JP3373763B2 - Breakthrough detection device for exhaust gas treatment equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for manufacturing precision electronic parts such as semiconductors and liquid crystal elements (hereinafter referred to as "semiconductor manufacturing apparatus").
Of the manufacturing process gas discharged from the exhaust gas treatment apparatus, particularly of the exhaust gas treatment apparatus for detoxifying the ClF ₃ gas used for cleaning the reaction chamber and the gas flow path of the semiconductor manufacturing apparatus. The present invention relates to a breakthrough detection device suitable for detecting breakthrough when it is time to replace a detoxification reaction tank.

[0002]

2. Description of the Related Art In a semiconductor manufacturing apparatus, various manufacturing process gases are used, but most of the manufacturing process gases are harmful gases and cannot be directly discharged to the atmosphere. Therefore, the manufacturing process gas discharged from the semiconductor manufacturing apparatus is removed, that is, rendered harmless, through the exhaust gas processing apparatus.

FIG. 3 is a diagram showing an outline of such an exhaust gas treatment facility. As shown in the figure, the semiconductor manufacturing apparatus 103 is supplied with a deposition gas such as SiH ₄ gas from the gas supply apparatus 101, and the gas supply apparatus 102 is used to clean the reaction chamber and the gas flow path of the semiconductor manufacturing apparatus 103 with ClF. ₃ Gas, etc. are supplied. Deposition gas such as SiH ₄ gas or cleaning gas such as ClF ₃ gas from the semiconductor manufacturing apparatus 103 is sent to the exhaust gas treatment apparatus 105 by the dry pump 104, and after being detoxified by the exhaust gas treatment apparatus 105, the factory duct. 10
6 is discharged.

The exhaust gas treatment device 105 includes a depot gas reaction tank for removing depot gas such as SiH ₄ gas and ClF ₃ gas.
A cleaning gas reaction tank for removing a cleaning gas such as a gas is provided, and the deposition gas and the cleaning gas are removed respectively. The processing amount of the depot gas or the cleaning gas that can be removed by the depot gas reaction tank or the cleaning gas reaction tank is determined, and if the processing amount exceeds this amount, the detoxification effect is significantly reduced. Therefore, when the processing amount is exceeded, the life (replacement time) of the reaction tank, that is, breakthrough, is regarded as the breakthrough, and the depot gas reaction tank and the cleaning gas reaction tank are replaced.

By the way, it is important to accurately detect the replacement time of the deposition gas reaction tank or the cleaning gas reaction tank, that is, the breakthrough. If the breakthrough is too early, a reaction tank having a sufficient detoxification function will be replaced, resulting in a waste of cost, and if it is too late, harmful gas will be emitted.

[0006] Conventionally, a method for detecting the breakthrough of the reaction tank,
In particular, the following methods (1) and (2) have been mentioned as methods for detecting the breakthrough of the reaction tank for removing the cleaning gas such as ClF ₃ gas. A method in which a gas detector is provided on the discharge side from the reaction tank and the concentration of the cleaning gas is detected by the gas detector to detect breakthrough as breakthrough when the concentration exceeds a predetermined value.

A method of measuring the weight of a reaction tank and detecting the breakthrough as a breakthrough when the weight increases by a predetermined value or more.

[0008]

The method using the gas detector described above is normally performed when the gas detector is exposed to a cleaning gas such as ClF ₃ gas for a long time or when calibration is not performed for 6 months or more. There was a problem that gas might not be detected. In addition, there is also a problem that calibration takes time and cost. The method using the amount of weight increase has a problem that the amount of weight increase is small relative to the weight of the column and accurate detection cannot be performed.

The present invention has been made in view of the above points, and it is an object of the present invention to solve the above problems and provide a breakthrough detection device for a manufacturing process exhaust gas treatment device which can detect the breakthrough of a reaction tank with high accuracy. To aim.

[0010]

In order to solve the above-mentioned problems, the invention according to claim 1 is provided with a detoxification reaction tank, is connected to a manufacturing apparatus by a communication circuit, and transmits a signal between the manufacturing apparatus. Exhaust gas equipped with breakthrough detection means for detecting breakthrough which is the time to replace the abatement reaction tank of an exhaust gas treatment device for removing a manufacturing process exhaust gas discharged from the manufacturing device while transmitting and receiving in an abatement reaction tank In the breakthrough detection device of the processing device, the manufacturing device is preset with the discharge time per exhaust of the manufacturing process exhaust gas and the discharge flow rate per unit time at the time of discharge, and the breakthrough detection means is manufactured through the communication circuit. The breakthrough is detected from the number and / or the release time of the exhaust gas release command sent from the device to the exhaust gas treatment device.

