JP3348923B2 - Adhesive sheet for attaching wafer - Google Patents

Adhesive sheet for attaching wafer

Info

Publication number
JP3348923B2
JP3348923B2 JP18470493A JP18470493A JP3348923B2 JP 3348923 B2 JP3348923 B2 JP 3348923B2 JP 18470493 A JP18470493 A JP 18470493A JP 18470493 A JP18470493 A JP 18470493A JP 3348923 B2 JP3348923 B2 JP 3348923B2
Authority
JP
Japan
Prior art keywords
radiation
sensitive adhesive
pressure
adhesive layer
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP18470493A
Other languages
Japanese (ja)
Other versions
JPH0745557A (en
Inventor
幹 夫 小宮山
尾 秀 男 妹
野 茂 細
部 和 義 江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lintec Corp
Original Assignee
Lintec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16157916&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3348923(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lintec Corp filed Critical Lintec Corp
Priority to JP18470493A priority Critical patent/JP3348923B2/en
Publication of JPH0745557A publication Critical patent/JPH0745557A/en
Application granted granted Critical
Publication of JP3348923B2 publication Critical patent/JP3348923B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J175/00Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04Polyurethanes
    • C09J175/14Polyurethanes having carbon-to-carbon unsaturated bonds
    • C09J175/16Polyurethanes having carbon-to-carbon unsaturated bonds having terminal carbon-to-carbon unsaturated bonds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • C09J7/381Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2312/00Crosslinking
    • C08L2312/06Crosslinking by radiation
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/20Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00Presence of (meth)acrylic polymer
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2475/00Presence of polyurethane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/274Manufacturing methods by blanket deposition of the material of the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83191Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01012Magnesium [Mg]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01024Chromium [Cr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01032Germanium [Ge]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01038Strontium [Sr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01051Antimony [Sb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01056Barium [Ba]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01058Cerium [Ce]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の技術分野】本発明はウェハ貼着用粘着シートに
関し、さらに詳しくは、半導体ウェハを小片に切断分離
し、リードフレームにダイボンディングする際に用いら
れるウェハ貼着用粘着シートに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive sheet for attaching a wafer, and more particularly, to an adhesive sheet for attaching a wafer which is used when a semiconductor wafer is cut and separated into small pieces and die-bonded to a lead frame.

【0002】[0002]

【発明の技術的背景】シリコン、ガリウムヒ素などの半
導体ウェハは大径の状態で製造され、このウェハは素子
小片(ICチップ)に切断分離(ダイシング)された後
に次の工程であるマウント工程に移されている。この
際、半導体ウェハは予じめ粘着シートに貼着された状態
でダイシング、洗浄、乾燥、エキスパンディング、ピッ
クアップの各工程が加えられた後、次工程のボンディン
グ工程に移送される。
BACKGROUND OF THE INVENTION Semiconductor wafers of silicon, gallium arsenide and the like are manufactured in a large-diameter state, and this wafer is cut and separated (diced) into element pieces (IC chips) and then subjected to the next step of a mounting step. Has been moved. At this time, the dicing, cleaning, drying, expanding, and pick-up steps are added to the semiconductor wafer in a state in which the semiconductor wafer is attached to the adhesive sheet in advance, and then the semiconductor wafer is transferred to the next bonding step.

【0003】このような半導体ウェハのダイシング工程
からピックアップ工程に至る工程で用いられる粘着シー
トとしては、ダイシング工程から乾燥工程まではウェハ
チップに対して充分な接着力を有しており、ピックアッ
プ時にはウェハチップに粘着剤が付着しない程度の接着
力を有しているものが望まれている。
[0003] Such an adhesive sheet used in the steps from the dicing step to the pick-up step of a semiconductor wafer has a sufficient adhesive force to the wafer chip from the dicing step to the drying step, and the wafer is picked up during the pick-up. It is desired that the chip has such an adhesive strength that an adhesive does not adhere to the chip.

【0004】ピックアップされたチップは、ダイボンデ
ィング工程において、エポキシ接着剤などのダイ接着用
接着剤を介してリードフレームに接着され、半導体装置
が製造されている。しかしながら、チップが非常に小さ
な場合には、適量の接着剤を塗布することが困難であ
り、ICチップから接着剤がはみ出したり、あるいはI
Cチップが大きい場合には、接着剤量が不足するなど、
充分な接着力を有するように接着を行うことができない
などという問題点があった。またこのようなダイ接着用
接着剤の塗布作業は煩雑でもあり、プロセスを簡略化す
るためにも改善が要求されている。
[0004] In a die bonding step, the picked-up chip is bonded to a lead frame via a die bonding adhesive such as an epoxy bonding agent to manufacture a semiconductor device. However, when the chip is very small, it is difficult to apply an appropriate amount of adhesive, and the adhesive may protrude from the IC chip, or the IC may not be applied.
If the C chip is large, the amount of adhesive will be insufficient.
There has been a problem that bonding cannot be performed so as to have a sufficient bonding strength. In addition, such an operation of applying the die-bonding adhesive is complicated, and improvement is required to simplify the process.

【0005】このような問題点を解決するために、ウェ
ハ固定機能とダイ接着機能とを同時に兼ね備えたウェハ
貼着用粘着シートが種々提案されている(たとえば、特
開平2−32181号公報、特開平3−268345号
公報、特公平3−34853号公報等参照)。
In order to solve such a problem, various types of pressure-sensitive adhesive sheets for attaching a wafer having both a wafer fixing function and a die bonding function have been proposed (for example, JP-A-2-32181 and JP-A-2-32181). JP-A-3-268345, JP-B-3-34853, etc.).

【0006】特開平2−32181号公報には、(メ
タ)アクリル酸エステル共重合体、エポキシ樹脂、光重
合性低分子化合物、熱活性型潜在性エポキシ樹脂硬化剤
および光重合開始剤よりなる組成物から形成される粘接
着層と、基材とからなる粘接着テープが開示されてい
る。この粘接着層は、ウェハダイシング時には、ウェハ
を固定する機能を有し、ダイシング終了後、エネルギー
線を照射すると硬化し、基材との間の接着力が低下す
る。したがって、チップのピックアップを行うと、粘接
着層は、チップとともに剥離する。粘接着層を伴ったI
Cチップをリードフレームに載置し、加熱すると、粘接
着層が接着力を発現し、ICチップとリードフレームと
の接着が完了する。
JP-A-2-32181 discloses a composition comprising a (meth) acrylate copolymer, an epoxy resin, a photopolymerizable low-molecular compound, a heat-active latent epoxy resin curing agent and a photopolymerization initiator. An adhesive tape comprising an adhesive layer formed from a product and a substrate is disclosed. The adhesive layer has a function of fixing the wafer at the time of wafer dicing, and after the dicing is completed, is hardened by irradiating with an energy ray, and the adhesive strength between the substrate and the base material is reduced. Therefore, when the chip is picked up, the adhesive layer peels off together with the chip. I with adhesive layer
When the C chip is placed on the lead frame and heated, the adhesive layer develops an adhesive force, and the bonding between the IC chip and the lead frame is completed.

【0007】特公平3−34853号公報には、剥離層
が実質的に存在しない表面を有する重合体支持フィルム
と、導電性接着剤とからなるダイシング用フィルムが教
示されている。この導電性接着剤は、上記の粘接着層と
略同等の機能を有する。
[0007] Japanese Patent Publication No. 3-34853 teaches a dicing film comprising a polymer support film having a surface substantially free of a release layer and a conductive adhesive. This conductive adhesive has substantially the same function as the above-mentioned adhesive layer.

【0008】また特開平3−268345号公報には、
支持基材上に設けられた加熱発泡粘着層の上に、ダイ接
着用の接着剤層が設けられており、加熱により該接着剤
層と加熱発泡粘着層とが剥離可能となる、半導体ウェハ
の分断時の支持機能を兼ね備えたダイ接着用シートが教
示されている。
Japanese Patent Application Laid-Open No. 3-268345 discloses that
An adhesive layer for die bonding is provided on the heat-foamable pressure-sensitive adhesive layer provided on the support substrate, and the adhesive layer and the heat-foamable pressure-sensitive adhesive layer can be peeled off by heating. A die bonding sheet having a supporting function at the time of cutting is taught.

【0009】上記公報類に開示されているウェハ貼着用
粘着シートは、いわゆるダイレクトダイボンディングを
可能にし、ダイ接着用接着剤の塗布工程を省略できるよ
うになる。
The pressure-sensitive adhesive sheet for attaching a wafer disclosed in the above publications enables so-called direct die bonding, so that the step of applying a die bonding adhesive can be omitted.

【0010】本発明者らは、このようなダイレクトダイ
ボンディングを可能にするようなウェハ貼着用粘着シー
トの1種として、基材面上に、放射線硬化型粘着剤層
と、ダイ接着用接着剤層とがこの順に形成されてなるウ
ェハ貼着用粘着シートについての改良研究を行ってい
る。
The present inventors have proposed a kind of pressure-sensitive adhesive sheet for attaching a wafer which enables such direct die bonding, a radiation-curable pressure-sensitive adhesive layer and a die bonding adhesive on a substrate surface. We are conducting an improvement study on a pressure-sensitive adhesive sheet for attaching a wafer, in which layers are formed in this order.

【0011】放射線硬化型粘着剤としては従来より、光
照射によって三次元網状化しうる、分子内に光重合性炭
素−炭素二重結合を少なくとも2個以上有する低分子量
放射線硬化性化合物からなる粘着剤が提案されている。
粘着剤の硬化は、その粘着剤中に含まれる放射線硬化性
化合物を放射線照射によって硬化させ粘着剤に三次元網
状化構造を与えて、その流動性を著しく低下させる原理
に基づく。
As the radiation-curable pressure-sensitive adhesive, a pressure-sensitive adhesive composed of a low-molecular-weight radiation-curable compound having at least two or more photopolymerizable carbon-carbon double bonds in a molecule, which can be formed into a three-dimensional network by light irradiation, has been used. Has been proposed.
The curing of the pressure-sensitive adhesive is based on the principle that a radiation-curable compound contained in the pressure-sensitive adhesive is cured by irradiation with radiation to give a three-dimensional network structure to the pressure-sensitive adhesive, thereby significantly reducing its fluidity.

【0012】上記した、基材面上に、放射線硬化型粘着
剤層と、ダイ接着用接着剤層とがこの順に形成されてな
るウェハ貼着用粘着シートについての研究の過程で、特
にエキスパンディング工程およびピックアップ工程にお
いて次のような問題点があることが本発明者らにより見
出された。
[0012] In the above-mentioned process of researching the pressure-sensitive adhesive sheet for attaching a wafer in which a radiation-curable pressure-sensitive adhesive layer and a die-bonding pressure-sensitive adhesive layer are formed in this order on a substrate surface, an expanding step is particularly required. The present inventors have found that there are the following problems in the pickup step.

