JP3346901B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a plurality of semiconductor elements.

[0002]

2. Description of the Related Art Conventionally, for example, among semiconductor devices using silicon controlled rectifiers, a semiconductor device for high power is constructed as a first and a second conventional example as shown in sectional views in FIGS. Have been. That is, the first conventional example shown in FIG. 38 is a semiconductor device mounted on an inverter circuit or the like of a train and has a maximum rating of a voltage of several hundred V and a current of several hundred A.

A semiconductor device 1 is configured by mounting two semiconductor elements 4 as silicon controlled rectifiers on an upper surface of a circuit board 3 bonded on a heat sink 2, and the circuit board 3 is made of a casing made of plastic resin or the like. It is covered by the body 5. On the surface of the housing 5, an anode electrode 7, a cathode electrode 8, and a gate electrode 9 connected to the corresponding electrode terminals of the semiconductor element 4 by connection lines 6 are provided.

However, such a semiconductor device has a high processing speed because each semiconductor element 4 is formed by cutting out a defect-free portion of a semiconductor wafer.
For this reason, when it is intended to increase the area of the semiconductor element 4 to cope with the increase in power with such a configuration, it is necessary to obtain a semiconductor wafer having a large area, but it is difficult to obtain a semiconductor wafer having no defect. It is very difficult to manufacture.

When the number of semiconductor elements 4 is further increased and arranged to increase the area, the circuit board 3 becomes larger and the housing 5 becomes larger, so that the size of the semiconductor device 1 becomes larger. Will be. In addition, when considering the heat generated by handling a large amount of power and the durability of the housing 5, the size of the device is further increased.

On the other hand, a second conventional example shown in FIG. 39 is a semiconductor device for opening and closing a high voltage and a large current in a power plant or the like.
The maximum rating is a voltage of several thousand V and a current of several thousand A. Such a semiconductor device 10 has a diameter of 30 mm to 100 mm.
Semiconductor device 1 using a semiconductor wafer of about mm
The cathode electrode 13 and the anode electrode 14 are provided so as to interpose the buffer plate 12 on the upper surface side and the lower surface side of 1, and a housing 15 made of a cylindrical ceramic or the like is provided. Reference numeral 16 denotes a gate electrode that penetrates the buffer plate 12, the cathode electrode 13, and the housing 15 in an insulated manner.

[0007] Such a structure is the same as that of the cathode electrode 1.
A load is applied in the direction from 3 to the anode electrode 14, and the semiconductor element 11, the buffer plate 12, the cathode electrode 13, and the anode electrode 14 are used so as to be pressed against each other. For this reason, the contact electric resistance and the contact thermal resistance between them are sufficiently small.

The semiconductor element 11 has a large area using a semiconductor wafer as it is in order to cope with high power. The semiconductor element 11 has excellent heat dissipation because both sides are evenly pressed against each other via the buffer plate 12, and the housing 15 is also formed of an airtight material and has excellent durability. Has become.

However, in such a device, the power that can be handled is larger than that of the first conventional example, but the processing speed is slow.

In response to such a conventional situation, recently, for example, the electric power handled in an inverter circuit or the like of a train using the semiconductor device of the first conventional example has been increased, and further processed at a high speed. I have to do it. In addition, it is required that the external dimensions do not increase so that the storage space can be efficiently stored.

[0011]

As described above, it is difficult to obtain a semiconductor device capable of high-speed processing as a large semiconductor device in order to meet the demand for higher power and higher processing speed. In addition, using a large number of semiconductor elements capable of high-speed processing increases the size of the device. The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a semiconductor device capable of achieving high power and high speed processing without using a large semiconductor element and without increasing the size of the device. To provide.

[0012]

According to the present invention, there is provided a semiconductor device comprising:
A plurality of semiconductor elements, at least one pair of electrode bodies sandwiching each of the semiconductor elements and forming an electrode portion, and a plurality of the electrode bodies are provided at portions where the semiconductor elements are sandwiched between the semiconductor elements, respectively. Multiple mutually prescribed
And a press-contact mechanism for pressing these press-contact surfaces in the direction in which the semiconductor element is sandwiched. The semiconductor device is characterized in that the angle is 90 degrees, and a plurality of semiconductor elements are formed at a predetermined angle with respect to each other.
A semiconductor unit formed by pressing in the clamping direction of the semiconductor device according pressing surface at least a pair of electrode bodies forming the electrode portions and sandwiched between the pressing surface formed by a, the semiconductor unit to cool the semiconductor unit And a coupling mechanism for coupling the arranged semiconductor units and the cooling units to each other, further comprising: an electrode body formed of an insulating material. An electrode base member, a conductive film formed on a predetermined portion of the surface of the electrode base member, and a press-contact surface made of the conductive film. A cooling hole through which a coolant flows to form an electrode portion by sandwiching the element between a plurality of pressure contact surfaces provided at a predetermined angle with each other and provided for each of the semiconductor elements; Be prepared A plurality of semiconductor units formed by pressing the provided electrode body in a direction in which the semiconductor element is sandwiched by the pressure contact surfaces, and a coupling mechanism for arranging and coupling these semiconductor units in a predetermined form. In addition, an electrode body having a V-shaped groove in which each groove wall forms one pressure contact surface, and the other pressure contact surface for sandwiching a semiconductor element in each gap between the one pressure contact surface and the other. An electrode body provided with a plurality of inverted V-shaped protrusions arranged so as to face the V-shaped groove forming the groove, and pressing means for pressing both electrode bodies in a direction in which the semiconductor element is sandwiched. In addition, the electrode body having the V-shaped groove is provided with a cooling means.

[0013]

In the semiconductor device constructed as described above, a plurality of semiconductor elements are provided at a plurality of mutually predetermined angles provided on a pair of electrode bodies corresponding to each of the semiconductor elements. It is sandwiched while being pressed against each gap of the press contact surface by the press contact mechanism. As a result, even if there is a dimensional variation in the direction of being sandwiched between a plurality of semiconductor elements, the semiconductor elements are sandwiched by a substantially uniform compressive force, and the contact electric resistance and the contact thermal resistance with the electrode body do not greatly vary. . Further, an uneven compressive force, which is generated when a semiconductor element having different dimensions is sandwiched on the same surface, does not act on the semiconductor element, and no damage or the like occurs. Further, by using a plurality of semiconductor elements capable of processing at a high speed, these semiconductor elements can be connected by an electrode body to function as a single semiconductor element. It can handle large power.

[0014]

Embodiments of the present invention will be described below with reference to the drawings.

First, a first embodiment will be described with reference to FIGS. 1 is a front view showing a front part of the housing in cross section, FIG. 2 is a top view showing a top part of the housing in cross section, FIG. 3 is a longitudinal sectional view, and FIG. FIG. 5 is a top view of the semiconductor unit, FIG. 6 is a longitudinal sectional view of the semiconductor unit, FIG. 7 is a sectional view for explaining the shape of the buffer plate, and FIG. FIG. 7B is a cross-sectional view according to a first modification, FIG. 7C is a cross-sectional view according to a second modification, and FIG. FIG. 8 is a cross-sectional view according to a third modification, FIG. 8 is a side view of a cooling unit, and FIG. 9 is a top view of the cooling unit.

FIG. 10 is a side view showing a first modification of the semiconductor unit, FIG. 11 is a top view showing a first modification of the semiconductor unit, and FIG. 12 is a second modification of the semiconductor unit. FIG. 13 is a front view illustrating a second modification of the semiconductor unit, FIG. 14 is a front view illustrating a third modification of the semiconductor unit, and FIG. 15 is a front view illustrating the third modification of the semiconductor unit. FIG. 16 is a front view showing a fourth modification of the semiconductor unit, and FIG. 17 is a longitudinal sectional view showing a fourth modification of the semiconductor unit.

