JP3311867B2 - Ball grid array type semiconductor device and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ball grid array type semiconductor device and a method of manufacturing the same, and more particularly, to a ball grid array type semiconductor device (hereinafter simply referred to as a BGA type semiconductor device) constituting a high-speed memory such as a cache memory. about the production how of the semiconductor device.

[0002]

2. Description of the Related Art As electronic devices have become more sophisticated, it has been demanded that LSI packages be provided with more external terminals (multiple pins). To cope with this increase in pins, QFP (Quad Flame)
t Package), the external terminal spacing is 0.5 m
m, 0.4 mm, etc. However, by reducing the terminal interval, the mounting soldering technology has become very advanced, and an alternative multi-pin package has been sought.

On the other hand, a plastic ball grid array type semiconductor device has recently attracted attention. As shown in FIG. 21, a plastic BGA type semiconductor device includes a wiring board (hereinafter simply referred to as a wiring board) 1 having wiring on a main surface 1a and a back surface 1b, and a semiconductor chip (semiconductor) mounted on the main surface of the wiring substrate 1. Element) 2, a conductive wire 6 made of gold (Au) for connecting the electrode 3 provided on the surface of the semiconductor chip 2 and the bonding pad 5 of the wiring 4 provided on the main surface of the wiring board 1. And a sealing body (hereinafter, referred to as a resin) formed on the main surface side of the wiring substrate 1 by transfer molding and sealing the semiconductor chip 2 and the wires 6 and the like as electrical connection portions.
(Also called resin package or simply package)
7 and projecting electrodes 9 provided on a plurality of electrodes 8 arranged in an array on the back surface of the wiring board 1. The protruding electrode 9 becomes an external electrode 9b, and the electrode 8
It is formed by the solder bump 9a formed thereon.

The plastic BGA type semiconductor device 10
(Hereinafter, also simply referred to as a BGA type semiconductor device), for example, as shown in FIG.
6, the bump electrodes 9 are positioned and mounted on the upper surface of the wiring board 6, and the bump electrodes 9 (solder bumps 9a) are reflowed so that the solder spreads over the connection pads 16 on the wiring board 1 so that the connection pads 16 It is implemented by making a connection with the electrode 9.

The BGA type semiconductor device and its mounting are described in, for example, “Nikkei Electronics”, February 14, 1994, pages 59 to 73, published by Nikkei BP, and “VLSI Packaging Technology (lower) P174” published by Nikkei BP. The former document describes an in-circuit test and a burn-in test, in which a dedicated pad is provided on a printed circuit board on the back surface at a position where a BGA is mounted. In addition, the former document introduces a test socket used for burn-in, etc. In the test socket, it is necessary to prevent deformation of solder balls (solder bump electrodes), Attempts have been made to break the thin oxide film on the surface of the solder ball and make electrical connections. There has been described.

On the other hand, a semiconductor device (semiconductor device)
In order to guarantee the reliability of the product, non-defective products are selected through various tests (measurement, inspection, etc.). As one of such non-defective product selection methods (screening), there is a so-called burn-in test for performing an accelerated life test by applying an electric stress to a semiconductor device in a high-temperature environment. For example, Issued by the Industrial Research Institute, “Electronic Materials Separate Volume” issued on November 20, 1985,
P227 to P231 describe a burn-in device.

[0007]

The applicant of the present invention also has a high-speed memory such as (SRAM: Static Random Access).
Memory). The high-speed memory is a ball grid array type semiconductor device (hereinafter also referred to as a BGA type semiconductor device) in which projecting electrodes are arranged in an array. This BGA type semiconductor device is subjected to an operation test (functional test) as a final inspection after the burn-in test. However, at the time of the operation test, the test result may have many non-uniformities (variation). The occurrence of this non-uniformity has been found by the present inventors to be due to the burn-in test described above.

That is, in the burn-in test, the operating BGA type semiconductor device is left (exposed) in a high-temperature burn-in chamber at 100 to 150 ° C. for 100 hours or more. In addition, since the burn-in test is performed in the air atmosphere, the surface of the bump electrode formed of solder (Pb-Sn) is less than the natural oxide film due to oxygen contained in the air, as shown in FIG. A thick oxide film 17 is formed.

FIG. 23 shows measurement terminals (pins) 18 of a socket in an operation test and projection electrodes 9 (solder bumps 9).
(a) is a diagram showing a contact state with an external electrode (9b). The measurement terminal 18 has a configuration in which the tip of the measurement terminal 18 breaks through the oxide film 17 on the lower surface of the protruding electrode 9 to make electrical contact.
A natural oxide film is formed on the surface of the bump electrode 9 made of lead-tin even in a natural state. This natural oxide film is, for example,
It is about 0.5 μm, which is extremely thin immediately after the formation of the protruding electrodes 9. However, in the case of the protruding electrode 9 exposed to the high temperature atmosphere for a long time in the burn-in test, the oxidation of the surface is forcibly advanced, for example, about 10 μm, which is thicker than the natural oxide film. There is a tendency that the tip cannot completely (or partially, though not shown) break through the oxide film 17, and the electrical contact resistance (contact resistance) tends to increase. As a result, an accurate operation test cannot be performed.

The BGA type semiconductor device 10 is mounted by melting the solder bumps 9a and spreading the solder on the connection pads 16 of the mounting board 15. However, if a thick oxide film exists on the surface of the solder bumps 9a, The wettability of the solder on the connection pad 16 is reduced, so that poor connection of the solder occurs or the connection becomes uncertain, and the reliability of mounting is reduced. Further, when a flux is used to remove a thick oxide film, there is a problem that chlorine in the flux corrodes an Al electrode on a semiconductor chip.

Further, in the burn-in test, as described in the above-mentioned document, a single BGA type semiconductor device is attached to each socket one by one.
A lot of time is required for attaching and detaching the GA type semiconductor device, resulting in low workability.

In FIG. 23, an electrode 8 is provided on the back surface 1b of the wiring board 1, and the electrode 8 is covered with an insulator, for example, a solder resist film 19. The solder resist film 19 is partially removed,
A protruding electrode 9 (solder bump 9) is provided on the exposed surface of the electrode 8.
a, also referred to as an external electrode 9b).

