JP3312869B2 - Light emitting diode element - Google Patents

Light emitting diode element

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Publication number
JP3312869B2
JP3312869B2 JP32354797A JP32354797A JP3312869B2 JP 3312869 B2 JP3312869 B2 JP 3312869B2 JP 32354797 A JP32354797 A JP 32354797A JP 32354797 A JP32354797 A JP 32354797A JP 3312869 B2 JP3312869 B2 JP 3312869B2
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
mounting surface
light
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP32354797A
Other languages
Japanese (ja)
Other versions
JPH11163396A (en
Inventor
二郎 橋爪
昇一 小山
策雄 鎌田
信行 朝日
俊之 鈴木
泰史 秋庭
孝司 田中
英二 塩浜
勝 杉本
正平 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP32354797A priority Critical patent/JP3312869B2/en
Publication of JPH11163396A publication Critical patent/JPH11163396A/en
Application granted granted Critical
Publication of JP3312869B2 publication Critical patent/JP3312869B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、発光ダイオード素
子に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode device.

【0002】[0002]

【従来の技術】図6は従来の所謂ディスクリート型の発
光ダイオード20を示しており、一方のリード22の先
端部に図7に示すような発光接合(PN接合)を有する
発光ダイオードチップ(発光ダイオード素子)21が接
合され、他方のリード23の先端部とP層表面に設けた
電極21aとがボンディングワイヤ24によって接続さ
れるとともに、発光ダイオードチップ21と各リード2
2,23の先端部をエポキシ樹脂等の透明樹脂25で砲
弾状に封止してある。
2. Description of the Related Art FIG. 6 shows a conventional so-called discrete type light emitting diode 20. A light emitting diode chip (light emitting diode) having a light emitting junction (PN junction) as shown in FIG. Element 21 is joined, the tip of the other lead 23 and the electrode 21a provided on the surface of the P layer are connected by a bonding wire 24, and the light emitting diode chip 21 and each lead 2 are connected.
The tip portions 2 and 23 are sealed with a transparent resin 25 such as an epoxy resin in a shell shape.

【0003】上記発光ダイオード20は単色光を発する
ものであって、例えば図8に示すように回路基板26に
複数個を実装し通電することで、固有の発光色によるイ
ンジケータ等に利用されている。このように従来は表示
素子としてもっぱら使われてきた発光ダイオードである
が、近年、発光輝度の高いものが提供されるようになっ
てきており、上記のような表示素子のみならず、照明用
途への活用が検討されてきている。すなわち、高輝度の
発光ダイオードを複数個並べて配置することにより面状
の光源を形成するのであって、発光ダイオードが蛍光灯
や白熱灯等より長寿命であることから、略半永久的に交
換やメンテナンスが不要となり、高所の照明器具や信号
機等には蛍光灯や白熱灯の代わりに使用するメリットが
ある。また、エネルギ効率からも高輝度の発光ダイオー
ドの中には電球のエネルギ効率を上回るものも提供され
ており、省エネルギ化への期待も高まっている。
The light emitting diode 20 emits monochromatic light. For example, as shown in FIG. 8, when a plurality of light emitting diodes are mounted on a circuit board 26 and energized, the light emitting diode 20 is used as an indicator or the like with a specific light emitting color. . As described above, the light emitting diode is conventionally used exclusively as a display element. However, in recent years, a light emitting diode having a high light emission luminance has been provided. Utilization of is being studied. In other words, a planar light source is formed by arranging a plurality of high-brightness light emitting diodes side by side. Since the light emitting diodes have a longer life than fluorescent lamps or incandescent lamps, they are almost semi-permanently replaced or maintained. This is unnecessary, and there is an advantage that a lighting device or a traffic light at a high place can be used instead of a fluorescent lamp or an incandescent lamp. In addition, among light emitting diodes having high energy efficiency, some light emitting diodes that exceed the energy efficiency of light bulbs are provided, and expectations for energy saving are increasing.

【0004】そこで、大きな電流を流して発光量を大き
くするためには、発光ダイオード素子の電流容量がその
発光接合(PN接合)の面積に比例することから、発光
ダイオード素子のサイズを大きくする、すなわち、ウェ
ハから切断する際の切断サイズを大きくすれば、発光ダ
イオード素子の電流容量が大きくなって、発光量を増加
させることができる。
In order to increase the amount of light emission by flowing a large current, the size of the light emitting diode element is increased because the current capacity of the light emitting diode element is proportional to the area of the light emitting junction (PN junction). That is, if the cutting size when cutting from the wafer is increased, the current capacity of the light emitting diode element is increased, and the light emission amount can be increased.