【0013】エキスパンディング工程は、ダイシングさ
れた素子小片(チップ)の間隔を広げ、チップのピック
アップを容易にする工程である。上記のウェハ貼着用粘
着シートを用いると、粘着剤層の硬化が相当進行し、粘
着剤層がかなり硬くなる(1×108 〜1×109(dyne
s/cm2))。このためシートの伸び率(拡張率)が小さく
なるため、所望のチップ間隔を得るのが困難であった。
すなわち、隣接するチップとチップとの間隔が充分に得
られず、ピックアップ工程における認識不良の原因とな
り、誤動作を起こすことがあった。
The expanding step is a step of widening the interval between diced element pieces (chips) to facilitate chip pickup. When the above-mentioned pressure-sensitive adhesive sheet for attaching a wafer is used, the curing of the pressure-sensitive adhesive layer progresses considerably, and the pressure-sensitive adhesive layer becomes considerably hard (1 × 10 8 to 1 × 10 9 (dyne
s / cm 2 )). For this reason, the elongation rate (expansion rate) of the sheet becomes small, so that it was difficult to obtain a desired chip interval.
That is, a sufficient distance between adjacent chips cannot be obtained, which may cause a recognition failure in the pickup process and cause a malfunction.

【0014】また上記のような問題点があるため、用い
られる基材についても限定される場合があった。
[0014] Further, due to the above-mentioned problems, there are cases where the base material used is also limited.

【0015】[0015]

【発明の目的】本発明は、上記のような従来技術に鑑み
てなされたものであって、放射線照射により極端に硬化
した粘着剤層に起因するエキスパンディング工程および
ピックアップ工程における上記問題点を解決することを
目的としている。また本発明は、上記問題点を解決する
ことにより、基材の材料マージンを広げることを目的と
している。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned prior art, and solves the above-mentioned problems in the expanding step and the pick-up step caused by the pressure-sensitive adhesive layer which has been extremely cured by irradiation. It is intended to be. Another object of the present invention is to increase the material margin of the base material by solving the above problems.

【0016】[0016]

【発明の概要】本発明に係るウェハ貼着用粘着シート
は、基材面上に、粘着剤と放射線重合性オリゴマーとか
らなる放射線硬化型粘着剤層と、ダイ接着用接着剤層と
がこの順に形成されてなり、該放射線硬化型粘着剤層の
放射線硬化後における弾性率が1×106(dynes/cm2)〜
1×108(dynes/cm2)であることを特徴としている。
The pressure-sensitive adhesive sheet for attaching a wafer according to the present invention comprises a radiation-curable pressure-sensitive adhesive layer comprising a pressure-sensitive adhesive and a radiation-polymerizable oligomer, and a die-bonding adhesive layer on a substrate surface in this order. The radiation-curable pressure-sensitive adhesive layer has an elastic modulus of 1 × 10 6 (dynes / cm 2 ) after radiation curing.
It is 1 × 10 8 (dynes / cm 2 ).

【0017】本発明に係るウェハ貼着用粘着シートにお
いては、前記放射線硬化型粘着剤層中において、該放射
線重合性オリゴマーが、1〜30μmの分散粒径を有
し、かつ均一に分散されてなることが好ましい。
In the pressure-sensitive adhesive sheet for attaching a wafer according to the present invention, the radiation-polymerizable oligomer has a dispersed particle size of 1 to 30 μm and is uniformly dispersed in the radiation-curable pressure-sensitive adhesive layer. Is preferred.

【0018】[0018]

【発明の具体的説明】本発明に係るウェハ貼着用粘着シ
ート1は、その断面図が図1に示されるように、基材2
と、この上に形成された放射線硬化型粘着剤層3と、放
射線硬化型粘着剤層3上に形成されたダイ接着用接着剤
層4とから構成されている。使用前にはこのダイ接着用
接着剤層4を保護するため、図2に示すようにダイ接着
用接着剤層4の上面に剥離性シート5を仮粘着しておく
ことが好ましい。
DETAILED DESCRIPTION OF THE INVENTION An adhesive sheet 1 for attaching a wafer according to the present invention has a substrate 2 as shown in the sectional view of FIG.
And a radiation-curable pressure-sensitive adhesive layer 3 formed thereon, and a die-bonding adhesive layer 4 formed on the radiation-curable pressure-sensitive adhesive layer 3. Before use, in order to protect the adhesive layer 4 for die bonding, it is preferable to temporarily adhere a peelable sheet 5 to the upper surface of the adhesive layer 4 for die bonding as shown in FIG.

【0019】本発明に係る粘着シートの形状は、テープ
状、ラベル状などあらゆる形状をとりうる。以下、本発
明で用いられる基材2、放射線硬化型粘着剤層3および
ダイ接着用接着剤層4について順次説明する。
The shape of the pressure-sensitive adhesive sheet according to the present invention can take any shape such as a tape shape and a label shape. Hereinafter, the substrate 2, the radiation-curable pressure-sensitive adhesive layer 3, and the die-bonding adhesive layer 4 used in the present invention will be sequentially described.

【0020】基材2としては、長さ方向および幅方向に
延伸性を有する合成樹脂フィルムを基材として用いるこ
とが好ましい。このような基材2としては、具体的に
は、ポリエチレンフィルム、ポリプロピレンフィルム、
ポリブテンフィルム、ポリ塩化ビニルフィルム、ポリエ
チレンテレフタレートフィルム、ポリブチレンテレフタ
レートフィルム、ポリブタジエンフィルム、ポリウレタ
ンフィルム、ポリメチルペンテンフィルム、エチレン酢
ビフィルム、アイオノマーおよびエチレン・(メタ)ア
クリル酸共重合体フィルム等ならびにこれらの架橋フィ
ルムが用いられる。またこれらの積層フィルムであって
もよい。基材2の膜厚は、通常は10〜300μm程度
であり、好ましくは50〜200μm程度である。
As the substrate 2, a synthetic resin film having stretchability in the length direction and the width direction is preferably used. As such a substrate 2, specifically, a polyethylene film, a polypropylene film,
Polybutene film, polyvinyl chloride film, polyethylene terephthalate film, polybutylene terephthalate film, polybutadiene film, polyurethane film, polymethylpentene film, ethylene vinyl acetate film, ionomer, ethylene / (meth) acrylic acid copolymer film and the like and cross-linking thereof A film is used. Also, these laminated films may be used. The film thickness of the base material 2 is usually about 10 to 300 μm, preferably about 50 to 200 μm.

【0021】本発明の粘着シートでは、後述するよう
に、その使用に当たり、電子線(EB)や紫外線(U
V)などの放射線照射が行なわれるが、EB照射の場合
には、該基材2は透明である必要はないが、UV照射を
して用いる場合には、透明である必要がある。
In the pressure-sensitive adhesive sheet of the present invention, as will be described later, the electron beam (EB) or the ultraviolet (U)
The substrate 2 is not required to be transparent in the case of EB irradiation, but needs to be transparent in the case of UV irradiation.

【0022】本発明に係るウェハ貼着用粘着シート1
は、上記のような基材2と、この基材2上に形成された
放射線硬化型粘着剤からなる層3と、層3上に形成され
たダイ接着用接着剤層4とから構成されている。
The adhesive sheet 1 for attaching a wafer according to the present invention
Comprises a substrate 2 as described above, a layer 3 made of a radiation-curable pressure-sensitive adhesive formed on the substrate 2, and a die-bonding adhesive layer 4 formed on the layer 3. I have.

【0023】放射線硬化型粘着剤層3は、粘着剤と放射
線重合性オリゴマーとから形成されている。放射線硬化
型粘着剤層3の放射線硬化後における弾性率は、1×1
6(dynes/cm2)〜1×108(dynes/cm2)であり、好まし
くは5×106(dynes/cm2)〜5×107(dynes/cm2)であ
る。
The radiation-curable pressure-sensitive adhesive layer 3 is formed from a pressure-sensitive adhesive and a radiation-polymerizable oligomer. The elastic modulus of the radiation-curable pressure-sensitive adhesive layer 3 after radiation curing is 1 × 1
0 6 (dynes / cm 2 ) to 1 × 10 8 (dynes / cm 2 ), preferably 5 × 10 6 (dynes / cm 2 ) to 5 × 10 7 (dynes / cm 2 ).

【0024】本発明に係るウェハ貼着用粘着シートにお
いては、放射線硬化後の放射線硬化型粘着剤3層が上記
のように特定の弾性率を有する。したがって、放射線照
射を行うと、放射線硬化型粘着剤層3の粘着力はチップ
体のピックアップを行える程度に粘着力が低下し、また
充分なエキスパンディングを行える程度の弾性率が維持
される。この結果、所望のチップ間距離が容易に得られ
るようになる。
In the pressure-sensitive adhesive sheet for attaching a wafer according to the present invention, the three radiation-curable pressure-sensitive adhesive layers after radiation curing have the specific elastic modulus as described above. Therefore, when the radiation is applied, the adhesive strength of the radiation-curable adhesive layer 3 is reduced to such an extent that the chip can be picked up, and the elastic modulus enough to perform sufficient expanding is maintained. As a result, a desired distance between chips can be easily obtained.

