JP3308857B2 - Manufacturing method of LED chip - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an LED (light emitting diode) having a PN junction surface, and more particularly to a method for manufacturing an LED having a PN junction surface.
The present invention relates to a method for manufacturing an LED chip which is mounted horizontally so that an N-joint surface is perpendicular to a unit substrate.

[0002]

2. Description of the Related Art A dot matrix LED display device has been commercialized for a long time as a unit having a plurality of LED chips, and an LED chip is generally die-bonded so that a PN junction surface is horizontal to a unit substrate. And
Further, the LED display device is mounted by wire bonding. Recently, a horizontal LED display device has been developed to increase the mounting density.

FIG. 13 is a perspective view showing a conventional LED chip 1, FIG. 14 (a) is a cross-sectional view showing a good horizontal mounting example thereof, and FIG. 14 (b) is a defective mounting example thereof. FIG. As shown in FIG. 13, the LED chip 1 has a bonded P-type semiconductor layer 2 and N-type semiconductor layer 3 sandwiched between thin film electrodes 5 and 6 from both sides. As shown in FIG.
A bump 16 is provided between the wirings 12 and 13 for the P-type electrode and the N-type electrode. The LED chip 1 has a bump 16
The PN junction surface 4 is horizontally fixed so as to be perpendicular to the unit substrate 11, and the thin film electrodes 5, 6 and the wirings 12, 13 are electrically connected by solders 14, 15.

Note that a chip of the type such as the LED chip 1 is disclosed in, for example, Japanese Patent Application Laid-Open No.
No.-44591, JP-A-54-22186, and the like.

[0005]

The thin-film electrodes 5 and 6 are formed by vapor deposition and are very thin, and the P-type semiconductor layer 2 is also formed by epitaxial growth and is very thin. Several μm to several tens μm
It is about. Further, the P-type semiconductor layer 2 and the N-type semiconductor layer 3 are exposed on the side surfaces. For this reason, the thin film electrodes 5 and 6 are connected to the wiring 1 on the unit substrate 11 so as not to short-circuit both layers.
In order to electrically connect to each other, FIG.
As shown in (a), the electrodes 5 and 6 must be arranged at a sufficient distance from the wirings 12 and 13 with large solders 14 and 15 interposed therebetween. Still, FIG.
As shown in (b), the mounting accuracy of the LED chip 1 is poor, and a short circuit may occur.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a LE which can reliably prevent a short circuit at the time of mounting an LED chip and improve operation reliability.
An object of the present invention is to provide a method for manufacturing a D chip.

[0007]

According to the present invention, there are provided a first electrode layer and a second electrode layer, and a plurality of electrode layers sandwiched between the first electrode layer and the second electrode layer and having a PN junction surface parallel to the surface. After forming an LED wafer having a semiconductor crystal and an electrical insulating portion formed in a gap between the semiconductor crystals,
In the LED chip manufacturing method of manufacturing an LED chip in which a wafer is divided and a side surface of each semiconductor crystal is covered with an electrical insulating portion, each of the PN junction surfaces is closer to the first electrode layer than to the second electrode layer. By curing the resin applied from the surface far from the PN junction surface of the semiconductor crystal,
A method of manufacturing an LED chip, comprising forming an electrically insulating portion of the LED wafer.

According to the present invention, since the above-mentioned LED wafer is divided, a plurality of LED chips whose side surfaces are covered with an electrical insulating portion for each semiconductor crystal can be easily manufactured at once. Further, since the resin is applied from the surface side far from the PN junction surface, the side surface of the PN junction can be reliably covered even if the volume of the cured resin changes. Therefore, a short circuit can be prevented when the LED chip is mounted, and the reliability of operation can be improved. This is particularly effective when the PN junction surface is significantly closer to the first conductive layer than the second conductive layer.

The present invention also provides a method for forming a first electrode layer before forming the electrical insulating portion, and forming a second electrode layer after forming the electrical insulating portion.
It is characterized by forming an electrode layer.

