JP3309618B2 - X-ray CT system - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray CT apparatus,
In particular, an X-ray CT equipped with an X-ray detector using a semiconductor crystal
It concerns the device.

[0002]

2. Description of the Related Art Japanese Patent Laying-Open No. 3-36744 discloses a multi-channel type X-ray detector used in a medical X-ray CT apparatus. This X-ray detector has one semiconductor crystal and a substrate provided opposite thereto. One common electrode and a plurality of divided electrodes are provided on a surface of the semiconductor crystal facing the substrate. A first bump connected to the common electrode and a plurality of second bumps respectively connected to the divided electrodes are provided on the surface of the substrate facing the semiconductor crystal. Each wiring connected to the first bump and each second bump is provided on the surface of the substrate facing the semiconductor crystal.

[0003] In this X-ray detector, X-rays are incident on the surface of the semiconductor crystal opposite to the surface facing the substrate. That is, the semiconductor crystal is located between the collimator and the substrate. The collimator has a plurality of slits. Each X-ray emitted from each slit is incident on the semiconductor crystal from the X-ray incident surface. Each split electrode takes out charges generated in the semiconductor crystal in proportion to the intensity of the X-ray emitted from each slit. One split electrode detects an electric charge generated by an X-ray incident on the semiconductor crystal from one slit.

Japanese Patent Application Laid-Open No. 2-67999 discloses an X-ray CT.
3 shows a collimator used in the apparatus. This collimator is formed by combining two blocks having a large number of blades formed on the surface thereof by providing a large number of grooves, such that the blades of each block are in contact with each other. Each block is made of a material that can absorb X-ray radiation. The groove between the blades becomes a slit.

[0005]

A multi-channel type X-ray detector having a plurality of X-ray measurement channels in the same semiconductor crystal as disclosed in Japanese Patent Application Laid-Open No. 3-36744 is disclosed in If the maximum range of the secondary electrons generated in the channel is larger than the channel interval, the crosstalk between the channels increases, and there is a problem that the X-ray intensity cannot be measured with high accuracy. Further, if the channel density is increased and the channel interval is reduced in order to shorten the measurement time, crosstalk increases.

In a collimator in which the joint of two blocks is on the same plane as in Japanese Patent Application Laid-Open No. 2-67999, X-rays scattered by the subject pass through the gap between the joints and reach the detector. By incoming streaming, X
There is a problem that the accuracy of the line intensity measurement is reduced.

An object of the present invention, it is possible to improve the measurement accuracy by reducing crosstalk, put the collimator
An object of the present invention is to provide an X-ray CT apparatus capable of reducing streaming .

Another object of the present invention is to provide an X-ray CT apparatus capable of shortening an imaging time.

Another object of the present invention is to provide an X-ray CT apparatus capable of improving the resolution of a tomographic image of a subject.

[0010]

[0011]

According to a first aspect of the present invention, there is provided an X-ray detector comprising: a semiconductor crystal including an electrode and generating electrons and holes upon incidence of X-rays; A wiring connected to the electrode is provided, and a substrate provided to face the semiconductor crystal, one surface of the semiconductor crystal and one surface of the substrate facing a collimator side, one for each slit of the collimator; the X-ray detector is disposed, wherein the semiconductor crystal of the X-ray detector, contact with the substrate facing the adjacent other of said X-ray detector located
The collimator has a plurality of blades projecting to one side.
And a first collimator having a groove formed between blades
Unit and a second collimator unit, wherein the first collimator unit
The end face of the blade is the groove of the second collimator portion
An end face of the blade of the second collimator section
Are in contact with the bottom surfaces of the grooves of the first collimator portion, respectively.
And the blade of the first collimator section and the second
2 A slit is formed between the collimator and the blade.
Lies in that it is.

According to a second aspect of the present invention which achieves the other object, in addition to the features of the first aspect, the wiring is located between the semiconductor crystal and the substrate.

