JP3319231B2 - Test equipment for semiconductor modules - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor module test apparatus used for measuring dynamic characteristics such as switching time and short-circuit tolerance of a semiconductor module having a built-in MOS transistor.

[0002]

2. Description of the Related Art A conventional test apparatus of this type will be described with reference to FIGS. FIG. 4 shows a circuit component 101 of a semiconductor module 100 to be tested, which is a MOSFET.
An emitter of the MOSFET 101a and a collector of the MOSFET 101b are connected to form a series circuit, and a main circuit terminal is formed by a collector terminal C1 of the MOSFET 101a and an emitter terminal E2 of the MOSFET 101b. C2E1, an emitter terminal E1F from the MOSFET 101a, an emitter terminal E2F from the MOSFET 101b, respectively.
A diode D1 is connected to the diode 101a and a diode D2 is connected to the MOSFET 101b in anti-parallel. G1 is a gate terminal of the MOSFET 101a,
2 is a gate terminal of the MOSFET 101b.

FIG. 5 is an external view of a semiconductor module 100 incorporating the circuit of FIG. 4, in which mounting holes 102a, 102b, 102c and 102d are provided in a case 102.

FIG. 6 is a circuit diagram in which the semiconductor module 100 is connected to a test apparatus 200, where 201 is a single-phase AC power supply,
202, a rectifier unit; 203, a voltage regulator for adjusting the output voltage of the rectifier unit 202 to a predetermined constant voltage;
Is an electrolytic capacitor charged by the output voltage of the voltage regulator 203; 205 and 206 are cables for connecting the terminal voltage of the electrolytic capacitor 204 between the main circuit terminal collector C1 and the emitter E2 of the semiconductor module 100; 207 is a test load; 208 to 211 are cables connecting the test load 207 between the main circuit terminal collector C1 and the emitter E2 of the semiconductor module 100 and to the output electrode C2E1; 212 is a switch for switching connection of the load; A current detector 214 composed of a well-known CT for detecting a collector current IC flowing through a current 205, that is, a main circuit current, and 214 is a gate G of the MOSFET 101a
1 and a gate drive circuit 215 connected to the emitter terminal E1F, and a gate drive circuit 215 connected to the gate G2 of the MOSFET 101b and the emitter terminal E2F.
Is between the gates G1, G2 of the semiconductor module 100 and the emitter terminals E1F, E2F, the collector C1 and the emitter E2.
Switch 217, 21 to output electrode C2E1
8 for measuring the gate-emitter voltage VGE, the collector-emitter voltage VCE, and the current detected by the current detector 213 using oscilloscopes connected to the current detector 213 via the reference numeral 8.

The cables 205, 206, 208 to
The connection of the semiconductor module 100 to the terminal 210 is fixed by screws (not shown).

[0006] The conventional test apparatus is configured as described above.
For example, in a switching test (turn-on, turn-off time measurement), a gate-emitter voltage VGE and a collector current IC are measured, and a short-circuit SOA test, a reverse bias S
Measures collector current IC, collector-emitter voltage VCE and gate-emitter voltage VGE in OA test
I do.

The cables 205, 206, 208-
The terminal 210 is connected to the terminal of the semiconductor module 100 with a screw.

[0008]

In the conventional test apparatus as described above, since the connection to the terminals of the semiconductor module such as the power supply and the gate drive circuit is a screw, it takes time to connect and disconnect the semiconductor module to and from the test apparatus. In addition to the poor workability of the test work and poor productivity, surge voltage is generated when the semiconductor module is turned off and the MOSFET built in the semiconductor module is destroyed due to the inductance generated in the cable. was there.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and it simplifies connection and detachment of a semiconductor module to and from a test apparatus and improves workability of test work, that is, productivity only. It is another object of the present invention to reduce inductance generated in a cable connected to a semiconductor module of a device under test, and to prevent damage due to a surge voltage when the semiconductor module is turned off.

[0010]

SUMMARY OF THE INVENTION A semiconductor module test apparatus according to the present invention includes a semiconductor module support for supporting and positioning a semiconductor module, one end of which is connected to a power supply with an insulating plate interposed therebetween, and one end of which is connected to a power supply. A pair of power supply lead plates and a test load are connected to side surfaces of the main circuit terminals of the semiconductor module, and the test load is connected to the main circuit terminals. A load probe pin facing the other side, a test probe pin facing the input terminal of the semiconductor module and the main circuit terminal, and the main circuit on one side of the power supply lead plate by pressing the semiconductor module. A terminal is provided with the load probe pin and the test probe pin on the other side of the power supply lead plate, and the input terminal is provided with the test probe pin. Bupin those having a pressing unit for respectively pressing a.