FIG. 18 is a side view showing a fifth modification of the semiconductor unit, FIG. 19 is a top view showing a fifth modification of the semiconductor unit, and FIG. 20 is a sixth view of the semiconductor unit. FIG. 21 is a side view showing a modification, and FIG. 21 is a top view showing a sixth modification of the semiconductor unit.
Is a side view showing a seventh modification of the semiconductor unit;
FIG. 23 is a top view showing a seventh modification of the semiconductor unit, FIG. 24 is a side view showing an eighth modification of the semiconductor unit, and FIG. 25 is a top view showing an eighth modification of the semiconductor unit. FIG.

1 to 3, a semiconductor device 21 has a rectangular parallelepiped casing 25 formed by an upper plate 22, a lower plate 23, and a side plate 24 made of ceramics or the like, and is alternately provided in the casing 25. It comprises three semiconductor units 26 arranged and housed and four cooling units 27 having substantially the same external shape as the semiconductor units 26. The inside of the housing 25 is filled with nitrogen gas or an inert gas, or filled with a polymer resin or insulating oils and fats.

The semiconductor unit 26 and the cooling unit 27 housed in the housing 25 are
7 are arranged so as to be located on both side ends of the semiconductor unit 26, and the four current collectors 2 forming the coupling mechanism 28 are further arranged.
9a, 29k and four bolts 30 and nuts 31 are connected to each other by a disc spring 32. That is, two current collectors 29a and 29k are respectively in contact with both ends of the arranged units 26 and 27, and the left and right current collectors are separated from the units 26 and 27 by bolts 30 and nuts 31 provided in the arrangement direction. Both ends of the electric bodies 29a and 29k are fixed. In this manner, the semiconductor unit 26 and the cooling unit 27 are joined so that the respective side surfaces are in close contact with each other and a good thermal and electrical connection is maintained.

The rows of the semiconductor unit 26 and the cooling unit 27 connected by the connecting mechanism 28 are arranged such that the upper and lower ends of the current collector 29 are engaged with the grooves 34 of the insulating member 33 and the upper plate 22 and the lower plate 23 It is held electrically insulated between them. A control unit 35 including a snubber circuit, a protection circuit, and the like is housed at one end of the housing 21.
The input / output terminal 5 is connected to an input / output terminal 36 which penetrates through the side plate 24 and has a penetrated portion insulated and extends to the outside.

Further, three connection terminals 37 of the control unit 35
These connection terminals 37 are connected to the anode electrode body 38 and the cathode electrode body 3 of the semiconductor unit 26.
The current collector 29 which is electrically connected to each other 9 and is insulated from other electrodes, and the corresponding one of the gate terminals 40 are connected by connection lines 41. The cooling pipes 42a and 42k attached to the upper and lower surfaces of the cooling unit 27 extend through the side plate 24 to the outside and are connected to a cooling source (not shown).

On the other hand, in FIGS. 4 to 7, the semiconductor unit 26 has a rectangular parallelepiped outer shape, and two press contact surfaces 43 are provided on the front side surface (left side surface in FIG. 4) of each V-shaped groove wall. And a cathode electrode body 39 having two press-contact surfaces 44 projecting in a reverse V shape on the back side surface (the right side surface in FIG. 4). The two electrode bodies 38 and 39 are formed of a conductive material such as copper or a nickel alloy. The V-shaped press contact surface 43 has an angle of 90 degrees between the two surfaces, and the inverted V-shaped press contact surface 44 has two surfaces. Has an apex angle of 90 degrees.

Thus, the semiconductor unit 26 is constructed by combining the anode electrode body 38 and the cathode electrode body 39 such that the pressure contact surfaces 43 and 44 are opposed to each other with a gap provided therebetween. The corresponding surfaces of 43 and 44 are parallel.

Then, opposing press contact surfaces 43 and 44
, Two semiconductor elements 45, for example, silicon-controlled rectifiers capable of high-speed processing are sandwiched by providing a buffer plate 46 formed of a conductive material such as molybdenum on both surfaces thereof. . The buffer plate 46 is shown in FIG.
The step 46a is provided on the side to relieve the concentrated stress acting on the semiconductor element 45 due to the temperature difference as shown in FIG.
And the area thereof is larger than the area of the side in contact with both electrode bodies 38 and 39.

The shape of the buffer plate 46 for relieving the concentrated stress is not limited to that shown in FIG. 7A, but may be similar to that of the first modified example shown in FIG. May be formed to be trapezoidal. FIG.
As in the second modified example shown in FIG. 9C, the buffer plate 48 is formed by a combination of a first buffer plate 48a and a second buffer plate 48b having different sizes, and a large first buffer having the same shape as the semiconductor element 45 is formed. May be on the semiconductor element 45 side and the small second buffer plate 48b may be on both electrode bodies 38 and 39. Further, as in a third modification shown in FIG.
The buffer plate 49 may be a flat plate having the same shape as the semiconductor element 45, and a projecting step portion 49 a smaller than the semiconductor element 45 may be provided at a portion of the electrode bodies 38 and 39 in contact with the buffer plate 49.

A gap between the pressure contact surfaces 43 and 44 of the electrode bodies 38 and 39 where no semiconductor element 45 exists is provided with a heat-resistant polymer resin such as polyimide resin, AlN or the like. Insulators 50 and 51 are provided which are formed of an insulating material such as ceramics or rubber such as silicon rubber according to the gap shape, and are mounted so as to also have a function as a spacer for positioning the semiconductor element 45. I have.

Further, the anode electrode body 38 and the cathode electrode body 39 are provided with an insulating member 53, a bolt 54, and a pressure contact mechanism 52 provided at five places at four corners and a center part from the front side to the back side. The semiconductor element 45 is pressed by the nut 55 and the disc spring 56 so as to be sandwiched between the press contact surfaces 43 and 44. And both electrode bodies 38,
Insulating tubes 57 and 58 are inserted into the bolts 54 penetrating through the inside of the 39, and insulation between the electrode bodies 38 and 39 is secured. A gate lead 59, one end of which is connected to the gate electrode of the semiconductor element 45 and the other end of which is connected to the gate terminal 40, is also provided with an insulating coating 60, and extends in a front direction through a groove 61 formed on the upper and lower surfaces of the cathode electrode body 39. Is derived.

The coupling mechanism 28 and the pressing mechanism 52
The disc springs 32 and 56 attached together with the disc springs are deformation absorbing mechanisms for absorbing deformation or the like in each part due to a temperature change. Other shapes formed may be used.

On the other hand, in FIGS. 8 and 9, the cooling unit 27 has a rectangular parallelepiped shape having substantially the same outer shape as the semiconductor unit 26, and has two press contact surfaces 63 on the front side (the left side in FIG. 8). And a pair of press-contact surfaces 65 protruding in an inverted V shape so as to face the press-contact surfaces 63 on the back side (the right side in FIG. 8). The cathode-side conductor 66 included in the above is provided. The conductors 64 and 66 are formed of a conductive material such as copper or a nickel alloy. The V-shaped press contact surface 63 has an angle of 90 degrees between the two surfaces, and the V-shaped press contact surface 6
5 has an apex angle of 90 degrees formed by the two surfaces.

An insulator 67 made of an insulating material such as a polymer resin such as a polyimide resin, a ceramic such as AlN, or a rubber such as silicon rubber is mounted in the V-shaped gap between the two pressure contact surfaces 63 and 65. Have been. Further, the anode-side conductor 64 and the cathode-side conductor 66 are pressed against the insulator 67 by the insulating member 53, the bolt 54, and the nut 55 of the press-contact mechanism 52 provided at four corners from the front side to the back side. The pressing member 63 is pressed in a direction in which the pressing surface 63 and the pressing surface 65 are pressed.