According to the present invention, since the first electrode layer, the electric insulating portion, and the second electrode layer are formed in this order, the electric insulating portion formed by curing the applied resin is formed by the first electrode layer and the electric insulating portion. Shaped by semiconductor crystals. Therefore, a special process for forming a mold can be omitted, and the manufacturing process can be simplified.

The present invention also provides a first electrode layer and a second electrode layer, and a plurality of semiconductor crystals sandwiched between the first electrode layer and the second electrode layer and having a PN junction plane parallel to the surface.
After forming an LED wafer having an electric insulating portion formed in a gap between the semiconductor crystals, the LED wafer is divided, and an LED chip whose side is covered with the electric insulating portion for each semiconductor crystal is manufactured. In the method for manufacturing an LED chip, each of the PN junction surfaces is closer to the first electrode layer than the second electrode layer, and a predetermined region of a crystal wafer having a PN junction surface parallel to the surface is removed to form a plurality of semiconductor crystals. After forming
A method for manufacturing an LED chip, characterized in that an electric insulating portion is formed by filling a cured area with a resin and curing the resin.

According to the present invention, since the above-mentioned LED wafer is divided, a plurality of LED chips whose side surfaces are covered with an electrical insulating portion for each semiconductor crystal can be easily manufactured at once. Further, since the electrical insulating portion is formed as it is in the removal region of the crystal wafer, the dimensional accuracy of the electrical insulating portion is good, and the side surface of the semiconductor crystal is not exposed again due to the division of the LED wafer. Therefore, the side surface of the PN junction can be surely covered with the electrical insulating portion, and a short circuit can be prevented at the time of mounting the LED wafer, and the reliability of operation can be improved.

Further, according to the present invention, a first electrode layer is formed before the formation of the semiconductor crystal, and a second electrode layer is formed after the formation of the electrical insulating portion.
It is characterized by forming an electrode layer.

According to the present invention, since the first electrode layer, the semiconductor crystal, the electrical insulating portion, and the second electrode layer are formed in this order, a part of the crystal wafer is removed while the crystal wafer is fixed to the first electrode layer. Thus, the dimensional accuracy of the subsequently formed electrical insulating portion can be further improved.

Further, the present invention is characterized in that the above-mentioned region of the crystal wafer is shaved by a first blade having a predetermined thickness to form a semiconductor crystal, and the LED wafer is divided by a second blade thinner than the first blade. I do.

According to the present invention, by using the blades having different thicknesses, it is possible to simply and reliably secure an electrically insulating portion of a predetermined size on the LED chip. That is, after removing a part of the crystal wafer with the relatively thick first blade, applying and curing the resin in the removed area, the relatively thin second blade is used.
Since the LED wafer is divided by the blade, the electric insulating portion can be left without removing all the resin.

Further, according to the present invention, the first blade includes a first blade.
It is characterized in that even part of the electrode layer is scraped off.

According to the present invention, by removing a part of the crystal wafer with the first blade and also removing a part of the first electrode layer, the resin is also removed from the removed part of the first electrode layer. Because of the expansion, the side surface of the PN junction can be more reliably covered.

Further, the present invention is characterized in that the first electrode layer is bonded and fixed to a hard base after the formation of the first electrode layer and before the formation of the semiconductor crystal.

According to the present invention, since the first electrode layer to which the crystal wafer is fixed is fixed to a harder base, a part of the crystal wafer can be removed with the crystal wafer fixed more firmly. The dimensional accuracy of the formed electrically insulating portion can be further improved.

Further, according to the present invention, the first electrode layer is adhered and fixed to a base via an ultraviolet-curable double-sided pressure-sensitive adhesive sheet.
The double-sided pressure-sensitive adhesive sheet is irradiated with ultraviolet light before or after the D wafer is divided.

According to the present invention, the first electrode layer is bonded and fixed to the double-sided pressure-sensitive adhesive sheet only when necessary, such as when forming a semiconductor crystal or an electrical insulating portion, and the LED wafer is divided to eliminate the need for the pressure-sensitive adhesive. At this time, by irradiating ultraviolet rays to cure the double-sided pressure-sensitive adhesive sheet, the pressure-sensitive adhesive strength can be removed and the sheet can be easily peeled off. Thus, the adhesive strength of the double-sided adhesive sheet can be controlled as needed.