【0025】このような放射線硬化型粘着剤層3の膜厚
は、通常は、3〜50μm程度であり、好ましくは5〜
30μm程度である。また放射線硬化型粘着剤層3中に
おいて、放射線重合性オリゴマーは、好ましくは1〜3
0μm、特に好ましくは1〜10μmの分散粒径を有
し、放射線硬化型粘着剤層3中に均一に分散している。
ここで、分散粒径は、放射線硬化型粘着剤層3を、60
0倍の顕微鏡で観察して、顕微鏡内のスケールにて実測
することで決定される値である。また、均一分散とは、
隣接する粒子間の距離が、0.1〜10μmである状態
をいう。分散粒径が30μmを超える場合、放射線硬化
性粘着剤層3は、実質上、相分離しており、放射線硬化
前の粘着性も、放射線硬化後のピックアップ性も実現で
きない。また分散粒径が全て0.1μm以下の場合は、
放射線硬化性粘着剤層3は、実質上、完全相溶系であ
り、放射線硬化後の弾性率が上昇し、エキスパンディン
グおよびピックアップ性に劣ってしまう。このような構
造は、「海島構造」と呼ばれ、放射線を照射すると重合
硬化する部分(島部)と、重合にあずからない部分(海
部)とが均一に分散にしている状態である。したがっ
て、放射線照射を行うと、重合硬化した部分においては
粘着力、弾性率ともに大幅に低下するが、重合硬化にあ
ずからない部分においては粘着力、弾性率ともに維持さ
れる。この結果、全体としては、チップ体(ダイ接着用
接着剤を伴う)のピックアップを行える程度に粘着力が
低下し、また充分なエキスパンディングを行える程度の
弾性率が維持される。
The thickness of the radiation-curable pressure-sensitive adhesive layer 3 is usually about 3 to 50 μm, preferably 5 to 50 μm.
It is about 30 μm. In the radiation-curable pressure-sensitive adhesive layer 3, the radiation-polymerizable oligomer is preferably 1 to 3.
It has a dispersed particle size of 0 μm, particularly preferably 1 to 10 μm, and is uniformly dispersed in the radiation-curable pressure-sensitive adhesive layer 3.
Here, the dispersion particle size is such that the radiation-curable pressure-sensitive adhesive layer 3
It is a value determined by observing with a microscope of 0 magnification and actually measuring on a scale in the microscope. Also, what is uniform dispersion?
It refers to a state in which the distance between adjacent particles is 0.1 to 10 μm. When the dispersed particle size exceeds 30 μm, the radiation-curable pressure-sensitive adhesive layer 3 is substantially phase-separated, and cannot realize the tackiness before the radiation curing and the pickup property after the radiation curing. When the dispersed particle diameters are all 0.1 μm or less,
The radiation-curable pressure-sensitive adhesive layer 3 is substantially a completely compatible system, has an increased elastic modulus after radiation curing, and is inferior in expandability and pickup properties. Such a structure is called a “sea-island structure”, in which a portion that is polymerized and cured by irradiation (island portion) and a portion that does not participate in polymerization (sea portion) are uniformly dispersed. Therefore, when irradiation is performed, both the adhesive strength and the elastic modulus are significantly reduced in the polymerized and cured portion, but both the adhesive strength and the elastic modulus are maintained in the portion not undergoing the polymerization and curing. As a result, as a whole, the adhesive strength is reduced to such an extent that the chip body (including the die bonding adhesive) can be picked up, and the elastic modulus enough to perform sufficient expanding is maintained.

【0026】ここで、弾性率は以下の手法により決定さ
れる値である。すなわち、層3を構成する放射線硬化型
粘着剤を80W/cmの高圧水銀灯下に置き、1秒間放射
線を照射する。これを円柱状に貼り合わせ、底面φ8m
m、高さ5mmとし、これを粘弾性測定に供した。放射線
硬化後の試料の貯蔵弾性率は、レオメトリックス(製)
RDS−IIを用いて剪断法により測定された。測定条件
は、23℃、500rad/秒である。
Here, the elastic modulus is a value determined by the following method. That is, the radiation-curable pressure-sensitive adhesive constituting the layer 3 is placed under a high-pressure mercury lamp of 80 W / cm and irradiated with radiation for one second. This is laminated in a columnar shape, bottom surface φ8m
m and a height of 5 mm, which were subjected to viscoelasticity measurement. The storage modulus of the sample after radiation curing is determined by Rheometrics
It was measured by a shear method using RDS-II. The measurement conditions are 23 ° C. and 500 rad / sec.

【0027】放射線硬化型粘着剤層3を構成する粘着剤
としてはアクリル系粘着剤が好ましく、具体的には、
(メタ)アクリル酸エステルあるいはその誘導体を主た
る構成単量体単位とする(メタ)アクリル酸エステル共
重合体、あるいはこれら共重合体の混合物が用いられ
る。
The pressure-sensitive adhesive constituting the radiation-curable pressure-sensitive adhesive layer 3 is preferably an acrylic pressure-sensitive adhesive.
A (meth) acrylate copolymer containing (meth) acrylate or a derivative thereof as a main constituent monomer unit, or a mixture of these copolymers is used.

【0028】特に、(メタ)アクリル酸エステル共重合
体としては、アルキル基の炭素数が1〜14である(メ
タ)アクリル酸アルキルエステルから選択される少なく
とも1種以上の(メタ)アクリル酸アルキルエステルモ
ノマーと、(メタ)アクリル酸グリシジル、(メタ)ア
クリル酸ジメチルアミノエチル、(メタ)アクリル酸ジ
エチルアミノエチル、(メタ)アクリル酸2-ヒドロキシ
エチル、酢酸ビニル、スチレン、塩化ビニルから選択さ
れる少なくとも1種の酸基を有しない極性モノマーと、
アクリル酸、メタクリル酸、マレイン酸から選択される
少なくとも1種の酸基を有するコモノマーとの共重合体
が用いられる。
In particular, as the (meth) acrylate copolymer, at least one or more alkyl (meth) acrylates selected from alkyl (meth) acrylates having an alkyl group having 1 to 14 carbon atoms. An ester monomer and at least one selected from glycidyl (meth) acrylate, dimethylaminoethyl (meth) acrylate, diethylaminoethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, vinyl acetate, styrene, and vinyl chloride A polar monomer having no one acid group;
A copolymer with a comonomer having at least one acid group selected from acrylic acid, methacrylic acid, and maleic acid is used.

【0029】このような(メタ)アクリル酸エステル共
重合体中では、(メタ)アクリル酸アルキルエステルモ
ノマーと、酸基を有しない極性モノマーと、酸基を有す
るコモノマーとの比は、通常35〜99/1〜60/0
〜5であり、特に好ましくは70〜95/5〜30/0
である。
In such a (meth) acrylate copolymer, the ratio of the (meth) acrylate alkyl ester monomer, the polar monomer having no acid group, and the comonomer having the acid group is usually 35 to 35. 99/1 to 60/0
To 5, particularly preferably 70 to 95/5 to 30/0.
It is.

【0030】コモノマーとして、酸基を有しない極性モ
ノマーが60重量%を超えて共重合されると、放射線硬
化型粘着剤層3は、完全相溶系となり、放射線硬化後に
おける弾性率が1×108(dynes /cm2)を超えてしま
い、充分なエキスパンド性、ピックアップ性が得られな
くなり、一方、1重量%未満で共重合されると、放射線
硬化型粘着剤層3は不均一な分散系となり、良好な粘着
物性が得られなくなる。
When a polar monomer having no acid group is copolymerized as a comonomer in an amount exceeding 60% by weight, the radiation-curable pressure-sensitive adhesive layer 3 becomes a completely compatible system and has an elastic modulus of 1 × 10 4 after radiation curing. 8 (dynes / cm 2 ), so that sufficient expandability and pickup property cannot be obtained. On the other hand, if the copolymerization is less than 1% by weight, the radiation-curable pressure-sensitive adhesive layer 3 may have an uneven dispersion system. And good adhesive properties cannot be obtained.

【0031】(メタ)アクリル酸エステル共重合体中に
おける、(メタ)アクリル酸アルキルエステルモノマー
と(酸基を有しない極性モノマー+酸基を有するコモノ
マー)との重量比は、通常99/1〜60/40であ
り、特に好ましくは95/5〜80/20である。な
お、酸基を有するコモノマーとして(メタ)アクリル酸
が共重合される場合には、(メタ)アクリル酸の共重合
量は、5重量%以下であることが好ましい。酸基を有す
るコモノマーとして(メタ)アクリル酸が5重量%を超
えて共重合されると、放射線硬化型粘着剤層3は、完全
相溶系となり充分なエキスパンド性、ピックアップ性が
得られなくなる場合がある。
In the (meth) acrylic acid ester copolymer, the weight ratio of the (meth) acrylic acid alkyl ester monomer to the (polar monomer not having an acid group + the comonomer having an acid group) is usually 99/1 to 99/1. 60/40, particularly preferably 95/5 to 80/20. When (meth) acrylic acid is copolymerized as a comonomer having an acid group, the copolymerization amount of (meth) acrylic acid is preferably 5% by weight or less. When (meth) acrylic acid is copolymerized in excess of 5% by weight as a comonomer having an acid group, the radiation-curable pressure-sensitive adhesive layer 3 becomes a completely compatible system and may not have sufficient expandability and pickup properties. is there.

【0032】またこれらのモノマーを共重合して得られ
る(メタ)アクリル酸エステル共重合体の重量平均分子
量は、2.0×105〜10.0×105であり、好まし
くは、4.0×105〜8.0×105である。
The weight average molecular weight of the (meth) acrylate copolymer obtained by copolymerizing these monomers is from 2.0 × 10 5 to 10.0 × 10 5 , and preferably 4. It is 0 × 10 5 to 8.0 × 10 5 .

【0033】放射線硬化型粘着剤層3を構成する放射線
重合性オリゴマーとしては、分子量が3000〜300
00程度、好ましくは5000〜10000程度であ
り、分子内に炭素−炭素二重結合を少なくとも1個以上
有する化合物が用いられる。具体的には、ウレタンアク
リレート系オリゴマー、エポキシ変性ウレタンアクリレ
ートオリゴマーあるいはエポキシアクリレートオリゴマ
ー等が用いられる。
The radiation-polymerizable oligomer constituting the radiation-curable pressure-sensitive adhesive layer 3 has a molecular weight of 3,000 to 300.
It is about 00, preferably about 5,000 to 10,000, and a compound having at least one carbon-carbon double bond in the molecule is used. Specifically, a urethane acrylate oligomer, an epoxy-modified urethane acrylate oligomer or an epoxy acrylate oligomer is used.

【0034】ウレタンアクリレート系オリゴマーは、ポ
リエステル型またはポリエーテル型などのポリオール化
合物と、多価イソシアネート化合物たとえば2,4−ト
リレンジイソシアネート、2,6−トリレンジイソシア
ネート、1,3−キシリレンジイソシアネート、1,4
−キシリレンジイソシアネート、ジフェニルメタン4,
4−ジイソシアネートなどを反応させて得られる末端イ
ソシアネートウレタンプレポリマーに、ヒドロキシル基
を有するアクリレートあるいはメタクリレートたとえば
2−ヒドロキシエチルアクリレートまたは2−ヒドロキ
シエチルメタクリレート、2−ヒドロキシプロピルアク
リレート、2−ヒドロキシプロピルメタクリレート、ポ
リエチレングリコールアクリレート、ポリエチレングリ
コールメタクリレートなどを反応させて得られる。この
ウレタンアクリレート系オリゴマーは、炭素−炭素二重
結合を少なくとも1個以上有する放射線重合性化合物で
ある。
The urethane acrylate oligomer includes a polyol compound such as a polyester type or a polyether type and a polyvalent isocyanate compound such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4
-Xylylene diisocyanate, diphenylmethane 4,
Acrylate or methacrylate having a hydroxyl group, for example, 2-hydroxyethyl acrylate or 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene is added to a terminal isocyanate urethane prepolymer obtained by reacting 4-diisocyanate or the like. It is obtained by reacting glycol acrylate, polyethylene glycol methacrylate and the like. This urethane acrylate oligomer is a radiation polymerizable compound having at least one carbon-carbon double bond.

