JP3349416B2 - Power semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an improvement in connection between a plurality of power semiconductor chips in a power semiconductor device.

[0002]

2. Description of the Related Art A prior art of this type will be described with reference to FIGS. This power semiconductor device comprises a metal base 1 and
An insulating layer 2 soldered to the metal base 1, input / output terminals 3 and 44 soldered to the insulating layer 2, and a first power semiconductor chip 7 soldered to the input / output terminals 3 and 44
And the second power semiconductor chip 8 and the power semiconductor chip 7
And a metal bridge 46 connecting the first and the second metal bridge 8.

The input / output terminal 44 has a U-shaped portion that is positioned horizontally with respect to the metal base and soldered on the insulating layer 2, and has a portion whose tip rises vertically with respect to the metal base 1. are doing. The second power semiconductor chip 8 is soldered to the other surface of the input / output terminal 44 which is located horizontally, and the end of the portion of the input / output terminal 44 which rises vertically to the metal base 1 has a narrow terminal width. I have. An input / output terminal 45 is soldered on the second power semiconductor chip 8, and the first power semiconductor chip 7 is connected to the input / output terminal 3.
Soldered.

[0004] A metal bridge 46 is connected between the first power semiconductor chip 7 and the second power semiconductor chip 8. The second power semiconductor chip 8 of the metal bridge 46
A hole 51 is provided on the side of the metal bridge 4 and the output terminal 44 has a vertically rising terminal 52 having a narrow terminal width.
6 and is fixed by soldering. The side of the metal bridge 46 opposite to the side where the holes 51 are provided is soldered and fixed to the power semiconductor chip 7.

[0005]

However, soldering for connecting the input / output terminal 44 and the metal bridge 46 requires
Only the contact area of the thickness of the metal bridge 46 and the input / output terminal 44 can be obtained, and the electric resistance between the power semiconductor chip 7 and the power semiconductor chip 8 increases. further,
The soldering between the input / output terminal 44 and the metal bridge 46 has a problem that the number of assembling steps is increased because the connection point is floating in the air and must be manually soldered.

[0006]

According to a first aspect of the present invention, there is provided a power semiconductor device, comprising: a metal base; an insulating layer soldered on the metal base; a first input / output terminal provided on the insulating layer; A second input / output terminal having a U-shape and positioned horizontally with respect to the metal base is soldered on the insulating layer; and a first and a second input / output terminal mounted and soldered on the two input / output terminals, respectively. In a power semiconductor device comprising a second power semiconductor chip and a metal bridge for electrically connecting the two power semiconductor chips, the second input / output terminal rises perpendicularly to the metal base, The tip is a terminal having a first projection that fits into the metal bridge, and the metal bridge has a first fitting hole on the second input / output terminal side that fits into the projection, and is perpendicular to the fitting hole. Below A metal bridge, in which a metal bridge down perpendicular to the second terminal and said metal base which rises perpendicularly to the metal base is disposed in parallel with a slight spacing. That is, the electric resistance between the terminals is reduced by bending one of the terminals to form a portion where the terminals are parallel to each other.

[0007]

According to a second aspect of the present invention, there is provided a power semiconductor device comprising: a metal base; an insulating layer soldered on the metal base; a first input / output terminal provided on the insulating layer; A second input / output terminal having a U-shape and positioned horizontally with respect to the metal base is soldered on the insulating layer; and a first and a second input / output terminal mounted and soldered on the two input / output terminals, respectively. In a power semiconductor device comprising a second power semiconductor chip and a metal bridge for electrically connecting the two power semiconductor chips, the second input / output terminal rises perpendicularly to the metal base, Having a second fitting hole for fitting to the metal bridge before rising;
And the tip is a terminal having a first projection that fits into the metal bridge, and the metal bridge has a first fitting hole on a second input / output terminal side that fits into the first projection, and A metal bridge having a second protrusion which is vertically lowered from the first fitting hole and whose tip is fitted to the second fitting hole, and which rises perpendicularly to the metal base and the second terminal; Metal bridges that run perpendicular to the base are arranged in parallel with a slight spacing. That is, the first terminal and the second terminal
The contact area of the connection portion between the terminals is increased.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the first invention will be described with reference to FIGS. The power semiconductor device shown in FIG. 1 includes a metal base 1, insulating layers 2 and 2a soldered on the metal base, L-shaped input / output terminals 3 provided on the insulating layers 2 and 2a, and a U-shape. An input / output terminal 4 having a portion positioned horizontally with respect to the metal base 1 is soldered on the insulating layer 2 and a power semiconductor chip 7 mounted and soldered on the input / output terminals 3 and 4, respectively. , 8 and a metal bridge 6 for electrically connecting between the power semiconductor chips 7 and 8
And an input / output terminal 5 provided on the power semiconductor chip 8.
Is provided. FIG. 2 is an enlarged view of a soldering portion between the input / output terminal 4 and the metal bridge 6 surrounded by a dotted line in FIG.
Shown in