One cooling hole 68a, 68k is formed in each of the conductors 64, 66 so as to penetrate in the vertical direction.
The cooling pipes 42a and 42k formed in the shape of a letter are attached. Each of the cooling pipes 42a and 42k is connected to a corresponding cooling source so as to penetrate the side plate 24 of the housing 25, and a liquid such as water flowing out or flowing into or from each cooling source, or a gas. It is cooled by a gas-liquid mixed refrigerant and a predetermined temperature is maintained. In addition,
When the refrigerant is an electrical insulator, the cooling source may be the same, and the cooling pipe 42a and the cooling pipe 42k may be electrically insulated and connected to the cooling source.

The semiconductor device 45 thus constructed, which is capable of performing high-speed processing, is sandwiched between two of the three semiconductor units 26, and is composed of both anode and cathode electrode bodies 38, 39 and both conductors 64, 66 and are connected in parallel via one another to function as a single semiconductor element having a large area. The six semiconductor elements 45 connected in parallel are connected to the current collector 2.
9 and a corresponding connection terminal 37 of the control unit 35 via the connection line 41 and an input / output terminal 36 to an external circuit or the like.

The heat generated from the semiconductor element 45 during operation is discharged to the outside via the refrigerant flowing through the cooling holes 68a and 68k of the cooling units 27 arranged on both sides of each semiconductor unit 26. Semiconductor unit 26
Are maintained at a predetermined temperature state and perform an operation of a predetermined performance.

According to the present embodiment configured as described above, the two semiconductor elements 45 sandwiched between the semiconductor units 26 include the anode electrode body 38 and the cathode electrode body 3.
9 are pressed between the two press contact surfaces 43 and 44 formed by the press contact mechanism 52 so as to be pressed. Then, each semiconductor element 45 is individually pressed by the press contact surfaces 43 and 44. In addition, the disc spring 32 absorbs deformation and the like of each part due to a temperature change.

Therefore, the two semiconductor elements 45 are sandwiched by substantially equal compressive force even if there is a dimensional variation between the two, and the two semiconductor elements 45 are in contact with the two electrode bodies 38 and 39 and have a contact electric resistance and contact. Thermal resistance does not vary greatly. Further, the semiconductor element 45 is not subjected to an uneven compressive force which is generated when a semiconductor element having different dimensions is sandwiched on the same surface, and there is no problem such as breakage.

Further, in the semiconductor unit 26, the anode electrode body 38 and the cathode electrode body 39 sandwiching the semiconductor element 45 are connected to the anode-side conductor 64 and the cathode-side conductor 66 of the adjacent cooling unit 27 having substantially the same shape. Contact
Since the corresponding contact portions are pressed by the coupling mechanism 28 and pressed against each other, the contact electric resistance and the contact thermal resistance do not greatly vary. Thus, each semiconductor element 45 functions as a single semiconductor element, and has a large area and can cope with large power.

The semiconductor unit 26 and the cooling unit 2
Even in the case where the elements 7 are alternately arranged, even if the parts are deformed due to the temperature change by the disc spring 56, the deformations can be absorbed, and the performance of each contact part does not decrease.

Further, the heat generated in each semiconductor element 45 is also eliminated by the cooling unit 27, so that a highly reliable operation can be obtained, the size of the device including the cooling unit 27 is reduced, and the storage space and the like are limited. Even in such a case, it can be efficiently stored.

It should be noted that the semiconductor unit 26 is not limited to the above-described one, but may be modified as follows.

First, a first modification will be described with reference to FIGS. 10 and 11, the semiconductor unit 70 has a substantially rectangular parallelepiped outer shape. The semiconductor unit 70 is provided between the anode electrode body 38 and the cathode electrode body 39 with the semiconductor unit 26 of the first embodiment. The difference is that an insulator corresponding to the insulators 50 and 51 is not provided.

The semiconductor unit 70 has a pinch angle of 90.
The anode electrode body 72 having two V-shaped press contact surfaces 71 formed on the front side (the left side in FIG. 10) and an inverted V formed so that the apex angle is 90 degrees. It has a cathode electrode body 74 having two press-contact surfaces 73 on the back side (the right side in FIG. 10). The two electrode bodies 72 and 74 are formed of a conductive material such as copper or a nickel alloy.
When the two electrode bodies 72 and 74 are combined so that they face each other, the gap between the corresponding surfaces of the press contact surface 71 and the press contact surface 73 is parallel.

The two parallel pressure contact surfaces 71 and 73
The semiconductor elements 45 are sandwiched in such a manner that buffer plates 46 are provided on both surfaces thereof.
The space between the semiconductor devices 73 where the semiconductor element 45 does not exist is a space as it is.

Further, the semiconductor element 45 is separated from the anode electrode body 72 and the cathode electrode body 74 by press contact mechanisms 52 and disc springs 56 provided at five places at four corners and a center part from the front side to the back side. It is pressed in the direction of being sandwiched between the press contact surfaces 71 and 73. And both electrode bodies 72, 7
An insulating tube 75 is inserted into the bolt 54 that penetrates through the inside of the tube 4 at the penetrating portion, thereby ensuring insulation between the electrode bodies 72 and 74.

The semiconductor unit 70 thus configured
Can be replaced by a plurality of cooling units 27 instead of the semiconductor units 26 of the first embodiment, which are arranged alternately and connected to each other, so that the first unit can be provided without providing an insulator in the gap between the press contact surfaces 71 and 73. The same operation and effect as the embodiment can be obtained.

Next, a second modification will be described with reference to FIGS. 12 and FIG. 13, the semiconductor unit 76 has a substantially rectangular parallelepiped outer shape.
A first electrode body 77 having the same outer shape as the anode electrode body 72 of the semiconductor unit 70 of the modified example, and a second electrode body 74 having the same outer shape as the cathode electrode body 74 formed by two insulated block-shaped electrode members. And the electrode body 78.

The first electrode body 77 has an included angle of 9
It has two V-shaped press contact surfaces 79 formed at 0 degrees on the front side (the left side in FIG. 13). On the other hand, the second electrode body 78 has two inverted V-shaped press contact surfaces 80a and 80b formed so that the apex angle is 90 degrees.
On the rear side (the right side in FIG. 13), and a first electrode member 82a in which press-contact surfaces 80a are formed on both surfaces of an insulating member 81 made of a flat ceramic or the like.
And the second electrode member 82b on which the press-contact surface 80b is formed and joined to form an integral body.

Further, the semiconductor unit 76 includes first and second electrode members 82 of the first electrode body 77 and the second electrode body 78.
Reference numerals a and 82b are formed of a conductive material such as copper or a nickel alloy, and when the two electrode bodies 77 and 78 are combined so that the press contact surface 79 and the press contact surfaces 80a and 80b face each other, the press contact surface 7
The gap between the surfaces 9 and the corresponding surfaces of the press contact surfaces 80a and 80b is parallel.

The two parallel pressing surfaces 79 and 80
Semiconductor devices 45a and 45b, which are, for example, silicon controlled rectifiers, are sandwiched between gaps a and 80b such that buffer plates 46 are provided on both surfaces of the semiconductor devices 45a and 45b. A gap portion where no 45a, 45b exists is a gap as it is. Note that 59a and 59b are semiconductor elements 45a and 45, respectively.
The gate lead is connected to the gate electrode b.

The first electrode body 77 and the second electrode body 7
The semiconductor element 45 is formed by pressing mechanisms 52 and disc springs 56 provided at four corners from the front side to the back side.
a and 45b are pressed in a direction of sandwiching between the press contact surface 79 and the press contact surfaces 80a and 80b. And both electrode bodies 77,
An insulating tube 75 is inserted into the bolt 54 that penetrates the inside of the inside 78, so that insulation between the electrode bodies 77 and 78 is ensured.

The semiconductor unit 76 thus configured
Since the first electrode member 82a and the second electrode member 82b are insulated by the second electrode body 78 and the insulating member 81,
The semiconductor elements 45a and 45b have the same extraction on the first electrode body 77 side, but have different extraction on the second electrode 78 side.

