JP3373468B2 - Semiconductor manufacturing equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus using vacuum ultraviolet light.

[0002]

2. Description of the Related Art Reference "Japanese Patent Laid-Open No. 7-300678" describes that
There is disclosed a semiconductor manufacturing apparatus that uses vacuum ultraviolet light to perform film formation and cleaning of a wafer. Such a semiconductor manufacturing apparatus mainly includes a vacuum ultraviolet light generator (hereinafter, referred to as a light source) and a reaction chamber. As the light source, an excimer lamp (Xe ₂ discharge tube or the like) that emits light in an atmosphere of atmospheric pressure or higher is used. The light source and the reaction chamber are separated by a window made of a glass plate (quartz or the like) for maintaining the degree of vacuum in the reaction chamber. Vacuum ultraviolet light from the light source passes through this window and is introduced into the reaction chamber. In the reaction chamber, vacuum ultraviolet light is used to induce a predetermined reaction required for film formation and cleaning.

[0003]

However, as the above-mentioned window, it is necessary to use a window having a large diameter and a large thickness in order to prevent the window from being destroyed by atmospheric pressure. Such a window is very expensive, and the initial transmittance is 50% or less,
The transmittance is further 30 due to deterioration of the glass due to aging.
%.

Further, in the case of the film forming apparatus, not only the wafer surface but also the surface of the window inside the reaction chamber is exposed to the reaction gas, so that a film is deposited on the window and the window becomes cloudy. Similarly, also in the case of the cleaning device, the window becomes cloudy due to the adherence of decomposed products. As a result, the transmittance of the window is lowered and the irradiance of vacuum ultraviolet light in the reaction chamber is lowered. Therefore, the film forming and cleaning speeds become slow, which causes a problem in mass productivity.

Conventionally, as measures against such window fogging, 1) a method of spraying an inert gas such as N ₂ or Ar which does not contribute to the reaction from the reaction chamber side to the window surface,
2) A method of applying a film or applying an oil film on the window surface is known.

However, in the above method 1), since the inert gas is flown into the reaction chamber, the reaction gas in the reaction chamber is diluted and the film forming and cleaning speeds are slowed. Further, in the case of a film forming apparatus, in this method, the raw material gas wraps around the window surface, and a film is deposited on the window surface.

On the other hand, in the above method 2), the transmittance of vacuum ultraviolet light deteriorates, and the speed of film formation and cleaning slows down. Also,
Not only the oil film, but also the film, depending on the material,
Contamination of the wafer such as C (carbon) occurs.

[0008] Therefore, conventionally, the advent of a semiconductor manufacturing apparatus capable of introducing vacuum ultraviolet light into a reaction chamber with good efficiency has been desired.

[0009]

Therefore, according to the semiconductor manufacturing apparatus of the invention of this application, a vacuum ultraviolet light generating portion which is a region for injecting energy into the luminescent gas to generate vacuum ultraviolet light, and the vacuum ultraviolet light generating portion. It is equipped with a reaction chamber in which a predetermined reaction is induced by vacuum ultraviolet light from the ultraviolet light generation section, and a support table provided in the reaction chamber for supporting a substrate to be treated using this reaction. . In this semiconductor device,
It is preferable that the vacuum ultraviolet light generation section is defined inside the reaction chamber.

As described above, by constructing such that no partition such as a window is provided between the vacuum ultraviolet light generating section and the reaction chamber, the vacuum ultraviolet light from the vacuum ultraviolet light generating section has the conventional problem. It is introduced into the reaction chamber through the propagation path of the vacuum ultraviolet light from the vacuum ultraviolet light generation unit to the reaction chamber without being damaged by the window. Therefore, the amount of light is increased as compared with the related art, and as a result, the processing speed is improved.

[0011]

Further, by providing a vacuum ultraviolet light generator in the reaction chamber, vacuum ultraviolet light necessary for the reaction can be generated in the reaction chamber. In the reaction chamber, processing using the reaction is also performed. Therefore, the problem of loss due to the window is solved. Moreover, since the distance between the vacuum ultraviolet light generator and the substrate can be shortened, the light does not spread and the processing speed can be further improved.

Further, preferably, in the vacuum ultraviolet light generator,
An electrode covered with a dielectric film may be provided.

Such an electrode can be easily installed in the reaction chamber. Luminescent gas is introduced into the reaction chamber together with the reaction gas. Because it is configured like this,
Energy is injected into the luminescent gas by the dielectric barrier discharge, and vacuum ultraviolet light can be generated.

Further, it is preferable that the above-mentioned electrode has an electrically conductive film provided on the surface of an insulating tubular body which also serves as a water channel for cooling water.

The conductor film is provided at a predetermined position on the surface of the tubular body so that the electrodes are not short-circuited. Since the electrode is cooled by the cooling water, high electric power can be applied to the electrode, and thus the output of vacuum ultraviolet light can be increased.

The above-mentioned tubular body extends, for example, so that the electrodes have a comb shape. Further, the aforementioned tubular body may be extended so that the electrode has a spiral shape.

Further, the above-mentioned electrode is covered with two kinds of dielectric films, and the dielectric constant of one of the dielectric films provided on the side facing the support with respect to the electrode is determined by the dielectric constant of the other dielectric film. It is preferable to make it larger than the rate.

For example, it is preferable that one of the above-mentioned dielectric films is a silicon nitride film and the other of the above-mentioned dielectric films is quartz glass.