According to another aspect of the present invention, the semiconductor crystal of each of the X-ray detectors has a shape elongated in one direction. The longitudinal direction is arranged in the direction of emission of X-rays from the slit.

According to a fourth aspect of the present invention which achieves the other object, in addition to the features of the third aspect, a plurality of the electrodes are arranged in a longitudinal direction of the semiconductor crystal.

[0015]

[0016]

According to the first aspect of the present invention, the following operations occur. Since one surface of the semiconductor crystal and the substrate face the collimator side, and the semiconductor crystal of each X-ray detector faces the substrate of another adjacent X-ray detector, the X-ray shielding of the substrate X incident on one semiconductor crystal due to the effect
The line is not incident on another semiconductor crystal. As described above, since crosstalk is prevented, measurement noise is reduced, and measurement accuracy of the X-ray detector is improved. Furthermore, the first stiffness
The end face of the meter section blade is at the bottom of the groove of the second collimator section.
The end face of the blade of the second collimator section is
Since it is joined to the bottom of the
All connections between the end of the blade and the bottom of the groove are at the same level
Not located in Streaming that occurs at this junction
Is shielded by at least one blade. Therefore,
Measurement noise can be reduced by reducing the incidence of scattered X-rays on the X-ray detector.
Can be reduced. This allows the resolution of the tomographic image of the subject
Can be further improved.

According to the second aspect of the present invention, the following operation occurs in addition to the operation of the first aspect. Since the wiring connected to the electrode is located between the semiconductor crystal and the substrate, the thickness of the X-ray detector can be reduced. This allows for high density placement of the X-ray detector by reducing the spacing between the slits of the collimator. For this reason, the number of movements of the subject can be reduced, and the imaging time of the subject can be reduced.

According to the third aspect of the present invention, the following operation occurs in addition to the operation of the second aspect. Since the semiconductor crystal has a shape that is long in one direction and the longitudinal direction of the semiconductor crystal is arranged in the direction in which the X-ray exits from the slit of the collimator, the transmission distance of the incident X-ray in the semiconductor crystal increases. . Therefore, the number of electrons and holes generated in the semiconductor crystal increases, and the X-ray detection efficiency increases. This leads to an improvement in the resolution of the tomographic image of the subject.

According to the fourth aspect of the present invention, the following operation occurs in addition to the operation of the third aspect. Since the electrodes are arranged in the longitudinal direction of the semiconductor crystal, the detection efficiency of electrons and holes generated in the semiconductor crystal increases, and the X-ray detection efficiency further increases. The resolution of the tomographic image of the subject is further improved.

[0020]

[0021]

【Example】

(Embodiment 1) An X-ray CT apparatus according to a preferred embodiment of the present invention will be described with reference to FIG.

The X-ray CT apparatus of this embodiment comprises an X-ray generator 1, a scanner 2, a collimator 400, and an X-ray detector 5.
00 etc. The scanner 2 on which the subject 3 is installed
The X-ray generator 1 is installed in a direction to emit X-rays. The collimator 400 is arranged at a position facing the X-ray generator 1 with the subject 3 therebetween. The collimator 400 has a plurality of slits 410 for passing X-rays from a specific direction. The X-ray detector 500 is provided with each slit 4
The slits 400 are provided in the direction of an extension of the slit 400. The signal processing circuit 6 is connected to the X-ray detector 500 by wiring, and receives an electric signal output from the X-ray detector 500. The arithmetic unit 7 includes an X-ray generator 1, a scanner 2
And the signal processing circuit 6 by wiring. Display device 8
Are connected to the arithmetic unit 7 by wiring.

FIG. 1 shows the detailed structure of the X-ray detector 500.

