JP3360052B2 - Developing device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing device having a function of removing a developing solution from the back surface of a wafer.

[0002]

2. Description of the Related Art A general developing device is shown in FIG.
The wafer 2 is vacuum-sucked on the spin chuck 1, and the developer 3 is dropped on the rotation center O of the wafer 2 while the wafer 2 is rotated, and the developer 3 is diffused over the entire surface of the wafer 2 by centrifugal force. The photoresist on the wafer 2 is developed with a developing solution 3.

When the developing solution 3 is diffused over the entire surface of the wafer 2 by centrifugal force, the developing solution 3
When the developer 3 reaches the peripheral edge of the wafer 2, the excess developer 3 travels along the peripheral edge of the wafer 2 and wraps around to the back side of the wafer 2 so that the developer 3 spreads toward the peripheral edge. Applied to

[0004] The film formed by the developing solution 3 has a bad influence on the processing in the subsequent steps, and it is necessary to ensure that no developing solution remains on the back surface of the wafer 2 when the developing process is completed. .

Therefore, in the conventional developing device, as shown in FIG. 3, an endless knife edge ring 4 is provided upright on a base 4a located directly below a wafer 2. The knife edge ring 4 is provided at a position receding inward from the peripheral edge of the wafer 2, and is configured to scrape off the developer 3 that has flowed to the back surface of the wafer 2 by the knife edge ring 4.

[0006]

In the conventional developing device shown in FIG. 3, the knife edge ring 4 is attached to the wafer 2.
It is necessary to provide so as not to hinder the rotation of
A gap S is formed between the knife edge ring 4 and the back surface of the wafer 2.

Therefore, in the conventional developing device shown in FIG.
Depending on the state and properties of the film formed by the developing solution 3 formed on the back surface of the wafer 2, the developing solution 3 wrapped around the back surface of the wafer 2 may cause the gap S between the knife edge ring 4 and the wafer 2.
Through the wafer 2 as shown by the dotted line
There is a problem that it is applied to the back surface of the substrate.

The use of the rinsing nozzle 5 to wash and remove the developing solution 3 that has flowed into the back surface of the wafer 2 is also used. However, when the developing solution 3 wraps around from the installation position of the rinsing nozzle 5, In many cases, it is impossible to reliably remove the developing solution 3 with the cleaning solution from the rinsing nozzle 5, and when the wafer 2 in this state is transferred to the next step, the developing solution remaining on the back surface of the wafer 2 is removed. 3 adheres and causes contamination.

An object of the present invention is to provide a developing device having a function of removing the developing solution 3 from the entire back surface of the wafer 2.

[0010]

In order to achieve the above object, a developing apparatus according to the present invention diffuses a developing solution by centrifugal force in a state where a wafer is rotated, and spreads the developing solution over the entire surface of the wafer.
In the developing apparatus for developing the photoresist on the wafer in a developing solution, a knife edge ring scraped off the developing solution on the back surface side peripheral edge of the wafer is provided, from the rotation center side of the wafer at the back surface side of the wafer peripheral edge of the wafer diameter in a direction to eject gas, inside nearest the knife edge ring
And exhaust gas to form a gas stream at, together with the developer through the gap <br/> knife edge ring and the wafer by the gas flow is prevented from entering the inner, gas Naifue
It does not blow out to the outside of the judge ring .

Further, the gas discharge port of the gas discharge nozzle disposed in a ring rotation center side of the rear surface side of the wafer, before
The gas exhaust nozzle must be located immediately inside the knife edge ring.
A gas exhaust port is installed in a ring shape, and the gas discharged from the gas discharge port is sucked and exhausted by the gas exhaust port , so that the gas is discharged from the center of rotation of the wafer on the back side of the wafer in the radial direction from the rotation center of the wafer to the peripheral edge of the wafer. the directed gas flow is formed and the gas
Flow through the gap between the knife edge ring and the wafer to develop
This prevents liquid from entering the inside and gas
It does not blow out outside the edge ring .

Further, by adjusting the discharge amount of the gas discharge nozzle and the discharge amount from the gas discharge nozzle,
Creates a uniform gas flow at any velocity, and
The developer flows inside through the gap between the edge ring and the wafer
With preventing from entering the one in which gas outwardly from the knife edge ring is controlled not ejected. Further, the gas discharge port is provided on the back side of the wafer.
It is arranged in a ring shape on the rotation center side, and the gas exhaust port is
It is installed in the shape of a ring immediately inside the knife edge ring.
It is what has been.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 is a configuration diagram showing a developing device according to Embodiment 1 of the present invention.

In the developing apparatus according to the first embodiment of the present invention shown in FIG. 1, a wafer 2 is vacuum-sucked on a spin chuck 1 and a developing solution 3 is applied to the rotation center O of the wafer 2 while the wafer 2 is rotated. The developer 3 is dropped and diffused over the entire surface of the wafer 2 by centrifugal force, and the photoresist on the wafer 2 is developed with the developer 3.