On the other hand, as described in the above literature, when soldering is performed, soldering is performed in a nitrogen atmosphere in order to prevent oxidation of the solder. Therefore,
The inventor of the present invention has realized that if the protruding electrode is attached to the wiring board after the burn-in test, the protruding electrode can be formed without being exposed to an oxidizing high-temperature atmosphere. In addition, the inventors have focused on the fact that the thickness of the oxide film depends more on the temperature than on the time, so that the formation of a thick oxide film can be prevented unless the protruding electrode is exposed to a high-temperature atmosphere.

An object of the present invention is to provide a ball grid array type semiconductor device having a bump electrode having a thin surface oxide film, that is, a ball grid array type semiconductor device having no oxide film due to a burn-in test and a method of manufacturing the same. It is in.

Another object of the present invention is to provide a ball grid array type semiconductor device capable of performing an accurate operation test (functional test) and a method of manufacturing the same.

Another object of the present invention is to provide a ball grid array type semiconductor device having good mounting performance and a method of manufacturing the same.

Another object of the present invention is to provide a ball grid array type semiconductor device capable of preventing short circuit failure on the side surface of a wiring board and a method of manufacturing the same.

Another object of the present invention is to provide a wiring board capable of performing a burn-in test efficiently.

Another object of the present invention is to provide a wiring board capable of reducing the size of a burn-in test apparatus.

Another object of the present invention is to provide a small-sized burn-in test apparatus having high working efficiency and high processing capacity.

Another object of the present invention is to improve the reliability of mounting a ball grid array type semiconductor device in an electronic device mounting the ball grid array type semiconductor device.

Another object of the present invention is to reduce the size of an electronic device having a plurality of ball grid array type semiconductor devices mounted thereon.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0024]

The outline of a typical one of the present inventions disclosed in the present application is briefly described as follows.
It is as follows. That is, the ball grid array type semiconductor device of the present invention is a wiring substrate, a semiconductor chip fixed to the wiring substrate, a connecting means for electrically connecting the electrode of the semiconductor chip and the wiring of the wiring substrate, A semiconductor device comprising: a sealing body made of a resin covering the semiconductor chip and the connection means; and a plurality of protruding electrodes provided on the wiring substrate, wherein a thickness of an oxide film on a surface of the protruding electrode is a burn-in test. Exposure to high temperature atmosphere at the time
The thickness does not include the oxide film to be formed and is equal to or less than the thickness of the natural oxide film.

According to the method of manufacturing a ball grid array type semiconductor device of the present invention, a step of attaching a semiconductor chip to a wiring board, a step of electrically connecting wiring of the wiring board to electrodes of the semiconductor chip, Covering the electrical connection means with a sealing body, applying an electrical stress to the semiconductor chip, performing an accelerated life test (burn-in test), and, after the test (burn-in test), performing a non-oxidizing atmosphere. in a step of providing a protruding electrode on the wiring board.

A wiring substrate used in the method of manufacturing a ball grid array type semiconductor device according to the present invention comprises a ball grid array type semiconductor device forming region and a removed region to be cut and removed. A burn-in test terminal is provided on one edge (one side) of the substrate, and the part of the burn-in test terminal is connected to a wiring extending from another burn-in test terminal in the removal area. As a result, the number of burn-in test terminals can be reduced, and the length of the burn-in test terminal row is reduced. Further, a plurality of ball grid array type semiconductor device forming regions are provided on the wiring substrate, and a part of the wiring of each ball grid array type semiconductor device forming region is partially removed from the wiring of another ball grid array type semiconductor device forming region. It has a multiple structure connected by areas.

A burn-in test apparatus used in the method of manufacturing a ball grid array type semiconductor device according to the present invention comprises: a wiring board having wiring on a main surface and a back surface; a semiconductor chip fixed to the main surface of the wiring substrate; Connecting means for electrically connecting the electrodes of the semiconductor chip to the wiring of the wiring board; and sealing formed of a resin provided so as to be attached to the main surface side of the wiring board and covering the semiconductor chip and the connecting means. A ball having a body and a plurality of protruding electrodes provided on the back surface of the wiring substrate, wherein the surface of the protruding electrode does not include an oxide film formed by being exposed to a high-temperature atmosphere during a burn-in test. A burn-in test device used for manufacturing a grid array type semiconductor device, wherein the burn-in test device allows a burn-in board and the wiring board to be freely inserted and removed. Rutotomoni said has a burn chamber and a connector fixed to the burn-in board. In the connector of the burn-in test device of the present invention,
It has a ball grid array type semiconductor device formation region and a removed region to be cut and removed, a burn-in test terminal is provided on one peripheral edge of the removed region, and the burn-in test terminal is partially provided in the removed region. A wiring board having a structure connected to wiring extending from another burn-in test terminal is inserted and removed.

An electronic device incorporating the ball grid array type semiconductor device of the present invention includes a wiring board having wiring on a main surface and a back surface, a semiconductor chip fixed to the main surface of the wiring substrate, and an electrode of the semiconductor chip. Connecting means for electrically connecting the wiring board and the wiring of the wiring board; a sealing member provided to be attached to the main surface side of the wiring board and made of a resin covering the semiconductor chip and the connecting means; An electronic device in which a plurality of ball grid array type semiconductor devices each having a plurality of protruding electrodes provided on the back surface of a substrate are mounted on a mounting substrate via the protruding electrodes, and the surface of the protruding electrodes is used during a burn-in test. The wiring board does not include an oxide film formed by being exposed to a high-temperature atmosphere, and the side surfaces of the wiring board are covered with an insulating film and some ball grids are formed. Ray type semiconductor device has a structure in contact with the wiring board of the adjacent ball grid array type semiconductor device.

[0029]

According to the above-described means, the ball grid array type semiconductor device of the present invention forms the protruding electrodes after the burn-in test.
Even if a thin native oxide film is generated later, there will be no thick oxide film due to the burn-in test. That is,
The thickness of the oxide film on the surface of the bump electrode is small.
It becomes below.

In the ball grid array type semiconductor device of the present invention, the protruding electrodes are formed in a non-oxidizing atmosphere after the burn-in test.
Even if a thin native oxide film is generated later, there is no thick oxide film due to the burn-in test and the formation of the bump electrode.

In the ball grid array type semiconductor device of the present invention, since only a thin natural oxide film exists on the surface of the bump electrode, the measurement terminal of the motion test and the bump electrode are directly connected during the operation test. As a result, the contact resistance is reduced and the operation test characteristics are stabilized.