Further, the present invention is characterized in that the resin is applied using a squeegee.

According to the present invention, even if the coating surface has irregularities, the resin can be spread to every corner, and the inside can be made uniform and the surface can be finished smoothly. Therefore, when the resin is cured, the occurrence of cracks due to internal stress can be prevented, and the reliability of operation can be improved.

Further, the present invention is characterized in that the first electrode layer and the second electrode layer are formed by applying a conductive paste using a squeegee.

According to the present invention, even if there are irregularities on the application surface, the resin can be spread to all corners, and the inside can be made uniform and the surface can be finished smoothly. In particular, the second
If a squeegee is used when forming the electrode layer, the height of the LED chip, that is, from the first electrode layer to the second
The height including the electrode layer can be accurately matched with the plurality of LED chips. As a result, the display surface of a dot matrix display device or the like can be flattened, and display unevenness can be eliminated.

The present invention is characterized in that resin particles are previously formed on the surface to which the conductive paste is applied.

According to the present invention, it is possible to improve the adhesive strength to the surface to which the conductive paste is applied, and to eliminate the stress caused by the stress generated in the first electrode layer and the second electrode layer.

[0029]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 (a) shows an LE manufactured by a method for manufacturing an LED chip according to an embodiment of the present invention.
FIG. 1B is a perspective view showing the D chip 21, and FIG. 1B is a sectional view thereof. The LED chip 21 includes a semiconductor crystal 30 including a P-type semiconductor layer 22 and an N-type semiconductor layer 23, a P-side thin film contact layer 25, and an N-side thin film contact layer 26.
, A P-side thick film electrode 28, an N-side thick film electrode 29, and an electrical insulating section 27.

The P-type semiconductor layer 22 is formed of a semiconductor material having a thickness W1 and containing a P-type impurity, and the N-type semiconductor layer 23 is formed of a thickness W.
2 made of a semiconductor material containing an N-type impurity,
The bonding is performed at the bonding surface 24. On the P-type semiconductor layer 22 on the side facing the N-type semiconductor layer 23, a P-side thin film contact layer 25 made of Au is formed over the entire surface and made of Au.
On the N-type semiconductor layer 23 on the side facing the type semiconductor layer 22, an N-side thin film contact layer 26 made of Au and having a thickness of W4 is formed on a part thereof. Note that both contact layers 2
Reference numerals 5 and 26 correspond to the thin film electrodes 5 and 6 in FIG.

The electrical insulating portion 27 is made of a translucent resin having a thickness of W5, and is formed to cover the side surfaces of the P-type semiconductor layer 22, the N-type semiconductor layer 23 and the P-side thin film contact layer 25. A P-type thick film electrode 28 having a thickness of W6 is formed on the P-side thin film contact layer 25 and the electric insulating portion 27 adjacent thereto, and the N-side thin film contact layer 26 and the N-type semiconductor layer 23 are formed.
And a thickness W7 on the electrically insulating portion 27 adjacent thereto.
N-side thick film electrode 29 is formed.

The thickness of each part is, for example, W1 = several μm to several tens μm, W2 = 200 μm, W3 = W4 = 0.2 μm,
W5 = 25 μm, W6 = W7 = 50 μm, and the like.

As described above, the electrical insulating portion 27 protects the P-type semiconductor layer 22 and the N-type semiconductor layer 23, and has a structure capable of preventing short-circuit and breakage of both layers.

FIG. 2 is a perspective view showing a mounting structure of the LED chip 21 of FIG. The LED chip 21 is mounted horizontally on the unit substrate 31 so that the PN junction surface 24 is perpendicular to the unit substrate 31. That is, the wiring 32 on the unit substrate 31 and the P-side thick film electrode 28
The wiring 33 is bonded by a solder 34 interposed therebetween.
And the N-side thick film electrode 29 are bonded by the solder 35 interposed therebetween.