As shown in FIG. 2, the input / output terminal 4 rises perpendicularly to the metal base 1 at the soldering point, and the tip of the input / output terminal 4 has a projection 22 for fitting with the metal bridge 6. . One metal bridge 6 has a protrusion 2
It has a fitting hole 21 that engages with the second. The tip of this metal bridge 6 is bent from the fitting hole and vertically lowered. Therefore, the rising portion of the input / output terminal 4 and the portion vertically descending from the metal bridge 6 are arranged in parallel with a small interval of 1 mm or less, and the projection 22 of the input / output terminal 4 is fitted into the fitting hole 21 of the metal bridge 6. . The fitting hole 21 between the projection 22 of the fitted input / output terminal 4 and the metal bridge
And fix it with solder. At the time of this soldering, the solder flows into the portion where the input / output terminal 4 and the metal bridge 6 overlap in parallel by the capillary effect, and the connection between the input / output terminal 4 and the metal bridge 6 is made.

An embodiment of the second invention will be described with reference to FIG. 3 and FIG. 4 showing an enlarged view of a portion surrounded by a broken line in FIG. The power semiconductor device of FIG.
It comprises insulating layers 2, 2a provided on a metal base, input / output terminals 3, 34 provided on the insulating layers 2, 2a, power semiconductor chips 7, 8, and a metal bridge 36. The difference from the power semiconductor device of FIG. 1 is that the portion vertically descending from the metal bridge 6 of FIG. 1 is elongated as shown in FIGS. 3 and 4, and the tip forms a projection 35. Further, the portion of the input / output terminal 4 located horizontally with respect to the metal base 1 in FIG. 1 is that a fitting hole 33 that engages with the projection 35 is provided as shown in FIG. Therefore, the fitting between the projection 32 and the fitting hole 31 and the fitting between the projection 35 and the fitting hole 33 are performed.
And two points. And the input / output terminal 3
4 and the falling portion of the metal bridge 36 are arranged in parallel with a slight gap of 1 mm or less.

When the power semiconductor chips 7 and 8 are soldered to the metal base, the solder is transmitted from the fitting hole 33 by a capillary effect, and the solder is also transmitted between the input / output terminal 34 and the metal bridge 36 for soldering. Can be.

[0012]

According to the present invention, the contact resistance can be reduced by fitting the input / output terminal 4 to the metal bridge 6 or the metal input / output terminal 34 to the metal bridge 36 and increasing the contact area of the connection portion by soldering. The electrical resistance between 7 and 8 can be reduced. Further, when soldering the power semiconductor element, the input / output terminal 34 and the metal bridge 36
Are soldered, eliminating the need for a manual soldering process.

[Brief description of the drawings]

FIG. 1 is a sectional view of a power semiconductor device according to an embodiment of the first invention.

FIG. 2 is a partially enlarged view of FIG.

FIG. 3 is a sectional view of a power semiconductor device according to an embodiment of the second invention.

FIG. 4 is a partially enlarged view of FIG. 3;

FIG. 5 is a sectional view of a conventional power semiconductor device.

FIG. 6 is a partially enlarged view of FIG. 5;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Metal base 2 Insulating layer 3,4,5,34,44,45 Input / output terminal 6,36,46 Metal bridge 7,8 Power semiconductor chip 21,31,33 Fitting hole 22,32,35 Projection

────────────────────────────────────────────────── ─── Continued on front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 25/00-25/18

Claims (2)

(57) [Claims] 1. A metal base, an insulating layer to be soldered on the metal base, a first input / output terminal provided on the insulating layer, and a U-shaped and horizontally positioned with respect to the metal base. A second input / output terminal whose part to be soldered is soldered on the insulating layer; first and second power semiconductor chips mounted and soldered on the two input / output terminals, respectively; And a metal bridge for electrically connecting the metal base, the second input / output terminal rises vertically with respect to the metal base, and a tip of the first projection fits into the metal bridge. The metal bridge is a metal bridge having a first fitting hole in which the second input / output terminal side fits with the projection and vertically descending from the fitting hole. The power semiconductor device, wherein the second terminal that rises vertically and a metal bridge that falls vertically with respect to the metal base are arranged in parallel at a slight interval. 2. A metal base, an insulating layer to be soldered on the metal base, a first input / output terminal provided on the insulating layer, and a U-shape which is positioned horizontally with respect to the metal base. A second input / output terminal whose part to be soldered is soldered on the insulating layer; first and second power semiconductor chips mounted and soldered on the two input / output terminals, respectively; In a power semiconductor device comprising a metal bridge electrically connected to the metal base, the second input / output terminal rises perpendicularly to the metal base, and a second fitting hole fits into the metal bridge before the rise. And a terminal having a first projection fitted at the tip thereof to the metal bridge, wherein the metal bridge has a first fitting hole at a second input / output terminal side fitted to the first projection. Have and said Down from 1 of the fitting hole in the vertical,
The tip is a metal bridge having a second projection that fits into a second fitting hole, and the second terminal that rises vertically with respect to the metal base and the metal bridge that falls vertically with respect to the metal base. A power semiconductor device, wherein the power semiconductor devices are arranged in parallel at a slight interval.