JP3323668B2 - Method of manufacturing electron source and method of manufacturing image forming apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron source having a surface conduction electron-emitting device and a method of manufacturing an image forming apparatus such as a display device to which the electron source is applied.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitting devices, a hot cathode device and a cold cathode device, are known. Among these, as the cold cathode device, for example, a field emission type device (hereinafter referred to as FE type), a metal-insulating layer-metal type emission device (hereinafter referred to as MIM type), a surface conduction type emission device, and the like are known. .

As an example of the FE type, for example, WPDyke
& W.W.Dolan, “Field emission”, Advance in Electron P
hysics, 8, 89 (1956) or CASpindt, “Pysica
lproperties of thin-film field emission cathodes w
ith molybdenium cones ", J, Appl. Phys., 47, 52488 (1976)
Etc. are known. Further, as an example of the MIM type, for example, CAMead, “Operation of Tunnel-emission Devi
ces ", J. Appl. Phys., 32, 646 (1961).

Further, as a surface conduction type emission element, for example, MIElinson, Radio Eng. Electron Phys., 10, 1290
(1965) and other examples described later. The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current flows in a small-area thin film formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, in addition to the device using the SnO ₂ thin film by Elinson et al., The device using an Au thin film [G. Dittmer: “Thin Sloid”
Films ", 9,317 (1972)] and, In ₂ O ₃ / SnO ₂ by thin film [M.Hartwell and CGFonstad:" IEEE Trans.EDC
onf. ", 519 (1975)] and those using a carbon thin film [Hisashi Araki et al .: Vacuum, 26th, No. 1, 22 (1983)].

[0005] As a typical example of the element structure of these surface conduction electron-emitting devices, FIG. Hartwel
1 shows a plan view of an element according to the present invention. In FIG.
, A substrate; and 3004, a conductive thin film made of metal oxide formed by sputtering. The conductive thin film 3004 is formed in an H-shaped planar shape as shown. An electron emission portion 3005 is formed by performing an energization process called energization forming described later on the conductive thin film 3004. The interval L in the figure is 0.5 to 1 [mm], and W is 0.1
[Mm]. For convenience of illustration, the electron-emitting portion 3005 is shown in a rectangular shape at the center of the conductive thin film 3004, but this is a schematic one, and the actual position of the electron-emitting portion faithfully represents the shape. Not necessarily.

[0006] M. In the above-described surface conduction electron-emitting device, including the device by Hartwell et al., The conductive thin film 3004 is subjected to an energization process called energization forming before the electron emission, so that the electron emission portion 300 is formed.
It was common to form 5. In other words, the energization forming means that a constant DC voltage or a DC voltage that increases at a very slow rate of, for example, about 1 V / min is applied to both ends of the conductive thin film 3004 to energize the conductive thin film 3004. Is locally destroyed, deformed, or altered to form an electron emitting portion 3005 in a state of high electrical resistance. Note that a crack is generated in a part of the conductive thin film 3004 that is locally broken, deformed, or altered. When a convenient voltage is applied to the conductive thin film 3004 after the energization forming, electrons are emitted in the vicinity of the crack.

The above-mentioned surface conduction electron-emitting device has an advantage that a large number of devices can be formed over a large area because of its simple structure and easy manufacture. Therefore, for example, as disclosed in Japanese Patent Application Laid-Open No. 64-31332 by the present applicant, a method for arranging and driving a large number of elements has been studied. As for applications of the surface conduction electron-emitting device, for example, image forming apparatuses such as image display apparatuses and image recording apparatuses, charge beam sources, and the like have been studied.

In particular, as an application to an image display device, for example, US Pat.
As disclosed in US Pat. No. 2,575,551, an image display device using a combination of a surface conduction electron-emitting device and a phosphor that emits light by irradiation with an electron beam has been studied. An image display device using a combination of a surface conduction electron-emitting device and a phosphor is expected to have better characteristics than other conventional image display devices. For example, compared to a liquid crystal display device that has become widespread in recent years, it can be said that it is superior in that it does not require a backlight because it is a self-luminous type and that it has a wide viewing angle.

[0009]

The present inventors have attempted surface conduction type emission devices of various materials, manufacturing methods and structures, including those described in the above-mentioned conventional examples. further,
Research has been conducted on a multi-electron beam source in which a large number of surface conduction electron-emitting devices are arranged, and on an image display device using the multi-electron beam source.

The inventors have tried a multi-electron beam source by an electronic wiring method shown in FIG. That is, it is a multi-electron beam source in which a large number of surface conduction emission devices are two-dimensionally arranged and these devices are wired in a matrix as shown in the figure. In the figure, 4001 schematically shows a surface conduction electron-emitting device, 4002 shows a row direction wiring, and 4003 shows a column direction wiring. Row direction wiring 400
Although the second and column direction wirings 4003 actually have a finite electrical resistance, they are shown as wiring resistances 4004 and 4005 in the figure. The above-described wiring method is called simple matrix wiring.

Although a 6 × 6 matrix is shown for convenience of illustration, the size of the matrix is not limited to this. For example, in the case of a multi-electron beam source for an image display device, a desired image is displayed. Elements that are sufficient for displaying are arranged and wired. In a multi-electron beam source in which the surface conduction electron-emitting devices are arranged in a simple matrix wiring, an appropriate electric signal is applied to the row wiring 4002 and the column wiring 4003 in order to output a desired electron beam. For example, any one in the matrix
To drive the surface conduction electron-emitting device of a row, a selection voltage Vs is applied to the row-direction wiring 4002 of the selected row, and at the same time, the non-selection voltage Vns is applied to the row-direction wiring 4002 of the unselected row.
Is applied. In synchronization with this, a drive voltage Ve for outputting an electron beam is applied to the column wiring 4003. According to this method, if the voltage drop due to the wiring resistances 4004 and 4005 is neglected, the voltage of Ve−Vs is applied to the surface conduction type emission element of the selected row, and the surface conduction type emission element of the non-selected row is used. Is applied with a voltage of Ve−Vns. If Ve, Vs, and Vns are set to voltages of appropriate magnitudes, an electron beam of a desired intensity should be output only from the surface conduction electron-emitting device of the selected row, and a different drive voltage is applied to each of the column wirings. If Ve is applied, each of the elements in the selected row should output a different intensity electron beam. Further, since the response speed of the surface conduction electron-emitting device is high, if the length of time for applying the driving voltage Ve is changed, the length of time for outputting the electron beam should be changed.

Therefore, a multi-electron beam source in which surface conduction electron-emitting devices are arranged in a simple matrix has various applications. For example, if an electric signal corresponding to image information is appropriately applied, an electron source for an image display device can be used. Can be suitably used. However, the multi-electron beam source in which the surface conduction electron-emitting devices are arranged in a simple matrix has actually caused the following two problems.

That is, as a first problem, in the energization forming process performed during the manufacture of the surface conduction electron-emitting device, the results of the energization forming process vary from element to element. As a second problem, when driving a surface conduction electron-emitting device after manufacture to emit electrons, noise superimposed on a drive signal applied to the device deteriorates the characteristics of the device or shortens its life. Had been lost.

Hereinafter, the first problem and the second problem will be described in more detail. (First Problem) In various image forming panels to which the surface conduction electron-emitting device is applied, including the above-mentioned flat plate CRT, naturally, high-quality and high-definition images are desired. To realize this, for example, a large number of surface conduction electron-emitting devices wired in a simple matrix are used. For this reason, a very large number of element arrangements requiring several hundreds to several thousands of rows and columns are required, and it is desired that the element characteristics of each surface conduction electron-emitting element be uniform.

However, the electron emission characteristics of the surface conduction electron-emitting device may change depending on the forming conditions. Furthermore, in the case of a simple matrix wiring, a specific 1
Even if only the element is to be energized and formed, current sneak into another surface conduction electron-emitting element occurs.
Therefore, it has been extremely difficult to conduct current forming by concentrating a current for each element without affecting other unformed surface conduction electron-emitting elements. In this case, all the surface conduction electron-emitting devices cannot be energized and formed under the same conditions, resulting in a problem that the device characteristics of the surface conduction electron-emitting devices vary. (Second problem) In FIG. 41, ES is a surface conduction electron-emitting device, EC1 to ECM are column direction wiring electrodes, and ER1 to ERN are row direction wiring electrodes. In this multi-electron beam source, M × N electron-emitting devices are arranged in a matrix, and the respective devices are electrically connected by row-direction wiring electrodes and column-direction wiring electrodes to form a matrix wiring. . Note that, in this drawing, an element group arranged in parallel to the X direction is called an element row,
An element group arranged in parallel with the Y direction is called an element row. There are element rows in the first to Mth rows and element rows in the first to Nth columns.

In driving such a multi-electron beam source, it is a general method to sequentially select and drive element rows one by one. In the case of the multi-electron beam source shown in FIG. 41, it is possible to emit an electron beam only from a desired surface conduction electron-emitting device in a selected device row. This will be described with reference to FIGS.

FIG. 42 is a graph showing general characteristics of a surface conduction electron-emitting device used as an ES. The horizontal axis represents the voltage applied to the device, and the vertical axis represents the electron beam current emitted from the device. I have. Generally, an electron beam is not emitted from a device until a voltage applied to the surface conduction electron-emitting device exceeds a certain threshold voltage Vth, and an electron beam is emitted with a voltage higher than the threshold voltage Vth as the applied voltage increases. Electron beam is also increased. Therefore, although the electron beam is not emitted at VE / 2, it is easy to set the voltage VE such that the electron beam is emitted at VE. Therefore, a driving method using the voltage VE set as described above will be described.

For example, a case will be described in which the first element row in the multi-electron beam source is selected, and electron beams are emitted only from the second to fifth surface conduction type emission elements. FIG. 43 is a diagram showing a voltage applied to each wiring electrode based on this intention. As shown
Of the column direction wiring electrodes EC1 to EC6, the wiring electrode E of the first column
0 [V] is applied to C1 and VE / 2 is applied to the other EC2 to EC6.
[V] is applied. VE [V] is applied to the wiring electrodes ER2 to ER5 in the second to fifth rows of the row direction wirings ER1 to ER6.
And VE / 2 [V] is applied to ER1 and ER6. Since a voltage difference between the voltage of the connected column-direction wiring electrode and the voltage of the row-direction wiring voltage is applied to each electron-emitting device,
VE is applied to the surface conduction electron-emitting device shown in black in FIG.
VE [2] is applied to the electron-emitting devices indicated by [V] by oblique lines or stripes on the horizontal axis, and 0 [V] is applied to the surface-conduction emission devices indicated by dots. That is, a voltage VE [V] exceeding the electron emission threshold is applied to the intended electron-emitting device, and an electron beam is output.
No electron beam is output from the other surface conduction electron-emitting devices.