In the ball grid array type semiconductor device of the present invention, since only a thin native oxide film exists on the surface of the bump electrode, the solder wettability at the time of mounting is improved, and the reliability of mounting is high. Become.

In the ball grid array type semiconductor device of the present invention, since the side surface of the wiring substrate is covered with the insulating film, even if conductive foreign matter adheres to the side surface of the wiring substrate, the wiring between the wirings of the wiring substrate is not removed. No short circuit occurs.

In the ball grid array type semiconductor device of the present invention, since the side surface of the wiring board is covered with the insulating film, the ball grid array type semiconductor device to be mounted can be contacted and mounted side by side. A ball grid array type semiconductor device capable of reducing (smaller) a mounting area is obtained.

In the method of manufacturing a ball grid array type semiconductor device according to the present invention, a sealing body is adhered to the main surface of the wiring substrate, and then the wiring substrate is subjected to a burn-in test. Since it is provided in a non-oxidizing atmosphere, no oxide film is formed on the surface of the bump electrode formed of solder.

In the method of manufacturing a ball grid array type semiconductor device according to the present invention, a wiring board having a structure in which burn-in test terminals are arranged on one peripheral portion of the wiring board is used. Insertion and removal of the wiring board can be easily and reliably performed, and the burn-in test operation can be performed more efficiently.

In the method of manufacturing a ball grid array type semiconductor device according to the present invention, since the wiring substrate uses a multi-layered wiring substrate in which a plurality of ball grid array type semiconductor devices can be manufactured at one time, the productivity is increased. Is improved.

In the method of manufacturing a ball grid array type semiconductor device according to the present invention, after the removal region of the wiring substrate is cut and removed, the side surface of the wiring substrate is covered with the insulating film, so that foreign matter adheres in the subsequent process. However, short-circuiting between the wirings of the wiring board (wiring in the lamination direction) can be prevented, and the manufacturing yield can be improved.

In the method of manufacturing a ball grid array type semiconductor device according to the present invention, a wiring board comprising a ball grid array type semiconductor device forming region and a removed region is used as a wiring substrate, and a common wiring such as a power supply line is used. Since the structure is interconnected in the removal area, the number of burn-in test terminals can be reduced.

The wiring substrate according to the present invention comprises a ball grid array type semiconductor device forming region and a removed region, and burn-in test terminals are provided side by side on one periphery of the removed region, ie, one periphery of the wiring substrate. In addition, in the removal area, some wirings (wirings that can be shared such as power supply lines) are connected to each other and the number of burn-in test terminals is reduced, so that the burn-in test terminal row And the width of the wiring board can be reduced. Shorter wiring boards lead to shorter connectors for burn-in test equipment.

In the wiring board according to the present invention, since a ball grid array type semiconductor device forming region and a removed region are provided, and the ball grid array type semiconductor device forming region is provided in a multiple structure, a plurality of regions are provided.
The number of burn-in test processes can be increased, and the burn-in test efficiency can be improved. Further, the tips of the wires that can be shared and extend from the respective ball grid array type semiconductor device formation regions are connected to the wires connected to the burn-in test terminals in the removal region so as to reduce the number of burn-in test terminals. Therefore, the length of the wiring board having the multiple structure can be reduced.

In the burn-in test apparatus used in the method of manufacturing a ball grid array type semiconductor device according to the present invention, a plurality of ball grid array type semiconductor devices are mounted simply by mounting one edge of a plate-shaped wiring board on a connector. As a result, the workability of the burn-in test operation can be improved.

In the electronic device incorporating the ball grid array type semiconductor device of the present invention, the ball grid array type semiconductor device is mounted on the mounting substrate via an external electrode having no oxide film by a burn-in test.
The wettability of the solder constituting the wiring of the mounting board and the external electrodes is improved, and the reliability of mounting is improved.

Further, in the electronic device of the present invention, since the ball grid array type semiconductor device is mounted on the mounting substrate with the insulating film provided on the side surface of the wiring substrate,
Even if foreign matter adheres to the side surface of the wiring board, a short circuit between the wirings on the wiring board does not occur.

Further, in the electronic device of the present invention, since the side surface of the wiring substrate of the ball grid array type semiconductor device mounted on the mounting substrate is covered with the insulating film, a plurality of ball grid array type semiconductor devices can be placed in close proximity. For deployment implementation,
Adjacent ball grid array type semiconductor devices can be placed in contact arrangement and mounted, and the mounting area can be reduced or the mounting substrate can be reduced, that is, the electronic device can be reduced in size.

[0046]

An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a flowchart showing each manufacturing process according to a method for manufacturing a BGA type semiconductor device according to an embodiment of the present invention, and FIG. 2 is a front view showing a part of the BGA type semiconductor device of the present embodiment in section. 3 to 17 are diagrams relating to each manufacturing process of the BGA type semiconductor device including an operation test (functional test), and FIGS. 3 to 9 are diagrams relating to each manufacturing process before the burn-in test. In the present invention, as shown in FIG. 15, an external electrode, that is, a protruding electrode is formed after the burn-in test. FIGS. 18 to 20 each show a part of the electronic device of the present invention.
Is a cross-sectional view showing a state in which the BGA type semiconductor device of the present invention is mounted on a mounting board, and FIG. 20 is a schematic cross-sectional view showing a state in which a plurality of BGA type semiconductor devices of the present invention are mounted close to each other so as to contact each other. .

In this embodiment, a 1 Mbit (32 Kbit × 36) SRAM (Static Random Access Memory) for a cache memory is used.
An example in which the present invention is applied to a high-speed memory including an access memory (Access Memory) will be described. This high-speed memory, that is, a ball grid array type semiconductor device (BGA type semiconductor device)
Has a structure in which a sealing body made of a resin (resin) is attached to the main surface side of the wiring substrate, and projecting electrodes are formed in an array on the back surface side. In addition, although this is not particularly limited, the protruding electrodes 9 forming the ball grid array have, for example, 7 rows and 17 columns, and have a total of 119 terminals. The breakdown of the terminals
The signal (I / O) has 36 terminals, the clock has 4 terminals, the address has 14 terminals, the power supply has 15 terminals, the ground (GND) has 15 terminals, and the other 35 terminals. The pitch of the protruding electrodes 9 is 1.27 mm.