X-ray detector 500 has a substrate 530 and a semiconductor crystal 510 provided to face the substrate. The semiconductor crystal 510 and the substrate 530 have shapes that are long in one direction. On the surface of the semiconductor crystal 510 facing the substrate 530, a positive electrode 511 and a negative electrode 512 are formed.
Generally, a diffusion-type silicon semiconductor is used for the semiconductor crystal 510, and Si, Ge, GaAs, GaSe, Cd
Se, CdTe, HgI ₂ , SiC, C, ZnTe, B
Various materials such as single crystal and polycrystal can be used, including compound semiconductors such as i ₂ S ₃ , PbI ₂ , AlSb, and InS. In this embodiment, an X-ray detector 500 using an n-type semiconductor as the semiconductor crystal 510 will be described. Semiconductor crystal 510
Even if a p-type semiconductor is used, the X-ray detector 500 can be similarly configured.

The substrate 530 is generally formed of a glass epoxy substrate, a paper phenol substrate, or the like. The X-ray shielding effect of the substrate 530 can be increased by adding a substance having a high density and hard to transmit X-rays and electrons (for example, Pb, Au, Ag, Pt, Mo, W, and tungsten carbide) to the substrate. .

The X-ray detector 500 is arranged such that X-rays passing through the slit 410 of the collimator 400 are incident on the semiconductor crystal 510 in the longitudinal direction. Therefore, the substrate 5
30 does not intersect with the extension direction of the slit 410. The semiconductor crystal 510 of each X-ray detector 500 arranged opposite to each slit 420
Substrate 5 of another X-ray detector 500 arranged adjacent to
30. This means that the semiconductor crystals 510 and the substrates 530 are alternately arranged.

Positive electrode 51 provided on semiconductor crystal 510
FIGS. 3 and 4 show a connection state between the first and negative electrodes 512 and the wiring provided on the substrate 530. FIG. Electrode pads 20 and 21 are provided on a surface of substrate 530 facing semiconductor crystal 510. The connection end 22 of the electrode pad 20 is provided to face the positive electrode 511 provided on the semiconductor crystal 510. The connection end 23 of the electrode pad 21 is connected to the semiconductor crystal 510
Is provided so as to oppose the negative electrode 512 provided in the above. Connection end 22
The portions of the electrode pads 20 and 21 other than and 23 are
The wiring pattern extends toward one end in the longitudinal direction of the substrate 530 so as not to contact the other electrode pad. Except for the connection ends 22 and 23, the surfaces of the electrode pads 20 and 21 may be covered with an insulating protective film.

The positive electrode 511 and the negative electrode 512 are metal electrodes provided on the surface of the semiconductor crystal 510 and made of one material selected from Al, Au, Ag, Pt or an alloy thereof. The positive electrode 511 is a semiconductor crystal 510
Provided at the portion of the n @ + diffusion electrode 521 formed therein. Negative electrode 512 is provided at a portion of p + diffusion electrode 522 formed in semiconductor crystal 510. This is for easily connecting the n + diffusion electrode 521 to the electrode pad 531. The negative electrode 512 is negatively biased with respect to the positive electrode 511.

The p + diffusion electrode 522 is formed in the semiconductor crystal 510 by diffusion of acceptor impurities, and the n + diffusion electrode 521 is formed in the semiconductor crystal 510 by diffusion of donor impurities. In order to generate an electric field widely inside the semiconductor crystal 510 and improve the efficiency of charge collection, the p + diffusion electrodes 522 and n
+ Diffusion electrodes 521 are alternately arranged in semiconductor crystal 510. Positive electrodes 511 and negative electrodes 512 are also provided on semiconductor crystal 510 alternately. Positive electrode 511 and negative electrode 51
2 so that the magnitude of the electric field between them is uniform and the efficiency of charge collection is uniform within the semiconductor crystal 510.
1 and the negative electrode 512 are arranged in parallel with each other. Positive electrode 51
The shapes of the negative electrode 1 and the negative electrode 512 are rectangular in this embodiment, but may be other shapes. Further, although the present embodiment has one positive electrode 511 and two negative electrodes 512, the number of these electrodes may be another number as necessary. As shown in FIG. 4, the insulating film 513 is formed on the substrate 5 of the semiconductor crystal 510 except for the portions of the positive electrode 511 and the negative electrode 512.
It is provided on a surface facing 30. This insulating coating 513
Exists between the positive electrode 511 and the negative electrode 512. The formation of the insulating film 513 prevents leakage current between the positive electrode 511 and the negative electrode 512 and protects the semiconductor crystal.