Further, as another invention, the probe pins are individually movable in both the press-contact direction and the counter-press direction, and are individually press-contacted.

[0012]

According to the semiconductor module test apparatus thus constructed, the semiconductor module is supported by the semiconductor module support, and the semiconductor module is connected to the test apparatus only by pressing the semiconductor module with the press unit. You. Thereafter, the semiconductor module is turned on and off by a signal from a well-known gate drive circuit connected to the semiconductor module, and a so-called operation such as a switching test (turn-on and turn-off time measurement), a short-circuit SOA test, a reverse bias SOA test, and the like. A characteristic test is performed.

According to another aspect of the present invention, since the probe pins are movable in the pressure contact direction and the counter pressure contact direction with respect to the pressure contact target portion, the pressure contact of each of the probe pins is ensured.

[0014]

【Example】

Embodiment 1 FIG. FIG. 1 is a diagram showing a circuit configuration of one embodiment of the present invention, and FIG. 2 is a plan view showing a mechanical portion of a test apparatus of this embodiment, and 219 is a flexible film-like insulating plate 219.
a (described later in FIG. 3) and a pair of copper plate lead plates 219b and 219C having a thickness of 0.3 mm disposed in parallel with each other with the insulating plate 219a interposed therebetween. One end is connected to the capacitor 204, and the other end is connected to the main circuit terminal collector C1 and the emitter E2 of the semiconductor module 100, respectively.

Reference numeral 220 denotes a CT current detector for detecting a current flowing through the lead plate 219b, which is connected to the oscilloscope 216.

221 and 222 are power supply lead plates 21
A probe pin 223 is attached to one end of the cable 209 and abuts on the other side of the other end of the cable 9 and is connected to the output electrode of the semiconductor module 100 to connect the test load 207. , 224, 22
Reference numeral 5 denotes a probe pin connecting the gate drive circuit 214 and the oscilloscope 216 between the input terminal gate G1 and the emitter E1F of the semiconductor module 100. Reference numerals 226 and 227 denote gate drive circuits 215 between the input terminal gate G2 and the emitter E2F of the semiconductor module 100. The probe pins 228 and 229 for connecting the oscilloscope 216 are connected to the lead plates 219 b and 2 on the other side of the other end of the power supply lead plate 219.
The probe pin 230 abuts on the oscilloscope 216 and abuts on the oscilloscope 216.
And a probe pin for contacting the oscilloscope 216 in contact with the output electrode C2E1.

The probe pins 224 and 225 penetrate a substrate 214a constituting the gate drive circuit 214, are supported by soldering on the substrate 214a, and
The circuit is connected to a circuit pattern (not shown) of the gate drive circuit 214 formed in FIG. The probe pins 226 and 227 penetrate the substrate 215a constituting the gate drive circuit 215, are supported by soldering on the substrate 215a, and have a circuit pattern (not shown) of the gate drive circuit 215 formed on the substrate 215a. It is connected with.

FIG. 3 is a sectional view taken along line III-III of FIG. In the figure, 231 is a base plate, 232 is a base plate placed and fixed on the base plate 231,
233 and 234 are columns (other two are not shown) planted on the base plate 232, and 235 is columns 233 and 23
4 and supports the probe pins 221 to 223 and 228 to 230 described in FIG. 1 so as to be vertically movable in the vertical direction.
Are urged upward by coil springs 236 to 238, and probe pins 228 to 230 are urged upward by a coil spring (not shown).

Reference numeral 239 denotes an upper plate which is disposed above the middle plate 235 so as to be opposed to the middle plate 235 at an interval.
A guide pin 243 is integrally mounted on the upper plate 239 so as to protrude downward, and a lower end of the guide pin slidably fits through the middle plate 235 so as to be slidable up and down. The other two guide pins 242 and 243 are biased upward by a coil spring (not shown).

The upper surface of the upper plate 239 has a substrate 2
14a and 215a are respectively fixed.

246 and 247 are guide pins 24
Shaft C-shaped retaining rings for shafts that prevent 0 and 241 from coming out of the middle plate 235 upward, and are similarly provided (not shown) on the guide pins 242 and 243.

Reference numerals 248 to 251 denote support pins vertically implanted on the upper surface of the upper plate 239.
0 terminals C1, C2E1, E2, G1, E1F, G2,
The semiconductor module 100 is supported by fitting into the leg mounting holes 102a to 102d (shown in FIG. 5) of the case 102 so that the E2F faces downward.