【0005】[0005]

【発明が解決しようとする課題】ところが、発光ダイオ
ード素子を大きくしても、素子が実装される回路の配線
パターンによっては素子内に電流集中が起こり、発光輝
度に偏りができたり、一部で電流が飽和状態となって素
子が発熱し発光効率の低下に至るという不具合が発生す
る。例えば、図9に示すように、発光ダイオード素子3
0を通常のサイズ(図7参照)の4倍の面積を有するサ
イズとした場合、非実装面に形成される電極(ボンディ
ングパッド)31は電流容量と素子内の電流分散とを考
慮して4個に分割してある。
However, even if the light emitting diode element is enlarged, current concentration occurs in the element depending on the wiring pattern of the circuit on which the element is mounted, and the light emission luminance may be biased, or the light emitting luminance may be partially reduced. A problem occurs in which the current is saturated and the element generates heat, leading to a decrease in luminous efficiency. For example, as shown in FIG.
If 0 is a size having an area four times as large as a normal size (see FIG. 7), the electrode (bonding pad) 31 formed on the non-mounting surface has a size of 4 in consideration of current capacity and current dispersion in the element. It is divided into pieces.

【0006】一方、素子サイズの増大に伴い、図6に示
すようにリード22の先端部ではなく回路基板の金属箔
導体や金属板エッチングから成る配線部(配線パター
ン)32上に発光ダイオード素子30を載置しそれと接
続するのであるが、図10に示すように配線部32と電
極31との間に流れる電流は配線部32の引回しパター
ン33に近い方に多く流れる(電流密度が高くなる)こ
とになる(図10中の点線矢印参照)。そのため、発光
ダイオード素子としては上記引回しパターン33に近い
方の輝度が高くなり、遠い方の輝度が低くなってしま
う。また、供給電流が素子サイズの限界近くになると上
記電流密度の高い部分では電流が飽和状態となって発熱
量が増大し、周知の如く高温での発光効率の低下を招い
てしまう。
On the other hand, with the increase in the element size, as shown in FIG. 6, the light emitting diode element 30 is provided not on the tip of the lead 22 but on a wiring portion (wiring pattern) 32 made of metal foil conductor or metal plate etching of the circuit board. Is placed and connected to it. As shown in FIG. 10, a large amount of current flows between the wiring portion 32 and the electrode 31 nearer to the routing pattern 33 of the wiring portion 32 (the current density increases). (See the dotted arrow in FIG. 10). Therefore, as the light emitting diode element, the brightness near the wiring pattern 33 increases, and the brightness far from the wiring pattern 33 decreases. Further, when the supplied current is near the limit of the element size, the current is saturated in the portion where the current density is high, the amount of heat generation increases, and the luminous efficiency at a high temperature decreases as is well known.

【0007】本発明は上記問題点の解決を目的とするも
のであり、大きな電流を流して発光量を増大させ且つ部
分的な電流飽和や発熱による発光効率の低下を抑えた発
光ダイオード素子を提供しようとするものである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a light emitting diode device which increases a light emission amount by flowing a large current and suppresses a decrease in light emission efficiency due to partial current saturation and heat generation. What you want to do.

【0008】[0008]

【課題を解決するための手段】請求項1の発明は、上記
目的を達成するために、発光接合を有し被実装面及び非
実装面に各々電極を備えた発光ダイオード素子であっ
て、被実装面並びに非実装面の各電極をそれぞれ対向す
るような配置で複数に分割し、非実装面における前記電
極が形成されていない部位に少なくとも発光接合を露出
する露出溝を設けるとともに、被実装面において前記露
出溝と対向する位置に低抵抗となる拡散部分を形成した
ことを特徴とし、電極を通して流れる電流を発光ダイオ
ード素子内に略均一に分布させることができ、素子サイ
ズを大きくした場合でも部分的な電流飽和や発熱による
発光効率の低下を抑えて電流容量の増加により発光量の
増大が可能であり、さらに発光接合の露出した部位に多
くの電流を流して発光効率の向上が可能な発光ダイオー
ド素子が提供できる。
According to a first aspect of the present invention, there is provided a light emitting device having a light emitting junction and a mounting surface and a non-mounting surface.
A light emitting diode element having a respective electrode on the mounting surface, to counter the electrodes of the mounting surface and the non-mounting surface, respectively
Divided into a plurality in so that arrangement, the collector of the non-mounting surface
Exposing at least the light emitting junction in the area where no pole is formed
And an exposed groove on the mounting surface.
A diffusion portion having low resistance is formed at a position opposed to the groove, so that the current flowing through the electrode can be distributed substantially uniformly in the light emitting diode element, and even when the element size is increased, a partial current is generated. A light-emitting diode element that can suppress the decrease in luminous efficiency due to current saturation and heat generation, increase the amount of light emission by increasing the current capacity , and improve the luminous efficiency by applying a large amount of current to the exposed part of the light-emitting junction. Can be provided.