The positive electrode 511 is electrically connected to the connection end 22 of the electrode pad 20 by a conductive adhesive 541 such as a silver paste. Each negative electrode 512 is provided with a conductive adhesive 54.
1 electrically connects to each connection end 23 of the electrode pad 21. By fixing semiconductor crystal 510 to substrate 530 by such connection, X-ray detector 500
Is obtained. Since wire bonding is not used to connect the positive electrode 511 and the negative electrode 512 to the connection terminals 22 and 23, the thickness of the X-ray detector 500 can be significantly reduced. For this reason, the interval between the adjacent slits 410 in the collimator 400 can be reduced, and the interval between the adjacent X-ray detectors 500 can also be reduced. Therefore, the X-ray detector 5
Since 00 can be arranged at high density, the photographing time can be reduced.

The X-rays generated radially from the X-ray generator 1 pass through the subject 3 placed on the scanner 2. The X-ray transmitted through the subject 3 enters each slit 410 of the collimator 400. The collimator 400 prevents the X-ray scattered by the subject 3 from entering the X-ray detector 500. The X-ray that has passed through the slit 410 is incident on the semiconductor crystal 510 of the X-ray detector 500. In the semiconductor crystal 510, a number of electrons and holes corresponding to the X-ray intensity are generated. In this embodiment, the X-ray is applied to the semiconductor crystal 510.
, The number of generated electrons and holes increases. This is because the X-ray transmission distance of the semiconductor crystal 510 is long. Semiconductor crystal 510 of this embodiment
Is a rectangular parallelepiped that is long only on one side, so that even if X-rays enter the semiconductor crystal 510 from a direction other than the longitudinal direction, the distance that the X-rays pass through the semiconductor crystal 510 is short. The number of electrons and holes generated by X-rays incident on the semiconductor crystal 510 from a direction other than the longitudinal direction is small. Therefore, generation of noise due to streaming, crosstalk, and the like is reduced.

A voltage is externally applied between the positive electrode 511 and the negative electrode 512 via the electrode pads 20 and 21. Therefore, the diffusion electrode 521 in the semiconductor crystal 510
An electric field is generated between and the diffusion electrode 522. The generated electrons and holes move to the positive electrode 511 and the negative electrode 512, respectively, according to the electric field. In this embodiment, the semiconductor crystal 51
Since the positive electrodes 511 and the negative electrodes 512 are alternately arranged at 0 and the diffusion electrodes 521 and 522 are formed from the surface of the semiconductor crystal 510 toward the inside thereof, the electric field is distributed over a wide range in the semiconductor crystal 510. Therefore, the collection efficiency of electrons and holes generated by the incidence of X-rays increases. Electrons and holes are positive electrode 511, negative electrode 51
2, the current flows between the positive electrode 511 and the negative electrode 512 and becomes an electric signal. That is, an electric signal is generated in the X-ray detector 500 by the incidence of the X-ray.

The posture of the subject 3 can be changed a plurality of times by rotating the scanner 2. X-rays are emitted to the subject 3 in each posture. For these multiple irradiations, the X-rays that have passed through the subject 3 are reflected by each X-ray detector 5.
00 is measured as described above. As described above, since the X-ray detectors 500 can be arranged with a small interval therebetween, the number of times the scanner 2 is rotated to change the posture of the subject 3 is reduced, and the imaging time of the subject 3 is shortened.