Since the high dielectric film has a large capacitive coupling in the high frequency, the high frequency energy is concentrated on the high dielectric film side. Therefore, vacuum ultraviolet light can be efficiently generated on the high dielectric film side, that is, on the support base side.

Further, the film thickness d2 of the portion of the dielectric film provided on the side facing the electrode support base is equal to the thickness of the dielectric film portion provided on the side opposite to the electrode support base. It may be smaller than d1.

For example, when the above-mentioned dielectric film is made of quartz glass, it is preferable that the relationship of d1 ≧ 2 × d2 is satisfied.

With such a structure, the dielectric film portion having a small film thickness has a higher capacitive coupling than the dielectric film portion having a large film thickness in terms of high frequency, and the dielectric film having a small film thickness can be formed. The high frequency energy is concentrated on the side of the part. Therefore, vacuum ultraviolet light can be efficiently generated on the side of the dielectric film having a small film thickness, that is, on the side of the support base.

[0024]

[0025]

[0026]

[0027]

[0028]

[0029]

Further, in the semiconductor manufacturing apparatus of the present invention, it is preferable that the vacuum ultraviolet light generating section is configured as a cavity for plasma discharge, and the cavity communicates with the reaction chamber.

According to this structure, energy can be injected into the luminescent gas introduced into the cavity by high-density plasma discharge, and vacuum ultraviolet light can be generated.

[0032]

[0033]

[0034]

[0035]

[0036]

[0037]

[0038]

Further, in the semiconductor manufacturing apparatus of the present invention, preferably, a metal net is provided at the boundary between the cavity and the reaction chamber.

When the metal net is provided in this way, the vacuum ultraviolet light generated in the cavity can be transmitted to the reaction chamber side and also serve as a trap for charged particles.

Further, when charged particles in the plasma hit the cavities to cause contamination, a glass plate for shielding sputtered substances may be provided between the metal net and the support.

[0042]

[0043]

[0044]

[0045]

[0046]

[0047]

[0048]

[0049]

[0050]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. It should be noted that the drawings merely schematically show the shapes, sizes, and positional relationships so that the present invention can be understood. The conditions such as numerical values and materials described below are merely examples. Therefore, the present invention is not limited to this embodiment.

[First Embodiment] FIG. 1 is a sectional view showing the structure of a semiconductor manufacturing apparatus according to the first embodiment. This semiconductor manufacturing apparatus includes a vacuum ultraviolet light generator (hereinafter referred to as a light source) 10, a reaction chamber 12, and a stage 14. The light source 10 is a region that injects energy into the luminescent gas to generate vacuum ultraviolet light. According to this device,
The vacuum ultraviolet light generated by the light source 10 is emitted into the reaction chamber 12. And by the vacuum ultraviolet light from this light source 10,
A predetermined reaction is induced in the reaction chamber 12. Further, a stage 14 as a support is provided inside the reaction chamber 12. A substrate 3 such as a silicon wafer is placed on the stage 14.
0 is supported. This substrate 30 is processed using the above reaction.

In this semiconductor manufacturing apparatus, the light source 1
The pressure of 0, the internal pressure of the reaction chamber 12, and the pressure of the propagation path of the vacuum ultraviolet light from the light source 10 to the reaction chamber 12 are set to the same pressure. To configure like this, in this example,
A light source 10 is defined inside the reaction chamber 12. Therefore, in the reaction chamber 12, generation of vacuum ultraviolet light, induction of reaction by vacuum ultraviolet light, and processing of the substrate using the reaction are performed.

The light source 10 described above is provided with an electrode covered with a dielectric film. The detailed structure of this electrode is shown in FIG.
Shown in. FIG. 2A shows a cross section of the electrode, and FIGS. 2B and 2C show examples of the planar shape of the electrode.

As shown in FIG. 2A, the electrode is formed by providing a conductor film 18 on the surface of an insulating pipe 16.
The pipe 16 is made of quartz glass, alumina, or the like, and the conductor film 18 is made of aluminum or copper. The shape of the cross section of the pipe 16 shown in FIG. 2A, which is perpendicular to the longitudinal direction, is a rectangle. The hollow portion of the pipe 16, which is a tubular body, is used as a water passage 20 for cooling water, and cooling water can flow in the pipe 16. As described above, since the electrode is cooled by the cooling water, high electric power can be applied to the electrode, and high output of vacuum ultraviolet light can be achieved.

FIG. 2B shows an example in which the pipe 16 is extended so that the planar shape of the electrode is a comb shape. The pipe 16 is configured such that a plurality of sub-pipes 16b having the same length and arranged in parallel are connected between two long main pipes 16a that are parallel to each other. The hollow portion of the main pipe 16a and the hollow portion of the auxiliary pipe 16b are in communication with each other. Therefore, the cooling water introduced into the one main pipe 16a flows to the other main pipe 16a through each sub-pipe 16b.

Further, as described above, the outer surfaces of the main pipe 16a and the sub pipe 16b are covered with the conductor film 18 (the black portion in FIG. 2B), but any one of the sub pipes 16b. One end is an insulating portion 22 where the conductor film 18 is not provided.
(White portion in FIG. 2B). Therefore, either one of the connecting portion between the sub pipe 16b and the one main pipe 16a and the connecting portion between the sub pipe 16b and the other main pipe 16a is electrically insulated. In this example, one main pipe 16 is alternately arranged in the arrangement order of the sub pipes 16b so that the adjacent sub pipes 16b are in different electrical states.
An insulating portion 22 is provided on the a side or the other main pipe 16a side. Then, one main pipe 16a and the other main pipe 16a
The AC power supply 24 is connected between and. AC power supply 24
Is operated, a discharge can be generated between the auxiliary pipe 16b electrically connected to the one main pipe 16a and the auxiliary pipe 16b electrically connected to the other main pipe 16a.