As exemplified above, if 0 [V] is applied to the column-direction wiring electrodes of the element rows desired to be driven, and VE / 2 [V] is applied to the column-direction wiring electrodes of the other element rows. , It is possible to select the element row to be driven. Further, among the electron-emitting devices in the selected element column, VE [V] is applied to the row-direction wiring electrode of the row from which the electron beam is to be output, and VE / V is applied to the row-direction wiring electrode of the column from which the electron beam is not output. 2
By applying [V], the intention can be achieved. In the above method, the voltage applied to the row direction wiring electrode of the row from which the electron beam is to be output is uniquely V
Since E [V] was determined, the intensity of the output electron beam was also uniquely determined to be I1, but a voltage of an appropriate magnitude was selected from the range of Vth to VE [V] in accordance with the electron emission characteristics of FIG. If selected and applied, the intensity of the output electron beam will be 0
It is also possible to control in the range of ~ I1.

Such a multi electron beam source constitutes an XY matrix type electron beam source by itself.
For example, application to a display device such as a flat panel CRT is expected. However, when the multi-electron beam source of FIG. 41 is actually driven by an electric circuit, a problem has occurred that a spike-like voltage which is not originally intended is applied to the surface conduction electron-emitting device. 44 to 4
FIG. 6 is a diagram for explaining such a problem.

First, FIG. 44 shows a typical example of an electric circuit used to drive the multi-electron beam source shown in FIG. As shown in the figure, a switching element such as a field effect transistor (FET) is connected to each wiring electrode in a totem-pole type. The circuit connected to the column-directional wiring electrodes EC1 to ECM has VE connected to the wiring electrodes.
/ 2 [V] or 0 [V], and a circuit connected to the row-directional wiring electrodes ER1 to ERN has VE [V] or VE / 2
This is a circuit for selectively applying [V]. Each FET
Gate signals GPC1-GPCM, GNC1-GNCM, GPR1
~ GPRN, GNR1 ~ GNRN by appropriately controlling
A desired voltage is selectively applied to each wiring electrode.

FIG. 45 is a view for explaining an example of an arbitrary drive pattern of the multi-electron beam source. As shown in the figure, the following description will be given by taking as an example a case where it is intended to emit an electron beam from a multi-electron beam source according to an E-shaped pattern (shown by oblique lines in the figure).
The general procedure for driving a multi-electron beam source is:
The element rows are driven one column at a time in the order of the first column, the second column, the third column,... To complete the E-shaped pattern of FIG. The temporal transition of this driving procedure is shown at 34A in FIG.

The method of applying a voltage to each wiring electrode when driving each element row is as described above.
When driving the first column, a drive voltage may be applied to each wiring electrode in exactly the same manner as described with reference to FIG. With respect to the wiring electrodes EC1 to EC4, temporal changes in the applied voltage are shown in 34B to 34I in FIG. When the voltage applied to each electron-emitting device is actually observed using an oscilloscope or the like when driven by the electric circuit of FIG. 44 according to such a procedure, a spike-shaped voltage that is not originally intended is applied. It turned out that there was a case. For example, in FIG. 44, taking the three elements indicated by A, B, and C as an example, the voltage waveforms observed for each of the three elements are 34J to 34L in FIG.
It was like. In the figure, SP (-), SP (+), SP
(N) shows a spike-like voltage that is not intended originally.

The cause of such a spike-like voltage is that the FET instantaneously malfunctions due to electric noise, and electric induction occurs due to mutual inductance between the FET and the wiring electrode. The applied voltage waveform is deformed before the electron-emitting device reaches due to the fact that the inductance, capacitance, resistance, etc. of the wiring electrodes, and the operation of the FET that drives the column wiring and the FET that drives the row wiring It is possible that the timing has shifted.

When the reverse voltage SP (−) is applied to the surface conduction electron-emitting device among the spike-like voltages, the electron emission characteristics of the device are remarkably deteriorated or instantaneously. The multi-electron beam source may be destroyed, which has been a serious problem in applying such a multi-electron beam source to a display device or the like. SUMMARY OF THE INVENTION It is an object of the present invention to provide an electron source that solves the problems of the conventional example and a method for manufacturing an image forming apparatus using the electron source.

[0026]

In order to achieve the above object, a method of manufacturing an electron source according to the present invention comprises the following steps. That is, a plurality of surface conduction electron-emitting device, is connected to the row-directional wiring and column wiring, a method of manufacturing an electron source arranged in a matrix on a substrate, the row-direction wirings and before
Non-line connected in series with conductive film between column direction wiring
Comprising a non-linear element having the form of voltage-current characteristics, through the column lines and the row-directional wiring, forming processing step of performing a forming by applying a voltage to the conductive film, of a voltage to the conductive film The application is performed via a non-linear element having a non-linear voltage-current characteristic connected in series to the conductive film.

In order to achieve the above object, a method for manufacturing an image forming apparatus according to the present invention has the following arrangement. That is,
A plurality of surface conduction electron-emitting devices are connected to the row-direction wiring and the column-direction wiring, and an electron source arranged in a matrix on a substrate, and an image is emitted by irradiation of an electron beam emitted from the electron source. A method of manufacturing an image forming apparatus having an image forming member to be formed, wherein the electron source is manufactured by the method of the present invention .

[0028]

[0029]

In the above structure, there is provided a method for manufacturing an electron source in which a plurality of surface conduction electron-emitting devices are connected to a row wiring and a column wiring and arranged in a matrix on a substrate.
Through the row wiring and the column wiring, a voltage is applied to a conductive film to perform forming, and the forming is performed by applying a voltage to the conductive film by using a non-linear circuit connected in series to the conductive film. This is performed via a non-linear element having a suitable voltage-current characteristic.

According to this manufacturing method, when forming is performed by energizing a certain conductive film, energization of the conductive film other than the conductive film is restricted by the action of the nonlinear element. Therefore, it is possible to preferably form only the desired conductive film without adversely affecting the other conductive films.

[0031]

[0032]

[0033]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the drawings. First, the surface conduction electron-emitting device used in carrying out the present invention will be described. The surface conduction electron-emitting device that can be used in the present invention is not particularly limited in material and structure, and may be, for example, one described in the prior art. However, from the viewpoints of electron emission characteristics and manufacturability, particularly preferred surface conduction electron-emitting devices have the following embodiments. (Embodiments of Preferred Surface Conduction Electron-Emitting Devices) Basic configurations of preferred surface-conduction electron-emitting devices include two types, a planar type and a vertical type. First, the planar type surface conduction electron-emitting device will be described.

FIGS. 1A and 1B are a plan view and a sectional view, respectively, showing the structure of a basic planar surface conduction electron-emitting device. The basic configuration of the element will be described with reference to FIG. In FIG. 1, 201 is a substrate, 205 and 206 are device electrodes, and 204 is a thin film 20 including an electron-emitting portion.
Reference numeral 3 denotes an electron emission unit. Note that reference numeral 202 denotes an electron emitting portion forming thin film, which is a conductive film before the electron emitting portion 203 is formed.

The material of the opposing device electrodes 205 and 206 may be any material as long as it has conductivity. For example, Ni, Cr, Au, Mo,
W, Pt, Ti, Al, Cu, metal or alloy and Pd such as _{Pd, Ag, Au, RuO 2,} Pd-Ag or the like metal or printed conductor composed of these metal oxides and glass or the like, an In ₂ Examples include transparent conductors such as O ₃ —SnO ₂ and semiconductor materials such as polysilicon.

The device electrode interval L1 is from several hundred angstroms to several hundred micrometers, and is based on photolithography technology, which is the basis of the device electrode manufacturing method, that is, the performance and etching method of the exposure machine, and the voltage applied between the device electrodes. Etc., but is preferably 1 micrometer to 10 micrometers. Element electrode length W
1. The film thickness d of the device electrodes 205 and 206 is appropriately designed in consideration of the resistance of the electrodes, the connection with the X and Y wirings described above, and the arrangement of a large number of electron sources. The thickness W1 is from several micrometers to several hundred micrometers, and the film thickness d of the device electrodes 205 and 206 is preferably from several hundred angstroms to several micrometers.

Between the opposing element electrodes 205 and 206 provided on the substrate 201 and between the element electrodes 205 and 20.
The thin film 204 including the electron-emitting portion provided on 6 includes the electron-emitting portion 203. FIG. 1B shows a case where the thin film 204 including the electron-emitting portion is provided on the device electrodes 205 and 206. However, the thin film 204 including the electron-emitting portion is not provided on the device electrodes 205 and 206. is there. That is,
This is a case where the electron emitting portion forming thin film 202 is laminated on the insulating substrate 201 and then laminated in the order of the opposing device electrodes 205 and 206.

Further, depending on the manufacturing method, the entire space between the opposing element electrode 205 and the element electrode 206 may function as an electron emitting portion. The thickness of the thin film 204 including the electron-emitting portion is from several Angstroms to several thousand Angstroms.
Preferably, the thickness is 10 Å to 200 Å, the step coverage to the device electrodes 205 and 206, the resistance value between the electron emission portion 203 and the device electrodes 205 and 206, the particle size of the conductive fine particles of the electron emission portion 203,
It is set as appropriate according to the energization processing conditions described later. The resistance value indicates a sheet resistance value of 10 ³ to 10 ⁷ Ω / □.

Specific examples of the material constituting the thin film 204 including the electron emitting portion include Pd, Ru, Ag, Au, and Pd.
Ti, In, Cu, Cr, Fe, Zn, Sn, Ta,
Metals such as W and Pb, PdO, SnO ₂ , In ₂ O ₃ , Pb
Oxides such as O and Sb ₂ O ₃ , HfB ₂ , ZrB ₂ and LaB
₆ , borides such as CeB ₆ , YB ₄ , GdB ₄ , Ti
Carbides such as C, ZrC, HfC, TaC, SiC, WC, etc., nitrides such as TiN, ZrH, HfN, semiconductors such as Si, Ge, carbon, AgMg, NiCu, Pb, Sn
These are composed of a fine particle film.

The fine particle film described here is a film in which a plurality of fine particles are aggregated, and has a fine structure not only in a state where the fine particles are individually dispersed but also in a state where the fine particles are adjacent to each other or overlap each other (an island). (Including the shape). The electron-emitting portion 203 is composed of a large number of conductive fine particles having a particle size of several Angstroms to several thousand Angstroms, preferably 10 Angstroms to 200 Angstroms. It depends on the manufacturing method and is set as appropriate. It is the same as part or all of the elements of the material constituting the thin film 204 including the electron-emitting portion. <Basic Manufacturing Method> Various methods are conceivable as a method of manufacturing the surface conduction electron-emitting device having the electron-emitting portion 203. One example is shown in FIG. Reference numeral 202 denotes a thin film for forming an electron emitting portion, for example, a fine particle film.