The invention according to claim 2 is the breakthrough detection device for an exhaust gas treatment device according to claim 1, wherein the breakthrough detection means detects the breakthrough based on the number and / or the emission time of the exhaust gas discharge command. In addition to the means, a means for detecting breakthrough by detecting the concentration of exhaust gas discharged from the abatement reaction tank with a gas detector and / or a means for detecting breakthrough based on an increase in the weight of the reaction tank are provided. To do.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 2 is a diagram showing the configuration of this type of manufacturing process exhaust gas treatment apparatus. In FIG. 2, 8
Is a deposition gas reaction tank for removing deposition gas such as deposition gas, 9
Is a cleaning gas reaction tank for removing a cleaning gas such as ClF ₃ . The depot gas reaction tank 8 is one in which a detoxifying agent (chemical) that detoxifies the depot gas by physical adsorption or chemical reaction is filled in the reaction tank container, and the cleaning gas reaction tank is ClF ₃ gas in the reaction tank container. The cleaning gas is filled with a detoxifying agent (medicine) that makes it harmless by physical adsorption or chemical reaction.

The depot gas from the semiconductor manufacturing equipment which flows into the inflow port 11 passes through the depot side inflow valve 2 and the depot gas reaction tank 8
The depot gas component such as SiH ₄ gas is detoxified (detoxified) by physical adsorption or chemical reaction with the detoxifying agent in the depot gas reaction tank 8 and passes through the depot side outflow valve 4 to the depot outlet. 12 is discharged to the factory duct (see the factory duct 106 in FIG. 3). Further, a cleaning gas such as ClF ₃ gas flows into the inflow port 11, and the cleaning side inflow valve 3
Flow into the cleaning gas reaction tank 9 through which the ClF ₃ gas component is detoxified (detoxified) by physical adsorption or chemical reaction with the detoxifying agent, detoxified, and discharged to the cleaning side. It is discharged from the cleaning outlet 13 to the factory duct through the valve 5 and the cleaning side outlet valve 7.

Reference numeral 1 denotes a bypass valve, which is a deposition gas reaction tank 8
Alternatively, when an obstacle such as clogging occurs in the cleaning gas reaction tank 9 and the gas pressure of the depot gas or the gas pressure of the cleaning gas is abnormally high, the depot side inflow valve 2 or the cleaning side inflow valve 3 is closed and the bypass valve 1 is opened. At the same time, the depot side outlet valve 6 or the cleaning side outlet valve 7 is opened to discharge the depot gas or the cleaning gas to the factory duct.

Operation valves A such as the bypass valve 1, the depot side inflow valve 2, the cleaning side inflow valve 3, the depot side outflow valve 4, the cleaning side outflow valve 5, the depot side outflow valve 6 and the cleaning side outflow valve 7. is a valve which operates by N ₂ gas supplied from N ₂ source through the N ₂ inlet 14. Also, N ₂
The gas is supplied to the actuation valve A and also to an airtightness test bracket B (not shown) for testing the airtightness of each part, and further, the valve 15, the pressure reducing valve 16, the flowmeter with contacts 17, the check valve. The purge gas C is supplied to the depot side through the valve 18.

A gas detector 19 is provided on the outlet side of the depot gas reaction tank 8, and a temperature sensor 20 and a temperature indicator 21 for detecting the temperature inside the reaction tank are further provided. Further, an inflow valve SV is provided on the outlet side of the cleaning gas reaction tank 9.
A gas detector 22 is provided via E1 and the outflow valve SVE2, and a temperature sensor 23 and a temperature indicator 24 for detecting the temperature in the reaction tank are further provided. Further, a weight scale 25 for detecting the weight of the cleaning gas reaction tank 9 and a load indicator 26 are provided.