As described above, the X-ray detector 500 generates an electric signal corresponding to the intensity of the incident X-ray. The electric signal is sent to the signal processing circuit 6. The signal processing circuit 6 converts each of the electric signals from the plurality of X-ray detectors 500 and an electric signal serving as correction information (not shown) into digital values, and temporarily converts these digital values to transmission to the arithmetic unit 7. To hold. The arithmetic unit 7 accumulates the data (the digital value) transmitted from the signal processing circuit 6 and performs a reconstruction operation in association with the position information of the scanner to obtain a tomographic image of the subject 3. This tomographic shadow is displayed on the display device 8.

According to the X-ray CT apparatus of this embodiment, the following effects can be obtained.

(1) Each slit 41 of the collimator 400
X-ray detectors 500 correspondingly arranged one for each 0
Of the other two X-ray detectors 500 located adjacent to both sides of the X-ray detector 500
30. Therefore, some X-ray detectors 500
Of X-rays incident on the semiconductor crystal 510 of the other X-ray detectors are the substrates 53 of the other two X-ray detectors 500 located adjacent to both sides thereof.
With the X-ray shielding effect of 0, the other two X-ray detectors 50
0 is not incident on the semiconductor crystal 510. As described above, since the X-ray crosstalk is prevented, the measurement noise is reduced, and the measurement accuracy of the X-ray detector 500 is improved.

(2) Since the longitudinal direction of the semiconductor crystal 510 is arranged in the direction of the extension of the slit 410, the proportion of X-rays transmitted through the semiconductor crystal 510 is reduced. Therefore, the amount of electrons and holes generated in semiconductor crystal 510 by the incident X-rays increases. The increase in the number of electrons and holes further improves the measurement accuracy of the X-ray detector 500.

(3) Since the positive electrodes 511 and the negative electrodes 512 are alternately arranged on the semiconductor crystal 510 and the diffusion electrodes 521 and 522 are provided from the surface of the semiconductor crystal 510 to the inside thereof, the electric field is increased. Occur in a wide range in the semiconductor crystal 510, and the collection efficiency of electrons and holes increases.
This leads to an increase in the X-ray detection efficiency, and can improve the resolution of the tomographic image of the subject 3.

(4) Since the thickness of the X-ray detector 500 is extremely thin, the interval between the slits 410 can be reduced, and the X-ray detector 500 can be arranged at a higher density. For this reason,
The number of changes in the posture of the subject 3 due to the rotation of the scanner 2 is reduced, and the imaging time of the subject 3 is significantly reduced.

In the X-ray CT apparatus, an X-ray detector 501 shown in FIG. 5 may be used instead of the X-ray detector 500. The X-ray detector 501 is provided on the semiconductor crystal 5 of the substrate 530.
A flexible and flexible insulating film 532 is provided on a surface facing 10, and electrode pads 20 and 21 are provided on the insulating film 532. Insulating film 53
2 is significantly thinner than that of the substrate 530. X
When the X-ray detector 500 is mounted at a high density,
Since the distance between them is reduced, the electrode pads 20 and 21
To the signal line (connected to the signal processing circuit 6). However, a flexible insulating film 532 such as the X-ray detector 501 of the present embodiment is used to form the electrode pad 20.
By increasing the lengths of and, an electrical connection point for connection to the subsequent signal processing circuit 6 can be drawn out to a free space. This is because the electrode pads 20 and 2
1 is easily connected to the signal line.

As shown in FIG. 6, if the unit X-ray detector 500 is mounted so that the substrate 530 and the semiconductor crystal 510 are alternately arranged, crosstalk can be prevented by the X-ray shielding effect of the substrate 530, and measurement can be performed. Noise can be reduced and measurement accuracy can be increased.

In the X-ray CT apparatus shown in FIG. 2, an X-ray detector 502 shown in FIG. The X-ray detector 502 is provided for the semiconductor crystal 510.
On the surface opposite to the surface facing the substrate 530 on which the n + diffusion electrode 521 and the p + diffusion electrode 522 are formed, the n + diffusion electrode 5
23 are formed. N + diffusion electrode 523 generates a wider electric field in semiconductor crystal 510. Therefore, the collection efficiency of electrons and holes generated in semiconductor crystal 510 is further improved.