Hereinafter, the manufacturing method will be described step by step with reference to FIGS. 1) After sufficiently cleaning the substrate 201 with a detergent, pure water, and an organic solvent, depositing element electrode materials by vacuum evaporation technique, sputtering method, or the like, then depositing the element electrodes 205 and 206 on the surface of the substrate 201 by photolithography technique. It is formed (FIG. 2A). 2) An organometallic solution is applied between the device electrodes 205 and 206 provided on the substrate 201 and on the substrate on which the device electrodes 205 and 206 are formed and left to form an organometallic thin film. . In addition, the organic metal solution refers to the Pd, Ru, Ag, Au, Ti, In, Cu,
This is a solution of an organic compound containing a metal such as Cr, Fe, Zn, Sn, Ta, W, and Pb as a main element. Thereafter, the organic metal thin film is heated and baked, and is patterned by lift-off, etching, or the like, to form a thin film 202 for forming an electron-emitting portion (FIG. 2B).

Here, the coating method of the organic metal solution is used, but the coating method is not limited to this. Vacuum evaporation method, sputtering method, chemical vapor deposition method, dispersion coating method, dipping method, spinner method, etc. In some cases. 3) Subsequently, an energization process called forming is performed.
Here, when a voltage is applied between the device electrodes 205 and 206 by a power supply (not shown) using a pulse-like voltage, an electron emitting portion 203 having a changed structure is formed at the portion of the thin film 202 for forming an electron emitting portion. (FIG. 2 (c)).

By this energization process, the thin film 202 for forming the electron emission portion is locally broken, deformed or deteriorated. Such a part whose structure has been changed by the forming is called an electron emission part 203. As described above, the present applicant has observed that conductive fine particles are present in the vicinity of the electron-emitting portion 203. FIG. 3 shows a voltage waveform in the forming process.

In FIG. 3, T1 and T2 are the pulse width and pulse interval of the voltage waveform, T1 is 1 microsecond to 10 milliseconds, T2 is 10 microseconds to 100 milliseconds, and the peak value of the triangular wave (at the time of forming). The peak voltage) was appropriately selected within a range of about 4 V to 10 V, and the forming process was appropriately performed within a vacuum atmosphere for about several tens of seconds. When forming the above-described electron-emitting portion, the forming process is performed by applying a triangular wave pulse between the electrodes of the element. However, the waveform applied between the electrodes of the element is not limited to the triangular wave, and the waveform is not limited to the triangular wave. A desired waveform such as a wave may be used. Further, the crest value, pulse width, pulse interval, and the like are not limited to the above-mentioned values, and desired values can be selected as long as the electron-emitting portion is formed well.

In the surface conduction electron-emitting device in which the conductive fine particles are dispersed in advance, a part of the basic device structure and the basic manufacturing method may be changed. Next, a vertical surface conduction electron-emitting device, which is another preferred structure of the surface conduction electron-emitting device, will be described.
FIG. 4 is a view showing a basic configuration of a vertical surface conduction electron-emitting device. In FIG. 4, reference numeral 251 denotes a substrate;
5, 256 are device electrodes, 254 is a thin film including an electron emitting portion, 253 is an electron emitting portion, and 257 is a step forming portion.
Note that the position of the electron emitting portion 253 varies depending on the thickness and manufacturing method of the step forming portion 257, the thickness of the thin film 254 including the electron emitting portion, the manufacturing method, and the like, and is limited to the position shown in FIG. is not.

The substrate 251, the device electrodes 255 and 256, the thin film 254 including the electron-emitting portion, and the electron-emitting portion 253 are made of the same material as the above-mentioned flat surface conduction electron-emitting device. Therefore, here, the step forming portion 257 and the thin film 254 including the electron emitting portion, which characterize the vertical surface conduction electron emitting device, will be described in detail. The step forming portion 257 is made of an insulating material such as SiO ₂ formed by a vacuum deposition method, a printing method, a sputtering method, or the like. The thickness of the step forming portion 257 corresponds to the device electrode interval L1 of the flat surface conduction electron-emitting device described above, and is from several hundred angstroms to several tens of micrometers. Step forming section 25
The thickness of 7 is set by the manufacturing method of the step forming portion 257 and the voltage applied between the device electrodes, and is preferably 10 micrometers to 1,000 angstroms.

Since the thin film 254 including the electron-emitting portion is formed after the device electrodes 255 and 256 and the step forming portion 257 are formed, the thin film 254 is stacked on the device electrodes 255 and 256. Further, the thickness of the thin film 254 including the electron-emitting portion often differs between the thickness at the step portion and the thickness of the portion stacked on the element electrodes 255 and 256 depending on the manufacturing method. Generally, the thickness of the step portion is small. As a result, compared to the above-mentioned flat surface conduction electron-emitting device, the current is easily subjected to the energization treatment, and the electron-emitting portion 253 is often formed.

The preferred embodiment of the surface conduction electron-emitting device has been described above. Next, a preferred embodiment of the present invention that solves the above-described (first problem) will be described with reference to Embodiments 1 to 6. These embodiments relate to a method of manufacturing an electron source in which a plurality of surface conduction electron-emitting devices are arranged in a matrix, in particular, a forming method, in which an electron emission portion of a surface conduction electron-emitting device is formed. In the conductive film before being performed, an element having a configuration in which non-linear elements having non-linear voltage-current characteristics are connected in series is arranged in a state where the elements are electrically connected to the wiring in the row direction and the wiring in the column direction, By applying a forming voltage to the element having the conductive film to be subjected to the forming process through the row-direction wiring and the column-direction wiring connected to the element and the non-linear element of the element, each conductive element is formed. The membrane can have uniform switching characteristics. This is because the connected nonlinear element acts so as to cut off the forming voltage, so that the forming voltage is not applied to the conductive film of another element. [Embodiment 1] FIG. 5 is a block diagram showing a schematic configuration of an electric circuit for performing forming in this embodiment.

In FIG. 5, reference numeral 14 denotes a surface conduction electron-emitting device which forms a thin film including an electron-emitting portion by performing a forming process on the thin film for forming an electron-emitting portion (inside 14). It is. The surface conduction electron-emitting devices 14 have an M × N matrix arrangement. 1
Reference numeral 8 denotes a diode element, which is connected in series with the surface conduction electron-emitting device 14. The electron source element 1 is formed by the surface conduction electron-emitting device 14 and the diode element 18. The electron source elements 1 are arranged on an M × N matrix, and constitute an electron source 3 (hereinafter, referred to as an electron source 3) having a large number of surface conduction electron-emitting elements 14. Reference numeral 4 denotes a pulse generation power supply which generates a forming pulse.

Reference numerals 5 and 6 denote switching circuits, and reference numeral 7 denotes a control circuit. The switching circuit 5 has a terminal D in the row direction.
A switch element for switching between application of a forming pulse from the pulse generation power supply 4 to Y1 to DYn and a floating state, and a switch for selecting a row direction terminal DY1 to DYn for selecting an element to be formed. And an element. The switching circuit 6 is composed of a switch element for switching between connecting the terminals DY1 to DYm in the column direction to the ground and setting the terminals in a floating state.
Further, the switching circuits 5 and 6 can select a plurality of terminals simultaneously. Further, the control circuit 7 controls the switching operation of the switching circuits 5 and 6 and the pulse generation timing of the pulse generation power supply 4.

First, a method of selecting the surface conduction electron-emitting device 14 to be formed will be described with reference to FIGS. FIG. 6 is a diagram in which a 6 × 6 matrix is extracted from all the matrices of the electron source 3. For convenience of description, D (1,1), D (1, 1) is used to distinguish each surface conduction electron-emitting device.
The position is indicated by (X, Y) coordinates such as (1, 2) or D (6, 6).

For example, when forming the surface conduction electron-emitting device of D (3, 2) in FIG. 6, first, the terminal DX 3 is connected to the ground by the switching circuit 6 under the control of the control circuit 7. Terminals are floating. Further, the terminal DY2 is connected to the pulse generation power supply 4 by the switching circuit 5. In this way,
A forming pulse is applied between terminals DY2 and DX3.
At this time, the current does not flow to the other elements because the diode element 18 provided in series with the surface conduction type emission element 1 becomes reverse biased or becomes a floating terminal side and does not occur. Therefore, since a forming pulse can be individually applied to each of the electron-emitting-portion-forming thin films (inside), uniform forming can be performed in units of one element.

Furthermore, the forming range can be changed to some extent freely, such as forming in units of one line element or several line elements within the allowable range of the current capacity and forming in a certain range. From this, it is also possible to generate elements having different forming conditions for each location or element. Next, the electron source 3 of this embodiment will be further described.

FIG. 7 shows a plan view of a part of the electron source 3.
FIG. 8 is a sectional view taken along the line AA ′ in the figure. 9 and 10 show a process for manufacturing the electron source 3 of the present embodiment.
Shown in In FIG. 7, reference numeral 12 denotes an X-direction wiring;
It is composed of n wirings X1 to DXn. Reference numeral 13 denotes a Y-direction wiring, which is composed of m wirings DY1 to DYm.

FIG. 8 is a schematic sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device as an electron-emitting device is formed on an N-type silicon substrate on which a diode is formed. 8, 101 is an N-type silicon substrate,
Reference numeral 12 denotes an X-direction wiring, and 13 denotes a Y-direction wiring. In the surface conduction electron-emitting device 14, a thin film including an electron-emitting portion is formed by performing a forming process on the thin film for forming the electron-emitting portion.

A p-well diffusion layer 102 is partially formed on an N-type silicon substrate 101. Around the p-well layer 102, ap ⁺ layer 103 electrically connected to the anode electrode 110 of the diode is formed. Further, an n ⁺ layer electrically connected to the cathode electrode 111 of the diode and an n layer are formed. On top of these diode structures is Si
The anode electrode 1 is covered with an insulating layer 106 made of O _2.
10 and the cathode electrode 111 have aluminum wiring 1 respectively.
13, 114 are connected.

The diode is formed between the anode electrode 110 and the cathode electrode 111,
Is electrically connected to the electrode 116 of the surface conduction electron-emitting device 14 by the aluminum wiring 113. The other electrode 117 of the surface conduction electron-emitting device 14 is electrically connected to the Y-direction wiring 13 by the aluminum wiring 120.
The cathode electrode 111 of the diode is connected to the aluminum wiring 1
14 electrically connects to the X-direction wiring 12.

Next, an example of a manufacturing process of the functional element having the structure shown in FIG. 8 will be described with reference to FIG. FIG. 9 is a schematic cross-sectional view for explaining an example of this manufacturing process.
In the first step (see (1) in FIG. 9), an N-type silicon substrate 101 is prepared. Second step (see FIG. 9 (2))
Then, an insulating layer 118 of SiO2 is coated on the N-type silicon substrate 101, and a pattern is formed using a photoresist.