【0035】このようなウレタンアクリレート系オリゴ
マーとして、特に分子量が3000〜30000、好ま
しくは3000〜10000、さらに好ましくは400
0〜8000であるものが好ましい。
The urethane acrylate oligomer has a molecular weight of 3,000 to 30,000, preferably 3,000 to 10,000, more preferably 400 to 10,000.
What is 0-8000 is preferable.

【0036】本発明における放射線硬化型粘着剤中の粘
着剤と放射線重合性オリゴマーの配合比は、粘着剤10
0重量部に対して放射線重合性オリゴマーは20〜20
0重量部、特には50〜150重量部の範囲の量で用い
られることが好ましい。この場合には、放射線硬化型粘
着剤層3とダイ接着用接着剤層4との間に大きな初期接
着力が得られ、しかも放射線照射後には接着力は大きく
低下し、容易にウェハチップとダイ接着用接着剤層4と
を該粘着シートからピックアップすることができる。ま
たある程度の弾性率が維持されるため、エキスパンディ
ング工程において、所望のチップ間隔を得ることが容易
になり、かつチップ体のズレ等も発生せず、ピックアッ
プを安定して行えるようになる。
The mixing ratio of the pressure-sensitive adhesive to the radiation-polymerizable oligomer in the radiation-curable pressure-sensitive adhesive in the present invention is 10
20 to 20 parts by weight of radiation polymerizable oligomer
It is preferably used in an amount of 0 parts by weight, in particular 50 to 150 parts by weight. In this case, a large initial adhesive force is obtained between the radiation-curable pressure-sensitive adhesive layer 3 and the die-bonding adhesive layer 4, and the adhesive force is significantly reduced after irradiation, so that the wafer chip and the die can be easily removed. The bonding adhesive layer 4 can be picked up from the pressure-sensitive adhesive sheet. In addition, since a certain degree of elasticity is maintained, it is easy to obtain a desired chip interval in the expanding step, and the chip can be stably picked up without any deviation of the chip body.

【0037】層3を構成する放射線硬化型粘着剤は、上
記粘着剤と放射線重合性オリゴマーとを、所定重量部混
合後、攪拌することにより得られる。また必要に応じて
は、放射線硬化型粘着剤層3中に、反応性希釈剤を添加
してもよい。反応性希釈剤としては、分子量が100〜
3000程度、好ましくは100〜1500程度であ
り、分子内に炭素−炭素二重結合を少なくとも1個以上
有する重合性化合物が用いられる。具体的には、トリメ
チロールプロパントリアクリレート、テトラメチロール
メタンテトラアクリレート、ペンタエリスリトールトリ
アクリレート、ペンタエリスリトールテトラアクリレー
ト、ジペンタエリスリトールモノヒドロキシペンタアク
リレート、ジペンタエリスリトールヘキサアクリレート
あるいは1,4−ブチレングリコールジアクリレート、
1,6−ヘキサンジオールジアクリレート、ポリエチレ
ングリコールジアクリレート、市販のオリゴエステルア
クリレートなどが用いられる。反応性希釈剤は、粘着剤
100重量部に対して0〜50重量部、特には0〜30
重量部の範囲の量で用いられることが好ましい。
The radiation-curable pressure-sensitive adhesive constituting the layer 3 is obtained by mixing the above-mentioned pressure-sensitive adhesive and a radiation-polymerizable oligomer in a predetermined amount by weight and stirring the mixture. If necessary, a reactive diluent may be added to the radiation-curable pressure-sensitive adhesive layer 3. As a reactive diluent, a molecular weight of 100 to
A polymerizable compound having a molecular weight of about 3000, preferably about 100 to 1500, and having at least one carbon-carbon double bond in the molecule is used. Specifically, trimethylol propane triacrylate, tetramethylol methane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1,4-butylene glycol diacrylate,
1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate and the like are used. The reactive diluent is used in an amount of 0 to 50 parts by weight, especially 0 to 30 parts by weight, based on 100 parts by weight of the adhesive.
It is preferably used in an amount in the range of parts by weight.

【0038】さらに上記の放射線硬化型粘着剤層3中
に、光反応開始剤を混入することにより、光照射による
重合硬化時間ならびに光線照射量を少なくなることがで
きる。このような光反応開始剤としては、具体的には、
ベンゾフェノン、アセトフェノン、ベンゾイン、ベンゾ
インメチルエーテル、ベンゾインエチルエーテル、ベン
ゾインイソプロピルエーテル、ベンジルジフェニルサル
ファイド、テトラメチルチウラムモノサルファイド、ア
ゾビスイソブチロニトリル、ジベンジル、ジアセチル、
β−クロールアンスラキノンなどが挙げられる。光反応
開始剤は、粘着剤100重量部に対して0.1〜10重
量部、特には0.5〜5重量部の範囲の量で用いられる
ことが好ましい。
Further, by mixing a photoreaction initiator into the radiation-curable pressure-sensitive adhesive layer 3, the polymerization curing time by light irradiation and the amount of light irradiation can be reduced. As such a photoreaction initiator, specifically,
Benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl,
β-chloranthraquinone and the like. The photoreaction initiator is preferably used in an amount of 0.1 to 10 parts by weight, particularly 0.5 to 5 parts by weight, based on 100 parts by weight of the adhesive.

【0039】また必要に応じては、放射線硬化型粘着剤
層3中に、放射線照射により着色する化合物を含有させ
ることもできる。このような放射線照射により、着色す
る化合物を粘着剤層3に含ませることによって、粘着シ
ートに放射線が照射された後には該シートは着色され、
したがって光センサーによってウェハチップを検出する
際に検出精度が高まり、ウェハチップのピックアップ時
に誤動作が生ずることがない。また粘着シートに放射線
が照射されたか否かが目視により直ちに判明するという
効果が得られる。
If necessary, the radiation-curable pressure-sensitive adhesive layer 3 may contain a compound which is colored by irradiation. By including a compound to be colored in the pressure-sensitive adhesive layer 3 by such radiation irradiation, after the pressure-sensitive adhesive sheet is irradiated with radiation, the sheet is colored,
Therefore, the detection accuracy when detecting the wafer chip by the optical sensor is enhanced, and no malfunction occurs when the wafer chip is picked up. In addition, an effect is obtained that it is immediately possible to visually determine whether or not radiation has been applied to the adhesive sheet.

【0040】放射線照射により着色する化合物は、放射
線の照射前には無色または淡色であるが、放射線の照射
により有色となる化合物であって、この化合物の好まし
い具体例としてはロイコ染料が挙げられる。ロイコ染料
としては、慣用のトリフェニルメタン系、フルオラン
系、フェノチアジン系、オーラミン系、スピロピラン系
のものが好ましく用いられる。具体的には3−[N−
(p−トリルアミノ)]−7−アニリノフルオラン、3
−[N−(p−トリル)−N−メチルアミノ]−7−ア
ニリノフルオラン、3−[N−(p−トリル)−N−エ
チルアミノ]−7−アニリノフルオラン、3−ジエチル
アミノ−6−メチル−7−アニリノフルオラン、クリス
タルバイオレットラクトン、4,4’,4”−トリスジ
メチルアミノトリフェニルメタノール、4,4’,4”
−トリスジメチルアミノトリフェニルメタンなどが挙げ
られる。
The compound that is colored by irradiation with radiation is a compound that is colorless or pale before irradiation with radiation, but is a compound that becomes colored by irradiation with radiation. Preferred specific examples of this compound include leuco dyes. As the leuco dye, commonly used triphenylmethane-based, fluoran-based, phenothiazine-based, auramine-based and spiropyran-based dyes are preferably used. Specifically, 3- [N-
(P-tolylamino)]-7-anilinofluoran, 3
-[N- (p-tolyl) -N-methylamino] -7-anilinofluoran, 3- [N- (p-tolyl) -N-ethylamino] -7-anilinofluoran, 3-diethylamino -6-methyl-7-anilinofluoran, crystal violet lactone, 4,4 ', 4 "-trisdimethylaminotriphenylmethanol, 4,4', 4"
-Trisdimethylaminotriphenylmethane and the like.

【0041】これらロイコ染料とともに好ましく用いら
れる顕色剤としては、従来から用いられているフェノー
ルホルマリン樹脂の初期重合体、芳香族カルボン酸誘導
体、活性白土などの電子受容体が挙げられ、さらに、色
調を変化させる場合は種々公知の発色剤を組合せて用い
ることもできる。
Examples of the developer preferably used together with these leuco dyes include conventionally used electron acceptors such as a phenol formalin resin initial polymer, an aromatic carboxylic acid derivative, and activated clay. In the case where is changed, various known color formers can be used in combination.

【0042】このような放射線照射によって着色する化
合物は、一旦有機溶媒などに溶解された後に接着剤層中
に含ませてもよく、また微粉末状にして粘着剤層中に含
ませてもよい。この化合物は、粘着剤層中に0.01〜
10重量%、好ましくは0.5〜5重量%の量で用いら
れることが望ましい。該化合物が10重量%を超えた量
で用いられると、粘着シートに照射される放射線がこの
化合物に吸収されすぎてしまうため、粘着剤層の硬化が
不十分となることがあり、一方該化合物が0.01重量
%未満の量で用いられると放射線照射時に粘着シートが
充分に着色しないことがあり、ウェハチップのピックア
ップ時に誤動作が生じやすくなることがある。
The compound to be colored by irradiation with radiation may be dissolved in an organic solvent or the like and then included in the adhesive layer, or may be finely powdered and included in the adhesive layer. . This compound is present in the pressure-sensitive adhesive layer in an amount of 0.01 to
It is desirable to use it in an amount of 10% by weight, preferably 0.5 to 5% by weight. When the compound is used in an amount exceeding 10% by weight, the radiation applied to the pressure-sensitive adhesive sheet is excessively absorbed by the compound, and thus the curing of the pressure-sensitive adhesive layer may be insufficient. When used in an amount of less than 0.01% by weight, the pressure-sensitive adhesive sheet may not be sufficiently colored when irradiated with radiation, and malfunction may easily occur when picking up a wafer chip.