【0009】請求項2の発明は、上記目的を達成するた
めに、発光接合を有し被実装面及び非実装面に各々電極
を備えた発光ダイオード素子であって、被実装面並びに
非実装面の各電極をそれぞれ対向するような配置で複数
に分割してなり、被実装面の各電極と接続される配線部
を備え、この配線部の各電極との接続部へ分岐される部
分を、各分岐部分の抵抗値が略同一となる幅寸法に形成
したことを特徴とし、電極を通して流れる電流を発光ダ
イオード素子内に略均一に分布させることができ、素子
サイズを大きくした場合でも、電流を平均化して部分的
な電流飽和や発熱による発光効率の低下を抑えて電流容
量の増加により発光量の増大が可能な発光ダイオード素
子が提供できる。請求項3の発明は、上記目的を達成す
るために、発光接合を有し被実装面及び非実装面に各々
電極を備えた発光ダイオード素子であって、被実装面並
びに非実装面の各電極をそれぞれ対向するような配置で
複数に分割し、非実装面における前記電極が形成されて
いない部位に少なくとも発光接合を露出する露出溝を設
けて複数のブロックに分割するとともに、被実装面にお
いて前記ブロックの略中央にブロック周辺部の電流密度
を上げるための凹部を形成したことを特徴とし、電極を
通して流れる電流を発光ダイオード素子内に略均一に分
布させることができ、素子サイズを大きくした場合でも
部分的な電流飽和や発熱による発光効率の低下を抑えて
電流容量の増加により発光量の増大が可能であり、さら
に発光接合の露出した部位に多くの電流を流して発光効
率の向上が可能な発光ダイオード素子が提供できる。
The invention of claim 2 achieves the above object.
In order to achieve this, light-emitting
A light emitting diode element comprising:
Multiple electrodes are arranged so that each electrode on the non-mounting surface faces each other
Divided it by the includes a wiring portion connected to each electrode of the mounting surface, a portion which is branched to the connecting portion between the electrodes of the wiring portion, the resistance value of each branch portion becomes substantially equal to the width It is characterized in that it is formed in dimensions, and the current flowing through the electrodes is
It can be distributed almost uniformly within the iodine element,
Even if the size is increased, the current is averaged and partially
To reduce the luminous efficiency due to excessive current saturation and heat generation.
Light-emitting diode element that can increase the amount of light emission by increasing the amount
Child can provide. The invention of claim 3 achieves the above object.
In order to have a light emitting junction,
A light-emitting diode element with electrodes
And the electrodes on the non-mounting surface face each other.
Divided into a plurality and the electrodes on the non-mounting surface are formed
Exposed grooves that expose at least the light-emitting junction
And divide it into multiple blocks, and
And the current density around the block is approximately at the center of the block.
Characterized in that a recess for increasing the the electrode
Current flowing through the light-emitting diode
Even if the element size is increased.
Suppress decrease in luminous efficiency due to partial current saturation and heat generation
It is possible to increase the amount of light emission by increasing the current capacity.
When a large amount of current is applied to the exposed part of the light emitting junction,
A light emitting diode element capable of improving the efficiency can be provided.

【0010】請求項4の発明は、請求項1の発明におい
て、非実装面における前記電極が形成されていない部位
に少なくとも発光接合を露出する露出溝を設けて複数の
ブロックに分割するとともに、被実装面において前記ブ
ロックの略中央にブロック周辺部の電流密度を上げるた
めの凹部を形成したことを特徴とし、発光接合の露出し
た部位に多くの電流を流すことができて発光効率の向上
が図れる。請求項5の発明は、請求項1又は2又は3
発明において、被実装面に溝を設けたことを特徴とし、
さらに電流の平均化が図れる。
According to a fourth aspect of the present invention, in the first aspect of the present invention, a portion of the non-mounting surface where the electrode is not formed.
Provide at least an exposure groove for exposing the light emitting junction
While dividing into blocks,
To increase the current density around the block almost in the center of the lock
Recesses are formed to expose the light-emitting junction.
A large amount of current can be passed through the site , and the luminous efficiency can be improved. According to a fifth aspect of the present invention, in the first or second or third aspect of the present invention, a groove is provided on a mounting surface .
Further, the current can be averaged.