In a third step (see (3) in FIG. 9), a desired region of the silicon substrate 101 is doped with a P-type impurity (conductivity-type controlling substance) to form a p-well layer 102. In the fourth step (see (4) in FIG. 9), ap ⁺ layer, an n layer, and an n ⁺ layer are formed in the p well layer to form a diode element. In a fifth step (see (5) in FIG. 9), the insulating layer 108 made of an inorganic oxide substance, SiO ₂ , is coated and patterned on the semiconductor structure formed in the above steps.

In the sixth step (see (6) in FIG. 9), the anode electrode 110, the cathode electrode 111, and the Y-direction electrode 13 are arranged in the patterned region of the SiO ₂ layer. In a seventh step (see (7) in FIG. 10), an insulating layer 119 of an inorganic oxide substance, SiO ₂ , is further coated thereon and patterned. The SiO ₂ insulating layer 119 functions as an insulating layer of each part of the diode and also serves as a base layer for forming a surface conduction electron-emitting device and a wiring electrode.

In the eighth step (see (8) in FIG. 10),
An aluminum wiring 113 for electrically connecting the anode electrode 110 of the diode and the electrode 116 of the surface conduction electron-emitting device; an aluminum wiring 114 for electrically connecting the cathode electrode 111 and the X-directional wiring 12; Direction wiring 1
Aluminum wiring 120 for electrically connecting 3 to electrode 117 of the surface conduction electron-emitting device is arranged.

In the ninth step (see (9) of FIG. 10),
The X-direction wiring 12 is formed so as to be electrically connected to the aluminum wiring 114. In the above-described steps, a silicon substrate is used to form a diode. However, the present invention is not limited to this. For example, a Ga-As substrate may be used. In the tenth step (see (10) in FIG. 10), the surface conduction electron-emitting device 14 is formed. Next, a method for forming the surface conduction electron-emitting device 14 will be described in detail with reference to FIG.

FIG. 11 shows a part of a plan view of a mask of a thin film for forming an electron-emitting portion for forming the surface-conduction electron-emitting device 14 in this step. This mask has an inter-element gap G and an opening in the vicinity thereof, and a Cr film (not shown) having a thickness of 10 Å is deposited and patterned by vacuum evaporation. Then, organic Pd is spin-coated thereon by a spinner, and then heated and baked at 300 ° C. for 10 minutes to form a thin film of Pd for forming an electron emission portion. The thin film for forming an electron emitting portion formed in this manner is composed of Pd
And the thickness is 100
Angstrom and sheet resistance were 5 × 10 ⁴ Ω / □. In addition, 15b and 15c are element electrodes, respectively.

The fine particle film described here is a film in which a plurality of fine particles are aggregated as described above. The fine structure thereof is not limited to a state in which the fine particles are dispersed and arranged here,
Also refers to a film in which fine particles are adjacent to each other or overlapped (including islands). The particle diameter refers to the diameter of the fine particles whose particle shape can be recognized in the above state. Cr
The desired pattern is formed by wet-etching the film (not shown) and the fired thin film for forming an electron-emitting portion with an acid etchant. The surface conduction electron-emitting device 14 is formed by performing the above-described forming process on the electron-emitting-portion-forming thin film thus formed.

By the steps described above, X
The directional wiring 12, the interlayer insulating layer 106, the Y-directional wiring 13, the element electrodes 116 and 117, the thin film 14 for forming the electron-emitting portion, the diode element 18 and the like are formed to form a simple matrix wiring substrate of the surface conduction electron-emitting element. (See FIG. 18). Note that the above process is an example using a technique such as thin film, photolithography, and etching. However, the present invention is not limited to this. For example, printing that is a wiring forming technique may be used, or other various techniques may be used. good.

The materials of the respective members also have a certain degree of freedom. For example, the wiring material may be any material that is usually used as an electrode material, such as Au, Ag, Cu, Al, Ni, W, Ti,
Cr and the like. In addition to MgO in the interlayer insulating layer 106 is also a silicon oxide _{film, TiO 2, Ta 2 O 5} , Al 2 O 3 and these laminates, the mixture of time and the like. The element electrodes may be made of other conductive materials other than the above-mentioned wiring materials.

Next, an example in which the above-described manufacturing method is applied to the manufacture of an image forming apparatus will be described. Referring to FIG. 12, an electron source 3 (corresponding to 271 in FIG. 12) having a large number of planar surface conduction electron-emitting devices is mounted on a rear plate 2.
After being fixed on the substrate 81, a face plate 286 (formed by forming a fluorescent film 284 and a metal back 285 on the inner surface of a glass substrate 283) is disposed via a support frame 282, for example, 5 mm above the substrate 271. . Frit glass is applied to the joint between the face plate 286, the support frame 282, and the rear plate 281 and sealed by heating in air or nitrogen atmosphere. The fixing of the substrate 11 to the rear plate 281 is also performed with frit glass. Reference numeral 274 denotes an electron source element including a surface conduction electron-emitting device and a diode device. Also, 272,
273 is an X direction wiring and a Y direction wiring, respectively.

The fluorescent film 284 is made of only a fluorescent material in the case of monochrome, but in this embodiment, the fluorescent material adopts a stripe shape, a black stripe is formed first, and red, green, and blue are formed in the gaps. A phosphor is applied to form a phosphor film 284. As a material for the black stripe, a material mainly containing graphite, which is generally used, is used. In this embodiment, a slurry method was used as a method of applying the phosphor on the glass substrate 283. A metal back 285 is usually provided on the inner surface side of the fluorescent film 284. The metal back 285 is manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then vacuum-coating A1.

The face plate 286 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 284 in order to further increase the conductivity of the fluorescent film 284. In this embodiment, however, only a metal back is used. Omitted because sufficient conductivity was obtained. Furthermore, when the above-mentioned sealing is performed, in the case of color, the phosphors of each color and the electron-emitting devices must be associated with each other, so that sufficient alignment is performed.

The atmosphere in the glass container constructed as described above is evacuated by a vacuum pump through an exhaust pipe (not shown) to reach a sufficient degree of vacuum, and then the terminals DOX1 to DOXm and DOY1 to DOY1 to outside the container are reached. A voltage is applied between the device electrodes of the electron-emitting device 1 through DOYn, and the above-described forming process is performed on the thin film 14 for forming the electron emission to form an electron-emitting device having an electron-emitting portion. That is, the forming process is executed by connecting the switching circuits 5 and 6 of FIG. 5 and each of the terminals outside the container.

The voltage waveform in the forming process is as shown in FIG. 3 described above. In this embodiment, the following conditions were used. Referring to FIG. 3, T1 and T2 are the pulse width and pulse interval of the voltage waveform, T1 is 1 millisecond, T2 is 10 milliseconds, and the peak value (peak voltage during forming) of the triangular wave is 5 V; Forming process is about 1 × 10
Performed in a vacuum atmosphere of ^-6 torr for 60 seconds. The electron-emitting portion thus prepared was in a state in which fine particles containing palladium as a main component were dispersed and arranged, and the fine particles had an average particle size of 30 angstroms.

Next, after the forming of all the surface conduction electron-emitting devices is completed, the exhaust pipe (not shown) is welded by heating with a gas burner at a degree of vacuum of about 1 × 10 ⁻⁶ Torr, and the surroundings are formed. The vessel was sealed. Finally, a getter process was performed to maintain the degree of vacuum after sealing. In this process, immediately before sealing, a getter disposed at a predetermined position (not shown) in the image forming apparatus was heated by a heating method such as high-frequency heating to form a deposited film. The getter was mainly composed of Ba or the like.

In the image forming apparatus of the present embodiment configured as described above, each of the electron-emitting devices has a terminal D outside the container.
A scanning signal and a modulation signal are applied by X1 to DXm and DY1 to DYn by a signal generation unit (not shown) to emit electrons, and a metal back 285 or a transparent electrode (not shown) is applied through a high voltage terminal Hv. , A high voltage of several kV or more is applied to accelerate the electron beam, collide with the fluorescent film 284, and excite and emit light to form an image.

The outline steps described above are necessary for manufacturing an image forming apparatus. However, for example, detailed parts such as materials of each member are not limited to those described above. Needless to say, it is appropriately selected as appropriate. As described above, according to this embodiment, a non-linear element exhibiting a non-linear voltage-current characteristic such as a diode characteristic or an MIM characteristic is added in series to the surface conduction electron-emitting device wired in a simple matrix. When a reverse voltage is applied or a low voltage is applied, the characteristics of the nonlinear element through which almost no current flows through the surface conduction type electron-emitting device cause another surface conduction type when a specific surface conduction type electron-emitting device is energized. Flow into the electron-emitting device is prevented. That is, in a forming process required for manufacturing a multi-electron source in which surface conduction electron-emitting devices are arranged in a simple matrix wiring, it is possible to form only one specific device.

As described above, according to the forming method of the present embodiment, when forming a large number of surface-conduction type electron-emitting devices wired in a simple matrix, (1) the element to be formed is selected and formed. (2) Partial forming such as line forming and selection surface forming can be performed, and a large current does not need to flow through the wiring. (3) Partial forming is possible, so that the whole is uneven or uniform. In addition, such an effect can be obtained that forming can be performed (that is, forming can be performed on desired elements under desired forming conditions). [Second Embodiment] In a second embodiment, a method for further stabilizing the method shown in the first embodiment (see FIG. 8) will be described.

FIG. 13 shows an N in which a diode is formed.
FIG. 2 is a schematic cross-sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device as an electron-emitting device is formed on a silicon substrate. The difference from the first embodiment is that an isolation layer 130 is formed. In FIG. 13, 1
01 is an N-type silicon substrate, 12 is an X-direction wiring, 13 is Y
Directional wiring. The surface conduction electron-emitting device 14 is formed by performing a forming process on a thin film for forming an electron-emitting portion, and includes a thin film including an electron-emitting portion.

A p-well diffusion layer 102 is formed in a part of the N-type silicon device 101. Around the p-well layer 102, an n ⁺ layer electrically connected to the anode electrode 111 of the diode and an n layer are formed. Further, an isolation layer 130 is formed around the diode. The upper portions of these diode structures are covered with an insulating layer 106 made of SiO ₂ , and the anode electrode 110 and the cathode electrode 111 are provided with aluminum wirings 113 and 1, respectively.
14 are connected.

The diode is formed between the anode electrode 110 and the cathode electrode 111, and is connected to the anode electrode 110.
Is electrically connected to the electrode 116 of the surface conduction electron-emitting device 14 by the aluminum wiring 113. The other electrode 117 of the surface conduction electron-emitting device 14 is electrically connected to the Y-direction wiring 13 by the aluminum wiring 120.
Further, the cathode electrode 111 of the diode is electrically connected to the X-directional wiring 12 by the aluminum wiring 114.

The manufacturing process has been described in the first embodiment.
In a third step, a desired region of the silicon substrate 101 is doped with a P-type impurity (conductivity-type controlling substance) to form a p-well layer 1.
After the formation of No. 02, the n ⁺ layer 130 may be formed around the p-well layer as an isolation layer for isolating the diode operation from the others. By forming the isolation layer 130 as described above, a more stable diode operation can be ensured by electrically separating the diode cell from other cells. Third Embodiment In the first and second embodiments, the electron source integrated circuit in which the surface conduction electron-emitting device is formed is an integrated circuit formed on an N-type silicon substrate. 1 shows an example of forming an integrated circuit on a substrate.