【0043】また、上記の放射線硬化型粘着剤層3中に
エキスパンディング剤を添加することもできる。エキス
パンディング剤を添加することにより、放射線硬化型粘
着剤層3の重合硬化後のエキスパンドがさらに容易にな
る。エキスパンディング剤としては、具体的には以下の
ような化合物が用いられる。 (a)高級脂肪酸またはこれらの誘導体 ステアリン酸、ラウリン酸、リシノール酸、ナフテン
酸、2−エチルヘキソイル酸、オレイン酸、リノール
酸、ミリスチン酸、パルミチン酸、イソステアリン酸、
ヒドロキシステアリン酸、ベヘン酸などの、上記の酸の
エステル類。
An expanding agent may be added to the radiation-curable pressure-sensitive adhesive layer 3. The addition of the expanding agent further facilitates the expansion of the radiation-curable pressure-sensitive adhesive layer 3 after polymerization and curing. The following compounds are specifically used as the expanding agent. (A) higher fatty acids or derivatives thereof stearic acid, lauric acid, ricinoleic acid, naphthenic acid, 2-ethylhexoylic acid, oleic acid, linoleic acid, myristic acid, palmitic acid, isostearic acid,
Esters of the above acids, such as hydroxystearic acid and behenic acid.

【0044】上記の酸の金属塩たとえばLi、Mg、C
a、Sr、Ba、Cd、Zn、Pb、Sn、K、Na塩
あるいは上記金属を2種以上含む複合金属塩など。 (b)Siあるいはシロキサン構造を有する化合物。
Metal salts of the above acids, for example, Li, Mg, C
a, Sr, Ba, Cd, Zn, Pb, Sn, K, Na salts or composite metal salts containing two or more of the above metals. (B) Compounds having a Si or siloxane structure.

【0045】シリコーンオイルなど。 (c)フッ素を含む化合物。 (d)エポキシ化合物。[0045] Silicone oil and the like. (C) a compound containing fluorine. (D) an epoxy compound.

【0046】エポキシステアリン酸メチル、エポキシス
テアリン酸ブチル、エポキシ化アマニ油脂肪酸ブチル、
エポキシ化テトラヒドロナフタレート、ビスフェノール
Aジグリシジルエーテル、エポキシ化ブタジエン。 (e)ポリオール化合物またはこれらの誘導体。
Methyl epoxy stearate, butyl epoxy stearate, epoxidized linseed oil fatty acid butyl,
Epoxidized tetrahydronaphthalate, bisphenol A diglycidyl ether, epoxidized butadiene. (E) a polyol compound or a derivative thereof.

【0047】グリセリン、ジグリセリン、ソルビトー
ル、マンニトール、キシリトール、ペンタエリスリトー
ル、ジペンタエリスリトール、トリメチロールプロパ
ン、ポリエチレングリコール、ポリビニルアルコールな
ど。
Glycerin, diglycerin, sorbitol, mannitol, xylitol, pentaerythritol, dipentaerythritol, trimethylolpropane, polyethylene glycol, polyvinyl alcohol and the like.

【0048】上記化合物の含窒素または含硫黄あるいは
金属錯体。 (f)β−ジケト化合物またはこれらの誘導体。 アセト酢酸エステル、デヒドロ酢酸、アセチルアセト
ン、ベンゾイルアセトン、トリフルオロアセチルアセト
ン、ステアロイルベンゾイルメタン、ジベンジルメタ
ン。
Nitrogen-containing or sulfur-containing or metal complexes of the above compounds. (F) β-diketo compounds or derivatives thereof. Acetoacetate, dehydroacetic acid, acetylacetone, benzoylacetone, trifluoroacetylacetone, stearoylbenzoylmethane, dibenzylmethane.

【0049】上記化合物の金属錯体。 (g)ホスファイト類 トリフェニルホスフィン、ジフェニル亜ホスフィン、酸
フェニル、水添ビスフェノールAホスファイトポリマ
ー、
Metal complexes of the above compounds. (G) phosphites triphenylphosphine, diphenylphosphine, phenyl acid, hydrogenated bisphenol A phosphite polymer,

【0050】[0050]

【化1】 Embedded image

【0051】(式中、RはCn2n+1である。)(Where R is C n H 2n + 1 )

【0052】[0052]

【化2】 Embedded image

【0053】(式中、RはCn2n+1である。)エキス
パンディング剤は、粘着剤層3中に0〜10重量%、特
には0〜5重量%の範囲の量で用いられることが好まし
い。
(Where R is C n H 2n + 1 ). The expanding agent is used in the pressure-sensitive adhesive layer 3 in an amount of 0 to 10% by weight, particularly 0 to 5% by weight. Is preferred.

【0054】さらに上記の放射線硬化型粘着剤層3中に
帯電防止剤を添加することもできる。帯電防止剤を添加
することにより、エキパンド時あるいはピックアップ時
に発生する静電気を抑制できるため、チップの信頼性が
向上する。帯電防止剤としては、具体的には、アニオン
性、カチオン性、非イオン性、ないし両イオン性の一般
に公知の活性剤、カーボンブラック、銀、ニッケル、ア
ンチモンドープスズ酸化物、スズドープインジウム酸化
物などの粉体等が用いられる。帯電防止剤は、粘着剤層
3中に0〜50重量%、特には0〜30重量部の範囲の
量で用いられることが好ましい。
Further, an antistatic agent may be added to the radiation-curable pressure-sensitive adhesive layer 3. By adding an antistatic agent, static electricity generated at the time of expansion or at the time of pickup can be suppressed, so that the reliability of the chip is improved. As the antistatic agent, specifically, anionic, cationic, nonionic, or zwitterionic generally known activator, carbon black, silver, nickel, antimony-doped tin oxide, tin-doped indium oxide And the like. The antistatic agent is preferably used in the adhesive layer 3 in an amount of 0 to 50% by weight, particularly 0 to 30% by weight.

【0055】また上記の粘着剤中に、イソシアナート系
硬化剤を混合することにより、初期の接着力を任意の値
に設定することができる。このような硬化剤としては、
具体的には多価イソシアネート化合物、たとえば2,4
−トリレンジイソシアネート、2,6−トリレンジイソ
シアネート、1,3−キシリレンジイソシアネート、
1,4−キシレンジイソシアネート、ジフェニルメタン
−4,4’−ジイソシアネート、ジフェニルメタン−
2,4’−ジイソシアネート、3−メチルジフェニルメ
タンジイソシアネート、ヘキサメチレンジイソシアネー
ト、イソホロンジイソシアネート、ジシクロヘキシルメ
タン−4,4’−ジイソシアネート、ジシクロヘキシル
メタン−2,4’−ジイソシアネート、リジンイソシア
ネートなどが用いられる。硬化剤は、粘着剤100重量
部に対して0〜50重量部、特には0〜20重量部の範
囲の量で用いられることが好ましい。
By mixing an isocyanate-based curing agent in the above-mentioned pressure-sensitive adhesive, the initial adhesive strength can be set to an arbitrary value. As such a curing agent,
Specifically, a polyvalent isocyanate compound such as 2,4
-Tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate,
1,4-xylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-
2,4′-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4′-diisocyanate, dicyclohexylmethane-2,4′-diisocyanate, lysine isocyanate and the like are used. The curing agent is preferably used in an amount of 0 to 50 parts by weight, particularly 0 to 20 parts by weight based on 100 parts by weight of the adhesive.

【0056】さらに本発明では、基材中に砥粒が分散さ
れていてもよい。この砥粒は、粒径が0.5〜100μ
m、好ましくは1〜50μmであって、モース硬度は6
〜10、好ましくは7〜10である。具体的には、グリ
ーンカーボランダム、人造コランダム、オプティカルエ
メリー、ホワイトアランダム、炭化ホウ素、酸化クロム
(III)、酸化セリウム、ダイヤモンドパウダーなどが用
いられる。このような砥粒は無色あるいは白色であるこ
とが好ましい。このような砥粒は、基材2中に0.5〜
70重量%、好ましくは5〜50重量%の量で存在して
いる。このような砥粒は、切断ブレードをウェハのみな
らず基材2にまでも切り込むような深さで用いる場合
に、特に好ましく用いられる。
Further, in the present invention, abrasive grains may be dispersed in the base material. This abrasive has a particle size of 0.5 to 100 μm.
m, preferably 1 to 50 μm, and a Mohs hardness of 6
-10, preferably 7-10. Specifically, green carborundum, artificial corundum, optical emery, white alundum, boron carbide, chromium oxide
(III), cerium oxide, diamond powder and the like are used. Such abrasive grains are preferably colorless or white. Such abrasive grains are contained in the base material 2 in an amount of 0.5 to
It is present in an amount of 70% by weight, preferably 5 to 50% by weight. Such abrasive grains are particularly preferably used when the cutting blade is used at such a depth as to cut not only into the wafer but also into the substrate 2.

【0057】上記のような砥粒を基材中に含ませること
によって、切断ブレードが基材中に切り込んできて、切
断ブレードに粘着剤が付着しても砥粒の研磨効果によ
り、目づまりを簡単に除去することができる。
By including the above abrasive grains in the base material, the cutting blade cuts into the base material, and even if the adhesive adheres to the cutting blade, the clogging is easily performed by the polishing effect of the abrasive grains. Can be removed.

【0058】本発明に係るウェハ貼着用粘着シートは、
上記の基材2、放射線硬化型粘着剤層3およびダイ接着
用接着剤層4からなる。層4を構成するダイ接着用接着
剤としては具体的には、エチレン・酢酸ビニル共重合
体、エチレン・アクリル酸エステル共重合体、ポリアミ
ド、ポリエチレン、ポリスルホン等の熱可塑性樹脂、エ
ポキシ樹脂、ポリイミド樹脂、シリコーン樹脂、フェノ
ール樹脂等の熱硬化性樹脂、あるいは、アクリル樹脂、
ゴム系ポリマー、フッ素ゴム系ポリマー、フッ素樹脂等
の接着剤が用いられる。またこれらの2種以上の混合物
であってもよい。
The pressure-sensitive adhesive sheet for attaching a wafer according to the present invention comprises:
It is composed of the above-mentioned base material 2, radiation-curable pressure-sensitive adhesive layer 3, and die-bonding adhesive layer 4. Specific examples of the die bonding adhesive constituting the layer 4 include thermoplastic resins such as ethylene-vinyl acetate copolymer, ethylene-acrylate copolymer, polyamide, polyethylene, and polysulfone, epoxy resins, and polyimide resins. , Silicone resin, thermosetting resin such as phenolic resin, or acrylic resin,
Adhesives such as rubber-based polymers, fluororubber-based polymers, and fluororesins are used. Also, a mixture of two or more of these may be used.