【0011】[0011]

【発明の実施の形態】(実施形態1)本発明の実施形態
1の分解斜視図を図1に示す。半導体プロセスによりN
型の基板にP型層を形成したウェハを適当な大きさに切
断し、P層1aの表面(非実装面)及びN層1bの裏面
(被実装面)にAu等の金属から成る電極2をそれぞれ
複数(本実施形態では4つずつ)設けて発光ダイオード
素子1を形成する。但し、表裏面の各電極2はP層1a
及びN層1bを挟んで対向するように配置することが望
ましい。
(Embodiment 1) An exploded perspective view of Embodiment 1 of the present invention is shown in FIG. N by semiconductor process
A wafer having a P-type layer formed on a mold substrate is cut into an appropriate size, and an electrode 2 made of a metal such as Au is formed on the surface (non-mounting surface) of the P layer 1a and the back surface (mounting surface) of the N layer 1b. Are provided in plurality (four in this embodiment) to form the light emitting diode element 1. However, each electrode 2 on the front and back surfaces is a P layer 1a.
It is desirable to arrange them so as to face each other with the N layer 1b interposed therebetween.

【0012】そして、裏面の電極(図示せず)を回路基
板に形成された配線部10の接続部11にダイボンディ
ングにより接続するとともに、表面の電極2をワイヤボ
ンディングにより図示しない配線パターンに接続するこ
とで発光ダイオード素子1が組み立てられる。ここで、
図7に示した従来の発光ダイオード素子21では、表裏
面の縦横の寸法を約0.2〜0.3〔mm〕とし、10
〜20〔mA〕程度の電流を流して10〜20〔mc
d〕の光量が得られる。なお、図6に示すように封止樹
脂25をレンズに用いることで視野角を絞れば、数cd
程度の輝度も得ることが可能である。本実施形態では、
上記従来例に対して表面(及び裏面)の面積を4倍にす
るため、上記従来例に対して2倍のピッチでウェハを切
断する。
An electrode (not shown) on the back surface is connected to the connection portion 11 of the wiring portion 10 formed on the circuit board by die bonding, and the electrode 2 on the front surface is connected to a wiring pattern (not shown) by wire bonding. Thus, the light emitting diode element 1 is assembled. here,
In the conventional light emitting diode element 21 shown in FIG. 7, the vertical and horizontal dimensions of the front and back surfaces are set to about 0.2 to 0.3 [mm].
A current of about 20 [mA] to 10-20 [mc
d) is obtained. If the viewing angle is reduced by using the sealing resin 25 for the lens as shown in FIG.
A degree of brightness can be obtained. In this embodiment,
In order to quadruple the area of the front surface (and the back surface) of the conventional example, the wafer is cut at twice the pitch of the conventional example.

【0013】而して、本実施形態では、表面と裏面とに
それぞれ設ける電極2を複数に分割したため、従来例に
対して素子面積を大きくしたにも拘らず、内部に流れる
電流の分布を略均一にすることができる。つまり、発光
ダイオード素子1の面積を大きくすることで電流容量を
増大し、発光量を増加させることができるとともに、発
光ダイオード素子1の内部に流れる電流の分布が略均一
であることから、従来問題となっていた部分的な電流飽
和もなく、発光効率のよい発光ダイオード素子1が実現
でき、さらに通電による発熱が略均一に生じて偏ること
がなく、輝度むらの発生を防止することができる。な
お、従来例のような小さな発光ダイオード素子21を多
数実装して光量のアップを図るよりも、本実施形態のよ
うに寸法が大きく、大電流を流すことができて発光量の
多い発光ダイオード素子1を用いれば、所望の光量を得
るために必要な発光ダイオード素子1の個数を減らすこ
とができ、実装にかかる工数が削減できるという利点が
ある。
In this embodiment, since the electrodes 2 provided on the front surface and the rear surface are divided into a plurality of parts, the distribution of the current flowing in the inside is substantially reduced despite the increase in the element area as compared with the conventional example. It can be uniform. That is, by increasing the area of the light emitting diode element 1, the current capacity can be increased and the light emission amount can be increased, and the distribution of the current flowing inside the light emitting diode element 1 is substantially uniform. As a result, the light-emitting diode element 1 with high luminous efficiency can be realized without partial current saturation, and the heat generated by energization is generated substantially uniformly, without bias, and the occurrence of uneven brightness can be prevented. It should be noted that, compared to mounting a large number of small light emitting diode elements 21 as in the conventional example to increase the amount of light, a light emitting diode element having a large size, allowing a large current to flow, and emitting a large amount of light as in the present embodiment. The use of 1 has the advantage that the number of light emitting diode elements 1 required to obtain a desired light amount can be reduced, and the number of steps required for mounting can be reduced.