Further, a substrate 4 located immediately below the wafer 2
An endless knife edge ring 4 is provided at a. The knife edge ring 4 is provided at a position retracted inward from the peripheral edge of the wafer 2, and is configured to scrape off the developer 3 that has flowed to the back surface of the wafer 2 by the knife edge ring 4.

Further, the first embodiment of the present invention
A gas is discharged from the rotation center O of the wafer 2 toward the radial direction of the peripheral edge of the wafer 2 on the back side of the wafer 2, and the developing solution 3 flows inward through the gap S between the knife edge ring 4 and the wafer 2 by the gas flow. I try to prevent them from getting in.

More specifically, a ring-shaped discharge port 6a opened along the entire circumference of the spin chuck 1 is opened in a gas discharge nozzle 6 arranged around the spin chuck 1 for vacuum-sucking the wafer 2; A ring-shaped discharge port 6a is installed on the back side of the wafer 2 from the rotation center O of the wafer 2 toward the radial direction on the peripheral side of the wafer 2, and the gas discharge nozzle 6 is connected to a gas supply source (not shown) via a damper 8. Connected.

Further, a gas exhaust nozzle 7 is provided along the inside of the endless knife edge ring 4 provided on the peripheral side of the wafer 2, and the gas exhaust nozzle 7 is opened along the entire circumference of the endless knife edge ring 4. The ring-shaped exhaust port 7a is opened, and the ring-shaped exhaust port 7a is installed on the back side of the wafer 2 from the peripheral edge of the wafer 2 toward the radial direction of the rotation center O side of the wafer 2, and the back side of the wafer 2 The gas discharged from the discharge port 6a of the discharge nozzle 6 from the rotation center O of the wafer 2 to the radial direction on the peripheral edge side of the wafer 2 is supplied to the gas exhaust nozzle 7 near the gap S between the knife edge ring 4 and the wafer 2. By sucking and exhausting air from the exhaust port 7a, the gas flow is prevented from entering the developer 3 through the gap S between the knife edge ring 4 and the wafer 2.

The gas exhaust nozzle 7 is connected via a damper 8 to an exhaust pump (not shown).

Further, in the first embodiment of the present invention, fine particles of the developing solution 3 which enter the developing solution 3 through the gap S between the knife edge ring 4 and the wafer 2 are opposed to the gas flow and the fine particles of the developing solution 3 In order to remove the substances adhering to the peripheral edge of the back surface, the inside of the knife edge ring 4 (wafer 2)
The rinsing nozzle 5 is installed at a position retracted to the rotation center O side of the wafer 2, and the cleaning liquid is discharged from the rinsing nozzle 5 over a predetermined range on the peripheral side of the back surface of the wafer 2 to remove the cleaning liquid.

The cleaning liquid discharged from the rinsing nozzle 5
The developing solution 3 to be attached to the back surface of the wafer 2 flows down, and the developing solution 3 containing the developing solution 3 is collected from a collecting port (not shown) and discarded.

In the first embodiment of the present invention shown in FIG.
While the wafer 2 is rotated, the developer 3 is dropped on the rotation center O of the wafer 2, and the developer 3 is diffused over the entire surface of the wafer 2 by centrifugal force, and the photoresist on the wafer 2 is developed with the developer 3. To process.

When the developing solution 3 is diffused over the entire surface of the wafer 2 by centrifugal force, the developing solution 3
When the developer 3 reaches the peripheral edge of the wafer 2, the excess developer 3 tries to move along the peripheral edge of the wafer 2 and flow to the back side of the wafer 2 because the developer 3 reaches the peripheral edge of the wafer 2. The developer 3 is scraped off the wafer 2 along the knife edge ring 4 by surface tension.

However, there is a slight gap S between the knife edge ring 4 and the wafer 2, and there is a possibility that the developer 3 flows further inside through the gap S.

At this time, the gas discharged from the ring-shaped discharge port 6a of the gas discharge nozzle 6 inside the rinse nozzle 5 is displaced in the radial direction from the rotation center O of the wafer 2 to the peripheral edge of the wafer 2 on the back side of the wafer 2. The developer 3 is pushed toward the discharge port 7 a of the gas exhaust nozzle 7 immediately inside the knife edge ring 4 by the gas flow.
No further inside .

In this case, the amount of gas discharged from the gas discharge nozzle 6 and the amount of gas discharged from the gas exhaust nozzle 7 are adjusted by the damper 8, so that gas does not flow outward from the knife edge ring 4.