Although not shown, the cooling unit is also formed to have substantially the same outer shape as the semiconductor unit 76, and the portions corresponding to the first electrode member 82a and the second electrode member 82b are electrically connected to each other in the same manner. Insulate and configure. Then, the semiconductor unit 76 is connected to such a cooling unit by alternately arranging a plurality of such units, and for example, a first electrode body 77 is attached to a housing corresponding to the housing 25 of the first embodiment.
The first electrode member 82a and the second electrode member 82b of the second electrode body 78 are electrically insulated and housed so that they can be independently taken out.

For example, when used in a rectifier circuit, an inverter circuit, or the like, the semiconductor elements 45a and 45b sandwiched by the semiconductor unit 76, and the anodes of both semiconductor elements 45a and 45b are provided on the first electrode body 77 side. So that the cathode comes to the second electrode body 78 side, and the other semiconductor element 4 comes to the first electrode body 77 side for the other one.
The anodes are made to come to the second electrode body 78 side with the cathodes of 5a and 45b coming.

If the semiconductor elements 45a and 45b sandwiched between the two electrode bodies 77 and 78 are configured so that their directions are reversed, the circuit configuration is simplified by combining these elements, and the wiring length is shortened. , Inductance and surge voltage can be reduced, which is suitable for higher speed and higher power.

Further, for example, with respect to one of the semiconductor units 76, the cathode comes to the first electrode member 82a side of the second electrode body 78 such that the semiconductor element 45a has the anode to the first electrode body 77 side. And the semiconductor element 4
5b is such that the cathode comes to the first electrode body 77 side and the anode comes to the second electrode member 82b side of the second electrode body 78. In the case of the semiconductor unit 76 thus configured, since the relationship between the anode and the cathode is reversed by turning the semiconductor unit 76 over, a rectifier circuit or the like can be easily formed by combining these semiconductor units 76 alternately. It is also suitable for high speed and high power.

Next, a third modification will be described with reference to FIGS. 14 and 15, the semiconductor unit 83 has a substantially rectangular parallelepiped outer shape. The semiconductor unit 83 includes a flat insulating member 84 made of ceramics and the first and second electrode bodies 85 disposed on the upper surface of the insulating member 84. , 86, and third and fourth electrode bodies 87, 88 similarly arranged on the lower surface with the first and second electrode bodies 85, 86, respectively.

The first electrode body 85 and the third electrode body 87 are fixed to the insulating member 84 by the press-contact mechanism 52a having the bolt 54a and the disc spring 56. Similarly, the second electrode body 86 and the fourth electrode body 88 are located between the press contact surfaces 89 and 90 of the first and second electrode bodies 85 and 86, and between the third and fourth electrode bodies 85 and 86.
A pressing mechanism 52 having bolts 54b so that the semiconductor elements 45a and 45b are provided between the pressing surfaces 91 and 92 of the fourth electrode bodies 87 and 88 and the buffer plates 46 are sandwiched therebetween.
b, and is fixed to the insulating member 84 by the disc spring 56.

Each of the electrode bodies 85, 86, 87, 88 having the press contact surfaces 89, 90 for pressing and holding the semiconductor elements 45a, 45b and the press contact surfaces 91, 92 is made of a conductive material such as copper or nickel alloy. The first electrode body 85 and the third electrode body 87 are symmetrical, and the second electrode body 8
The sixth and fourth electrode bodies 88 are formed so as to be symmetrical.

Then, the first electrode body 85 and the third electrode body 8
In FIG. 7, pressure contact surfaces 89 and 91 are formed on the rear side surface (the right side surface in FIG. 15) so that the apex angle of both surfaces is 90 degrees, and the second electrode body 86 and the fourth electrode body are formed. At 88, pressure contact surfaces 90, 92 are formed on the front side surface (the left side surface in FIG. 15) so that the included angle between the two surfaces is 90 degrees. For this reason, the semiconductor element 45 faces
The press-contact surfaces 89 and 91 and the press-contact surfaces 90 and 92 sandwiching the a and 45b are parallel to each other.

The semiconductor unit 83 thus configured
The electrodes 85, 86, 87, and 88 are insulated from each other and pressed against the corresponding anodes or cathodes of the semiconductor elements 45a and 45b. Therefore, although a cooling unit used in combination with the semiconductor unit 83 is not shown, the outer shape of the cooling unit is substantially the same as that of the semiconductor unit 83, and the portions corresponding to the electrode bodies 85, 86, 87, and 88 are similarly formed. It is configured to be electrically insulated from each other.

Then, a plurality of such cooling units and the semiconductor units 83 are connected by alternately arranging them or the like, and, for example, the respective electrode bodies 85, 85 are attached to a housing corresponding to the housing 25 of the first embodiment. 86, 87, and 88 are housed so as to be electrically insulated from each other, and are provided with input / output terminals so that they can be independently connected to the outside. Alternatively, it is used by being connected in a housing to form a required circuit.

With the above configuration, it is possible to cope with various circuit configurations, and it is also suitable for high speed and high power.

Next, a fourth modification will be described with reference to FIGS. 16 and 17, the semiconductor unit 93 has a substantially equilateral triangular prism shape, and three substantially equilateral triangular pressure contact surfaces 94 form a concave portion on the front side surface (the left side surface in FIG. 17). And a substantially tetrahedral cathode electrode body 97 in which three substantially regular triangular pressure contact surfaces 96 are opposed to each other by providing a gap in the pressure contact surface 94. ing.

The two electrode bodies 95 and 97 are formed of a conductive material such as copper or a nickel alloy. When the two electrode bodies 95 and 97 are combined so that the press contact surface 94 and the press contact surface 96 face each other, the press contact surfaces The gap between the corresponding surfaces of the press contact surface 94 and the press contact surface 96 is parallel.

In three gaps formed with the press contact surfaces 94 and 96 facing each other, semiconductor devices 45c, for example, silicon controlled rectifiers capable of high-speed processing are provided with buffer plates 46c on both surfaces. So that
An insulator 50, which is formed in accordance with a gap shape in a gap portion where the semiconductor element 45c does not exist between the two pressure contact surfaces 94 and 96,
51 is mounted so as to also have a function as a spacer for positioning the semiconductor element 45.

The anode electrode body 95 and the cathode electrode body 97 are separated from each other by the press-contact mechanism 52 and the disc spring 56 provided at three corners from the front side to the back side.
5c is pressed in a direction of sandwiching between the press contact surface 94 and the press contact surface 96. An insulating tube 75 is inserted into the penetrating portion of the bolt 54 that penetrates through the insides of the two electrode bodies 95 and 97, so that insulation between the two electrode bodies 95 and 97 is ensured.

The semiconductor unit 93 thus configured
Are connected to a cathode lead (not shown) to the cathode electrode body 97, and a plurality of cooling units having a shape capable of being appropriately combined with the semiconductor unit 93 are interposed between the cathode leads as needed. And
For example, in a case corresponding to the case 25 of the first embodiment,
Since the two electrode bodies 95 and 97 are housed and used so as to be electrically insulated from each other, the device does not have a large external shape, and is suitable for high speed and high power.

Next, a fifth modification will be described with reference to FIGS. 18 and 19, the semiconductor unit 98 has a substantially rectangular parallelepiped outer shape. The semiconductor unit 98 is the same as the semiconductor unit 2 of the first embodiment.
6 is different from the sixth embodiment in that cooling holes 68a and 68k are provided in the anode electrode body 99 and the cathode electrode body 100, respectively.

In the semiconductor unit 98, the two press-contact surfaces 43 having the anode electrode body 99 sandwiched by the front side surface (the left side surface in FIG. 18) at an angle of 90 degrees are formed as V-shaped groove walls. The cathode electrode body 100 has two inverted V-shaped press-contact surfaces 44 each having an apex angle of 90 degrees and a rear side surface (FIG. 1).
8, both electrode bodies 99 and 100 are formed of a conductive material such as copper or a nickel alloy. Thereby, both electrode bodies 99, 100
The semiconductor unit 98 is configured by combining the pressure contact surfaces 43 and 44 such that the pressure contact surfaces 43 and 44 are opposed to each other with a gap therebetween. At this time, the corresponding surfaces of both the pressure contact surfaces 43 and 44 are parallel to each other.