【0014】ところで、本実施形態では回路基板に形成
される配線部10の各接続部11へ分岐された部分12
を、各分岐部分12の抵抗値が略同一となる幅寸法に形
成してある。そのため、配線部10を流れる電流、ひい
ては発光ダイオード素子1内を流れる電流を平均化する
ことができる。なお、図2に示すように裏面(被実装
面)側からN層1bに電極間をブロックに分割するため
の溝3を設ければ、発光ダイオード素子1内を流れる電
流の分離並びに平均化を行うことができる。なお、発光
ダイオード素子1の裏面にエッチングやダイシングブレ
ード機械加工などを施すことで加工し、溝3を容易に形
成することができる。
In this embodiment, a portion 12 of the wiring portion 10 formed on the circuit board is branched into each connection portion 11.
Are formed in a width dimension such that the resistance value of each branch portion 12 is substantially the same. Therefore, the current flowing through the wiring portion 10 and the current flowing through the light emitting diode element 1 can be averaged. As shown in FIG. 2, if grooves 3 for dividing the electrodes into blocks are provided in the N layer 1b from the back surface (mounting surface) side, the current flowing in the light emitting diode element 1 can be separated and averaged. It can be carried out. The groove 3 can be easily formed by processing the back surface of the light emitting diode element 1 by etching, dicing blade machining, or the like.

【0015】(実施形態2)本発明の実施形態2の側面
図を図3に示す。本実施形態は、発光ダイオード素子1
の表面(非実装面)に発光接合を露出する露出溝4を設
けるとともに、裏面(被実装面)側の周辺近傍に低抵抗
となる拡散部分(P+ 層)5を形成した点に特徴があ
り、その他P層1aを裏面側、N層1bを表面側とした
以外の構成は実施形態1と共通するので共通する部分に
同一の符号を付して説明を省略する。
Embodiment 2 FIG. 3 shows a side view of Embodiment 2 of the present invention. In this embodiment, the light emitting diode element 1
The surface (non-mounting surface) is provided with an exposure groove 4 for exposing the light emitting junction, and a diffusion portion (P + layer) 5 having low resistance is formed near the periphery on the back surface (mounting surface) side. In addition, the configuration other than the P layer 1a on the back side and the N layer 1b on the front side is common to the first embodiment.

【0016】従来、発光効率をよくするために、図4に
示すように発光ダイオード素子1’の表面から発光接合
に達する露出溝4’を設けて、発光接合を露出溝4’か
ら露出するようにしたものが提案されている(特開昭5
0−105286号公報参照)。而して、本実施形態で
は、露出溝4により分割されるブロック毎に各電極2か
ら電流を流すことで電流分布を略均一にすることができ
るとともに、裏面(被実装面)側の周辺近傍(露出溝4
に対向する位置)に設けた拡散部分5で抵抗値を下げる
ことにより、露出溝4近傍の電流密度を上げて発光接合
付近の電流量を増加させ、発光効率をアップさせること
ができる。なお、拡散部分5は発光ダイオード素子1の
裏面側より高濃度のP+ 材料を拡散して形成すればよ
い。
Conventionally, in order to improve the luminous efficiency, as shown in FIG. 4, an exposed groove 4 'reaching the light emitting junction from the surface of the light emitting diode element 1' is provided so that the light emitting junction is exposed from the exposed groove 4 '. (Japanese Unexamined Patent Publication No.
0-105286). Thus, in the present embodiment, the current distribution can be made substantially uniform by flowing a current from each electrode 2 for each block divided by the exposure groove 4, and the vicinity of the periphery on the back surface (mounting surface) side (Exposed groove 4
By lowering the resistance value at the diffusion portion 5 provided at (a position facing), the current density near the exposed groove 4 is increased, the current amount near the light emitting junction is increased, and the luminous efficiency can be increased. The diffusion portion 5 may be formed by diffusing a high-concentration P + material from the back surface side of the light emitting diode element 1.