As described above, the relatively thin P-side thick film electrode 28 and the relatively thick N-side thick film electrode 29 are provided on the relatively thin P-side thin film contact layer 25 and N-side thin film contact layer 26, respectively.
Is connected, and when the chip is mounted horizontally, P
Since the side surfaces of the side thick film electrode 28 and the N side thick film electrode 29 are bonded to the wirings 33 and 34, the bonding area is large, the bonding is easy, and the bonding strength is improved.

(First Embodiment) FIGS. 3 to 6 are sectional views showing step by step a method of manufacturing an LED chip 21 according to a first embodiment of the present invention. First, in FIG. 3A, an N-type semiconductor is epitaxially grown on the surface of an N-type semiconductor substrate, and a P-type semiconductor layer 42 having a thickness W1 is epitaxially grown thereon. The N-type semiconductor substrate 43 and the N-type semiconductor epitaxially grown on its surface are combined to form an N-type semiconductor layer 43 having a thickness of W2. The epitaxial layer is much thinner for both P and N types than for an N type semiconductor substrate.

Next, a P-side thin film contact layer 45 is formed on the entire back surface of the P-type semiconductor layer 42, and a plurality of N-side thin film contact layers 2 patterned on the surface of the N-type semiconductor layer 43.
6 is formed. The pattern formation is performed so that the pitch of each N-side thin film contact layer 26 has a width W8. W8
Is, for example, 300 μm. Thereby, the thickness W
It is assumed that nine substrates 41 are formed. W9 is the sum of the above W1 to W4, but W1, W3,
W4 is significantly thinner than W2 when combined, and W9 is approximately W2
be equivalent to.

Next, in FIG. 3B, an extensible single-sided adhesive sheet 50 is attached to the back surface of the P-side thin film contact layer 45 of the substrate 41. Next, the substrate 41 is fully diced from the surface side of the substrate 41, that is, from the N-side thin film contact layer 26 side, using the blade 201 having a thickness of W10.
As shown in FIG. 3C, the substrate 41 is divided into chips 51 each having one N-side thin film contact layer 26 by full dicing.

By the full dicing at this time, the P-type semiconductor layer 42, the N-type semiconductor layer 43, and the P-side thin-film contact layer 45 become the P-type semiconductor layer 22, the N-type semiconductor layer 23, and the P-side thin-film contact layer 25, respectively. Be divided.
The width of the chip 51 is W12, and the interval between the chips 51 is W11. W11 is slightly larger than W10 due to the fluctuation of cutting. For example, W10 = 40
μm, W11 = 50 μm, and W12 = 250 μm.

Next, referring to FIG.
Is extended, the interval between the chips 51 is increased to W13, and the pitch between the chips 51 is increased to W14. For example, W13 = 100 μm and W14 = 350 μm. The stretching of the pressure-sensitive adhesive sheet 50 is performed by a chip spacing enlarging device described later with reference to FIG.

Next, in FIG. 4A, an electrically insulating and translucent resin is filled so as to fill the space between each chip 51 and cover each N-side thin film contact layer 26 and each N-type semiconductor layer 23. 52 is applied by a squeegee 53. Resin 52
Is, for example, UV-80D manufactured by Sumitomo Metal Mining Co., Ltd. As shown in FIG. 4B, the squeegee 53 is moved in parallel with the pre-filled resin 52 so that the height from the surface of the N-side thin film contact layer 26 becomes W15, for example, 20 μm. The resin 52 is spread flat and applied. Thus, it is assumed that the substrate 61 is formed. Next, in FIG. 4C, while the resin 52 applied to the substrate 61 is covered with the photomask 62, the resin 52
Is irradiated with ultraviolet light. However, the photomask 62
The light to the thin-film contact layer 26 and the N-type semiconductor layer 23 is blocked by the light-shielding portion 63, and the light between the chips 51 is transmitted.

When the surface of the substrate 61 is washed with an organic solvent such as acetone after the ultraviolet irradiation, only the portion of the resin 52 between the chips 51 becomes, as shown in FIG.
After being cured, the remaining resin 52 is washed away. The resin 52 between the chips 51 is compressed in the vertical direction by ultraviolet rays, so that the height from the surface of the N-side thin film contact layer 26 drops from W15 to 0, and the electrical insulating portion 4
It becomes 7. The formation of the electric insulating portion 47 allows the substrate 6
1 is assumed to be the substrate 64.