FIG. 14 shows a P in which a diode is formed.
FIG. 2 is a schematic cross-sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device as an electron-emitting device is formed on a silicon substrate. In FIG. 14, reference numeral 301 denotes a P-type silicon substrate, 12 denotes an X-direction wiring, and 13 denotes a Y-direction wiring. The surface conduction electron-emitting device 14 is formed by performing a forming process on a thin film for forming an electron-emitting portion, and includes a thin film including an electron-emitting portion. On a part of the P-type silicon substrate 301,
An N well diffusion layer 302 is formed. n-well layer 3
An n ⁺ layer 303 electrically connected to the anode electrode 310 of the diode is formed around the element 02. In addition, p is electrically connected to the cathode electrode 311 of the diode.
^{A +} layer and a p layer are formed.

The upper part of these diode structures is SiO
Covered with an insulating layer 306 made of _2, the anode electrode 31
0, the cathode electrode 311 has an aluminum wiring 31
3, 314 are connected. The diode is formed between the anode electrode 310 and the cathode electrode 311, and the anode electrode 310 is electrically connected to the electrode 316 of the surface conduction electron-emitting device 14 by the aluminum wiring 313. The other electrode 31 of the surface conduction electron-emitting device 14
7 is electrically connected to the Y-directional wiring and the X-directional wiring 12 by the aluminum wiring 320.

Next, FIGS. 15 and 16 are schematic cross-sectional views illustrating the manufacturing steps of the functional element having the structure shown in FIG. Hereinafter, a method of forming an electron source integrated circuit in which the surface conduction electron-emitting device of Embodiment 3 is formed will be described with reference to FIGS.
6 will be described. In the first step (see (1) in FIG. 15), a P-type silicon substrate 301 is prepared.

In the second step (see (2) of FIG. 15),
An insulating layer 118 of SiO2 is formed on a P-type silicon substrate 301.
And a pattern is formed using a photoresist. In the third step (see (3) in FIG. 15), a desired region of the silicon substrate 301 is doped with an n-type impurity (conductivity-type controlling substance) to form an n-well layer 302.

In the fourth step (see (4) in FIG. 15),
An n ⁺ layer, a p layer, and a p ⁺ layer are formed in the n well layer to form a diode element. In the fifth step (see (5) in FIG. 15), the insulating layer 308 made of an inorganic oxide substance, SiO ₂ , is coated and patterned on the semiconductor structure formed in the above steps.

In the sixth step (see (6) of FIG. 15),
The anode electrode 310, the cathode electrode 311 and the Y-direction electrode 13 are arranged in the patterned region of the SiO ₂ layer. In a seventh step (see (7) in FIG. 16), an insulating layer 319 of SiO ₂ of an inorganic oxide substance is further coated thereon and patterned. The SiO ₂ insulating layer 319 functions as an insulating layer of each part of the diode and also serves as a base layer for forming a surface conduction electron-emitting device and a wiring electrode.

In the eighth step (see (8) in FIG. 16),
An aluminum wiring 313 for electrically connecting the anode electrode 310 of the diode and the electrode 316 of the surface conduction electron-emitting device; an aluminum wiring 314 for electrically connecting the cathode electrode 311 and the X-directional wiring 12; Direction wiring 1
An aluminum wiring 320 for electrically connecting the electrode 3 to the electrode 317 of the surface conduction electron-emitting device is arranged.

In the ninth step (see (9) in FIG. 16),
The X-direction wiring 12 is formed so as to be electrically connected to the aluminum wiring 314. In the above-described steps, a silicon substrate is used to form a diode. However, the present invention is not limited to this. For example, a Ga-As substrate may be used. In the tenth step (see (10) in FIG. 16), the surface conduction electron-emitting device 14 is formed. Fourth Embodiment Next, in a fourth embodiment, a method for further stably operating the electron source integrated circuit having the surface conduction electron-emitting device shown in the third embodiment (see FIG. 14) will be described.

FIG. 17 shows a P in which a diode is formed.
FIG. 2 is a schematic cross-sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device as an electron-emitting device is formed on a silicon substrate. The difference from the third embodiment is that an isolation layer 330 is formed. In FIG. 17, 3
01 is a P-type silicon substrate, 12 is an X-direction wiring, 13 is Y
Directional wiring. The surface conduction electron-emitting device 14 is formed by performing a forming process on a thin film for forming an electron-emitting portion, and includes a thin film including an electron-emitting portion.

An n-well diffusion layer 302 is formed in a part of a P-type silicon substrate 301. Around the n-well layer 302, an n ⁺ layer 303 electrically connected to the anode electrode 310 of the diode is formed. In addition, a p ⁺ layer and an n layer electrically connected to the cathode electrode 311 of the diode are formed. Further, an isolation layer 330 is formed around the diode.

The upper part of these diode structures is SiO
Covered with an insulating layer 306 made of _2, the anode electrode 31
0, the cathode electrode 311 has an aluminum wiring 31
3, 314 are connected. The diode is formed between the anode electrode 310 and the cathode electrode 311, and the anode electrode 310 is electrically connected to the electrode 316 of the surface conduction electron-emitting device 14 by the aluminum wiring 313. The other electrode 31 of the surface conduction electron-emitting device 14
7 is electrically connected to the Y-directional wiring 13 by an aluminum wiring 320. In addition, the cathode electrode 31 of the diode
1 is electrically connected to the X-directional wiring 12 by an aluminum wiring 314.

As a manufacturing process, in the third step described in the second embodiment, a desired region of the silicon substrate 301 is doped with an N-type impurity (conductivity type controlling substance), and the n-well layer 30 is formed.
2 is formed, and ap ⁺ layer 3 is formed around the n-well layer as an isolation layer for isolating the diode operation from the others.
Form 30. As described above, the isolation layer 3
By forming 30, a more stable diode operation can be guaranteed by electrically separating the diode cell from other cells.

In the above description, the electron source cell of this embodiment is formed on a silicon substrate. However, the present invention is not limited to the silicon substrate, and may be, for example, germanium or gallium arsenide. . Further, the case where the electron source cells are arranged in a matrix has been described above. However, the configuration is not limited to the matrix. Needless to say, the rectifying action of the diode facilitates forming control.

When the diode and the surface conduction electron-emitting device are formed on the silicon substrate of this embodiment to form an electron source, not only the electron source section but also the switching circuit and the driving circuit described above. Can be formed on the same silicon substrate, and the size of the device can be further reduced. [Embodiment 5] Next, an amorphous element is used as a nonlinear element.
An example using a diode made of silicon will be described. This embodiment is different from the first to fourth embodiments in that a glass plate is used as a substrate, and thus has an advantage that a large area and cost can be reduced.

FIG. 18 is a plan view of a part of the electron source.
FIG. 19 is a sectional view taken along the line AA ′ in the figure. FIG. 2 is a diagram showing a process for manufacturing the electron source of this embodiment.
0 (a) to FIG. 20 (j). In FIG. 18, 41
Reference numeral 2 denotes an X-direction wiring, which is composed of n wirings DX1 to DXn. Reference numeral 413 denotes a Y-direction wiring, which is DY1 to DY.
and m wirings.

In FIG. 19, 411 is an insulating substrate made of glass, 412 is an X-direction wiring, and 413 is a Y-direction wiring. Reference numeral 414a is a thin film for forming an electron-emitting portion,
By performing the forming process, a thin film including an electron-emitting portion is formed, and the surface-conduction electron-emitting device 414 is obtained.
415a to 415c are device electrodes, 416 is an interlayer insulating layer,
417 is a contact hole for making an electrical connection between the element electrode 415a and the X-direction wiring 412. 418 is a diode element, and 419 and 420 are contact holes for electrically connecting the diode element 418 to the element electrodes 415b and 415c.

Next, a method of manufacturing the electron source of this embodiment is shown in FIG.
0 (a) to FIG. 20 (j), a detailed description will be given in the order of steps. [Step-a] (Refer to FIG. 20 (a)) On a substrate 411 made of cleaned soda-lime glass, a 50 Å thick Cr,
Au having a thickness of 6000 Å is sequentially laminated.
Thereafter, a photoresist (manufactured by AZ1370 Hoechst) is spin-coated with a spinner and baked. Thereafter, the photomask image is exposed and developed to form a resist pattern of the X-direction wiring 412, and the Au / Cr deposited film is wet-etched to form the X-direction wiring 412 having a desired shape.

[Step-b] (See FIG. 20B) Next, an interlayer insulating layer 416 made of a 0.8 μm thick silicon oxide film is deposited by RF sputtering. [Step-c] (see FIG. 20C) The silicon oxide film (the interlayer insulating layer 41) deposited in the step-b
6) Amorphous-Si having a thickness of 5000 Å is deposited thereon by a plasma CVD method, and a diode element 418 is formed by an ion implantation method.

[Step-d] (see FIG. 20D) Further, an interlayer insulating layer 416 made of a 0.8 μm thick silicon oxide film is deposited by RF sputtering. [Step-e] (see FIG. 20E) The silicon oxide film (interlayer insulating layer 4) deposited in steps-b and d
16) A photoresist pattern for forming the contact holes 417, 419 and 420 is formed, and the interlayer insulating layer 416 is etched using the photoresist pattern as a mask to form the contact holes 417, 419 and 420. For etching, for example, RIE (Reactive) using CF4 and H2 gas is used.
Ion Etching) method.

[Step-f] (Refer to FIG. 20 (f)) Thereafter, a pattern to be the element electrode 415a to 415c and the gap G between the element electrodes is formed by a photoresist (RD-20).
00N-41: manufactured by Hitachi Chemical Co., Ltd., and a 50 Å thick Ti and a 10 Å thick Ni are sequentially deposited by a vacuum deposition method. The photoresist pattern is dissolved with an organic solvent, the Ni / Ti deposited film is lifted off, and the device electrodes 415a to 415a having a device electrode gap G are formed.
415c is formed. Here, the gap G between the device electrodes was 2 μm.