【0017】また、図5に示すように露出溝4により分
割された各ブロックの裏面(被実装面)の略中央にエッ
チング等の適宜方法で凹部6を形成すれば、同様に各ブ
ロック周辺部(露出溝4近傍)の電流密度を上げて発光
接合付近の電流量を増加させ、発光効率をアップさせる
ことができる。
As shown in FIG. 5, if the concave portion 6 is formed at an approximate center of the back surface (mounting surface) of each block divided by the exposure groove 4 by an appropriate method such as etching, the peripheral portion of each block is similarly formed. By increasing the current density (in the vicinity of the exposed groove 4), the amount of current near the light emitting junction can be increased, and the luminous efficiency can be increased.

【0018】[0018]

【発明の効果】請求項1の発明は、発光接合を有し被実
装面及び非実装面に各々電極を備えた発光ダイオード素
子であって、被実装面並びに非実装面の各電極をそれぞ
れ対向するような配置で複数に分割し、非実装面におけ
る前記電極が形成されていない部位に少なくとも発光接
合を露出する露出溝を設けるとともに、被実装面におい
て前記露出溝と対向する位置に低抵抗となる拡散部分を
形成したので、電極を通して流れる電流を発光ダイオー
ド素子内に略均一に分布させることができ、素子サイズ
を大きくした場合でも部分的な電流飽和や発熱による発
光効率の低下を抑えて電流容量の増加により発光量の増
大が可能であり、さらに発光接合の露出した部位に多く
の電流を流して発光効率の向上が可能な発光ダイオード
素子が提供できるという効果がある。
Effect of the Invention of Claim 1 invention, the real has an emission junction
A light emitting diode element having a respective electrode to Somen and non-mounting surface, it the electrodes of the mounting surface and the non-mounting surface
Divided into multiple parts so that they face each other, and
At least in a portion where the electrode is not formed.
Provide an exposed groove to expose the
A diffusion portion having low resistance at a position facing the exposed groove.
As a result, the current flowing through the electrodes can be distributed almost uniformly in the light emitting diode element, and even when the element size is increased, the reduction in luminous efficiency due to partial current saturation and heat generation is suppressed, and the current capacity is increased. It is possible to increase the amount of luminescence , and moreover,
The present invention has the effect of providing a light emitting diode element capable of improving the luminous efficiency by passing the current .

【0019】請求項2の発明は、発光接合を有し被実装
面及び非実装面に各々電極を備えた発光ダイオード素子
であって、被実装面並びに非実装面の各電極をそれぞれ
対向するような配置で複数に分割してなり、被実装面の
各電極と接続される配線部を備え、この配線部の各電極
との接続部へ分岐される部分を、各分岐部分の抵抗値が
略同一となる幅寸法に形成したので、電極を通して流れ
る電流を発光ダイオード素子内に略均一に分布させるこ
とができ、素子サイズを大きくした場合でも、電流を平
均化して部分的な電流飽和や発熱による発光効率の低下
を抑えて電流容量の増加により発光量の増大が可能な発
光ダイオード素子が提供できるという効果がある。請求
項3の発明は、発光接合を有し被実装面及び非実装面に
各々電極を備えた発光ダイオード素子であって、被実装
面並びに非実装面の各電極をそれぞれ対向するような配
置で複数に分割し、非実装面における前記電極が形成さ
れていない部位に少なくとも発光接合を露出する露出溝
を設けて複数のブロックに分割するとともに、被実装面
において前記ブロックの略中央にブロック周辺部の電流
密度を上げるための凹部を形成したので、電極を通して
流れる電流を発光ダイオード素子内に略均一に分布させ
ることができ、素子サイズを大きくした場合でも部分的
な電流飽和や発熱による発光効率の低下を抑えて電流容
量の増加により発光量の増大が可能であり、さらに発光
接合の露出した部位に多くの電流を流して発光効率の向
上が可能な発光ダイオード素子が提供できるという効果
がある。
According to a second aspect of the present invention, there is provided a light emitting device having a light emitting junction.
Light-emitting diode element having electrodes on both the surface and the non-mounting surface
And the electrodes on the mounting surface and the non-mounting surface are respectively
It is divided into a plurality of parts so as to face each other, and has a wiring part connected to each electrode on the mounting surface, and a part branched to a connection part of each wiring part with each electrode is a resistance of each branch part. since the value is a width dimension of the substantially the same, the flow through the electrode
Current can be distributed almost uniformly in the light emitting diode element.
Even when the element size is increased, the current is flattened.
Reduction of luminous efficiency due to partial current saturation and heat generation
To increase the amount of light emission by increasing current capacity
There is an effect that a photodiode element can be provided . The invention according to claim 3 has a light emitting junction and has a light emitting junction on a mounting surface and a non-mounting surface.
Light-emitting diode elements with electrodes
Arrange the electrodes on the surface and the non-mounting surface so that they face each other.
And the electrodes are formed on the non-mounting surface.
Exposed groove that exposes at least the light emitting junction in the part that is not
To divide into multiple blocks,
And the current around the block is located approximately at the center of the block.
Since a recess for increasing the density through the electrode
Distribute the flowing current almost uniformly in the light emitting diode element
Even if the element size is increased.
To reduce the luminous efficiency due to excessive current saturation and heat generation.
The amount of light emission can be increased by increasing the amount,
A large amount of current is applied to the exposed part of the junction to improve luminous efficiency.
There is an effect that a light emitting diode element which can be provided can be provided .