The BGA semiconductor device (plastic BGA semiconductor device) 10 of the present invention has a structure as shown in FIG. 2 and is manufactured through the steps shown in the flowchart of FIG. That is, the BGA type semiconductor device 10
Preparation of wiring board, fixing of semiconductor chip, electrical connection [wire bonding], sealing, burn-in test, formation of protruding electrode [solder bump] in non-oxidizing atmosphere, singulation of wiring board, insulation of wiring board side, Final inspection (operation test),
It is manufactured through each process of product completion [BGA type semiconductor device]. As is clear from this flowchart, the present invention avoids the phenomenon of oxidizing the surface of the projecting electrode due to the high temperature atmosphere during the burn-in test by forming the projecting electrode after the burn-in test. A major feature is to prevent the formation of a thicker oxide film.

The appearance of the BGA type semiconductor device 10 is as follows.
A wiring board 1 made of a rectangular plate, and a main surface 1 of the wiring board 1
The sealing body (package) 7 formed of a resin (resin) provided on the side a, the projecting electrodes 9 arranged in an array on the back surface 1b side of the wiring board 1, and the side surface of the wiring board 1 The insulating film 12 is covered. In the present invention,
Covering the side surface of the wiring board 1 with the insulating film 12 is also one of the measures for preventing a short circuit on the side surface of the wiring board due to adhesion of foreign matter.

As shown in FIGS. 2 and 6, the wiring board 1 has a four-layer structure in which wirings 4 also exist in the main surface 1a and the back surface 1b between insulators 14 made of glass epoxy resin and in the intermediate layer. Although it is not particularly limited, it is equivalent to FR-4 of NEMA standard.
The main surface 1 a and the back surface 1 b of the wiring board 1 are partially covered with the solder resist film 19. Each wiring 4
Is formed by forming a copper foil in a desired pattern, and has a thickness of, for example, about 10 μm. The dimensions of the wiring board 1 are not particularly limited, but are, for example, 14 mm in length, 22 mm in width, and 0.6 mm in thickness. In a portion exposed from the solder resist film 19, the bonding pad 5 and the chip fixing portion 26 are formed on the main surface 1a side, and the bump electrodes 9 (also referred to as solder bumps 9a in composition and external electrodes 9b in function) are formed on the back surface 1b side. The electrode 8 serves as a pedestal for forming.
As shown in FIG. 2, predetermined portions of the upper and lower wirings 4 are electrically connected to each other by conductors 13 embedded in through holes. In the wiring 4, the main surface 1a and the back surface 1b of the wiring board 1 serve as signal wiring, the second layer from the top serves as a ground wiring, and the third layer from the top serves as a power supply line.

The semiconductor chip 2 is fixed on the chip fixing portion 26 at the center of the main surface 1a of the wiring board 1 via an adhesive 25 such as Ag paste. An electrode 3 before Symbol semiconductors chip 2, the bonding pad 5 is the tip portion of the wiring 4 are connected by electrical connection means 6. In the case of this embodiment, they are connected by a conductive wire 6 made of gold.

The sealing body (package) formed so as to be adhered to the main surface 1a side of the wiring board 1 is not particularly limited, but is formed by transfer molding and includes the semiconductor chip 2, the wires 6, the bonding pads 5 and the like. And so on.

On the back surface 1b side of the wiring board 1,
The electrodes 8 are arranged vertically and horizontally (7 rows and 17 columns), and a spherical protruding electrode 9 is provided on the electrode 8. The projecting electrode 9 becomes a solder bump 9a,
It serves as an external electrode 9b of the A-type semiconductor device 10.

On the other hand, this is one of the features of the present invention. As shown in FIG. 2, the protruding electrode 9 has only a thin oxide film on its surface at the stage of a finished product. This is caused by a method of manufacturing a semiconductor device described later, but by forming (attaching) the protruding electrode 9 in a non-oxidizing atmosphere after performing a burn-in test. Therefore,
The reliability of the operation test (functional test), which is the final inspection of the BGA type semiconductor device 10, and the mounting are improved. That is, in the operation test and the mounting stage, the oxide film existing on the surface of the bump electrode 9 is a natural oxide film, which is extremely thin. That is, since the BGA type semiconductor device 10 of the present invention forms the protruding electrode 9 after the burn-in test, even if a thin natural oxide film is formed on the surface of the formed protruding electrode 9 later, the oxide film becomes thicker during the burn-in test. No film is formed. In other words, the oxide film on the surface of the bump electrode
The thickness is less than the thickness of the thin native oxide film.

On the other hand, the BGA type semiconductor device 10 of this embodiment
In this embodiment, an insulating film 12 made of an epoxy resin is provided on the side surface of the wiring board 1 to cover and electrically protect the end surface of the wiring 4 exposed by cutting. In the structure in which the insulating film 12 is provided on the side surface of the wiring board 1, the wiring board 1
Even if foreign matter adheres to the side surface of the semiconductor device, short circuit of the wiring 4 due to the foreign matter can be prevented.

Next, the BGA type semiconductor device 1 of this embodiment
0 will be described with reference to the flowchart of FIG. First, the wiring substrate 1 is prepared as shown in FIGS. As shown in FIG. 6, the wiring board 1 has a four-layer multilayer wiring board structure (FR-4 of NEMA standard) exposing the wiring 4 on the main surface 1a and the back surface 1b, and has a thickness of 0.6 mm. I have. Each wiring 4 is formed by forming a copper foil into a desired pattern.
It is about the thickness. Here, the same reference numerals are used for the wiring in the inner layer. The upper and lower wirings 4 are appropriately electrically connected by conductors 13 filled in through holes. The wiring board 1 shown in FIG. 6 has the multiple structure shown in FIG. 5, and a plurality of BGA type semiconductor devices 10 can be manufactured at the same time. The wiring substrate 1 is a ball grid array type semiconductor device formation region (BGA type semiconductor device formation region 20).
And a rectangular plate formed by the removal region 21 extending around the BGA type semiconductor device formation region 20 and a part of the removal region 21, that is, the wiring board 1
On one side, burn-in test terminals 22 are provided at an equal pitch. Further, the surface of the wiring 4 to which the protruding electrodes 9 and the wires 6 are attached has a copper plating layer having a thickness of 15 μm, a nickel plating layer having a thickness of 5 μm,
The thickness of the gold plating layer is provided.