FIG. 2C shows an example in which the pipe 16 is extended so that the planar shape of the electrode is spiral. The pipe 16 is composed of two main pipes 16a that are adjacent to each other and extend spirally at a constant interval, and one sub pipe connected between the ends of the main pipes 16a at the center of the spiral. It is composed of a tube 16b. The hollow portion of the main pipe 16a and the hollow portion of the auxiliary pipe 16b are in communication with each other. Therefore, the cooling water introduced into the one main pipe 16a flows into the other main pipe 16a through the sub pipe 16b.

Further, the outer surface of the main pipe 16a is covered with a conductor film 18 (black portion in FIG. 2C), but the surface of the sub-pipe 16b is an insulating portion where the conductor film 18 is not provided. 22 (white portion in FIG. 2C). Therefore, the one main pipe 16a and the other main pipe 16a are electrically insulated. And one main pipe 16a
An AC power supply 24 is connected between the other main pipe 16a. When the AC power supply 24 is operated, one of the main pipes 16
A discharge can be generated between a and the other main tube 16a.

In the reaction chamber 12, a flat plate electrode having any of the shapes described above is placed in a state of facing the substrate 30 on the stage 14. The periphery of this plate electrode is covered with a dielectric film. The electrode in this example is coated with two types of dielectric films. That is, the surface of the electrode facing the stage 14 is covered with the high dielectric film 26, while the remaining part of the electrode is covered with the low dielectric film 28. As described above, the upper and lower sides of the electrode are sandwiched between the low dielectric film 28 and the high dielectric film 26. The dielectric constant of the high dielectric film 26 is larger than that of the low dielectric film 28. For example, it is preferable that the high dielectric film 26 is a silicon nitride film and the low dielectric film 28 is quartz glass. Since the high-dielectric film 26 has a larger capacitive coupling in terms of high frequency than the low-dielectric film 28, the high-frequency energy is concentrated on the high-dielectric film 26 side of the electrode, that is, the stage 14 side. Therefore, the reaction chamber 12
When a luminescent gas is introduced into the chamber, the electrode stage 14
The vacuum ultraviolet light 34 can be efficiently generated on the side.

Further, as shown in FIG. 3, the electrode may be covered with only one kind of dielectric film. FIG. 3 shows a sectional view of a modified example of the semiconductor manufacturing apparatus. As shown in the figure, the electrode of this example is covered with quartz glass as the dielectric film 32. The film thickness d2 of the portion of the dielectric film 32 on the side of the electrode facing the stage 14 is set to the film thickness d2 of the portion of the dielectric film 32 on the side of the electrode opposite to the stage 14.
It is smaller than 1. That is, the film thicknesses d1 and d2 are set so that d1 >> d2. Preferably,
It is preferable that the relationship of d1 ≧ 2 × d2 is satisfied. For example, when the film thickness d1 is 0.5 to 5 mm, the film thickness d2
Is preferably 0.25 to 2.5 mm. Since the capacitance of the dielectric film 32 having a smaller thickness is greater than that of the dielectric film 32 having a large thickness in terms of high frequency, a high frequency is generated on the side of the dielectric film 32 having a small thickness. Energy is concentrated. Therefore, when the luminescent gas is introduced into the reaction chamber 12, the vacuum ultraviolet light 34 can be efficiently generated on the side of the dielectric film 32 having a small thickness, that is, on the side of the stage 14. As described above, since the electrode of this example only needs to be covered with one kind of dielectric film, the cost can be reduced as compared with the case of using the above two kinds of dielectric films.

Even if the dielectric film covering the electrodes becomes cloudy, it does not affect the generation of vacuum ultraviolet light. In reality, it hardly fogging due to self-heating during discharge.

In the semiconductor manufacturing apparatus of this example, the reaction chamber 12
The pressure inside the reaction chamber 12 is finely adjusted by the pressure adjuster 38 provided at the exhaust port 36 so that the pressure in the reaction chamber 12 becomes 1 to 10 atmospheres. A luminescent gas for emitting vacuum ultraviolet light and a reaction gas for causing a reaction are introduced into the reaction chamber 12 through the gas inflow ports 40, respectively. The flow rates of the luminescent gas and the reaction gas are adjusted to 0.1 to 500 sccm by a gas flow rate controller 42 provided at the gas inlet 40. It should be noted that the amount by which the reaction gas can be decomposed is determined by the irradiation amount of the vacuum ultraviolet light, but the concentration of the luminescent gas needs to be higher than the concentration of the reaction gas in order to generate the vacuum ultraviolet light. Therefore, for example, the gas flow rate adjuster 42 adjusts the flow rate of the luminescent gas to 100 to 500 sccm, and
It is preferable to adjust the flow rate of the reaction gas to 0.1 to 50 sccm.

As the above-mentioned luminescent gas, Xe, Kr, A
Inert gas such as r, Ne and He, or hydrogen (H)
A light element gas such as the above or a mixed gas thereof is used. As the above-mentioned reaction gas, for example, Ar-diluted TEOS, halogen gas, oxygen, or a mixed gas thereof is used depending on a desired reaction for film formation or cleaning.