【0020】請求項4の発明は、非実装面における前記
電極が形成されていない部位に少なくとも発光接合を露
出する露出溝を設けて複数のブロックに分割するととも
に、被実装面において前記ブロックの略中央にブロック
周辺部の電流密度を上げるための凹部を形成したので、
発光接合の露出した部位に多くの電流を流すことができ
て発光効率の向上が図れるという効果がある。請求項5
の発明は、被実装面に溝を設けたことを特徴とし、さら
に電流の平均化が図れるという効果がある。
According to a fourth aspect of the present invention, the non-mounting surface is
Exposing at least the light emitting junction to the area where no electrode is formed
It is divided into multiple blocks by providing an exposed groove
In the mounting surface, a block is provided substantially at the center of the block.
Since a concave part was formed to increase the current density in the peripheral part ,
There is an effect that a large amount of current can flow through the exposed portion of the light emitting junction, thereby improving the luminous efficiency. Claim 5
Is characterized in that a groove is provided on the surface to be mounted.
This has the effect that the current can be averaged .

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施形態1を示す分解斜視図である。FIG. 1 is an exploded perspective view showing a first embodiment.

【図2】同上の他の構成を示す斜視図である。FIG. 2 is a perspective view showing another configuration of the above.

【図3】実施形態2を示す側面図である。FIG. 3 is a side view showing the second embodiment.

【図4】同上を説明するための説明図である。FIG. 4 is an explanatory diagram for explaining the above.

【図5】同上の他の構成を示す側面図である。FIG. 5 is a side view showing another configuration of the above.

【図6】従来のディスクリート型の発光ダイオードを示
す側面図である。
FIG. 6 is a side view showing a conventional discrete light emitting diode.

【図7】同上の発光ダイオード素子を示す斜視図であ
る。
FIG. 7 is a perspective view showing the light emitting diode element of the above.

【図8】同上の発光ダイオードを用いたインジケータを
示す斜視図である。
FIG. 8 is a perspective view showing an indicator using the light emitting diode of the above.

【図9】他の従来例を示す斜視図である。FIG. 9 is a perspective view showing another conventional example.

【図10】同上の機能を説明するための説明図である。FIG. 10 is an explanatory diagram for explaining the above function.

【符号の説明】[Explanation of symbols]

1 発光ダイオード素子 2 電極 10 配線部 11 接続部 DESCRIPTION OF SYMBOLS 1 Light emitting diode element 2 Electrode 10 Wiring part 11 Connection part

───────────────────────────────────────────────────── フロントページの続き (72)発明者 朝日 信行 大阪府門真市大字門真1048番地松下電工 株式会社内 (72)発明者 鈴木 俊之 大阪府門真市大字門真1048番地松下電工 株式会社内 (72)発明者 秋庭 泰史 大阪府門真市大字門真1048番地松下電工 株式会社内 (72)発明者 田中 孝司 大阪府門真市大字門真1048番地松下電工 株式会社内 (72)発明者 塩浜 英二 大阪府門真市大字門真1048番地松下電工 株式会社内 (72)発明者 杉本 勝 大阪府門真市大字門真1048番地松下電工 株式会社内 (72)発明者 山本 正平 大阪府門真市大字門真1048番地松下電工 株式会社内 (56)参考文献 特開 平1−280368(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01L 33/00 JICSTファイル(JOIS)──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Nobuyuki Asahi 1048 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Works, Ltd. Inventor Yasushi Akiba 1048 Kadoma Kadoma, Kadoma City, Osaka Pref. (72) Inventor Koji Tanaka 1048 Kadoma Kadoma, Kadoma, Osaka Pref. No. 1048 Matsushita Electric Works Co., Ltd. references Patent flat 1-280368 (JP, a) (58 ) investigated the field (Int.Cl. 7, DB name) H01L 33/00 JICST off Yl (JOIS)