The main surface 1 a and the back surface 1 of the wiring board 1
The surface b is covered with an insulating solder resist film 19 (regions indicated by dots in FIG. 4), and necessary portions have been removed. For this reason, in the region where the solder resist film 19 has been removed, the surface of the insulator 25 constituting the wiring 4 and the wiring board 1 is exposed. Wiring board 1
The wiring 4 exposed on the main surface 1a side constitutes a chip fixing portion 26 for fixing the semiconductor chip 2 and a bonding pad 5 for connecting the connection means 6, and the wiring 4 exposed on the back surface 1b side has a solder bump 9a. An electrode 8 to be formed is formed.

Further, as one of the features of the present invention, the wiring substrate 1 has a pattern in which the BGA type semiconductor device forming region 20 exists in the internal region of the removal region 21. Then, burn-in test terminals 22 are provided at an equal pitch on one edge of the removal region 21 (one edge which is one side of the wiring board 1). The burn-in test terminal 22 is connected to the bonding pad 5 disposed close to the outside of the region where the semiconductor chip 2 is fixed by the wiring 4. In the removal region 21, the wiring 4 that can share the burn-in test terminal 22 is not directly connected to the burn-in test terminal 22, but the tip is connected to another shareable wiring 4. This allows
As shown in FIG. 4, the power supply terminal (V
_CC ) is one, and the ground (G
ND) terminal (V _SS ) is one. Also, four clock terminals (C) are required, and one signal (I / O) terminal (A ₀ , A ₂ -A _n ) requires 36 terminals.
There are eight terminals. The remaining terminals are directly connected to the bonding pads 5 via the wirings 4. Thus, the length of the wiring board 1 in the terminal row direction in which the burn-in test terminals 22 are arranged can be reduced. The reduction in the length of the wiring board 1 in the terminal row direction leads to a reduction in the length of a connector attached to a burn-in board of a burn-in test device to be described later, leading to a reduction in the size of the burn-in chamber.

The wiring board 1 having the multiple structure shown in FIG.
The wiring 4 extending from the GA type semiconductor device formation region 20 also
The burn-in test terminal 22 that can be shared can be connected in the removal area 21. In the case of the wiring board 1 having a multiple structure, the reduction of the length of the wiring board 1 in the terminal row direction becomes much larger. Therefore, the reduction in the length of the connector attached to the burn-in board of the burn-in test apparatus and the reduction in the size of the burn-in chamber are further improved.

Next, as shown in FIG. 3, an epoxy resin-based adhesive paste 30 as an adhesive is applied dropwise to a central portion of the main surface 1a of the wiring board 1 by a dispenser (not shown).

Next, as shown in FIGS. 7 and 8, the adhesive paste 30 is provided at the center of the main surface 1a of the wiring board 1.
Although not particularly limited, the semiconductor chip 2 having a thickness of 0.28 mm is fixed by using the method. The semiconductor chip 2
Constitutes a high-speed memory. In addition, the adhesive paste 30 is cured to form a solid adhesive body 31.

Next, as shown in FIG. 7, the electrodes provided on the periphery of the upper surface of the semiconductor chip 2 and the corresponding bonding pads 5 at the inner ends of the wirings 4 are connected by electrical connection means. . That is, the electrode 3 and the bonding pad 5 are electrically connected by a conductive wire 6 made of gold (in FIG. 8, the electrode 3, the bonding pad 5, and the electrode 8 are connected).
Etc. are omitted.

Next, as shown in FIG. 9, the main surface side of the wiring board 1 is
A package 7 made of resin is provided so as to stick. The package 7 seals the semiconductor chip 2, the bonding pads 5, the wires 6, and the like on the main surface 1a side of the wiring board 1. The height of the package 7 is about 0.9 mm.

Next, as shown in FIG. 10 and FIG. 11, the wiring board with package 32 is mounted on a connector 41 attached to a burn-in board 40 arranged in a burn-in chamber of a burn-in test apparatus (not shown) to perform a burn-in test. Is performed. The test atmosphere is an air atmosphere, but the temperature is 100 ° C., and the test time is 100 hours.

Since the wiring board with package 32 only needs to be inserted into and removed from the connector 41 at one peripheral side having the burn-in test terminal 22, the lid is attached after the BGA semiconductor device is mounted like an IC socket. There is no such work, and workability is improved. Also, actually, FIG.
As shown in FIG. 2 and FIG. 13, a burn-in board 40 of the burn-in test apparatus has a structure in which a burn-in board 40 is set up vertically, and connectors 41 are attached to the burn-in board 40 in multiple stages. The connector 41 has a multi-layered wiring board 1 as shown in FIG.
Is attached. The use of the wiring board 1 having a multiple structure enables a large number of burn-in tests to be performed at once,
This leads to improvement in the work efficiency of the burn-in test.

Next, as shown in FIG.
The BGA type semiconductor device shaped product 45 is taken out (formed) by cutting and removing the removal region 21 of FIG.

Next, the BGA type semiconductor device shaped product 4
5, that is, the protruding electrodes 9 are attached (formed) to the back surface 1b of the wiring board 1 by a common transfer method. The transfer method is a method in which the wiring substrate 1 is turned upside down and the back surface 1b is turned to the upper surface, and then a solder ball is placed on the electrode 8 using a jig and reflow is performed. Since the periphery of the electrode 8 is surrounded by the solder resist film 19, each solder ball is placed almost correctly on the electrode 8. The reflow is performed under a non-oxidizing atmosphere, for example, in order to prevent an oxide film from being formed on the surface of the projection electrode 9 to be formed.
This is performed under a nitrogen atmosphere. As a result, the protruding electrodes 9 formed on the back surface 1b of the wiring substrate 1 are not exposed to the high-temperature atmosphere of the burn-in test, and are formed in a non-oxidizing atmosphere when the protruding electrodes 9 are formed. No film will be generated. However, when the solder made of Pb-Sn is left in the air, a natural oxide film is generated. This natural oxide film is extremely thin, for example, 0.5 μm. FIG. 15 shows a BGA type semiconductor device 10 in which protruding electrodes 9 are formed on the back surface 1 b of the wiring board 1.

Next, as shown in FIG. 2, an insulating film 12 is provided on the side surface of the wiring board 1 of the BGA type semiconductor device 10. This is provided to electrically protect the tip of the wiring 4 exposed on the side surface of the wiring board 1. This insulating film 12
Accordingly, it is possible to prevent a short circuit due to foreign matter adhesion between the wirings 4 not only in the plane direction but also in the stacking direction perpendicular to the plane.