The two parallel pressure contact surfaces 43 and 44
The semiconductor elements 45 are respectively sandwiched in such a manner that the buffer plates 46 are provided on both surfaces thereof.
In the gap portion where the semiconductor element 45 does not exist between 44, insulators 50 and 51 formed according to the gap shape are mounted so as to also have a function as a spacer for positioning the semiconductor element 45. . Then, both electrode bodies 9
9 and 100, the semiconductor element 45 is sandwiched between the press-contact surfaces 43 and 44 by press-contact mechanisms 52 and disc springs 56 provided at five positions at four corners and a center portion from the front side to the back side. Direction.

The two electrode bodies 99 and 100 are
Two cooling holes 68a and 68k are formed in the vicinity of the side surface opposite to the portion where the pressure contact surface 3 and the pressure contact surface 44 are formed so as to penetrate vertically.
Each of the 68k openings has an L-shaped cooling pipe 42a,
42k is attached. Each of the cooling pipes 42a and 42k is connected to a corresponding cooling source, and is cooled by a liquid such as water flowing out and in between the respective cooling sources, or a refrigerant of a gas or a gas-liquid mixture. Is to be retained.

The semiconductor unit 98 thus configured
Is arranged in a housing corresponding to the housing 25 of the first embodiment in place of the semiconductor unit 26 and the cooling unit 27, and a plurality of housings are combined and accommodated. The operation and effect can be obtained, and the device can be made smaller.

Next, a sixth modification will be described with reference to FIGS. 20 and 21, the semiconductor unit 101 has a substantially rectangular parallelepiped outer shape, and is provided with an anode electrode body 102 and a cathode electrode body 103. The anode electrode body 102 has two press-contact surfaces 43 having a sandwiching angle of 90 degrees on the front side surface (the left side surface in FIG. 20) as respective V-shaped groove walls, and the cathode electrode body 103 has , And two reverse V-shaped press contact surfaces 44 having a vertical angle of 90 degrees are provided on the rear side surface (the right side surface in FIG. 20).

The semiconductor unit 101 is constructed by combining the two electrode bodies 102 and 103 such that the pressure contact surface 43 and the pressure contact surface 44 are arranged to face each other with a gap therebetween. The corresponding surfaces are parallel.

The two parallel pressure contact surfaces 43 and 44
The semiconductor elements 45 are respectively sandwiched in such a manner that the buffer plates 46 are provided on both surfaces thereof.
In the gap portion where the semiconductor element 45 does not exist between 44, insulators 50 and 51 formed according to the gap shape are mounted so as to also have a function as a spacer for positioning the semiconductor element 45. . Then, both electrode bodies 10
Reference numerals 2 and 103 denote a semiconductor element 45 and a press contact surface 43 by pressing a bolt 54 or a nut 55 of a press contact mechanism 52c and a disc spring 56 provided at five points at four corners and a center portion from the front side to the back side. 44 is pressed in the direction of pinching.

Further, the anode electrode body 102 and the cathode electrode body 103 are made of an insulating material having substantially the same shape, such as AlN, and having an excellent heat conduction property, and formed of an insulating material.
And a cathode electrode base member 105. These electrode base members 104 and 105 are formed by forming a thick film or a thin film with a conductive material such as copper, aluminum, or tungsten at a predetermined portion of the surface, so that the press contact surfaces 43 and 44, the bonding surfaces 106a and 106k, and the gates are formed. A lead 107 is provided.

The semiconductor unit 10 configured as described above
1 is formed by alternately arranging and coupling a plurality of cooling units 27 and coupling surfaces 106a and 106k in place of the semiconductor unit 26 to a casing corresponding to the casing 25 of the first embodiment, for example. The same operation and effect as those of the embodiment can be obtained, and the pressing mechanism 52c can be simplified.

Next, a seventh modification will be described with reference to FIGS. 22 and 23, the semiconductor unit 108 has a substantially rectangular parallelepiped outer shape, which is formed by a first electrode body 109 and a second electrode body 110. Both of the electrode bodies 109 and 110 have a main part. It is composed of a first electrode base member 111 and a second electrode base member 112 formed of an insulating material having excellent heat conductivity such as AlN. The first electrode base member 111 has a V-shaped press-contact surface portion 113 having a 90 ° included angle on the front side surface (the left side surface in FIG. 22), and the second electrode base member 112 has a vertex angle. An inverted V-shaped pressing surface portion 114 having a 90-degree angle is provided on the rear side surface (the right side surface in FIG. 22).

The electrode bodies 109 and 110 are formed by forming a thick film or a thin film of a conductive material such as copper, aluminum, or tungsten on a predetermined portion of the surface of both electrode base members 111 and 112 so that the pressure contact surface portion 113 is formed. Are provided with first and second press contact surfaces 115a and 115b, and the first and second coupling surfaces 116a and 1
16b is provided. Further, the press-contact surface portion 114 is provided with a press-contact surface 117, and a connecting surface 118 is provided on a side surface thereof, and the second electrode base member 112 is further provided with gate leads 119a and 119b.

The two electrode bodies 109 and 110 are connected to the first,
The semiconductor unit 108 is configured by combining the corresponding surfaces of the second press contact surfaces 115a, 115b and the press contact surface 117 so as to face each other with a gap provided therebetween, and at this time, the opposing press contact surfaces 115a, 115b, 117 Are parallel. The parallel contact surfaces 115a, 115
b, 117, the semiconductor elements 45a, 45
5b is sandwiched so as to provide the buffer plate 46 on both surfaces thereof, and a gap portion where the semiconductor elements 45a and 45b do not exist is a gap as it is.

The two electrode bodies 109 and 110 are connected to each other by a press contact mechanism 52c and a disc spring 56 provided at five places at four corners and a central part from the front side to the back side.
The semiconductor elements 45a, 45b sandwiched between the gaps 15a, 115b, 117 are pressed against the respective pressure contact surfaces 115a, 115b, 117.
Between them.

The semiconductor unit 10 configured as described above
8 is the first and second press contact surfaces 115 of the first electrode body 109
a, 115b and the first and second coupling surfaces 116a, 116b
Are formed separately on the surface of the first electrode base member 111 made of an insulating material.
In the case of 45b, the extraction on the second electrode body 110 side is common, while the extraction on the first electrode body 109 side is separate.

For such a semiconductor unit 108,
Although not shown, the semiconductor unit 1 is also used for the cooling unit.
08 and the first electrode body 109
The portions corresponding to the first and second coupling surfaces 116a and 116b are similarly electrically insulated from each other. The semiconductor unit 108 is coupled to such a cooling unit by, for example, alternately arranging a plurality of such units. For example, the first electrode body 10 is attached to a housing corresponding to the housing 25 of the first embodiment.
9, a first coupling surface 116a and a second coupling surface 116b;
The second electrode body 110 is electrically insulated from the second electrode body 110 and housed so that they can be independently taken out, and are used in the same manner as in the second modification.

For example, when used in a rectifier circuit, an inverter circuit, or the like, the semiconductor elements 45a and 45b sandwiched by the semiconductor unit 108 may be replaced by one of the first electrode members 10a.
The anodes of both semiconductor elements 45a and 45b come to the 9th side, and the cathodes come to the second electrode body 110 side, and the other semiconductor elements 45a and 45b come to the first electrode body 109 side. So that the cathode of the second
In such a manner that the anode comes to the electrode body 110 side.

If the semiconductor elements 45a and 45b sandwiched between the two electrode bodies 109 and 110 are configured to have the opposite directions, the circuit configuration is simplified by combining these elements, and the wiring length is shortened. , Inductance and surge voltage can be reduced, which is suitable for higher speed and higher power.