(Embodiment 2) An X-ray CT apparatus according to Embodiment 2 of the present invention will be described with reference to FIG.

The X-ray CT apparatus according to the present embodiment
This is an X-ray CT apparatus in which the X-ray detector 500 is replaced with an X-ray detector 503. The X-ray detector 503 is an X-ray detector 50.
A shielding material 550 made of a substance that hardly transmits X-rays and electrons is bonded to the surface of the substrate 530 of the “0” opposite to the surface facing the semiconductor crystal 510. It is desirable that the material of the shielding member 550 has a high density.
b, Au, Ag, Pt, Mo, W, and tungsten carbide are effective. The other structure of the X-ray detector 503 is the same as the structure of the X-ray detector 500.

In the X-ray CT apparatus of this embodiment, X-ray shielding members are arranged on both side surfaces of all the X-ray detectors 503 in the short direction (the direction orthogonal to the extension of the slit 410). I have. For this reason, in the short direction, each X-ray detector 503 is sandwiched between two X-ray shielding members.

The X-ray CT apparatus of this embodiment can provide the same effects as those of the first embodiment. Further, the X-ray detector 503
Since the X-ray shielding members 550 are arranged on both side surfaces in the short direction, X-rays incident from these side surfaces are reduced, so that the crosstalk of the X-ray detector is further reduced. Therefore, measurement noise is further reduced, and measurement accuracy is further improved.

Embodiment 3 An X-ray CT apparatus according to Embodiment 3 of the present invention will be described with reference to FIGS. X of Example 3
The line CT apparatus is obtained by replacing the collimator 400 in the first embodiment with a collimator 405 shown in FIG. The collimator 405 has a collimator upper portion 420 and a collimator lower portion 430, and has a plurality of slits 410 as through holes formed between the collimator upper portion 420 and the collimator lower portion 430.

The assembly of the collimator 405 will be described with reference to FIG. The collimator upper 420, which is an X-ray absorber,
It has a plurality of blades 412 projecting downward,
A groove 411 is formed between the blades 412. The lower collimator 430, which is an X-ray absorber, has a plurality of blades 414 projecting upward, and a groove 413 is formed between the blades 414. The blade 412 is in the groove 413,
Blades 414 are inserted into grooves 411, respectively. The end face of each blade 412 and 414 is
Or, it is joined to the bottom surface of the 413 by a sealing material 415. The sealing material 415 is an X-ray absorbing material. Slit 41
0 is formed between blade 412 and blade 414.

The X-rays emitted from the X-ray generator 1 pass through the subject 3 and enter the slit 410 of the collimator 405. The slit 410 of the collimator 405 allows only X-rays from a specific direction to pass. The collimator 405 used in this embodiment is a joint 4 between the collimator upper part 420 and the collimator lower part 430 by the sealing material 415.
Since the 16 are not arranged continuously on the same line but are alternately arranged at the upper part and the lower part, streaming can be suppressed. This is because X-rays that have reached the adjacent slit 410 via one joint 416 are blocked by the blade 412 (or the blade 414). In addition, since a sealing material 415 that absorbs X-rays is applied to each joint 416, the intensity of streaming is reduced, and the incidence of scattered X-rays on the X-ray detector 500 can be reduced.

In this embodiment, the effects of the first embodiment can be obtained, and the measurement noise of the X-ray detector can be reduced by suppressing the stripping. The reduction of the measurement noise can further improve the resolution of the tomographic image of the subject 3.

The X-ray detector 500 in this embodiment is
The line detector 501, 502, or 503 may be used instead.

(Embodiment 4) X-ray CT according to Embodiment 4 of the present invention
The apparatus will be described with reference to FIGS. Example 4
The collimator 405 of the third embodiment is replaced with a collimator 401 shown in FIG.