Next, the BGA type semiconductor device 10 is subjected to an operation test (functional test) as a final inspection. FIG.
As shown in FIG. 1, the BGA type semiconductor device 10
Is attached to the socket 50 of the operation test apparatus with the side down. The socket 50 includes a socket main body 51 in which measuring terminals (pins) 18 are arranged in an array, and a lid 53 that rotates about an axis 52 with respect to the socket main body 51. Therefore, with the lid 53 opened,
Put the BGA type semiconductor device 10 in the socket body 51,
When the lid 53 is closed, the protruding electrode 9 on the back surface 1b side of the wiring board 1 comes into contact with the measurement terminal 18 as shown in FIG. The lid 53 is a package 7 of the BGA type semiconductor device 10.
Is pushed down, the tip of the measuring terminal 18 bites into the protruding electrode 9. In the case of the BGA type semiconductor device 10 of this embodiment, since there is only the oxide film 17 made of a thin natural oxide film on the surface of the bump electrode 9 as described above, the measurement is performed by pushing down (closing) the lid 53. The tip of the terminal 18 surely penetrates the oxide film 17 on the surface of the bump electrode 9 so that accurate electrical contact can be obtained. Precise electrical contact results in stability of the operation test.

Such a BGA type semiconductor device 10 is shipped as it is or is built in an electronic device before being shipped. However, in any case, the extremely thin oxide film 17 on the surface of the protruding electrode 9 formed by the solder bumps 9a allows the solder to have good wettability in mounting, and enables accurate and highly reliable mounting.

Next, the BGA type semiconductor device 1 of this embodiment
The electronic device 60 incorporating the “0” will be described. FIG.
FIG. 19 is a diagram showing an electronic device 60 of the present invention. The BGA type semiconductor device 10 of the present invention is mounted on a mounting board 15. In mounting, the BGA type semiconductor device 10 is mounted on the connection pads 16 arranged in an array on the main surface of the mounting substrate 15 so that the protruding electrodes 9 of the BGA type semiconductor device 10 are overlapped, and then reflowed.
The connection pad 16 and the electrode 8 are connected. The molten solder joint 65 has a large thickness because the bump electrode 9 of the BGA type semiconductor device 10 of the present invention does not have a thick oxide film on its surface.
Alternatively, since it has only a thin natural oxide film, the electrical contact resistance is reduced, and the mounting reliability is increased.

In the electronic device 60 of the present invention,
Since the insulating film 12 is provided on the side surface of the wiring board 1 of the mounted BGA type semiconductor device 10, the wiring board 1
Even if a foreign object or the like comes into contact with the side surface of the electronic device 60, an electrical short circuit does not occur, and the reliability of the electronic device 60 is improved.

The electronic device 60 shown in FIG. 20 utilizes the fact that the insulating film 12 is provided on the side surface of the wiring board 1. That is, the insulating film 12 is provided on the side surface of the wiring board 1 of the BGA type semiconductor device 10 of the present invention,
Even if conductive foreign matter adheres, the characteristics are not affected. Therefore, when a plurality of BGA type semiconductor devices 10 are mounted close to each other on the mounting board 15, as shown in FIG.
Even if the ends of the wiring substrate 1 of the semiconductor device 10 are brought into contact with each other, the presence of the insulating film 12 provides electrical insulation. As a result, a plurality of BGA type semiconductor devices 10
, The contact arrangement mounting becomes possible.

The following effects can be obtained in the BGA type semiconductor device according to the present embodiment, the method of manufacturing the same, the wiring board used in the method, the burn-in test apparatus, and the electronic device incorporating the BGA type semiconductor device. Can be. The effect is explained for each object.

(BGA type semiconductor device) (1) In the BGA type semiconductor device of the present embodiment, since a protruding electrode is formed after the burn-in test, a thin natural oxide film is generated later on the surface of the formed protruding electrode. Even so, there is no thick oxide film due to the burn-in test.

(2) The BGA type semiconductor device of this embodiment is
Since the bump electrode is formed in a non-oxidizing atmosphere after the burn-in test, even if a thin natural oxide film is formed on the surface of the formed bump electrode, a thick oxide film caused by the burn-in test and the bump electrode formation is formed. Will not exist.

(3) The BGA type semiconductor device of this embodiment is
Since only a thin oxide film exists on the surface of the protruding electrode, the contact resistance is reduced when the measurement terminal of the operation test and the protruding electrode are in direct contact during the operation test, and the operation test characteristics are stable. .

(4) The BGA type semiconductor device of this embodiment is
Since only a thin oxide film is present even on the surface of the bump electrode, solder wettability during mounting is improved, and mounting reliability is increased.

(5) In the BGA type semiconductor device of this embodiment, since the side surface of the wiring board is covered with the insulating film, even if conductive foreign matter adheres to the side surface of the wiring board, the wiring board is laminated. The short circuit between the respective wirings does not occur.

(6) In the BGA type semiconductor device of this embodiment, since the side surface of the wiring board is covered with the insulating film, even if foreign matter adheres to the side surface of the wiring board, the gap between the wiring of the wiring board ( Short-circuiting in the wiring direction including the lamination direction) can be prevented.

(7) In the BGA type semiconductor device of this embodiment, since the side surfaces of the wiring board are covered with the insulating film, the BGA type semiconductor devices to be mounted next to each other can be contacted and mounted. Smaller mounting area (smaller)
Becomes possible.

(Method of Manufacturing BGA-Type Semiconductor Device) (1) In the method of manufacturing the BGA-type semiconductor device of the present embodiment, after a sealing body is attached to the main surface of the wiring board,
Since a wiring substrate is subjected to a burn-in test and thereafter a protruding electrode is provided on the back surface of the wiring substrate, an oxide film caused by the burn-in test is not formed on the surface of the protruding electrode formed by solder.

(2) In the method of manufacturing a BGA type semiconductor device according to the present embodiment, after a sealing body is attached to the main surface of the wiring substrate, a burn-in test is performed on the wiring substrate, and then a projection is formed on the back surface of the wiring substrate. Since the electrodes are provided in a non-oxidizing atmosphere, no oxide film is formed on the surface of the bump electrode formed by soldering during the burn-in test or the bump electrode formation.