Further, for example, with respect to one of the semiconductor units 108, the semiconductor element 45 a is arranged such that the anode comes to the second electrode body 110 side so that the first electrode body 109
Of the first electrode body 115b so that the cathode comes to the pressure contact surface 115a side of the first electrode body 115b.
The anode is on the side. In the case of the semiconductor unit 108 thus configured, the semiconductor unit 108
, The relationship between the anode and the cathode is reversed, so that a rectifier circuit or the like can be easily formed by alternately combining these semiconductor units 108 with the inverted ones, thereby increasing the speed and power consumption. It is also preferable.

Next, an eighth modification will be described with reference to FIGS. 24 and 25. 24 and 25, the semiconductor unit 120 has a substantially rectangular parallelepiped outer shape, which is formed by a first electrode body 121 and a second electrode body 122. Both of the electrode bodies 121 and 122 have a main part. It is composed of a first electrode base member 111 and a second electrode base member 112.

The first and second electrode bodies 121 and 122 are formed by forming a thick film or a thin film of a conductive material such as copper, aluminum, or tungsten on predetermined portions of the surfaces of the two electrode base members 111 and 112. Electrode base member 111
Are the first and second press contact surfaces 123a, 123 on the press contact surface portion 113.
3b, and the coupling surfaces 124a, 124
4b, element mounting surfaces 125a and 125b, wiring surface 126
a, 126b are provided. The second electrode base member 112 has third and fourth press contact surfaces 127 on the press contact surface portion 114.
a, 127b are provided, and the coupling surface 128 is provided on another surface.
a, 128b are provided.

The two electrode bodies 121 and 122 are connected to the first,
The semiconductor unit 1 is assembled by combining the second pressing surfaces 123a and 123b and the corresponding surfaces of the third and fourth pressing surfaces 127a and 127b so as to face each other with a gap therebetween.
20 are configured, and at this time, the opposing press contact surfaces 123a,
123b, 127a, and 127b are parallel to each other. Each of the parallel pressing surfaces 123a, 123b, 127a,
The semiconductor elements 45a, 45
b is sandwiched so as to provide the buffer plate 46 on both surfaces thereof, and a gap portion where the semiconductor elements 45a and 45b do not exist is a gap as it is.

Then, the two electrode bodies 121 and 122 are connected to each other by a press contact mechanism 52c and a disc spring 56 provided at five places at four corners and a center part from the front side to the back side.
The semiconductor elements 45a, 45b sandwiched between the gaps 15a, 115b, 117 are pressed against the respective pressure contact surfaces 115a, 115b, 117.
Between them.

Active or passive circuit elements 129 for buffering and protection are provided on the element mounting surfaces 125a and 125b.
a, 129b are placed, and these are connected to the corresponding wiring surfaces 126a, 126b by connection lines 130 so as to conduct.

The semiconductor unit 12 configured as described above
0 indicates that the anode, cathode and gate of the semiconductor elements 45a and 45b can be independently taken out. Then, the semiconductor unit 120 is formed to have substantially the same outer shape as the semiconductor unit 120,
A cooling unit (not shown) in which a similar conductive portion is formed is joined by, for example, alternately arranging a plurality of cooling units.
For example, it is used by being housed in a housing corresponding to the housing 25 of the first embodiment.

With the above configuration, it is possible to cope with various circuit configurations, and it is also suitable for high speed and high power.

Next, a second embodiment will be described with reference to FIGS. 26 and 27. FIG. 26 is a front view showing a cross section of the front part of the housing, and FIG. 27 is a longitudinal sectional view.

26 and 27, the semiconductor device 1
31 is an upper plate 132 and a lower plate 133 made of ceramics or the like,
A rectangular parallelepiped housing 1 airtightly formed by the side plate 134
And five semiconductor units 137 arranged and housed in the casing 135 so as to be sandwiched between upper and lower sides by a plate-shaped insulating member 136 formed of an insulating material having excellent thermal conductivity such as AlN. It is provided with.

The housing 135 includes an upper plate 132 and a lower plate 13.
Radiator 13 formed by a plurality of fins on the outer surface of 3
8 are provided. Further, the housing 135 is in a state in which nitrogen gas or an inert gas is sealed, or is filled with a polymer resin or insulating fats and oils.

On the other hand, the semiconductor unit 137 housed in the housing 135 has two press-contact surfaces 43 each having a 90 ° sandwiching angle on the front side surface (left side surface in FIG. 27). An anode electrode body 139 having a groove in the shape of a cathode, and a cathode electrode body 140 having two press-contact surfaces 44 having a vertical angle of 90 degrees on the back side (the right side in FIG. 27). The semiconductor device 45 is provided between the press contact surfaces 43 and 44 and is provided between the press contact surfaces 43 and 44. The anode electrode body 139 and the cathode electrode body 140 are formed of a conductive material such as copper or a nickel alloy, and are pressed in a direction to clamp the semiconductor element 45 by the pressing mechanism 52 and a disc spring (not shown). Has become.

Then, the 5 stored in the housing 135
One semiconductor unit 137 is connected to a coupling mechanism of four bolts 141 and nuts 142 by a disc spring (not shown) of a deformation absorbing mechanism.

In this structure, the heat generated when the semiconductor element 45 is operated is transmitted from the anode electrode body 139 to the housing 135 via the insulating member 136 in contact with the anode electrode body 139, and 138 to the outside. Thus, the semiconductor unit 137 continues to operate within the predetermined temperature range.

As a result, in this embodiment, the same operation and effect as those of the first embodiment can be obtained, and
The cooling unit has a simple structure in which the cooling units are not provided between the semiconductor units 137, and the manufacturing is easy.

Next, a third embodiment will be described with reference to FIGS. FIG. 28 is a top view showing a cross section of the upper part of the housing, and FIG. 27 is a longitudinal sectional view.

In FIGS. 28 and 29, the semiconductor device 1
43 is an upper plate 144 and side plates 145 made of ceramics or the like,
And a radiator 14 formed by a plurality of fins on the outer surface
6 and a substantially rectangular parallelepiped housing 148 airtightly formed by the lower case 147 provided with the semiconductor device 6, and five semiconductor units 150 fitted and housed in the recess 149 of the lower case 147 in the housing 148. It is comprised including. The housing 148 is filled with a nitrogen gas or an inert gas, or filled with a polymer resin or an insulating oil or fat.

On the other hand, the semiconductor unit 150 housed in the housing 148 has an anode electrode body 151 having a V-shaped groove having two press-contact surfaces 43 having a sandwiching angle of 90 degrees on its upper surface as respective groove walls. A cathode electrode body 152 having two inverted V-shaped press contact surfaces 44 having an angle of 90 degrees on the lower surface, and a semiconductor element 45 interposed between the press contact surfaces 43 and 44, respectively.
Are provided. And the anode electrode body 1
The 51 and the cathode electrode body 152 are formed of a conductive material such as copper or a nickel alloy, and are pressed in a direction to clamp the semiconductor element 45 by a press-contact mechanism 52 and a disc spring (not shown). 153 denotes a lower case 14 in which the anode electrode body 151 is fitted in the recess 149.
7 are terminal screws provided inside.

In the above configuration, heat generated when the semiconductor element 45 is operated is radiated from the anode electrode body 151 to the outside through the radiator 146 of the lower case 147 in which the semiconductor element 45 is fitted. Thereby, the semiconductor unit 150 continues to operate within the predetermined temperature range.

As a result, in this embodiment, the same operation and effect as those of the first embodiment can be obtained, and
No cooling unit is provided between the semiconductor units 150,
In addition, a simple structure without a coupling mechanism for coupling the semiconductor units 150 is provided, thereby facilitating the manufacture. In addition, since the heat radiation flow path from the semiconductor element 45 has a shape extending in a direction perpendicular to the semiconductor unit 150, the heat transfer resistance is small and the heat radiation performance is superior.

Next, a fourth embodiment will be described with reference to FIGS. FIG. 30 is a top view showing a cross section of an upper portion of the housing, and FIG. 31 is a longitudinal sectional view.