The collimator 401 has a plurality of through holes 416.
Are constructed by stacking a plurality of plates 440 each having a. Board 4
40 is made of a material that absorbs X-rays. Each board 4
40 are arranged such that the respective through holes 416 coincide with each other.
A slit 410 penetrating the collimator 401 is formed by a through hole 416 passing through the plurality of plates 440. Since the collimator 401 has no joint between the slits 410, it is possible to prevent scattered X-rays from being incident on the X-ray detector 500 due to streaming.

In the fourth embodiment, the effects obtained in the first embodiment also occur in addition to the above.

A collimator 402 shown in FIG. 12 may be used instead of the collimator 401 in this embodiment. The collimator 402 is obtained by arranging the slits 410 in the collimator 401 two-dimensionally, and is substantially the same as the collimator 401. Although the collimators in FIGS. 11 and 12 use flat plates, a plurality of curved plates may be overlapped.

[0056]

According to the first aspect of the present invention, the crosstalk can be reduced by the substrate and the measurement accuracy of the X-ray detector can be improved.
And reduce the incidence of scattered X-rays on the X-ray detector,
The resolution of the tomographic image of the subject can be further improved.

According to the second aspect of the invention, in addition to the effect obtained by the first aspect, the imaging time of the subject can be reduced by enabling the X-ray detectors to be arranged at a high density.

According to the third aspect of the invention, in addition to the effect obtained by the second aspect, the X-ray detection efficiency is increased due to the increase in the number of electrons and holes generated in the semiconductor crystal. Resolution is improved.

According to the fourth aspect of the invention, in addition to the effect obtained by the third aspect, since the electrodes are arranged in the longitudinal direction of the semiconductor crystal, the efficiency of detecting electrons and holes generated in the semiconductor crystal is improved. Increase. Therefore, the X-ray detection efficiency is further increased, and the resolution of the tomographic image of the subject is further improved.

[0060]

[Brief description of the drawings]

FIG. 1 is a configuration diagram of an X-ray detector and a collimator of an X-ray CT apparatus according to a first embodiment of the present invention shown in FIG.

FIG. 2 is a configuration diagram of the X-ray CT apparatus according to the first embodiment of the present invention.

FIG. 3 is a schematic diagram showing a bonding state between an electrode provided on a semiconductor crystal and a wiring provided on a substrate in the X-ray detector shown in FIG.

FIG. 4 is a longitudinal sectional view of the X-ray detector shown in FIG.

FIG. 5 is a perspective view of another embodiment of the X-ray detector.

FIG. 6 is a longitudinal sectional view of another embodiment of the X-ray detector.

FIG. 7 is a longitudinal sectional view of another embodiment of the X-ray detector.

FIG. 8 is a longitudinal sectional view of an X-ray detector used in an X-ray CT apparatus according to Embodiment 2 of the present invention.

FIG. 9 is a perspective view of a collimator used in an X-ray CT apparatus according to Embodiment 3 of the present invention.

FIG. 10 is an explanatory diagram showing a manufacturing process of the collimator of FIG. 9;

FIG. 11 is a perspective view of a collimator used in an X-ray CT apparatus according to Embodiment 4 of the present invention.

FIG. 12 is a perspective view of another embodiment of the collimator used in the fourth embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... X-ray generator, 2 ... Scanner, 3 ... Subject, 6 ... Signal processing circuit, 7 ... Calculation device, 8 ... Display device, 20 and 21
... electrode pads, 400, 401, 402, 405 ... collimators, 410 ... slits, 411, 413 ... grooves, 41
2,414: blade, 413: joint, 420: upper collimator, 430: lower collimator, 500, 50
1, 502, 503 X-ray detector, 510 semiconductor crystal, 511 positive electrode, 512 negative electrode, 521 n + diffusion electrode, 522 p + diffusion electrode, 530 substrate.