(3) The wiring substrate used in the method of manufacturing the BGA type semiconductor device of the present embodiment includes a BGA type semiconductor device forming region and a removed region, and burns in at one edge of the removed region (wiring substrate). Since the test terminals are arranged side by side, the wiring board can be directly inserted into and removed from the burn-in test connector, so that the efficiency of the burn-in test operation is improved.

(4) The wiring board used in the method of manufacturing a BGA type semiconductor device of this embodiment has a structure including a BGA type semiconductor device forming region and a removed region.
Since the common wiring such as a power supply line is connected to each other in the removal area, the number of burn-in test terminals can be reduced, and the number of wiring boards to be inserted into and removed from the burn-in test connector is reduced. Workability is improved. Also,
As described above, the width of the wiring board on which the burn-in test terminals are provided (periphery of the terminal arrangement) can be reduced (the width of the terminal arrangement perimeter of the wiring board is reduced). By reducing the size of the burn-in room, it is possible to reduce the power usage fee.

(5) The wiring board used in the method of manufacturing the BGA type semiconductor device of the present embodiment has a large number of BGA type semiconductor device forming regions arranged in a line so that a plurality of BGA type semiconductor devices can be manufactured at one time. Productivity is improved by using a multiple structure.

(6) The use of a multi-layered wiring board makes it possible to shorten the peripheral width of the terminal arrangement of the wiring board, to shorten the burn-in test connector and to reduce the size of the burn-in chamber. As described above, it is also possible to reduce the power usage fee.

(7) In the method of manufacturing a BGA type semiconductor device according to the present embodiment, the side surfaces of the wiring board are covered with an insulating film after the burn-in test step, the protruding electrode forming step, and the cutting and removing step of the removal area of the wiring board. Therefore, even if foreign matter adheres to the side surface of the wiring board thereafter, a short circuit between each wiring of the wiring board (wiring in the lamination direction) can be prevented, and an improvement in manufacturing yield can be achieved.

(8) In the wiring board used in the method of manufacturing the BGA type semiconductor device according to the present embodiment, the burn-in test terminals are provided side by side on one edge of the removal area. Some wirings (wirings that can be shared such as power supply lines) are connected to each other, so that the number of burn-in test terminals is reduced. Therefore, the terminal array peripheral width of the wiring board can be reduced, the burn-in test connector can be shortened, and the burn-in chamber can be reduced in size, and the power usage fee can be reduced as described above. .

(Wiring Substrate) (1) The wiring substrate used in the method of manufacturing the BGA type semiconductor device of the present embodiment includes a BGA type semiconductor device forming region and a removed region, and the removed region is formed like a power supply line. Some of the wirings are electrically connected to each other and the number of terminals for the burn-in test is shared, so that the number of terminal arrangements can be reduced.

(2) The wiring substrate used in the method of manufacturing the BGA type semiconductor device of the present embodiment includes a BGA type semiconductor device formation region and a removal region, and a plurality of the BGA type semiconductor device formation regions are provided. Because of the multiple structure, productivity is increased. In addition, the number of burn-in tests can be increased.

(Burn-In Test Apparatus) (1) The burn-in test apparatus used in the manufacture of the BGA type semiconductor device of this embodiment can improve the workability of the burn-in test work by using the above-mentioned wiring board, and can improve the burn-in test. The test connector can be shortened and the burn-in chamber can be narrowed, and the burn-in test apparatus can be downsized.

(Electronic Device) (1) In an electronic device in which the BGA type semiconductor device of this embodiment is mounted on a mounting board, the mounting portion of the BGA type semiconductor device is formed by a bump electrode made of a solder bump.
Since there is no oxide film generated on the surface of the solder bump at the time of the burn-in test and at the time of forming the protruding electrode, the wettability of the solder on the connection pads of the mounting board becomes good, and the mounting failure due to insufficient solder wetness does not occur. , The reliability of the mounting is increased.

(2) In an electronic device in which the BGA type semiconductor device of this embodiment is mounted on a mounting board,
Since the side surface of the wiring substrate of the die-type semiconductor device is covered with the insulating film, even if foreign matter adheres to the side surface of the wiring substrate, a short circuit of the wiring reaching the side surface of the wiring substrate does not occur. Increases reliability.

(3) In an electronic device in which a plurality of BGA type semiconductor devices of this embodiment are mounted close to a mounting board, the side surfaces of the wiring board of the BGA type semiconductor device are covered with an insulating film. Adjacent BGA type semiconductor devices can be arranged in contact arrangement and mounting. As a result, in the case of the same mounting substrate, more BGA type semiconductor devices can be mounted. When the number of BGA type semiconductor devices to be mounted is limited, the size of the mounting substrate can be reduced.

Although the invention made by the inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and may be variously modified without departing from the gist thereof. Needless to say,
In the above-described embodiment, in the operation test, one peripheral edge of the wiring board is attached to the socket of the burn-in test apparatus, and electrical contact between the measurement terminal of the socket and the burn-in test terminal provided on one peripheral edge of the wiring board is obtained. But Even if the burn-in test is performed by bringing the measurement terminals of the socket of the burn-in test device into contact with the electrodes formed on the back surface of the wiring board before forming the protruding electrodes arranged in an array, the same effect as in the above embodiment can be obtained. Can be

In the above description, the case where the invention made by the present inventor is mainly applied to the manufacturing technology of the plastic ball grid array type semiconductor device, which is the application field as the background, has been described. Absent. For example, the sealing body may be a metal sealing body or another sealing body such as ceramic.
INDUSTRIAL APPLICABILITY The present invention can be applied to an electronic component or an electronic device in which protruding electrodes that are easily oxidized are arranged in an array on at least one surface of a wiring board.

[0098]

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows. In a method of manufacturing a ball grid array type semiconductor device (BGA type semiconductor device) having a sealing body on a main surface of a wiring board and projecting electrodes in an array on a back surface, the sealing body is provided on a main surface side of the wiring board. After the formation, a bump electrode made of a solder bump is formed in a non-oxidizing (nitrogen) atmosphere, and then an operation test is performed. Thus, the oxide film on the surface of the bump electrode is only a thin natural oxide film, and the contact resistance between the measurement terminal and the bump electrode is reduced during the operation test, and the test is stabilized. In addition, since the BGA type semiconductor device is mounted on the bump electrode having a thin surface oxide film, the solder bumps are not insufficiently wet, and the mounting reliability is improved.