[Step-g] (Refer to FIG. 20 (g)) After forming a photoresist pattern of a Y-directional wiring on the device electrode 415c, a 50 angstrom thick Ti,
Au having a thickness of 5000 A is sequentially vacuum-deposited, and unnecessary portions are removed by lift-off to form a Y-direction wiring 413. [Step-h] (see FIG. 20 (h)) Next, using the mask of the electron-emitting-portion-forming thin film 414a shown in FIG. A Cr film 21 having a thickness of 10 angstroms is deposited and patterned by vacuum evaporation. Then, an organic Pd (ccp4230 manufactured by Okuno Pharmaceutical Co., Ltd.) is spin-coated thereon by a spinner, and then heated and baked at 300 ° C. for 10 minutes to form an electron emission portion forming thin film 41 made of Pd.
4a is formed. The electron-emitting-portion-forming thin film 414a thus formed was composed of fine particles containing Pd as a main element, and had a thickness of 100 angstroms and a sheet resistance of 5 × 10 ⁴ Ω / □. The fine particle film described here is a film in which a plurality of fine particles are aggregated as described above, and has a fine structure not only in a state in which the fine particles are individually dispersed and arranged, but also in a state where the fine particles are adjacent to each other, or
It refers to a film in an overlapped state (including an island shape), and the particle diameter refers to the diameter of the fine particles whose particle shape can be recognized in the above state.

[Step-i] (see FIG. 20 (i)) Cr film 421 and fired thin film 41 for forming electron-emitting portion
4a is wet-etched with an acid etchant to form a desired pattern. The surface conduction electron-emitting device 414 is formed by performing the above-described forming process on the thus formed electron-emitting-portion-forming thin film 414a.

[Step-j] (See FIG. 20 (j)) A pattern is formed such that a resist is applied to portions other than the contact holes 417, and 50 Å thick Ti and 1.1 μm thick Au are formed by vacuum evaporation. Are sequentially deposited. Unnecessary portions are removed by lift-off to bury the contact holes 417.

Through the above steps, the X-directional wiring 412, the interlayer insulating layer 416, the Y-directional wiring 413, the device electrodes 415a to 415c, the electron emitting portion forming thin film 414,
The diode element 418 and the like are formed, and a simple matrix wiring substrate of the surface conduction electron-emitting device is formed. Note that the above process is an example using a technique such as thin film, photolithography, and etching. However, the present invention is not limited to this. For example, printing as a wiring forming technique may be used, or other various techniques may be used. .

The materials of the respective members also have a certain degree of freedom. For example, the wiring material may be any material that is usually used as an electrode material, such as Au, Ag, Cu, Al, Ni, W, Ti, C
r and the like. In addition to _{MgO, TiO 2, Ta 2 O} 5, Al 2 O 3 and these laminates of interlayer insulating layer 16 is also a silicon oxide film, and a mixture thereof. For the device electrodes 415a to 415c, other conductive materials may be used in addition to the above-described wiring materials.

It is needless to say that the method of this embodiment is also effective when applied to an image display device as in the first embodiment. [Embodiment 6] Next, an example in which a diode made of polysilicon is used as a nonlinear element will be described. In this embodiment, a glass substrate can be used similarly to the fifth embodiment, so that it is easy to increase the area and reduce the cost. Further, since a diode capable of flowing a large current can be made smaller than a case where amorphous silicon is used as a material, the diodes can be arranged at a finer pitch.

The electron source of the present embodiment has a plane shape substantially equal to that of the fifth embodiment, so that a plan view is omitted and a cross section is shown in FIG. FIG. 21 is a schematic cross-sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device as an electron-emitting device is formed on a glass substrate 511 on which a diode is formed.

In the figure, reference numeral 511 denotes a glass substrate;
Reference numeral 2 denotes an X-direction wiring, and 513 denotes a Y-direction wiring. 514a
Is a thin film for forming an electron-emitting portion, and a thin film including an electron-emitting portion is formed by performing a forming process, and becomes a surface conduction electron-emitting device 514. Polysilicon 602 which is a P-well diffusion layer is formed on a glass substrate.
Around the P well layer 602, ap ⁺ layer 603 electrically connected to the anode electrode 610 of the diode is formed. Further, an n ⁺ layer electrically connected to the cathode electrode 611 of the diode and an n layer are formed.

The upper part of these diode structures is made of SiO
₂ covered with an insulating layer 606 made of
0, the cathode electrode 611 has aluminum wiring 61
3, 615 are connected. The diode is formed between the anode electrode 610 and the cathode electrode 611, and the anode electrode 610 is electrically connected to the electrode 616 of the surface conduction electron-emitting device 514 by the aluminum wiring 613. The other electrode 617 of the surface conduction electron-emitting device 514 is connected to the Y-direction wiring 513 by the aluminum wiring 620.
Is electrically connected to The cathode electrode 611 of the diode is connected to the X-direction wiring 51 by the aluminum wiring 614.
2 is electrically connected.

Next, FIGS. 22 (1) to 22 (9) correspond to FIG.
FIG. 2 is a schematic cross-sectional view for illustrating a manufacturing process of the electron source with the functional element of the present embodiment having the structure shown in FIG. First, in the step of FIG. 22A, an amorphous silicon film 620 is formed on a cleaned glass substrate 511 by RF magnetron sputtering. Next, in the step of FIG. 22B, the amorphous silicon film 620 is irradiated with an Ar laser at room temperature to such an extent that melting does not occur, and polycrystalline to form a polysilicon film 621.

In the step of FIG. 22C, the silicon substrate 6
P-type impurity (conductivity type dominated material) is doped in a desired region of 01, to form a p-well layer 602, in the step of FIG. 22 (4), in the p-well layer, p ⁺ layer, n A layer and an n ⁺ layer are formed to form a diode element. Further, in the step of FIG. 22 (5), after Au / Cr is sequentially laminated on the glass substrate 511 by vacuum deposition, a photoresist (manufactured by AZ1370 Hoechst) is spin-coated with a spinner and baked. Exposure, development,
A resist pattern for the lower wiring is formed, and the Au / Cr deposition film is wet-etched to form a lower wiring 512.

In the step of FIG. 22 (6), an interlayer insulating layer 606 made of a silicon oxide film was deposited by RF sputtering, and a contact hole was formed by photoresist and etching (RIE). In the step of FIG. 22 (7), the aluminum wiring 613 for electrically connecting the anode electrode 610 of the diode and the electrode 616 of the surface conduction electron-emitting device, and the cathode electrode 611 and the X-direction wiring 512 are electrically connected. Wiring 614 for wiring, and aluminum wiring 620 for electrically connecting the Y-direction wiring 513 and the electrode 617 of the surface conduction electron-emitting device are patterned with a photoresist, deposited by vacuum evaporation, and formed by lift-off. I do.

Next, similarly, in the step of FIG.
The X-direction wiring 512 is changed to the aluminum wiring 614 by Au / Ti.
It is formed so as to be electrically connected to. In the step of FIG. 22 (9), a surface conduction electron-emitting device 514 is formed. Regarding the method of forming the surface conduction electron-emitting device 514,
The description is omitted because it is the same as the fifth embodiment.

Also in this embodiment, after the diode is formed, the surface conduction electron-emitting device is connected through the diode.
By performing the energization forming, it was possible to make the characteristics of many surface conduction type emission elements uniform. It is also very effective when applied to the manufacture of image display devices,
It was possible to improve the uniformity of display luminance.

The preferred embodiment of the present invention capable of solving the above-mentioned (first problem) has been described. next,
Preferable examples in which the above-mentioned (second problem) has been solved by implementing the present invention will be described in Examples 7 to 8. [Embodiment 7] Fig. 23 is a circuit diagram showing an example of a method of driving an electron source. A substrate (SUB) in the figure includes a surface conduction electron-emitting device (ES) and a diode device (D) in a matrix. It is formed in a shape. Note that such an electron source can be easily formed by using any of the methods described in the first to sixth embodiments.

In the driving method according to the present invention, the driving voltage applied to the surface conduction electron-emitting device is a diode device (D).
A diode element (D) that acts in the forward direction on the rectification characteristics of (1) is disposed. That is, in the present embodiment, the diode element (D) provided in series with the surface conduction electron-emitting device as shown in the figure is connected such that the cathode faces the row wiring and the anode faces the column wiring. I have.

Further, reference numeral 701 denotes a scanning circuit 702, which is a modulation circuit. The scanning circuit 701 is connected to the row wiring of the electron source via terminals DX1 to DXm, and the modulation circuit 702 is connected to terminals DY1 to DY1.
It is connected to the column wiring of the electron source via DYn.
The output units of the scanning circuit 701 and the modulation circuit 702 are:
For example, as shown in FIG. 24, a switching element (FET)
Are connected in a totem pole type, and the gates of each FET (GPC1-GPCM, GNC1-GNCM, GPR1-G
PRN, GNR1 to GNRN). Incidentally, reference numeral 712 denotes a row direction wiring, and 713 denotes a column direction wiring.

According to this configuration, when a driving voltage as illustrated in FIG. 43 is applied, the driving voltage of the surface conduction electron-emitting device acts on the diode element (D) in the forward direction, but the spike It acts in the opposite direction on the noise SP (-). Therefore, the voltage waveform applied to the surface conduction electron-emitting device by the action of the diode element (D) is exemplified by, for example, 25A, 25B, and 25C in FIG. (Note that these graphs correspond to 34 in FIG. 46.
It corresponds to the voltage waveforms of J, 34K, and 34L. That is, according to the present embodiment, since no spike noise SP (-) is applied to each surface conduction electron-emitting device, phenomena such as characteristic deterioration and destruction of the surface conduction electron-emitting device, which have conventionally been problems, occur. And succeeded in greatly extending the life of the multi-electron source.

Incidentally, instead of the scanning circuit 701 in FIG. 24,
For example, a circuit having the configuration shown in FIG. 26 can be used. That is, for each row direction wiring, one switching element for controlling whether or not to connect to the ground level is provided.
It is provided individually. Since the diode element connected in series with the surface conduction type emission element prevents the current from flowing around, only the scanning row is connected to the ground level,
Such a circuit can also be used because other rows can perform predetermined scanning even in a floating state. Even in such a circuit, a noise prevention effect can be obtained. According to this configuration, compared to the scanning circuit of FIG.
There is an advantage that the number of switching elements can be reduced to half.

Next, an example in which the above-described driving method capable of preventing noise is applied to an image forming apparatus will be described. When applied to an image forming apparatus, for example, a display panel was created by the method described in the first embodiment, and a circuit as exemplified below was added thereto. FIG. 27 is a block diagram showing a schematic configuration of a drive circuit for performing television display based on an NTSC television signal.
1 is the display panel, 902 is a scanning circuit,
903 is a control circuit, 904 is a shift register, 905 is a line memory, 906 is a synchronization signal separation circuit, 907 is a modulation signal generator, and Vx and Va are DC voltage sources.