【0059】ダイ接着用接着剤層4の膜厚は、通常は3
〜100μm程度であり、好ましくは10〜60μm程
度である。さらに、ダイ接着用接着剤層4には、導電性
の付与を目的として、金、銀、銅、ニッケル、アルミニ
ウム、ステンレス、カーボン、またはセラミック、ある
いはニッケル、アルミニウム等を銀で被覆したもののよ
うな導電性フィラーを添加してもよく、また熱伝導性の
付与を目的として、金、銀、銅、ニッケル、アルミニウ
ム、ステンレス、シリコン、ゲルマニウム等の金属材料
やそれらの合金等の熱伝導性物質を添加してもよい。こ
れらの添加剤は、ダイ接着用接着剤100重量部に対し
て、10〜400重量部程度の割合で配合されていても
よい。
The thickness of the die bonding adhesive layer 4 is usually 3
100100 μm, preferably about 10-60 μm. Further, the die bonding adhesive layer 4 may be made of gold, silver, copper, nickel, aluminum, stainless steel, carbon, or ceramic, or nickel, aluminum or the like coated with silver for the purpose of imparting conductivity. A conductive filler may be added, and for the purpose of providing thermal conductivity, a heat conductive substance such as a metal material such as gold, silver, copper, nickel, aluminum, stainless steel, silicon, or germanium, or an alloy thereof is used. It may be added. These additives may be blended in an amount of about 10 to 400 parts by weight based on 100 parts by weight of the die bonding adhesive.

【0060】以上、説明したような構成のウェハ貼着用
粘着シートに放射線を照射すると、放射線照射後には粘
着力は大きく低下し、容易にウェハチップを該粘着シー
トからピックアップすることができる。またある程度の
弾性率が維持されるため、エキスパンディング工程にお
いて、所望のチップ間隔を得ることが容易になり、かつ
チップ体のズレ等も発生せず、ピックアップを安定して
行えるようになる。
When the pressure-sensitive adhesive sheet for attaching a wafer having the structure described above is irradiated with radiation, the adhesive force is greatly reduced after the irradiation, and the wafer chips can be easily picked up from the pressure-sensitive adhesive sheet. In addition, since a certain degree of elasticity is maintained, it is easy to obtain a desired chip interval in the expanding step, and the chip can be stably picked up without any deviation of the chip body.

【0061】本発明に係るウェハ貼着用粘着シートに
は、その使用前には前記ダイ接着用接着剤層4を保護す
るため、図2に示すようにダイ接着用接着剤層4の上面
に剥離性シート5を仮粘着しておくことが好ましい。こ
の剥離性シート5としては、従来公知のものが特に限定
されることなく用いられる。
Before the adhesive sheet for attaching a wafer according to the present invention is used, in order to protect the adhesive layer 4 for die bonding before its use, the adhesive sheet 4 is peeled off from the upper surface of the adhesive layer 4 for die bonding as shown in FIG. It is preferable that the conductive sheet 5 is temporarily adhered. As the releasable sheet 5, a conventionally known sheet is used without any particular limitation.

【0062】以下本発明に係る粘着シートの使用方法に
ついて説明する。本発明に係る粘着シート1の上面に剥
離性シート5が設けられている場合には、該シート5を
除去し、次いで粘着シート1のダイ接着用接着剤層4を
上向きにして載置し、図3に示すようにして、このダイ
接着用接着剤層4の上面にダイシング加工すべき半導体
ウェハAを貼着する。この貼着状態でウェハAにダイシ
ング、洗浄、乾燥の諸工程が加えられる。この際、ダイ
接着用接着剤層4によりウェハチップは粘着シートに充
分に接着保持されているので、上記各工程の間にウェハ
チップが脱落することはない。この時点における放射線
硬化型粘着剤層3とダイ接着用接着剤層4との接着力
は、1〜1000g/25mm程度であり、好ましくは1〜
500g/25mm程度である。他方、ダイ接着用接着剤4
とウェハチップとの接着力は、50〜2000g/25mm
程度であり、好ましくは100〜1000g/25mm程度
であるので、ウェハチップとウェハ貼着用粘着シート1
とは一体化しており、上記の諸工程中に、ウェハチップ
が脱落することはない。
Hereinafter, a method for using the pressure-sensitive adhesive sheet according to the present invention will be described. When the peelable sheet 5 is provided on the upper surface of the pressure-sensitive adhesive sheet 1 according to the present invention, the sheet 5 is removed, and then the pressure-sensitive adhesive sheet 1 is placed with the die bonding adhesive layer 4 facing upward, As shown in FIG. 3, a semiconductor wafer A to be diced is attached to the upper surface of the die bonding adhesive layer 4. Various processes of dicing, cleaning, and drying are added to the wafer A in this state of attachment. At this time, the wafer chips are sufficiently adhered and held on the pressure-sensitive adhesive sheet by the die bonding adhesive layer 4, so that the wafer chips do not fall off during each of the above steps. At this point, the adhesive strength between the radiation-curable pressure-sensitive adhesive layer 3 and the die-bonding adhesive layer 4 is about 1 to 1000 g / 25 mm, preferably 1 to 1000 g / 25 mm.
It is about 500 g / 25 mm. On the other hand, die bonding adhesive 4
Adhesive strength between wafer and wafer chip is 50-2000g / 25mm
, And preferably about 100 to 1000 g / 25 mm.
And the wafer chips do not fall off during the above steps.

【0063】次に、図5に示すように、紫外線(UV)
あるいは電子線(EB)などの放射線Bを粘着シート1
の放射線硬化型粘着剤層3に照射し、放射線硬化型粘着
剤層3中に含まれる放射線重合性オリゴマーを重合硬化
せしめる。放射線照射量は、20〜500mW/cm2 程度
であり、照射時間は0.1〜150秒程度である。この
時点における放射線硬化型粘着剤層3とダイ接着用接着
剤層4との接着力は、1〜500g/25mm程度であり、
好ましくは1〜100g/25mm程度である。他方、ダイ
接着用接着剤4とウェハチップとの接着力は、50〜4
000g/25mm程度であり、好ましくは100〜300
0g/25mm程度である。この結果、放射線硬化型粘着剤
層3とダイ接着用接着剤層4との間の粘着力は、チップ
をピックアップできる程度に減少し、かつ放射線硬化型
粘着剤層4自体がある程度の弾性率が維持するため、エ
キスパンドにより容易に所望のチップ間隔が得られる
(図6参照)。
Next, as shown in FIG.
Alternatively, the radiation sheet B such as an electron beam (EB) is applied to the adhesive sheet 1.
To the radiation-curable pressure-sensitive adhesive layer 3 to polymerize and cure the radiation-polymerizable oligomer contained in the radiation-curable pressure-sensitive adhesive layer 3. The radiation dose is about 20 to 500 mW / cm 2 , and the irradiation time is about 0.1 to 150 seconds. At this time, the adhesive strength between the radiation-curable pressure-sensitive adhesive layer 3 and the die-bonding adhesive layer 4 is about 1 to 500 g / 25 mm,
Preferably it is about 1 to 100 g / 25 mm. On the other hand, the adhesive strength between the die bonding adhesive 4 and the wafer chip is 50 to 4
000g / 25mm, preferably 100-300
It is about 0 g / 25 mm. As a result, the adhesive force between the radiation-curable pressure-sensitive adhesive layer 3 and the die-bonding adhesive layer 4 is reduced to such an extent that a chip can be picked up, and the radiation-curable pressure-sensitive adhesive layer 4 itself has a certain elastic modulus. To maintain, the desired chip spacing is easily obtained by expansion (see FIG. 6).

【0064】粘着シート1への放射線照射は、基材2の
放射線硬化型粘着剤層3が設けられていない面から行な
う。したがって前述のように、放射線としてUVを用い
る場合には基材2は光透過性であることが必要である
が、放射線としてEBを用いる場合には基材2は必ずし
も光透過性である必要はない。
The irradiation of the pressure-sensitive adhesive sheet 1 is performed from the surface of the substrate 2 on which the radiation-curable pressure-sensitive adhesive layer 3 is not provided. Therefore, as described above, when UV is used as the radiation, the substrate 2 needs to be light-transmitting, but when EB is used as the radiation, the substrate 2 does not necessarily need to be light-transmitting. Absent.

【0065】エキスパンディング工程の後、図7に示す
ように、基材2の下面から突き上げ針扞6によりピック
アップすべきチップA1、A2……A4を突き上げ、この
チップA1……をたとえば吸引コレット7によりピック
アップする。チップA1とダイ接着用接着剤層4との間
の粘着力は、ダイ接着用接着剤層4と放射線硬化型粘着
剤層3との間の粘着力よりも大きいため、チップA1
ピックアップを行うと、ダイ接着用接着剤層4はチップ
1の下面に付着した状態で剥離する(図8参照)。次
いで、チップをダイ接着用接着剤4を介してリードフレ
ーム8に載置し加熱する。加熱温度は、通常100〜3
00℃、好ましくは150〜250℃程度であり、加熱
時間は、0.5〜120分間、好ましくは1〜30分間
程度である。加熱によりダイ接着用接着剤は再び接着力
を発現し、チップとリードフレームとの接着が完了する
(図9参照)。
After the expanding step, as shown in FIG. 7, the chips A 1 , A 2 ... A 4 to be picked up by the push-up needle rod 6 are pushed up from the lower surface of the substrate 2, and the chips A 1 . For example, it is picked up by the suction collet 7. Adhesion between the chip A 1 and the die bonding adhesive layer 4 is larger than the adhesive force between the die bonding adhesive layer 4 and the radiation curable adhesive layer 3, the pickup of the chip A 1 Doing, die bonding adhesive layer 4 is peeled in a state of adhering to the lower surface of the chip a 1 (see FIG. 8). Next, the chip is placed on the lead frame 8 via the die bonding adhesive 4 and heated. The heating temperature is usually 100 to 3
The temperature is about 00 ° C, preferably about 150 to 250 ° C, and the heating time is about 0.5 to 120 minutes, preferably about 1 to 30 minutes. By heating, the die bonding adhesive develops adhesive strength again, and the bonding between the chip and the lead frame is completed (see FIG. 9).

【0066】このようにしてウェハチップA1,A2……
のピックアップを行なうと、充分なチップ間隔が得られ
ているので簡単にチップをピックアップすることがで
き、しかも放射線硬化型粘着剤の粘着力は充分に低下し
ているので、放射線硬化型粘着剤による汚染のない良好
な品質のチップが得られる。また、ダイ接着用接着剤を
塗布する工程が省略されるため、プロセス上も極めて有
利である。
In this manner, the wafer chips A 1 , A 2 ...
When picking up, the chips can be easily picked up because a sufficient chip spacing is obtained, and the adhesive strength of the radiation-curable adhesive is sufficiently reduced. Good quality chips without contamination are obtained. Further, since the step of applying the die bonding adhesive is omitted, the process is very advantageous.