[Brief description of the drawings]

FIG. 1 is a flowchart showing a manufacturing process of a BGA type semiconductor device according to one embodiment of the present invention.

FIG. 2 is a front view, partly in section, of the BGA type semiconductor device according to the present embodiment.

FIG. 3 is a schematic view showing a chip fixed state in manufacturing the BGA type semiconductor device of the present embodiment.

FIG. 4 is a schematic plan view of a wiring board used for manufacturing the BGA type semiconductor device of the present embodiment.

FIG. 5 is a schematic plan view of a wiring substrate having a multiple structure used for manufacturing the BGA type semiconductor device of the present embodiment.

FIG. 6 is a schematic cross-sectional view showing a part of a wiring board having a multiple structure used for manufacturing the BGA type semiconductor device of the present embodiment.

FIG. 7 is a schematic plan view showing a wiring board on which a semiconductor chip has been attached and wire bonding has been performed in the manufacture of the BGA type semiconductor device of the present embodiment.

FIG. 8 is a schematic cross-sectional view showing a wiring board in a state where a semiconductor chip has been mounted and wire bonding has been performed in the manufacture of the BGA type semiconductor device of the present embodiment.

FIG. 9 is a front view showing a state in which the main surface side of the wiring board is covered with a sealing body in manufacturing the BGA type semiconductor device of the present embodiment.

FIG. 10 is a schematic front view showing a burn-in test state of a single wiring board on which a semiconductor chip is mounted in manufacturing the BGA type semiconductor device of the present embodiment.

FIG. 11 is a schematic side view showing a burn-in test state of a single wiring board on which a semiconductor chip is mounted in manufacturing the BGA type semiconductor device of the present embodiment.

FIG. 12 is a schematic front view showing a burn-in test state of a wiring board having a multiple structure in which semiconductor chips are mounted in manufacturing the BGA type semiconductor device of the present embodiment.

FIG. 13 is a schematic side view showing a burn-in test state of a wiring board having a multiple structure in which semiconductor chips are mounted in manufacturing the BGA type semiconductor device of the present embodiment.

FIG. 14 is a schematic diagram showing a state in which the peripheral portion of the wiring board is cut and removed to form a wiring board with a sealing body in the manufacture of the BGA type semiconductor device of this example.

FIG. 15 is a front view showing a completed BGA type semiconductor device in which external electrodes are formed on the back surface of the wiring board in the manufacture of the BGA type semiconductor device of the present example.

FIG. 16 is a schematic diagram showing a function test state of the BGA type semiconductor device in manufacturing the BGA type semiconductor device of the present example.

FIG. 17 is a schematic enlarged cross-sectional view showing a contact state between an external electrode and a measurement terminal during a function test of the BGA type semiconductor device in the manufacture of the BGA type semiconductor device of the present example.

FIG. 18 is a cross-sectional view showing a mounted state of the BGA type semiconductor device according to the present embodiment, that is, a part of the electronic device of the present invention.

FIG. 19 is an enlarged sectional view showing a part of the electronic device according to the present embodiment.

FIG. 20 is a schematic cross-sectional view showing a state where a plurality of BGA type semiconductor devices according to the present embodiment are mounted close to each other so as to be in contact with each other.

FIG. 21 is a schematic sectional view showing a conventional BGA type semiconductor device.

FIG. 22 is a schematic sectional view showing a mounting state of a conventional BGA type semiconductor device.

FIG. 23 is a view illustrating a conventional BGA type semiconductor device.
FIG. 4 is a schematic enlarged cross-sectional view showing a contact state between an external electrode and a measurement terminal during a function test of the GA semiconductor device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Wiring board, 1a ... Main surface, 1b ... Back surface, 2 ... Semiconductor chip (semiconductor element), 3 ... Electrode, 4 ... Wiring, 5 ... Bonding pad, 6 ... Wire (connection means), 7 ... Sealing body ( 8) Electrode, 9 ... Projection electrode, 9a ... Solder bump, 9b ... External electrode, 10 ... BGA type semiconductor device (plastic BGA type semiconductor device), 12 ... Insulating film,
13 ... conductor, 15 ... mounting board, 16 ... connection pad, 17
... Oxide film, 18 ... Measurement terminal, 19 ... Solder resist film, 20 ... BGA type semiconductor device formation area, 21 ... Removed area, 22 ... Burn-in test terminal, 25 ... Adhesive, 26
... chip fixing part, 30 ... adhesive paste, 31 ... adhesive body,
32 wiring board with package, 40 burn-in board, 41 connector, 42 burn-in room, 45 B
GA type semiconductor device form product, 50: socket, 51: socket body, 60: electronic device, 65: solder joint.

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-5-235061 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 23/12 501

Claims (3)

(57) [Claims] 1. A wiring board, a semiconductor chip fixed to the wiring board, connection means for electrically connecting electrodes of the semiconductor chip and wiring of the wiring board, and the semiconductor chip and the connection means. A semiconductor device having a sealing body made of a covering resin and a plurality of projecting electrodes provided on the wiring substrate, wherein a thickness of an oxide film on a surface of the projecting electrode is exposed to a high-temperature atmosphere during a burn-in test. Formed
A ball grid array type semiconductor device which does not include an oxide film and has a thickness not more than a thickness of a natural oxide film. 2. A step of attaching a semiconductor chip to a wiring board, a step of electrically connecting a wiring of the wiring board and an electrode of the semiconductor chip, and a step of sealing the semiconductor chip and the electrical connection means with a sealing body. A ball grid comprising: a step of covering; a step of performing an accelerated life test by applying an electrical stress to the semiconductor chip; and a step of providing a protruding electrode on the wiring substrate in a non-oxidizing atmosphere after the test step. An array type semiconductor device manufacturing method. 3. A step of attaching a semiconductor chip to a wiring board, a step of electrically connecting a wiring of the wiring board to an electrode of the semiconductor chip, and a step of sealing the semiconductor chip and the electrical connection means with a sealing body. A ball, comprising: a step of covering, a step of performing a burn-in test on the wiring board on which the semiconductor chip is mounted, and a step of providing a projecting electrode on the wiring board in a non-oxidizing atmosphere after the step of performing the burn-in test. A method for manufacturing a grid array type semiconductor device.