In FIGS. 30 and 31, the semiconductor device 1
An upper cover 155 made of ceramics or the like is configured to hermetically cover the upper portion of the long, substantially rectangular parallelepiped anode electrode body 156. And inside the upper cover 155,
It is in a state where nitrogen gas or inert gas is sealed or filled with a polymer resin or insulating oils and fats.

The anode electrode body 156 is formed of a conductive material such as copper or a nickel alloy, and has two press contact surfaces 157 having a sandwiching angle of 90 degrees in the upper surface longitudinal direction.
Are provided so as to form each groove wall of the V-shaped groove,
Further, four cooling holes 68 are formed along the back surface of the pressure contact surface 157, and cooling tubes 158 are attached to the cooling holes 68 so as to communicate with each other.

On the other hand, five cathode electrode members 152 having two inverted V-shaped press contact surfaces 44 having a vertical angle of 90 degrees on the lower surface.
Are mounted on the anode electrode body 156 such that the two pressure contact surfaces 44 are opposed to each other with a gap provided between the pressure contact surfaces 157. A semiconductor element 45 is sandwiched between the press contact surfaces 44 and 157. Then, the anode electrode body 156 and the cathode electrode body 152 are
2 and a disc spring (not shown) presses the semiconductor element 45 in a direction to sandwich it. Reference numeral 159 denotes a terminal screw provided on the anode electrode body 156.

In the above-described structure, heat generated when the semiconductor element 45 is operated is transferred from the anode electrode body 156 to the outside through the cooling pipe 158 by the refrigerant flowing through the cooling hole 68 formed in the semiconductor element 45. Is discharged to a cooling source (not shown). As a result, the semiconductor element 45 continues operating within the predetermined temperature range.

As a result, in this embodiment, the same operation and effect as those of the first embodiment can be obtained, and
Since the plurality of semiconductor units and the like are not connected in series, the anode electrode body 156 is not divided, and since the anode electrode body 156 also serves as a part of the housing and has a cooling hole, the semiconductor units are separated from each other. A simple structure that does not require a coupling mechanism for coupling becomes easy to manufacture.

Next, a fifth embodiment will be described with reference to FIGS. FIG. 32 is a top view showing a cross section of the upper part of the housing, and FIG. 33 is a longitudinal sectional view.

32 and 33, the semiconductor device 1
Reference numeral 60 denotes an upper plate 161 and a side plate 162 made of ceramics or the like.
, So as to hermetically cover the upper portion of the long, substantially rectangular parallelepiped anode electrode body 163. And the upper plate 161
The upper part of the anode electrode body 163 covered with the side plate 162 is filled with a nitrogen gas or an inert gas, or filled with a polymer resin or an insulating oil or fat.

The anode electrode body 163 is formed of a conductive material such as copper or a nickel alloy, and has two press contact surfaces 157 having a sandwiching angle of 90 degrees in the upper surface longitudinal direction.
Are provided so as to form each groove wall of the V-shaped groove,
Further, four cooling holes 68 are formed along the back surface of the press contact surface 157, and cooling tubes 158 are attached to the cooling holes 68 so as to communicate therewith.

On the other hand, five cathode electrode bodies 164 made of a conductive material such as copper or a nickel alloy and having two inverted V-shaped press contact surfaces 44 having a vertical angle of 90 degrees on the lower surface are connected to the two press contact surfaces 44. Are attached to the anode electrode body 163 so as to be opposed to each other with a gap provided on the press contact surface 157. A semiconductor element 45 is sandwiched between the press contact surfaces 44 and 157.

The upper plate 161 is connected to the side plate 162 by the deformation absorbing mechanism 165 such as a disc spring or rubber and the insulating member 166 disposed on the upper surface of the cathode electrode body 163. When the semiconductor element 45 is fixed with a screw or the like (not shown), the semiconductor element 45 is simultaneously pressed in the direction of nipping. Reference numeral 167 denotes a terminal screw provided on the side of the anode electrode body 163.
Reference numeral 68 denotes a terminal screw provided at the center of the upper surface of the cathode electrode body 164.

In the above configuration, heat generated when the semiconductor element 45 is operated is transferred from the anode electrode body 163 to the outside through the cooling pipe 158 by the coolant flowing through the cooling hole 68 formed in the anode element body 163. Is discharged to a cooling source (not shown). As a result, the semiconductor element 45 continues operating within the predetermined temperature range.

As a result, the same operation and effect as in the fourth embodiment can be obtained in this embodiment.

Next, a sixth embodiment will be described with reference to FIGS. FIG. 34 is a top view showing a cross section of the upper part of the housing, and FIG. 35 is a longitudinal sectional view.

In FIGS. 34 and 35, the semiconductor device 1
69 is an upper plate 161 and a side plate 162 made of ceramics or the like.
, So as to hermetically cover the upper portion of the long, substantially rectangular parallelepiped anode electrode body 170. And the upper plate 161
The upper portion of the anode electrode body 170 covered with the side plate 162 is filled with a nitrogen gas or an inert gas, or filled with a polymer resin or an insulating oil or fat.

The anode electrode body 170 is formed by joining first and second anode electrode members 171a and 171b made of a conductive material such as copper or a nickel alloy so as to sandwich the insulating member 172 in the longitudinal direction. By doing so, they are integrated. In the longitudinal direction of the upper surface of the anode electrode body 170, the angle between
The first and second press contact surfaces 157a and 157b are provided so as to be the respective groove walls of the V-shaped groove.
The four cooling holes 68 are formed along the back surfaces of the pressure contact surfaces 157a and 157b, and the cooling holes 68 are attached to communicate with the cooling pipes 158.

On the other hand, five inverted V-shaped pressure contact surfaces 44 having a vertical angle of 90 degrees on the lower surface and a narrow upper surface 173 on the upper end are formed of a conductive material such as copper or nickel alloy.
One cathode electrode body 174 is attached to the anode electrode body 170 with two press-contact surfaces 44 arranged so as to face each other with a gap between the first and second press-contact surfaces 157a and 157b. The pressing surface 44 and the first and second pressing surfaces 157
a and 157b, the semiconductor element 4
5a and 45b are clamped.

The upper plate 161 is connected to the side plate 162 by a deformation absorbing mechanism 165 such as a disc spring or rubber and an insulating member 175 disposed on the upper surface 173 of the cathode electrode body 174. The semiconductor elements 45a, 4
5b is pressed in the direction of pinching. In addition, 176 a and 176 b are terminal screws provided on the side of the anode electrode body 170.

In the above-described structure, heat generated when the semiconductor elements 45a and 45b are operated is transferred from the anode electrode 170 to the cooling pipe 158 by the refrigerant flowing through the cooling holes 68 formed in the anode. And discharged to an external cooling source (not shown). Thereby, the semiconductor element 45
The operations a and 45b continue within a predetermined temperature range.

As a result, in this embodiment, the same operation and effect as those of the fourth embodiment can be obtained, and
The present invention can be applied to various circuits by combining the semiconductor elements 45a and 45b by changing the holding direction.

Next, a seventh embodiment will be described with reference to FIGS. 36 and 37. FIG. 36 is a top view showing a cross section of the upper part of the housing, and FIG. 37 is a longitudinal sectional view.

In FIGS. 36 and 37, the semiconductor device 1
Reference numeral 77 denotes upper and lower ends of the side plate 162 made of ceramics or the like, and two long substantially rectangular parallelepiped anode electrode bodies 178, 178.
It is configured so as to be airtightly sandwiched between them. The inside surrounded by the airtight side plate 162 is filled with a nitrogen gas or an inert gas, or filled with a polymer resin or insulating oils and fats.