Thus, both the luminescent gas and the reaction gas are introduced into the reaction chamber 12. Then, 10 to 1000 KHz is applied to the electrodes by the AC power source 24.
A voltage of 5 to 20 KV is applied at a frequency of 1 to generate discharge. Then, the luminescent gas is excited and vacuum ultraviolet light is generated. Further, the reaction gas is irradiated with vacuum ultraviolet light to induce a predetermined reaction for film formation or cleaning. in this way,
Since the light source 10 is provided in the reaction chamber 12, the generation of vacuum ultraviolet light and the reaction for film formation and cleaning can be performed together in the reaction chamber 12. Unlike the conventional case, since the light source and the reaction chamber are not partitioned by the window, there is no adverse effect such as deterioration or fogging of the window. Therefore, the processing speed such as film formation and cleaning is improved.

By the reaction induced in the reaction chamber 12, the substrate 30 on the stage 14 is subjected to predetermined processing such as film formation and cleaning. The stage 14 can freely control the temperature and vertical movement and rotation. Therefore, if the process performed on the substrate 30 is film formation, there is an effect that variation in film quality and film thickness is improved, and film formation speed is increased. In addition, if the processing performed on the substrate 30 is cleaning, the effects of improvement in cleaning variation and cleaning speed can be obtained. In the device of this example, the light source 10
Is provided in the reaction chamber 12, the distance between the light source 10 and the substrate 30 can be made as short as 1 mm to 50 mm by adjusting the height of the stage 14. Therefore, the light from the light source 10 does not spread and a sufficient irradiation intensity can be obtained. Due to the synergistic effect of such advantages, the high output of vacuum ultraviolet light, and the absence of window loss, the stage temperature can be changed from room temperature to several hundreds of degrees.
Despite the low temperature of about 0 ° C., the semiconductor manufacturing apparatus of this embodiment has a high processing speed for film formation and cleaning, and is extremely excellent in mass productivity as compared with the conventional apparatus.

The stage 14 may be arranged vertically above the light source 10. In general, foreign matter falls from the top to the bottom, and therefore, if the stage 14 is arranged on the upper side, it is possible to prevent the foreign matter from adhering to the substrate 30.

[Second Embodiment] FIG. 4 is a sectional view showing the structure of a semiconductor manufacturing apparatus according to the second embodiment. This semiconductor manufacturing apparatus includes a cavity 44 as a vacuum ultraviolet light generator (hereinafter referred to as a light source), a reaction chamber 46,
And a stage 48. In this device, high-density plasma discharge is generated in the cavity 44 to generate vacuum ultraviolet light. The cavity 44 communicates with the reaction chamber 46, and the vacuum ultraviolet light generated in the cavity 44 is generated by the reaction chamber 46.
It is radiated inside. The vacuum ultraviolet light induces a predetermined reaction in the reaction chamber 46. Further, a stage 48 as a support is provided inside the reaction chamber 46. A substrate 50 such as a silicon wafer is supported by the stage 48. The substrate 50 is processed using the above-mentioned reaction.

The cavity 44 described above is provided above the reaction chamber 46. The cavity 44 and the reaction chamber 46 communicate with each other where they are connected. Therefore, in this semiconductor manufacturing apparatus, the pressure of the light source (that is, the pressure in the cavity 44) and the reaction chamber 4
The pressure inside 6 is the same as the pressure in the propagation path of vacuum ultraviolet light from the light source to the reaction chamber 46.

In the semiconductor manufacturing apparatus of this example, the reaction chamber 46
The pressure in the reaction chamber 46, that is, the pressure in the cavity 44 is adjusted to 0.
01 to several hundred Torr (preferably 0.1 to 100T)
The pressure is finely adjusted so that the pressure becomes a pressure of (orr). Gas inlets 55 and 56 are formed in the cavity 44 and the reaction chamber 46, respectively. A luminescent gas for emitting vacuum ultraviolet light is introduced into the cavity 44 through a gas inlet 55. In the reaction chamber 46,
A reaction gas for causing a reaction is introduced through the gas inflow port 56. The flow rates of the luminescent gas and the reaction gas are 1 to several 100 sccm (preferably 1 to 100 sccm) by gas flow rate adjusters 58 and 60 provided at the gas inlets 55 and 56, respectively.
cm).

As described above, in order to generate the plasma in the cavity 44, the cavity 44 and the reaction chamber 4 are
It is necessary to make 6 a low pressure of 0.01 to several hundred Torr. In this case, in consideration of the exhaust capacity of a general vacuum pump, the flow rate at which the luminescent gas and the reaction gas can flow is the above-described value 1 to several hundreds sccm.

As the above-mentioned luminescent gas, Xe, Kr, A
Inert gas such as r, Ne and He, or hydrogen (H)
A light element gas such as the above or a mixed gas thereof is used. As the above-mentioned reaction gas, for example, Ar-diluted TEOS, halogen gas, oxygen, or a mixed gas thereof is used depending on a desired reaction for film formation or cleaning.

Next, the mechanism of generating vacuum ultraviolet light will be described. As described above, in the semiconductor manufacturing apparatus of this example, high-density plasma discharge is generated in the cavity 44 to generate vacuum ultraviolet light. Therefore, the cavity 44
A microwave is input into the cavity, and the microwave is resonated in the cavity 44. As a result, energy is injected into the luminescent gas introduced into the cavity 44. As a result, plasma 62 is formed in the cavity 44, and vacuum ultraviolet light is emitted.