Reference numeral 252 denotes a cylinder disposed on the surface plate 231 for vertically moving a press plate 253 for pressing the semiconductor module 100 supported by the support pins 248 to 251.

When the semiconductor module 100 is pressed by the press plate 253, the main circuit terminals C1, E2 of the semiconductor module 100 and the probe pins 221, 222, 22
8 and 229, the other end of the power supply lead plate 219 is sandwiched therebetween, and the output electrode C2E1 and the probe pins 223 and 23 are connected.
0 are connected to the input terminals G1, E1F, G2, and E2F of the semiconductor module 100.
226 are configured to be connected by corresponding pressure contact.

The press plate 253 has an origin at the upper end of the stroke of the cylinder 252, and is configured to automatically return to the origin when the test is not performed.

The other reference numerals are the same as those in FIGS. 4 and 5, and a description thereof will be omitted.

In the test apparatus configured as described above, first, the semiconductor module 100 is supported by the support pins 248 to 251 and the press plate 253 is lowered by the cylinder 252, whereby the circuit of FIG. Switch 2
By switching on and off the switches 12, 217 and 218 as appropriate, a test similar to the conventional one can be performed.

The semiconductor module 100 can be connected to the test apparatus 200 only by supporting the semiconductor module 100 with the support pins 248 to 251, lowering the press plate 253 with the cylinder 252 and pressing the semiconductor module 100. And press plate 253 to cylinder 2
The semiconductor module 100 can be removed simply by lifting the semiconductor module 100 raised at 52 and supported by the support pins 248 to 251 from the support pins 248 to 251.

Further, since the probe pins 221 to 230 move independently of each other during the pressure contact, the degree of freedom of the movement is increased as compared with the case where the probe pins are integrated.

Further, since the lead plates 219b and 219c of the power supply lead plate 219 having different current flowing directions are close to and parallel to each other, the inductance of the power supply circuit is reduced as compared with the related art.

The semiconductor module 100 of the first embodiment
Is an example of a device with two built-in MOSFETs.
It goes without saying that a semiconductor element other than OSETET may be used, and a plurality of such semiconductor elements may be used.

[0032]

Since the present invention is configured as described above, it has the following effects.

According to the first aspect of the present invention, the semiconductor module can be mounted on the supporting portion of the test device and connected to the test device simply by pressing it with the press plate. The productivity can be improved as compared with the conventional case.

According to the second aspect of the present invention, since the probe pins individually move in the pressure contact direction, the degree of freedom of the movement is increased as compared with an integrated one, and the pressure contact is made uniform and proper. Can be.

[Brief description of the drawings]

FIG. 1 is a circuit diagram of an embodiment of the present invention.

FIG. 2 is a plan view of a mechanism according to an embodiment of the present invention.

FIG. 3 is a longitudinal sectional view of a mechanism according to an embodiment of the present invention.

FIG. 4 is a circuit diagram of a semiconductor module.

FIG. 5 is an external view of a semiconductor module.

FIG. 6 is a configuration diagram of a conventional test apparatus.

[Explanation of symbols]

REFERENCE SIGNS LIST 100 semiconductor module 200 test apparatus 204 capacitor 207 test load 214 gate drive circuit 215 gate drive circuit 216 oscilloscope 219 power supply lead plate 220 current detector 221 load probe pin 222 load probe pin 223 load probe pin 224 input probe pin 225 Input probe pin 226 Input probe pin 227 Input probe pin 228 Test probe pin 229 Test probe pin 230 Test probe pin 248 Support pin 249 Support pin 250 Support pin 251 Support pin 252 Cylinder 253 Press plate

Continued on the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) G01R 31/26 G01R 31/28-31/3193 H01L 21/66

Claims (2)

(57) [Claims] A pair of power supplies, one end of which is connected to a power supply with an insulating plate interposed therebetween and a main circuit terminal of the semiconductor module facing one side of the other end. A lead plate, a test load connected thereto, a load probe pin disposed to face the main circuit terminal with the power supply lead plate interposed therebetween, and a load probe pin facing the other side surface of the power supply lead plate; A test probe pin corresponding to an input terminal and the main circuit terminal, and the main circuit terminal on one side of the power supply lead plate which presses the semiconductor module, and the load probe on the other side of the power supply lead plate. A semiconductor module having a press unit for pressing a pin and the test probe pin against the input terminal, respectively. Lumpur for test equipment. 2. The semiconductor module test apparatus according to claim 1, wherein the probe pins are individually movable in both the pressure contact direction and the counter pressure contact direction, and are individually pressed.