The anode electrode body 178 is formed of a conductive material such as copper or a nickel alloy, and has two press contact surfaces 157 having a sandwiching angle of 90 degrees on a surface extending in the longitudinal direction.
Are provided so as to form each groove wall of the V-shaped groove,
Further, four cooling holes 68 are formed along the back surface of the press contact surface 157, and cooling tubes 158 are attached to the cooling holes 68 so as to communicate therewith. The two anode electrode bodies 178, 178 are attached to the upper and lower ends of the side plate 162 so that the V-shaped grooves in which the press contact surfaces 157 are formed face each other.

On the other hand, the upper and lower five cathode electrode members 164 each having two inverted V-shaped pressure contact surfaces 44 each having an apex angle of 90 degrees and having the side on which the pressure contact surface 44 is not formed are back to back. The pressure contact surfaces 44 are arranged on the anode electrode bodies 178 and 178 provided at the upper and lower positions in opposite directions so that the pressure contact surfaces 44 are opposed to each other by providing a gap between the pressure contact surfaces 157. The deformation absorbing mechanism 16 is provided between the surfaces 179 and 179 of the cathode electrode body 164 which are back to back.
5, the semiconductor element 45 sandwiched in each gap between the press contact surface 44 and the press contact surface 157 is pressed. Reference numeral 180 denotes a connection terminal connected to the upper and lower two cathode electrode bodies 164.

In the above-described structure, heat generated when the semiconductor element 45 is operated is transferred from the anode electrode body 178 to the outside through the cooling pipe 158 by the refrigerant flowing through the cooling hole 68 formed in the anode electrode body 178. Is discharged to a cooling source (not shown). As a result, the semiconductor element 45 continues operating within the predetermined temperature range.

As a result, in this embodiment, the same operation and effect as those of the fourth embodiment can be obtained, and
Twice the number of semiconductor elements 45 can be incorporated while suppressing an increase in the device shape.

[0131]

As is apparent from the above description, according to the present invention, a plurality of semiconductor elements are provided on the electrode body corresponding to each other.
A plurality of semiconductor elements having dimensional variations in the holding direction by being configured to be held while being pressed by a pressing mechanism between a plurality of pressing surfaces having a predetermined angle with each other.
Even a child is pinched by a substantially uniform compression force.
The contact electric resistance and contact heat resistance do not vary greatly,
It is possible to obtain a semiconductor device capable of achieving high power and high-speed processing without using a large semiconductor element and without increasing the size of the device without the risk of the semiconductor element being damaged or the like. The effect of is obtained.

[Brief description of the drawings]

FIG. 1 is a front view showing a cross section of a front part of a housing in a first embodiment of the present invention.

FIG. 2 is a top view showing a cross section of an upper part of the housing in the first embodiment of the present invention.

FIG. 3 is a longitudinal sectional view of the first embodiment of the present invention.

FIG. 4 is a side view of the semiconductor unit according to the first embodiment of the present invention.

FIG. 5 is a top view of the semiconductor unit according to the first embodiment of the present invention.

FIG. 6 is a longitudinal sectional view of the semiconductor unit according to the first embodiment of the present invention.

FIG. 7 is a cross-sectional view for explaining the shape of the buffer plate of the semiconductor unit according to the first embodiment of the present invention.
FIG. 7 is a cross-sectional view of the buffer plate shown as the first embodiment,
7B is a cross-sectional view according to a first modification, FIG. 7C is a cross-sectional view according to a second modification, and FIG. 7D is a cross-sectional view according to a third modification.

FIG. 8 is a side view of the cooling unit according to the first embodiment of the present invention.

FIG. 9 is a top view of the cooling unit according to the first embodiment of the present invention.

FIG. 10 is a side view showing a first modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 11 is a top view showing a first modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 12 is a front view showing a second modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 13 is a side view showing a second modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 14 is a front view showing a third modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 15 is a side view showing a third modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 16 is a front view showing a fourth modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 17 is a longitudinal sectional view showing a fourth modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 18 is a side view showing a fifth modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 19 is a top view showing a fifth modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 20 is a side view showing a sixth modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 21 is a top view showing a sixth modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 22 is a side view showing a seventh modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 23 is a top view illustrating a seventh modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 24 is a side view showing an eighth modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 25 is a top view showing an eighth modification of the semiconductor unit according to the first embodiment of the present invention.

FIG. 26 is a front view showing a front part of a housing in a cross section in the second embodiment of the present invention.

FIG. 27 is a longitudinal sectional view of a second embodiment of the present invention.

FIG. 28 is a top view showing a cross section of the upper part of the housing in the third embodiment of the present invention.

FIG. 29 is a longitudinal sectional view of a third embodiment of the present invention.

FIG. 30 is a top view showing a cross section of the upper part of the housing in the fourth embodiment of the present invention.

FIG. 31 is a longitudinal sectional view of a fourth embodiment of the present invention.

FIG. 32 is a top view showing a cross section of an upper part of a housing in a fifth embodiment of the present invention.

FIG. 33 is a longitudinal sectional view of a fifth embodiment of the present invention.

FIG. 34 is a top view showing a cross section of the upper part of the housing in the sixth embodiment of the present invention.

FIG. 35 is a longitudinal sectional view of a sixth embodiment of the present invention.

FIG. 36 is a top view showing a cross section of the upper part of the housing in the seventh embodiment of the present invention.

FIG. 37 is a longitudinal sectional view of a seventh embodiment of the present invention.

FIG. 38 is a sectional view showing a first conventional example.

FIG. 39 is a sectional view showing a second conventional example.

[Explanation of symbols]

 26 ... Semiconductor unit 38 ... Anode electrode body 39 ... Cathode electrode body 43,44 ... Press-contact surface 45 ... Semiconductor element 52 ... Press-contact mechanism 56 ... Disc spring

Claims (7)

(57) [Claims] 1. A semiconductor device comprising: a plurality of semiconductor elements; at least one pair of electrode bodies sandwiching each of the semiconductor elements and forming an electrode portion; A semiconductor comprising: a plurality of pressure-contact surfaces provided so as to have a predetermined angle with each other; and a pressure-contact mechanism that presses these pressure-contact surfaces in the direction of clamping the semiconductor element. apparatus. 2. The method according to claim 1, wherein said plurality of press contact surfaces have an angle of 9 with each other.
2. The semiconductor device according to claim 1, wherein the angle is 0 degrees . 3. The method according to claim 1 , wherein a plurality of semiconductor elements are individually provided.
Have a predetermined angle with respect to each other.
Forming an electrode part by sandwiching it between the pressure contact surfaces
And a pair of electrode bodies of the semiconductor element by the pressure contact surface.
A semiconductor unit pressed in the clamping direction and this semiconductor
Arranged adjacent to the semiconductor unit to cool the unit
Cooling units arranged in a row and the semiconductor units
And a coupling mechanism for coupling the cooling unit and the cooling unit.
A semiconductor device. 4. An electrode formed of an insulating material.
An electrode base member and a predetermined portion formed on a surface of the electrode base member.
And a press-contact surface made of this conductive film.
4. The method according to claim 1, wherein:
Semiconductor device. 5. A semiconductor device comprising : a plurality of semiconductor elements;
Have a predetermined angle with respect to each other.
To form an electrode part between the pressure contact surfaces
An electrode body provided with a cooling hole through which a coolant flows is provided on the pressure contact surface.
A plurality of halves formed by pressing the semiconductor element in a clamping direction.
Conductor units and these semiconductor units have a predetermined form
And a coupling mechanism for arranging and coupling
A semiconductor device characterized by the following. 6. A V-shaped groove in which each groove wall forms one pressure contact surface.
For each gap between the electrode body provided with
Before forming the other pressure contact surface for holding the semiconductor element
A plurality of inverted V-shaped protrusions arranged to face the V-shaped groove
An electrode body provided with a part, and the semiconductor element
Pressing means for pressing in the direction to be clamped.
A semiconductor device characterized by the following. 7. A cooling means is provided on the electrode body having the V-shaped groove.
7. The semiconductor according to claim 6, wherein the semiconductor is provided.
apparatus.