Therefore, the partition wall of the cavity 44 is made of a metal material. For example, the partition material of the cavity 44 is preferably aluminum or tungsten. However, when plasma is generated, the ions of the luminescent gas hit the inner wall surface of the cavity 44 and sputter the partition wall material of the cavity 44. Therefore, it is desirable to use aluminum as the partition wall material, which has little influence on the semiconductor.

A microwave input port 64 is formed on the upper wall of the cavity 44. A vacuum separation window 66 made of quartz glass or the like is inserted into the microwave input port 64 in order to maintain the vacuum in the cavity 44. The microwave input to the microwave input port 64 passes through the vacuum separation window 66 and is introduced into the cavity 44. The input microwave has a frequency of 2.45 GHz and a power of 500 W, for example.

Similarly, on the upper wall of the cavity 44,
A microwave resonance adjusting knob 68 is attached.
The microwave resonance adjusting knob 68 is made of a metal material, and is connected to the wide metal piece provided in the cavity 44 and the metal piece, and protrudes to the outside through the hole in the upper wall of the cavity 44. It consists of a metal rod part. As a matter of course, a predetermined vacuum seal is applied to the hole portion through which the metal rod is inserted. Then, the position of the metal piece in the cavity 44 can be adjusted by moving the metal rod portion into and out of the hole. Since the resonance frequency of the cavity 44 changes according to the position of this metal piece, the frequency of the microwave input to the cavity 44 and the resonance frequency of the cavity 44 are made to match. Then, the microwaves resonate in the cavity 44, plasma is formed based on the luminescent gas introduced from the gas inlet 55, and as a result,
Vacuum ultraviolet light is generated.

A metal net 70 is provided at the boundary between the cavity 44 and the reaction chamber 46. The metal net 70 is electrically connected to the partition wall of the reaction chamber 46 and is at the ground level. A large number of irradiation holes 72 through which vacuum ultraviolet light passes are formed in the metal net 70. The vacuum ultraviolet light generated in the cavity 44 is introduced into the reaction chamber 46 through the irradiation hole 72. The metal net 70 also serves as a trap for charged particles generated in the cavity 44. Since the charged particles in the plasma have a short mean free path of 1 mm or less, the charged particles are trapped by the charged particle trap by the metal net 70. Therefore, the charged particles do not reach the stage 48 in the reaction chamber 46, and the substrate 50 does not suffer damage such as charge-up.

FIG. 5 is a graph showing the relationship between the degree of vacuum and the mean free path. The vacuum is plotted on the horizontal axis, 10 ^-7 Tor
The range from r to 10 ³ Torr is shown. The mean free path is taken on the vertical axis, and the range from 10 ⁻⁴ cm to 10 ⁵ cm is shown. In the figure, a black square mark shows electron data, a white square mark shows ionized He data, and a white circle mark shows ionized Xe data. As shown in FIG. 5, 0.1 to 1
In the pressure region of 00 Torr, the mean free path of each charged particle is almost 1 mm or less.

As described above, the charged particles do not enter the reaction chamber 46. However, this charged particle is
The inner wall surface of No. 4 is sputtered to form the substrate 50 on the stage 48.
May cause metal contamination. In that case, it is advisable to provide a glass plate 74 for shielding sputtered substances between the metal net 70 and the stage 48. The glass plate 74 has a thin thickness of about 1 mm so that transmission of vacuum ultraviolet light does not matter. Alternatively, instead of providing the glass plate 74,
The cavity 44 may be evacuated by itself.

According to the configuration described above, the vacuum ultraviolet light introduced into the reaction chamber 46 induces a predetermined reaction in the reaction chamber 46 based on the reaction gas introduced from the gas inlet 56. In the reaction chamber 46, the substrate 50 is supported by the stage 48 while facing the cavity 44. Due to the reaction induced in the reaction chamber 46, the substrate 50 on the stage 48 is subjected to predetermined processing such as film formation and cleaning.

Further, the stage 48 can freely control the temperature and the vertical movement and rotation. Therefore, if the process performed on the substrate 50 is film formation, variations in film quality and film thickness and film formation speed can be improved.
Further, if the processing performed on the substrate 50 is cleaning, it is possible to improve the cleaning variation and the cleaning speed.

As described above, according to the semiconductor manufacturing apparatus of this embodiment, since the light source and the reaction chamber are not partitioned by the window as in the conventional case, there is no adverse effect such as deterioration or fogging of the window. . Therefore, the processing speed such as film formation and cleaning based on the reaction performed in the reaction chamber 46 is improved.

Further, since the microwave cavity is adopted as the light source in the apparatus of this example, it is possible to generate high-output vacuum ultraviolet light under a low pressure.

Due to the synergistic effect of these advantages, the semiconductor manufacturing apparatus of this embodiment has a high processing speed for film formation and cleaning, even though the stage temperature is lower than room temperature by about several hundreds of degrees Celsius. It is extremely excellent in mass productivity as compared with conventional devices.

[Third Embodiment] FIG. 6 is a sectional view showing the structure of a semiconductor manufacturing apparatus according to the third embodiment. This semiconductor manufacturing apparatus includes a cavity 76 as a vacuum ultraviolet light generator (hereinafter referred to as a light source), a reaction chamber 46,
And a stage 48. In this device, a high-density plasma discharge is generated in the cavity 76 to generate vacuum ultraviolet light. The cavity 76 communicates with the reaction chamber 46, and the vacuum ultraviolet light generated in the cavity 76 is generated by the reaction chamber 46.
It is radiated inside. The vacuum ultraviolet light induces a predetermined reaction in the reaction chamber 46. Further, a stage 48 as a support is provided inside the reaction chamber 46. A substrate 50 such as a silicon wafer is supported by the stage 48. The substrate 50 is processed using the above-mentioned reaction.