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 発光接合を有し被実装面及び非実装面
各々電極を備えた発光ダイオード素子であって、被実装
面並びに非実装面の各電極をそれぞれ対向するような配
置で複数に分割し、非実装面における前記電極が形成さ
れていない部位に少なくとも発光接合を露出する露出溝
を設けるとともに、被実装面において前記露出溝と対向
する位置に低抵抗となる拡散部分を形成したことを特徴
とする発光ダイオード素子。
1. A light emitting diode element having a respective electrode on the mounted surface and the non-mounting surface has a light-emitting junction, the mounted
Arrange the electrodes on the surface and the non-mounting surface so that they face each other.
And the electrodes are formed on the non-mounting surface.
Exposed groove that exposes at least the light emitting junction in the part that is not
And facing the exposed groove on the mounting surface.
A light-emitting diode element, wherein a diffusion portion having low resistance is formed at a position where the light-emitting diode is formed .
【請求項2】 発光接合を有し被実装面及び非実装面に
各々電極を備えた発光ダイオード素子であって、被実装
面並びに非実装面の各電極をそれぞれ対向するような配
置で複数に分割してなり、被実装面の各電極と接続され
る配線部を備え、この配線部の各電極との接続部へ分岐
される部分を、各分岐部分の抵抗値が略同一となる幅寸
法に形成したことを特徴とする発光ダイオード素子。
2. A light emitting junction having a light emitting junction on a surface to be mounted and a non-mounting surface.
Light-emitting diode elements with electrodes
Arrange the electrodes on the surface and the non-mounting surface so that they face each other.
It is divided plurality in location, includes a wiring portion connected to each electrode of the mounting surface, a portion which is branched to the connecting portion between the electrodes of the wiring portion, substantially the same resistance value of each branch portion to that light-emitting diodes device characterized in that it is formed to the width of the.
【請求項3】 発光接合を有し被実装面及び非実装面に
各々電極を備えた発光ダイオード素子であって、被実装
面並びに非実装面の各電極をそれぞれ対向するような配
置で複数に分割し、非実装面における前記電極が形成さ
れていない部位に少なくとも発光接合を露出する露出溝
を設けて複数のブロックに分割するとともに、被実装面
において前記ブロックの略中央にブロック周辺部の電流
密度を上げるための凹部を形成したことを特徴とす
光ダイオード素子。
3. A light emitting junction having a light emitting junction on a surface to be mounted and a non-mounting surface.
Light-emitting diode elements with electrodes
Arrange the electrodes on the surface and the non-mounting surface so that they face each other.
And the electrodes are formed on the non-mounting surface.
Exposed groove that exposes at least the light emitting junction in the part that is not
To divide into multiple blocks,
And the current around the block is located approximately at the center of the block.
Emitting <br/> photodiode element you characterized in that a recess for increasing the density.
【請求項4】 非実装面における前記電極が形成されて
いない部位に少なくとも発光接合を露出する露出溝を設
けて複数のブロックに分割するとともに、被実装面にお
いて前記ブロックの略中央にブロック周辺部の電流密度
を上げるための凹部を形成したことを特徴とする請求項
1記載の発光ダイオード素子。
4. The method according to claim 1, wherein the electrode is formed on a non-mounting surface.
Exposed grooves that expose at least the light-emitting junction
And divide it into multiple blocks, and
And the current density around the block is approximately at the center of the block.
Wherein a recess for raising the height is formed.
1 Symbol mounting of the light emitting diode element.
【請求項5】 被実装面に溝を設けたことを特徴とする
請求項1又は2又は3記載の発光ダイオード素子。
5. A groove is provided on a mounting surface.
The light-emitting diode device according to claim 1 .
JP32354797A 1997-11-25 1997-11-25 Light emitting diode element Expired - Fee Related JP3312869B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32354797A JP3312869B2 (en) 1997-11-25 1997-11-25 Light emitting diode element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32354797A JP3312869B2 (en) 1997-11-25 1997-11-25 Light emitting diode element

Publications (2)

Publication Number Publication Date
JPH11163396A JPH11163396A (en) 1999-06-18
JP3312869B2 true JP3312869B2 (en) 2002-08-12

Family

ID=18155926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32354797A Expired - Fee Related JP3312869B2 (en) 1997-11-25 1997-11-25 Light emitting diode element

Country Status (1)

Country Link
JP (1) JP3312869B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100570911C (en) 2005-07-15 2009-12-16 松下电器产业株式会社 Semiconductor light-emitting elements and semiconductor light-emitting elements installation substrate

Also Published As

Publication number Publication date
JPH11163396A (en) 1999-06-18

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