【0067】図10には上記の放射線照射方法の変形例
を示すが、この場合には、突き上げ針扞6の内部を中空
とし、その中空部に放射線発生源9を設けて放射線照射
とピックアップとを同時に行えるようにしており、この
ようにすると装置を簡単化できると同時にピックアップ
操作時間を短縮することができる。
FIG. 10 shows a modification of the above-described radiation irradiation method. In this case, the inside of the push-up needle rod 6 is made hollow, and a radiation generation source 9 is provided in the hollow part to perform radiation irradiation and pickup. Can be performed at the same time, so that the apparatus can be simplified and the pickup operation time can be shortened.

【0068】[0068]

【発明の効果】以上説明してきたように、本発明に係る
ウェハ貼着用粘着シートによれば、放射線照射後には、
放射線硬化型粘着剤層のの粘着力が大きく低下し、容易
にウェハチップとダイ接着用接着剤とを該粘着シートか
らピックアップすることができる。またある程度の弾性
率が維持されるため、エキスパンディング工程におい
て、所望のチップ間隔を得ることが容易になり、かつチ
ップ体のズレ等も発生せず、ピックアップを安定して行
えるようになる。しかもチップをリードフレームに接着
する際に、ダイ接着用接着剤をチップ裏面に塗布する工
程を省略できるため、プロセス上も極めて有利である。
As described above, according to the pressure-sensitive adhesive sheet for attaching a wafer according to the present invention, after irradiation,
The adhesive force of the radiation-curable pressure-sensitive adhesive layer is greatly reduced, and the wafer chip and the die bonding adhesive can be easily picked up from the pressure-sensitive adhesive sheet. In addition, since a certain degree of elasticity is maintained, it is easy to obtain a desired chip interval in the expanding step, and the chip can be stably picked up without any deviation of the chip body. In addition, when the chip is bonded to the lead frame, the step of applying the die bonding adhesive to the back surface of the chip can be omitted, which is extremely advantageous in terms of the process.

【0069】[0069]

【実施例】以下本発明を実施例により説明するが、本発
明はこれら実施例に限定されるものではない。
EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples.

【0070】なお、以下の実施例および比較例におい
て、「貯蔵弾性率」、「分散粒径」、「整列性(エキス
パンド時)」および「整列性(ピックアップ時)」は次
のようにして評価した。貯蔵弾性率 実施例および比較例によって得られる放射線硬化型粘着
剤を80W/cmの高圧水銀灯下に置き、1秒間放射線を
照射する。これを円柱状に貼り合わせ、底面φ8mm、高
さ5mmとし、これを粘弾性測定に供した。放射線硬化後
の試料の貯蔵弾性率は、レオメトリックス(製)RDS
−IIを用いて剪断法により測定された。測定条件は、2
3℃、500rad/秒である。分散粒径 実施例および比較例によって得られる粘着シートの粘着
剤層を80W/cmの高圧水銀灯下に置き、1秒間放射線
を照射し、硬化後の粘着剤層表面を600倍の顕微鏡で
観察して、顕微鏡内のスケールにて硬化部分の粒径を実
測することで「分散粒径」を決定した。整列性(エキスパンド時) 実施例および比較例によって得られる粘着シートにシリ
コンウエハを貼付した後、10mm×10mmにダイシング
し、その後、粘着剤層に紫外線を空冷式高圧水銀灯(8
0W/cm、照射距離10cm)により照射した。次にエキ
スパンディング治具(ヒューグル社製 HS−101
0)にて10mmエキスパンドし、ピックアップ力、チッ
プ間隔を測定し、同時にチップの配列を目視により判定
した。整列性(ピックアップ時) 上記の操作の後、ダイボンダー装置(新川社製 PA−
10)によるピックアップ試験を行った。ピックアップ
を試みたチップ100個の内、幾つをピックアップでき
たかで評価した。
In the following Examples and Comparative Examples, “storage modulus”, “dispersion particle size”, “alignment (at the time of expansion)” and “alignment (at the time of pickup)” were evaluated as follows. did. Storage Elasticity The radiation-curable pressure-sensitive adhesives obtained in Examples and Comparative Examples are placed under a high-pressure mercury lamp of 80 W / cm and irradiated with radiation for 1 second. This was adhered in a cylindrical shape to make the bottom surface φ8 mm and the height 5 mm, and this was subjected to viscoelasticity measurement. The storage elastic modulus of the sample after radiation curing was determined by Rheometrics (manufactured by RDS).
-II was measured by the shear method. Measurement conditions are 2
3 ° C., 500 rad / sec. Dispersion Particle Size The pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet obtained in each of Examples and Comparative Examples was placed under a high-pressure mercury lamp of 80 W / cm, irradiated with radiation for 1 second, and the surface of the pressure-sensitive adhesive layer after curing was observed with a microscope of 600 times. The “dispersed particle size” was determined by actually measuring the particle size of the cured portion on a scale in a microscope. Alignment (at the time of expansion) A silicon wafer was attached to the pressure-sensitive adhesive sheet obtained in each of Examples and Comparative Examples, and then diced to 10 mm × 10 mm.
(0 W / cm, irradiation distance 10 cm). Next, an expanding jig (HS-101 manufactured by Hugle)
At 0), the pickup was expanded by 10 mm, the pickup force and the chip interval were measured, and at the same time, the arrangement of the chips was visually determined. Alignment (at the time of pickup) After the above operation, a die bonder (PA-
A pickup test according to 10) was performed. An evaluation was made based on how many of the 100 chips that had been picked up were picked up.

【0071】[0071]

【実施例1】 「放射線硬化型粘着剤の調製」アクリル系粘着剤(アク
リル系共重合体 ブチルアクリレート:2−ヒドロキシ
エチルメタアクリレート:メタアクリル酸ジメチルアミ
ノエステル=85:10:5)100重量部と、分子量
約7000のウレタンアクリレート系オリゴマー110
重量部と、硬化剤(芳香族イソシアナート系)5重量部
と、UV硬化開始剤(ベンゾフェノン系)4重量部を混
合して放射線硬化型粘着剤を調製した。
Example 1 "Preparation of radiation-curable pressure-sensitive adhesive" 100 parts by weight of acrylic pressure-sensitive adhesive (acrylic copolymer butyl acrylate: 2-hydroxyethyl methacrylate: dimethylamino methacrylate = 85: 10: 5) And a urethane acrylate oligomer 110 having a molecular weight of about 7,000
A radiation-curable pressure-sensitive adhesive was prepared by mixing 5 parts by weight of a curing agent (aromatic isocyanate-based) and 4 parts by weight of a UV curing initiator (benzophenone-based).

【0072】この放射線硬化型粘着剤を用いて、「貯蔵
弾性率」を評価した。結果を表1に示す。 「ウェハ貼着用粘着シートの作製」厚さ80μmのエチ
レン・メタクリル酸共重合体フィルム上に、上記の放射
線硬化型粘着剤を厚さ10μmとなるように塗布し、さ
らにその上にダイ接着用接着剤(銀フィラーを含有する
エポキシ樹脂系接着剤)を厚さ30μmとなるように塗
布してウェハ貼着用粘着シートを作製した。
Using this radiation-curable pressure-sensitive adhesive, the "storage modulus" was evaluated. Table 1 shows the results. "Preparation of pressure-sensitive adhesive sheet for attaching wafer" The above-mentioned radiation-curable pressure-sensitive adhesive is applied to an 80 μm-thick ethylene / methacrylic acid copolymer film so as to have a thickness of 10 μm, and then a die-bonding adhesive is applied thereon An agent (an epoxy resin-based adhesive containing a silver filler) was applied so as to have a thickness of 30 μm to prepare a pressure-sensitive adhesive sheet for attaching a wafer.

【0073】得られたウェハ貼着用粘着シートを用い
て、「分散粒径」、「整列性(エキスパンド時)」およ
び「整列性(ピックアップ時)」の評価を行った。結果
を表1に示す。
Using the obtained pressure-sensitive adhesive sheet for attaching a wafer, "dispersion particle size", "alignment (at the time of expansion)" and "alignment (at the time of pickup)" were evaluated. Table 1 shows the results.

【0074】[0074]

【比較例】実施例1において、アクリル系粘着剤とし
て、ブチルアクリレート・アクリル酸共重合体(ブチル
アクリレート:アクリル酸(モル比)=90:10)を
用い、分子量約2000のウレタンアクリレート系オリ
ゴマーを用いた以外は、実施例1と同様の操作を行っ
た。
Comparative Example In Example 1, a butyl acrylate / acrylic acid copolymer (butyl acrylate: acrylic acid (molar ratio) = 90: 10) was used as the acrylic pressure-sensitive adhesive, and a urethane acrylate oligomer having a molecular weight of about 2,000 was used. The same operation as in Example 1 was performed except for using.

【0075】結果を表1に示す。Table 1 shows the results.

【0076】[0076]

【表1】 [Table 1]

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る粘着シートの断面図である。FIG. 1 is a sectional view of a pressure-sensitive adhesive sheet according to the present invention.

【図2】本発明に係る粘着シートの断面図である。FIG. 2 is a cross-sectional view of the pressure-sensitive adhesive sheet according to the present invention.

【図3】本発明に係る粘着シートにウェハを貼着した状
態を示す。
FIG. 3 shows a state in which a wafer is attached to an adhesive sheet according to the present invention.

【図4】本発明に係る粘着シートを半導体ウェハのダイ
シング工程に用いた場合の説明図である。
FIG. 4 is an explanatory view in a case where the pressure-sensitive adhesive sheet according to the present invention is used in a dicing process of a semiconductor wafer.

【図5】図4に示す工程の後、ウェハ貼着用粘着シート
に、裏面から放射線を照射した状態を示す。
FIG. 5 shows a state in which the pressure-sensitive adhesive sheet to be attached to the wafer is irradiated with radiation from the back surface after the step shown in FIG. 4;

【図6】図5に示す工程の後、ウェハ貼着用粘着シート
をエキスパンドした状態を示す。
FIG. 6 shows a state where the pressure-sensitive adhesive sheet for attaching a wafer is expanded after the step shown in FIG. 5;

【図7】図6に示す工程の後、チップをピックアップす
る工程を示す。
FIG. 7 shows a step of picking up a chip after the step shown in FIG. 6;

【図8】ピックアップされたチップとダイ接着用接着剤
を示す。
FIG. 8 shows a picked-up chip and a die bonding adhesive.

【図9】チップをリードフレームにボンディングした状
態を示す。
FIG. 9 shows a state where the chip is bonded to a lead frame.

【図10】図5に示した放射線照射方法の一変形例を示
す。
FIG. 10 shows a modification of the radiation irradiation method shown in FIG.