Reference numerals 27 and 28 denote pressure switches. The pressure switch 27 has a high pressure (for example, 0.04 Kgf) for the deposit gas or the cleaning gas flowing from the inlet 11.
/ Cm ² (G) or more), an alarm is issued, and when abnormally high pressure (eg, 0.1 Kgf / cm ² (G) or more) is opened, the bypass valve 1 is opened together with the alarm, and the depot gas or cleaning gas is discharged to the depot outlet. 12 or the cleaning outlet 13 is discharged to the factory duct. Also, pressure switch 2
8 issues an alarm when the pressure of the N ₂ gas flowing into the N ₂ inlet 14 is below a predetermined pressure for actuating the actuation valve A.

Reference numeral 29 is a breakthrough detector for a depot, which is a gas detector 1
When the concentration of the depot gas detected at 9 becomes equal to or higher than a predetermined set value, a replacement command signal for the depot gas reaction tank 8 is output. A breakthrough detector 30 for ClF ₃ outputs a replacement command signal for the cleaning gas reaction tank 9 when the concentration of the cleaning gas ClF ₃ gas detected by the gas detector 22 exceeds a predetermined set value. Reference numeral 31 is a breakthrough detector for ClF ₃ , which outputs a replacement command signal for the cleaning gas reaction tank 9 when the value indicated by the load indicator 26 exceeds a set value. Reference numeral 32 is an alarm device that issues an alarm when the temperature of the depot gas reaction tank 8 indicated by the temperature indicator 21 exceeds a predetermined set value.

Reference numeral 33 is an alarm device that issues an alarm when the temperature of the cleaning gas reaction tank 9 indicated by the temperature indicator 24 exceeds a predetermined set value. Further, 34 is a alarm to alert when the contact with the flow meter 17 when detecting a low flow rate of N ₂ gas, namely purge flow of N ₂ gas is low. Further, 35 to 38 are flexible pipes, which are provided on the input / output side of the deposition gas reaction tank 8 and the input / output side of the cleaning gas reaction tank 9 so that the replacement work of these reaction tanks can be easily performed.

FIG. 1 is a diagram showing an example of signals transmitted and received between the semiconductor manufacturing apparatus 103 and the exhaust gas treatment apparatus 105. As shown in the figure, the semiconductor manufacturing apparatus 103 transfers the depot command signal S1 and the cleaning command signal S to the exhaust gas treatment device 105.
2. Deposition raw gas release command signal S3 and cleaning raw gas release command signal S4 are output. Further, the exhaust gas treatment device 105 outputs a depot operation OK signal S5, a depot reaction tank replacement preparation OK signal S6, a cleaning operation OK signal S7, a cleaning reaction tank replacement preparation OK signal S8 and a residual gas releasing signal S9 to the semiconductor manufacturing apparatus 103. To be done. From the exhaust gas treatment device 105 to the semiconductor manufacturing device 103, a serious failure signal S10 indicating a serious failure, a minor failure signal S12 indicating a minor failure, and a reaction vessel replacement signal S13 are also output.

The serious failure signal S10 is a signal that is output when the failure is serious and exhaust gas treatment is impossible, and here, the deposition gas pressure and the cleaning gas pressure detected by the pressure switch 27 are abnormally high (for example, 0. 1 Kgf / c
m ² (G) or more), it will be issued in case of electric leakage and power failure. Further, the light failure signal S12 is a signal output when the failure is light, and here, the deposition gas pressure or the cleaning gas pressure detected by the pressure switch 27 is high (for example, 0.04 Kgf / cm ² (G) or more). If the pressure of the N ₂ gas detected by the pressure switch 28 is less than or equal to the predetermined pressure for operating the operating valve, the purge flow rate of the N ₂ gas is small and the alarm 34 issues an alarm, the depot gas reaction tank It is issued when the temperature of 8 is high and the alarm 32 issues an alarm, and when the temperature of the cleaning gas reaction tank 9 is high and the alarm 33 issues an alarm.

Further, the reaction tank exchange signal S13 is used when the depot breakthrough detector 29 detects that the concentration of the depot gas detected by the gas detector 19 is equal to or higher than a predetermined set value and the time for exchanging the depot gas reaction tank 8 is detected. The replacement command signal output to the above, the concentration of ClF ₃ gas detected by the gas detector 22 by the breakthrough detector 30 for ClF ₃ exceeds a predetermined set value, and the replacement time of the cleaning gas reaction tank 9 is detected. The replacement command signal output in this case and the breakthrough detector 31 for ClF ₃
Is a replacement command signal output when the value indicated by the load indicator 26 is equal to or greater than the set value and the replacement time of the cleaning gas reaction tank 9 is detected.