Hereinafter, the function of each part will be described. First, the display panel 901 is connected to an external electric circuit via terminals Dx1 to Dxm, terminals Dy1 to Dyn, and a high voltage terminal Hv. Among them, terminals Dx1 to Dxm are provided with a multi-electron beam source provided in the display panel, that is, a group of surface conduction type emission elements arranged in a matrix of M rows and N columns, one row (N element) at a time. A scanning signal for sequentially driving is applied. On the other hand, to the terminals Dy1 to Dyn, a modulation signal for controlling the output electron beam of each element of the one row of surface conduction electron-emitting devices selected by the scanning signal is applied. The high voltage terminal Hv is connected to the DC voltage source Va by, for example, 10K.
A DC voltage of [V] is supplied, which is an accelerating voltage for applying sufficient energy to the electron beam output from the surface conduction electron-emitting device to excite the phosphor.
Next, the scanning circuit 902 will be described. The circuit has M switching elements inside (in the figure,
S1 to Sm), each switching element is connected to the output voltage of the DC voltage source Vx or 0 [V].
(Ground level) and is electrically connected to the terminals Dx1 to Dxm of the display panel 901. Each of the switching elements S1 to Sm is
Although it operates based on the control signal TSCAN output from the control circuit 903, in practice, it can be easily configured by combining switching elements such as FETs.

In the case of the present embodiment, the DC voltage source Vx is controlled based on the characteristics of the surface conduction electron-emitting device.
It is set to output a constant voltage of [V]. Also,
The control circuit 903 has a function of matching the operation of each unit so that appropriate display is performed based on an image signal input from the outside. Based on the synchronization signal Tsync sent from the synchronization signal separation circuit 906 described below, each control signal of Tscan, Tsft, and Tmry is generated for each unit. The timing of each control signal will be described later in detail with reference to FIG.

A synchronizing signal separating circuit 906 separates a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside. As is well known, a frequency separating (filter) is used. If a circuit is used, it can be easily configured. The synchronization signal separated by the synchronization signal separation circuit 906 is composed of a vertical synchronization signal and a horizontal synchronization signal as is well known, but is shown here as a Tsync signal for convenience of explanation. On the other hand, the luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience, and the signal is input to the shift register 904.

The shift register 904 is for serially / parallel converting the DATA signal input serially in time series for each line of an image, and is based on a control signal Tsft sent from the control circuit 903. Works. (That is, the control signal Tsft may be rephrased as a shift clock of the shift register 904.)
The data of one line of the serial / parallel-converted image (corresponding to the drive data of N electron-emitting devices)
The shift register 904 outputs as N parallel signals Id1 to Idn.

The line memory 905 is a storage device for storing data for one line of an image for a required time, and stores the contents of Id1 to Idn as appropriate according to a control signal Tmry sent from the control circuit 903. The stored contents are output as I'd1 to I'dn,
It is input to modulation signal generator 907.

A modulation signal generator 907 is a signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices in accordance with each of the image data I'd1 to I'dn. The voltage is applied to the surface conduction electron-emitting devices in the display panel 901 through the terminals Dy1 to Dyn. As the modulation signal generator 907, a pulse generator of a pulse width modulation type which generates a pulse of a constant voltage and appropriately modulates the length of the pulse according to input data, or a voltage pulse of a constant length is used. It is possible to use a voltage modulation method that modulates the peak value of the voltage pulse appropriately according to the generated data.

The function of each unit shown in FIG. 27 has been described above. Before proceeding to the description of the overall operation, the operation of the display panel 901 will be described in more detail with reference to FIGS. For convenience of illustration, the number of pixels of the display panel is described as 6 × 6 (that is, M = N = 6), but it goes without saying that the display panel 901 actually used has a much larger number of pixels. No.

FIG. 28 shows a multi-electron beam source in which surface conduction electron-emitting devices in which diode elements are connected in series in a 6 × 6 matrix are arranged in a matrix.
In order to distinguish each element, the position is indicated by (X, Y) coordinates such as D (1, 1), D (1, 2) or D (6, 6). When an image is displayed by driving such a multi-electron beam source, a method of forming an image in a line-sequential manner using one line of the image parallel to the X axis as a unit is adopted. In order to drive the electron-emitting device corresponding to one line of the image, 0 [V] is applied to the terminal of the row corresponding to the display line among Dx1 to Dx6, and 7 to the other terminals.
[V] is applied. In synchronization with this, a modulation signal is applied to each terminal of Dy1 to Dy6 according to the image pattern of the line.

For example, a case where an image pattern as shown in FIG. 29 is displayed will be described. For convenience of explanation,
The luminance of the light emitting portion of the image pattern is equal, for example, 100
It is assumed to be equivalent to [Foot Lambert]. In the display panel 901, conventionally known P-22 is used as the phosphor, the acceleration voltage is set to 10 K [V], the repetition frequency of the screen display is set to 60 [Hz], and the surface conduction of the characteristics as the electron-emitting device is performed. A type emission element was used.
In order to obtain a luminance of 00 [Foot Lambert], 14 [V] for 10 micro [seconds] is required for the element corresponding to the luminescent pixel.
Was suitably applied. (Note that this numerical value should be changed if each parameter is changed.) Therefore, an example will be described in which the image of FIG. 29 is, for example, during the period of emitting the third line. FIG.
Is a terminal D while emitting the third line of the image.
It shows voltage values applied to the multi-electron beam source through x1 to Dx6 and terminals Dy1 to Dy6. As is apparent from FIG. 6, D (2,3), D (3,
3), D (4,3) has 14
While [V] is applied to output an electron beam, 7 [V] (elements indicated by oblique lines in the figure) or 0 [V] (elements indicated by blank areas in the figure) is applied to the elements other than the above three elements. However, since this is lower than the threshold voltage of electron emission, no electron beam is output from these elements.

In the same manner, the other lines are shown in FIG.
The multi-electron beam source is driven in accordance with the display pattern of FIG. 9, and this state is shown in time series in FIG.
It is a time chart. As shown in the figure, one screen is displayed by sequentially driving one line at a time from the first line. By repeating this at a speed of 60 screens per second, an image without flicker is displayed. Display was possible.

By connecting the diode element in series with the surface conduction electron-emitting device, it is possible to cut a noise component having a characteristic reverse to the rectification direction of the diode element from among noise components superimposed on the scanning signal or the modulation signal. It is possible. Further, when changing the light emission luminance of the display pattern, the terminals Dy1 to Dy6 are used to increase (decrease) the luminance.
The modulation can be performed by making the length of the pulse of the modulation signal applied to the pulse longer (shorter) than 10 microseconds or by making the voltage peak value of the pulse larger (smaller) than 14 [V]. is there.

The method of driving the display panel 901 has been described by taking a 6 × 6 multi-electron beam source as an example. Next, the overall operation of the apparatus of FIG. 27 will be described with reference to the timing chart of FIG. I do. In FIG. 32, (1) shows the timing of the luminance signal DATA separated from the externally input NTSC signal by the synchronization signal separation circuit 906. As shown in FIG. And the third line, and in synchronization with this, the control circuit 903 sends a shift clock Tsf to the shift register 904 as shown in FIG.
t is output.

When data for one line is accumulated in the shift register 904, a memory write signal Tmry is output from the control circuit 903 to the line memory 905 at the timing shown in FIG. Drive data for the elements) is written. As a result, the line memory 90
5, the contents of the output signals I'd1 to I'dn change at the timing shown in FIG.

On the other hand, the content of the control signal TSCAN for controlling the operation of the scanning circuit 902 is as shown in FIG. That is, when driving the first line, only the switching element S1 in the scanning circuit 902 is 0 [V], the other switching elements are 7 [V], and when driving the second line, switching is performed. The operation is controlled such that only the element S2 is 0 [V], the other switching elements are 7 [V], and so on.

In synchronization with this, the modulation signal generator 90
7 to the display panel 901 at the timing shown in FIG. With the operation described above, television display can be performed using the display panel 901. In the above description,
Although not particularly described, the shift register 904 and the line memory 905 may be of a digital signal type or an analog signal type. In other words, if the serial / parallel conversion and storage of the image signal are performed at a predetermined speed. good.
When a digital signal type is used, the output signal DATA of the synchronizing signal separation circuit 906 needs to be converted into a digital signal. This can be easily achieved by providing an A / D converter at the output of the 906. Needless to say,

Further, in this embodiment, an example has been shown in which television display is performed based on an NSTC television signal, but the application of the display panel of the present invention is not limited to this. It can be widely used for other types of television signals, or for display devices that are directly or indirectly connected to various image signal sources such as computers, image memories, and communication networks. It is suitable for displaying a screen. [Embodiment 8] FIGS. 33 and 34 show a part of a schematic configuration of driving an electron source when an MIM element is connected instead of the diode element of the seventh embodiment. Power direction wiring electrodes EC1 to ECM, column direction wiring electrode ER1
To ERN and switching element for applying driving voltage (FE
T) is the same as that described above. In this figure,
The MIM element is provided in series with each electron-emitting device.
As shown in FIG. 35, the voltage / current characteristic of this MIM element has a characteristic that changes abruptly from the threshold voltage Vmim.

Therefore, by the operation of the MIM element, the voltage waveform applied to each electron-emitting device is as shown by 36A, 36B, and 36C in FIG. (Each graph corresponds to the voltage waveforms of 34J, 34K, and 34L in FIG. 46).
It is possible to prevent application of a noise component superimposed on the above-described scanning signal or modulation signal having a threshold voltage Vmin or less of the element.

Further, the electron source of this embodiment will be described. FIG. 37 shows a cross-sectional view of a part of the electron source. FIG. 38 is a diagram showing a process for manufacturing the electron source of this embodiment. 37 to 38, the same components are denoted by the same reference numerals. FIG. 37 is a schematic cross-sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device as an electron-emitting device and an MIM device are formed on a glass substrate 721.

In the figure, reference numeral 721 denotes a glass substrate;
2 is a row direction wiring electrode, and 723 is a column direction wiring electrode.
Reference numeral 724a denotes a thin film for forming an electron-emitting portion, and a thin film including an electron-emitting portion is formed by performing a forming process.
The surface conduction electron-emitting device 724 is obtained. Next, FIG.
(1) to FIG. 38 (7) are schematic cross-sectional views illustrating the steps of manufacturing the electron source with the MIM element of the present embodiment having the structure shown in FIG.

First, in the step of FIG. 38 (2), after Au / Cr is sequentially laminated on the glass substrate 721 by vacuum deposition, a photoresist (manufactured by AZ1370 Hoechst) is spin-coated with a spinner and baked. The photomask image is exposed and developed to form a resist pattern for the column wiring, and the Au / Cr deposited film is wet etched to form the column wiring 722.

In the step of FIG. 38C, an interlayer insulating layer 806 made of a silicon oxide film was deposited by RF sputtering, and a contact hole was formed by photoresist and etching (RIE). Next, in the step of FIG. 38 (4), an aluminum wiring 812 for electrically connecting the column direction wiring 722 and the electrode 817 to the surface conduction electron-emitting device is formed.
And electrodes 81 on the MIM element 800 and the surface conduction type emission element.
An aluminum wiring 813 for electrically connecting the wiring 6 is formed by vacuum evaporation and photolithography.