At the time of cleaning after the development is completed, a rinsing liquid (cleaning liquid) is discharged from the rinsing nozzle 5 toward the back surface of the wafer 2, so that the wafer 2 is positioned on the peripheral side of the back surface of the wafer 2, especially outside the knife edge ring 4. All the developer 3 attached to the peripheral edge of the back surface of the wafer 2 is washed away.

As described above, according to the first embodiment of the present invention, the gas is discharged from the rotation center O of the wafer 2 toward the radial direction of the peripheral edge of the wafer 2 on the back surface of the wafer 2,
Since the gas flow prevents the developer 3 from entering the inside through the gap S between the knife edge ring 4 and the wafer 2, the developer 3 is prevented from adhering to the back surface of the wafer 2. Can be.

Further, at the time of cleaning after the development is completed, a rinsing liquid (cleaning liquid) is directed from the rinse nozzle 5 toward the back surface of the wafer 2.
The developer 3 adhering to the peripheral edge of the back surface of the wafer 2 can be completely washed away by using the operation of discharging the developer.

Further, even if a gas is supplied during the developing process, the gas does not blow out from the knife edge ring 4, so that the air flow on the surface side of the wafer 2 is not disturbed, the temperature distribution is stabilized, and the developing process is adversely affected. Absent.

(Embodiment 2) FIG. 2 is a configuration diagram showing a developing device according to Embodiment 2 of the present invention.

Although the gas discharge nozzle 6 and the gas exhaust nozzle 7 are provided with the dampers 8 in the first embodiment of the present invention shown in FIG. 1, the second embodiment of the present invention shown in FIG. 9 is provided to adjust the gas discharge amount and the gas discharge amount.

In the second embodiment of the present invention shown in FIG. 2, a mass flow controller 9 is provided in place of the damper 8 to adjust the amount of gas discharged and the amount of gas discharged. The gas discharge amount and the gas exhaust amount can be arbitrarily controlled in a constantly stable state.

As a result, the gas flow rate can be controlled in accordance with the amount of the developing solution 3 which changes depending on the state of the back surface of the wafer 2, and the developing solution can be reliably stopped at the knife edge ring 4. There is.

[0036]

As described above, according to the present invention, a gas is discharged from the center of rotation of the wafer to the radial direction of the peripheral edge of the wafer on the back side of the wafer, and the gas flow causes the knife edge ring to move. The developer can be prevented from entering the inside through the gap between the wafers.

[Brief description of the drawings]

FIG. 1 is a configuration diagram illustrating a developing device according to a first embodiment of the present invention.

FIG. 2 is a configuration diagram illustrating a developing device according to a second embodiment of the present invention.

FIG. 3 is a configuration diagram illustrating a developing device according to a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Spin chuck 2 Wafer 3 Developing solution 4 Knife edge ring 5 Rinse nozzle 6 Gas discharge nozzle 7 Gas exhaust nozzle 8 Damper 9 Mass flow controller

Continuation of front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/027 G03F 7/30

Claims (4)

(57) [Claims] 1. A diffuse the developer on the entire surface of the wafer by centrifugal force while rotating the wafer in a developing apparatus for developing the photoresist on the wafer in a developing solution, the developing solution on the back surface side peripheral edge of the wafer A knife edge ring is provided to discharge gas from the center of rotation of the wafer on the back side of the wafer toward the radial direction of the peripheral edge of the wafer, and discharge the gas immediately inside the knife edge ring.
Te to form a gas stream outside with, gas from the knife edge ring developer through the gap of the knife edge ring and the wafer by the gas flow is prevented from entering the inside
A developing device that does not blow out to the side . 2. A gas discharge port of a gas discharge nozzle is arranged at a rotation center side on a back surface side of the wafer, and the knife edge is provided.
A gas exhaust port of a gas exhaust nozzle is installed immediately inside the ring, and the gas discharged from the gas discharge port is exhausted by the gas exhaust.
By suction and exhaust at the port , a gas flow is formed on the back side of the wafer from the center of rotation of the wafer to the radial direction of the peripheral edge of the wafer , and the knife edge ring and the wedge are formed by the gas flow.
Prevents developer from entering inside through gaps in chamber
The gas to the outside of the knife edge ring.
The developing device according to claim 1, wherein the developing device does not project light . 3. An arbitrary amount by adjusting a discharge amount of the gas discharge nozzle and a discharge amount from the gas discharge nozzle.
A uniform gas flow with a constant velocity
The developer enters the inside through the gap between the wafer ring and the wafer.
3. The developing device according to claim 2 , wherein the developing device is controlled so as to prevent the gas from being ejected outward from the knife edge ring. (4) The gas discharge port is located on the back side of the wafer.
The gas exhaust port is disposed in a ring shape on the side of the rotation center.
Is installed in a ring shape immediately inside the knife edge ring.
3. The developing device according to claim 2, wherein the developing device is provided.
Place.