When the semiconductor manufacturing apparatus of the third embodiment and the semiconductor manufacturing apparatus of the second embodiment are compared,
The only difference between the two is the plasma generation mechanism, and the reaction chamber and stage have the same configuration. Hereinafter, the plasma generation mechanism will be described focusing on the configuration around the cavity 76.

First, the above-mentioned cavity 76 is formed in the reaction chamber 4
It is provided on the upper side of 6. The cavity 76 and the reaction chamber 46 are in communication with each other where they are connected. Therefore, in this semiconductor manufacturing device,
The pressure of the light source (that is, the pressure inside the cavity 76), the pressure inside the reaction chamber 46, and the pressure in the propagation path of vacuum ultraviolet light from the light source to the reaction chamber 46 are the same.

As described in the second embodiment, the pressure in the reaction chamber 46, that is, the pressure in the cavity 76 is
By the pressure regulator 54 provided at the exhaust port 52 of the reaction chamber 46, 0.01 to several 100 Torr (preferably 0.1
Finely adjusted so that the pressure is up to 100 Torr).
Gas inlets 78 and 56 are formed in the cavity 76 and the reaction chamber 46, respectively. Cavity 76
A luminescent gas for emitting vacuum ultraviolet light is introduced through the gas inlet 78. The gas inlet 78 is formed on the upper wall of the cavity 76. Further, a reaction gas for causing a reaction is introduced into the reaction chamber 46 through a gas inlet 56. The flow rates of the luminescent gas and the reaction gas are 1 to several 100 sccm by gas flow rate regulators 80 and 60 provided at the gas inlets 78 and 56, respectively.
The flow rate is adjusted (preferably 1 to 100 sccm).

As the above-mentioned luminescent gas, Xe, Kr, A
Inert gas such as r, Ne and He, or hydrogen (H)
A light element gas such as the above or a mixed gas thereof is used. As the above-mentioned reaction gas, for example, Ar-diluted TEOS, halogen gas, oxygen, or a mixed gas thereof is used depending on a desired reaction for film formation or cleaning.

Next, the mechanism of generating vacuum ultraviolet light will be described. As described above, in the semiconductor manufacturing apparatus of this example, high-density plasma discharge is generated in the cavity 76 to generate vacuum ultraviolet light. In this example, by generating a magnetic field in the cavity 76, the cavity 76
Energy is injected into the luminous gas introduced therein. As a result, plasma 62 is formed in the cavity 76, and vacuum ultraviolet light is emitted.

For this reason, the coils 82a, 82b and 82c are wound around the partition wall of the cavity 76. These coils 82a, 82b and 82c are wound around an axis in a direction perpendicular to the surface of the stage 48. Also,
These coils 82a, 82b and 82c are provided in this order from the upper side of the cavity 76 to the reaction chamber 46. The coil 82a provided above the cavity 76 and the coil 82c provided below the cavity 76 (on the side of the reaction chamber 46) are used as an antenna coil for generating a helicon wave. These coils 8
2a and 82c have 1 at a frequency of 13.56 MHz
High-frequency power of 000 W is supplied.
The luminous field is ionized by the magnetic field generated by the coils 82a and 82c to generate plasma. The coil 82b located between the coils 82a and 82c is a coil for generating a DC magnetic field in the axial direction. This direct-current magnetic field can move the plasma of the ionized luminescent gas to the stage 48 side and improve the in-plane distribution. The direction of the DC magnetic field is controlled to the stage 48 side or the gas inlet 78 side according to the optimization.

The partition wall of the cavity 76 is made of an insulating material. For example, the partition material of the cavity 76 is preferably quartz glass or alumina.

Further, as described in the second embodiment, the metal net 70 is provided at the boundary between the cavity 76 and the reaction chamber 46.
Should be provided. The vacuum ultraviolet light generated in the cavity 76 passes through the irradiation hole 72 of the metal net 70 and the reaction chamber 46.
Will be introduced to. On the other hand, as described with reference to FIG.
Since the metal net 70 serves as a trap for the charged particles generated in the cavity 76, the charged particles do not reach the stage 48 in the reaction chamber 46.

Further, as described in the second embodiment, the glass plate 74 for shielding the sputtered substance is provided between the metal net 70 and the stage 48, or the cavity 76 is evacuated by itself. good.

As described above, in the semiconductor manufacturing apparatus of this example, a luminous gas is introduced into the cavity 76 and the coils 82a, 82b and 82c are operated to form plasma in the cavity 76 to generate vacuum ultraviolet light. Generate. The vacuum ultraviolet light introduced into the reaction chamber 46 induces a predetermined reaction in the reaction chamber 46 based on the reaction gas introduced from the gas inflow port 56. In the reaction chamber 46, the substrate 50 is supported by the stage 48 while facing the cavity 76. Due to the reaction induced in the reaction chamber 46, the substrate 50 on the stage 48 is subjected to predetermined processing such as film formation and cleaning.

Further, the stage 48 can freely control the temperature and the movement and rotation in the vertical direction. Therefore, if the process performed on the substrate 50 is film formation, variations in film quality and film thickness and film formation speed can be improved.
Further, if the processing performed on the substrate 50 is cleaning, it is possible to improve the cleaning variation and the cleaning speed.