In the step of FIG. 38 (5), the Ta thin film 801 is formed.
Is formed by sputtering, and the Ta thin film 801 is anodized to form a thermally oxidized Ta ₂ O ₅ film 802.
By continuously sputtering a Cr thin film and an ITO thin film,
By forming the / ITO electrode 803, an MIM element is formed. In the step of FIG. 38 (6), an aluminum wiring 814 for connecting the electrode 803 of the MIM element 800 and the row wiring 722 is formed by vacuum evaporation and photolithography, and then the row wiring 722 is formed.

Then, in the step of FIG. 38 (7), a surface conduction electron-emitting device is formed. The forming method is the same as that of the first embodiment. The present invention may be applied to a system including a plurality of devices or to an apparatus including a single device. Needless to say, the present invention can be applied to a case where the present invention is achieved by supplying a program to a system or an apparatus.

[0143]

As described above, according to the present invention, when forming a surface conduction electron-emitting device, it is possible to minimize the variation in device operation characteristics.
Further, when performing the forming, it is possible to preferably form only the desired conductive film without adversely affecting other conductive films.

[0144]

[Brief description of the drawings]

FIG. 1 is a schematic plan view (a) and a cross-sectional view (b) of a planar type surface conduction electron-emitting device according to a preferred embodiment for carrying out the present invention.

FIG. 2 is a process chart showing a method for manufacturing a planar type surface conduction electron-emitting device according to a preferred embodiment.

FIG. 3 is a diagram showing an example of a voltage waveform applied to an element in a forming process at the time of manufacturing a planar type surface conduction electron-emitting element according to a preferred embodiment.

FIG. 4 is a perspective view of a vertical surface conduction electron-emitting device as another preferred embodiment for carrying out the present invention.

FIG. 5 is a diagram showing an example of a forming method of a surface conduction electron-emitting device according to the present invention and an example of a device configuration used for forming.

FIG. 6 is a circuit configuration diagram of a multi-electron source according to one embodiment of the present invention.

FIG. 7 is a plan view of a multi-electron source according to an embodiment of the present invention.

FIG. 8 is a sectional view of a multi-electron source according to an embodiment of the present invention.

FIG. 9 is an explanatory diagram of a manufacturing process of the nonlinear element portion of the multi-electron source according to one embodiment of the present invention.

FIG. 10 is an explanatory diagram of a manufacturing process of a surface conduction electron-emitting device portion of the multi-electron source according to one embodiment of the present invention.

FIG. 11 is a view of a mask used for manufacturing the embodiment of the present invention.

FIG. 12 is a diagram illustrating an example of a display panel of an image forming apparatus embodying the present invention.

FIG. 13 is a cross-sectional view of one embodiment according to the present invention in which an isolation layer is provided around a nonlinear element.

FIG. 14 is a sectional view of an embodiment of the present invention using a P-type silicon substrate.

FIG. 15 is an explanatory diagram of a manufacturing process of a non-linear element portion of a multi-electron source according to one embodiment of the present invention using a P-type silicon substrate.

FIG. 16 is an explanatory view of a manufacturing process of a surface conduction electron-emitting device portion of the multi-electron source according to the embodiment of the present invention using a P-type silicon substrate.

FIG. 17 is a sectional view of an embodiment of the present invention using a P-type silicon substrate provided with an isolation layer around a nonlinear element.

FIG. 18 is a plan view of a multi-electron source using a diode made of amorphous silicon as a nonlinear element.

FIG. 19 is a cross-sectional view of a multi-electron source using a diode made of amorphous silicon as a nonlinear element.

FIG. 20 (a) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of amorphous silicon as a nonlinear element.

FIG. 20 (b) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of amorphous silicon as a nonlinear element.

FIG. 20 (c) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of amorphous silicon as a nonlinear element.

FIG. 20 (d) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of amorphous silicon as a nonlinear element.

FIG. 20 (e) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of amorphous silicon as a nonlinear element.

FIG. 20 (f) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of amorphous silicon as a nonlinear element.

FIG. 20 (g) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of amorphous silicon as a nonlinear element.

FIG. 20 (h) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of amorphous silicon as a nonlinear element.

FIG. 20 (i) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of amorphous silicon as a nonlinear element.

FIG. 20 (j) is a view illustrating a step of the method for producing a multi-electron source using a diode made of amorphous silicon as a nonlinear element.

FIG. 21 is a cross-sectional view of a multi-electron source using a diode made of a polycrystalline silicon material as a nonlinear element.

FIG. 22 (1) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of a polycrystalline silicon material as a nonlinear element.

FIG. 22 (2) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of a polycrystalline silicon material as a nonlinear element.

FIG. 22 (3) is a view illustrating a step of the method for manufacturing a multi-electron source using a diode made of a polycrystalline silicon material as the nonlinear element.

FIG. 22 (4) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of a polycrystalline silicon material as a nonlinear element.

FIG. 22 (5) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of a polycrystalline silicon material as a nonlinear element.

FIG. 22 (6) is a view illustrating a step of the method for producing a multi-electron source using a diode made of a polycrystalline silicon material as the nonlinear element.

FIG. 22 (7) is a process diagram illustrating a method for manufacturing a multi-electron source using a diode made of a polycrystalline silicon material as a nonlinear element.

FIG. 22 (8) is a view illustrating a step of the method for manufacturing a multi-electron source using a diode made of a polycrystalline silicon material as the nonlinear element.

FIG. 23 is a simplified circuit diagram for explaining a driving method and device according to an embodiment of the present invention.

FIG. 24 is a diagram showing one embodiment of a drive circuit.

FIG. 25 is a graph showing voltage waveforms to show the effect of the embodiment according to the present invention.

FIG. 26 is a diagram illustrating another example of the drive circuit.

FIG. 27 is a diagram illustrating an example of a circuit configuration when applied to a television display device.

FIG. 28 is a circuit diagram of a multi-electron source of a television display device.

FIG. 29 is a diagram illustrating an example of a pattern of a display image.

30 is a diagram showing a voltage applied to a multi-electron source to display the display pattern of FIG. 29.

FIG. 31 is a graph showing a voltage applied to the multi-electron source for displaying the display pattern of FIG. 29;

FIG. 32 is a graph showing operation timing of each unit of the television display device of FIG. 27.

FIG. 33 is a simplified circuit diagram for explaining a driving method and apparatus of an embodiment using an MIM type element as a nonlinear element.

FIG. 34 is a diagram illustrating an example of a drive circuit when an MIM-type element is used as a nonlinear element.

FIG. 35 is a graph showing current / voltage characteristics of the MIM element used in the example.

FIG. 36 is a graph for explaining the effect of the embodiment when an MIM type element is used as a nonlinear element.

FIG. 37 is a partial cross-sectional view of an example of an electron source using an MIM type element as a nonlinear element.

FIG. 38 (1) is a diagram illustrating a manufacturing process of an example of the electron source using the MIM type element as the nonlinear element.

FIG. 38 (2) is a diagram illustrating a manufacturing process of an example of the electron source using the MIM type element as the nonlinear element.

FIG. 38 (3) is a diagram illustrating a manufacturing step of the example of the electron source using the MIM type element as the nonlinear element.

FIG. 38 (4) is a diagram illustrating a step of manufacturing the embodiment of the electron source using the MIM element as the nonlinear element.

FIG. 38 (5) is a diagram illustrating a manufacturing step of an example of the electron source using the MIM element as the nonlinear element.

FIG. 38 (6) is a diagram illustrating a manufacturing step of the example of the electron source using the MIM element as the nonlinear element.

FIG. 38 (7) is a diagram illustrating a manufacturing step of the example of the electron source using the MIM type element as the nonlinear element.

FIG. 39 is a plan view of a conventionally known surface conduction electron-emitting device.

FIG. 40 is a diagram showing an example of a wiring method for a surface conduction electron-emitting device.

FIG. 41 is a schematic diagram showing how each part in FIG. 40 is called;

FIG. 42 is a diagram showing a typical example of electron emission characteristics of a surface conduction electron-emitting device.

FIG. 43 is a diagram showing an example of a driving voltage application pattern.

FIG. 44 illustrates an example of a drive circuit.

FIG. 45 is a diagram illustrating an example of a drive pattern.

FIG. 46 is a timing chart showing an example of a drive voltage waveform.

──────────────────────────────────────────────────続 き Continued on the front page (31) Priority claim number Japanese Patent Application No. 6-260055 (32) Priority date October 25, 1994 (Oct. 25, 1994) (33) Priority claim country Japan (JP) (72) Inventor Eiji Yamaguchi 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Toshihiko Takeda 3-30-2 Shimomaruko 3-chome, Ota-ku, Tokyo Inside Canon Inc. (72) Invention Person Hiroaki Tojima 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Asahi Suzuki 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor outside Yasuyuki 3-30-2 Shimomaruko, Ota-ku, Tokyo Within Canon Inc. (56) References JP-A-63-187279 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01J 9/02 H01J 1/316

Claims (13)

(57) [Claims] 1. A method of manufacturing an electron source, wherein a plurality of surface conduction electron-emitting devices are connected to a row-direction wiring and a column-direction wiring, and are arranged in a matrix on a substrate. Between the conductive film and the column-directional wiring.
Non-linear element with non-linear voltage-current characteristics connected in a column
Comprising a child, through the column lines and the row-directional wiring, forming processing step of performing a forming by applying a voltage to the conductive film, the application of a voltage to the conductive film, the conductive film A method for manufacturing an electron source, wherein the method is performed via a non-linear element having a non-linear voltage-current characteristic connected in series. 2. The method according to claim 1, wherein the non-linear element is a backflow prevention element. 3. The method according to claim 1, wherein the non-linear element is a rectifying element. 4. The method according to claim 1, wherein the non-linear element is an element having a diode characteristic. 5. The method according to claim 4, wherein the element having the diode characteristic is an amorphous silicon diode. 6. The element having the diode characteristics is a polysilicon diode.
3. The method for manufacturing an electron source according to claim 1. 7. The method according to claim 4, wherein the element having the diode characteristic is a single crystal silicon diode. 8. The method according to claim 1, wherein the non-linear element is an MIM element. Wherein said surface conduction electron-emitting device, the arranged conductive film between the electrodes, any one of the preceding claims, characterized in that an element having a local high-resistance portions
Item 14. The method for producing an electron source according to Item 1 . 10. The method according to claim 9, wherein the forming step includes a step of forming a local high-resistance portion in the conductive film. 11. A plurality of surface conduction electron-emitting devices are connected to a row wiring and a column wiring, and are arranged in rows and columns on a substrate; and an electron beam emitted from the electron source. a manufacturing method of an image forming apparatus and an image forming member for forming an image by irradiation, the electron source includes a feature in that it is manufactured by the method according to any one of claims 1 to 8 Of manufacturing an image forming apparatus. 12. The image forming apparatus according to claim 11, wherein the surface conduction electron-emitting device is a device having a locally high resistance portion in a conductive film disposed between electrodes. Manufacturing method. 13. The method according to claim 12, wherein the forming step includes a step of forming a local high-resistance portion in the conductive film.