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shigeru Deumi 7-2-1, Omika-cho, Hitachi City, Ibaraki Prefecture Inside the Energy Research Laboratory, Hitachi, Ltd. (72) Inventor Satoshi Kawasaki 7-2, Omika-cho, Hitachi City, Ibaraki Prefecture No. 1 Hitachi, Ltd. Energy Research Laboratory (72) Inventor Katsutoshi Sato 7-2-1, Omika-cho, Hitachi City, Ibaraki Prefecture Hitachi, Ltd. Energy Research Laboratory (56) References JP-A-6-235770 (JP, A JP-A-56-133361 (JP, A) JP-A-53-101989 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) A61B 6/03 320 G01T 1/20

Claims (4)

(57) [Claims] With a 1. A X-ray generator, a collimator having a plurality of slits X-rays emitted from said X-ray generator to pass through, the X-ray detector for detecting X-rays passing through the slit A substrate provided with a semiconductor crystal including an electrode, wherein the X-ray detector includes an electrode and generates electrons and holes by X-ray incidence, and a wiring connected to the electrode; And the X-ray detector is arranged one for each slit with one surface of the semiconductor crystal and the substrate facing the collimator side, and the semiconductor crystal of each X-ray detector is adjacent to the X-ray detector. and has the substrate facing the other of said X-ray detector positioned, the collimator has a plurality of blades and projecting into one
First collimators each having a groove formed between the blades
A first collimator, and a second collimator.
The end face of the blade of the data section is in front of the second collimator section.
On the bottom surface of the groove, the blade of the second collimator section
An end face is formed on the bottom surface of the groove of the first collimator portion.
And joined with the blade of the first collimator section.
The slit is formed between the second collimator and the blade.
An X-ray CT apparatus characterized by being formed . Provided 2. A X-ray generator, a collimator having a plurality of slits X-rays emitted from said X-ray generator to pass through, the X-ray detector for detecting X-rays passing through the slit A substrate provided with a semiconductor crystal including an electrode, wherein the X-ray detector includes an electrode and generates electrons and holes by X-ray incidence, and a wiring connected to the electrode; And wherein the wiring is located between the semiconductor crystal and the substrate,
The X-ray detectors are arranged one for each slit with one surface of the semiconductor crystal and the substrate facing the collimator side, and the semiconductor crystals of the X-ray detectors are located adjacent to each other. said has the substrate facing the X-ray detector, said collimator has a plurality of blades and projecting into one
First collimators each having a groove formed between the blades
A first collimator, and a second collimator.
The end face of the blade of the data section is in front of the second collimator section.
On the bottom surface of the groove, the blade of the second collimator section
An end face is formed on the bottom surface of the groove of the first collimator portion.
And joined with the blade of the first collimator section.
The slit is formed between the second collimator and the blade.
An X-ray CT apparatus characterized by being formed . 3. An X-ray generator, comprising: a collimator having a plurality of slits through which X-rays emitted from the X-ray generator pass; and an X-ray detector for detecting X-rays passing through the slit. A substrate provided with a semiconductor crystal including an electrode, wherein the X-ray detector includes an electrode and generates electrons and holes by X-ray incidence, and a wiring connected to the electrode; And wherein the wiring is located between the semiconductor crystal and the substrate,
The X-ray detectors are arranged one for each slit with one surface of the semiconductor crystal and the substrate facing the collimator side, and the semiconductor crystal of each X-ray detector has a shape elongated in one direction. The longitudinal direction of the semiconductor crystal is arranged in the direction of emission of X-rays from the slit, and the semiconductor crystal of each of the X-ray detectors is in contact with the substrate of another adjacent X-ray detector. Opposed to each other, the collimator has a plurality of blades protruding to one side and
First collimators each having a groove formed between the blades
A first collimator, and a second collimator.
The end face of the blade of the data section is in front of the second collimator section.
On the bottom surface of the groove, the blade of the second collimator section
An end face is formed on the bottom surface of the groove of the first collimator portion.
And joined with the blade of the first collimator section.
The slit is formed between the second collimator and the blade.
An X-ray CT apparatus characterized by being formed . 4. The X-ray CT apparatus according to claim 3, wherein a plurality of said electrodes are arranged in a longitudinal direction of said semiconductor crystal.