Next, in FIG. 5B, an N-side thick film electrode layer 73 is formed by applying an Ag paste 66 over the entire surface of the substrate 64 with a squeegee 65 and thermosetting. Ag paste 66 is, for example, CT2 manufactured by Toshiba Chemical Corporation.
25K. By forming the N-type thick film electrode layer 73, it is assumed that the substrate 64 becomes the substrate 71 as shown in FIG.

Next, in FIG. 6A, the substrate 71 is peeled off from the single-sided adhesive sheet 50, and the back surface of the substrate 71, that is, on the P-side thin film contact layer 25 and the electrical insulating portion 47, is removed.
The P-side thick film electrode layer 72 having a thickness W6 is formed in the same manner as the N-side thick film electrode layer 73. As a result, the substrate 71 is
D wafer 74 is assumed.

Next, referring to FIG. 6B, after the P-side thick film electrode layer 72 of the substrate 74 is again adhered to the single-sided adhesive sheet 50, the LED wafer 7 is again urged by the blade 201 having a thickness of W10.
4 is fully diced into a plurality of LED chips 21 having a width W16. W16 is W12 + 2 × W5,
For example, it is 300 μm. By this full dicing, the P-side thick-film electrode layer 72, the N-side thick-film electrode layer 73, and the electrical insulating portion 47 become the P-side thick-film electrode layer 28, respectively.
It is divided into an N-side thick film electrode layer 29 and an electric insulating portion 27.

FIG. 7A is a sectional view showing a chip interval enlarging device used for expanding the chip interval shown in FIG.
(B) is a sectional view showing an enlarged state. The chip interval enlarging device includes a cylinder 80 including a movable portion 81 and a fixed cylinder 82, and a locking member 83. An adhesive sheet 50 is stretched over the end of the fixed cylinder 82 and locked by a locking member 83. The movable section 81 is movable along the axis of the fixed cylinder 82. As shown in FIG. 7B, when the movable portion 81 pushes up the adhesive sheet 50, the adhesive sheet is stretched, and the interval between the chips 51 is increased.

As described above, according to the first manufacturing method, the thickness W
After the substrate 41 is cut by the blade 201, the single-sided adhesive sheet 50 is stretched to increase the distance between the chips 51, and the thickness W10
Since the LED wafer 74 is divided by the blade 201 of
The extended portion can be secured as the electrical insulating portion 27. In addition, since the resin 52 is applied from the N-type semiconductor layer 23 side with the P-type semiconductor layer 22 thinner than the N-type semiconductor layer 23 facing down, even if the resin 52 is excessively reduced by the irradiation of ultraviolet rays, the electric insulation is prevented. There is no possibility that the portion 47 cannot cover the P-type semiconductor layer 22 and the portion can be surely covered.

(Second Embodiment) FIGS. 8 to 12 are sectional views showing step by step a method of manufacturing an LED chip 21 according to a second embodiment of the present invention. First, in FIG.
An N-type semiconductor is epitaxially grown on the surface of the type semiconductor substrate, and a P-type semiconductor layer 142 having a thickness of W1 is epitaxially grown thereon. In addition, an N-type semiconductor substrate,
The N-type semiconductor layer 143 having a thickness W2 is formed by combining the N-type semiconductor epitaxially grown on the surface thereof.

Next, the thickness W is formed on the back surface of the P-type semiconductor layer 142.
3 P-side thin film contact layers 145 are formed, and a plurality of N-side thin film contact layers 26 having a thickness of W4 are formed on the surface of the N-type semiconductor layer 143. Each N-side thin-film contact layer 26 is patterned, and the pitch of each N-side thin-film contact layer 26 is W21, for example, 400 μm. Thus, it is assumed that the substrate 141 is formed.

Next, in FIG. 8B, a large number of resin particles 151, which are fine synthetic resin particles of about 0.1 μm, are formed over the entire surface of the substrate 141. In addition, resin particle 1
Numeral 51 is for improving the adhesive strength of the Ag paste described below to each surface of the substrate 141,
This is also to eliminate stress caused by stress. Next, FIG.
In (c), a P-side thick film electrode layer 155 having a thickness W6 is formed by applying an Ag paste to the back surface of the P-side thin film contact layer 145 and thermally curing the paste. Thus, the substrate 146 is formed.

