic resin is disposed on the O, and an insulating ring 9 is disposed on the O-ring 11. Further, an O-ring 12 is disposed on the insulating ring 8, and an O-ring 13 is disposed on the insulating ring 9. Both O-rings 12, 1
A flange 6 on the side of the ion chamber 1 is disposed on the upper side 3, and both flanges 6 and 7 are connected by bolts and nuts (not shown), and both chambers 1 and 3 are fixed. Since the inner insulating ring 8 is exposed to an ion beam, it is preferable to use Teflon, and the outer insulating ring 9 is preferably made of polyethylene, which is cheaper than Teflon. However, if it is easy to manufacture and has insulating properties, another type of synthetic resin is used. It is needless to say that may be used. The flange 7 is provided with a vacuum exhaust port 14 for evacuating the space between the insulating rings 8 and 9 and is connected to a vacuum pump (not shown). Next, the operation of the embodiment will be described. When the ion implantation source is activated, the vacuum exhaust port 5
Then, the vacuum chamber 1 and the ion chamber 3 are evacuated, and an ion beam is injected from the ion source of the ion chamber 1 into the processing target 4 in the vacuum chamber 3, and the processing target 4 is processed. At this time, since the space between the insulating rings 8 and 9 is evacuated from the vacuum exhaust port 14, even if gas (mainly air) permeates from the outside of the outer insulating ring 9, it is cut off by the inner insulating ring 8. Since the gas is exhausted and evacuated, gas from the outside does not permeate into the ion chamber 1 and the vacuum chamber 3, and the inside of the ion chamber 1 and the vacuum chamber 3 is kept at a high vacuum (10 ^-8 torr or less). It is. Since the insulating rings 8 and 9 are made of a synthetic resin, the chambers 1 and 3 can be easily manufactured even if the size of the chambers is as large as 1 m or more. As described above, according to this embodiment, since the insulating rings 8 and 9 provided between the flange 6 and the flange 7 are made of synthetic resin, even if both chambers 1 and 3 are enlarged, they can be easily manufactured. can do. Insulating rings 8 and 9
Is double and has a vacuum exhaust port 14, so even if a gas permeates from the outside of the outer insulating ring 9, it is cut off by the inner insulating ring 8 and evacuated. The inside and the inside of the vacuum chamber 3 are kept at a high vacuum. In this embodiment, the case where the insulating tube is double is described. However, the present invention is not limited to this case, and the insulating tube may be triple or more. Further, in this embodiment, the vacuum exhaust port is provided on the flange on the vacuum chamber side, but may be provided on the flange on the ion chamber side or on both flanges. In summary, according to the present invention, the following excellent effects are exhibited. Since a plurality of insulating rings made of synthetic resin and a vacuum exhaust port for evacuating the space between the insulating rings are provided between the flange on the ion chamber side and the flange on the vacuum chamber side, the production is simplified. A large-sized ion implantation apparatus that can easily obtain a high vacuum can be realized.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of an embodiment of the ion implantation apparatus of the present invention. [Description of Signs] 1 Ion chamber 3 Vacuum chamber 4 Workpiece 6, 7 Flange 8, 9 Insulation ring 14 Vacuum exhaust port

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H01J 37/317-37/36 H01J 37/18 C23C 14/48 H01L 21/265

Claims (1)

(57) [Claim 1] In an ion implantation apparatus for connecting, via a flange, an ion chamber for generating ions and a vacuum chamber for accommodating an object to be processed, a flange on the ion chamber side is provided. It is provided between the vacuum chamber side of the flange, and multiple insulating ring in Ri径direction are arranged spaced apart such a synthetic resin, further comprising a vacuum exhaust port for evacuating between the insulating ring Characteristic ion implanter.