In the exhaust gas treatment facility having the structure shown in FIG. 3, the operator is usually on the side of the semiconductor manufacturing apparatus 103. Breakthrough detector for depot 29 with exhaust gas treatment device 105
And the breakthrough detectors 30 and 31 for ClF ₃ detect the replacement time of the depot gas reaction tank 8 and the cleaning gas reaction tank 9,
When the reaction tank exchange signal S13 is output to the semiconductor manufacturing apparatus 103, the operator goes to the exhaust gas treatment apparatus 105,
The deposit gas reaction tank 8 or the cleaning gas reaction tank 9 is replaced. However, the depot breakthrough detector 29 and ClF
₃ breakthrough detectors 30 and 31 for breakthrough detection, especially ClF ₃
The breakthrough detection based on the gas concentration and the breakthrough detection based on the weight by the breakthrough detectors 30 and 31 have a problem that the breakthrough cannot be detected with high accuracy as described above.

Therefore, in this embodiment, as shown in FIG. 1, a counter 40 for counting the number of times the cleaning raw gas release command signal S4 is output from the semiconductor manufacturing apparatus 103 and / or the cleaning gas release time is provided. The discharge amount of the cleaning gas is detected from the count value, and the replacement time of the cleaning gas reaction tank 9 is detected.

In the exhaust gas treating apparatus having the structure shown in FIG. 2, a cleaning gas (mainly ClF) is used for cleaning the reaction chamber and the gas flow path of the semiconductor manufacturing apparatus 103 (see FIG. 3) that has flowed in from the inlet 11 of the exhaust gas treating apparatus. ₃ gas) flows into the cleaning gas reaction tank 9 and is detoxified by physical adsorption or chemical reaction by the detoxifying agent filled in the reaction tank container. At this time, the detoxifying agent gradually loses its harmless performance from the side closer to the inflow port into which the cleaning gas flows. 1
The amount of cleaning gas removed in the cleaning gas reaction tank of the book is fixed, and when the amount of inflowing cleaning gas reaches that amount, the cleaning gas reaction tank 9 loses its harmless performance.

Since the gas inflow amount flowing into the cleaning gas reaction tank 9 is determined by the product of the gas inflow amount per unit time and the inflow time, the inflow amount per unit time flowing into the exhaust gas treating apparatus and the inflow per cleaning operation. The time is predetermined by the semiconductor manufacturing apparatus 103 side. The inflow timing and inflow time of the cleaning gas can be confirmed by the exhaust gas processing device 105 of FIG. 1 receiving the cleaning raw gas release command signal S4 from the semiconductor manufacturing device 103. Therefore, this cleaning raw gas release command signal S4
Is provided with a counter 40 for measuring the number of output times and the cleaning time (cleaning gas discharge time), and the number of cleanings and the cleaning time that can be processed in the cleaning gas reaction tank 9 are set in advance in the counter 40.
When either the number of cleanings or the cleaning time reaches a set value, the cleaning gas reaction tank 9 is replaced with the reaction tank replacement signal S13 to the semiconductor manufacturing apparatus 103.
Is output to notify the breakthrough of the cleaning gas reaction tank 9.

As described above, the cleaning gas reaction tank 9
Is different from the breakthrough detection based on the gas concentration and weight by the breakthrough detectors 30 and 31 for ClF ₃ , the output of the cleaning raw gas release command signal S4 output from the semiconductor manufacturing apparatus 103 to the exhaust gas processing apparatus 105. Since the detection is performed based on the number of times and the cleaning time, the breakthrough of the cleaning gas reaction tank 9 can be accurately detected. Moreover, since the number of times the cleaning raw gas release command signal S4 is output and the cleaning time can be measured only by providing a counter, the configuration of the breakthrough detection device becomes extremely simple.

In the above embodiment, the detection of the breakthrough of the cleaning gas reaction tank 9 is shown as an example, but the present invention is not limited to this, and the deposition gas per unit time in the depot operation of the semiconductor manufacturing apparatus is not limited thereto. When the flow rate and the depot operation time are predetermined, the depot raw gas release command signal S
3 is provided with a counter for counting (measuring) the number of outputs and the depot operation time, and the number of depot operations and the depot gas discharge (inflow) time that can be processed in the depot gas reaction tank 8 are set in the counter, and the number of depot operations or the depot gas discharge When either of the (inflow) times has reached a set value, it is configured to output a reaction tank exchange signal S13 to the semiconductor manufacturing apparatus 103 to notify the breakthrough of the depot gas reaction tank 8 as the replacement time of the depot gas reaction tank 8. May be.