Next, in FIG. 9A, the base is attached to one surface of the double-sided pressure-sensitive adhesive sheet 150, and the P-side thick film electrode layer 155 of the substrate 146 is attached to the other surface. The double-sided adhesive sheet 150 has, for example, an adhesive strength of 150 g / 25 mm.
Of the degree.

Next, in FIG. 9B, half dicing is performed with a first blade 202 having a thickness of W22 from between the N-side thin film contact layers 26 to a point in the middle of the P-side thick film electrode layer 155 to form a groove 158. Form. In the dicing by the first blade 202 having a thickness of W22, the width of the groove 158 becomes W23 wider than W22 due to blur. For example, W22 = 140 μm and W23 = 150 μm. At this time, the P-type semiconductor layer 14 is formed by half dicing.
2. N-type semiconductor layer 143 and P-side thin film contact layer 1
45 denotes a P-type semiconductor layer 22 and an N-type semiconductor layer 23, respectively.
And a P-type thin film contact layer 25.

Next, in FIG. 10A, the electrically insulating and translucent resin 1 is filled so as to fill the groove 158 and cover the N-side thin film contact layer 26 and the N-type semiconductor layer 23.
52 is applied with a squeegee 153. Resin 152
Is, for example, UV-80D manufactured by Sumitomo Metal Mining Co., Ltd. As shown in FIG. 10B, the squeegee 153 is moved in parallel with the resin 152 placed in advance so that the height from the surface of the N-side thin film contact layer 26 is W1.
Then, the resin 152 is spread flat so as to be 5 and is applied. Thus, it is assumed that the substrate 161 has been formed.

Next, in FIG. 10C, the resin 152 is irradiated with ultraviolet rays while the resin 152 applied to the substrate 161 is covered with the photomask 162. However, the photomask 162 blocks the light to the N-side thin-film contact layer 26 and the N-type semiconductor layer 23 by the light shielding portion 163 and transmits the light to the groove 158.

When the surface of the substrate 161 is washed with an organic solvent such as acetone after ultraviolet irradiation, as shown in FIG. 11A, only the portion of the resin 152 that covers the groove 158 is cured and the remaining portion is hardened. The other resin 152 is washed away. The resin 152 covering the groove 158 is vertically compressed by ultraviolet rays, so that the height from the surface of the N-side thin film contact layer 26 drops from W15 to 0,
It becomes the electrical insulation part 147. It is assumed that the substrate 161 has become the substrate 164 by the formation of the electric insulating portion 147.

Next, in FIG. 11B, the squeegee 16
5, the Ag paste 166 is applied to the entire surface of the substrate 164 and thermally cured to form the N-side thick film electrode layer 17 having a thickness W7.
Form 2 The Ag paste 166 is, for example, CT225K manufactured by Toshiba Chemical Corporation. By forming the N-type thick film electrode layer 172, the substrate 164 is used as the LED wafer 171 as shown in FIG.

Next, in FIG. 12A, the LED wafer 171 is fully diced for each LED chip 121 by the second blade 203 having a thickness W24 smaller than W22. The second blade 203 divides all of the electrical insulating portion 147 and the P-side thick film electrode layer 155 of the LED wafer 171, and the interval between the LED chips 121 is shifted by W2
W25 which is slightly wider than 4.

Next, in FIG. 12B, ultraviolet rays are irradiated from the side of the base 156 facing the LED wafer 171 to irradiate the double-sided adhesive sheet 150 with ultraviolet rays. The double-sided pressure-sensitive adhesive sheet 150 that has received the ultraviolet rays is hardened and easily peels off. Next, in FIG. 12C, after the base 156 is first peeled off from the adhesive sheet 150, all the LEDs
When the chip 121 is peeled off from the adhesive sheet 150, a plurality of LED chips 21 are formed.