According to the semiconductor manufacturing apparatus of this embodiment, since the light source and the reaction chamber are not partitioned by the window as in the conventional case, there is no adverse effect such as deterioration or fogging of the window. Therefore, the processing speed such as film formation and cleaning based on the reaction performed in the reaction chamber 46 is improved.

Further, in the apparatus of this example, since high-density plasma discharge is used for the light source, it is possible to generate high-output vacuum ultraviolet light under low pressure.

Due to the synergistic effect of these advantages, the semiconductor manufacturing apparatus of this embodiment has a high processing speed for film formation and cleaning, even though the stage temperature is lower than room temperature by about several hundreds of degrees Celsius. It is extremely excellent in mass productivity as compared with conventional devices.

The respective devices of the first, second and third embodiments described above are made of SiO ₂ depending on the kind of reaction gas.
It can be used for forming a film, a low dielectric film, a high dielectric film and a metal film, and for cleaning an organic film and an inorganic film. It can also be used for shallow etching of the substrate surface. Furthermore, it can also be used to remove substrate damage received at the manufacturing stage (pushing charged particles in during etching, etc.).

[0100] For example, the case of forming a SiO ₂ film, Ar or diluted N ₂ dilution of TEOS as a reaction gas [Si (O
C ₂ H ₅ ) ₄ , Si (OCH ₃ ) _{4 and the} like] are used. When forming a SiF-based film that is a low dielectric film,
As the reaction gas, Ar diluted TEOS to which a slight amount of a CFC gas such as SiF ₄ , F ₂ or CF ₄ is added is used. When forming a SiON-based film that is a high-dielectric film, NH ₃ (ammonia) or (CH ₃ ) ₃ N (trimethylamine) is used as reaction gas in Ar diluted TEOS.
Use a small amount of added. When forming a titanium oxide film which is a high dielectric film, O ₂ dilution [Ti (C ₂ H ₅ ) ₂ ] ₂ is used as a reaction gas. When forming a Mo film, which is a metal film, Ar (N) or N ₂ diluted Mo (CO) ₆ (hexacarbonylmolybdenum) is used as a reaction gas. When a W film, which is a metal film, is formed, the reaction gas is Ar diluted or N ₂ diluted W (CO).
₆ (Hexacarbonyl tungsten) is used. Also,
When forming an Al film as a metal film, (CH ₃ ) ₃ Al (trimethylaluminum) diluted with Ar or N ₂ is used as a reaction gas. When forming a Zn film which is a metal film, Ar diluted or N ₂ diluted (CH ₃ ) ₂ Zn (dimethyl zinc) is used as a reaction gas.

When cleaning the organic film, O ₂ is used as a reaction gas. When cleaning the inorganic film,
It is advisable to use a halogen gas such as chlorine or fluorine as a reaction gas to sublimate chloride and etch the silicon substrate.

In order to remove the damage on the silicon substrate received in the manufacturing stage, it is preferable to remove the damaged layer by etching the substrate surface by about 200 Å using a halogen gas such as chlorine or fluorine as a reaction gas.

[0103]

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[0115]

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[0119]

[0120]

[0121]

[0122]

[0123]

[0124]

[0125]

According to the semiconductor manufacturing apparatus of the invention of this application, the vacuum ultraviolet light generating section, the inside of the reaction chamber, and the propagation path of the vacuum ultraviolet light from the vacuum ultraviolet light generating section to the reaction chamber are the same. Since pressure is applied, a partition such as a window that causes a difference in pressure is not provided between them. Therefore, the vacuum ultraviolet light generator and the reaction chamber are not separated by the window as in the conventional case. Therefore, the vacuum ultraviolet light from the vacuum ultraviolet light generator is introduced into the reaction chamber through the above-described propagation path without suffering from the window loss which has been a problem in the past.
Therefore, the amount of light is increased as compared with the related art, and as a result, the processing speed is improved.

[0126]

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a semiconductor manufacturing apparatus according to a first embodiment.

FIG. 2 is a diagram showing a structure of an electrode.

FIG. 3 is a diagram showing a modification of the semiconductor manufacturing apparatus.

FIG. 4 is a diagram showing a configuration of a semiconductor manufacturing apparatus according to a second embodiment.

FIG. 5 is a diagram showing the relationship between the degree of vacuum and the mean free path.

FIG. 6 is a diagram showing a configuration of a semiconductor manufacturing apparatus according to a third embodiment.

[Explanation of symbols]

10: Vacuum ultraviolet light generator 12,46: Reaction chamber 14,48: Stage 16: Pipe 16a: Main pipe 16b: Secondary pipe 18: Conductor film 20: Waterway 22: Insulation part 24: AC power supply 26: High dielectric film 28: Low dielectric film 30, 50: substrate 32: Dielectric film 34: Vacuum ultraviolet light 36, 52: exhaust port 38, 54: Pressure regulator 40, 55, 56, 78: Gas inlet 42, 58, 60, 80: Gas flow rate adjuster 44, 76: Cavity 62: Plasma 64: Microwave input port 66: Vacuum separation window 68: Microwave resonance adjustment knob 70: Metal mesh 72: Irradiation hole 74: Glass plate 82a, 82b, 82c: coil