Although monosilane (SiH ₄ ) is shown as the deposition gas in the above example, examples of the deposition gas are phosphane (PH ₃ ), arsine (AsH ₃ ), diborane (B ₂ H ₆ ), disilane (Si ₂ H _6). ) And so on. Also, the cleaning gas is not limited to ClF ₃ gas.

[0030]

As described above, according to the first aspect of the present invention, the breakthrough detection means breaks from the number and / or the discharge time of the exhaust gas discharge command sent from the manufacturing apparatus through the communication circuit. Since the excess is detected, it is possible to provide an accurate breakthrough detection device having a simple structure.

According to the second aspect of the present invention, the breakthrough detection means is a means for detecting the breakthrough based on the number of exhaust gas discharge commands and / or the discharge time, and a gas detector is used to remove the detoxification reaction tank. Since a means for detecting the breakthrough by detecting the concentration of the discharged gas and / or a means for detecting the breakthrough due to the increase in the weight of the reaction tank is provided, the breakthrough can be surely detected.
It is possible to prevent harmful gas from being emitted from the exhaust gas treatment device as much as possible.

The invention described in each claim is ClF ₃
The invention is not limited to cleaning using gas, but a batch-type manufacturing apparatus can provide an accurate breakthrough detection apparatus regardless of the process.

[Brief description of drawings]

FIG. 1 is a diagram showing a signal transmission / reception relationship between an exhaust gas treatment apparatus equipped with a breakthrough detection device of the present invention and a semiconductor manufacturing apparatus.

FIG. 2 is a diagram showing a configuration of an exhaust gas treatment apparatus including a breakthrough detection device of the present invention.

FIG. 3 is a diagram showing an outline of an exhaust gas treatment facility.

[Explanation of symbols]

1 Bypass Valve 2 Depot Side Inflow Valve 3 Cleaning Side Inflow Valve 4 Depot Side Outflow Valve 5 Cleaning Side Outflow Valve 6 Depot Side Outlet Valve 7 Cleaning Side Outlet Valve 8 Depot Gas Reaction Tank 9 Cleaning Gas Reaction Tank 11 Inlet 12 For Depot Outlet 13 Cleaning Outlet 14 N ₂ Inlet 15 Valve 17 Flowmeter with Contact 19 Gas Detector 20 Temperature Sensor 21 Temperature Indicator 22 Gas Detector 23 Temperature Sensor 24 Temperature Indicator 25 Weight Scale 26 Load Indicator 27 Pressure switch 28 pressure switch 29 depot for breakthrough detector 30 ClF ₃ for breakthrough detectors 31 ClF ₃ for breakthrough detector 32 alarm device 33 alarms 34 alarm 40 counter 103 semiconductor manufacturing device 105 an exhaust gas treatment apparatus

─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) B01D 53/30 B01D 53/34

Claims (2)

(57) [Claims] 1. An abatement reaction tank, comprising a detoxification reaction tank, connected to a manufacturing apparatus by a communication circuit, and transmitting and receiving a signal to and from the manufacturing apparatus while producing process exhaust gas discharged from the manufacturing apparatus. In a breakthrough detection device for an exhaust gas treatment device, which comprises a breakthrough detection means for detecting breakthrough when it is time to replace the detoxification reaction tank of the exhaust gas treatment device for detoxification in a tank, the manufacturing device is a manufacturing process exhaust gas discharge 1 The discharge time per time and the discharge flow rate per unit time at the time of discharge are set in advance, and the breakthrough detection means is the number of exhaust gas emission commands sent from the manufacturing apparatus to the exhaust gas processing apparatus via the communication circuit. And / or a breakthrough detection device for an exhaust gas treatment device, which detects breakthrough based on a release time. 2. The breakthrough detection means detects the concentration of exhaust gas discharged from the abatement reaction tank with a gas detector in addition to means for detecting breakthrough based on the number and / or release time of the exhaust gas discharge command. The breakthrough detection device for an exhaust gas treatment apparatus according to claim 1, further comprising: a means for detecting breakthrough and / or a means for detecting breakthrough based on an increase in weight of the reaction tank.