According to the second manufacturing method as described above, the first
N, which is significantly thicker than P-type semiconductor layer 22, as in the manufacturing method
Since the resin 152 is applied from the mold semiconductor layer 23 side, LE
Inside the D chip 21, the electric insulating portion 27 can reliably cover the P-type semiconductor layer 22. In addition, since the resin 152 is directly filled in the groove 158 formed by removing a part of the crystal wafer to form the electric insulating portion 147,
The dimensional accuracy of the electrical insulating portion 147 is good, and the LED wafer 1
The side surface of the semiconductor crystal 30 is not exposed again due to the division of 71.

In the embodiment of the present invention, a structure and a manufacturing method in which the conductivity types P and N of each semiconductor layer are exchanged are also possible. In this case, the N-type semiconductor layer is much thinner than the P-type semiconductor layer, and the application and dicing of the resin are all performed from the P-type semiconductor layer side.

[0061]

As described above, according to the present invention, a plurality of LEDs whose side surfaces are covered with an electric insulating portion for each semiconductor crystal are provided.
Chips can be easily manufactured at once. In addition, by reliably covering the side surface of the semiconductor crystal, a short circuit can be prevented when mounting the LED chip, and the reliability of operation can be improved.

Further, according to the present invention, the electric insulating portion formed by curing the applied resin is molded by the first electrode layer and the semiconductor crystal, and a special process for taking the mold can be omitted. .

Further, according to the present invention, since the electrical insulating portion is formed as it is in the removal region of the crystal wafer, the dimensional accuracy of the electrical insulating portion is good, and the side surface of the semiconductor crystal is exposed again by cutting the LED wafer. Nothing.

According to the present invention, a part of the crystal wafer can be removed while being fixed to the first electrode layer.
The dimensional accuracy of the subsequently formed electrical insulating portion can be further improved.

Further, according to the present invention, by using the blades having different thicknesses, it is possible to simply and reliably secure an electrically insulating portion having a predetermined size on the LED chip.

Further, according to the present invention, since the resin also spreads to the shaved portion of the first electrode layer, the side surface of the PN junction can be more reliably covered.

Further, according to the present invention, the crystal wafer is more firmly fixed using the hard base, and a part of the crystal wafer is removed, so that the dimensional accuracy of the subsequently formed electrical insulating portion is further improved. be able to.

Further, according to the present invention, the adhesive strength of the double-sided adhesive sheet can be controlled as required.

Further, according to the present invention, by using a squeegee, even if the coating surface has irregularities, the resin can be spread to every corner, and the inside can be finished uniformly and the surface can be finished smoothly.

Further, according to the present invention, it is possible to improve the adhesive strength to the surface to which the conductive paste is applied, and to eliminate the stress caused by the stress generated in the first electrode layer and the second electrode layer.

[Brief description of the drawings]

FIG. 1A is an LED according to an embodiment of the present invention.
LED chip 21 prepared by a method for manufacturing a chip
FIG. 1B is a cross-sectional view of FIG.

FIG. 2 is a perspective view showing a mounting state of the LED chip 21 of FIG. 1;

FIG. 3 is an LED chip 21 according to the first embodiment of the present invention.
FIG. 5 is a cross-sectional view showing a stepwise manufacturing method.

FIG. 4 is an LED chip 21 according to the first embodiment of the present invention.
FIG. 5 is a cross-sectional view showing a stepwise manufacturing method.

FIG. 5 is an LED chip 21 according to the first embodiment of the present invention.
FIG. 5 is a cross-sectional view showing a stepwise manufacturing method.

FIG. 6 is an LED chip 21 according to the first embodiment of the present invention.
FIG. 5 is a cross-sectional view showing a stepwise manufacturing method.

FIG. 7 is a cross-sectional view showing a chip interval enlarging device used in FIG.

FIG. 8 shows an LED chip 21 according to a second embodiment of the present invention.
FIG. 5 is a cross-sectional view showing a stepwise manufacturing method.

FIG. 9 shows an LED chip 21 according to a second embodiment of the present invention.
FIG. 5 is a cross-sectional view showing a stepwise manufacturing method.