─────────────────────────────────────────────────── ─── Continuation of the front page (73) Patent holder 599165717 Shoichi Kubodera 1-1 Kibadai Nishi, Gakuen, Miyazaki City, Miyazaki Prefecture Faculty of Engineering, Miyazaki University (73) Patent holder 390008855 Miyazaki Oki Electric Co., Ltd. Kiyotake-cho, Miyazaki-gun, Miyazaki Prefecture Daiji Kihara 727 (73) Patent holder 592075884 Kiyomoto Tetsuko Co., Ltd. 6163, Dotoro-cho, Nobeoka-shi, Miyazaki Prefecture (73) Patent holder 598075217 Hinode Oxygen Co., Ltd. 86 No. 1, Sakurazono-cho, Nobeoka-shi, Miyazaki (73) Patent holder 598049746 Miyazaki Daishin Canon Co., Ltd. 4308-1 Takagi, Kijo-cho, Koyu-gun, Miyazaki prefecture (73) Patent holder 000000295 1-7-12 Toranomon Toranomon, Minato-ku, Tokyo (72) Inventor Wataru Sasaki Miyazaki City Miyazaki City Gakudaidai 1-chome 1-chome, Miyazaki University Area Collaborative Research Center (72) Inventor Hiroshi Kurosawa Okazaki City, Aichi Prefecture 38, Saigochu, Oji-cho, Okazaki National Institute for Collaborative Research, Institute of Molecular Science (72) Inventor, Shoichi Kubotera 1-1, Kibanadai Nishi, Gakuen, Miyazaki City, Miyazaki Prefecture Miyazaki University Faculty of Engineering (72) Inventor, Riichi Motoyama Miyazaki, Miyazaki Prefecture Gunma Kiyotake-cho 727 Kihara, Miyazaki Oki Electric Co., Ltd. (72) Inventor Tetsuro Yokoyama Miyazaki-prefecture Kiyotake-cho Miyazaki 727 Kihara, Miyazaki Oki Electric Co., Ltd. (72) Inventor Kiyohiko Torikawa Miyazaki-ki Kiyotake-cho 727, Kihara, Miyazaki Oki Electric Co., Ltd. (72) Inventor, Junichi Miyano, Kiyotake-cho, Miyazaki-gun, Miyazaki 727, Kihara, Miyazaki Oki Electric Co., Ltd. (56) Reference JP-A-63-128723 (JP, A) Kai 63-229711 (JP, A) JP-A-3-211283 (JP, A) JP-63-222424 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) C23C 16 / 48 H01L 21/205 H01L 21/31

Claims (8)

(57) [Claims] 1. A vacuum ultraviolet light generating part, which is a region for generating vacuum ultraviolet light by injecting energy into a luminescent gas, and a reaction chamber in which a predetermined reaction is induced by the vacuum ultraviolet light from the vacuum ultraviolet light generating part. And a support base provided in the reaction chamber for supporting a substrate to be processed using the reaction, wherein the vacuum ultraviolet light defined inside the reaction chamber is provided. A semiconductor characterized in that an electrode covered with a dielectric film is provided in the generation part, and the electrode is provided with a conductor film on the surface of an insulating tubular body that also serves as a channel for cooling water. Manufacturing equipment. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the tubular body is extended so that the electrodes have a comb shape. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the tubular body is extended so that the electrode has a spiral shape. 4. A vacuum ultraviolet light generating part, which is a region for generating vacuum ultraviolet light by injecting energy into a luminescent gas, and a reaction chamber in which a predetermined reaction is induced by the vacuum ultraviolet light from the vacuum ultraviolet light generating part. And a support base provided in the reaction chamber for supporting a substrate to be processed using the reaction, wherein the vacuum ultraviolet light defined inside the reaction chamber is provided. An electrode covered with two types of dielectric films is provided in the generation part, and the dielectric constant of one of the dielectric films provided on the side facing the support with respect to the electrodes is set to the dielectric constant of the other of the dielectric films. A semiconductor manufacturing apparatus characterized by being made larger than a dielectric constant. 5. The semiconductor manufacturing apparatus according to claim 4, wherein one of the dielectric films is a silicon nitride film and the other of the dielectric films is quartz glass. 6. A vacuum ultraviolet light generating part, which is a region for generating vacuum ultraviolet light by injecting energy into a luminescent gas, and a reaction chamber in which a predetermined reaction is induced by the vacuum ultraviolet light from the vacuum ultraviolet light generating part. And a support base provided in the reaction chamber for supporting a substrate to be processed using the reaction, wherein the vacuum ultraviolet light defined inside the reaction chamber is provided. An electrode covered with a dielectric film is provided in the generation part, and a film thickness d2 of a portion of the dielectric film provided on a side of the electrode facing the support base is opposite to that of the support base of the electrode. The semiconductor manufacturing apparatus is characterized in that it is made smaller than the film thickness d1 of the portion of the dielectric film provided on the side. 7. The semiconductor manufacturing apparatus according to claim 6, wherein when the dielectric film is quartz glass, d1 ≧ 2 × d2.
The semiconductor manufacturing apparatus is characterized by satisfying the following relationship. 8. A vacuum ultraviolet light generating part, which is a region for generating vacuum ultraviolet light by injecting energy into a luminescent gas, and a reaction chamber in which a predetermined reaction is induced by the vacuum ultraviolet light from the vacuum ultraviolet light generating part. And a support base provided in the reaction chamber for supporting a substrate to be processed using the reaction, wherein the vacuum ultraviolet light generation unit is a cavity for plasma discharge. The cavity is communicated with the reaction chamber, and a glass plate for shielding sputtered matter is provided between the support and the metal net provided at the boundary between the cavity and the reaction chamber. Semiconductor manufacturing equipment characterized by the fact that