【符号の説明】 1…粘着シート 2…基材 3…放射線硬化型粘着剤層 4…ダイ接着用接着剤層 5…剥離性シート 6…突き上げ針扞 7…吸引コレット 8…リードフレーム 9…放射線発生源 A…ウェハ B…放射線[Description of Signs] 1 ... Adhesive sheet 2 ... Substrate 3 ... Radiation-curable pressure-sensitive adhesive layer 4 ... Die-adhesive layer 5 ... Releasable sheet 6 ... Push-up needle rod 7 ... Suction collet 8 ... Lead frame 9 ... Radiation Source A: Wafer B: Radiation

フロントページの続き (56)参考文献 特開 平5−36826(JP,A) 特開 平5−179211(JP,A) 特開 平4−188847(JP,A) 特開 平7−86212(JP,A) 特開 平2−305808(JP,A) 特開 昭63−193981(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01L 21/301 Continuation of the front page (56) References JP-A-5-36826 (JP, A) JP-A-5-179211 (JP, A) JP-A-4-188847 (JP, A) JP-A-7-86212 (JP) JP-A-2-305808 (JP, A) JP-A-63-193981 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/301

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基材面上に、粘着剤と放射線重合性オリ
ゴマーとからなる放射線硬化型粘着剤層と、ダイ接着用
接着剤層とがこの順に形成されてなるウェハ貼着用粘着
シートにおいて、該放射線硬化型粘着剤層中において、該放射線重合性オ
リゴマーが、1〜30μmの分散粒径を有し、かつ均一
に分散されてなり、 該放射線硬化型粘着剤層の放射線硬化後における弾性率
が1×106(dynes/cm2)〜1×108(dynes/cm2)である
ことを特徴とするウェハ貼着用粘着シート。
A pressure-sensitive adhesive sheet for attaching a wafer, comprising a radiation-curable pressure-sensitive adhesive layer comprising a pressure-sensitive adhesive and a radiation-polymerizable oligomer, and a die-bonding adhesive layer formed in this order on a substrate surface, In the radiation-curable pressure-sensitive adhesive layer, the radiation-polymerizable
Rigomer has a dispersed particle size of 1 to 30 μm and is uniform
The radiation-curable pressure-sensitive adhesive layer has a modulus of elasticity after radiation curing of 1 × 10 6 (dynes / cm 2 ) to 1 × 10 8 (dynes / cm 2 ). Adhesive sheet for sticking.
JP18470493A 1993-07-27 1993-07-27 Adhesive sheet for attaching wafer Ceased JP3348923B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18470493A JP3348923B2 (en) 1993-07-27 1993-07-27 Adhesive sheet for attaching wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18470493A JP3348923B2 (en) 1993-07-27 1993-07-27 Adhesive sheet for attaching wafer

Publications (2)

Publication Number Publication Date
JPH0745557A JPH0745557A (en) 1995-02-14
JP3348923B2 true JP3348923B2 (en) 2002-11-20

Family

ID=16157916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18470493A Ceased JP3348923B2 (en) 1993-07-27 1993-07-27 Adhesive sheet for attaching wafer

Country Status (1)

Country Link
JP (1) JP3348923B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8465615B2 (en) 2004-10-14 2013-06-18 Hitachi Chemical Company, Ltd. Adhesive sheet and method for manufacturing the same, semiconductor device manufacturing method and semiconductor device
US9327418B2 (en) 2011-09-16 2016-05-03 Hitachi Chemical Company, Ltd. Adhesive film
CN105793035A (en) * 2014-03-26 2016-07-20 琳得科株式会社 Laminate for resin film formation sheet

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3383227B2 (en) * 1998-11-06 2003-03-04 リンテック株式会社 Semiconductor wafer backside grinding method
JP4634680B2 (en) * 1999-07-08 2011-02-16 ソマール株式会社 Easily peelable adhesive film
JP2002026574A (en) * 2000-07-06 2002-01-25 Fujitsu Ltd Conductive sheet-like article, and method of protecting electronic device or electronic element using the same
US6759121B2 (en) 2000-07-13 2004-07-06 3M Innovative Properties Company Clear adhesive sheet
US6472065B1 (en) * 2000-07-13 2002-10-29 3M Innovative Properties Company Clear adhesive sheet
JP2002256235A (en) * 2001-03-01 2002-09-11 Hitachi Chem Co Ltd Adhesive sheet, method for producing semiconductor device and semiconductor device
JP2002256237A (en) * 2001-03-01 2002-09-11 Hitachi Chem Co Ltd Adhesive sheet, method for producing semiconductor device and semiconductor device
JP2002256236A (en) * 2001-03-01 2002-09-11 Hitachi Chem Co Ltd Adhesive sheet, method for producing semiconductor device and semiconductor device
KR100412020B1 (en) * 2001-03-12 2003-12-24 박광민 An Adhesive Tape for Semiconductor
JP4107417B2 (en) 2002-10-15 2008-06-25 日東電工株式会社 Tip workpiece fixing method
WO2004069951A1 (en) * 2003-02-05 2004-08-19 The Furukawa Electric Co., Ltd. Pressure-sensitive adhesive tape for pasting wafer thereto
JP3933118B2 (en) * 2003-10-02 2007-06-20 ソニー株式会社 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
JP2005162818A (en) * 2003-12-01 2005-06-23 Hitachi Chem Co Ltd Dicing die bond sheet
JP4536367B2 (en) * 2003-12-24 2010-09-01 東レ・ダウコーニング株式会社 Sheet for dicing die bonding and manufacturing method thereof
JP5027460B2 (en) * 2006-07-28 2012-09-19 東京応化工業株式会社 Wafer bonding method, thinning method, and peeling method
KR100943799B1 (en) * 2006-09-12 2010-02-23 닛토덴코 가부시키가이샤 Dicing/die bonding film
JP5101111B2 (en) * 2007-01-05 2012-12-19 日東電工株式会社 Adhesive sheet for semiconductor substrate processing
JP5181324B2 (en) * 2007-07-03 2013-04-10 山栄化学株式会社 Method for applying adhesive to member, method for bonding member to other member, and adhesives thereof
KR100910672B1 (en) * 2007-08-03 2009-08-04 도레이새한 주식회사 Heat-resistant adhesive sheet
WO2009050785A1 (en) * 2007-10-16 2009-04-23 Denki Kagaku Kogyo Kabushiki Kaisha Pressure-sensitive adhesive, pressure-sensitive adhesive sheet, multilayered pressure-sensitive adhesive sheet, and process for producing electronic part
JP2009124120A (en) * 2007-10-22 2009-06-04 Hitachi Chem Co Ltd Method and apparatus for evaluating pick-up successfulness
KR101047923B1 (en) * 2007-12-27 2011-07-08 주식회사 엘지화학 Dicing die bonding film and semiconductor device with excellent burr characteristics and reliability
JP5144567B2 (en) * 2009-03-18 2013-02-13 古河電気工業株式会社 Wafer processing tape
CN102471648B (en) 2009-07-14 2014-02-12 日立化成株式会社 Adhesive sheet and method for manufacturing adhesive sheets
JP2010219559A (en) * 2010-06-21 2010-09-30 Nitto Denko Corp Dicing/die-bonding film
JP5710897B2 (en) * 2010-06-22 2015-04-30 株式会社タムラ製作所 Reflective sheet having a reflective coating of a curable resin composition
JP2013213075A (en) * 2012-03-30 2013-10-17 Sekisui Chem Co Ltd Semiconductor processing adhesive tape
JP5894035B2 (en) * 2012-08-15 2016-03-23 日立化成株式会社 Manufacturing method of semiconductor device
JP6334197B2 (en) * 2014-02-25 2018-05-30 リンテック株式会社 Composite sheet for forming protective film, chip with protective film, and method for manufacturing chip with protective film
US20170213765A1 (en) 2014-05-23 2017-07-27 Hitachi Chemical Company, Ltd. Die bonding/dicing sheet
WO2022254097A1 (en) * 2021-06-04 2022-12-08 Upm Raflatac Oy Adhesive label

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8465615B2 (en) 2004-10-14 2013-06-18 Hitachi Chemical Company, Ltd. Adhesive sheet and method for manufacturing the same, semiconductor device manufacturing method and semiconductor device
US9327418B2 (en) 2011-09-16 2016-05-03 Hitachi Chemical Company, Ltd. Adhesive film
CN105793035A (en) * 2014-03-26 2016-07-20 琳得科株式会社 Laminate for resin film formation sheet
CN105793035B (en) * 2014-03-26 2018-05-15 琳得科株式会社 Resin film forms and uses thin slice layered product

Also Published As

Publication number Publication date
JPH0745557A (en) 1995-02-14

Similar Documents

Publication Publication Date Title
JP3348923B2 (en) Adhesive sheet for attaching wafer
JP2984549B2 (en) Energy ray-curable pressure-sensitive adhesive composition and method of using the same
JP2601956B2 (en) Removable adhesive polymer
JP2002226796A (en) Pressure-sensitive adhesive sheet for sticking wafer and semiconductor device
JP3506519B2 (en) Adhesive tape and method of using the same
EP0622833B1 (en) Adhesive sheet for wafer and process for preparing semiconductor apparatus using the same
JP4804921B2 (en) Adhesive sheet, semiconductor wafer surface protection method and workpiece processing method
JP3383227B2 (en) Semiconductor wafer backside grinding method
JP3739488B2 (en) Adhesive tape and method of using the same
JP2726350B2 (en) Adhesive sheet for attaching wafer
JP2002158276A (en) Adhesive sheet for sticking wafer and semiconductor device
JP4219605B2 (en) Adhesive sheet for semiconductor wafer processing and method of using the same
KR20100105428A (en) Method of processing adhesive sheet and semiconductor wafer, method of manufacturing semiconductor chip
JP3299601B2 (en) Adhesive sheet for attaching wafer
JP2004331743A (en) Pressure-sensitive adhesive sheet and method for using the same
JP3909907B2 (en) Adhesive sheets for semiconductor wafer processing and processing methods
JP2003129011A (en) Adhesive sheet for working semiconductor wafer
JP3073239B2 (en) Adhesive sheet for attaching wafer
JP2728333B2 (en) Adhesive sheet for attaching wafer and chip pick-up method
JP2545170B2 (en) Wafer sticking adhesive sheet and wafer dicing method
JPH09153471A (en) Adhesive film for dicing semiconductor wafer and use thereof
JPH0224872B2 (en)
JP3060417B2 (en) Adhesive sheet for attaching wafer
JPH0258306B2 (en)
JP3209544B2 (en) Adhesive sheet for attaching wafer

Legal Events

Date Code Title Description
RVOP Cancellation by post-grant opposition