FIG. 10 is an LED chip 2 according to a second embodiment of the present invention.
FIG. 4 is a cross-sectional view showing stepwise the manufacturing method of No. 1;

FIG. 11 is an LED chip 2 according to a second embodiment of the present invention.
FIG. 4 is a cross-sectional view showing stepwise the manufacturing method of No. 1;

FIG. 12 is an LED chip 2 according to a second embodiment of the present invention.
FIG. 4 is a cross-sectional view showing stepwise the manufacturing method of No. 1;

FIG. 13 is a perspective view showing a conventional LED chip 1.

FIG. 14A is a cross-sectional view showing a good example of mounting the LED chip 1, and FIG. 14B is a cross-sectional view showing a bad example of mounting.

[Explanation of symbols]

 Reference Signs List 21 LED chip 24 PN junction surface 27, 47 Electrical insulating part 30 Semiconductor crystal 52, 152 Resin 53, 153, 165 Squeegee 72, 155 P-side thick film electrode layer 73, 172 N-side thick film electrode layer 74, 171 LED wafer 150 Double-sided adhesive sheet 156 base

Claims (11)

(57) [Claims] A first electrode layer and a second electrode layer;
An LED having a plurality of semiconductor crystals sandwiched between an electrode layer and a second electrode layer and having a PN junction plane parallel to the surface, and an electrical insulating portion formed in a gap between the semiconductor crystals.
In the method for manufacturing an LED chip, in which after the wafer is formed, the LED wafer is divided and the side surface of each of the semiconductor crystals is covered with an electrical insulating portion, each of the PN junction surfaces is formed by a second electrode layer. A method of manufacturing an LED chip, comprising: forming an electric insulating portion of the LED wafer by curing a resin applied from a surface side near the first electrode layer and far from the PN junction surface of the semiconductor crystal. 2. The LED chip according to claim 1, wherein a first electrode layer is formed before the formation of the electric insulating portion, and a second electrode layer is formed after the formation of the electric insulating portion. Method. 3. A first electrode layer and a second electrode layer;
An LED having a plurality of semiconductor crystals sandwiched between an electrode layer and a second electrode layer and having a PN junction plane parallel to the surface, and an electrical insulating portion formed in a gap between the semiconductor crystals.
In the method for manufacturing an LED chip, in which after the wafer is formed, the LED wafer is divided and the side surface of each of the semiconductor crystals is covered with an electrical insulating portion, each of the PN junction surfaces is formed by a second electrode layer. Also, a plurality of semiconductor crystals are formed by removing a predetermined region of a crystal wafer having a PN junction plane parallel to the surface, which is close to the first electrode layer, and then filling the removed region with a resin and curing the semiconductor crystal. A method for manufacturing an LED chip, comprising forming an electrical insulating portion. 4. The method for manufacturing an LED chip according to claim 3, wherein a first electrode layer is formed before forming the semiconductor crystal, and a second electrode layer is formed after forming an electrical insulating portion. . 5. The semiconductor device according to claim 1, wherein said semiconductor wafer is formed by shaving said region of said crystal wafer with a first blade having a predetermined thickness, and dividing said LED wafer with a second blade thinner than said first blade. 5. The method for manufacturing an LED chip according to item 4. 6. The LE according to claim 5, wherein the first blade also cuts off a part of the first electrode layer.
D chip manufacturing method. 7. The method for manufacturing an LED chip according to claim 4, wherein the first electrode layer is bonded and fixed to a hard base after forming the first electrode layer and before forming the semiconductor crystal. 8. The method according to claim 1, wherein the first electrode layer is adhered and fixed to a base via an ultraviolet-curable double-sided pressure-sensitive adhesive sheet, and the double-sided pressure-sensitive adhesive sheet is irradiated with ultraviolet light before or after the LED wafer is divided. 8. The method for manufacturing an LED chip according to item 7. 9. The method according to claim 1, wherein the resin is applied using a squeegee. 10. The L according to claim 1, wherein the first electrode layer and the second electrode layer are formed by applying a conductive paste using a squeegee.
Manufacturing method of ED chip. 11. A surface on which the conductive paste is applied,
The method for manufacturing an LED chip according to claim 10, wherein resin particles are formed in advance.